TWI339840B - Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor - Google Patents

Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor

Info

Publication number
TWI339840B
TWI339840B TW095143066A TW95143066A TWI339840B TW I339840 B TWI339840 B TW I339840B TW 095143066 A TW095143066 A TW 095143066A TW 95143066 A TW95143066 A TW 95143066A TW I339840 B TWI339840 B TW I339840B
Authority
TW
Taiwan
Prior art keywords
manufacturing
method therefor
recording medium
optical recording
sputtering target
Prior art date
Application number
TW095143066A
Other languages
English (en)
Other versions
TW200733098A (en
Inventor
Yoshitaka Hayashi
Noboru Sasa
Hiroshi Miura
Toshishige Fujii
Masayuki Fujiwara
Katsuyuki Yamada
Shinya Narumi
Masaki Kato
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of TW200733098A publication Critical patent/TW200733098A/zh
Application granted granted Critical
Publication of TWI339840B publication Critical patent/TWI339840B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/085—Oxides of iron group metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)
TW095143066A 2005-11-22 2006-11-21 Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor TWI339840B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005337654 2005-11-22
JP2005339102 2005-11-24
JP2006034370 2006-02-10
JP2006037099 2006-02-14

Publications (2)

Publication Number Publication Date
TW200733098A TW200733098A (en) 2007-09-01
TWI339840B true TWI339840B (en) 2011-04-01

Family

ID=38052390

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095143066A TWI339840B (en) 2005-11-22 2006-11-21 Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor

Country Status (3)

Country Link
US (1) US7488526B2 (zh)
CN (1) CN101191194B (zh)
TW (1) TWI339840B (zh)

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EP1704058B1 (en) * 2004-08-31 2010-06-30 Ricoh Company, Ltd. Write-once-read-many optical recording medium and sputtering target thereof
JP4871062B2 (ja) * 2006-03-01 2012-02-08 株式会社リコー スパッタリングターゲット及びその製造方法、並びに追記型光記録媒体
JP4764858B2 (ja) * 2007-01-30 2011-09-07 株式会社リコー 光記録媒体、スパッタリングターゲット及びその製造方法
JP2008251147A (ja) * 2007-03-07 2008-10-16 Ricoh Co Ltd 多層光情報媒体とその光情報処理装置、並びに実行プログラム及びそれを備えた情報媒体
US8124211B2 (en) * 2007-03-28 2012-02-28 Ricoh Company, Ltd. Optical recording medium, sputtering target, and method for manufacturing the same
US20090022932A1 (en) * 2007-07-04 2009-01-22 Toshishige Fujii Optical recording medium
JP4810519B2 (ja) * 2007-09-14 2011-11-09 株式会社リコー 多層式追記型光記録媒体及びその記録方法、記録装置
US8318243B2 (en) * 2007-11-29 2012-11-27 Ricoh Company, Ltd. Method for manufacturing optical information recording medium
JP4755680B2 (ja) * 2007-12-12 2011-08-24 太陽誘電株式会社 光情報記録媒体およびその製造方法
EP2135973A1 (en) * 2008-06-18 2009-12-23 Centre National de la Recherche Scientifique Method for the manufacturing of sputtering targets using an inorganic polymer
JP2011084804A (ja) * 2009-09-18 2011-04-28 Kobelco Kaken:Kk 金属酸化物−金属複合スパッタリングターゲット
TWI400348B (zh) * 2010-03-23 2013-07-01 China Steel Corp Transparent conductive film forming method
US20130180850A1 (en) * 2010-07-09 2013-07-18 Oc Oerlikon Balzers Ag Magnetron sputtering apparatus
US8361651B2 (en) 2011-04-29 2013-01-29 Toyota Motor Engineering & Manufacturing North America, Inc. Active material for rechargeable battery
US9057126B2 (en) * 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US8673493B2 (en) 2012-05-29 2014-03-18 Toyota Motor Engineering & Manufacturing North America, Inc. Indium-tin binary anodes for rechargeable magnesium-ion batteries
US8647770B2 (en) 2012-05-30 2014-02-11 Toyota Motor Engineering & Manufacturing North America, Inc. Bismuth-tin binary anodes for rechargeable magnesium-ion batteries
US20130327634A1 (en) * 2012-06-08 2013-12-12 Chang-Beom Eom Misaligned sputtering systems for the deposition of complex oxide thin films
US10676814B2 (en) * 2017-09-28 2020-06-09 The United States Of America As Represented By The Secretary Of The Navy System and method for controlling the elemental composition of films produced by pulsed laser deposition
TWI727322B (zh) * 2018-08-09 2021-05-11 日商Ｊｘ金屬股份有限公司 濺鍍靶及磁性膜
CN114107901B (zh) * 2020-08-28 2023-06-13 中国科学院半导体研究所 一种在半导体ZnO上外延制备四方相BiFeO3薄膜的方法及系统
CN113727517B (zh) * 2021-09-03 2022-09-13 博敏电子股份有限公司 一种提升pcb板厚均匀性的方法及内层线路板流胶槽结构
CN114000106A (zh) * 2021-10-15 2022-02-01 九江学院 一种低摩擦系数MoS2基复合固体润滑涂层及其制备方法

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JP2578815B2 (ja) 1987-07-08 1997-02-05 松下電器産業株式会社 直流スパッタリング法
JP2769153B2 (ja) 1987-09-03 1998-06-25 松下電器産業株式会社 情報記録薄膜形成用スパッタリングターゲット
JPH02265052A (ja) 1989-04-06 1990-10-29 Mitsui Petrochem Ind Ltd 光記録媒体の製造方法
JPH06184740A (ja) 1992-12-17 1994-07-05 Hitachi Metals Ltd 光磁気記録媒体用ターゲットおよびその製造方法
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JPH0867980A (ja) 1993-07-28 1996-03-12 Asahi Glass Co Ltd 窒化ケイ素膜の製造方法
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JPH1192922A (ja) 1997-09-16 1999-04-06 Toshiba Corp 誘電体膜形成用スパッタリングターゲット、その製造方法および強誘電体メモリの製造方法
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JP4307767B2 (ja) * 2001-03-07 2009-08-05 株式会社リコー 光情報記録媒体、及びこの媒体の情報記録方法
TW584849B (en) * 2001-07-12 2004-04-21 Matsushita Electric Ind Co Ltd Optical information recording medium and recording method using the same
US6713148B1 (en) * 2002-10-08 2004-03-30 Industrial Technology Research Institute Optical information recording medium
JP4577872B2 (ja) 2003-04-15 2010-11-10 株式会社リコー 追記型光記録媒体
EP1475793B1 (en) * 2003-04-15 2007-12-05 Ricoh Company, Ltd. Write-once-read-many optical recording medium and process for recording and reproducing of the optical medium
US7399511B2 (en) * 2004-04-22 2008-07-15 Tdk Corporation Optical recording medium
JP4865249B2 (ja) 2004-08-31 2012-02-01 株式会社リコー スパッタリングターゲットとその製造方法、及び光記録媒体

Also Published As

Publication number Publication date
US20070114129A1 (en) 2007-05-24
CN101191194A (zh) 2008-06-04
US7488526B2 (en) 2009-02-10
TW200733098A (en) 2007-09-01
CN101191194B (zh) 2012-05-02

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees