TWI346995B - Semiconductor device and method for producing the same - Google Patents

Semiconductor device and method for producing the same

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Publication number
TWI346995B
TWI346995B TW094102258A TW94102258A TWI346995B TW I346995 B TWI346995 B TW I346995B TW 094102258 A TW094102258 A TW 094102258A TW 94102258 A TW94102258 A TW 94102258A TW I346995 B TWI346995 B TW I346995B
Authority
TW
Taiwan
Prior art keywords
producing
same
semiconductor device
semiconductor
Prior art date
Application number
TW094102258A
Other languages
English (en)
Other versions
TW200531228A (en
Inventor
Koujiro Kameyama
Akira Suzuki
Yoshio Okayama
Original Assignee
Sanyo Electric Co
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Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200531228A publication Critical patent/TW200531228A/zh
Application granted granted Critical
Publication of TWI346995B publication Critical patent/TWI346995B/zh

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    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B62LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62BHAND-PROPELLED VEHICLES, e.g. HAND CARTS OR PERAMBULATORS; SLEDGES
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Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI272683B (en) * 2004-05-24 2007-02-01 Sanyo Electric Co Semiconductor device and manufacturing method thereof
JP3988777B2 (ja) * 2005-07-29 2007-10-10 オムロン株式会社 表面実装用の半導体パッケージおよびその製造方法
US7795137B2 (en) * 2005-08-26 2010-09-14 Hitachi, Ltd. Manufacturing method of semiconductor device
JP4745007B2 (ja) * 2005-09-29 2011-08-10 三洋電機株式会社 半導体装置及びその製造方法
JP2007273941A (ja) * 2006-03-07 2007-10-18 Sanyo Semiconductor Co Ltd 半導体装置の製造方法
JP2007317839A (ja) * 2006-05-25 2007-12-06 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP5143382B2 (ja) 2006-07-27 2013-02-13 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
US8101464B2 (en) 2006-08-30 2012-01-24 Micron Technology, Inc. Microelectronic devices and methods for manufacturing microelectronic devices
JP4773307B2 (ja) 2006-09-15 2011-09-14 Okiセミコンダクタ株式会社 半導体装置の製造方法
US20080136012A1 (en) * 2006-12-08 2008-06-12 Advanced Chip Engineering Technology Inc. Imagine sensor package and forming method of the same
TWI341584B (en) * 2007-02-26 2011-05-01 Siliconware Precision Industries Co Ltd Sensor-type semiconductor package and manufacturing method thereof
US7595220B2 (en) * 2007-06-29 2009-09-29 Visera Technologies Company Limited Image sensor package and fabrication method thereof
JP2009021462A (ja) * 2007-07-13 2009-01-29 Disco Abrasive Syst Ltd ウェーハの加工方法
TWI353667B (en) * 2007-07-13 2011-12-01 Xintec Inc Image sensor package and fabrication method thereo
DE102007035902A1 (de) * 2007-07-31 2009-02-05 Siemens Ag Verfahren zum Herstellen eines elektronischen Bausteins und elektronischer Baustein
US8928121B2 (en) * 2007-11-12 2015-01-06 Nxp B.V. Thermal stress reduction
JP4939452B2 (ja) * 2008-02-07 2012-05-23 ラピスセミコンダクタ株式会社 半導体装置の製造方法
US8072079B2 (en) * 2008-03-27 2011-12-06 Stats Chippac, Ltd. Through hole vias at saw streets including protrusions or recesses for interconnection
JP5271610B2 (ja) * 2008-06-12 2013-08-21 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP5455538B2 (ja) * 2008-10-21 2014-03-26 キヤノン株式会社 半導体装置及びその製造方法
JP2010103300A (ja) * 2008-10-23 2010-05-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
TWI388038B (zh) * 2009-07-23 2013-03-01 Ind Tech Res Inst 感測元件結構與製造方法
WO2011033516A1 (en) * 2009-09-20 2011-03-24 Viagan Ltd. Wafer level packaging of electronic devices
US9502612B2 (en) 2009-09-20 2016-11-22 Viagan Ltd. Light emitting diode package with enhanced heat conduction
US8697574B2 (en) 2009-09-25 2014-04-15 Infineon Technologies Ag Through substrate features in semiconductor substrates
EP2306506B1 (en) 2009-10-01 2013-07-31 ams AG Method of producing a semiconductor device having a through-wafer interconnect
JP5532867B2 (ja) * 2009-11-30 2014-06-25 ソニー株式会社 固体撮像装置及びその製造方法、並びに固体撮像素子の製造方法及び半導体装置
CN102088012B (zh) * 2009-12-07 2013-04-17 精材科技股份有限公司 电子元件封装体及其制造方法
US8471289B2 (en) * 2009-12-28 2013-06-25 Sanyo Electric Co., Ltd. Semiconductor laser device, optical pickup device and semiconductor device
CN102782862B (zh) * 2010-02-26 2015-08-26 精材科技股份有限公司 芯片封装体及其制造方法
KR20110134703A (ko) 2010-06-09 2011-12-15 삼성전자주식회사 반도체 패키지의 제조 방법
JP2010245571A (ja) * 2010-07-23 2010-10-28 Oki Semiconductor Co Ltd 半導体装置の製造方法
KR101712630B1 (ko) 2010-12-20 2017-03-07 삼성전자 주식회사 반도체 소자의 형성 방법
CN102592982B (zh) * 2011-01-17 2017-05-03 精材科技股份有限公司 晶片封装体的形成方法
CN102683538B (zh) 2011-03-06 2016-06-08 维亚甘有限公司 发光二极管封装和制造方法
US8987855B2 (en) 2011-08-04 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structures formed in double openings in dielectric layers
US8629043B2 (en) * 2011-11-16 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for de-bonding carriers
EP2693467B1 (en) 2012-08-01 2015-11-18 ams AG A method of producing a semiconductor device having an interconnect through the substrate
CN102810549B (zh) * 2012-08-29 2015-04-01 格科微电子(上海)有限公司 图像传感器的晶圆级封装的制作方法
US9123732B2 (en) * 2012-09-28 2015-09-01 Intel Corporation Die warpage control for thin die assembly
US20140151095A1 (en) * 2012-12-05 2014-06-05 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method for manufacturing the same
TWI487440B (zh) * 2013-02-05 2015-06-01 Nan Ya Printed Circuit Board 印刷電路板及其製作方法
KR20140104778A (ko) 2013-02-21 2014-08-29 삼성전자주식회사 관통전극을 갖는 반도체 소자의 제조방법
TWI633640B (zh) * 2013-12-16 2018-08-21 新力股份有限公司 Semiconductor element, method of manufacturing semiconductor element, and electronic device
US9431350B2 (en) * 2014-03-20 2016-08-30 United Microelectronics Corp. Crack-stopping structure and method for forming the same
US9548248B2 (en) * 2014-08-07 2017-01-17 Infineon Technologies Ag Method of processing a substrate and a method of processing a wafer
US9478453B2 (en) 2014-09-17 2016-10-25 International Business Machines Corporation Sacrificial carrier dicing of semiconductor wafers
CN104392958A (zh) * 2014-11-23 2015-03-04 北京工业大学 晶圆级含硅通孔的半导体封装方法
CN104393009B (zh) * 2014-11-23 2017-02-01 北京工业大学 包含硅通孔的高可靠性影像传感器封装
CN104465581A (zh) * 2014-11-23 2015-03-25 北京工业大学 一种低成本高可靠性芯片尺寸cis封装
KR101637186B1 (ko) * 2014-11-24 2016-07-07 주식회사 에스에프에이반도체 관통 실리콘 비아 웨이퍼의 집적회로 분단 방법
JP6843570B2 (ja) * 2016-09-28 2021-03-17 キヤノン株式会社 半導体装置の製造方法
CN108878461A (zh) * 2017-05-08 2018-11-23 中芯国际集成电路制造(上海)有限公司 半导体器件及其制造方法
CN108269812B (zh) * 2017-12-20 2019-02-15 武汉新芯集成电路制造有限公司 一种优化的芯片级封装工艺方法
FR3104317A1 (fr) 2019-12-04 2021-06-11 Stmicroelectronics (Tours) Sas Procédé de fabrication de puces électroniques
KR102550142B1 (ko) * 2021-07-23 2023-07-03 네패스 하임 반도체 패키지
KR102550141B1 (ko) * 2021-07-19 2023-07-03 네패스 하임 반도체 패키지

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0215652A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
DE4314907C1 (de) * 1993-05-05 1994-08-25 Siemens Ag Verfahren zur Herstellung von vertikal miteinander elektrisch leitend kontaktierten Halbleiterbauelementen
DE4433845A1 (de) 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US5851928A (en) * 1995-11-27 1998-12-22 Motorola, Inc. Method of etching a semiconductor substrate
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
KR100298827B1 (ko) * 1999-07-09 2001-11-01 윤종용 재배선 기판을 사용한 웨이퍼 레벨 칩 스케일 패키지 제조방법
JP2001176898A (ja) 1999-12-20 2001-06-29 Mitsui High Tec Inc 半導体パッケージの製造方法
JP2002025948A (ja) 2000-07-10 2002-01-25 Canon Inc ウエハーの分割方法、半導体デバイス、および半導体デバイスの製造方法
JP2002094082A (ja) * 2000-07-11 2002-03-29 Seiko Epson Corp 光素子及びその製造方法並びに電子機器
US6379982B1 (en) * 2000-08-17 2002-04-30 Micron Technology, Inc. Wafer on wafer packaging and method of fabrication for full-wafer burn-in and testing
US6406934B1 (en) * 2000-09-05 2002-06-18 Amkor Technology, Inc. Wafer level production of chip size semiconductor packages
JP2002100709A (ja) 2000-09-21 2002-04-05 Hitachi Ltd 半導体装置及びその製造方法
JP4183375B2 (ja) * 2000-10-04 2008-11-19 沖電気工業株式会社 半導体装置及びその製造方法
US6630725B1 (en) * 2000-10-06 2003-10-07 Motorola, Inc. Electronic component and method of manufacture
US6693358B2 (en) * 2000-10-23 2004-02-17 Matsushita Electric Industrial Co., Ltd. Semiconductor chip, wiring board and manufacturing process thereof as well as semiconductor device
JP2002373957A (ja) * 2001-06-14 2002-12-26 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
EP2287916A3 (de) 2001-08-24 2012-01-25 Schott AG Verfahren zum Kontaktieren und Gehäusen von integrierten Schaltungen
US6697013B2 (en) 2001-12-06 2004-02-24 Atheros Communications, Inc. Radar detection and dynamic frequency selection for wireless local area networks
CN1215541C (zh) 2002-03-20 2005-08-17 育霈科技股份有限公司 一种晶片型态封装及其制作方法
TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
JP4401330B2 (ja) 2002-04-23 2010-01-20 三洋電機株式会社 半導体装置及びその製造方法
TWI229435B (en) 2002-06-18 2005-03-11 Sanyo Electric Co Manufacture of semiconductor device
TWI227050B (en) * 2002-10-11 2005-01-21 Sanyo Electric Co Semiconductor device and method for manufacturing the same
JP4130158B2 (ja) * 2003-06-09 2008-08-06 三洋電機株式会社 半導体装置の製造方法、半導体装置

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