TWI345815B - - Google Patents

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Publication number
TWI345815B
TWI345815B TW096101555A TW96101555A TWI345815B TW I345815 B TWI345815 B TW I345815B TW 096101555 A TW096101555 A TW 096101555A TW 96101555 A TW96101555 A TW 96101555A TW I345815 B TWI345815 B TW I345815B
Authority
TW
Taiwan
Prior art keywords
epoxy resin
agent
group
circuit substrate
solution
Prior art date
Application number
TW096101555A
Other languages
English (en)
Other versions
TW200733260A (en
Inventor
Akihiro Aiba
Hisashi Nakamura
Tomoharu Mimura
Katsuyuki Tsuchida
Original Assignee
Nippon Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co filed Critical Nippon Mining Co
Publication of TW200733260A publication Critical patent/TW200733260A/zh
Application granted granted Critical
Publication of TWI345815B publication Critical patent/TWI345815B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/12—Materials for stopping leaks, e.g. in radiators, in tanks
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D233/00—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings
    • C07D233/54—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members
    • C07D233/56—Heterocyclic compounds containing 1,3-diazole or hydrogenated 1,3-diazole rings, not condensed with other rings having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, attached to ring carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D249/00—Heterocyclic compounds containing five-membered rings having three nitrogen atoms as the only ring hetero atoms
    • C07D249/02—Heterocyclic compounds containing five-membered rings having three nitrogen atoms as the only ring hetero atoms not condensed with other rings
    • C07D249/04—1,2,3-Triazoles; Hydrogenated 1,2,3-triazoles
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D257/00—Heterocyclic compounds containing rings having four nitrogen atoms as the only ring hetero atoms
    • C07D257/02—Heterocyclic compounds containing rings having four nitrogen atoms as the only ring hetero atoms not condensed with other rings
    • C07D257/04—Five-membered rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

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1345815 九、發明說明： 【發明所屬之技術領域】 本發明是有關一種藉由環氧樹脂將導線架(L _ 二_)或印刷電路板等半導體電路基材與ic㉟片予 著固定之黏晶步驟中之環氧樹脂滲出防止劑及防止參出方 法。 【先前技術】 在藉由環氧樹脂將導線架（Lead Frame)或印 中半導，電路基材與IC晶片予以接著以之黏晶步驟 面（通常實施有金、銀、銅、免等之電鍍）之 表面粗链度（surface rough職）過大，表面一經 劑、封孔處理財有機物污㈣， ，或添加劑渗出(環氧樹脂參出)之現二= =吏ΓΓ度下降，也會成為後續的線接合步驟變成 •:接著面之Γ主’為了防止如此之環氧樹脂的滲出，而 …接者面之表面粗糙度，或抑制 面除去污染物。然而m夕再絲 強戶^且八… 接者面之表面粗糙度’會影響黏晶 ς，且:機(assembly machine)之影像辨識能力 =問::清洗表面會有損及變色防止處理或封孔處理 而在=決專利文獻1中載有將基㈣ 不將變色防!基材面之表面粗縫度，還有 覆膜或封减㈣覆料洗娜，又，因 318904 5 1345815 為所吸附之有機被覆膜極薄，所以對於線接合性、模塑性 .· (Molding)等之組裝特性不會帶來不良效果，而可防止環氧 樹脂摩出。 ，然而，隨著最近半導體元件的大型化或半導體封裳之 薄里化$ 了改善趣曲之問題等，低應力、低彈性、低枯 度之黏晶樹脂（以下，稱為低應力型之黏晶樹脂）之使用越 來越增加，然此等樹脂多含有易滲出成分之情形，結果， 鲁=環氧樹脂變得容㈣生滲出。在上述專利文獻！之技 :在使用低應力型之黏晶樹脂時，因無法進行因應而 ^生=氧樹脂的參出。因此，在低應力型之黏晶樹脂方面， 亦/月王迠開發出因應之環氧樹脂滲出防止劑。 r專利文獻1 :曰本特開平11-195662號公報。 【發明内容】 (發明所要解決之課題） ·$藉二!目的係提供一種環氧樹脂滲出防止劑，其係 脂將導線架或印刷電路板等半導體電路基材 力型之曰曰黏曰樹=者固定之黏晶步驟中，即使使用上述低應 影塑，亦不會對黏晶強度或組裝特性有壞的 止發生環氧樹脂的滲出。 -理效果，而可防 (解決課題之手段） 本發明人等經專心研究之結 樹脂滲出阶七現猎由在含有環氧 /出防止劑之溶液中浸潰基材， 有機被覆膜，從而防止環氧樹脂滲出之；：面吸附 /贝 < 步驟，即使對於比 318904 6 以往更低應力型之黏晶樹脂亦有防止滲出效果的一群有機 化。物。亦即，藉由上述文獻記载之羧酸、硫醇化合物等 發現環氧樹脂滲出防止效果高的化合物遂而完成本發明。 本發明係如以下所述。 (1)種％氧樹脂滲出防止劑，使用於黏晶步驟，其特徵 為3有具碳原子數3個以上24個以下之氟烴基 CxHyFz- (x=3 至 24、y=〇 至 48、ζ=ι 至 49、y+z$ 2州） 與極性基R—之含氟有機化合物。 2)如刖述⑴之環氧樹脂滲出防止劑，其中，極性基R一 為:有硫⑻、氮(N)、磷(p)、氧（〇)中任一種之極性基。 (3)如述（2)之環氧樹脂渗出防止劑，其中，極性基& — 二气瓜基胺基、含氮雜環基、填酸醋基、幾基中之 (4) 之環氧樹脂滲出防止劑，其中，含氮雜環基 钰Ί 土、二唑基、四唑基、以及此等之衍生物中之 任一種。 (5) 如前述（1)至（4)巾 中，含有變2止二環氧樹脂渗出防止劑，其 巴防止劑或封孔處理劑。 (6) 如前述（5)之環氧 為含有含氮雜：:合渗:防止劑’其中’變色防止劑 ()如則述(6)之％氧樹脂參出防止劑，其中 化合物為味唾衍生乳雜衣狀 唑衍生物中之任一種。何生物、四唾衍生物、嗟 (8) —種環氧樹脂滲 '，其特徵為：將電路基材 318904 7 l345815 浸潰在含有前述⑴至⑺項 滲出防止劑之溶液中，或β人項所述之環氧樹脂 止劑之溶液散布、塗布到;環氧樹脂滲出防 )種電路基材，其特徵為： 有前述⑴至⑺射任4基材浸潰在含 溶液中’或是將含有該環氧旨參出防止劑之 布、塗布到電路基材上而進行;；【：止劑之溶液散 理者。 了衣氧hf脂滲出防止處 (10) -種電路基材，其特徵為 ⑴至⑺項t任—項^ f路基#表面吸附前述 m、%氧樹財出防止剩。 ()種半導體封裝件，盆特 電路基材。 ^ Μ為·使用前述⑼或⑽之 (發明效果） 使用本發明之環氧樹脂渗出防止劑而使導線 電路板等半導體電路其## ' β右心卜从 吸附環氧樹脂滲出防止機能 進行環氧樹脂渗出防止處理，藉此，即使 …力i之黏晶樹脂，亦不會損及變色防止效果或封孔 處理效果，在#晶步驟中即可防止環氧樹脂的渗出。又， 對於線接合特性或模塑特性（Molding)等之組合特性亦不 會帶來不良效果。 【實施方式】 - 本發明之％氧樹脂滲出防止劑包含具有碳原子數3個 乂上24個以下之氟垣基CxHyFz — (χ=3至、尸〇至“、 z 1至49、y+z$2x+i)與極性基R_之含氟有機化合物。 318904 =述氟煙基可列舉如氟燒基、含雙鍵之氣婦基、含3 鍵之氟炔基等，以敦院基為較佳。又，此等之氣煙基，只 要是氟烴基之總碳原子數為3個至24個者即可，可為直鍵 狀者，亦可具有支鏈。氟烴基之碳數乂為3至24，而以5 至12為特佳。妷數太少時環氧樹脂滲出防止效果低，而太 夕時，鑄_性（鑄模樹脂之密著性）降低。又，m越多 則％氧樹脂⑨出防止效果越冑，而在碳數較多之長分子 時’由於氟數過多時亦會有導致鑄模性降低之情形，所以 氟數z以11至25為宜。 前述氣煙基，宜使用 F(CF2)6—、F(CF2h_、f(CF2)iq F(CF2)6(CH2)2- > F(CF2)8(CH2)2- . F(CF2)10(CH2)2-等。 又，前述極性基R—，係含有硫（S)、氮（N)、磷（p)、 氧（Ο)中任一種之極性基，例如，可以使用氫硫基、胺基、 含氮雜環基、磷酸酯基、羧基中之任一種，而含氮雜環基， #彳如，可以使用咪唑基、三唑基、四唑基、以及此等之衍 生物。 刖述極性基為磷酸酯基之情形，可以使用單酯（— ορ(ο)(οη)2)、雙酿（(一 0)2Ρ(0)(0Η))、三醋（（_ 0)3Ρ(0))。 關於乃含氮雜環基之咪唑基、三唑基、四唑基，雖存 在有異構體，但在本發明中，亦可使用異構體之任一者， 又，混合物亦無妨。在合成之情形，以含氮環狀化合物之 氮直接與氟烴基鍵結者為易於取得，而可適用。又，咪唑 基、二唑基、四唑基之衍生物方面，可列舉如具有烷基或 318904 9 130815 苯基作為取代基之者等。 因此，本發明之環氧樹腊渗出防止劑，較佳的含 機化合物係將前述氧煙基CxHyFz—以a_表示時，例如可 :::A-SH、a_NH2、A_〇p(〇)(〇H)2、(a_ (A 叫 P(Q)、A•⑽h、a_n2c3H3(1•㈣）、A_N3C2H2l2)3 三唑-1-基）、A-N4CH(1-四唑）等。 （，， =發：之環氧樹脂滲出防止劑溶解在水、有 忖以❹作為環氧樹脂滲出防止劑溶液。前述防止 诏洛液中之上述有機化合物 較佳是Η)啦至10g/L。的，辰度疋〇.lmg/U1〇_， :上述有機化合物之濃度過低，則無環氧 止效果，又即使濃度過高， 冷出防. 有更佳之效果，故不佳。4果已達飽和’而無法期待 則因=1水料㈣，在上述有機化合物難溶於水時， 則因應必要而添加醇、酮等有機溶劑。所添加之量雖^ 參上述有機化合物能溶於水所必要之濃度即可/常為、 ’較佳為lg/“50g/L，如-= =性低’又過多時，上述有機化合物之溶解效果不僅1 有改=且使上述有機化合物H變得過稀，故不佳Γ U "上述有機化合物難溶於水時’可因應必要而添 加…/L至1〇g/L(較佳為…g/LiLig/L)之陰離4 陽離子系、非離子系界面活 ” 物。 釗干之任一種或此等之混合 又，防止劑溶液中，可因應必要而添加01g/L至 318904 10 1345815 jOOg/L(#乂仓為lg/L至5〇g/L)之磷酸系、硼酸系、有機酸 系之PH緩衝劑。過少時則pH緩衝效果低，過多時效果已 達飽和’多加無益。 又，防止劑溶液中如有溶出金屬之情形，可因應必要 而添加Ug/L至20〇g/L(較佳為lg/L至5〇g/L)之胺系、胺 ，幾酉夂系緩酸系之錯合劑（⑶刪^吨叫㈣作為金屬遮 (metal shleldlng agent)。過少時金屬經錯合反應後遮 _敝效果少，而過多時效果已達飽和，多加無益。 #環氧樹脂滲出防止劑溶液之pH無_別限定，但通 ^在pH為1至14之間處理，而以在pH為2至^之間處
Si果::此範圍時，素材之損害較大，環氧樹脂渗出 又，環氧樹脂渗出防止劑溶液之溫度，能在水 者即可，但通常是5至啊，較佳是1〇 _果已達二 Γ環氧樹脂渗出防止效果低，而過高時 眚點已達飽和，只會使作業性變差，而並無提高溫度之優 使用有機溶劑作為溶劑時，有機溶 乙異丙醇等醇類’丙…基乙基酮等 甲: 有機洛劑之際，環氧樹脂滲出 使用 佳。 W，合履之，皿度以室溫為 要在在環氧樹脂滲出防止劑溶液中之處理時間，口 慮到作業之再現性與效率時 如考 則以1秒以上120秒以下較 318904 1345815 .•二=時’則環氧樹脂渗出防止效果 / ”性：過長時效果已達飽和’且作業效率變:業 飯氧樹脂滲出防止方法 _ . 氧樹月旨滲出防止·液中，= =基材浸潰在環 防止劑溶液藉由喷淋、嗔土/料氧樹脂滲出 塗布器等而進行塗佈算錨& 戍疋錯由％轉 丁㈣4使接觸後，經水洗、乾燥即可。 又’在環氧樹脂滲出防止射，藉由同時含有乃 上述含氟有機化合物中、與電鍍皮膜或金屬素材等 孟屬表面之變色防止劑或封孔處理劑，即可 防止效果、封减㈣果及滲出μ絲。叫予文色 如此之變色防止劑或封孔處理劑’可分別使用習知 者。例如，變色防止劑宜使用喃唾衍生物、三唾衍生物、 四心于生物、—衍生物等含氮雜環狀化合物。 藉由進行如上述環氧樹腊滲出防止處理，在電路基材 表面之電鍍面上吸附上述含氟有機化合物，而形成由：至 參刀子左右厚度之含氣有機化合物所成之被覆膜，因此， 增加電錢面與環氧樹脂之接觸角，即可抑制環氧樹脂之渗 出。同時，由於所吸附之含氟有機化合物之被覆膜為極二 而不會對線接合性.、鑄模性等組合特性帶來不良影響。並 且，亦不會損及變色防止效果或是封孔處理效果。本發明 亦包含藉由上述方法實施環氧樹脂滲出防止處理之電路基 材’及使用該電路基材的半導體封裝。 (實施例） 以下根據實施例說明本發明’但本發明並不侷限於此 318904 12 1345815 • •等之實施例。 -實施例1至10 為了提高在銅合金（Cu: 97.7%—Sn : 2〇〇/ —P:〇.G3%)製導線架的基材之密著性而進行❹二〇.2% ⑼咖咖㈣)後，在導線架全面進行鍵金，鍵二f打底 之任一種電鍍，之後藉由浸潰將表丨 —、又銅中 出防止劑中進行處理。 之&氧樹脂滲 同時，實施例8,9，1〇使用之環裊满 ¥ 基一一^ —三唑—1 —基、1—四唑基。 基、1，2,3 該等之基材，進行黏晶、並對耐環氧樹脂渗出性⑽ B B 〇 ^# ^ (W/B } ^ ^ ^ ^ ^ ^ ^ 將其L果示於表1。表1中，浴組成中之「〜 坪 加之意，評估中之「-」是表示不為評估對象ΐ表示未添 耐環氧樹脂滲出性之評估係以下述方法進行 鲁將市售之低應力黏晶用環氧樹脂⑽咖: ABLESTIK公司製）以注射器塗佈 ， 處理之錢面上之後，在大氣中熱壓，二 = 防止劑 化後’以金屬顯微鏡⑽倍)觀察環氧樹：二 ^第1圖所示黏晶用環氧樹脂之周圍所見到 樹= 出(第〗圖中，黏晶用環氧樹脂渗出是以黑圓二^ =之周圍可見到稍微淡薄之寬度狹窄部分表示 月: ΓΡΐ^夕出h取厭重之環氧樹脂之珠出旦 (EB〇量），並使用以下基準評估。 > 出里 3I8904 13 1345815 -〇：未滿1 〇 # m △ : lOym以上未滿ΙΟΟ/zm X : 100 // m 以上 線接合性之評估是以下述方法進行。 使用25 # m之金線，並以超音波併熱壓接方式（溫度： 200°C、荷重：50g、時間：10ms)進行線接合，以PULL TESTER(拉伸測定器），測定拉伸強度，並使用以下基準評 估。 : 10gf 以上 X :未滿10gf 鑄模特性之評估是以下述方法進行。 將市售之鑄模用環氧樹脂（SUMITOMO BAKELITE製 ΕΜΕ - 6300)塗佈於經環氧樹脂滲出防止劑處理之鍍面上 之後，於175°C經加熱5小時硬化後，測定剪切強度，並 使用以下基準評估。 : 10kgf/cm2 以上 X :未滿 10 kgf/cm2 變色防止效果之評估是以下述方法進行。 在40°C、濕度90%下加濕96小時後，觀察外觀並使 用以下基準評估。 〇：不變色 X :有變色 比較例1 除了使用以羧酸作為主成分，進行在表1所記載之環 14 318904 1345815 •氧樹脂滲出防止劑處理之外，其餘與實施例1同樣進行環 •氧樹脂滲出防止劑處理，與實施例1同樣評估。並將其結 果示於表1。 比較例2 除了使用表1記載之基板，而不進行環氧樹脂滲出防 止劑處理之外，其餘與實施例1同樣進行，與實施例1同 樣評估。並將其結杲示於表1。 [4 1-1] II 實> 跑例 1 2 3 4 基材、或電鍍表 面 金 金 銀 銀 主成分 F(CF2)g-COO Η ： 0.1g/L F(CF2)8-SH : 0.1g/L F(CF2)8-SH : 0.1g/L F(CF2)8-NH2 : 0.1 g/L 溶劑 異丙醇：lg/L — — 異丙醇：lg/L 浴 pH缓衝劑 焦磷酸鉀： 1S/L — 四氟酸鉀：1 R/L — 組 錯合劑 — — — — 成 界面活性劑 聚環氧乙烷壬 基苯基醚：1 mg/L — 聚環氧乙烷壬 基苯基醚：1 mg/L — 變色防止劑 — — 硫醇苯并噻 唑：0.1g/L — ，處 pH 9.0 9.0 9.0 9.0 理 條 處理溫度 (°C) 25 25 25 25 件 處理時間（s) 30 30 30 30 評 耐EBO性 Δ 〇 Δ 〇 估 W/B性 〇 〇 〇 〇 結 鎮模性 〇 〇 〇 〇 果 財變色性 〇 〇 〇 〇 15 318904 1345815 .[表.1_2]
1 '施例 5 6 7 8 基材、或電鍍 表面 金 銀 銅 銅 浴 組 成 主成分 F(CF2)g(CH2)2-OP 0(0H)2 ： 0.1g/L F(CF2)6(CH2)2-OP 0(0¾ ： 0.1 g/L F(CF2)8(CH2)2-OPOOH F(CF2)6(CH2)2-0, ： 0.1g/L F(CF2)8(CH2)2-N2C3H3：0.1 g/L 溶劑 — — 異丙醇：1 g/L — PH 緩衝劑 焦磷酸鉀：1 g/L — 焦鱗酸鉀：1 g/L — 錯合劑 — — 乙二胺4醋酸4鈉：1 g/L — 界面 活性劑 — — — — 變色 防止劑 — — 笨并三唑O.lg/L — 1處 ’理 條 件 pH 9.0 9.0 9.0 9.0 處理溫度 CC) 25 25 25 25 處理時間 (S) 30 30 30 30 評 估 結 果 财EBO性 〇 〇 〇 〇 W/Β性 〇 〇 — — 鑄模性 〇 〇 〇 〇 耐變色 性 〇 〇 〇 〇 16 318904 1345815 [表 1-3]
實施例 比較例 9 10 1 2 基材、或電鐘 表面 銅 銅 金 銅 浴 组 成 主成分 f(cf2)8-n3c2 H2 : 0.1g/L F(CF2)8(CH2)2-N4 CH ： 0.1g/L H(CH2)g-COOH 未處理 溶劑 異丙醇：lg/L — 異丙醇：1 g/L — pH緩衝劑 四棚酸鉀： lg/L — 焦磷酸鉀：lg/L — 錯合劑 乙二胺4醋酸 4 鈉：1 g/L 乙二胺4醋酸4鈉： 1 g/L 乙二胺4醋酸4 鋼：1 g/L ~ 界面活性劑 — — — — 變色防止劑 — — — — 處 理 條 件 pH 9.0 9.0 9.0 — 處理溫度 CC). 25 25 25 — 處理時間 (S) 30 30 30 — 評 估 结 果 而十EBO性 〇 〇 X X W/Β性 — — 〇 — 模镑性 〇 〇 〇 〇 耐變色性 〇 〇 〇 X 【圖式簡單說明】 第1圖表示在實施例之耐環氧樹脂滲出性評估中環氧 脂滲出量之測定方法圖。 17 318904

Claims (1)

  1. 丄：) 第96101555號專利申請案 (99年3月10曰） 十、申請專利範圍： fu 1 v~,r—7 -種環氧樹脂滲出防止劑，特 徵為：含有具碳原子數3個以上24個以下之氟烴基 CJxHyFz-(x=3 至 24、y=〇 至 48、ζ=ι 至 49 y¥2x+i) 與選自氫硫基、胺基、碟酸醋基、緩基、味嗤基、三哇 基所成群組之極性基尺―的含氟有機化合物。 2.如申凊專利範圍第1項之環氧樹脂渗出防止劑，其中， 係含有變色防止劑或封孔處理劑。 ，其中， 其中， 四唾衍 請專㈣圍第2項之環氧樹轉出防止劑 父色防止劑為含有含氮雜環狀化合物。 4·:申請專利範圍第3項之環氧樹脂滲出防止劑 3氮雜環狀化合物為味唾衍生物、三唾衍生物 生物、噻唑衍生物中之任一種。 5.==出防…，其特徵為··將電路基材浸 /貝於3有申凊專利範圍第1至4項中杯一 TS s 滲出防止劑之溶液中，1 θ 、 員之裱氧樹脂 劑之溶液::::將含有該環氧樹脂滲出防止 %之，合液散布、塗布到電路基材。 6. 一種電路基材，其特徵為： 申請專利範圍第！至4項中H 潰於含有 劍之溶液中，或是將含縣樹月旨渗出防止 散布、塗布到電路基材而二環氧曰:二=劑之溶液 者。 J衣乳树月日滲出防止處理 路基材’其龍為：在表面吸 第I至4項中任一瑁所、+ T叫專利乾圍 、处之環氧樹脂滲出防止劑。 318904修正版 18 1345815 第96101555號專利申請案 (99年3月10日） • 8. —種半導體封裝件，其特徵為：使用申請專利範圍第6 • 或第7項之電路基材。
    19 318904修正版
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