KR20120019645A - Batch type heat treatment apparatus for large substrate - Google Patents

Batch type heat treatment apparatus for large substrate Download PDF

Info

Publication number
KR20120019645A
KR20120019645A KR1020100082969A KR20100082969A KR20120019645A KR 20120019645 A KR20120019645 A KR 20120019645A KR 1020100082969 A KR1020100082969 A KR 1020100082969A KR 20100082969 A KR20100082969 A KR 20100082969A KR 20120019645 A KR20120019645 A KR 20120019645A
Authority
KR
South Korea
Prior art keywords
substrate
holder
heat treatment
chamber
boat
Prior art date
Application number
KR1020100082969A
Other languages
Korean (ko)
Inventor
강호영
송종호
Original Assignee
주식회사 테라세미콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to KR1020100082969A priority Critical patent/KR20120019645A/en
Publication of KR20120019645A publication Critical patent/KR20120019645A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

The present invention provides a chamber 100 that provides a space in which the substrate S is heat treated; A heater (110) installed in multiple layers in the chamber (100); A boat (120) installed inside the chamber (100) and having a substrate (S) positioned between the heaters (110) and stacked in multiple layers; A holder (H) which is detachably installed in multiple layers in the boat (120) and supports each substrate (S); And a plurality of substrate supporters 131 provided on the holder H to support the substrate S.

Description

Batch Type Heat Treatment Apparatus For Large Substrate

The present invention relates to a batch heat treatment apparatus for a large substrate, and more particularly, to a batch heat treatment apparatus for a large substrate capable of performing a heat treatment in a batch by loading a plurality of large substrates.

Annealing devices used in the manufacture of semiconductors, flat panel displays, and solar cells are responsible for the heat treatment steps necessary for processes such as crystallization and phase change for a predetermined thin film deposited on a substrate such as a silicon wafer or glass. to be.

Representative annealing apparatus is a silicon crystallization apparatus for crystallizing amorphous silicon deposited on a glass substrate with polysilicon when manufacturing a liquid crystal display or thin film crystalline silicon solar cell.

In order to perform such a crystallization process (heat treatment process), a heat treatment apparatus capable of heating a substrate on which a predetermined thin film is formed should be provided. For example, at least 550 to 600 ° C. temperature is required for the crystallization of amorphous silicon.

Typically, the heat treatment apparatus includes a sheet type that can perform heat treatment on one substrate and a batch type that can perform heat treatment on a plurality of substrates. Single leaf type has the advantage of simple configuration of the device, but the disadvantage of low productivity has been in the spotlight for the recent mass production.

Conventional batch heat treatment apparatus is a boat loaded with a plurality of substrates, a chamber made of a quartz material that provides a heat treatment space for the plurality of substrates loaded on the boat, to surround the outer periphery of the chamber to create a heat treatment environment in the chamber It is comprised including the installed heater, the gas supply pipe which supplies the gas required for heat-processing atmosphere composition of a board | substrate into a chamber, and the gas discharge pipe which discharges gas.

The conventional batch heat treatment apparatus has a structure in which a substrate is loaded on a boat while a substrate is loaded directly on a holder during a substrate heat treatment process. That is, the substrate is heat-treated in a state of being in surface contact with the holder for supporting the substrate. As the size of the substrate increases due to the increase in the size of the substrate, heat loss to the holder occurs when the temperature of the process temperature increases, so that the temperature increase rate of the substrate becomes slow. There was a problem. In addition, the substrate slips on the holder, causing a back scratch on the substrate, and there is a problem found after the substrate processing step.

In addition, the conventional batch heat treatment apparatus requires a stage device that separates the holder from the substrate by unloading the holder together with the substrate after substrate processing as the substrate is transported in the state supported by the holder and loaded into the boat. There was a safety problem with the transfer.

The present invention has been made to solve the above-mentioned problems of the prior art, by applying a substrate support pin on the holder can increase the temperature increase rate during the heat treatment process after loading the substrate, the position arrangement of the free substrate support pin on the holder and The number of installations can be adjusted to eliminate back-scratching of the substrate to the holder, and the transfer of the substrate can be facilitated as the holder is fixed to the boat so that the transfer of the holder can be omitted. An object of the present invention is to provide a batch heat treatment apparatus for a large substrate which can be reduced.

According to an embodiment of the present invention, a batch heat treatment apparatus for a large substrate includes: a chamber 100 providing a space in which a substrate S is heat treated; A heater (110) installed in multiple layers in the chamber (100); A boat (120) installed inside the chamber (100) and having the substrate (S) stacked in multiple layers; A holder (H) installed in the boat 120 in a detachable manner in multiple layers and supporting the substrate (S); And a plurality of substrate supporters 131 provided on the holder H to support the substrate S.

The heater 110 may include a first heating rod 111 installed at a predetermined interval along the longitudinal direction of the substrate (S).

The heater 110 may further include a second heating rod 112 installed to cross the first heating rod 111 at both sides of the boat 120.

The boat 120 may be provided with a support protrusion 126 for supporting the holder (H).

The substrate support 131 may be arranged in a plurality of rows along the horizontal or vertical direction of the holder (H).

The substrate support 131 may include a pin 131 in contact with a bottom surface of the substrate S, and a body 133 coupled to the top of the pin 131 and fixed to the holder H. .

Insert holder 135 inserted into the body 133 may be fixed to the holder (H).

In the batch heat treatment apparatus for a large substrate according to the present invention as described above, the substrate supporting pin is provided on the holder in a state in which the holder is fixed to the boat, so that the substrate is separated from the holder during the heat treatment process after loading the substrate so that heat leaks to the holder. It is possible to block the and increase the temperature increase rate of the substrate, to freely arrange the substrate support pin on the holder so that the substrate is spaced apart from the holder, and to adjust the number of installation to eliminate the back scratch phenomenon of the substrate to the holder, As the holder is fixed to the boat and the transfer operation of the holder is omitted, the transfer weight of the substrate may be reduced, thereby facilitating the transfer operation of the substrate, and the transfer stability of the substrate may be improved and the transfer time may be reduced.

1 is a front view of a batch heat treatment apparatus for a large substrate according to an embodiment of the present invention.
FIG. 2 is an exploded perspective view of the boat and the holder of FIG. 1.
3 is a front view of Fig.
4 is an enlarged view of the boat and the support of FIG. 3.
5 is an enlarged view of the substrate support of FIG. 3.

DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several aspects, and length, area, thickness, and the like may be exaggerated for convenience.

Hereinafter, with reference to the accompanying drawings will be described in detail the configuration of the present invention.

The material of the substrate loaded in the batch heat treatment apparatus for a large substrate is not particularly limited, and substrates of various materials, such as glass, plastic, polymer, silicon wafer, and stainless steel, may be loaded. Hereinafter, a description will be given assuming a rectangular glass substrate that is most commonly used in the field of flat panel displays such as LCDs and OLEDs or thin film silicon solar cells.

Referring to FIG. 1, a batch heat treatment apparatus for a large substrate according to an exemplary embodiment may include a chamber 100 providing a space in which a substrate S is heat treated, and a heater 110 installed in multiple layers in the chamber 100. , The boat 120 is installed in the chamber 100 and the substrate S is stacked in multiple layers, the holder H is detachably installed in the boat 120 in multiple layers and supports the substrate S, and a holder. It may include a plurality of substrate support 131 provided on (H) to support the substrate (S).

The chamber 100 has a rectangular parallelepiped shape, and the material is preferably stainless steel, but is not necessarily limited thereto. Although not shown, a door may be installed at one side of the chamber 100 to open and close in a vertical direction to load the substrate S in the chamber 100. The substrate S may be loaded into the chamber 100 using a substrate loading device (not shown) such as a transfer arm while the door is opened. Meanwhile, after the heat treatment is completed, the substrate S may be unloaded from the chamber 100 through the door.

A cover (not shown) is installed on the upper side of the chamber 100 to repair and replace, for example, a boat 120, a gas supply pipe (not shown), and a gas discharge pipe (not shown) installed inside the chamber 100. It may be installed to open and close. The material of the cover is preferably quartz, but is not necessarily limited thereto.

Again, referring to FIG. 1, the heater 110 may include a first heating rod 111 installed at predetermined intervals along the length direction of the substrate S. Referring to FIG. The heater 110 may further include a second heating rod 112 installed to cross the first heating rod 111 at both sides of the boat 120. The first heating rod 111 directly heats the substrate S in the chamber 100, and the second heating rod 112 may prevent heat loss inside the chamber 100.

The first heating rod 111 and the second heating rod 112 are long rod-shaped heaters in which a heating element is inserted into the quartz tube, and generates heat by receiving external power through terminals installed at both ends. Can be. The plurality of first heating rods 111 and the second heating rods 112 are disposed at regular intervals along the stacking direction of the substrate S, and the substrate S is formed of a plurality of first heating rods 111. It may be disposed between the second heating rod (112).

As such, the first heating rod 111 may be installed in the chamber 100 to cover the entire area of the substrate S at the upper and lower portions of the substrate S, so that the substrate S may be the first heating rod 111. Heat may be uniformly received by supplying heat over the entire area. In addition, the second heating rod 112 is installed at the outside of the first heating rod 111 in the chamber 100, and heat transfer of the second heating rod 112 to the outside of the first heating rod 111 is performed. By doing so, the heat loss can be compensated for at the outside of the first heating rod 111.

The chamber 100 may have a cooling tube (not shown) for rapidly cooling the inside of the chamber 100 after the heat treatment is completed. Since the cooling tube is installed in the chamber 100, heat inside the chamber 100 may be transferred to the outside of the chamber 100 through the cooling tube to rapidly cool the inside of the chamber 100 after the heat treatment is finished. After the heat treatment is finished, the inside of the chamber 100 can be rapidly cooled by a cooling tube because the inside of the chamber 100 must be cooled below a predetermined temperature so that the unloading operation of the substrate S can proceed. And it can greatly improve the productivity of the solar cell.

1 to 3, the boat 120 includes a support 125 capable of supporting the holder H at both sides of the interior of the chamber 100. The support 125 is provided in multiple layers so that the holder H can be installed in multiple layers. The support part 125 may be provided with a support protrusion 126 for supporting the holder (H). The support protrusion 126 may reduce heat transfer between the holder H and the support protrusion 126 by reducing the contact area by supporting the holder H at regular intervals.

The holder H may be supported by the support protrusion 126 of the support part 125 disposed on both sides thereof and installed in the boat 120. Holder (H) must be installed in a multi-layer on the support 125 of the boat 120 before the substrate (S) is loaded in the chamber (100).

The substrate support 131 installed on the holder H to support the substrate S may be disposed in a plurality of rows along the horizontal or vertical direction of the holder H to uniformly support the substrate S as a whole. The arrangement of the substrate support 131 may be appropriately changed to match the area or shape of the substrate S. FIG.

Referring to FIG. 4, the substrate support 131 may include a pin 131 contacting the bottom surface of the substrate S, and a body 133 to which the pin 131 is coupled to the top and fixed to the holder H. Can be.

Referring to Figure 5, the holder (H) can be fixed to the insertion table 135 is inserted into the body 133. The substrate support 131 may be installed on the holder H by fixing the holder H to the insertion stand 135 and coupling the pin 131 to the holder H.

As such, in a state in which the holder H is supported by the boat 120 installed inside the chamber 100, the substrate S is loaded into the chamber 100 to be supported by the substrate support 131, and the holder Heat treatment may be performed in a state of being spaced apart from (H). The substrate S may be loaded into the chamber 100 by the number of holders H supported in accordance with the number of the support parts 125. Since the substrate S heat-treated in the chamber 100 is spaced apart from the holder H, the substrate S is immediately cooled and then transferred to a stage (not shown) disposed on one side of the chamber 100 by a robot arm. Can be stacked. The holder H may maintain the state fixed to the boat 120 and support another substrate S to be heat-treated later. When the substrate S is loaded into the chamber 100 or transferred to the stage after the heat treatment is performed, the transfer of the holder H may be omitted. In addition, since the heat treatment is performed in a state where the substrate S is spaced apart from the holder H by the substrate support 131, leakage of heat to the holder H may be blocked to reduce a temperature increase time of the substrate S. FIG.

The drawings of the embodiments of the present invention described above are omitted in detail, and are schematically illustrated so as to easily identify parts belonging to the technical idea of the present invention. It should be noted that the above-described embodiments are not intended to limit the technical spirit of the present invention and are merely a reference for understanding the technical scope of the present invention.

S: substrate
100: chamber
110: heater
111: first heating rod
112: second heating rod
120: boat
125: support
126: support protrusion
H: Holder
131: substrate support
132: pin
133: body
135: insertion table

Claims (7)

A chamber 100 providing a space in which the substrate S is heat treated;
A heater (110) installed in multiple layers in the chamber (100);
A boat (120) installed inside the chamber (100) and having the substrate (S) stacked in multiple layers;
A holder (H) installed in the boat 120 in a detachable manner in multiple layers and supporting the substrate (S); And
And a plurality of substrate supporters (131) provided on the holder (H) to support the substrate (S). The method of claim 1,
The heater 110 is a batch heat treatment apparatus for a large substrate, characterized in that it comprises a first heating rod (111) installed at a predetermined interval along the longitudinal direction of the substrate (S). The method of claim 2,
The heater 110 is a batch heat treatment apparatus for a large substrate, characterized in that further comprising a second heating rod (112) installed to cross the first heating rod (111) on both sides of the boat (120). The method of claim 1,
The boat (120) is a batch heat treatment apparatus for a large substrate, characterized in that the support protrusion (126) for supporting the holder (H) is provided. The method of claim 1,
The substrate support 131 is a batch heat treatment apparatus for a large substrate, characterized in that arranged in a plurality of rows along the horizontal or longitudinal direction of the holder (H). The method of claim 1,
The substrate support 131 includes a pin 131 contacting the bottom surface of the substrate S, and a body 133 coupled to the top of the pin 131 and fixed to the holder H. Batch-type heat processing apparatus for large board | substrates made into. The method of claim 6,
The holder (H) is a batch type heat treatment apparatus for a large substrate, characterized in that the insertion table 135 is inserted into the body 133 is fixed.
KR1020100082969A 2010-08-26 2010-08-26 Batch type heat treatment apparatus for large substrate KR20120019645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100082969A KR20120019645A (en) 2010-08-26 2010-08-26 Batch type heat treatment apparatus for large substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100082969A KR20120019645A (en) 2010-08-26 2010-08-26 Batch type heat treatment apparatus for large substrate

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR2020120004313U Division KR20120005313U (en) 2012-05-22 2012-05-22 Batch Type Heat Treatment Apparatus For Large Substrate

Publications (1)

Publication Number Publication Date
KR20120019645A true KR20120019645A (en) 2012-03-07

Family

ID=46128483

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100082969A KR20120019645A (en) 2010-08-26 2010-08-26 Batch type heat treatment apparatus for large substrate

Country Status (1)

Country Link
KR (1) KR20120019645A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101440955B1 (en) * 2013-06-04 2014-09-17 한화테크엠주식회사 Apparatus for heat processing of substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101440955B1 (en) * 2013-06-04 2014-09-17 한화테크엠주식회사 Apparatus for heat processing of substrate

Similar Documents

Publication Publication Date Title
KR101016048B1 (en) Batch Type Heat Treatment Apparatus
KR101157192B1 (en) Batch type appartus for processing a substrate
KR101199954B1 (en) Boat For Processing A Substrate
KR20100128854A (en) Batch type substrate treatment apparatus
KR101016061B1 (en) Heater For Heat Treatment Apparatus
KR101016027B1 (en) Boat
TW201222622A (en) Apparatus for processing a substrate
KR20120019645A (en) Batch type heat treatment apparatus for large substrate
KR20120005313U (en) Batch Type Heat Treatment Apparatus For Large Substrate
KR101354600B1 (en) Improved boat, and heat treatment chamber and apparatus of substrate having the same
JP5602157B2 (en) Batch type substrate processing equipment
KR101167989B1 (en) Appartus for processing a substrate
KR101235342B1 (en) Method for transfering a substrate
KR101464662B1 (en) Improved Boat, and Heat Treatment Chamber and Apparatus of Substrate Having the Same
KR100951688B1 (en) Heat Treatment Apparatus
KR101235334B1 (en) Apparatus for transfering a substrate
KR101009989B1 (en) Substrate Holder
KR101016058B1 (en) Heater For Heat Treatment Apparatus
JP2007227773A (en) Heat treatment apparatus of substrate, and heat treatment method of substrate
KR101593493B1 (en) Themal processing apparatus of large area glass substrate
KR101199939B1 (en) Apparatus For Processing A Substrate
KR20110021571A (en) Boat
KR200459210Y1 (en) Chamber For Batch Type Substrate Treatment Apparatus
KR20110009358A (en) Boat
KR102166492B1 (en) Apparatus for heat processing

Legal Events

Date Code Title Description
A201 Request for examination
WICV Withdrawal of application forming a basis of a converted application