201036090 六、發明說明： 【發明所屬之技彳衧領城】 發明領域 本發明係有關於一種批式基板處理裝置。更詳而言 之，其係有關於一種可將複數個基板同時進行基板處理， 且用以進行基板處理時之環境氣體組成氣體之供給及排出 的氣體供給管及氣體排氣管於腔室之内部相對配置，而可 對裝載在腔室内之基板均一地供給基板處理氣體之批式基 〇 板處理裝置。 - 發明背景 ' 近年來，除了平板顯示器之需要急增外，喜好大畫面 顯示器之傾向漸漸地增加，故對平板顯示器製造用之大面 積基板處理裝置之關注提高。 用於平板顯示器製造時之大面積基板處理裝置大致區 〇 分為級裝4及減理(或退火)裝置。Μ裝置仙以形成 構成平板顯示器之透明導電層、絕緣層、金屬層或矽層之 裝置。熱處理裝置係為使構成前述平板顯示器之層結晶 化、相變化而進行熱處理之裝置。 代表性之熱處理裝置有液晶顯示器用薄膜電晶體製造 時，將洛鑛於玻璃基板上之非晶石夕結晶化成聚石夕之石夕於晶 化裝置。最近，此矽結晶化裝置亦多用於薄膜型太陽 池製造時，形成相當於光吸收層之聚矽層。 通常’基板處理裝置有可對1片基板進行熱處理之片葉 201036090 式及對複數個基板同時進行基板處理之批式。最近，則以 可將複數個基板同時進行熱處理之批式受到注目。 另—方面，最近，從平板顯示器及太陽電池之大面積 化及生產性提高之面而言，批式基板處理裝置已大面積化 至可收容複數個大面積基板（例如玻螭基板或石英基板）之 程度。 、土 如此，隨著批式基板處理裝置之大面積化，將基板處 理時必要之來源氣體或環境氣體順暢且均一地供給至基板 處理裝置内非常重要，，僅於來源氣體或環境聽_ 且均-地供給至批式基板處理裝置叫，可㈣蓋複數個 大面積基板全體之基板處理膜之特性維持均一。 因而，可涵蓋大面積基板之全面積，進行均_基板處 理之批式基板處理之開發為當務之急。 【明内3 發明概要 發明欲解決之課題 是故’本發明係為解決上述f知技術之問題而發明 者，其目的係提供藉將基板處理時所需之氣體均—地供仏 至腔室内’可對裝載於腔室内之所有基板進行均_之基^ 處理的批式基板處理裝置。 用以解決課題之手段 為達成上述目的，本發明之基板處理裝置係可將複數 個基板同時進行基板處理之批式基板處理裝置，其特徵在 於’該批式基板處理裝置包含有：對前述複數個基板提供 201036090 基板處理空間之腔室；裝載前述複數個基板，並予以支撐 之載具；沿著前述基板之層積方向隔著一定間隔而配置之 複數個加熱器；及，設置於前述腔室内之一側，並連結有 氣體供給管及氣體排氣管之氣體管基座。 以及，一種可將複數個基板同時進行基板處理之批式 基板處理裝置，其特徵在於，該批式基板處理裝置包含有： 對前述複數個基板提供基板處理空間之腔室；裝載前述複 數個基板，並予以支撐之載具；沿著前述基板之層積方向 隔著一定間隔而配置之複數個加熱器；及設置於前述腔室 内之兩側，並連結氣體供給管或氣體排氣管之氣體管基座。 於前述氣體管基座連結複數個氣體供給管及氣體排氣 管時，前述氣體供給管及前述氣體排氣管可交互連結。 於前述氣體供給管及前述氣體排氣管可分別形成複數 個氣體供給孔及氣體排氣孔。 前述氣體供給孔及前述氣體排氣孔可形成為：朝向前 述腔室之内側，並對應於已裝載在前述載具之前述基板。 前述氣體管基座可具有於内部形成空間之本體；連結 於前述本體之氣體口；及，形成於前述本體，且連結前述 氣體供給管及氣體排氣管中之至少1者的連結孔。 前述氣體口可為對應於前述氣體供給管之氣體供給口 及對應於前述氣體排氣管之氣體排氣口中之任一者。 前述氣體管基座可更具有設於前述本體内部之氣體擴 散板。 可於前述氣體擴散板形成複數個擴散孔。 5 201036090 前述氣體供給管可具有已於表面形成有複數個喷射孔 之複數個氣體喷射管，且前述複數個氣體噴射管配置成與 前述基板平行。 前述氣體喷射管可由第1氣體喷射管、第2氣體噴射管 及第3氣體噴射管構成。 已供給至前述氣體供給管之基板處理氣體可最先從前 述複數個氣體喷射管中最上側之氣體喷射管喷射。 前述複數個氣體喷射管中之前述任意氣體噴射管之前 述喷射孔的直徑可在前述氣體供給管内沿著基板處理氣體 之行進方向逐漸地增加。 前述複數個氣體噴射管中之前述任意氣體喷射管之前 述喷射孔的直徑可相同，而前述任意氣體噴射管之前述喷 射孔之直徑則可大於配置於比前述任意氣體喷射管上側之 前述氣體喷射管之前述喷射孔的直徑。 發明效果 根據本發明，藉均一地供給基板處理時所需之氣體， 而有可對裝載於腔室内之所有基板進行均一之基板處理之 效果。 又，根據本發明，藉可對複數個基板進行全體均一之 基板處理，而有平板顯示器及太陽能電池之生產性提高之 效果。 圖式簡單說明 第1圖係顯示批式基板處理裝置之結構之立體圖。 第2圖係顯示批式熱處理裝置之基板、主加熱器單元及 201036090 輔助加熱器單元之配置狀態的立體圖。 第3圖係顯示批式熱處理裝置之載具之結構的立體圖。 第4圖係第1圖之A-A截面圖。 第5圖係顯示於腔室内配置氣體供給管及氣體排氣管 之狀態的圖。 第6圖係顯示氣體供給管及氣體排氣管連結於氣體管 基座之狀態之立體圖。 第7圖係顯示於氣體管基座之内部設有氣體擴散板之 狀態的圖。 第8圖係顯示於腔室内配置有氣體供給管之狀態之立 體圖。 第9圖係顯示第8圖之氣體供給管連結於氣體管基座之 狀態的截面立體圖。 第10圖係顯示藉由氣體供給口供給之氣體擴散於本體 内部之狀態的圖。 第11圖係顯示藉由氣體供給口供給之氣體藉由設於本 體内部之氣體擴散板擴散之狀態的圖。 第12圖係顯示批式基板處理裝置之氣體供給管之結構 的正面圖。 第13圖係顯示批式基板處理裝置之氣體供給管之結構 的立體圖。 第14圖係顯示批式基板處理裝置之氣體供給管之使用 狀態的圖。 第15圖係顯示批式基板處理裝置之氣體供給管之使用 7 201036090 狀態的圖。 第16圖係1員不批式基板處理裝置之氣體供給管之使用 狀態的圖。 苐17圖係|員示抵# 衣式基板處理裝置之氣體供給管之使用 狀態的圖。 【實施冷式3 用以實施發明之形態 、 〜、附加圖式’詳細說明本發明之結構。 本又&式基板處理裝置可包含有㈣部提供基板 處理工間之腔至、支撐所裝叙基板之載具、用以將基板 加’、’、之力’、、、器用以進邱以調節基板處理步驟之環境之 孔體的d及排氣之氣體供給管及㈣排氣管而構 成。此種批式基板處理裝置之_般結構及使用其之基板處 理步驟為在此領域廣為人知之眾所周知技術故關於此之 詳細說明省略。 第1圖係顯示批式基板處理裝L之結構之立體圖。 首先，裝載於批式基板處理裝£1之基板1〇之材質未特 別限制，可裝載玻璃、塑膠、聚合物、石夕晶圓、不鏽鋼等 多種材I之基板10。以下，假設在諸如1^：1)或〇1^1)之平板 顯不器及薄膜财太陽能電池之領域巾最常使用之矩形破 璃基板來說明。 批式基板處理裝置1包含有提供對基板10之基板處理 空間之長方體形狀的腔室20、支撐腔室20之框架（圖中未示） 而構成。腔室20之材質以不鏽鋼為佳，但未必限於此。 201036090 於腔室20之一側形成第1開口 22。在第1開口 22中，可 使用諸如移送臂（transfer arm)之基板裝載裝置（圖中未 示），裝載及卸載基板10。可於第1開口 22設可於上下方向 開關之門（圖中未示）。 可於腔室20之上部形成第2開口 24。在第2開口 24中， 進行設於腔室20内部之諸如載具、氣體供給管及氣體排氣 管等之修理及替換。可於第2開口 24設可開關之蓋（圖中未 示）。201036090 VI. Description of the Invention: [Technology of the Invention] Field of the Invention The present invention relates to a batch substrate processing apparatus. More specifically, the present invention relates to a gas supply pipe and a gas exhaust pipe for supplying and discharging an ambient gas constituent gas for performing substrate processing on a plurality of substrates simultaneously. The internal relative arrangement allows batch-based substrate processing equipment to uniformly supply substrate processing gas to the substrate loaded in the chamber. - BACKGROUND OF THE INVENTION In recent years, in addition to the rapid increase in demand for flat panel displays, the tendency to favor large-screen displays has gradually increased, and attention has been paid to large-area substrate processing apparatuses for flat panel display manufacturing. The large-area substrate processing apparatus used in the manufacture of flat panel displays is roughly divided into a stage 4 and a reduction (or annealing) apparatus. The device is formed to form a transparent conductive layer, an insulating layer, a metal layer or a germanium layer of the flat panel display. The heat treatment apparatus is a device which heats the layer constituting the flat panel display by crystallization and phase change. When a representative heat treatment apparatus is manufactured by a thin film transistor for a liquid crystal display, the amorphous ore of the ore on the glass substrate is crystallized into a crystallization apparatus. Recently, this ruthenium crystallization apparatus is also often used in the production of a thin film solar cell to form a polysilicon layer corresponding to a light absorbing layer. In general, the substrate processing apparatus has a blade type that can heat-treat one substrate, and a batch type in which a plurality of substrates are simultaneously subjected to substrate processing. Recently, a batch type in which a plurality of substrates can be simultaneously heat-treated has been attracting attention. On the other hand, recently, from the large-area and productivity improvement of flat panel displays and solar cells, the batch substrate processing apparatus has been extensively large enough to accommodate a plurality of large-area substrates (for example, a glass substrate or a quartz substrate). The extent of it. With the large area of the batch substrate processing apparatus, it is very important to smoothly and uniformly supply the source gas or the ambient gas necessary for the substrate processing to the substrate processing apparatus, and only the source gas or the environment is heard. The mean-ground supply to the batch substrate processing device is called (4), and the characteristics of the substrate processing film covering a plurality of large-area substrates are maintained uniform. Therefore, it is a matter of urgency to cover the entire area of a large-area substrate and to perform batch-substrate processing for uniform substrate processing. [Ming Nai 3 SUMMARY OF THE INVENTION The object of the invention is to solve the problem of the above-mentioned technology, and the object of the invention is to provide a gas supply to the chamber by means of the substrate. A batch substrate processing apparatus capable of performing a uniform processing on all substrates loaded in a chamber. Means for Solving the Problem In order to achieve the above object, a substrate processing apparatus of the present invention is a batch substrate processing apparatus capable of simultaneously performing substrate processing on a plurality of substrates, wherein the batch substrate processing apparatus includes: a substrate for providing a 201036090 substrate processing space; a carrier for loading the plurality of substrates and supporting the plurality of heaters; and a plurality of heaters disposed at intervals along a stacking direction of the substrate; and being disposed in the cavity One side of the room is connected to the gas pipe base of the gas supply pipe and the gas exhaust pipe. And a batch substrate processing apparatus capable of simultaneously performing substrate processing on a plurality of substrates, wherein the batch substrate processing apparatus includes: a chamber for providing a substrate processing space to the plurality of substrates; and loading the plurality of substrates And supporting the carrier; a plurality of heaters disposed along the stacking direction of the substrate at regular intervals; and gas disposed on both sides of the chamber and connected to the gas supply pipe or the gas exhaust pipe Tube base. When the plurality of gas supply pipes and the gas exhaust pipe are connected to the gas pipe base, the gas supply pipe and the gas exhaust pipe may be alternately connected. A plurality of gas supply holes and gas exhaust holes may be formed in the gas supply pipe and the gas exhaust pipe, respectively. The gas supply hole and the gas exhaust hole may be formed to face the inside of the chamber and correspond to the substrate loaded on the carrier. The gas pipe base may have a body that forms a space therein, a gas port that is coupled to the body, and a coupling hole that is formed in the body and that connects at least one of the gas supply pipe and the gas exhaust pipe. The gas port may be any one of a gas supply port corresponding to the gas supply pipe and a gas exhaust port corresponding to the gas exhaust pipe. The gas pipe base may further have a gas diffusion plate provided inside the body. A plurality of diffusion holes may be formed in the gas diffusion plate. 5 201036090 The gas supply pipe may have a plurality of gas injection pipes having a plurality of injection holes formed on the surface, and the plurality of gas injection pipes are disposed in parallel with the substrate. The gas injection pipe may be composed of a first gas injection pipe, a second gas injection pipe, and a third gas injection pipe. The substrate processing gas supplied to the gas supply pipe can be first ejected from the uppermost gas injection pipe among the plurality of gas injection pipes. The diameter of the aforementioned injection hole of any of the plurality of gas injection pipes may be gradually increased in the gas supply pipe along the traveling direction of the substrate processing gas. The diameter of the injection holes of any of the plurality of gas injection pipes may be the same, and the diameter of the injection holes of any of the gas injection pipes may be larger than the gas injection disposed on the upper side of any of the gas injection pipes. The diameter of the aforementioned injection hole of the tube. Advantageous Effects of Invention According to the present invention, it is possible to uniformly supply a substrate required for processing of a substrate, and to perform uniform substrate processing for all substrates mounted in the chamber. Further, according to the present invention, it is possible to perform overall uniform substrate processing on a plurality of substrates, and to improve the productivity of a flat panel display and a solar cell. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the structure of a batch substrate processing apparatus. Fig. 2 is a perspective view showing the arrangement state of the substrate of the batch type heat treatment apparatus, the main heater unit, and the 201036090 auxiliary heater unit. Figure 3 is a perspective view showing the structure of the carrier of the batch heat treatment apparatus. Figure 4 is a cross-sectional view taken along line A-A of Figure 1. Fig. 5 is a view showing a state in which a gas supply pipe and a gas exhaust pipe are disposed in a chamber. Fig. 6 is a perspective view showing a state in which a gas supply pipe and a gas exhaust pipe are coupled to a gas pipe base. Fig. 7 is a view showing a state in which a gas diffusion plate is provided inside the base of the gas pipe. Fig. 8 is a perspective view showing a state in which a gas supply pipe is disposed in a chamber. Fig. 9 is a cross-sectional perspective view showing a state in which the gas supply pipe of Fig. 8 is coupled to the base of the gas pipe. Fig. 10 is a view showing a state in which a gas supplied from a gas supply port is diffused inside the body. Fig. 11 is a view showing a state in which a gas supplied from a gas supply port is diffused by a gas diffusion plate provided inside the body. Fig. 12 is a front elevational view showing the structure of a gas supply pipe of the batch substrate processing apparatus. Fig. 13 is a perspective view showing the structure of a gas supply pipe of the batch substrate processing apparatus. Fig. 14 is a view showing the state of use of the gas supply pipe of the batch substrate processing apparatus. Fig. 15 is a view showing the state of the gas supply pipe of the batch substrate processing apparatus. Fig. 16 is a view showing the state of use of the gas supply pipe of the one-stage batch type substrate processing apparatus.苐17图系|员示应# A diagram showing the state of use of the gas supply pipe of the clothes substrate processing apparatus. [Formation of the cold type 3 for carrying out the invention, and the additional drawings] The structure of the present invention will be described in detail. The present & substrate processing apparatus may include (4) a chamber for providing a substrate processing chamber, a carrier for supporting the mounted substrate, a device for adding ', ', a force', and a device for entering the Qiu It is configured by adjusting the d and the exhaust gas supply pipe and the (4) exhaust pipe of the hole body in the environment of the substrate processing step. The general structure of such a batch substrate processing apparatus and the substrate processing steps using the same are well-known techniques well known in the art, and thus a detailed description thereof will be omitted. Fig. 1 is a perspective view showing the structure of a batch substrate processing apparatus L. First, the material of the substrate 1 loaded on the batch substrate processing package is not particularly limited, and the substrate 10 of various materials I such as glass, plastic, polymer, Shihwa wafer, and stainless steel can be loaded. Hereinafter, it is assumed that a rectangular glass substrate which is most commonly used in a flat panel display such as 1^:1) or 〇1^1) and a thin film solar cell is described. The batch substrate processing apparatus 1 includes a chamber 20 that provides a rectangular parallelepiped shape for the substrate processing space of the substrate 10, and a frame (not shown) that supports the chamber 20. The material of the chamber 20 is preferably stainless steel, but is not necessarily limited thereto. 201036090 A first opening 22 is formed on one side of the chamber 20. In the first opening 22, the substrate 10 can be loaded and unloaded using a substrate loading device (not shown) such as a transfer arm. A door (not shown) that can be opened and closed in the vertical direction can be provided in the first opening 22. A second opening 24 may be formed in the upper portion of the chamber 20. In the second opening 24, repairs and replacements such as a carrier, a gas supply pipe, and a gas exhaust pipe provided inside the chamber 20 are performed. A switchable cover (not shown) may be provided in the second opening 24.
在腔室20之内部，對複數個基板1〇，用以直接將基板 10加熱之管狀複數個加熱器70可以一定間隔設置。此時， 加熱器70可藉由沿著腔室2〇之外壁形成之複數個孔％插入 及固定。關於加熱器7〇之結構後述。 第2圖係顯示批式熱處理裝置1之基板1〇、主加熱器單 元40及輔助加熱器單元50之配置狀態之立體圖。 參照第2圖，主加熱器單元40具有與基板1〇之短邊方向 平行地隔著疋間隔而配置之複數個單位主加熱器7〇。單 位主加熱器70通常為長棒狀之加熱器，於石英管之内部插 入有發熱體，係構成藉由設於兩端之端子，接收外部之電 源而使熱產生之主加熱器單㈣的單位體。在本實施形態 中’主加熱器單以〇以14個單位主加熱器7〇構成，構成主 加熱器早⑽之單位主加熱㈣之數可依裝載於腔㈣之 基板10之大小進行多種變更。 主加熱器 配置複數個。 單元40沿著基板10之層積方向隔著一定間隔 基板1〇配置於複數個主加—單元_。在 9 201036090 本實施形怨中，3片基板10以配置於4個主加熱器單元40間 者構成，主加熱器單元4〇之數可依裝載於腔室20之基板10 之數進行多種變更。 基板10宜配置於主加熱器單元40間之中央。又，基板 10與主加熱n單元糊宜隔開於將基板職載於腔室2〇時， 不致妨礙基板移送U之料臂（圖巾未示)之活動的程度。 如此，藉於批式熱處理裝置1設置以可於基板10之上部 及下部覆蓋基板1G全面狀丨4個單元主加熱㈣構成的主 加熱器單tl4G ’基板1G可涵蓋全面積，從28個單位主加熱 器70均一地接收熱，而可進行均一之基板處理。 辅助加熱器單元5G具有沿著基板10之短邊方向平行地 配置之第1輔助加熱器單元5〇a、沿著基板⑴之長邊方向配 置之第2輔助加熱器單元50b。 第1輔助加熱器單元5〇a具有於主加熱器單元4〇之兩側 與早兀主加熱㈣平行地配置之複數個第丨單位輔助加敎 器似。在本實施形態中，第1輔助加熱ϋ單元配置於 4個主加熱器單元4G兩側之共計8個第i單位輔助加熱器❿ 構成’構成第1輔助加熱器單元50a之第】單位輔助加埶器 52a之數可依設置於腔請之主加熱器單元仙之數進行多 種變更。 第2輔助加熱H單機具有於主加熱器單元4〇之兩側 與單位主加埶器70垂直地g己署7 & —〇垂直地配置之複數個第2單位輔助加熱 ㈣。在本實施形射，第2輔助加熱器單⑽以配置於 4個主加熱器單元4〇兩側之上部及下部之共計咖第2單位 10 201036090 輔助加熱器52b構成，而構成第2輔助加熱器單元篇之第2 早位輔助加熱器52b之數可依設置於腔室2〇之主加執器單 捕)之數崎錄變更。主加_單元4q魏置於^輔助 加熱器單元50b間之中央。 第1單位輔助加熱器52a及第2單位輔助加熱器52b宜使 用與前述單位主加熱器70相同之—般長棒狀加熱器。 如此，藉在批式熱處理裝置卜於主加熱器單元4〇之4 個外周部設置以8個第丨單位輔助加熱器仏構成之幻輔助 加熱器單元50a及以U)個第2單位輔助加熱器似構成之第2 輔助加熱器單元5Gb，主加熱料元4G之4個外周部從_ 單位輔助加熱器52a、52b接收熱，主加熱器單元仙之斗個外 周部與外部環境接觸，藉此，可防止無法避免地產生之腔 室20内之熱損失。 第3圖係顯示批式熱處理裝置丨之載具3〇之結構的立體圖。 參照第3圖，於腔室20之内部設置有用以支撐裝載於腔 室之基板10之複數載具30。載具30宜以支撐基板1〇之長邊 側之狀態設置。在本實施形態中，載具3〇於基板1〇之兩長 邊側各設置3個、共計6個，而為將基板1〇穩定地支撐，亦 可以3個以上之數设置，可根據基板1〇之大小，進行多種變 更。載具30之材質以石英為佳。 又，參照第3圖，基板10宜以載置於架上之狀態裝載 於載具30。在基板處理過程中，當基板處理溫度到達玻璃 基板之軟化(softening)溫度時’因基板自身之重量，產生基 板撓曲之現象，特別是此種撓曲現象隨著基板之大面積 11 201036090 化，而形成更大之問題。為解決此問題’在將基板10載置 於架12之狀態下，進行基板處理。 第4圖係第1圖之A-A截面立體圖。 如第4圖所示，於腔室20内之一側設置有連結有複數個 氣體供給管100及複數個氣體排氣管200之氣體管基座 300。在第4圖中，為方便，省略氣體供給管100、氣體排氣 管200及氣體管基座300以外之結構之圖式。此在後述之圖 式中亦相同。 氣體供給管100於進行對基板10之基板處理時，將基板 處理環境組成氣體供給至腔室20之内部。氣體排氣管200將 用於基板處理之廢氣排至腔室20之外部。 氣體供給管100及氣體排氣管200之截面之形狀未特別 限制’為方便製造，宜呈圓形。為易進行在腔室2〇内部擴 散之氣體之排氣，氣體排氣管2〇〇之直徑宜大於氣體供給管 1〇〇之直徑。氣體供給管1〇〇及氣體排氣管2〇〇之材質可包含 石英。 另一方面，在氣體管基座3〇〇上，交互配置氣體供給管 iOO及氣體排氣管200適合使腔室2〇内之氣體之擴散及從腔 室20之氣體之排氣過程順暢。 氣體管基座300發揮一面支撐氣體供給管1〇〇及氣體排 氣管200 ’ 一面使氣體供給管100及氣體排氣管200與設於腔 至20外部之氣體供給部（圖中未示）及氣體排氣部（圖中未示） 分別連結之作用。 第5圖係顯示於腔室2〇内配置有氣體供給管1〇〇及氣體 12 201036090 排氣管200之狀態之圖。 如第5圖所示，根據本發明第1實施形態，於腔室2〇内 之兩側設置有氣體管基座300，於各氣體管基座300連結有 氣體供給管100及氣體排氣管200。 參照第5圖，氣體管基座300於腔室20之兩側各設置2 個，共計4個，氣體管基座300之數全面地考慮腔室20之大 小、氣體管基座300之設置之容易性等，可進行多種變更。 〇 亦可依需要，於腔室20之兩側各設置1個、共計2個之氣體 管基座300。 於氣體管基座300交互連結氣體供給管1〇〇及氣體排氣 管200。如此交互排列之氣體供給管1〇〇及氣體排氣管2〇〇之 ' 狀態宜也適用於連結於交互相對之氣體管基座300之氣體 供給管100及氣體排氣管200的排列狀態。即，如第5圖所 示，可如任意之氣體供給管1〇〇藉由基板（圖中未示），與氣 體排氣管200交互相對，任意之氣體排氣管2〇〇藉由基板（圖 Q 中未示），與氣體供給管200交互相對般，設定氣體供給管 100及氣體排氣管200之排列。 又，參照第5圖，於設置在腔室2〇—側之氣體管基座300 連結3個氣體供給管1 〇〇及2個氣體排氣管2〇〇，於設置在腔 室20另一側之氣體管基座3〇〇連結2個氣體供給管1〇〇及3個 氣體排氣管200 ’連結於各氣體管基座3〇〇之氣體供給管1〇〇 及氣體排氣管200之數全面地考慮腔室2〇之大小、氣體供給 管100及氣體排氣管200之設置之容易性等，可進行多種變 更。惟，為使氣體之擴散及排氣過程順暢，設置於腔室2〇内 13 201036090 部之氣體供給管loo及氣體排氣管200之總數宜維持相同。 參照第4圖及第5圖，於氣體供給管100形成有供氣體淹 出之複數個氣體供給孔11〇，於氣體排氣管2〇〇形成有供氣 體流入之複數個氣體排氣孔210。氣體供給孔H0及氣體拂 氣孔210宜分別沿氣體供給管100及氣體排氣管2〇〇之長向 形成，並且，朝腔室20之内側方向、亦即朝向基板1〇形成。 氣體供給孔110及氣體排氣孔210之數可維持與裝載於腔室 20之基板數相同，考慮氣體之順暢供給及排氣，可進行多 種變更。 第6圖係顯示氣體供給管1 〇〇及氣體排氣管2〇〇連結於 氣體管基座300之狀態之立體圖。 參照第6圖’氣體管基座300可具有本體31〇、連結孔32〇 及氣體口 330而構成。 本體310形成預定大小，於内部形成空間，可作為從外 部供給之氣體之擴散空間來使用。在第6圖中，本體31〇形 成長方體，但未必限於此。 分隔壁312可將本體31〇之内部區隔成複數個。此時， 分隔壁312形成於後叙連結孔32G與氣體供給口徽及氣 體排氣口 33Gb間’藉由氣體供給口 33〇,供給之氣體可流入 至對應於此之氣體供給管刚，流人至氣體排氣f2〇〇之氣 體可排至對應於此之氣體排氣口 3働。在第6圖中本體31〇 之内部可以4個分隔壁312區隔成5個，而分隔壁312之數可 按氣體供給管1GG及氣體排氣管之數增減^可以此分隔 壁312之形成，附帶得到本體則、甚至是氣體管基座獅之 201036090 对久性之強化的效果。 連結孔320於本體31〇之上部形成複數個，於各連結孔 320連結氣體供給管1〇〇或氣體排氣管200之至少任—個。為 易進行氣體供給管100或氣體排氣管200之連結，各連結孔 320之直徑可形成相互不同。為使連結於連結孔32〇之氣體 供給管100或氣體排氣管200之連結穩固，可於連結孔32〇追 加連結凸緣322。 〇 氣體口 33〇可以從外部供給氣體之氣體供給口 33加及 將廢氣排至外部之氣體排氣口 330b構成。 氣體供給口 330a可於本體310之下部至少連結1個以 ， 上。氣體供給口 330a使從外部供給之氣體流入至氣體管基 ' 座300之内部。 氣體排氣口 330b可於氣體管基座300之下部至少連結1 個以上。氣體排氣口 330b將藉由氣體排氣管2〇〇流入之廢氣 排至腔室20之外部。 Ο 另一方面，可於本體310之内部進一步設氣體擴散板 料〇。第7圖係顯示於氣體管基座細之内部設有氣體擴散板 34〇之狀態的圖。 參照第7圖，氣體擴散板34〇形成板狀，水平地設於本 體31〇之内部。於氣體擴散板34〇涵蓋全體以—定間隔形成 =數個擴散孔342。擴散孔342之直徑宜形成遠小於氣體供 給口 3施之直徑。從外部所供給之氣體通過涵蓋氣體擴散 板340之所有區域而形成之擴散孔342而擴散。 另一方面，考慮從腔室20排氣體之過程，宜於氣體排 15 201036090 氣口 3 3 Ob與氣體排氣管200間不設氣體擴散板340。 另一方面，氣體供給管1〇〇及氣體排氣管200之排列亦 可如第8圖及第9圖所示變更。第8圖係顯示於腔室20内配置 氣體供給管1〇〇之狀態之立體圖。第9圖係顯示第8圖之氣體 供給管100連結於氣體管基座3〇〇之狀態的截面立體圖。 如第8圖及第9圖所示，根據本發明另一實施形態，於 腔室20内之兩側設置有氣體管基座3〇〇，於設置於腔室2〇内 之一側之氣體管基座3〇〇連結有氣體供給管1〇〇，於設置於 腔至20内之另一側之氣體管基座300連結有氣體排氣管 2〇〇。在第8圖及第9圖，為方便，僅顯示連結有腔室20内之 側之氣體供給管1〇〇的氣體管基座3〇〇作為參考。 如上述構成之本發明第1實施形態之批式基板處理裝 置1可如下述動作。 首先’將基板10裝載於設在腔室2〇内之載具30後，使 …、器70作動，進行對基板1〇之基板處理步驟。 此時’使加熱器70作動前，為將腔室2〇内部組成基板 處理％境，而藉由氣體供給口 33加供給諸如質素或氬之環 兄氣體。供給至氣體供給口 33〇a之氣體藉由氣體供給管1〇〇 及氣體供給孔11〇，供給至腔室2〇之内部。 第10圖係顯示藉由氣體供給口 330a供給之氣體擴散至 本體31〇之内部之狀態的圖。 如第10圖所示’從外部藉由氣體供給口 33似供給之氣 二地擴散至本體310之内部，且藉由氣體供給管100， 供給至腔室20之内部。 16 201036090 第11圖係顯示由氣體供給口 330a供給之氣體藉由設置 於本體310之内部之氣體擴散板340而擴散之狀態的圖。 如第11圖所示，從外部藉由氣體供給口 330a供給之氣 體均一地擴散至本體31〇之内部空間（氣體擴散板340之下 側之空間）’且通過氣體擴散板340之擴散孔342，移動至本 體310之内部空間（氣體擴散板340之上側之空間）後，再均一 地擴散至氣體擴散板340之上側之空間内，且藉由氣體供給 _ 管100，供給至腔室20之内部。 ❹ 最後，藉由與氣體供給管100交互排列或相對排列之氣 體排氣管200及排氣孔210而流入有用於基板處理環境組成 之廢氣的廢氣藉由氣體排氣口 330b，排至腔室2〇之外部。 如上述，在本發明中，使基板處理用氣體在氣體管基 座300之本體310之内部空間充分地擴散後(依據情況，在本 體310之内部因氣體擴散板34〇之設置而導出之二重空間内 更充分地擴散後），藉由氣體供給管1〇〇，供給至腔室2〇之 Ο 内°卩，而使基板處理用氣體均一地供給至腔室20内，藉此， 具有可對裝載於腔室20内之所有基板10進行均一之基板處 理之優點。 又，在本發明中，在將氣體供給管1〇〇及氣體排氣管2〇〇 ^歹丨成父互及/或相對之狀態下，進行基板處理用氣體之供 、及排氣，在基板處理過程中，使基板處理用氣體之壓力 2意腔室20全體維持均―，藉此，具有可對裝載於腔室2〇 之所有基板10進行均一之基板處理的優點。 第12‘圖係顯*H板處理裝置1之氣體供給管400之 17 201036090 結構的正面圖。第13圖係顯示批式基板處理裝置丨之氣體供 給管400之結構的立體圖。 參照第12圖及第13圖，氣體供給管4〇〇可具有單位供給 管410、第1喷射管420a、第2喷射管420b、第3喷射管42〇c、 第1噴射孔430a、第2噴射孔430b、第3噴射孔43〇c以及第i 連結管440a及第2連結管440b而構成。 藉由單位供給管410，從外部供給基板處理氣體。單位 供給管4卿成駭長度，垂直地設置於腔室之内部，單位 供給管彻之-端賴於外部之氣體供料置（_中未示）。 單位供給管4U)之-端形朗放，俾可供給基板處理氣體， 後述第1喷射管42Ga以垂直相交之狀態連結於單位供給管 410之另一端部。 第1喷射管4施、第2喷射管42〇b、第3喷射管42〇c藉由 單位供給管彻供給基板處理氣體後，對所裝載之複數個基 板1〇供給氣體。第i噴射管420a、第2噴射管傷、第3_ 管420c從腔㈣之上側往下側之方向依序配置。第i喷射管 4施、第2噴射管傷、第3喷射管4池與基板1〇之長邊方 向平行地配置。在本實卿態巾，氣龍給管係以具有 個喷射g 42〇a、4勘、4施者構成，喷射管之數可進行多 種變更。 Μ第1嘴射管420a連結於單位供給管彻之端部，第2喷射 s 420b及第3噴射官42〇c以第1連結管4他及第2連么士管 4她連續連結於第1喷射管俱。具體說明，第！噴射管· 之-端連結於單位供給#之m喷射管物之另一 18 201036090 端以第1連結管4他連結於第2喷射管4施之-端，第2噴射 管420b之另-端以第2連結管4儀連結於幻喷射管做之 -端。此時’第1喷射管微、第2喷射管4勘、第3喷射管 c、第1連結管4術及第2連結f娜連結成交互垂直： 交，藉此，如圖所示，全體可呈「5」形狀。 另方面考慮軋體供給管4〇〇之氣體之流動，第i噴 射官420a及第2噴射管420b之兩端宜開放。又，第3喷射管 〇 4施之連結於第2連結管4她之-端宜開放，其反側之另: 端宜封閉。此時，如第12圖所示，可使用蓋46〇，將第3喷 射管420c之一端封閉。封閉第丨連結管44〇a之—端時亦可 ' 使用蓋460。 可於第1噴射管420a、第2噴射管42〇b、第3噴射管42〇c 之表面朝基板100’形成複數個第丨喷射孔430a、第2喷射孔 430b、第3噴射孔43〇C。此時，第i噴射孔43〇a、第2喷射孔 430b、第3噴射孔43〇c可於各噴射管似加、42诎、42〇c之長 Q 向形成在一直線上。 另一方面，第1喷射孔430a、第2噴射孔43〇b、第3噴射 孔430c之直徑可沿氣體之行進方向逐漸增加。具體言之， 亦有形成於第1噴射管420a與第丨連結管44〇a之連結部位之 第1噴射孔430a之直徑大於形成於單位供給管41〇與第1喷 射管420a之連結部位之第！噴射孔43〇a之直徑的情形。第2 噴射孔430b及第3喷射孔430c之直徑亦可與此同樣地沿氣 體之行進方向逐漸增加。 另一方面，第1噴射孔430a、第2噴射孔430b、第3噴射 19 201036090 孔430c之直徑可沿氣體之行進方向階段性地增加。具體地 β兒明’各喷射管420a、420b、420c内之噴射孔43〇a、430b、 430c之直徑相同，第2喷射管42〇b之第2噴射孔430b之直徑 可形成大於第1喷射管420a之第1喷射孔43〇a，第3喷射管 420c之第3噴射孔430c之直徑可形成大於第2喷射管42肋之 第2噴射孔430b。 如此，在氣體供給管400内，於氣體之流動方向，噴射 孔430a、430b、430c之直徑逐漸或階段性地增加係為防止 藉由單位供給管410供給之氣體越遠離單位供給管41〇之供 給管，氣體之壓力越降低，藉由噴射孔噴射之氣體之量越 減少之故。 另一方面，宜設置支撐台450，支撐氣體供給管4〇〇。 支撐台450可設置成與單位供給管41〇平行，且連結於第1連 結管440a。具體說明，支撐台450之上端與將第丨噴射管42〇a 及第2噴射管420b連結之第1連結管440a接觸，支撐台450之 下端與氣體管基座300接觸。又，為確保氣體供給管4〇〇之 構造之穩定性，第3噴射管420c之一端可接觸支撐台45〇之 一側。 以下，參照第14圖〜第17圖，說明如上述構成之氣體供 給管400之使用例。 第1使用例 第14圖係顯示批式基板處理裝置1之氣體供給管4〇〇之 使用狀態的圖。 參照第14圖’在腔室20之内部’可於基板1〇之長邊側 20 201036090 設置3個氣體供給管4〇〇。此係將氣體供給管400全體之大小 縮小後’為可因應基板1〇之大小，而配置複數個氣體供給 管400的情形。在本使用例中，顯示3個氣體供給管4〇〇，可 依基板10及氣體供給管4〇〇之大小進行多種變更。 從腔室20之外部供給至氣體供給管4〇〇之氣體流入至 單位供給管410，所流入之氣體流入至連結於單位供給管 410之第1喷射管42〇a，所流入之氣體藉由第1喷射管420a之 第1喷射孔430a ’供給至基板10。未從第1喷射管42〇a喷射 之氣體藉由第1連結管440a，流入至第2喷射管420b後，藉 由形成於第2噴射管420b之第2喷射孔430b，供給至基板 10。未從第2喷射管420b喷射之氣體藉由第2連結管440b， 流入至第3噴射管420c後，藉由形成於第3噴射管420c之第3 噴射孔430c，供給至基板1〇。 此時’如上述，第1喷射孔430a、第2喷射孔430b、第3 噴射孔430c之直徑在氣體供給管400内，沿著氣體之行進方 向逐漸或階段性地增加。藉此，藉將基板處理氣體均一地 供給至腔室20内，可對裝載於腔室20内之所有基板1〇進行 均一之基板處理。 第2使用例 第15圖係顯示批式基板處理裝置1之氣體供給管4〇〇a 之使用狀態的圖。 參照第15圖，在腔室20之内部，可於基板10之長邊側 設置1個氣體供給管400a。此係使氣體供給管400全體之大 小對應於基板10之大小後，僅配置1個氣體供給管400之情 21 201036090 形。即’在本使用例中，氣體供給管獅a之第丨喷射管42〇a、 第2喷射s 42Gb、第射管42Ge之長度實質上可與基板1〇 之長邊之長度相同。其他之氣體供給管糊a之結構由於與 第1使用例之氣體供給管伽相同，故省略詳細說明。 第3使用例 第16圖係顯示批式基板處理裝置1之氣體供給管400之 使用狀態的圖。根據本使用例，可將第丨使用例之氣體供給 s 400連、.Ό於上述氣體管基座細。由於氣體管基座则之結 構及氣體供給管_與氣體管基座之連結方式與上述相 同，故省略詳細之說明。 第4使用例 第17圖係顯示批式基板處理裝置1之氣體供給管400a 之使用狀態的圖。根據本使用例，可將第2使用例之氣體供 給管4·連結於上錢料基座 m料基座3〇〇 之結構及氣體供給管400與氣體管基座3〇〇之連結方式與上 述相同，故省略詳細之說明。 本發明如上述舉了較佳之實施例來說明，但不限於上 述實施形態，在不脫離本發明精神之範圍内，具有今發明 所屬之技術領域之一般知識之人可進行多種變形及變更。 該種變形例及變更例屬於本發明與所附加之申請專利範圍 之範圍内。Inside the chamber 20, a plurality of tubes 70 for heating the substrate 10 to directly heat the substrate 10 may be disposed at regular intervals. At this time, the heater 70 can be inserted and fixed by a plurality of holes % formed along the outer wall of the chamber 2 . The structure of the heater 7〇 will be described later. Fig. 2 is a perspective view showing the arrangement state of the substrate 1A, the main heater unit 40, and the auxiliary heater unit 50 of the batch type heat treatment apparatus 1. Referring to Fig. 2, the main heater unit 40 has a plurality of unit main heaters 7A disposed at intervals of a short distance in the short side direction of the substrate 1A. The unit main heater 70 is generally a long rod-shaped heater, and a heating element is inserted inside the quartz tube to constitute a main heater unit (four) that is heated by an external power source by terminals provided at both ends. Unit body. In the present embodiment, the main heater unit is composed of 14 unit main heaters 7A, and the number of main heating units (4) constituting the main heater early (10) can be variously changed depending on the size of the substrate 10 mounted in the chamber (4). . The main heater is configured in multiples. The unit 40 is disposed in the plurality of main add-on units _ along the stacking direction of the substrate 10 with a predetermined interval between the substrates 1 . In the present embodiment, the three substrates 10 are arranged between the four main heater units 40, and the number of the main heater units 4 can be variously changed depending on the number of the substrates 10 mounted in the chamber 20. . The substrate 10 is preferably disposed at the center between the main heater units 40. Further, the substrate 10 and the main heating n-cell paste are preferably spaced apart from each other when the substrate is placed in the chamber 2, so as not to interfere with the movement of the substrate arm (not shown) of the substrate U. In this way, the batch heat treatment apparatus 1 is provided with a main heater single t1 4G 'substrate 1G which can be configured to cover the substrate 1G in the upper part and the lower part of the substrate 10 and the main unit heating (4) can cover the entire area, from 28 units. The main heater 70 uniformly receives heat and performs uniform substrate processing. The auxiliary heater unit 5G has a first auxiliary heater unit 5A disposed in parallel along the short side direction of the substrate 10, and a second auxiliary heater unit 50b disposed along the longitudinal direction of the substrate (1). The first auxiliary heater unit 5A has a plurality of second unit auxiliary heaters disposed on both sides of the main heater unit 4A in parallel with the early main heating (4). In the present embodiment, the first auxiliary heating unit is disposed in a total of eight i-th unit auxiliary heaters on both sides of the four main heater units 4G, and constitutes the unit constituting the first auxiliary heater unit 50a. The number of the switches 52a can be variously changed depending on the number of the main heater units provided in the chamber. The second auxiliary heating H unit has a plurality of second unit auxiliary heating (four) which are disposed perpendicularly to the unit main twister 70 on both sides of the main heater unit 4, and are vertically disposed. In the present embodiment, the second auxiliary heater unit (10) is configured by the auxiliary heater 52b which is disposed on the upper and lower sides of the four main heater units 4A, and constitutes the second auxiliary heating. The number of the second early auxiliary heater 52b of the unit unit can be changed according to the number of the main loader provided in the chamber 2〇. The main plus_unit 4q is placed in the center between the auxiliary heater units 50b. The first unit auxiliary heater 52a and the second unit auxiliary heater 52b are preferably of the same length as the unit main heater 70. Thus, by using the batch heat treatment apparatus in the four outer peripheral portions of the main heater unit 4, the magic auxiliary heater unit 50a composed of eight second unit auxiliary heaters and the second unit auxiliary heating by U) are provided. The second auxiliary heater unit 5Gb of the main heating element 4G receives heat from the unit heaters 52a and 52b, and the outer peripheral portion of the main heater unit is in contact with the external environment. Thereby, heat loss in the chamber 20 which is inevitably generated can be prevented. Fig. 3 is a perspective view showing the structure of the carrier of the batch heat treatment apparatus. Referring to Fig. 3, a plurality of carriers 30 for supporting the substrate 10 loaded on the chamber are disposed inside the chamber 20. The carrier 30 is preferably provided in a state of supporting the long side of the substrate 1A. In the present embodiment, the carrier 3 is provided on each of the two long sides of the substrate 1 , and a total of six, and the substrate 1 is stably supported by the substrate 1 , and may be provided in three or more numbers, depending on the substrate. A variety of changes are made in size. The material of the carrier 30 is preferably quartz. Further, referring to Fig. 3, the substrate 10 is preferably placed on the carrier 30 in a state of being placed on the rack. During the substrate processing, when the substrate processing temperature reaches the softening temperature of the glass substrate, the phenomenon of substrate deflection occurs due to the weight of the substrate itself, and in particular, the deflection phenomenon increases with the large area of the substrate 11 201036090 And form a bigger problem. In order to solve this problem, the substrate processing is performed in a state where the substrate 10 is placed on the holder 12. Fig. 4 is a perspective view of the A-A section of Fig. 1. As shown in Fig. 4, a gas pipe base 300 to which a plurality of gas supply pipes 100 and a plurality of gas exhaust pipes 200 are connected is provided on one side of the chamber 20. In Fig. 4, the drawings of the structures other than the gas supply pipe 100, the gas exhaust pipe 200, and the gas pipe base 300 are omitted for convenience. This is also the same in the drawings described later. The gas supply pipe 100 supplies the substrate processing environment constituent gas to the inside of the chamber 20 when performing the substrate processing on the substrate 10. The gas exhaust pipe 200 discharges the exhaust gas for substrate processing to the outside of the chamber 20. The shape of the cross section of the gas supply pipe 100 and the gas exhaust pipe 200 is not particularly limited. It is preferably circular in order to facilitate manufacture. In order to facilitate the exhaust of the gas diffused inside the chamber 2, the diameter of the gas exhaust pipe 2〇〇 is preferably larger than the diameter of the gas supply pipe 1〇〇. The material of the gas supply pipe 1 and the gas exhaust pipe 2〇〇 may include quartz. On the other hand, on the gas tube base 3, the gas supply pipe iOO and the gas exhaust pipe 200 are alternately arranged to facilitate the diffusion of the gas in the chamber 2 and the gas exhaust process from the chamber 20. The gas pipe base 300 supports the gas supply pipe 1 and the gas exhaust pipe 200 ′ on one side, and the gas supply pipe 100 and the gas exhaust pipe 200 and a gas supply unit (not shown) provided outside the cavity to 20 And the gas exhaust unit (not shown) is connected separately. Fig. 5 is a view showing a state in which a gas supply pipe 1 and a gas 12 201036090 exhaust pipe 200 are disposed in a chamber 2A. As shown in Fig. 5, according to the first embodiment of the present invention, a gas pipe base 300 is provided on both sides of the chamber 2, and a gas supply pipe 100 and a gas exhaust pipe are connected to each gas pipe base 300. 200. Referring to Fig. 5, the gas tube base 300 is provided on each side of the chamber 20 in two, for a total of four. The number of the gas tube bases 300 fully considers the size of the chamber 20 and the setting of the gas tube base 300. Various changes can be made, such as ease.气体 One or two gas tube bases 300 may be provided on each side of the chamber 20 as needed. The gas supply pipe 1 and the gas exhaust pipe 200 are alternately connected to the gas pipe base 300. The state of the gas supply pipe 1 and the gas exhaust pipe 2 that are alternately arranged in this manner is also suitable for the arrangement state of the gas supply pipe 100 and the gas exhaust pipe 200 connected to the gas pipe base 300 that is opposite to each other. That is, as shown in FIG. 5, any gas supply pipe 1 can be alternately opposed to the gas exhaust pipe 200 by a substrate (not shown), and any gas exhaust pipe 2 can be used by the substrate. (not shown in Fig. Q), the arrangement of the gas supply pipe 100 and the gas exhaust pipe 200 is set as opposed to the gas supply pipe 200. Further, referring to Fig. 5, three gas supply pipes 1 and two gas exhaust pipes 2 are connected to the gas pipe base 300 provided on the side of the chamber 2, and are disposed in the chamber 20 The gas pipe base 3 on the side is connected to the two gas supply pipes 1 〇〇 and the three gas exhaust pipes 200 ′. The gas supply pipe 1 〇〇 and the gas exhaust pipe 200 connected to the respective gas pipe pedestals 3 〇〇 The number can be comprehensively considered in consideration of the size of the chamber 2, the ease with which the gas supply pipe 100 and the gas exhaust pipe 200 are installed, and the like. However, in order to smooth the gas diffusion and the exhaust process, the total number of the gas supply pipe loo and the gas exhaust pipe 200 disposed in the chamber 2 13 13 201036090 should be maintained the same. Referring to FIGS. 4 and 5, a plurality of gas supply holes 11a for flooding the gas are formed in the gas supply pipe 100, and a plurality of gas exhaust holes 210 through which the gas flows are formed in the gas exhaust pipe 2''. . The gas supply hole H0 and the gas enthalpy hole 210 are preferably formed along the longitudinal direction of the gas supply pipe 100 and the gas exhaust pipe 2, respectively, and are formed toward the inner side of the chamber 20, that is, toward the substrate 1A. The number of the gas supply holes 110 and the gas exhaust holes 210 can be kept the same as the number of substrates mounted in the chamber 20, and various changes can be made in consideration of smooth supply and exhaust of the gas. Fig. 6 is a perspective view showing a state in which the gas supply pipe 1 and the gas exhaust pipe 2 are connected to the gas pipe base 300. Referring to Fig. 6, the gas pipe base 300 may be constituted by a main body 31, a coupling hole 32, and a gas port 330. The body 310 is formed in a predetermined size to form a space inside, and can be used as a diffusion space for gas supplied from the outside. In Fig. 6, the body 31 is formed in a rectangular shape, but is not necessarily limited thereto. The partition wall 312 can divide the interior of the body 31 into a plurality. At this time, the partition wall 312 is formed between the rear connection hole 32G and the gas supply port and the gas exhaust port 33Gb by the gas supply port 33, and the supplied gas can flow into the gas supply pipe corresponding thereto. The gas of the human to gas exhaust gas f2〇〇 can be discharged to the gas exhaust port 3働 corresponding thereto. In the figure 6, the inside of the body 31 can be divided into five partition walls 312, and the number of the partition walls 312 can be increased or decreased according to the number of gas supply pipes 1GG and gas exhaust pipes. Forming, with the addition of the body, even the gas tube pedestal lion's 201036090 effect on the strengthening of the long-term. A plurality of connection holes 320 are formed in the upper portion of the main body 31A, and at least one of the gas supply pipe 1 or the gas exhaust pipe 200 is connected to each of the connection holes 320. In order to facilitate the connection of the gas supply pipe 100 or the gas exhaust pipe 200, the diameters of the respective connection holes 320 may be different from each other. In order to stabilize the connection between the gas supply pipe 100 or the gas exhaust pipe 200 connected to the connection hole 32, the connection flange 32 can be caught in the connection hole 32. The gas port 33 is formed of a gas supply port 33 for supplying gas from the outside and a gas exhaust port 330b for discharging the exhaust gas to the outside. The gas supply port 330a may be connected to at least one of the lower portions of the body 310. The gas supply port 330a allows the gas supplied from the outside to flow into the inside of the gas pipe base 'seat 300. The gas exhaust port 330b may be connected to at least one or more of the lower portions of the gas pipe base 300. The gas exhaust port 330b discharges the exhaust gas flowing in through the gas exhaust pipe 2 to the outside of the chamber 20. Ο On the other hand, a gas diffusion plate material can be further provided inside the body 310. Fig. 7 is a view showing a state in which a gas diffusion plate 34 is provided inside the base of the gas pipe. Referring to Fig. 7, the gas diffusion plate 34 is formed in a plate shape and horizontally disposed inside the body 31. The gas diffusion plate 34 〇 covers the entire portion at a predetermined interval = a plurality of diffusion holes 342. The diameter of the diffusion hole 342 is preferably formed to be much smaller than the diameter of the gas supply port 3. The gas supplied from the outside is diffused by the diffusion holes 342 formed to cover all the regions of the gas diffusion plate 340. On the other hand, in consideration of the process from the exhaust body of the chamber 20, it is preferable that the gas diffusion plate 340 is not provided between the gas discharge port 3 3 Ob and the gas exhaust pipe 200. On the other hand, the arrangement of the gas supply pipe 1 and the gas exhaust pipe 200 can be changed as shown in Figs. 8 and 9. Fig. 8 is a perspective view showing a state in which the gas supply pipe 1 is disposed in the chamber 20. Fig. 9 is a cross-sectional perspective view showing a state in which the gas supply pipe 100 of Fig. 8 is connected to the gas pipe base 3'. As shown in FIGS. 8 and 9, according to another embodiment of the present invention, a gas pipe base 3 is disposed on both sides of the chamber 20, and the gas is disposed on one side of the chamber 2 A gas supply pipe 1 is connected to the pipe base 3, and a gas exhaust pipe 2 is connected to the gas pipe base 300 provided on the other side of the cavity 20. In Figs. 8 and 9, for convenience, only the gas pipe base 3〇〇 to which the gas supply pipe 1〇〇 on the side in the chamber 20 is connected is shown as a reference. The batch substrate processing apparatus 1 according to the first embodiment of the present invention configured as described above can operate as follows. First, after the substrate 10 is placed on the carrier 30 provided in the chamber 2, the device 70 is operated to perform a substrate processing step for the substrate 1 . At this time, before the heater 70 is actuated, the substrate 2 is internally treated to form the substrate processing %, and the gas supply port 33 is supplied with a ring gas such as mass or argon. The gas supplied to the gas supply port 33〇a is supplied to the inside of the chamber 2 through the gas supply pipe 1〇〇 and the gas supply hole 11〇. Fig. 10 is a view showing a state in which the gas supplied through the gas supply port 330a is diffused into the inside of the body 31. As shown in Fig. 10, the gas supplied from the outside through the gas supply port 33 is diffused into the inside of the body 310, and supplied to the inside of the chamber 20 by the gas supply pipe 100. 16 201036090 Fig. 11 is a view showing a state in which the gas supplied from the gas supply port 330a is diffused by the gas diffusion plate 340 provided inside the body 310. As shown in Fig. 11, the gas supplied from the outside through the gas supply port 330a is uniformly diffused to the inner space of the body 31 (the space on the lower side of the gas diffusion plate 340)' and passes through the diffusion hole 342 of the gas diffusion plate 340. After moving to the internal space of the body 310 (the space on the upper side of the gas diffusion plate 340), it is uniformly diffused into the space above the gas diffusion plate 340, and supplied to the chamber 20 by the gas supply_tube 100. internal. Finally, the exhaust gas flowing into the exhaust gas composed of the substrate processing environment by the gas exhaust pipe 200 and the exhaust hole 210 which are alternately arranged or arranged opposite to the gas supply pipe 100 is discharged to the chamber through the gas exhaust port 330b. 2 〇 outside. As described above, in the present invention, after the substrate processing gas is sufficiently diffused in the internal space of the body 310 of the gas tube base 300 (depending on the case, the inside of the body 310 is derived by the arrangement of the gas diffusion plate 34). After being sufficiently diffused in the heavy space, the gas is supplied to the chamber 2 by the gas supply tube 1〇〇, and the substrate processing gas is uniformly supplied into the chamber 20, thereby having The advantage of uniform substrate processing can be performed on all of the substrates 10 loaded in the chamber 20. Further, in the present invention, the supply of the substrate processing gas and the exhaust gas are performed in a state in which the gas supply pipe 1 and the gas exhaust pipe 2 are alternated and/or opposed to each other. During the substrate processing, the pressure of the substrate processing gas 2 is maintained in the entirety of the chamber 20, thereby providing an advantage of uniform substrate processing for all of the substrates 10 mounted on the chamber 2A. Fig. 12' is a front view showing the structure of the gas supply pipe 400 of the *H plate processing apparatus 1 201036090. Fig. 13 is a perspective view showing the structure of the gas supply pipe 400 of the batch substrate processing apparatus. Referring to Figures 12 and 13, the gas supply pipe 4A may have a unit supply pipe 410, a first injection pipe 420a, a second injection pipe 420b, a third injection pipe 42〇c, a first injection hole 430a, and a second The injection hole 430b, the third injection hole 43〇c, and the i-th connection pipe 440a and the second connection pipe 440b are configured. The substrate processing gas is supplied from the outside by the unit supply pipe 410. The unit supply pipe 4 is formed in a length perpendicular to the inside of the chamber, and the unit supply pipe is completely disposed at the end of the gas supply (not shown). The unit supply pipe 4U) is disposed in an end shape, and the substrate processing gas can be supplied, and the first injection pipe 42Ga, which will be described later, is connected to the other end portion of the unit supply pipe 410 in a state of being vertically intersected. The first injection pipe 4, the second injection pipe 42〇b, and the third injection pipe 42〇c are supplied with the substrate processing gas by the unit supply pipe, and then the gas is supplied to the plurality of substrates 1〇 loaded. The i-th injection pipe 420a, the second injection pipe injury, and the third_tube 420c are arranged in this order from the upper side to the lower side of the cavity (four). The i-th injection pipe 4 and the second injection pipe are wound, and the third injection pipe 4 is disposed in parallel with the longitudinal direction of the substrate 1〇. In the case of the present embodiment, the air dragon is provided with a spray g 42〇a, 4 survey, and 4 casters, and the number of the spray tubes can be variously changed. The first nozzle tube 420a is connected to the end of the unit supply tube, and the second injection s 420b and the third injection unit 42〇c are continuously connected to each other by the first connection tube 4 and the second connection scorpion tube 4 1 spray pipe. Specific instructions, the first! The other end of the injection pipe is connected to the other one of the injection pipes of the unit supply #201036090. The first connection pipe 4 is connected to the end of the second injection pipe 4, and the other end of the second injection pipe 420b. The second connecting tube 4 is connected to the end of the magic jet tube. At this time, the first injection tube micro, the second injection tube 4, the third injection tube c, the first connection tube 4, and the second connection f are connected in an alternating vertical direction: It can be in the shape of "5". On the other hand, in consideration of the flow of the gas in the rolling body supply pipe 4, both ends of the i-th injection 420a and the second injection pipe 420b are preferably opened. Further, the third injection pipe 〇 4 is connected to the second connection pipe 4, and the other end thereof should be closed, and the other end of the opposite side should be closed. At this time, as shown in Fig. 12, one end of the third injection pipe 420c can be closed by using the cover 46A. The cover 460 can also be used when closing the end of the second connecting pipe 44〇a. A plurality of second injection holes 430a, second injection holes 430b, and third injection holes 43 are formed on the surface of the first injection pipe 420a, the second injection pipe 42b, and the third injection pipe 42〇c toward the substrate 100'. C. At this time, the i-th injection hole 43A, the second injection hole 430b, and the third injection hole 43〇c can be formed on the straight line in the length Q direction of each of the injection pipes, 42诎, 42〇c. On the other hand, the diameters of the first injection hole 430a, the second injection hole 43b, and the third injection hole 430c can be gradually increased in the traveling direction of the gas. Specifically, the diameter of the first injection hole 430a formed at the connection portion between the first injection pipe 420a and the second connection pipe 44A is larger than the connection portion formed between the unit supply pipe 41A and the first injection pipe 420a. The first! The case of the diameter of the injection hole 43〇a. Similarly, the diameters of the second injection hole 430b and the third injection hole 430c may gradually increase in the traveling direction of the gas. On the other hand, the diameters of the first injection hole 430a, the second injection hole 430b, and the third injection 19 201036090 hole 430c may be gradually increased in the traveling direction of the gas. Specifically, the diameters of the injection holes 43A, 430b, and 430c in the respective injection pipes 420a, 420b, and 420c are the same, and the diameter of the second injection holes 430b of the second injection pipe 42b can be formed larger than the first injection. The first injection hole 43〇a of the tube 420a and the third injection hole 430c of the third injection pipe 420c have a diameter larger than the second injection hole 430b of the second injection pipe 42. As described above, in the gas supply pipe 400, the diameters of the injection holes 430a, 430b, and 430c are gradually or stepwisely increased in the flow direction of the gas to prevent the gas supplied from the unit supply pipe 410 from being further away from the unit supply pipe 41. In the supply pipe, the lower the pressure of the gas, the smaller the amount of gas injected through the injection holes. On the other hand, it is preferable to provide the support table 450 to support the gas supply pipe 4'. The support table 450 may be disposed in parallel with the unit supply tube 41A and coupled to the first connection tube 440a. Specifically, the upper end of the support table 450 is in contact with the first connection pipe 440a that connects the second injection pipe 42A and the second injection pipe 420b, and the lower end of the support table 450 is in contact with the gas pipe base 300. Further, in order to ensure the stability of the structure of the gas supply pipe 4, one end of the third injection pipe 420c can contact the side of the support table 45A. Hereinafter, an example of use of the gas supply pipe 400 having the above configuration will be described with reference to Figs. 14 to 17 . First use example Fig. 14 is a view showing a state in which the gas supply pipe 4 of the batch substrate processing apparatus 1 is used. Referring to Fig. 14 'inside the chamber 20', three gas supply pipes 4 可 can be provided on the long side 20 201036090 of the substrate 1 . In this case, the size of the entire gas supply pipe 400 is reduced, and a plurality of gas supply pipes 400 are disposed in accordance with the size of the substrate 1 . In the present use example, three gas supply pipes 4 are displayed, and various changes can be made depending on the size of the substrate 10 and the gas supply pipe 4A. The gas supplied from the outside of the chamber 20 to the gas supply pipe 4 flows into the unit supply pipe 410, and the inflowing gas flows into the first injection pipe 42A connected to the unit supply pipe 410, and the inflowing gas is passed by The first injection hole 430a' of the first injection pipe 420a is supplied to the substrate 10. The gas that has not been ejected from the first injection pipe 42A is flown into the second injection pipe 420b by the first connection pipe 440a, and is supplied to the substrate 10 by the second injection hole 430b formed in the second injection pipe 420b. The gas that has not been ejected from the second injection pipe 420b flows into the third injection pipe 420c through the second connection pipe 440b, and is supplied to the substrate 1A by the third injection hole 430c formed in the third injection pipe 420c. At this time, as described above, the diameters of the first injection hole 430a, the second injection hole 430b, and the third injection hole 430c are gradually or stepwisely increased in the gas supply pipe 400 along the traveling direction of the gas. Thereby, by uniformly supplying the substrate processing gas into the chamber 20, it is possible to perform uniform substrate processing on all the substrates 1 loaded in the chamber 20. Second use example Fig. 15 is a view showing a state of use of the gas supply pipe 4A of the batch substrate processing apparatus 1. Referring to Fig. 15, a gas supply pipe 400a can be provided on the long side of the substrate 10 inside the chamber 20. In this case, after the size of the entire gas supply pipe 400 corresponds to the size of the substrate 10, only one gas supply pipe 400 is disposed. That is, in the present application example, the lengths of the second injection tube 42A, the second injection s42Gb, and the second tube 42Ge of the gas supply tube lion a are substantially the same as the length of the long side of the substrate 1A. Since the configuration of the other gas supply tube paste a is the same as that of the gas supply tube of the first use example, detailed description thereof will be omitted. Third use example Fig. 16 is a view showing a state of use of the gas supply pipe 400 of the batch substrate processing apparatus 1. According to this use example, the gas supply s 400 of the second use example can be connected to the gas tube base. Since the structure of the gas pipe base and the gas supply pipe_connection to the gas pipe base are the same as described above, the detailed description will be omitted. Fourth use example Fig. 17 is a view showing a state of use of the gas supply pipe 400a of the batch substrate processing apparatus 1. According to this use example, the gas supply pipe 4 of the second use example can be connected to the structure of the upper material base m base 3, and the connection mode between the gas supply pipe 400 and the gas pipe base 3 can be Since the above is the same, detailed description is omitted. The present invention has been described with reference to the preferred embodiments thereof, and the invention is not limited thereto, and various modifications and changes can be made without departing from the spirit and scope of the invention. Such modifications and variations are within the scope of the invention and the scope of the appended claims.
C圖式簡單説明I 第1圖係顯示批式基板處理裝置之結構之立體圖。 第2圖係顯示批式熱處理裝置之基板、主加熱器單元及 22 201036090 輔助加熱器單元之配置狀態的立體圖。 第3圖係顯示批式熱處理裝置之載具之結構的立體圖。 第4圖係第1圖之A-A截面圖。 第5圖係顯示於腔室内配置氣體供給管及氣體排氣管 之狀態的圖。 第6圖係顯示氣體供給管及氣體排氣管連結於氣體管 基座之狀態之立體圖。 第7圖係顯示於氣體管基座之内部設有氣體擴散板之 狀態的圖。 第8圖係顯示於腔室内配置有氣體供給管之狀態之立 體圖。 第9圖係顯示第8圖之氣體供給管連結於氣體管基座之 狀態的截面立體圖。 第10圖係顯示藉由氣體供給口供給之氣體擴散於本體 内部之狀態的圖。 第11圖係顯示藉由氣體供給口供給之氣體藉由設於本 體内部之氣體擴散板擴散之狀態的圖。 第12圖係顯示批式基板處理裝置之氣體供給管之結構 的正面圖。 第13圖係顯示批式基板處理裝置之氣體供給管之結構 的立體圖。 第14圖係顯示批式基板處理裝置之氣體供給管之使用 狀態的圖。 第15圖係顯示批式基板處理裝置之氣體供給管之使用 23 201036090 狀態的圖。 第16圖係顯示批式基板處理裝置之氣體供給管之使用 狀態的圖。 第17圖係顯示批式基板處理裝置之氣體供給管之使用 狀態的圖。 【主要元件符號說明】 1...批式基板處理裝置 310...本體 10...基板 312...分隔壁 12···架 320...連結孔 20...腔室 322…凸緣 22...第 1 開口 330...氣體口 24...第 2開口 330a...氣體供給口 26.··孔 330b...氣體排氣口 30...載具 340...氣體擴散板 40...主加熱器單元 342...擴散孔 50...輔助加熱器單元 410...單位供給管 50a...第1輔助加熱器單元 420a...第1噴射管 50b...第2輔助加熱器單元 420b...第2喷射管 52a...第1單位輔助加熱器 420c...第3喷射管 52b...第2單位輔助加熱器 430a...第1喷射孔 70...加熱器 430b...第2喷射孔 100,400,400a...氣體供給管 430c…第3喷射孔 110...氣體供給孔 440a...第1連結管 200...氣體排氣管 440b...第2連結管 210...氣體排氣孔 450...支撐台 300...氣體管基座 460...蓋 24BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing the structure of a batch substrate processing apparatus. Fig. 2 is a perspective view showing the arrangement state of the substrate of the batch type heat treatment apparatus, the main heater unit, and 22 201036090 auxiliary heater unit. Figure 3 is a perspective view showing the structure of the carrier of the batch heat treatment apparatus. Figure 4 is a cross-sectional view taken along line A-A of Figure 1. Fig. 5 is a view showing a state in which a gas supply pipe and a gas exhaust pipe are disposed in a chamber. Fig. 6 is a perspective view showing a state in which a gas supply pipe and a gas exhaust pipe are coupled to a gas pipe base. Fig. 7 is a view showing a state in which a gas diffusion plate is provided inside the base of the gas pipe. Fig. 8 is a perspective view showing a state in which a gas supply pipe is disposed in a chamber. Fig. 9 is a cross-sectional perspective view showing a state in which the gas supply pipe of Fig. 8 is coupled to the base of the gas pipe. Fig. 10 is a view showing a state in which a gas supplied from a gas supply port is diffused inside the body. Fig. 11 is a view showing a state in which a gas supplied from a gas supply port is diffused by a gas diffusion plate provided inside the body. Fig. 12 is a front elevational view showing the structure of a gas supply pipe of the batch substrate processing apparatus. Fig. 13 is a perspective view showing the structure of a gas supply pipe of the batch substrate processing apparatus. Fig. 14 is a view showing the state of use of the gas supply pipe of the batch substrate processing apparatus. Fig. 15 is a view showing the use of a gas supply pipe of a batch substrate processing apparatus. Fig. 16 is a view showing the state of use of the gas supply pipe of the batch type substrate processing apparatus. Fig. 17 is a view showing the state of use of the gas supply pipe of the batch type substrate processing apparatus. [Description of main component symbols] 1... Batch substrate processing apparatus 310: Main body 10: Substrate 312... Partition wall 12···Frame 320... Connection hole 20... Chamber 322... Flange 22...first opening 330...gas port 24...second opening 330a...gas supply port 26.·hole 330b...gas exhaust port 30...carrier 340. .. gas diffusion plate 40...main heater unit 342...diffusion hole 50...auxiliary heater unit 410...unit supply pipe 50a...first auxiliary heater unit 420a...first Injection tube 50b...second auxiliary heater unit 420b...second injection tube 52a...first unit auxiliary heater 420c...third injection tube 52b...second unit auxiliary heater 430a. .. first injection hole 70...heater 430b...second injection hole 100,400,400a...gas supply pipe 430c...third injection hole 110...gas supply hole 440a...first connection pipe 200 ... gas exhaust pipe 440b... second connecting pipe 210... gas exhaust hole 450... support table 300... gas pipe base 460... cover 24