JP2012516564A - Batch type substrate processing equipment - Google Patents

Abstract

A batch type substrate processing apparatus capable of processing a plurality of substrates at the same time, and supplying and discharging a gas for composing an atmosphere during the substrate processing. However, the present invention provides a substrate processing apparatus that is disposed inside the chamber so as to face each other and can uniformly supply the substrate processing gas to the substrate carried into the chamber.
A batch type substrate processing apparatus capable of simultaneously processing a plurality of substrates according to the present invention includes a chamber for providing a substrate processing space for the plurality of substrates and a plurality of substrates. A boat 30 to be supported, a plurality of heaters 70 arranged at regular intervals along the stacking direction of the substrates 10, and a gas pipe base 300 arranged in the chamber 20. A gas supply pipe is provided on the gas pipe base. 100 and the gas exhaust pipe 200 are connected.
[Selection] Figure 1

Description

  The present invention relates to a batch-type substrate processing apparatus, and more specifically, a gas supply pipe and a gas exhaust pipe that can simultaneously process a plurality of substrates and supply and discharge atmospheric composition gas during substrate processing, respectively. The present invention relates to a batch-type substrate processing apparatus in which the substrate processing gas is arranged in the chamber so as to face each other and the substrate processing gas can be uniformly supplied to the substrate carried into the chamber.

  In recent years, in addition to the rapid increase in demand for flat panel displays, the tendency to favor large screen displays has become increasingly strong, which has increased interest in large area substrate processing equipment for flat panel display manufacturing.

  Large-area substrate processing apparatuses used when manufacturing a flat panel display can be broadly classified into vapor deposition apparatuses and heat treatment (or annealing) apparatuses. A vapor deposition apparatus is an apparatus used in the process of forming a transparent conductive layer, an insulating layer, a metal layer, or a silicon layer which is a component of a flat panel display. The heat treatment apparatus is an apparatus for heat treatment in order to crystallize or change the phase of the layer constituting the flat panel display.

  As a typical heat treatment apparatus, there is a silicon crystallization apparatus that crystallizes amorphous silicon deposited on a glass substrate into polysilicon when manufacturing a thin film transistor for a liquid crystal display. Recently, this silicon crystallization apparatus is often used for forming a polysilicon layer corresponding to a light absorption layer when manufacturing a thin film solar cell.

  In general, the substrate processing apparatus includes a single wafer type capable of performing heat treatment on one substrate and a batch type capable of simultaneously performing processing on a plurality of substrates. Recently, a batch type capable of simultaneously heat-treating a plurality of substrates has been spotlighted.

  On the other hand, recently, from the viewpoint of increasing the area and productivity of flat panel displays and solar cells, the batch type substrate processing apparatus has become large enough to accommodate a plurality of large area substrates (for example, glass substrates or quartz substrates). Has been made.

  Accompanying the increase in the area of such a batch type substrate processing apparatus, it is very important to smoothly and uniformly supply the source gas or the atmospheric gas necessary for substrate processing into the substrate processing apparatus. That is, only when the source gas or the atmospheric gas is supplied smoothly and uniformly into the batch type substrate processing apparatus, the characteristics of the substrate processing film over the plurality of large area substrates can be maintained uniformly.

  Accordingly, there is an urgent need to develop a batch-type substrate processing apparatus that can perform uniform substrate processing over the entire area of a large-area substrate.

  The present invention has been made in order to solve the above-described problems of the prior art, and the object thereof is to carry into the chamber by uniformly supplying a gas necessary for substrate processing into the chamber. To provide a batch type substrate processing apparatus that enables uniform substrate processing for all substrates.

  In order to achieve the above object, the present invention provides a batch type substrate processing apparatus capable of processing a plurality of substrates simultaneously, a chamber for providing a substrate processing space for the plurality of substrates, and a plurality of substrates. A boat for mounting and supporting a substrate, a plurality of heaters arranged at regular intervals along the substrate stacking direction, and a gas pipe base arranged on one side in the chamber, the gas pipe base including a gas supply pipe and Provided is a substrate processing apparatus having a gas exhaust pipe connected thereto.

  The present invention is also a batch type substrate processing apparatus capable of simultaneously processing a plurality of substrates, a chamber for providing a substrate processing space for the plurality of substrates, a boat for mounting and supporting the plurality of substrates, A plurality of heaters arranged at regular intervals along the substrate stacking direction, and gas pipe bases arranged on both sides of the chamber, and a gas supply pipe or a gas exhaust pipe is connected to each gas pipe base. Provided is a substrate processing apparatus.

  When a plurality of gas supply pipes and gas exhaust pipes are connected to the gas pipe base, the gas supply pipes and gas exhaust pipes may be connected alternately.

  A plurality of gas supply holes and gas exhaust holes may be formed in the gas supply pipe and the gas exhaust pipe, respectively.

  The gas supply hole and the gas exhaust hole may be formed to face the inside of the chamber and correspond to the substrate mounted on the boat.

  The gas pipe base includes a main body in which a space is formed, a gas port connected to the main body, and a connection hole formed in the main body and connected to at least one of a gas supply pipe or a gas exhaust pipe. be able to.

  The gas port may be either a gas supply port corresponding to the gas supply pipe or a gas exhaust port corresponding to the gas exhaust pipe.

  A gas diffusion plate can be further provided inside the main body of the gas pipe base.

  A plurality of diffusion holes can be formed in the gas diffusion plate.

  The gas supply pipe includes a plurality of gas injection pipes having a plurality of injection holes formed on a surface thereof, and the plurality of gas injection pipes may be arranged in parallel to the substrate.

  The plurality of gas injection pipes may include a first gas injection pipe, a second gas injection pipe, and a third gas injection pipe.

  The substrate processing gas supplied to the gas supply pipe can be jetted first from the gas jet pipe arranged at the top of the plurality of gas jet pipes.

  Of the plurality of gas injection pipes, the diameter of the plurality of injection holes in any gas injection pipe can be gradually increased along the direction of travel of the substrate processing gas in the gas supply pipe.

  Among the plurality of gas injection pipes, the diameters of the plurality of injection holes in the arbitrary gas injection pipe are the same as each other in the arbitrary gas injection pipe, but the gas injection pipe disposed above the arbitrary gas injection pipe It can be made larger than the diameter of the injection hole.

  According to the present invention, by uniformly supplying a gas necessary for substrate processing into the chamber, there is an effect that uniform substrate processing is performed on all the substrates carried into the chamber.

  In addition, according to the present invention, it is possible to improve the productivity of a flat panel display and a solar cell by enabling uniform substrate processing on a plurality of substrates as a whole.

The perspective view which shows the structure of a batch type substrate processing apparatus. The perspective view which shows the arrangement | positioning state of the board | substrate of a batch type heat processing apparatus, the main heater unit, and an auxiliary heater unit. The perspective view which shows the structure of the boat of a batch type heat processing apparatus. AA sectional drawing of FIG. The state where the gas supply pipe and the gas exhaust pipe are arranged in the chamber is shown. The perspective view which shows the state in which the gas supply pipe and the gas exhaust pipe were connected with the gas pipe base. The state which the gas diffusion plate was provided in the inside of a gas pipe base is shown. The perspective view which shows the state by which the gas supply pipe | tube is arrange | positioned in the chamber. FIG. 9 is a cross-sectional perspective view showing a state where the gas supply pipe of FIG. 8 is connected to a gas pipe base. The state where the gas supplied via the gas supply port diffuses inside the main body is shown. The state which the gas supplied through the gas supply port diffuses through the gas diffusion plate provided in the inside of the main body is shown. The front view which shows the structure of the gas supply pipe | tube of a batch type substrate processing apparatus. The perspective view which shows the structure of the gas supply pipe | tube of a batch type substrate processing apparatus. The use condition of the gas supply pipe of a batch type substrate processing apparatus is shown. The use condition of the gas supply pipe of a batch type substrate processing apparatus is shown. The use condition of the gas supply pipe of a batch type substrate processing apparatus is shown. The use condition of the gas supply pipe of a batch type substrate processing apparatus is shown.

  Hereinafter, the configuration of the present invention will be described in detail with reference to the accompanying drawings.

  A batch type substrate processing apparatus according to the present invention includes a chamber in which a substrate processing space is provided, a boat for mounting and supporting the substrate, a heater for heating the substrate, and an atmosphere for adjusting the substrate processing step. A gas supply pipe and a gas exhaust pipe for supplying and exhausting the atmospheric gas may be provided. A general configuration of such a batch type substrate processing apparatus and a substrate processing process using the same are well-known techniques in this field, and thus detailed description thereof will be omitted.

  FIG. 1 is a perspective view showing a configuration of a batch type substrate processing apparatus 1.

  First, the material of the substrate 10 carried into the batch type substrate processing apparatus 1 is not particularly limited, and substrates 10 of various materials such as glass, plastic, polymer, silicon wafer, and stainless steel can be carried in. The following description will be made assuming a rectangular glass substrate that is most commonly used in the field of flat panel displays such as LCDs and OLEDs and thin film silicon solar cells.

The batch type substrate processing apparatus 1 includes a rectangular parallelepiped chamber 20 that provides a substrate processing space for the substrate 10 and a frame (not shown) that supports the chamber 20. The material of the chamber 20 is preferably stainless steel, but is not necessarily limited thereto.
A first opening 22 is formed on one side of the chamber 20. The substrate 10 can be loaded and unloaded through the first opening 22 using a substrate loading device (not shown) such as a transfer arm. For example, a door (not shown) that can be opened and closed in the vertical direction can be provided in the first opening 22.

  A second opening 24 can be formed in the upper portion of the chamber 20. Through the second opening 24, maintenance and replacement of components provided in the chamber 20, such as a boat, a gas supply pipe, and a gas exhaust pipe, are performed. The second opening 24 can be provided with a cover (not shown) that can be opened and closed.

  Inside the chamber 20, a plurality of tubular heaters 70 for directly heating the substrate 10 can be installed at regular intervals for each of the plurality of substrates 10. At this time, the plurality of heaters 70 can be inserted and fixed through the plurality of holes 26 formed along the outer wall of the chamber 20. The configuration of the heater 70 will be described later.

  FIG. 2 is a perspective view showing an arrangement state of the substrate 10, the main heater unit 40, and the auxiliary heater unit 50 of the batch heat treatment apparatus 1.

  Referring to FIG. 2, the main heater unit 40 includes a plurality of main heaters 70 arranged in parallel with the short sides of the substrate 10 at regular intervals. The main heater 70 is a standard long rod-shaped heater in which a heating element is inserted inside a quartz tube, and electric power is supplied from the outside through terminals provided at both ends thereof. It is an individual component constituting the main heater unit 40 that generates heat. In this embodiment, the main heater unit 40 is composed of 14 main heaters 70, but the number of main heaters 70 constituting the main heater unit 40 depends on the size of the substrate 10 carried into the chamber 20. Various changes can be made.

  A plurality of main heater units 40 are arranged at regular intervals along the stacking direction of the substrates 10. The substrate 10 is disposed between the plurality of main heater units 40. In the present embodiment, a configuration in which three substrates 10 are arranged between four main heater units 40 is shown, but the number of main heater units 40 is the number of substrates 10 carried into the chamber 20. Various changes can be made depending on the number of sheets.

  The substrate 10 is preferably disposed in the center between the main heater units 40. Further, it is preferable that the substrate 10 and the main heater unit 40 be separated to such an extent that they do not interfere with the behavior of a transfer arm (not shown) of the substrate transfer apparatus when the substrate 10 is carried into the chamber 20. .

  As described above, in the batch heat treatment apparatus 1, the main heater units 40 including the 14 main heaters 70 that can cover the entire area of the substrate 10 are respectively provided above and below the substrate 10. Therefore, the substrate 10 can be heated by the 28 main heaters 70 so that the temperature in the substrate surface becomes uniform, and can be uniformly heat-treated.

  The auxiliary heater unit 50 includes a first auxiliary heater unit 50 a that is arranged in parallel along the short side direction of the substrate 10, and a second auxiliary heater unit 50 b that is arranged along the long side direction of the substrate 10.

  The first auxiliary heater unit 50 a includes a plurality of first auxiliary heaters 52 a arranged in parallel to the main heater 70 on both sides of the main heater unit 40. In the present embodiment, the first auxiliary heater unit 50a is configured by eight first auxiliary heaters 52a, one on each side of the four main heater units 40. The number of first auxiliary heaters 52 a to be configured can be variously changed according to the number of main heater units 40 provided in the chamber 20.

  The second auxiliary heater unit 50 b is composed of a plurality of second auxiliary heaters 52 b arranged perpendicular to the main heater 70 on both sides of the main heater unit 40. In the present embodiment, the second auxiliary heater unit 50b is a total of ten second auxiliary heaters 52b arranged so as to be positioned one above and below each main heater unit 40 on both sides of the four main heater units 40. Although configured, the number of second auxiliary heaters 52 b constituting the second auxiliary heater unit 50 b can be variously changed according to the number of main heater units 40 provided in the chamber 20. The main heater unit 40 is preferably located at the center between the plurality of second auxiliary heater units 50b.

  As the first auxiliary heater 52a and the second auxiliary heater 52b, it is preferable to use a heater having a standard long bar shape like the main heater 70 as described above.

  As described above, the batch type heat treatment apparatus 1 includes the first auxiliary heater unit 50a including the eight first auxiliary heaters 52a and the ten second auxiliary heaters on the four side portions of the main heater unit 40. Since the second auxiliary heater unit 50b composed of the heater 52b is provided, the four side portions of the main heater unit 40 receive heat from the 18 auxiliary heaters 52a and 52b. It is possible to prevent heat loss in the chamber 20 that inevitably occurs when the four side portions are in contact with the external environment.

  FIG. 3 is a perspective view showing the configuration of the boat 30 of the batch heat treatment apparatus 1.

  As shown in FIG. 3, a plurality of boats 30 are provided inside the chamber 20 for supporting the substrate 10 carried into the chamber. The boat 30 is preferably provided so as to support the long side of the substrate 10. In the present embodiment, three boats 30 are provided in total, three on each of the two long sides of the substrate 10, but more boats are provided in order to stably support the substrate 10. It can also be changed according to the size of the substrate 10. The material of the boat 30 is preferably quartz.

  In addition, referring to FIG. 3, the substrate 10 is preferably mounted on the boat 30 while being placed on the holder 12. When the heat treatment temperature reaches the softening temperature of the glass substrate during the heat treatment process, a phenomenon occurs in which the substrate is bent downward due to its own weight. Such a bending phenomenon becomes a more serious problem especially due to the increase in the area of the substrate. In order to solve such a problem, the substrate processing is performed with the substrate 10 mounted on the holder 12.

  4 is a cross-sectional perspective view taken along line AA of FIG.

  As shown in FIG. 4, a gas pipe base 300 connected to a plurality of gas supply pipes 100 and a plurality of gas exhaust pipes 200 is installed on one side of the chamber 20. In FIG. 4, for the convenience of explanation, the illustration of the configuration other than the gas supply pipe 100, the gas exhaust pipe 200, and the gas pipe base 300 is omitted. The same applies to the drawings described later.

  The gas supply pipe 100 supplies an atmosphere composition gas in the substrate processing to the inside of the chamber 20 when processing the substrate 10 is performed. The gas exhaust pipe 200 discharges the exhaust gas after being used for substrate processing to the outside of the chamber 20.

  Although there are no particular limitations on the cross-sectional shapes of the gas supply pipe 100 and the gas exhaust pipe 200, it is preferable to make them circular for convenience of manufacturing. In order to facilitate the exhaust of the gas diffused inside the chamber 20, the diameter of the gas exhaust pipe 200 is preferably larger than the diameter of the gas supply pipe 100. The material of the gas supply pipe 100 and the gas exhaust pipe 200 can include quartz.

  On the other hand, alternately arranging the gas supply pipes 100 and the gas exhaust pipes 200 on the gas pipe base 300 is suitable for facilitating the diffusion of the gas in the chamber 20 and the exhaust process of the gas from the chamber 20. is there.

  The gas pipe base 300 supports the gas supply pipe 100 and the gas exhaust pipe 200, while the gas supply pipe 100 and the gas exhaust pipe 200 are provided outside the chamber 20. (Not shown) are connected to each other.

  FIG. 5 shows a state where the gas supply pipe 100 and the gas exhaust pipe 200 are arranged in the chamber 20.

  As shown in FIG. 5, according to the first embodiment of the present invention, gas pipe bases 300 are installed on both sides in the chamber 20, and each gas pipe base 300 includes a gas supply pipe 100 and a gas exhaust pipe. 200 are connected.

  Referring to FIG. 5, two gas pipe bases 300 are arranged on each side in the chamber 20 and four on both sides. The number of the gas pipe bases 300 depends on the size of the chamber 20, the gas pipe bases. Various modifications can be made by comprehensively considering the ease of installation of 300 and the like. If necessary, two gas pipe bases 300 may be arranged, one on each side in the chamber 20 and on both sides.

  A gas supply pipe 100 and a gas exhaust pipe 200 are alternately connected to the gas pipe base 300. The states of the gas supply pipes 100 and the gas exhaust pipes 200 that are alternately arranged in this way are also applied to the arrangement state of the gas supply pipes 100 and the gas exhaust pipes 200 that are connected to the gas pipe bases 300 facing each other. It is preferable to do. That is, as shown in FIG. 5, an arbitrary gas supply pipe 100 faces the gas exhaust pipe 200 with a substrate (not shown) interposed therebetween, and an arbitrary gas exhaust pipe 200 holds a substrate (not shown) with a gas interposed therebetween. The arrangement of the gas supply pipe 100 and the gas exhaust pipe 200 can be set so as to face the supply pipe 200.

  Referring to FIG. 5, three gas supply pipes 100 and two gas exhaust pipes 200 are connected to the gas pipe base 300 disposed on one side in the chamber 20, and the other in the chamber 20. Two gas supply pipes 100 and three gas exhaust pipes 200 are connected to the gas pipe base 300 arranged on the gas side, but the gas supply pipes 100 and gas connected to each gas pipe base 300 are connected. The number of the exhaust pipes 200 can be variously changed in consideration of the size of the chamber 20 and the ease of installation of the gas supply pipe 100 and the gas exhaust pipe 200. However, it is preferable that the total number of the gas supply pipes 100 and the gas exhaust pipes 200 installed in the chamber 20 be the same so that the gas diffusion and exhaust processes are smooth.

  4 and 5, the gas supply pipe 100 is formed with a plurality of gas supply holes 110 through which gas flows out, and the gas exhaust pipe 200 has a plurality of gas exhaust holes 210 through which gas flows. Is formed. The gas supply hole 110 and the gas exhaust hole 210 are formed along the longitudinal direction of the gas supply pipe 100 and the gas exhaust pipe 200, respectively, and may be formed in the inner side of the chamber 20, that is, toward the substrate 10. preferable. The number of the gas supply holes 110 and the gas exhaust holes 210 is preferably the same as the number of substrates carried into the chamber 20, but can be variously changed in consideration of the smooth supply and exhaust of the gas. can do.

  FIG. 6 is a perspective view showing a state in which the gas supply pipe 100 and the gas exhaust pipe 200 are connected to the gas pipe base 300.

  Referring to FIG. 6, the gas pipe base 300 may include a main body 310, a connection hole 320, and a gas port 330.

  The main body 310 is formed in a predetermined size, and a space is formed inside, and can be used as a diffusion space for gas supplied from the outside. Although the main body 310 is formed in a rectangular parallelepiped in FIG. 6, it is not necessarily limited to this.

  The partition 312 can divide the inside of the main body 310 into a plurality of parts. At this time, the partition 312 is formed between a connection hole 320 described later, a gas supply port 330a, and a gas exhaust port 330b, and a gas supplied through the gas supply port 330a corresponds to a gas supply pipe corresponding thereto. The gas flowing into the gas exhaust pipe 200 can be exhausted to the corresponding gas exhaust port 330b. In FIG. 6, the interior of the main body 310 is divided into five by four partition walls 312, but the number of partition walls 312 can be increased or decreased according to the number of gas supply pipes 100 and gas exhaust pipes 200. By forming the partition wall 312, an effect of enhancing the durability of the main body 310, and by extension, the gas pipe base 300 can be obtained incidentally.

  A plurality of connection holes 320 are formed in the upper part of the main body 310, and at least one of the gas supply pipe 100 and the gas exhaust pipe 200 is connected to each connection hole 320. In order to facilitate the connection of the gas supply pipe 100 or the gas exhaust pipe 200, the diameters of the connection holes 320 may be different from each other. In order to strengthen the connection of the gas supply pipe 100 or the gas exhaust pipe 200 connected to the connection hole 320, a flange 322 may be additionally connected to the connection hole 320.

  The gas port 330 may include a gas supply port 330a through which gas is supplied from the outside and a gas exhaust port 330b through which exhaust gas is exhausted to the outside.

  At least one gas supply port 330 a may be connected to the lower portion of the main body 310. The gas supply port 330 a allows gas supplied from the outside to flow into the gas pipe base 300.

  At least one gas exhaust port 330b may be connected to the lower portion of the gas pipe base 300. The gas exhaust port 330 b exhausts the exhaust gas flowing in via the gas exhaust pipe 200 to the outside of the chamber 20.

  Meanwhile, a gas diffusion plate 340 may be further provided inside the main body 310. FIG. 7 shows a state in which a gas diffusion plate 340 is provided inside the gas pipe base 300.

  Referring to FIG. 7, the gas diffusion plate 340 is formed in a plate shape and is provided horizontally inside the main body 310. A plurality of diffusion holes 342 are formed at regular intervals throughout the gas diffusion plate 340. The diameter of the diffusion hole 342 is preferably formed sufficiently smaller than the diameter of the gas supply port 330a. The gas supplied from the outside diffuses through the diffusion holes 342 formed over the entire region of the gas diffusion plate 340.

  On the other hand, considering the process of exhausting gas from the chamber 20, it is preferable not to provide the gas diffusion plate 340 between the gas exhaust port 330 b and the gas exhaust pipe 200.

  On the other hand, the arrangement of the gas supply pipe 100 and the gas exhaust pipe 200 can be changed as shown in FIGS. FIG. 8 is a perspective view showing a state in which the gas supply pipe 100 is disposed in the chamber 20. FIG. 9 is a cross-sectional perspective view showing a state where the gas supply pipe 100 of FIG. 8 is connected to the gas pipe base 300.

  According to another embodiment of the present invention as shown in FIGS. 8 and 9, the gas pipe base 300 is arranged on both sides in the chamber 20, and the gas pipe base arranged on one side in the chamber 20. A gas supply pipe 100 is connected to 300, and a gas exhaust pipe 200 is connected to the gas pipe base 300 disposed on the other side in the chamber 20. For reference, FIGS. 8 and 9 show only the gas pipe base 300 to which the gas supply pipe 100 on one side in the chamber 20 is connected for convenience of explanation.

  The batch type substrate processing apparatus 1 according to the first embodiment of the present invention configured as described above can operate as follows.

  First, after the substrate 10 is mounted on the boat 30 provided in the chamber 20, the heater 70 is operated to perform a substrate processing process on the substrate 10.

  At this time, before the heater 70 is operated, an atmospheric gas such as nitrogen or argon is supplied through the gas supply port 330a in order to compose the substrate processing atmosphere inside the chamber 20. The gas supplied to the gas supply port 330 a is supplied into the chamber 20 through the gas supply pipe 100 and the gas supply hole 110.

  FIG. 10 shows a state in which the gas supplied through the gas supply port 330 a diffuses into the main body 310.

  As shown in FIG. 10, the gas supplied from the outside via the gas supply port 330 a is uniformly diffused into the main body 310 and supplied into the chamber 20 through the gas supply pipe 100.

  FIG. 11 shows a state in which the gas supplied through the gas supply port 330 a diffuses through the gas diffusion plate 340 installed inside the main body 310.

  As shown in FIG. 11, the gas supplied from the outside through the gas supply port 330 a is uniformly diffused into the internal space of the main body 310 (the space below the gas diffusion plate 340), and the gas diffusion plate 340 After passing through the diffusion hole 342 and moving into the internal space of the main body 310 (the space above the gas diffusion plate 340), it diffuses again into the space above the gas diffusion plate 340 and passes through the gas supply pipe 100. To be supplied into the chamber 20.

  Finally, after the substrate processing is performed in a gas atmosphere, the exhaust gas flows into the gas exhaust pipe 200 and the gas exhaust hole 210 arranged alternately or opposite to the gas supply pipe 100, and passes through the gas exhaust port 330b. To the outside of the chamber 20.

  As described above, in the present invention, the substrate processing gas is sufficiently diffused in the internal space of the main body 310 of the gas pipe base 300 (in some cases, by providing the gas diffusion plate 340 inside the main body 310). After being sufficiently diffused in the two created spaces), the gas is supplied to the inside of the chamber 20 through the gas supply pipe 100, so that the substrate processing gas can be supplied uniformly into the chamber 20. There is an advantage that uniform substrate processing can be performed for all the substrates 10 carried into the substrate 20.

  In the present invention, the substrate processing gas is supplied and exhausted in a state where the gas supply pipes 100 and the gas exhaust pipes 200 are arranged alternately and / or opposed to each other, and the pressure of the substrate processing gas is increased during the substrate processing process. Is maintained uniformly over the entire chamber 20, there is an advantage that uniform substrate processing can be performed on all the substrates 10 carried into the chamber 20.

  FIG. 12 is a front view showing the configuration of the gas supply pipe 400 of the batch type substrate processing apparatus 1. FIG. 13 is a perspective view showing the configuration of the gas supply pipe 400 of the batch type substrate processing apparatus 1.

  12 and 13, the gas supply pipe 400 includes a unit supply pipe 410, a first injection pipe 420a, a second injection pipe 420b, a third injection pipe 420c, a first injection hole 430a, a second injection hole 430b, The third injection hole 430c, the first connection pipe 440a, and the second connection pipe 440b may be provided.

  A substrate processing gas is supplied from the outside through the unit supply pipe 410. The unit supply pipe 410 is formed to have a predetermined length, and is installed vertically inside the chamber. One end of the unit supply pipe 410 is connected to an external gas supply device (not shown). The unit supply pipe 410 is formed so that one end is opened so that the substrate processing gas can be supplied, and a first injection pipe 420a (described later) is orthogonally connected to the other end.

  The substrate processing gas supplied through the unit supply pipe 410 is supplied to the plurality of loaded substrates 10 from the first injection pipe 420a, the second injection pipe 420b, and the third injection pipe 420c. The first injection pipe 420a, the second injection pipe 420b, and the third injection pipe 420c are arranged in this order from the top to the bottom in the chamber. The first injection pipe 420a, the second injection pipe 420b, and the third injection pipe 420c are arranged so as to be parallel to the long side direction of the substrate 10. In the present embodiment, the gas supply pipe 400 is configured to include three injection pipes 420a, 420b, and 420c, but the number of injection pipes can be variously changed.

  The first injection pipe 420a is connected to the end of the unit supply pipe 410, and the second injection pipe 420b and the third injection pipe 420c are first through the first connection pipe 440a and the second connection pipe 440b, respectively. It is continuously connected so as to communicate with the injection pipe 420a. Specifically, one end of the first injection pipe 420a is connected to one end of the unit supply pipe 410, and the other end of the first injection pipe 420a is one end of the second injection pipe 420b via the first connection pipe 440a. The other end of the second injection pipe 420b is connected to one end of the third injection pipe 420c via the second connection pipe 440b. At this time, by connecting the first injection pipe 420a, the second injection pipe 420b and the third injection pipe 420c, the first connection pipe 440a and the second connection pipe 440b orthogonally to each other, as shown in the figure. The overall shape may be “5”.

  On the other hand, considering the gas flow in the gas supply pipe 400, it is preferable that both ends of the first injection pipe 420a and the second injection pipe 420b are open. Regarding the third injection pipe 420c, it is preferable that one end connected to the second connection pipe 440b is opened and the other end is closed. At this time, as shown in FIG. 12, one end of the third injection pipe 420 c can be closed using the cover 460. The cover 460 can also be used when closing one end of the first connecting pipe 440a.

  A plurality of first injection holes 430a, second injection holes 430b, and third injection holes 430c directed to the substrate 100 are formed on the respective surfaces of the first injection pipe 420a, the second injection pipe 420b, and the third injection pipe 420c. can do. At this time, the first injection hole 430a, the second injection hole 430b, and the third injection hole 430c may be formed in a straight line in the longitudinal direction of the injection tubes 420a, 420b, and 420c.

  Meanwhile, the diameters of the first injection hole 430a, the second injection hole 430b, and the third injection hole 430c can be gradually increased along the gas traveling direction. More specifically, in the first injection pipe 420a, the diameter of the first injection hole 430a formed on the connection part side with the unit supply pipe 410 is formed on the connection part side with the first connection pipe 440a. The diameter of the first injection hole 430a can be increased. Similarly to this, the diameters of the second injection hole 430b and the third injection hole 430c can be gradually increased along the gas traveling direction.

  Or the diameter of the 1st injection hole 430a, the 2nd injection hole 430b, and the 3rd injection hole 430c can be increased in steps along the advancing direction of gas. Specifically, the diameters of the plurality of injection holes 430a in the same injection pipe 420a are the same, and the same applies to the injection holes 430b in the injection pipe 420b and the injection holes 430c in the injection pipe 420c. The diameter of the second injection hole 430b of 420b is formed larger than the first injection hole 430a of the first injection pipe 420a, and the diameter of the third injection hole 430c of the third injection pipe 420c is the second injection hole 420b of the second injection pipe 420b. It can be made larger than the two injection holes 430b.

  As described above, in the gas supply pipe 400, the diameter of the injection holes 430a, 430b, and 430c is gradually or stepwise increased in the gas flow direction because the gas supplied through the unit supply pipe 410 is supplied to the unit supply pipe 410. This is to prevent the gas pressure from decreasing from 410 and the amount of gas injected from the injection hole from decreasing.

  On the other hand, the gas supply pipe 400 is preferably supported by installing a support base 450. The support platform 450 may be installed in parallel to the unit supply pipe 410 and connected to the first connection pipe 440a. More specifically, the upper end of the support base 450 is in contact with the first connection pipe 440a that connects the first injection pipe 420a and the second injection pipe 420b, and the lower end of the support base 450 is in contact with the gas pipe base 300. Installed. In addition, in order to ensure the structural stability of the gas supply pipe 400, one end of the third injection pipe 420 c can be in contact with one side of the support base 450.

  Below, the usage example of the gas supply pipe | tube 400 comprised as mentioned above is demonstrated with reference to FIGS.

First use case

  FIG. 14 shows a usage state of the gas supply pipe 400 of the batch type substrate processing apparatus 1.

  As shown in FIG. 14, three gas supply pipes 400 can be installed inside the chamber 20 on the long side of the substrate 10. This is a case where a plurality of gas supply pipes 400 are arranged so as to correspond to the size of the substrate 10 after reducing the size of the entire gas supply pipe 400. In this usage example, three gas supply pipes 400 are shown, but the number of the gas supply pipes 400 can be variously changed depending on the sizes of the substrate 10 and the gas supply pipes 400.

  The gas supplied from the outside of the chamber 20 to the gas supply pipe 400 flows into the unit supply pipe 410, flows into the first injection pipe 420a connected to the unit supply pipe 410, and the first injection pipe 420a has a first gas. It is supplied to the substrate 10 through the injection hole 430a. The gas that has not been injected from the first injection pipe 420a flows into the second injection pipe 420b through the first connection pipe 440a, and passes through the second injection holes 430b formed in the second injection pipe 420b to the substrate 10. Supplied. The gas that has not been injected from the second injection pipe 420b flows into the third injection pipe 420c through the second connection pipe 440b and passes through the third injection hole 430c formed in the third injection pipe 420c to the substrate 10. Supplied.

  At this time, as described above, the diameters of the first injection hole 430a, the second injection hole 430b, and the third injection hole 430c gradually or stepwise increase in the gas supply pipe 400 along the gas traveling direction. May be. Thus, by uniformly supplying the substrate processing gas into the chamber 20, uniform substrate processing can be performed for all the substrates 10 carried into the chamber 20.

Second use case

  FIG. 15 shows a usage state of the gas supply pipe 400 a of the batch type substrate processing apparatus 1.

  As shown in FIG. 15, one gas supply pipe 400 a can be installed inside the chamber 20 on the long side of the substrate 10. This is a case where only one gas supply pipe 400 is arranged after the size of the entire gas supply pipe 400 can be adapted to the size of the substrate 10. That is, in this usage example, the lengths of the first injection pipe 420a, the second injection pipe 420b, and the third injection pipe 420c of the gas supply pipe 400a are substantially the same as the length of the long side of the substrate 10. obtain. Since the configuration of the other gas supply pipe 400a is the same as that of the gas supply pipe 400 of the first usage example, detailed description thereof is omitted.

Third use case

  FIG. 16 shows a usage state of the gas supply pipe 400 of the batch type substrate processing apparatus 1. According to this usage example, the gas supply pipe 400 shown in the first usage example can be connected to the gas pipe base 300 described above. Since the configuration of the gas pipe base 300 and the connection method between the gas supply pipe 400 and the gas pipe base 300 are the same as those described above, detailed description thereof is omitted.

Fourth use example

  FIG. 17 shows a usage state of the gas supply pipe 400 a of the batch type substrate processing apparatus 1. According to this usage example, the gas supply pipe 400a of the second usage example may be connected to the gas pipe base 300 described above. Since the configuration of the gas pipe base 300 and the connection method between the gas supply pipe 400 and the gas pipe base 300 are the same as those described above, detailed description thereof is omitted.

  Although the present invention has been described with reference to the preferred embodiments as described above, the present invention is not limited to the above-described embodiments, and various modifications and changes can be made by those skilled in the art without departing from the spirit of the present invention. It is. Such variations and modifications are within the scope of the claims appended hereto.

DESCRIPTION OF SYMBOLS 1 Batch type substrate processing apparatus 10 Substrate 12 Substrate holder 20 Chamber 22 1st opening 24 2nd opening 30 Boat 70 Heater (each heater which comprises a main heater unit)
DESCRIPTION OF SYMBOLS 100 Gas supply pipe 110 Gas supply hole 200 Gas exhaust pipe 210 Gas exhaust hole 300 Gas pipe base 310 Main body 312 Partition wall 320 Connection hole 322 Flange 330 Gas port 330a Gas supply port 330b Gas exhaust port 340 Gas diffusion plate 342 Diffusion hole 400, 400a Gas supply pipe 410 Supply pipe 420a, 420b, 420c 1st injection pipe, 2nd injection pipe, 3rd injection pipe 430a, 430b, 430c 1st injection hole, 2nd injection hole, 3rd injection hole 440a, 440b 1st connection Tube, second connecting tube 450 support stand 460 cover

Claims (14)

A batch type substrate processing apparatus capable of simultaneously processing a plurality of substrates,
A chamber for providing a substrate processing space for the plurality of substrates;
A boat for mounting and supporting the plurality of substrates;
A plurality of heaters arranged at regular intervals along the stacking direction of the substrates;
A batch type substrate processing apparatus comprising: a gas pipe base disposed on one side of the chamber, wherein a gas supply pipe and a gas exhaust pipe are connected to the gas pipe base. A batch type substrate processing apparatus capable of simultaneously processing a plurality of substrates,
A chamber for providing a substrate processing space for the plurality of substrates;
A boat for mounting and supporting the plurality of substrates;
A plurality of heaters arranged at regular intervals along the stacking direction of the substrates;
A batch type substrate processing apparatus comprising: a gas pipe base disposed on each side of the chamber; and a gas supply pipe or a gas exhaust pipe connected to each gas pipe base.   The batch type substrate processing according to claim 1, wherein when a plurality of gas supply pipes and gas exhaust pipes are connected to the gas pipe base, the gas supply pipes and the gas exhaust pipes are alternately connected. apparatus.   The batch type substrate processing according to claim 1, wherein a plurality of gas supply holes and gas exhaust holes are respectively formed in the gas supply pipe and the gas exhaust pipe. apparatus.   The batch type substrate processing according to claim 4, wherein the gas supply hole and the gas exhaust hole are formed so as to face the inside of the chamber and correspond to the substrate mounted on the boat. apparatus. The gas pipe base is
A body with a space inside,
A gas port coupled to the body;
The batch according to claim 1, further comprising a connection hole formed in the main body and connected to at least one of the gas supply pipe or the gas exhaust pipe. Type substrate processing apparatus.   The batch type substrate processing apparatus according to claim 6, wherein the gas port is one of a gas supply port corresponding to the gas supply pipe and a gas exhaust port corresponding to the gas exhaust pipe.   The batch type substrate processing apparatus according to claim 6, wherein a gas diffusion plate is further provided inside the main body of the gas pipe base.   The batch type substrate processing apparatus according to claim 8, wherein a plurality of diffusion holes are formed in the gas diffusion plate. The gas supply pipe includes a plurality of gas injection pipes having a plurality of injection holes formed on the surface,
3. The batch type substrate processing apparatus according to claim 1, wherein each of the plurality of gas injection tubes is arranged in parallel to the substrate.   The batch type substrate processing apparatus according to claim 10, wherein the plurality of gas injection pipes include a first gas injection pipe, a second gas injection pipe, and a third gas injection pipe.   The substrate processing gas supplied to the gas supply pipe is jetted first from the gas jet pipe arranged at the top of the plurality of gas jet pipes. The batch type substrate processing apparatus according to 1.   The diameter of the plurality of injection holes in an arbitrary gas injection pipe among the plurality of gas injection pipes is configured to gradually increase along the traveling direction of the substrate processing gas in the gas supply pipe. 10. The batch type substrate processing apparatus according to 10.   The diameter of the plurality of injection holes in an arbitrary gas injection pipe among the plurality of gas injection pipes is the same in the arbitrary gas injection pipe, but the gas disposed above the arbitrary gas injection pipe The batch type substrate processing apparatus according to claim 10, wherein the diameter is larger than the diameter of the injection hole of the injection pipe.

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