TWI325627B - - Google Patents

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Publication number
TWI325627B
TWI325627B TW095105417A TW95105417A TWI325627B TW I325627 B TWI325627 B TW I325627B TW 095105417 A TW095105417 A TW 095105417A TW 95105417 A TW95105417 A TW 95105417A TW I325627 B TWI325627 B TW I325627B
Authority
TW
Taiwan
Prior art keywords
substrate
support
hole
layer
insulating film
Prior art date
Application number
TW095105417A
Other languages
English (en)
Chinese (zh)
Other versions
TW200701428A (en
Inventor
Hiroaki Nakashima
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200701428A publication Critical patent/TW200701428A/zh
Application granted granted Critical
Publication of TWI325627B publication Critical patent/TWI325627B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13009—Bump connector integrally formed with a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)
TW095105417A 2005-02-17 2006-02-17 Semiconductor device manufacturing method and semiconductor device TW200701428A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005040556A JP3880602B2 (ja) 2005-02-17 2005-02-17 半導体装置の製造方法、半導体装置

Publications (2)

Publication Number Publication Date
TW200701428A TW200701428A (en) 2007-01-01
TWI325627B true TWI325627B (ja) 2010-06-01

Family

ID=36916365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105417A TW200701428A (en) 2005-02-17 2006-02-17 Semiconductor device manufacturing method and semiconductor device

Country Status (4)

Country Link
JP (1) JP3880602B2 (ja)
CN (1) CN101120438B (ja)
TW (1) TW200701428A (ja)
WO (1) WO2006087957A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478009B2 (ja) 2007-11-09 2014-04-23 株式会社フジクラ 半導体パッケージの製造方法
JP5138395B2 (ja) 2008-01-22 2013-02-06 新光電気工業株式会社 配線基板及びその製造方法
JP5142862B2 (ja) * 2008-07-10 2013-02-13 新光電気工業株式会社 配線基板の製造方法
US8859424B2 (en) * 2009-08-14 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer carrier and method of manufacturing
US20110042803A1 (en) * 2009-08-24 2011-02-24 Chen-Fu Chu Method For Fabricating A Through Interconnect On A Semiconductor Substrate
KR101604607B1 (ko) * 2009-10-26 2016-03-18 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
CN102120561B (zh) * 2010-01-08 2012-07-11 中芯国际集成电路制造(上海)有限公司 形成晶圆穿通孔的方法
KR101185690B1 (ko) 2011-08-02 2012-09-24 성균관대학교산학협력단 기판 처리 방법
CN103258790A (zh) * 2013-04-27 2013-08-21 江阴长电先进封装有限公司 一种露出硅通孔内金属的方法
JP5827277B2 (ja) * 2013-08-02 2015-12-02 株式会社岡本工作機械製作所 半導体装置の製造方法
CN103441150B (zh) * 2013-08-09 2016-03-02 如皋市晟太电子有限公司 一种适合简化封装的恒流管
JP6458429B2 (ja) * 2014-09-30 2019-01-30 大日本印刷株式会社 導電材充填貫通電極基板及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319821A (ja) * 2003-04-17 2004-11-11 Sharp Corp 半導体装置の製造方法
JP2004327910A (ja) * 2003-04-28 2004-11-18 Sharp Corp 半導体装置およびその製造方法
JP2005026405A (ja) * 2003-07-01 2005-01-27 Sharp Corp 貫通電極構造およびその製造方法、半導体チップならびにマルチチップ半導体装置

Also Published As

Publication number Publication date
JP2006228947A (ja) 2006-08-31
WO2006087957A1 (ja) 2006-08-24
JP3880602B2 (ja) 2007-02-14
CN101120438B (zh) 2010-05-26
TW200701428A (en) 2007-01-01
CN101120438A (zh) 2008-02-06

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