TWI342582B - Method of surface texturizing - Google Patents
Method of surface texturizing Download PDFInfo
- Publication number
- TWI342582B TWI342582B TW093106236A TW93106236A TWI342582B TW I342582 B TWI342582 B TW I342582B TW 093106236 A TW093106236 A TW 093106236A TW 93106236 A TW93106236 A TW 93106236A TW I342582 B TWI342582 B TW I342582B
- Authority
- TW
- Taiwan
- Prior art keywords
- features
- process chamber
- workpiece
- component
- stress
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 234
- 230000008569 process Effects 0.000 claims description 148
- 238000006243 chemical reaction Methods 0.000 claims description 82
- 238000010894 electron beam technology Methods 0.000 claims description 25
- 239000000126 substance Substances 0.000 claims description 21
- 238000007788 roughening Methods 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000005422 blasting Methods 0.000 claims description 12
- 238000005488 sandblasting Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 4
- 239000002223 garnet Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
- 239000008187 granular material Substances 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005086 pumping Methods 0.000 claims 1
- 238000010408 sweeping Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 64
- 239000000758 substrate Substances 0.000 description 37
- 239000002245 particle Substances 0.000 description 24
- 238000011109 contamination Methods 0.000 description 20
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000035882 stress Effects 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000004043 dyeing Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 206010041349 Somnolence Diseases 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- XJNCHICLWKVTQA-UHFFFAOYSA-N [Mo].[W].[Cr].[Ni] Chemical compound [Mo].[W].[Cr].[Ni] XJNCHICLWKVTQA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000005088 metallography Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C11/00—Selection of abrasive materials or additives for abrasive blasts
- B24C11/005—Selection of abrasive materials or additives for abrasive blasts of additives, e.g. anti-corrosive or disinfecting agents in solid, liquid or gaseous form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/622,178 US6812471B2 (en) | 2002-03-13 | 2003-07-17 | Method of surface texturizing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200504793A TW200504793A (en) | 2005-02-01 |
| TWI342582B true TWI342582B (en) | 2011-05-21 |
Family
ID=34216285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093106236A TWI342582B (en) | 2003-07-17 | 2004-03-09 | Method of surface texturizing |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5575352B2 (ja) |
| KR (1) | KR100887218B1 (ja) |
| CN (1) | CN100351998C (ja) |
| SG (1) | SG137688A1 (ja) |
| TW (1) | TWI342582B (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI725950B (zh) * | 2015-02-06 | 2021-05-01 | 美商應用材料股份有限公司 | 針對更低薄膜應力及更低操作溫度而配置的３ｄ列印腔室元件及線圈間隔件的杯件 |
| TWI797497B (zh) * | 2018-04-17 | 2023-04-01 | 美商應用材料股份有限公司 | 用以為使用在半導體處理腔室中的部件的表面提供紋理的系統及其方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007083363A1 (ja) * | 2006-01-18 | 2007-07-26 | Mitsubishi Denki Kabushiki Kaisha | 電子ビーム表面処理方法及び電子ビーム表面処理装置 |
| US20080092806A1 (en) * | 2006-10-19 | 2008-04-24 | Applied Materials, Inc. | Removing residues from substrate processing components |
| JP5072398B2 (ja) * | 2007-03-23 | 2012-11-14 | 株式会社アルバック | 金属製部材の溶接部の表面処理方法 |
| KR20110082542A (ko) * | 2008-10-03 | 2011-07-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 래버코트 예비 세정 및 예열 |
| DE102010060143A1 (de) * | 2009-11-05 | 2011-06-09 | Oerlikon Solar Ag, Trübbach | Vakuumverarbeitungskammer hergestellt durch Aluminiumguss |
| EP2554710B1 (en) * | 2010-03-29 | 2017-02-22 | JX Nippon Mining & Metals Corporation | Tantalum coil for sputtering and method for processing the coil |
| JP4763101B1 (ja) * | 2010-03-29 | 2011-08-31 | Ｊｘ日鉱日石金属株式会社 | スパッタリング用タンタル製コイル及び同コイルの加工方法 |
| CN105900210B (zh) * | 2014-12-15 | 2021-06-01 | 应用材料公司 | 用于纹理化腔室部件的方法和具有纹理化表面的腔室部件 |
| US11569069B2 (en) | 2015-02-06 | 2023-01-31 | Applied Materials, Inc. | 3D printed chamber components configured for lower film stress and lower operating temperature |
| US9346113B1 (en) * | 2015-03-19 | 2016-05-24 | Johnson Technology, Inc. | Electrical discharge machining integrated control system |
| KR102200515B1 (ko) * | 2017-10-20 | 2021-01-12 | 한국생산기술연구원 | 절삭공구 및 전자빔을 이용한 절삭공구의 브레이징 방법 및 이를 위한 전자빔 장치 |
| CN110560870A (zh) * | 2019-10-17 | 2019-12-13 | 太仓束捍机电科技有限公司 | 一种l型真空束焊机工件放置台 |
| US11739411B2 (en) | 2019-11-04 | 2023-08-29 | Applied Materials, Inc. | Lattice coat surface enhancement for chamber components |
| KR102439455B1 (ko) * | 2020-11-13 | 2022-09-02 | 한국생산기술연구원 | 전자빔 가공장치 및 가공방법 |
| CN117733305B (zh) * | 2024-02-20 | 2024-04-26 | 四川华束科技有限公司 | 一种封离式电子枪及非真空电子束焊接机器人 |
| CN118390060A (zh) * | 2024-06-27 | 2024-07-26 | 艾庞半导体科技(四川)有限公司 | 一种用于半导体晶片研磨工艺的载体的表面处理方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0740527B2 (ja) | 1984-09-21 | 1995-05-01 | 新日本製鐵株式会社 | 磁区制御処理を施した方向性電磁鋼板およびその製造方法 |
| JPS63278682A (ja) * | 1987-05-06 | 1988-11-16 | Mitsubishi Heavy Ind Ltd | 電子ビ−ム溶接方法 |
| JPS63212081A (ja) * | 1987-10-02 | 1988-09-05 | Toshiba Corp | レーザ加工方法 |
| GB9010186D0 (en) * | 1990-05-04 | 1990-06-27 | Welding Inst | Electron beam welding |
| JPH05340473A (ja) | 1992-06-01 | 1993-12-21 | Nippon Steel Corp | ピストンリングとその加工方法 |
| JPH06114577A (ja) * | 1992-10-05 | 1994-04-26 | Fujitsu Ltd | 微細加工装置 |
| GB9310820D0 (en) * | 1993-05-26 | 1993-07-14 | Welding Inst | Surface modification |
| US5474649A (en) | 1994-03-08 | 1995-12-12 | Applied Materials, Inc. | Plasma processing apparatus employing a textured focus ring |
| JP3744964B2 (ja) * | 1995-04-06 | 2006-02-15 | 株式会社アルバック | 成膜装置用構成部品及びその製造方法 |
| JPH0966325A (ja) | 1995-09-04 | 1997-03-11 | Showa Alum Corp | 異種金属材料の接合方法 |
| JP3738790B2 (ja) * | 1996-07-26 | 2006-01-25 | セイコーエプソン株式会社 | インクジェット記録ヘッドの構成部材の開口穿孔方法 |
| KR20000069523A (ko) * | 1997-01-16 | 2000-11-25 | 보텀필드 레인, 에프. | 기상 증착 요소 및 기상 증착 방법 |
| JP3449459B2 (ja) | 1997-06-02 | 2003-09-22 | 株式会社ジャパンエナジー | 薄膜形成装置用部材の製造方法および該装置用部材 |
| JPH11156563A (ja) | 1997-11-25 | 1999-06-15 | Komatsu Ltd | レーザ光による微小マーキング装置とそのマーキング方法 |
| US6288406B1 (en) * | 1998-03-06 | 2001-09-11 | Dupont Photomasks, Inc. | Electron beam lithography system having variable writing speed |
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-
2004
- 2004-03-09 TW TW093106236A patent/TWI342582B/zh not_active IP Right Cessation
- 2004-06-30 SG SG200403836-0A patent/SG137688A1/en unknown
- 2004-07-16 KR KR1020040055434A patent/KR100887218B1/ko not_active IP Right Cessation
- 2004-07-16 JP JP2004210030A patent/JP5575352B2/ja not_active Expired - Lifetime
- 2004-07-19 CN CNB2004100697888A patent/CN100351998C/zh not_active Expired - Lifetime
-
2012
- 2012-06-20 JP JP2012138357A patent/JP5703262B2/ja not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI725950B (zh) * | 2015-02-06 | 2021-05-01 | 美商應用材料股份有限公司 | 針對更低薄膜應力及更低操作溫度而配置的３ｄ列印腔室元件及線圈間隔件的杯件 |
| TWI797497B (zh) * | 2018-04-17 | 2023-04-01 | 美商應用材料股份有限公司 | 用以為使用在半導體處理腔室中的部件的表面提供紋理的系統及其方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG137688A1 (en) | 2007-12-28 |
| KR20050009221A (ko) | 2005-01-24 |
| JP2012245565A (ja) | 2012-12-13 |
| JP5575352B2 (ja) | 2014-08-20 |
| CN1577732A (zh) | 2005-02-09 |
| JP5703262B2 (ja) | 2015-04-15 |
| JP2005039279A (ja) | 2005-02-10 |
| KR100887218B1 (ko) | 2009-03-06 |
| TW200504793A (en) | 2005-02-01 |
| CN100351998C (zh) | 2007-11-28 |
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