TWI323012B - Iii-nitride semiconductor fabrication - Google Patents
Iii-nitride semiconductor fabrication Download PDFInfo
- Publication number
- TWI323012B TWI323012B TW095136714A TW95136714A TWI323012B TW I323012 B TWI323012 B TW I323012B TW 095136714 A TW095136714 A TW 095136714A TW 95136714 A TW95136714 A TW 95136714A TW I323012 B TWI323012 B TW I323012B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- nitride
- nitride semiconductor
- manufacturing
- fabricating
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 150000004767 nitrides Chemical class 0.000 claims description 64
- 125000006850 spacer group Chemical group 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- -1 ceramide nitride Chemical class 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- SZZXSKFKZJTWOY-UHFFFAOYSA-N azanylidynesamarium Chemical compound [Sm]#N SZZXSKFKZJTWOY-UHFFFAOYSA-N 0.000 claims description 3
- 238000010586 diagram Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 235000009854 Cucurbita moschata Nutrition 0.000 claims description 2
- 235000009852 Cucurbita pepo Nutrition 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 235000020354 squash Nutrition 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims 4
- 239000012212 insulator Substances 0.000 claims 2
- YDNKGFDKKRUKPY-JHOUSYSJSA-N C16 ceramide Natural products CCCCCCCCCCCCCCCC(=O)N[C@@H](CO)[C@H](O)C=CCCCCCCCCCCCCC YDNKGFDKKRUKPY-JHOUSYSJSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 240000001980 Cucurbita pepo Species 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229940106189 ceramide Drugs 0.000 claims 1
- ZVEQCJWYRWKARO-UHFFFAOYSA-N ceramide Natural products CCCCCCCCCCCCCCC(O)C(=O)NC(CO)C(O)C=CCCC=C(C)CCCCCCCCC ZVEQCJWYRWKARO-UHFFFAOYSA-N 0.000 claims 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims 1
- VVGIYYKRAMHVLU-UHFFFAOYSA-N newbouldiamide Natural products CCCCCCCCCCCCCCCCCCCC(O)C(O)C(O)C(CO)NC(=O)CCCCCCCCCCCCCCCCC VVGIYYKRAMHVLU-UHFFFAOYSA-N 0.000 claims 1
- 239000004576 sand Substances 0.000 claims 1
- 241000894007 species Species 0.000 claims 1
- 150000003431 steroids Chemical class 0.000 claims 1
- 229910003468 tantalcarbide Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 description 12
- 239000011810 insulating material Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 240000004244 Cucurbita moschata Species 0.000 description 1
- 240000003183 Manihot esculenta Species 0.000 description 1
- 235000016735 Manihot esculenta subsp esculenta Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US72304005P | 2005-10-03 | 2005-10-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200725754A TW200725754A (en) | 2007-07-01 |
| TWI323012B true TWI323012B (en) | 2010-04-01 |
Family
ID=37906837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095136714A TWI323012B (en) | 2005-10-03 | 2006-10-03 | Iii-nitride semiconductor fabrication |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7399692B2 (ja) |
| JP (1) | JP5297806B2 (ja) |
| DE (1) | DE112006002487B4 (ja) |
| TW (1) | TWI323012B (ja) |
| WO (1) | WO2007041595A2 (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7915643B2 (en) * | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
| US8309987B2 (en) | 2008-07-15 | 2012-11-13 | Imec | Enhancement mode semiconductor device |
| US8624260B2 (en) * | 2010-01-30 | 2014-01-07 | National Semiconductor Corporation | Enhancement-mode GaN MOSFET with low leakage current and improved reliability |
| JP2012156332A (ja) * | 2011-01-26 | 2012-08-16 | Toshiba Corp | 半導体素子 |
| US8710511B2 (en) * | 2011-07-29 | 2014-04-29 | Northrop Grumman Systems Corporation | AIN buffer N-polar GaN HEMT profile |
| CN102290345B (zh) * | 2011-09-21 | 2013-04-03 | 西安电子科技大学 | 深亚微米栅长AlGaN/GaN HEMT制作方法 |
| WO2013126828A1 (en) | 2012-02-23 | 2013-08-29 | Sensor Electronic Technology, Inc. | Ohmic contact to semiconductor |
| CN106206695B (zh) * | 2015-05-07 | 2019-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | 降低注入损伤实现增强型hemt器件的方法及增强型hemt器件 |
| US9673311B1 (en) | 2016-06-14 | 2017-06-06 | Semiconductor Components Industries, Llc | Electronic device including a multiple channel HEMT |
| US9865721B1 (en) * | 2016-06-15 | 2018-01-09 | Qorvo Us, Inc. | High electron mobility transistor (HEMT) device and method of making the same |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59127871A (ja) * | 1983-01-13 | 1984-07-23 | Nec Corp | 半導体装置の製造方法 |
| JPH04340231A (ja) * | 1991-01-10 | 1992-11-26 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JPH10223901A (ja) * | 1996-12-04 | 1998-08-21 | Sony Corp | 電界効果型トランジスタおよびその製造方法 |
| JPH10294452A (ja) * | 1997-04-22 | 1998-11-04 | Sony Corp | ヘテロ接合電界効果トランジスタ |
| US6316793B1 (en) * | 1998-06-12 | 2001-11-13 | Cree, Inc. | Nitride based transistors on semi-insulating silicon carbide substrates |
| JP2000277724A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 電界効果トランジスタとそれを備えた半導体装置及びその製造方法 |
| JP4577460B2 (ja) * | 1999-04-01 | 2010-11-10 | ソニー株式会社 | 半導体素子およびその製造方法 |
| JP2001077353A (ja) * | 1999-06-30 | 2001-03-23 | Toshiba Corp | 高電子移動度トランジスタ及び電力増幅器 |
| EP1104031B1 (en) * | 1999-11-15 | 2012-04-11 | Panasonic Corporation | Nitride semiconductor laser diode and method of fabricating the same |
| JP2002093819A (ja) * | 2000-09-11 | 2002-03-29 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
| JP2002280571A (ja) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | ＧａＮ系ＨＥＭＴのシミュレーション装置 |
| US6723165B2 (en) * | 2001-04-13 | 2004-04-20 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating Group III nitride semiconductor substrate |
| WO2003009392A1 (fr) * | 2001-07-17 | 2003-01-30 | Kabushiki Kaisha Watanabe Shoko | Dispositif a semi-conducteur et son procede de fabrication et systeme d'application de ce dispositif |
| JP2003086608A (ja) * | 2001-09-14 | 2003-03-20 | Toshiba Corp | 電界効果トランジスタ及びその製造方法 |
| US6982204B2 (en) * | 2002-07-16 | 2006-01-03 | Cree, Inc. | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
| JP3853711B2 (ja) * | 2002-07-24 | 2006-12-06 | 日本電信電話株式会社 | 半導体装置の製造方法 |
| JP2005210105A (ja) * | 2003-12-26 | 2005-08-04 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
| US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
| US7247889B2 (en) * | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
| US20070023761A1 (en) * | 2005-07-26 | 2007-02-01 | Robbins Virginia M | Silicon carbon germanium (SiCGe) substrate for a group III nitride-based device |
| US7777217B2 (en) * | 2005-12-12 | 2010-08-17 | Kyma Technologies, Inc. | Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same |
-
2006
- 2006-09-29 US US11/537,304 patent/US7399692B2/en active Active
- 2006-10-03 JP JP2008533784A patent/JP5297806B2/ja not_active Expired - Fee Related
- 2006-10-03 DE DE112006002487T patent/DE112006002487B4/de not_active Expired - Fee Related
- 2006-10-03 WO PCT/US2006/038678 patent/WO2007041595A2/en active Application Filing
- 2006-10-03 TW TW095136714A patent/TWI323012B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE112006002487T5 (de) | 2008-07-24 |
| US20070077745A1 (en) | 2007-04-05 |
| US7399692B2 (en) | 2008-07-15 |
| WO2007041595A2 (en) | 2007-04-12 |
| WO2007041595A3 (en) | 2009-04-23 |
| JP5297806B2 (ja) | 2013-09-25 |
| JP2009515320A (ja) | 2009-04-09 |
| DE112006002487B4 (de) | 2011-02-24 |
| TW200725754A (en) | 2007-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |