TWI309435B - - Google Patents
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- Publication number
- TWI309435B TWI309435B TW095109756A TW95109756A TWI309435B TW I309435 B TWI309435 B TW I309435B TW 095109756 A TW095109756 A TW 095109756A TW 95109756 A TW95109756 A TW 95109756A TW I309435 B TWI309435 B TW I309435B
- Authority
- TW
- Taiwan
- Prior art keywords
- convex portion
- oxygen
- semiconductor device
- substrate
- oxide film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005100326A JP2006286662A (ja) | 2005-03-31 | 2005-03-31 | シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200703443A TW200703443A (en) | 2007-01-16 |
| TWI309435B true TWI309435B (https=) | 2009-05-01 |
Family
ID=37030613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095109756A TW200703443A (en) | 2005-03-31 | 2006-03-22 | Method for treating silicone-based material to be treated, treatment apparatus and method for manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060219659A1 (https=) |
| JP (1) | JP2006286662A (https=) |
| KR (1) | KR100834612B1 (https=) |
| CN (1) | CN1841674A (https=) |
| TW (1) | TW200703443A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5138261B2 (ja) * | 2007-03-30 | 2013-02-06 | 東京エレクトロン株式会社 | シリコン酸化膜の形成方法、プラズマ処理装置および記憶媒体 |
| WO2009093760A1 (ja) * | 2008-01-24 | 2009-07-30 | Tokyo Electron Limited | シリコン酸化膜の形成方法、記憶媒体、および、プラズマ処理装置 |
| JP4845917B2 (ja) | 2008-03-28 | 2011-12-28 | 株式会社東芝 | 半導体装置の製造方法 |
| CN103077883B (zh) * | 2013-01-11 | 2016-08-24 | 武汉新芯集成电路制造有限公司 | 一种背照式cmos影像传感器制作方法 |
| CN115588605A (zh) * | 2022-10-27 | 2023-01-10 | 上海集成电路装备材料产业创新中心有限公司 | 一种注入保护层厚度控制方法及装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4630566A (en) * | 1984-08-16 | 1986-12-23 | Board Of Trustees Operating Michigan State University | Microwave or UHF plasma improved apparatus |
| US4950376A (en) * | 1988-06-21 | 1990-08-21 | Agency Of Industrial Science & Technology | Method of gas reaction process control |
| JPH0729898A (ja) * | 1993-07-15 | 1995-01-31 | Tadahiro Omi | 半導体製造方法 |
| JPH11354462A (ja) * | 1998-06-11 | 1999-12-24 | Nissin Electric Co Ltd | パルスバイアス酸素負イオン注入方法及び注入装置 |
| US6361645B1 (en) * | 1998-10-08 | 2002-03-26 | Lam Research Corporation | Method and device for compensating wafer bias in a plasma processing chamber |
| JP4105353B2 (ja) * | 1999-07-26 | 2008-06-25 | 財団法人国際科学振興財団 | 半導体装置 |
| TW463251B (en) | 2000-12-08 | 2001-11-11 | Macronix Int Co Ltd | Manufacturing method of gate structure |
| KR20020054907A (ko) * | 2000-12-28 | 2002-07-08 | 박종섭 | 플라즈마 증착장비 및 이를 이용한 증착막 형성방법 |
| KR100399019B1 (ko) * | 2001-04-23 | 2003-09-19 | 한국과학기술연구원 | 상온 화학 증착 시스템 및 이를 이용한 복합 금속막 제조 방법 |
-
2005
- 2005-03-31 JP JP2005100326A patent/JP2006286662A/ja not_active Abandoned
-
2006
- 2006-03-22 TW TW095109756A patent/TW200703443A/zh not_active IP Right Cessation
- 2006-03-30 KR KR1020060028972A patent/KR100834612B1/ko not_active Expired - Fee Related
- 2006-03-30 US US11/392,728 patent/US20060219659A1/en not_active Abandoned
- 2006-03-31 CN CNA2006100670598A patent/CN1841674A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20060219659A1 (en) | 2006-10-05 |
| JP2006286662A (ja) | 2006-10-19 |
| KR100834612B1 (ko) | 2008-06-02 |
| CN1841674A (zh) | 2006-10-04 |
| KR20060105588A (ko) | 2006-10-11 |
| TW200703443A (en) | 2007-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |