DE69300616T2 - Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie. - Google Patents
Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie.Info
- Publication number
- DE69300616T2 DE69300616T2 DE69300616T DE69300616T DE69300616T2 DE 69300616 T2 DE69300616 T2 DE 69300616T2 DE 69300616 T DE69300616 T DE 69300616T DE 69300616 T DE69300616 T DE 69300616T DE 69300616 T2 DE69300616 T2 DE 69300616T2
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- material containing
- photoresist material
- positive photoresist
- containing silicone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/38—Polysiloxanes modified by chemical after-treatment
- C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
- C08G77/392—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/38—Polysiloxanes modified by chemical after-treatment
- C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
- C08G77/388—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87627792A | 1992-04-30 | 1992-04-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69300616D1 DE69300616D1 (de) | 1995-11-16 |
DE69300616T2 true DE69300616T2 (de) | 1996-05-30 |
Family
ID=25367336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69300616T Expired - Fee Related DE69300616T2 (de) | 1992-04-30 | 1993-03-23 | Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5422223A (de) |
EP (1) | EP0568476B1 (de) |
JP (1) | JP2744875B2 (de) |
DE (1) | DE69300616T2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR950002874B1 (ko) * | 1990-06-25 | 1995-03-27 | 마쯔시다덴시고오교오 가부시기가이샤 | 광 또는 방사선감응성 조성물과 패턴형성방법과 포토마스크의 제조방법 및 반도체 |
JP2547944B2 (ja) * | 1992-09-30 | 1996-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法 |
US5397741A (en) * | 1993-03-29 | 1995-03-14 | International Business Machines Corporation | Process for metallized vias in polyimide |
US5538832A (en) * | 1993-12-16 | 1996-07-23 | Mitsubishi Gas Chemical Company, Inc. | Developing solution for producing printed circuit boards and a process for producing printed circuit boards wherein the developing solution comprises a quaternary ammonium hydroxide and a quaternary ammonium carbonate |
ES2146128B1 (es) * | 1995-03-31 | 2001-03-16 | Consejo Superior Investigacion | Procedimiento de fotoenmascaramiento de poliimidas fotosensibles con compuestos organometalicos para procesos fotolitograficos en tecnologia de silicio. |
JPH09139368A (ja) * | 1995-11-14 | 1997-05-27 | Sony Corp | 化学的機械研磨方法 |
US5851927A (en) * | 1997-08-29 | 1998-12-22 | Motorola, Inc. | Method of forming a semiconductor device by DUV resist patterning |
CA2338523A1 (en) | 1998-08-18 | 2000-03-02 | 3M Innovative Properties Company | Polymers having silicon-containing acetal or ketal functional groups |
US6087064A (en) * | 1998-09-03 | 2000-07-11 | International Business Machines Corporation | Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method |
US6251788B1 (en) * | 1999-05-03 | 2001-06-26 | Winbond Electronics Corp. | Method of integrated circuit polishing without dishing effects |
US6890448B2 (en) * | 1999-06-11 | 2005-05-10 | Shipley Company, L.L.C. | Antireflective hard mask compositions |
JP4017795B2 (ja) * | 1999-08-27 | 2007-12-05 | 富士フイルム株式会社 | 光波長変換素子およびその作製方法 |
US6420084B1 (en) | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Mask-making using resist having SIO bond-containing polymer |
US6743885B2 (en) * | 2001-07-31 | 2004-06-01 | Sumitomo Chemical Company, Limited | Resin composition for intermediate layer of three-layer resist |
JP4373082B2 (ja) | 2001-12-28 | 2009-11-25 | 富士通株式会社 | アルカリ可溶性シロキサン重合体、ポジ型レジスト組成物、レジストパターン及びその製造方法、並びに、電子回路装置及びその製造方法 |
US7041748B2 (en) * | 2003-01-08 | 2006-05-09 | International Business Machines Corporation | Patternable low dielectric constant materials and their use in ULSI interconnection |
JP4432470B2 (ja) * | 2003-11-25 | 2010-03-17 | 株式会社デンソー | 半導体装置 |
JP5412037B2 (ja) * | 2004-12-17 | 2014-02-12 | ダウ・コーニング・コーポレイション | シロキサン樹脂、シロキサン樹脂の調製方法および抗反射コーティング組成物 |
DE602005008100D1 (de) | 2004-12-17 | 2008-08-21 | Dow Corning | Verfahren zur ausbildung einer antireflexionsbeschichtung |
US20060231930A1 (en) * | 2005-04-19 | 2006-10-19 | Hitachi Global Storage Technologies Netherlands B.V. | Heat resistant photomask for high temperature fabrication processes |
EP1762895B1 (de) * | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflex-Zusammensetzungen für Hartmasken |
JP4881396B2 (ja) | 2006-02-13 | 2012-02-22 | ダウ・コーニング・コーポレイション | 反射防止膜材料 |
JP2007293160A (ja) * | 2006-04-27 | 2007-11-08 | Asahi Kasei Corp | 感光性かご状シルセスキオキサン化合物 |
US7955649B2 (en) * | 2007-01-17 | 2011-06-07 | Visichem Technology, Ltd. | Forming thin films using a resealable vial carrier of amphiphilic molecules |
US7803521B2 (en) * | 2007-11-19 | 2010-09-28 | International Business Machines Corporation | Photoresist compositions and process for multiple exposures with multiple layer photoresist systems |
US7846644B2 (en) * | 2007-11-20 | 2010-12-07 | Eastman Kodak Company | Photopatternable deposition inhibitor containing siloxane |
JP5587791B2 (ja) | 2008-01-08 | 2014-09-10 | 東レ・ダウコーニング株式会社 | シルセスキオキサン樹脂 |
EP2238198A4 (de) * | 2008-01-15 | 2011-11-16 | Dow Corning | Silsesquioxanharze |
EP2250213B1 (de) * | 2008-03-04 | 2013-08-21 | Dow Corning Corporation | Silsesquioxanharze |
US8241707B2 (en) * | 2008-03-05 | 2012-08-14 | Dow Corning Corporation | Silsesquioxane resins |
US20110236835A1 (en) * | 2008-12-10 | 2011-09-29 | Peng-Fei Fu | Silsesquioxane Resins |
US8809482B2 (en) | 2008-12-10 | 2014-08-19 | Dow Corning Corporation | Silsesquioxane resins |
DE102013003329A1 (de) | 2013-02-25 | 2014-08-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Silane, Hybridpolymere und Photolack mit Positiv-Resist Verhalten sowie Verfahren zur Herstellung |
KR102375191B1 (ko) * | 2015-01-05 | 2022-03-17 | 삼성디스플레이 주식회사 | 포지티브형 감광성 실록산 수지 조성물 및 이를 포함하는 표시 장치 |
KR20190081079A (ko) * | 2017-12-29 | 2019-07-09 | 롬엔드하스전자재료코리아유한회사 | 포지티브형 감광성 수지 조성물 및 이를 이용한 경화막 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848045A (ja) * | 1981-09-18 | 1983-03-19 | Shin Etsu Chem Co Ltd | 感光性組成物 |
US4603195A (en) * | 1983-12-30 | 1986-07-29 | International Business Machines Corporation | Organosilicon compound and use thereof in photolithography |
US4745169A (en) * | 1985-05-10 | 1988-05-17 | Hitachi, Ltd. | Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer |
US4789648A (en) * | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
JP2619358B2 (ja) * | 1986-01-08 | 1997-06-11 | 株式会社日立製作所 | 感光性樹脂組成物 |
JPS62212645A (ja) * | 1986-03-14 | 1987-09-18 | Nippon Telegr & Teleph Corp <Ntt> | レジスト材料 |
JPS63143538A (ja) * | 1986-12-08 | 1988-06-15 | Toshiba Corp | 感光性組成物 |
JPH0769610B2 (ja) * | 1987-03-19 | 1995-07-31 | 株式会社日立製作所 | パターン形成方法 |
JPS63261255A (ja) * | 1987-04-20 | 1988-10-27 | Hitachi Ltd | 感光性樹脂組成物 |
US4770897A (en) * | 1987-05-05 | 1988-09-13 | Digital Equipment Corporation | Multilayer interconnection system for multichip high performance semiconductor packaging |
JP2700655B2 (ja) * | 1988-03-02 | 1998-01-21 | 富士写真フイルム株式会社 | フォトレジスト組成物 |
JPH0232354A (ja) * | 1988-07-22 | 1990-02-02 | Nippon Telegr & Teleph Corp <Ntt> | 感光性樹脂組成物 |
EP0365881A3 (de) * | 1988-10-28 | 1990-07-11 | International Business Machines Corporation | Aufzeichnungszusammensetzung und ihre Verwendung |
US4992596A (en) * | 1988-12-27 | 1991-02-12 | Olin Hunt Specialty Products Inc. | Selected trinuclear novolak oligomers and their use in photoactive compounds and radiation sensitive mixtures |
JPH0356964A (ja) * | 1989-07-26 | 1991-03-12 | Sony Corp | レジスト材料 |
US5115090A (en) * | 1990-03-30 | 1992-05-19 | Sachdev Krishna G | Viscosity stable, essentially gel-free polyamic acid compositions |
-
1993
- 1993-03-23 EP EP93480025A patent/EP0568476B1/de not_active Expired - Lifetime
- 1993-03-23 DE DE69300616T patent/DE69300616T2/de not_active Expired - Fee Related
- 1993-04-13 JP JP5086492A patent/JP2744875B2/ja not_active Expired - Lifetime
-
1994
- 1994-07-13 US US08/274,572 patent/US5422223A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0568476B1 (de) | 1995-10-11 |
JPH0627671A (ja) | 1994-02-04 |
JP2744875B2 (ja) | 1998-04-28 |
EP0568476A3 (de) | 1994-05-04 |
EP0568476A2 (de) | 1993-11-03 |
US5422223A (en) | 1995-06-06 |
DE69300616D1 (de) | 1995-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |