JP4361568B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

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Publication number
JP4361568B2
JP4361568B2 JP2007008306A JP2007008306A JP4361568B2 JP 4361568 B2 JP4361568 B2 JP 4361568B2 JP 2007008306 A JP2007008306 A JP 2007008306A JP 2007008306 A JP2007008306 A JP 2007008306A JP 4361568 B2 JP4361568 B2 JP 4361568B2
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Japan
Prior art keywords
conductive layer
substrate
substrate processing
film
insulating substrate
Prior art date
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Expired - Fee Related
Application number
JP2007008306A
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English (en)
Japanese (ja)
Other versions
JP2008177289A5 (ko
JP2008177289A (ja
Inventor
卓也 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007008306A priority Critical patent/JP4361568B2/ja
Priority to TW097100472A priority patent/TW200849455A/zh
Priority to KR1020080003358A priority patent/KR100967923B1/ko
Priority to CN2008100023991A priority patent/CN101226877B/zh
Publication of JP2008177289A publication Critical patent/JP2008177289A/ja
Publication of JP2008177289A5 publication Critical patent/JP2008177289A5/ja
Application granted granted Critical
Publication of JP4361568B2 publication Critical patent/JP4361568B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007008306A 2007-01-17 2007-01-17 基板処理装置および基板処理方法 Expired - Fee Related JP4361568B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法
TW097100472A TW200849455A (en) 2007-01-17 2008-01-04 Apparatus and method for processing substrate
KR1020080003358A KR100967923B1 (ko) 2007-01-17 2008-01-11 기판 처리 장치 및 기판 처리 방법
CN2008100023991A CN101226877B (zh) 2007-01-17 2008-01-17 基板处理装置及基板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Publications (3)

Publication Number Publication Date
JP2008177289A JP2008177289A (ja) 2008-07-31
JP2008177289A5 JP2008177289A5 (ko) 2008-10-02
JP4361568B2 true JP4361568B2 (ja) 2009-11-11

Family

ID=39704110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007008306A Expired - Fee Related JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Country Status (4)

Country Link
JP (1) JP4361568B2 (ko)
KR (1) KR100967923B1 (ko)
CN (1) CN101226877B (ko)
TW (1) TW200849455A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988667B1 (ko) 2009-01-23 2010-10-18 장석호 발전 효율과 회전력 향상이 이루어진 발전장치
US20110217486A1 (en) * 2010-02-23 2011-09-08 Teoss Co., Ltd. Method for processing a chemical vapor deposition (cvd) and a cvd device using the same
JP5902073B2 (ja) * 2012-09-25 2016-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
CN107217240A (zh) * 2017-07-11 2017-09-29 江苏星特亮科技有限公司 一种石墨烯薄膜的制备方法
CN109402575A (zh) * 2018-12-27 2019-03-01 北京铂阳顶荣光伏科技有限公司 基座以及蒸镀设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP4433858B2 (ja) * 2004-03-31 2010-03-17 パナソニック電工株式会社 電子源装置

Also Published As

Publication number Publication date
CN101226877A (zh) 2008-07-23
JP2008177289A (ja) 2008-07-31
KR20080067965A (ko) 2008-07-22
CN101226877B (zh) 2010-12-01
KR100967923B1 (ko) 2010-07-06
TW200849455A (en) 2008-12-16
TWI353649B (ko) 2011-12-01

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