TWI320515B - Patternable low dielectric constant materials and their use in ulsi interconnection - Google Patents
Patternable low dielectric constant materials and their use in ulsi interconnectionInfo
- Publication number
- TWI320515B TWI320515B TW93100144A TW93100144A TWI320515B TW I320515 B TWI320515 B TW I320515B TW 93100144 A TW93100144 A TW 93100144A TW 93100144 A TW93100144 A TW 93100144A TW I320515 B TWI320515 B TW I320515B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric constant
- low dielectric
- constant materials
- patternable low
- ulsi
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
- H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Silicon Polymers (AREA)
- Materials For Photolithography (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/338,945 US7041748B2 (en) | 2003-01-08 | 2003-01-08 | Patternable low dielectric constant materials and their use in ULSI interconnection |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200508803A TW200508803A (en) | 2005-03-01 |
TWI320515B true TWI320515B (en) | 2010-02-11 |
Family
ID=32711012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93100144A TWI320515B (en) | 2003-01-08 | 2004-01-05 | Patternable low dielectric constant materials and their use in ulsi interconnection |
Country Status (4)
Families Citing this family (117)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7261992B2 (en) * | 2000-12-21 | 2007-08-28 | International Business Machines Corporation | Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions |
TWI288443B (en) | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
US7507783B2 (en) * | 2003-02-24 | 2009-03-24 | Brewer Science Inc. | Thermally curable middle layer comprising polyhedral oligomeric silsesouioxanes for 193-nm trilayer resist process |
US7098149B2 (en) * | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
TWI240959B (en) | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
JP4734832B2 (ja) * | 2003-05-14 | 2011-07-27 | ナガセケムテックス株式会社 | 光素子用封止材 |
TW200523298A (en) * | 2003-08-04 | 2005-07-16 | Honeywell Int Inc | Coating composition optimization for via fill and photolithography applications and methods of preparation thereof |
JP5102428B2 (ja) * | 2003-11-25 | 2012-12-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 導波路組成物およびこれから形成された導波路 |
KR100586165B1 (ko) * | 2003-12-30 | 2006-06-07 | 동부일렉트로닉스 주식회사 | 바닥 반사 방지 코팅 방법 |
US7355384B2 (en) * | 2004-04-08 | 2008-04-08 | International Business Machines Corporation | Apparatus, method, and computer program product for monitoring and controlling a microcomputer using a single existing pin |
US7629272B2 (en) * | 2004-06-07 | 2009-12-08 | Axcelis Technologies, Inc. | Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics |
US7563828B2 (en) * | 2004-07-16 | 2009-07-21 | Alcatel-Lucent Usa Inc. | Solid state proton conductor system derived from hybrid composite inorganic-organic multicomponent material |
JP2006156602A (ja) * | 2004-11-26 | 2006-06-15 | Asahi Kasei Corp | 絶縁膜 |
US7985677B2 (en) * | 2004-11-30 | 2011-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7696625B2 (en) * | 2004-11-30 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7732349B2 (en) * | 2004-11-30 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of insulating film and semiconductor device |
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
US7399581B2 (en) * | 2005-02-24 | 2008-07-15 | International Business Machines Corporation | Photoresist topcoat for a photolithographic process |
US8012673B1 (en) * | 2005-03-01 | 2011-09-06 | Spansion Llc | Processing a copolymer to form a polymer memory cell |
JP4450214B2 (ja) * | 2005-03-11 | 2010-04-14 | セイコーエプソン株式会社 | 有機薄膜トランジスタ、電子デバイスおよび電子機器 |
JP4775561B2 (ja) * | 2005-04-01 | 2011-09-21 | 信越化学工業株式会社 | シルセスキオキサン系化合物混合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法 |
US7960442B2 (en) | 2005-04-20 | 2011-06-14 | International Business Machines Corporation | Nanoporous media templated from unsymmetrical amphiphilic porogens |
US7482389B2 (en) * | 2005-04-20 | 2009-01-27 | International Business Machines Corporation | Nanoporous media with lamellar structures |
US7723438B2 (en) * | 2005-04-28 | 2010-05-25 | International Business Machines Corporation | Surface-decorated polymeric amphiphile porogens for the templation of nanoporous materials |
US7224050B2 (en) * | 2005-05-25 | 2007-05-29 | Intel Corporation | Plastic materials including dendrimers or hyperbranched polymers for integrated circuit packaging |
JP4602842B2 (ja) * | 2005-06-07 | 2010-12-22 | 東京応化工業株式会社 | 反射防止膜形成用組成物、それを用いた反射防止膜 |
US7459183B2 (en) * | 2005-07-27 | 2008-12-02 | International Business Machines Corporation | Method of forming low-K interlevel dielectric layers and structures |
JP4692136B2 (ja) * | 2005-08-08 | 2011-06-01 | 東レ株式会社 | 感光性ペースト組成物およびそれを用いたフィールドエミッションディスプレイ部材 |
US7449538B2 (en) * | 2005-12-30 | 2008-11-11 | Hynix Semiconductor Inc. | Hard mask composition and method for manufacturing semiconductor device |
US7468330B2 (en) | 2006-04-05 | 2008-12-23 | International Business Machines Corporation | Imprint process using polyhedral oligomeric silsesquioxane based imprint materials |
JP2007293159A (ja) * | 2006-04-27 | 2007-11-08 | Asahi Kasei Corp | 感光性樹脂組成物及びシルセスキオキサン重合体 |
US8945808B2 (en) * | 2006-04-28 | 2015-02-03 | International Business Machines Corporation | Self-topcoating resist for photolithography |
US7704670B2 (en) | 2006-06-22 | 2010-04-27 | Az Electronic Materials Usa Corp. | High silicon-content thin film thermosets |
US8148043B2 (en) * | 2006-06-28 | 2012-04-03 | Dow Corning Corporation | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
JP5085649B2 (ja) * | 2006-06-28 | 2012-11-28 | ダウ コーニング コーポレーション | 電子吸引基を有する塩基性添加剤を含有するシルセスキオキサン樹脂システム |
US7927664B2 (en) * | 2006-08-28 | 2011-04-19 | International Business Machines Corporation | Method of step-and-flash imprint lithography |
JP4509080B2 (ja) | 2006-09-28 | 2010-07-21 | 信越化学工業株式会社 | シルセスキオキサン系化合物混合物及び加水分解性シラン化合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法及び基板の加工方法 |
US8053375B1 (en) * | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
US8026040B2 (en) * | 2007-02-20 | 2011-09-27 | Az Electronic Materials Usa Corp. | Silicone coating composition |
US7736837B2 (en) * | 2007-02-20 | 2010-06-15 | Az Electronic Materials Usa Corp. | Antireflective coating composition based on silicon polymer |
EP2132253A1 (en) * | 2007-02-26 | 2009-12-16 | AZ Electronic Materials USA Corp. | Process for making siloxane polymers |
JP2010519398A (ja) * | 2007-02-27 | 2010-06-03 | エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション | ケイ素に基づく反射防止膜用組成物 |
JP4963254B2 (ja) * | 2007-03-30 | 2012-06-27 | 東京応化工業株式会社 | ナノインプリント用の膜形成組成物、並びに構造体の製造方法及び構造体 |
US8084765B2 (en) * | 2007-05-07 | 2011-12-27 | Xerox Corporation | Electronic device having a dielectric layer |
US7867689B2 (en) * | 2007-05-18 | 2011-01-11 | International Business Machines Corporation | Method of use for photopatternable dielectric materials for BEOL applications |
US8470516B2 (en) * | 2007-05-18 | 2013-06-25 | International Business Machines Corporation | Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles |
US7709370B2 (en) | 2007-09-20 | 2010-05-04 | International Business Machines Corporation | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures |
US8084862B2 (en) * | 2007-09-20 | 2011-12-27 | International Business Machines Corporation | Interconnect structures with patternable low-k dielectrics and method of fabricating same |
US8618663B2 (en) | 2007-09-20 | 2013-12-31 | International Business Machines Corporation | Patternable dielectric film structure with improved lithography and method of fabricating same |
KR100936998B1 (ko) * | 2007-10-19 | 2010-01-15 | 에스화인켐 주식회사 | 감광성 폴리실세스퀴옥산 수지 조성물 및 이를 이용한박막의 패턴 형성 방법 |
KR101800015B1 (ko) * | 2007-12-10 | 2017-11-21 | 카네카 코포레이션 | 알칼리 현상성을 갖는 경화성 조성물 및 그것을 사용한 절연성 박막 및 박막 트랜지스터 |
US20090174036A1 (en) * | 2008-01-04 | 2009-07-09 | International Business Machines Corporation | Plasma curing of patterning materials for aggressively scaled features |
US8476758B2 (en) | 2008-01-09 | 2013-07-02 | International Business Machines Corporation | Airgap-containing interconnect structure with patternable low-k material and method of fabricating |
US7977256B2 (en) * | 2008-03-06 | 2011-07-12 | Tokyo Electron Limited | Method for removing a pore-generating material from an uncured low-k dielectric film |
US8029971B2 (en) * | 2008-03-13 | 2011-10-04 | International Business Machines Corporation | Photopatternable dielectric materials for BEOL applications and methods for use |
WO2010038767A1 (ja) | 2008-10-02 | 2010-04-08 | 株式会社カネカ | 光硬化性組成物および硬化物 |
EP2189846B1 (en) * | 2008-11-19 | 2015-04-22 | Rohm and Haas Electronic Materials LLC | Process for photolithography applying a photoresist composition comprising a block copolymer |
US8227336B2 (en) * | 2009-01-20 | 2012-07-24 | International Business Machines Corporation | Structure with self aligned resist layer on an interconnect surface and method of making same |
US8168691B2 (en) * | 2009-02-09 | 2012-05-01 | International Business Machines Corporation | Vinyl ether resist formulations for imprint lithography and processes of use |
KR101715343B1 (ko) * | 2009-03-11 | 2017-03-14 | 주식회사 동진쎄미켐 | 반도체 소자의 미세 패턴 형성 방법 |
US8728710B2 (en) * | 2009-03-31 | 2014-05-20 | Sam Xunyun Sun | Photo-imageable hardmask with dual tones for microphotolithography |
US8911932B2 (en) * | 2009-04-13 | 2014-12-16 | Sam Xunyun Sun | Photo-imageable hardmask with positive tone for microphotolithography |
US8298937B2 (en) * | 2009-06-12 | 2012-10-30 | International Business Machines Corporation | Interconnect structure fabricated without dry plasma etch processing |
US8519540B2 (en) | 2009-06-16 | 2013-08-27 | International Business Machines Corporation | Self-aligned dual damascene BEOL structures with patternable low- K material and methods of forming same |
US8659115B2 (en) * | 2009-06-17 | 2014-02-25 | International Business Machines Corporation | Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating |
US8168109B2 (en) * | 2009-08-21 | 2012-05-01 | International Business Machines Corporation | Stabilizers for vinyl ether resist formulations for imprint lithography |
US8163658B2 (en) * | 2009-08-24 | 2012-04-24 | International Business Machines Corporation | Multiple patterning using improved patternable low-k dielectric materials |
KR101666097B1 (ko) * | 2009-08-27 | 2016-10-13 | 삼성전자 주식회사 | 폴리우레탄 발포체 조성물 및 이를 사용하여 제조된 폴리우레탄 발포체 |
JP5381508B2 (ja) * | 2009-08-27 | 2014-01-08 | Jsr株式会社 | ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン |
US8431670B2 (en) * | 2009-08-31 | 2013-04-30 | International Business Machines Corporation | Photo-patternable dielectric materials and formulations and methods of use |
US8202783B2 (en) | 2009-09-29 | 2012-06-19 | International Business Machines Corporation | Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication |
US8377631B2 (en) * | 2009-10-06 | 2013-02-19 | International Business Machines Corporation | Planarization over topography with molecular glass materials |
US8389663B2 (en) * | 2009-10-08 | 2013-03-05 | International Business Machines Corporation | Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof |
US8637395B2 (en) | 2009-11-16 | 2014-01-28 | International Business Machines Corporation | Methods for photo-patternable low-k (PPLK) integration with curing after pattern transfer |
US8367540B2 (en) * | 2009-11-19 | 2013-02-05 | International Business Machines Corporation | Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same |
US8642252B2 (en) | 2010-03-10 | 2014-02-04 | International Business Machines Corporation | Methods for fabrication of an air gap-containing interconnect structure |
US8896120B2 (en) | 2010-04-27 | 2014-11-25 | International Business Machines Corporation | Structures and methods for air gap integration |
US8241992B2 (en) | 2010-05-10 | 2012-08-14 | International Business Machines Corporation | Method for air gap interconnect integration using photo-patternable low k material |
US8373271B2 (en) | 2010-05-27 | 2013-02-12 | International Business Machines Corporation | Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication |
US8334203B2 (en) | 2010-06-11 | 2012-12-18 | International Business Machines Corporation | Interconnect structure and method of fabricating |
US8475667B2 (en) | 2010-06-22 | 2013-07-02 | International Business Machines Corporation | Method of patterning photosensitive material on a substrate containing a latent acid generator |
US8449781B2 (en) | 2010-06-22 | 2013-05-28 | International Business Machines Corporation | Selective etch back process for carbon nanotubes intergration |
US8853856B2 (en) | 2010-06-22 | 2014-10-07 | International Business Machines Corporation | Methodology for evaluation of electrical characteristics of carbon nanotubes |
CN101880374B (zh) * | 2010-07-09 | 2011-11-30 | 中南民族大学 | 一种硅骨架超支化环氧树脂及其制备方法 |
US8354339B2 (en) | 2010-07-20 | 2013-01-15 | International Business Machines Corporation | Methods to form self-aligned permanent on-chip interconnect structures |
US8232198B2 (en) | 2010-08-05 | 2012-07-31 | International Business Machines Corporation | Self-aligned permanent on-chip interconnect structure formed by pitch splitting |
JP2012094726A (ja) * | 2010-10-28 | 2012-05-17 | Fujitsu Ltd | 電界効果トランジスタ及びその製造方法 |
US8623447B2 (en) * | 2010-12-01 | 2014-01-07 | Xerox Corporation | Method for coating dielectric composition for fabricating thin-film transistors |
US8441006B2 (en) * | 2010-12-23 | 2013-05-14 | Intel Corporation | Cyclic carbosilane dielectric films |
US8617941B2 (en) | 2011-01-16 | 2013-12-31 | International Business Machines Corporation | High-speed graphene transistor and method of fabrication by patternable hard mask materials |
KR101957746B1 (ko) * | 2011-03-29 | 2019-03-15 | 다우 실리콘즈 코포레이션 | 디바이스 제조에 사용하기 위한 광-패턴화가능하고 현상가능한 실세스퀴옥산 수지 |
US8900988B2 (en) | 2011-04-15 | 2014-12-02 | International Business Machines Corporation | Method for forming self-aligned airgap interconnect structures |
US8890318B2 (en) | 2011-04-15 | 2014-11-18 | International Business Machines Corporation | Middle of line structures |
US9054160B2 (en) | 2011-04-15 | 2015-06-09 | International Business Machines Corporation | Interconnect structure and method for fabricating on-chip interconnect structures by image reversal |
US8822137B2 (en) * | 2011-08-03 | 2014-09-02 | International Business Machines Corporation | Self-aligned fine pitch permanent on-chip interconnect structures and method of fabrication |
US8614047B2 (en) * | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
US20130062732A1 (en) | 2011-09-08 | 2013-03-14 | International Business Machines Corporation | Interconnect structures with functional components and methods for fabrication |
JP2013149861A (ja) * | 2012-01-20 | 2013-08-01 | Sumitomo Chemical Co Ltd | 有機薄膜トランジスタ絶縁層材料 |
US8871425B2 (en) * | 2012-02-09 | 2014-10-28 | Az Electronic Materials (Luxembourg) S.A.R.L. | Low dielectric photoimageable compositions and electronic devices made therefrom |
US9087753B2 (en) | 2012-05-10 | 2015-07-21 | International Business Machines Corporation | Printed transistor and fabrication method |
KR102148246B1 (ko) * | 2012-07-04 | 2020-08-26 | 가부시키가이샤 가네카 | 포지티브형 감광성 조성물, 박막 트랜지스터 및 화합물 |
JP6086739B2 (ja) * | 2013-01-21 | 2017-03-01 | 東京応化工業株式会社 | 絶縁膜形成用組成物、絶縁膜の製造方法、及び絶縁膜 |
CN103214510B (zh) * | 2013-04-10 | 2015-06-24 | 吉林大学 | 一种八羟基笼形倍半硅氧烷单体及其制备方法 |
WO2015064310A1 (ja) * | 2013-10-30 | 2015-05-07 | 日産化学工業株式会社 | シルセスキオキサン化合物及び変性シリコーン化合物を含むインプリント材料 |
JP6323225B2 (ja) | 2013-11-01 | 2018-05-16 | セントラル硝子株式会社 | ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品 |
CN103579102A (zh) * | 2013-11-07 | 2014-02-12 | 复旦大学 | 一种具有优异力学性能的低介电常数薄膜的制备方法 |
CN103613611A (zh) * | 2013-12-06 | 2014-03-05 | 吉林大学 | 一种具有十六羟基的笼形倍半硅氧烷及其制备方法 |
JP6260579B2 (ja) * | 2015-05-01 | 2018-01-17 | 信越化学工業株式会社 | フルオロポリエーテル基含有ポリマー変性シラン、表面処理剤及び物品 |
KR102460463B1 (ko) * | 2015-06-22 | 2022-10-31 | 인텔 코포레이션 | BEOL(Back End of Line) 인터커넥트를 위한 상향식 가교 결합을 사용하는 유전체에 의한 이미지 톤 반전 |
WO2017056888A1 (ja) * | 2015-09-30 | 2017-04-06 | 富士フイルム株式会社 | パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物 |
CN105254661A (zh) * | 2015-10-23 | 2016-01-20 | 航天材料及工艺研究所 | 八酚羟基笼形低聚多面体倍半硅氧烷及其制备方法 |
CN108780777B (zh) * | 2016-02-02 | 2023-02-17 | 东京毅力科创株式会社 | 利用选择性沉积对金属和通孔进行自对准 |
KR102395936B1 (ko) * | 2016-06-16 | 2022-05-11 | 다우 실리콘즈 코포레이션 | 규소-풍부 실세스퀴옥산 수지 |
KR102242545B1 (ko) * | 2017-09-27 | 2021-04-19 | 주식회사 엘지화학 | 항균성 고분자 코팅 조성물 및 항균성 고분자 필름 |
US10573687B2 (en) | 2017-10-31 | 2020-02-25 | International Business Machines Corporation | Magnetic random access memory with permanent photo-patternable low-K dielectric |
US10950549B2 (en) | 2018-11-16 | 2021-03-16 | International Business Machines Corporation | ILD gap fill for memory device stack array |
CN116547290A (zh) * | 2020-11-03 | 2023-08-04 | Oti照明公司 | 用于形成图案化涂层的含硅化合物和包含该化合物的器件 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6080851A (ja) | 1983-10-11 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | パタ−ン形成用材料及びパタ−ン形成方法 |
US5290899A (en) * | 1988-09-22 | 1994-03-01 | Tosoh Corporation | Photosensitive material having a silicon-containing polymer |
DE69300616T2 (de) * | 1992-04-30 | 1996-05-30 | Ibm | Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie. |
US5385804A (en) * | 1992-08-20 | 1995-01-31 | International Business Machines Corporation | Silicon containing negative resist for DUV, I-line or E-beam lithography comprising an aromatic azide side group in the polysilsesquioxane polymer |
US5338818A (en) * | 1992-09-10 | 1994-08-16 | International Business Machines Corporation | Silicon containing positive resist for DUV lithography |
WO1997011695A1 (en) * | 1995-09-28 | 1997-04-03 | Merck Sharp & Dohme Limited | Substituted indolylpropyl-piperazine derivatives as 5-ht1dalpha agonists |
JP3499032B2 (ja) * | 1995-02-02 | 2004-02-23 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物、その硬化方法及びパターン形成方法 |
JP3628098B2 (ja) * | 1996-03-29 | 2005-03-09 | ダウ コーニング アジア株式会社 | 放射線硬化性組成物およびこれを用いた硬化物パターンの製造方法 |
JPH09268228A (ja) * | 1996-04-01 | 1997-10-14 | Dow Corning Asia Ltd | 紫外線硬化性組成物およびこれを用いた硬化物パターンの形成方法 |
US5861235A (en) * | 1996-06-26 | 1999-01-19 | Dow Corning Asia, Ltd. | Ultraviolet-curable composition and method for patterning the cured product therefrom |
JPH1010741A (ja) * | 1996-06-27 | 1998-01-16 | Dow Corning Asia Kk | 紫外線硬化性ポリシロキサン組成物およびこれを用いた硬化物パターンの製造方法 |
EP0860462A3 (en) * | 1997-02-24 | 1999-04-21 | Dow Corning Toray Silicone Company Limited | Composition and method for the formation of silica thin films |
US5962067A (en) * | 1997-09-09 | 1999-10-05 | Lucent Technologies Inc. | Method for coating an article with a ladder siloxane polymer and coated article |
US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
US6187505B1 (en) * | 1999-02-02 | 2001-02-13 | International Business Machines Corporation | Radiation sensitive silicon-containing resists |
JP4286374B2 (ja) * | 1999-03-30 | 2009-06-24 | 新日鐵化学株式会社 | シリコーン樹脂及びこれを含有する感光性樹脂組成物 |
JP4270708B2 (ja) * | 1999-04-23 | 2009-06-03 | 富士通株式会社 | ケイ素含有ポリマ、その製造方法、それを用いたレジスト組成物、パターン形成方法および電子デバイスの製造方法 |
US6420441B1 (en) * | 1999-10-01 | 2002-07-16 | Shipley Company, L.L.C. | Porous materials |
US6472076B1 (en) * | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
US6107357A (en) * | 1999-11-16 | 2000-08-22 | International Business Machines Corporatrion | Dielectric compositions and method for their manufacture |
US6531260B2 (en) * | 2000-04-07 | 2003-03-11 | Jsr Corporation | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition |
US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US6420084B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Mask-making using resist having SIO bond-containing polymer |
US6271273B1 (en) * | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
US6576345B1 (en) * | 2000-11-30 | 2003-06-10 | Novellus Systems Inc | Dielectric films with low dielectric constants |
DE10295874B4 (de) * | 2001-01-24 | 2006-11-16 | Asahi Kasei Kabushiki Kaisha | Eine Siliciumverbindung enthaltende Zusammensetzung auf Basis von Polyphenylenether und ihre Verwendung |
US6653045B2 (en) * | 2001-02-16 | 2003-11-25 | International Business Machines Corporation | Radiation sensitive silicon-containing negative resists and use thereof |
TW594416B (en) * | 2001-05-08 | 2004-06-21 | Shipley Co Llc | Photoimageable composition |
US7244549B2 (en) * | 2001-08-24 | 2007-07-17 | Jsr Corporation | Pattern forming method and bilayer film |
US6873026B1 (en) * | 2002-03-04 | 2005-03-29 | Novellus Systems, Inc. | Inhomogeneous materials having physical properties decoupled from desired functions |
US6774031B2 (en) * | 2002-12-17 | 2004-08-10 | Texas Instruments Incorporated | Method of forming dual-damascene structure |
US6762501B1 (en) * | 2003-04-14 | 2004-07-13 | Texas Instruments Incorporated | Low stress integrated circuit copper interconnect structures |
-
2003
- 2003-01-08 US US10/338,945 patent/US7041748B2/en not_active Expired - Lifetime
- 2003-12-08 KR KR1020030088568A patent/KR100562238B1/ko not_active IP Right Cessation
- 2003-12-18 JP JP2003421691A patent/JP3935874B2/ja not_active Expired - Lifetime
-
2004
- 2004-01-05 TW TW93100144A patent/TWI320515B/zh not_active IP Right Cessation
-
2005
- 2005-12-21 US US11/314,307 patent/US7306853B2/en not_active Expired - Fee Related
-
2007
- 2007-11-01 US US11/933,530 patent/US7714079B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7306853B2 (en) | 2007-12-11 |
KR20040063769A (ko) | 2004-07-14 |
US20060105181A1 (en) | 2006-05-18 |
US7714079B2 (en) | 2010-05-11 |
US20080063880A1 (en) | 2008-03-13 |
JP2004212983A (ja) | 2004-07-29 |
US20040137241A1 (en) | 2004-07-15 |
TW200508803A (en) | 2005-03-01 |
US7041748B2 (en) | 2006-05-09 |
JP3935874B2 (ja) | 2007-06-27 |
KR100562238B1 (ko) | 2006-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI320515B (en) | Patternable low dielectric constant materials and their use in ulsi interconnection | |
AU2003293376A1 (en) | Anti-angiogenic compounds and their use in cancer treatment | |
IL227988A0 (en) | Use of calcitonin in osteoarthritis | |
EP1662993A4 (en) | METHODS AND APPARATUS FOR BIOIMPEDANCE | |
AU2003284242A1 (en) | Methods and compositions for use in treating cancer | |
TWI349551B (en) | Thiophenepyrimidinone derivatives and their use in therapy | |
PL379553A1 (pl) | Ligandy receptora waniloidowego oraz ich zastosowanie w leczeniu | |
IL172826A0 (en) | Quinoline derivates and their use in therapy | |
AU2003234336A8 (en) | Methods and compositions for use in preparing sirnas | |
IL171902A0 (en) | Compositions comprising gastrin compounds and their use in diabetes | |
AU2003226498A8 (en) | Rhenium compounds and their use in electroluminescent vorrichtungen | |
EP1700627A4 (en) | SYSTEM FOR PLAYING CARDS AND CARDS USED IN THIS SYSTEM | |
GB0319500D0 (en) | Particle-size reduction apparatus,and use thereof | |
GB0229515D0 (en) | Improvements in radar apparatus | |
EP1707312A4 (en) | POLISHING METHOD AND POLISHING FOIL USED IN SUCH A POLISHING METHOD | |
SG110107A1 (en) | Compound and use in treatment | |
SG122788A1 (en) | Ground improving method and apparatus used in the method | |
GB0318546D0 (en) | Quinoxalinones and their use | |
EP1583501A4 (en) | NEW COMPOSITIONS AND METHOD FOR CARCINOMA | |
AU2003280648A1 (en) | Cosmetics excellent in texture and oil-dispersibility | |
PL379145A1 (pl) | Kompozycje i sposoby obejmujące związki gastryny | |
GB2423657B (en) | Radar apparatus and similar apparatus | |
AU2003209459A1 (en) | Protein-protein interactions in human tumours involving bcmp-7 and bcmp-11 | |
TW585206U (en) | Quake-absorbing structure used in RC structure | |
GB0318162D0 (en) | Polishes and their uses |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |