TWI325158B - Split-gate metal-oxide-semiconductor device - Google Patents
Split-gate metal-oxide-semiconductor device Download PDFInfo
- Publication number
- TWI325158B TWI325158B TW093113007A TW93113007A TWI325158B TW I325158 B TWI325158 B TW I325158B TW 093113007 A TW093113007 A TW 093113007A TW 93113007 A TW93113007 A TW 93113007A TW I325158 B TWI325158 B TW I325158B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- source
- semiconductor layer
- end point
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 3
- 239000000344 soap Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 26
- 239000000463 material Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/439,863 US6710416B1 (en) | 2003-05-16 | 2003-05-16 | Split-gate metal-oxide-semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200509261A TW200509261A (en) | 2005-03-01 |
| TWI325158B true TWI325158B (en) | 2010-05-21 |
Family
ID=31978839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093113007A TWI325158B (en) | 2003-05-16 | 2004-05-07 | Split-gate metal-oxide-semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6710416B1 (enExample) |
| EP (1) | EP1478013A3 (enExample) |
| JP (1) | JP4791706B2 (enExample) |
| TW (1) | TWI325158B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI449176B (zh) * | 2010-12-10 | 2014-08-11 | Macronix Int Co Ltd | 具有分離閘極和超級連接結構之半導體元件 |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049669B2 (en) * | 2003-09-15 | 2006-05-23 | Infineon Technologies Ag | LDMOS transistor |
| US7304354B2 (en) * | 2004-02-17 | 2007-12-04 | Silicon Space Technology Corp. | Buried guard ring and radiation hardened isolation structures and fabrication methods |
| US8447077B2 (en) * | 2006-09-11 | 2013-05-21 | Validity Sensors, Inc. | Method and apparatus for fingerprint motion tracking using an in-line array |
| US8358815B2 (en) * | 2004-04-16 | 2013-01-22 | Validity Sensors, Inc. | Method and apparatus for two-dimensional finger motion tracking and control |
| US8175345B2 (en) | 2004-04-16 | 2012-05-08 | Validity Sensors, Inc. | Unitized ergonomic two-dimensional fingerprint motion tracking device and method |
| JP4836427B2 (ja) * | 2004-09-28 | 2011-12-14 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| DE102004049246A1 (de) * | 2004-10-01 | 2006-04-06 | Atmel Germany Gmbh | Lateraler DMOS-Transistor und Verfahren zu seiner Herstellung |
| US20060223293A1 (en) | 2005-04-01 | 2006-10-05 | Raytheon Company | Semiconductor devices having improved field plates |
| DE102006038874B4 (de) * | 2006-08-18 | 2011-02-10 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit gemeinsamen Bezugspotential über Deep-Trench-Isolation und Messanordnung |
| US20080185629A1 (en) * | 2007-02-01 | 2008-08-07 | Denso Corporation | Semiconductor device having variable operating information |
| US8290150B2 (en) * | 2007-05-11 | 2012-10-16 | Validity Sensors, Inc. | Method and system for electronically securing an electronic device using physically unclonable functions |
| US8276816B2 (en) * | 2007-12-14 | 2012-10-02 | Validity Sensors, Inc. | Smart card system with ergonomic fingerprint sensor and method of using |
| US8116540B2 (en) | 2008-04-04 | 2012-02-14 | Validity Sensors, Inc. | Apparatus and method for reducing noise in fingerprint sensing circuits |
| WO2009144641A1 (en) * | 2008-05-28 | 2009-12-03 | Nxp B.V. | Semiconductor device with dummy gate electrode and corresponding integrated circuit and manufacturing method |
| DE112009001794T5 (de) * | 2008-07-22 | 2012-01-26 | Validity Sensors, Inc. | System, Vorrichtung und Verfahren zum Sichern einer Vorrichtungskomponente |
| US8391568B2 (en) * | 2008-11-10 | 2013-03-05 | Validity Sensors, Inc. | System and method for improved scanning of fingerprint edges |
| US20100180136A1 (en) * | 2009-01-15 | 2010-07-15 | Validity Sensors, Inc. | Ultra Low Power Wake-On-Event Mode For Biometric Systems |
| US20100176892A1 (en) * | 2009-01-15 | 2010-07-15 | Validity Sensors, Inc. | Ultra Low Power Oscillator |
| US8600122B2 (en) * | 2009-01-15 | 2013-12-03 | Validity Sensors, Inc. | Apparatus and method for culling substantially redundant data in fingerprint sensing circuits |
| US20100208953A1 (en) * | 2009-02-17 | 2010-08-19 | Validity Sensors, Inc. | Illuminated Fingerprint Sensor and Method |
| US9336428B2 (en) * | 2009-10-30 | 2016-05-10 | Synaptics Incorporated | Integrated fingerprint sensor and display |
| US8331096B2 (en) | 2010-08-20 | 2012-12-11 | Validity Sensors, Inc. | Fingerprint acquisition expansion card apparatus |
| US8525261B2 (en) * | 2010-11-23 | 2013-09-03 | Macronix International Co., Ltd. | Semiconductor device having a split gate and a super-junction structure |
| JP5582030B2 (ja) * | 2010-12-28 | 2014-09-03 | 富士通セミコンダクター株式会社 | Ｍｏｓトランジスタおよびその製造方法 |
| US8538097B2 (en) | 2011-01-26 | 2013-09-17 | Validity Sensors, Inc. | User input utilizing dual line scanner apparatus and method |
| US8610206B2 (en) | 2011-02-18 | 2013-12-17 | Macronix International Co., Ltd. | Split-gate lateral diffused metal oxide semiconductor device |
| US9406580B2 (en) | 2011-03-16 | 2016-08-02 | Synaptics Incorporated | Packaging for fingerprint sensors and methods of manufacture |
| CN102394246B (zh) * | 2011-11-29 | 2017-12-22 | 上海华虹宏力半导体制造有限公司 | 可升级的横向双扩散金属氧化物半导体晶体管及制造方法 |
| US9251329B2 (en) | 2012-03-27 | 2016-02-02 | Synaptics Incorporated | Button depress wakeup and wakeup strategy |
| US9665762B2 (en) | 2013-01-11 | 2017-05-30 | Synaptics Incorporated | Tiered wakeup strategy |
| CN103500757B (zh) * | 2013-10-21 | 2017-03-08 | 苏州智瑞佳电子技术有限公司 | 具有肖特基源ldmos的半导体器件及制造方法 |
| EP3158587B1 (en) * | 2014-06-18 | 2022-03-30 | Intel Corporation | Extended-drain structures for high voltage field effect transistors |
| US10396166B2 (en) * | 2016-03-11 | 2019-08-27 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
| US10199496B2 (en) | 2016-03-11 | 2019-02-05 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
| US10418480B2 (en) | 2016-03-11 | 2019-09-17 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
| US10038058B2 (en) | 2016-05-07 | 2018-07-31 | Silicon Space Technology Corporation | FinFET device structure and method for forming same |
| CN110957349B (zh) * | 2018-09-27 | 2023-04-07 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
| US20200227552A1 (en) * | 2019-01-11 | 2020-07-16 | Vanguard International Semiconductor Corporation | Semiconductor device with dielectric neck support and method for manufacturing the same |
| US11552194B2 (en) | 2020-05-29 | 2023-01-10 | metaMOS Solutions Inc. | Low loss power device and method for fabricating thereof |
| US20220093740A1 (en) * | 2020-09-18 | 2022-03-24 | Qualcomm Incorporated | High-power field-effect transistor (fet) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| JP2667857B2 (ja) * | 1988-02-12 | 1997-10-27 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| JPH01248670A (ja) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | 不揮発性半導体記憶装置ならびにその動作方法および製造方法 |
| US5179032A (en) * | 1990-02-01 | 1993-01-12 | Quigg Fred L | Mosfet structure having reduced capacitance and method of forming same |
| JPH04313238A (ja) * | 1991-04-10 | 1992-11-05 | Oki Electric Ind Co Ltd | 半導体素子 |
| JPH06120493A (ja) * | 1992-10-06 | 1994-04-28 | Hitachi Ltd | 半導体装置とその製造方法 |
| KR960006004A (ko) * | 1994-07-25 | 1996-02-23 | 김주용 | 반도체 소자 및 그 제조방법 |
| US5714786A (en) * | 1996-10-31 | 1998-02-03 | Micron Technology, Inc. | Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors |
| US6087697A (en) * | 1997-10-31 | 2000-07-11 | Stmicroelectronics, Inc. | Radio frequency power MOSFET device having improved performance characteristics |
| US5918137A (en) | 1998-04-27 | 1999-06-29 | Spectrian, Inc. | MOS transistor with shield coplanar with gate electrode |
| US6051470A (en) * | 1999-01-15 | 2000-04-18 | Advanced Micro Devices, Inc. | Dual-gate MOSFET with channel potential engineering |
| US6097070A (en) * | 1999-02-16 | 2000-08-01 | International Business Machines Corporation | MOSFET structure and process for low gate induced drain leakage (GILD) |
| KR100282454B1 (ko) * | 1999-03-19 | 2001-02-15 | 김영환 | 트랜지스터의 구조 및 제조 방법 |
| SG165138A1 (en) * | 2000-07-12 | 2010-10-28 | Inst Of Microelectronics | A semiconductor device |
| US6461902B1 (en) * | 2000-07-18 | 2002-10-08 | Institute Of Microelectronics | RF LDMOS on partial SOI substrate |
-
2003
- 2003-05-16 US US10/439,863 patent/US6710416B1/en not_active Expired - Lifetime
-
2004
- 2004-05-05 EP EP04252609A patent/EP1478013A3/en not_active Withdrawn
- 2004-05-07 TW TW093113007A patent/TWI325158B/zh not_active IP Right Cessation
- 2004-05-14 JP JP2004144248A patent/JP4791706B2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI449176B (zh) * | 2010-12-10 | 2014-08-11 | Macronix Int Co Ltd | 具有分離閘極和超級連接結構之半導體元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4791706B2 (ja) | 2011-10-12 |
| US6710416B1 (en) | 2004-03-23 |
| TW200509261A (en) | 2005-03-01 |
| JP2004343118A (ja) | 2004-12-02 |
| EP1478013A2 (en) | 2004-11-17 |
| EP1478013A3 (en) | 2006-08-02 |
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