TWI334217B - - Google Patents
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- Publication number
- TWI334217B TWI334217B TW093107120A TW93107120A TWI334217B TW I334217 B TWI334217 B TW I334217B TW 093107120 A TW093107120 A TW 093107120A TW 93107120 A TW93107120 A TW 93107120A TW I334217 B TWI334217 B TW I334217B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- active layer
- region
- single crystal
- thickness
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 165
- 239000010408 film Substances 0.000 claims description 123
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 60
- 229910052732 germanium Inorganic materials 0.000 claims description 59
- 238000004519 manufacturing process Methods 0.000 claims description 57
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 53
- 229910052707 ruthenium Inorganic materials 0.000 claims description 53
- 238000005468 ion implantation Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 239000011574 phosphorus Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 208000027697 autoimmune lymphoproliferative syndrome due to CTLA4 haploinsuffiency Diseases 0.000 claims description 13
- 239000004576 sand Substances 0.000 claims description 12
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 9
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 9
- -1 hydrogen ions Chemical class 0.000 claims description 8
- 238000002109 crystal growth method Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical group O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 245
- 239000010410 layer Substances 0.000 description 116
- 230000007547 defect Effects 0.000 description 57
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 33
- 239000010453 quartz Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000002994 raw material Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910002804 graphite Inorganic materials 0.000 description 10
- 239000010439 graphite Substances 0.000 description 10
- 238000009413 insulation Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000000691 measurement method Methods 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- 229910052691 Erbium Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000009643 growth defect Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102000004190 Enzymes Human genes 0.000 description 1
- 108090000790 Enzymes Proteins 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 208000012696 congenital leptin deficiency Diseases 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003073768A JP4854917B2 (ja) | 2003-03-18 | 2003-03-18 | Ｓｏｉウェーハ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200423378A TW200423378A (en) | 2004-11-01 |
| TWI334217B true TWI334217B (ko) | 2010-12-01 |
Family
ID=33027796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093107120A TW200423378A (en) | 2003-03-18 | 2004-03-17 | SOI wafer and method for manufacturing same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7518187B2 (ko) |
| EP (1) | EP1605510B1 (ko) |
| JP (1) | JP4854917B2 (ko) |
| KR (1) | KR101007678B1 (ko) |
| CN (1) | CN100452408C (ko) |
| TW (1) | TW200423378A (ko) |
| WO (1) | WO2004084308A1 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200428637A (en) * | 2003-01-23 | 2004-12-16 | Shinetsu Handotai Kk | SOI wafer and production method thereof |
| JP4854917B2 (ja) * | 2003-03-18 | 2012-01-18 | 信越半導体株式会社 | Ｓｏｉウェーハ及びその製造方法 |
| JP2006294737A (ja) * | 2005-04-07 | 2006-10-26 | Sumco Corp | Ｓｏｉ基板の製造方法及びその製造における剥離ウェーハの再生処理方法。 |
| JP4604889B2 (ja) * | 2005-05-25 | 2011-01-05 | 株式会社Ｓｕｍｃｏ | シリコンウェーハの製造方法、並びにシリコン単結晶育成方法 |
| JP2007067321A (ja) * | 2005-09-02 | 2007-03-15 | Sumco Corp | Ｓｉｍｏｘ基板およびその製造方法 |
| WO2007074552A1 (ja) * | 2005-12-27 | 2007-07-05 | Shin-Etsu Chemical Co., Ltd. | Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ |
| JP5121139B2 (ja) * | 2005-12-27 | 2013-01-16 | ジルトロニック アクチエンゲゼルシャフト | アニールウエハの製造方法 |
| JP4805681B2 (ja) * | 2006-01-12 | 2011-11-02 | ジルトロニック アクチエンゲゼルシャフト | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
| FR2938118B1 (fr) * | 2008-10-30 | 2011-04-22 | Soitec Silicon On Insulator | Procede de fabrication d'un empilement de couches minces semi-conductrices |
| FR3003997B1 (fr) * | 2013-03-29 | 2015-03-20 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite |
| JP7495238B2 (ja) * | 2020-02-19 | 2024-06-04 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの製造方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06204150A (ja) * | 1992-12-28 | 1994-07-22 | Sumitomo Sitix Corp | 半導体用シリコン単結晶基板の製造方法 |
| DE69508473T2 (de) * | 1994-07-06 | 1999-10-28 | Shinetsu Handotai Kk | Verfahren zur Herstellung von Silizium-Einkristall und Tiegel aus geschmolzenem Silika dafür |
| JPH1079498A (ja) | 1996-09-03 | 1998-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Ｓｏｉ基板の製造方法 |
| US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
| JPH1140786A (ja) | 1997-07-18 | 1999-02-12 | Denso Corp | 半導体基板及びその製造方法 |
| US6083324A (en) * | 1998-02-19 | 2000-07-04 | Silicon Genesis Corporation | Gettering technique for silicon-on-insulator wafers |
| JP3932369B2 (ja) | 1998-04-09 | 2007-06-20 | 信越半導体株式会社 | 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ |
| DE19823962A1 (de) * | 1998-05-28 | 1999-12-02 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung eines Einkristalls |
| US6224668B1 (en) * | 1998-06-02 | 2001-05-01 | Shin-Etsu Handotai Co., Ltd. | Method for producing SOI substrate and SOI substrate |
| US6077343A (en) * | 1998-06-04 | 2000-06-20 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it |
| JP3762144B2 (ja) * | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Ｓｏｉ基板の作製方法 |
| JP2000082679A (ja) * | 1998-07-08 | 2000-03-21 | Canon Inc | 半導体基板とその作製方法 |
| US6180497B1 (en) * | 1998-07-23 | 2001-01-30 | Canon Kabushiki Kaisha | Method for producing semiconductor base members |
| JP4634553B2 (ja) * | 1999-06-08 | 2011-02-16 | シルトロニック・ジャパン株式会社 | シリコン単結晶ウエーハおよびその製造方法 |
| JP2001044398A (ja) * | 1999-07-30 | 2001-02-16 | Mitsubishi Materials Silicon Corp | 張り合わせ基板およびその製造方法 |
| JP2001144275A (ja) * | 1999-08-27 | 2001-05-25 | Shin Etsu Handotai Co Ltd | 貼り合わせｓｏｉウエーハの製造方法および貼り合わせｓｏｉウエーハ |
| US6653209B1 (en) * | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
| JP3994602B2 (ja) * | 1999-11-12 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびその製造方法並びにｓｏｉウエーハ |
| JP2002134518A (ja) * | 2000-10-27 | 2002-05-10 | Mitsubishi Materials Silicon Corp | 抵抗率を調整したシリコンウェーハ及びそのウェーハの製造方法 |
| JP3994665B2 (ja) * | 2000-12-28 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびシリコン単結晶の製造方法 |
| US20020084451A1 (en) * | 2000-12-29 | 2002-07-04 | Mohr Thomas C. | Silicon wafers substantially free of oxidation induced stacking faults |
| DE10124032B4 (de) * | 2001-05-16 | 2011-02-17 | Telefunken Semiconductors Gmbh & Co. Kg | Verfahren zur Herstellung von Bauelementen auf einem SOI-Wafer |
| JP2003204048A (ja) * | 2002-01-09 | 2003-07-18 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ |
| JP4207577B2 (ja) * | 2003-01-17 | 2009-01-14 | 信越半導体株式会社 | Ｐドープシリコン単結晶の製造方法 |
| JP4854917B2 (ja) * | 2003-03-18 | 2012-01-18 | 信越半導体株式会社 | Ｓｏｉウェーハ及びその製造方法 |
-
2003
- 2003-03-18 JP JP2003073768A patent/JP4854917B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-12 EP EP04720203A patent/EP1605510B1/en not_active Expired - Lifetime
- 2004-03-12 WO PCT/JP2004/003347 patent/WO2004084308A1/ja active Application Filing
- 2004-03-12 KR KR1020057017178A patent/KR101007678B1/ko active IP Right Grant
- 2004-03-12 US US10/546,693 patent/US7518187B2/en not_active Expired - Lifetime
- 2004-03-12 CN CNB2004800058863A patent/CN100452408C/zh not_active Expired - Lifetime
- 2004-03-17 TW TW093107120A patent/TW200423378A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004281883A (ja) | 2004-10-07 |
| US7518187B2 (en) | 2009-04-14 |
| WO2004084308A1 (ja) | 2004-09-30 |
| EP1605510B1 (en) | 2011-10-05 |
| JP4854917B2 (ja) | 2012-01-18 |
| TW200423378A (en) | 2004-11-01 |
| EP1605510A4 (en) | 2009-09-16 |
| KR20050109568A (ko) | 2005-11-21 |
| EP1605510A1 (en) | 2005-12-14 |
| CN1757115A (zh) | 2006-04-05 |
| KR101007678B1 (ko) | 2011-01-13 |
| CN100452408C (zh) | 2009-01-14 |
| US20060086313A1 (en) | 2006-04-27 |
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