JP4791706B2 - 分割ゲート型金属酸化物半導体デバイス - Google Patents

分割ゲート型金属酸化物半導体デバイス Download PDF

Info

Publication number
JP4791706B2
JP4791706B2 JP2004144248A JP2004144248A JP4791706B2 JP 4791706 B2 JP4791706 B2 JP 4791706B2 JP 2004144248 A JP2004144248 A JP 2004144248A JP 2004144248 A JP2004144248 A JP 2004144248A JP 4791706 B2 JP4791706 B2 JP 4791706B2
Authority
JP
Japan
Prior art keywords
gate
source
semiconductor layer
high frequency
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004144248A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004343118A (ja
JP2004343118A5 (enExample
Inventor
シュ シュミン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems LLC filed Critical Agere Systems LLC
Publication of JP2004343118A publication Critical patent/JP2004343118A/ja
Publication of JP2004343118A5 publication Critical patent/JP2004343118A5/ja
Application granted granted Critical
Publication of JP4791706B2 publication Critical patent/JP4791706B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/023—Manufacture or treatment of FETs having insulated gates [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004144248A 2003-05-16 2004-05-14 分割ゲート型金属酸化物半導体デバイス Expired - Lifetime JP4791706B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/439,863 US6710416B1 (en) 2003-05-16 2003-05-16 Split-gate metal-oxide-semiconductor device
US10/439863 2003-05-16

Publications (3)

Publication Number Publication Date
JP2004343118A JP2004343118A (ja) 2004-12-02
JP2004343118A5 JP2004343118A5 (enExample) 2007-02-15
JP4791706B2 true JP4791706B2 (ja) 2011-10-12

Family

ID=31978839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004144248A Expired - Lifetime JP4791706B2 (ja) 2003-05-16 2004-05-14 分割ゲート型金属酸化物半導体デバイス

Country Status (4)

Country Link
US (1) US6710416B1 (enExample)
EP (1) EP1478013A3 (enExample)
JP (1) JP4791706B2 (enExample)
TW (1) TWI325158B (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049669B2 (en) * 2003-09-15 2006-05-23 Infineon Technologies Ag LDMOS transistor
US7304354B2 (en) * 2004-02-17 2007-12-04 Silicon Space Technology Corp. Buried guard ring and radiation hardened isolation structures and fabrication methods
US8447077B2 (en) * 2006-09-11 2013-05-21 Validity Sensors, Inc. Method and apparatus for fingerprint motion tracking using an in-line array
US8358815B2 (en) * 2004-04-16 2013-01-22 Validity Sensors, Inc. Method and apparatus for two-dimensional finger motion tracking and control
US8175345B2 (en) 2004-04-16 2012-05-08 Validity Sensors, Inc. Unitized ergonomic two-dimensional fingerprint motion tracking device and method
JP4836427B2 (ja) * 2004-09-28 2011-12-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
DE102004049246A1 (de) * 2004-10-01 2006-04-06 Atmel Germany Gmbh Lateraler DMOS-Transistor und Verfahren zu seiner Herstellung
US20060223293A1 (en) 2005-04-01 2006-10-05 Raytheon Company Semiconductor devices having improved field plates
DE102006038874B4 (de) * 2006-08-18 2011-02-10 Infineon Technologies Austria Ag Halbleitervorrichtung mit gemeinsamen Bezugspotential über Deep-Trench-Isolation und Messanordnung
US20080185629A1 (en) * 2007-02-01 2008-08-07 Denso Corporation Semiconductor device having variable operating information
US8290150B2 (en) * 2007-05-11 2012-10-16 Validity Sensors, Inc. Method and system for electronically securing an electronic device using physically unclonable functions
US8276816B2 (en) * 2007-12-14 2012-10-02 Validity Sensors, Inc. Smart card system with ergonomic fingerprint sensor and method of using
US8116540B2 (en) 2008-04-04 2012-02-14 Validity Sensors, Inc. Apparatus and method for reducing noise in fingerprint sensing circuits
WO2009144641A1 (en) * 2008-05-28 2009-12-03 Nxp B.V. Semiconductor device with dummy gate electrode and corresponding integrated circuit and manufacturing method
DE112009001794T5 (de) * 2008-07-22 2012-01-26 Validity Sensors, Inc. System, Vorrichtung und Verfahren zum Sichern einer Vorrichtungskomponente
US8391568B2 (en) * 2008-11-10 2013-03-05 Validity Sensors, Inc. System and method for improved scanning of fingerprint edges
US20100180136A1 (en) * 2009-01-15 2010-07-15 Validity Sensors, Inc. Ultra Low Power Wake-On-Event Mode For Biometric Systems
US20100176892A1 (en) * 2009-01-15 2010-07-15 Validity Sensors, Inc. Ultra Low Power Oscillator
US8600122B2 (en) * 2009-01-15 2013-12-03 Validity Sensors, Inc. Apparatus and method for culling substantially redundant data in fingerprint sensing circuits
US20100208953A1 (en) * 2009-02-17 2010-08-19 Validity Sensors, Inc. Illuminated Fingerprint Sensor and Method
US9336428B2 (en) * 2009-10-30 2016-05-10 Synaptics Incorporated Integrated fingerprint sensor and display
US8331096B2 (en) 2010-08-20 2012-12-11 Validity Sensors, Inc. Fingerprint acquisition expansion card apparatus
US8525261B2 (en) * 2010-11-23 2013-09-03 Macronix International Co., Ltd. Semiconductor device having a split gate and a super-junction structure
TWI449176B (zh) * 2010-12-10 2014-08-11 Macronix Int Co Ltd 具有分離閘極和超級連接結構之半導體元件
JP5582030B2 (ja) * 2010-12-28 2014-09-03 富士通セミコンダクター株式会社 Ｍｏｓトランジスタおよびその製造方法
US8538097B2 (en) 2011-01-26 2013-09-17 Validity Sensors, Inc. User input utilizing dual line scanner apparatus and method
US8610206B2 (en) 2011-02-18 2013-12-17 Macronix International Co., Ltd. Split-gate lateral diffused metal oxide semiconductor device
US9406580B2 (en) 2011-03-16 2016-08-02 Synaptics Incorporated Packaging for fingerprint sensors and methods of manufacture
CN102394246B (zh) * 2011-11-29 2017-12-22 上海华虹宏力半导体制造有限公司 可升级的横向双扩散金属氧化物半导体晶体管及制造方法
US9251329B2 (en) 2012-03-27 2016-02-02 Synaptics Incorporated Button depress wakeup and wakeup strategy
US9665762B2 (en) 2013-01-11 2017-05-30 Synaptics Incorporated Tiered wakeup strategy
CN103500757B (zh) * 2013-10-21 2017-03-08 苏州智瑞佳电子技术有限公司 具有肖特基源ldmos的半导体器件及制造方法
EP3158587B1 (en) * 2014-06-18 2022-03-30 Intel Corporation Extended-drain structures for high voltage field effect transistors
US10396166B2 (en) * 2016-03-11 2019-08-27 Mediatek Inc. Semiconductor device capable of high-voltage operation
US10199496B2 (en) 2016-03-11 2019-02-05 Mediatek Inc. Semiconductor device capable of high-voltage operation
US10418480B2 (en) 2016-03-11 2019-09-17 Mediatek Inc. Semiconductor device capable of high-voltage operation
US10038058B2 (en) 2016-05-07 2018-07-31 Silicon Space Technology Corporation FinFET device structure and method for forming same
CN110957349B (zh) * 2018-09-27 2023-04-07 世界先进积体电路股份有限公司 半导体装置及其制造方法
US20200227552A1 (en) * 2019-01-11 2020-07-16 Vanguard International Semiconductor Corporation Semiconductor device with dielectric neck support and method for manufacturing the same
US11552194B2 (en) 2020-05-29 2023-01-10 metaMOS Solutions Inc. Low loss power device and method for fabricating thereof
US20220093740A1 (en) * 2020-09-18 2022-03-24 Qualcomm Incorporated High-power field-effect transistor (fet)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
JP2667857B2 (ja) * 1988-02-12 1997-10-27 株式会社日立製作所 半導体装置およびその製造方法
JPH01248670A (ja) * 1988-03-30 1989-10-04 Toshiba Corp 不揮発性半導体記憶装置ならびにその動作方法および製造方法
US5179032A (en) * 1990-02-01 1993-01-12 Quigg Fred L Mosfet structure having reduced capacitance and method of forming same
JPH04313238A (ja) * 1991-04-10 1992-11-05 Oki Electric Ind Co Ltd 半導体素子
JPH06120493A (ja) * 1992-10-06 1994-04-28 Hitachi Ltd 半導体装置とその製造方法
KR960006004A (ko) * 1994-07-25 1996-02-23 김주용 반도체 소자 및 그 제조방법
US5714786A (en) * 1996-10-31 1998-02-03 Micron Technology, Inc. Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors
US6087697A (en) * 1997-10-31 2000-07-11 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
US5918137A (en) 1998-04-27 1999-06-29 Spectrian, Inc. MOS transistor with shield coplanar with gate electrode
US6051470A (en) * 1999-01-15 2000-04-18 Advanced Micro Devices, Inc. Dual-gate MOSFET with channel potential engineering
US6097070A (en) * 1999-02-16 2000-08-01 International Business Machines Corporation MOSFET structure and process for low gate induced drain leakage (GILD)
KR100282454B1 (ko) * 1999-03-19 2001-02-15 김영환 트랜지스터의 구조 및 제조 방법
SG165138A1 (en) * 2000-07-12 2010-10-28 Inst Of Microelectronics A semiconductor device
US6461902B1 (en) * 2000-07-18 2002-10-08 Institute Of Microelectronics RF LDMOS on partial SOI substrate

Also Published As

Publication number Publication date
TWI325158B (en) 2010-05-21
US6710416B1 (en) 2004-03-23
TW200509261A (en) 2005-03-01
JP2004343118A (ja) 2004-12-02
EP1478013A2 (en) 2004-11-17
EP1478013A3 (en) 2006-08-02

Similar Documents

Publication Publication Date Title
JP4791706B2 (ja) 分割ゲート型金属酸化物半導体デバイス
US6927453B2 (en) Metal-oxide-semiconductor device including a buried lightly-doped drain region
US7148540B2 (en) Graded conductive structure for use in a metal-oxide-semiconductor device
US7138690B2 (en) Shielding structure for use in a metal-oxide-semiconductor device
JP5334351B2 (ja) 改善された性能および信頼性を有する金属酸化物半導体デバイス
US8097512B2 (en) MOSFET having a JFET embedded as a body diode
US6084268A (en) Power MOSFET device having low on-resistance and method
US7576388B1 (en) Trench-gate LDMOS structures
JP5378635B2 (ja) シリコン・オン・インシュレータ内に形成された金属酸化膜半導体デバイス
US7126193B2 (en) Metal-oxide-semiconductor device with enhanced source electrode
US20120094457A1 (en) Sti-aligned ldmos drift implant to enhance manufacturability while optimizing rdson and safe operating area
US9660020B2 (en) Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same
JP2008514007A (ja) スタック状ヘテロドーピング周縁部及び徐々に変化するドリフト領域を備えた促進された表面電界低減化高耐圧ｐ型ｍｏｓデバイス
US20090014814A1 (en) Power semiconductor device having improved performance and method
US5432366A (en) P-I-N MOSFET for ULSI applications
CN100361315C (zh) 垂直dmos晶体管装置、集成电路及其制造方法
CN113745335A (zh) 绝缘体上覆硅上的射频放大器及其制造方法
KR20010064328A (ko) 인버스 ｔ형 ｌｄｄ 구조의 모스 트랜지스터의 제조방법
JPH09121053A (ja) 縦型の電界効果型トランジスタ及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061226

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061226

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100802

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101102

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110202

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20110202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110629

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110722

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140729

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4791706

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term