TWI351414B - - Google Patents

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Publication number
TWI351414B
TWI351414B TW096112933A TW96112933A TWI351414B TW I351414 B TWI351414 B TW I351414B TW 096112933 A TW096112933 A TW 096112933A TW 96112933 A TW96112933 A TW 96112933A TW I351414 B TWI351414 B TW I351414B
Authority
TW
Taiwan
Prior art keywords
resin composition
semiconductor wafer
bis
substrate
sup
Prior art date
Application number
TW096112933A
Other languages
English (en)
Chinese (zh)
Other versions
TW200804463A (en
Inventor
Osamu Matsuzaka
Rieko Hayashi
Takenori Ookubo
Tomohiro Hirata
Katsuhiko Yasu
Original Assignee
Hitachi Chemical Co Ltd
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Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200804463A publication Critical patent/TW200804463A/zh
Application granted granted Critical
Publication of TWI351414B publication Critical patent/TWI351414B/zh

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    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/12—Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Sealing Material Composition (AREA)
  • Wire Bonding (AREA)
TW096112933A 2006-04-12 2007-04-12 Resin composition for encapsulating filler, method of flip chip mounting with the same, and product of flip chip mounting TW200804463A (en)

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PCT/JP2007/057789 WO2007116979A1 (ja) 2006-04-12 2007-04-06 封止充填剤用樹脂組成物、それを用いたフリップチップ実装法及びフリップチップ実装品

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JP2009049115A (ja) * 2007-08-17 2009-03-05 Seiko Epson Corp 半導体装置及びその製造方法
JP5748937B2 (ja) * 2008-04-01 2015-07-15 日立化成株式会社 半導体封止用フィルム状接着剤及び半導体装置の製造方法
JP2010006983A (ja) * 2008-06-27 2010-01-14 Hitachi Chem Co Ltd 封止充填剤及び半導体装置
JP5879971B2 (ja) * 2011-11-28 2016-03-08 宇部興産株式会社 ポリイミド溶液組成物
JP2013155329A (ja) * 2012-01-31 2013-08-15 T & K Toka Co Ltd 溶剤可溶性ポリイミド樹脂及びその製造方法、並びに前記ポリイミド樹脂を含有するポリイミド組成物、ポリイミドフィルム、及びコーティング物品
GB201215100D0 (en) * 2012-08-24 2012-10-10 Croda Int Plc Polymide composition
JP5902139B2 (ja) * 2013-11-01 2016-04-13 新日鉄住金化学株式会社 ポリイミド樹脂組成物
JP6262691B2 (ja) * 2015-07-08 2018-01-17 新日鉄住金化学株式会社 溶剤可溶性ポリイミド樹脂
JP6031563B2 (ja) * 2015-07-08 2016-11-24 新日鉄住金化学株式会社 接着剤用ポリイミド樹脂
JP6284247B2 (ja) * 2016-09-21 2018-02-28 新日鉄住金化学株式会社 溶剤可溶性ポリイミド樹脂
JP2017133001A (ja) * 2017-01-20 2017-08-03 新日鉄住金化学株式会社 接着剤用原料ポリイミド樹脂、カバーレイフィルム及びボンディングシート
JP6527893B2 (ja) * 2017-01-20 2019-06-05 日鉄ケミカル＆マテリアル株式会社 ボンディングシート用原料ポリイミド樹脂及びボンディングシート
JP7079227B2 (ja) * 2019-08-08 2022-06-01 日鉄ケミカル＆マテリアル株式会社 溶剤可溶性ポリイミド樹脂の製造方法

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JPH08283692A (ja) * 1995-04-17 1996-10-29 Kanegafuchi Chem Ind Co Ltd 電子モジュール
JP2000026602A (ja) * 1998-07-07 2000-01-25 Nitto Denko Corp 熱融着性ポリイミド樹脂フィルムおよびこれを用いた半導体装置ならびに多層配線板
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JP4356183B2 (ja) 2000-03-27 2009-11-04 住友ベークライト株式会社 半田接合用レジスト、半導体パッケージ及びその製造方法
JP3812800B2 (ja) * 2000-03-30 2006-08-23 Ｔｄｋ株式会社 封止材料、はんだ付け用フラックス、はんだぺ一スト、電子部品装置、電子回路モジュール及び電子回路装置
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JP3845632B2 (ja) * 2003-12-15 2006-11-15 Ｔｄｋ株式会社 電子部品およびその製造方法
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WO2007116979A1 (ja) 2007-10-18

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