JP4361568B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

Info

Publication number
JP4361568B2
JP4361568B2 JP2007008306A JP2007008306A JP4361568B2 JP 4361568 B2 JP4361568 B2 JP 4361568B2 JP 2007008306 A JP2007008306 A JP 2007008306A JP 2007008306 A JP2007008306 A JP 2007008306A JP 4361568 B2 JP4361568 B2 JP 4361568B2
Authority
JP
Japan
Prior art keywords
conductive layer
substrate
substrate processing
film
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007008306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008177289A (ja
JP2008177289A5 (ko
Inventor
卓也 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007008306A priority Critical patent/JP4361568B2/ja
Priority to TW097100472A priority patent/TW200849455A/zh
Priority to KR1020080003358A priority patent/KR100967923B1/ko
Priority to CN2008100023991A priority patent/CN101226877B/zh
Publication of JP2008177289A publication Critical patent/JP2008177289A/ja
Publication of JP2008177289A5 publication Critical patent/JP2008177289A5/ja
Application granted granted Critical
Publication of JP4361568B2 publication Critical patent/JP4361568B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007008306A 2007-01-17 2007-01-17 基板処理装置および基板処理方法 Expired - Fee Related JP4361568B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法
TW097100472A TW200849455A (en) 2007-01-17 2008-01-04 Apparatus and method for processing substrate
KR1020080003358A KR100967923B1 (ko) 2007-01-17 2008-01-11 기판 처리 장치 및 기판 처리 방법
CN2008100023991A CN101226877B (zh) 2007-01-17 2008-01-17 基板处理装置及基板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Publications (3)

Publication Number Publication Date
JP2008177289A JP2008177289A (ja) 2008-07-31
JP2008177289A5 JP2008177289A5 (ko) 2008-10-02
JP4361568B2 true JP4361568B2 (ja) 2009-11-11

Family

ID=39704110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007008306A Expired - Fee Related JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Country Status (4)

Country Link
JP (1) JP4361568B2 (ko)
KR (1) KR100967923B1 (ko)
CN (1) CN101226877B (ko)
TW (1) TW200849455A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988667B1 (ko) 2009-01-23 2010-10-18 장석호 발전 효율과 회전력 향상이 이루어진 발전장치
JP4681084B1 (ja) * 2010-02-23 2011-05-11 株式会社テオス Ｃｖｄ処理方法およびその方法を使用するｃｖｄ装置
JP5902073B2 (ja) * 2012-09-25 2016-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
CN107217240A (zh) * 2017-07-11 2017-09-29 江苏星特亮科技有限公司 一种石墨烯薄膜的制备方法
CN109402575A (zh) * 2018-12-27 2019-03-01 北京铂阳顶荣光伏科技有限公司 基座以及蒸镀设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP4433858B2 (ja) * 2004-03-31 2010-03-17 パナソニック電工株式会社 電子源装置

Also Published As

Publication number Publication date
JP2008177289A (ja) 2008-07-31
CN101226877A (zh) 2008-07-23
KR100967923B1 (ko) 2010-07-06
TWI353649B (ko) 2011-12-01
TW200849455A (en) 2008-12-16
KR20080067965A (ko) 2008-07-22
CN101226877B (zh) 2010-12-01

Similar Documents

Publication Publication Date Title
KR101103453B1 (ko) 가열 장치 및 이의 제조 방법
JP4361568B2 (ja) 基板処理装置および基板処理方法
CN102898037B (zh) 沉积薄层的方法和获得的产品
JP5236405B2 (ja) 透明電極膜の改質方法及び透明電極膜付基板の製造方法
TWI362704B (en) Method for annealing silicon thin films using conductive layer and polycrystalline silicon thin films prepared therefrom
TW200816362A (en) Heating and cooling of substrate support
WO2013002983A1 (en) Techniques for manufacturing planar patterned transparent contact and/or electronic devices including same
CN101395706A (zh) 利用焦耳加热晶化非晶硅的方法
JP4110752B2 (ja) 基材上に設けた透明導電膜を低抵抗化する方法。
Liao et al. Oxygen-deficient indium tin oxide thin films annealed by atmospheric pressure plasma jets with/without air-quenching
US7253037B2 (en) Method of fabricating thin film transistor
JP2003247062A (ja) 薄膜形成方法及びその装置
KR20170123111A (ko) 줄열 가열 방식을 사용한 그래핀층의 제조 방법
KR20200037547A (ko) 금속나노입자가 전사된 투명 면상 발열필름 및 이의 제조방법
TWI492305B (zh) 製造半導體裝置之方法及設備
Choe et al. Influence of Ag interlayer thickness on the optical, electrical and mechanical properties of Ti-doped In 2 O 3/Ag/Ti-doped In 2 O 3 multilayer flexible transparent conductive electrode
JP2017193755A (ja) 透明導電膜の製造方法、及び透明導電膜
JP2778598B2 (ja) 加熱方法及び加熱装置
JP2011192908A (ja) ポリシリコン膜の製造方法、太陽電池及び電子デバイス
JP2016527688A (ja) 銀をディウェッティングさせることによるゲート電極の製造
JP2011029148A (ja) 導電性金属酸化物の後処理方法及び成膜兼後処理装置
TWI619847B (zh) 銀線路的黑化方法及顯示裝置
JP2011187336A (ja) 透明導電膜の改質方法及び透明導電膜付基板の製造方法
JP5885151B2 (ja) 導電性積層体及びその製造方法
KR101293212B1 (ko) ＭｏＳｉ２ 발열체 제조방법 및 이에 의해 제조된 ＭｏＳｉ２ 발열체를 포함하는 노

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080815

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080815

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090203

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090403

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090811

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090812

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120821

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150821

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees