KR100834612B1 - 실리콘계 피처리물의 처리 방법, 처리 장치 및 반도체장치의 제조 방법 - Google Patents

실리콘계 피처리물의 처리 방법, 처리 장치 및 반도체장치의 제조 방법 Download PDF

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Publication number
KR100834612B1
KR100834612B1 KR1020060028972A KR20060028972A KR100834612B1 KR 100834612 B1 KR100834612 B1 KR 100834612B1 KR 1020060028972 A KR1020060028972 A KR 1020060028972A KR 20060028972 A KR20060028972 A KR 20060028972A KR 100834612 B1 KR100834612 B1 KR 100834612B1
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South Korea
Prior art keywords
silicon
workpiece
plasma
oxygen
semiconductor device
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KR1020060028972A
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Korean (ko)
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KR20060105588A (ko
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다께시 야마우찌
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가부시끼가이샤 도시바
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
KR1020060028972A 2005-03-31 2006-03-30 실리콘계 피처리물의 처리 방법, 처리 장치 및 반도체장치의 제조 방법 Expired - Fee Related KR100834612B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00100326 2005-03-31
JP2005100326A JP2006286662A (ja) 2005-03-31 2005-03-31 シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20060105588A KR20060105588A (ko) 2006-10-11
KR100834612B1 true KR100834612B1 (ko) 2008-06-02

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KR1020060028972A Expired - Fee Related KR100834612B1 (ko) 2005-03-31 2006-03-30 실리콘계 피처리물의 처리 방법, 처리 장치 및 반도체장치의 제조 방법

Country Status (5)

Country Link
US (1) US20060219659A1 (https=)
JP (1) JP2006286662A (https=)
KR (1) KR100834612B1 (https=)
CN (1) CN1841674A (https=)
TW (1) TW200703443A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5138261B2 (ja) * 2007-03-30 2013-02-06 東京エレクトロン株式会社 シリコン酸化膜の形成方法、プラズマ処理装置および記憶媒体
WO2009093760A1 (ja) * 2008-01-24 2009-07-30 Tokyo Electron Limited シリコン酸化膜の形成方法、記憶媒体、および、プラズマ処理装置
JP4845917B2 (ja) 2008-03-28 2011-12-28 株式会社東芝 半導体装置の製造方法
CN103077883B (zh) * 2013-01-11 2016-08-24 武汉新芯集成电路制造有限公司 一种背照式cmos影像传感器制作方法
CN115588605A (zh) * 2022-10-27 2023-01-10 上海集成电路装备材料产业创新中心有限公司 一种注入保护层厚度控制方法及装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729898A (ja) * 1993-07-15 1995-01-31 Tadahiro Omi 半導体製造方法
JPH11354462A (ja) * 1998-06-11 1999-12-24 Nissin Electric Co Ltd パルスバイアス酸素負イオン注入方法及び注入装置
US20020072185A1 (en) 2000-12-08 2002-06-13 Chen Wei Wen Method of forming gate structure
KR20020054907A (ko) * 2000-12-28 2002-07-08 박종섭 플라즈마 증착장비 및 이를 이용한 증착막 형성방법
KR20020082013A (ko) * 2001-04-23 2002-10-30 한국과학기술연구원 Ｅｃｒ과 스퍼터 결합형 상온 화학 증착 시스템 및 이를이용한 복합 금속막 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4950376A (en) * 1988-06-21 1990-08-21 Agency Of Industrial Science & Technology Method of gas reaction process control
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
JP4105353B2 (ja) * 1999-07-26 2008-06-25 財団法人国際科学振興財団 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729898A (ja) * 1993-07-15 1995-01-31 Tadahiro Omi 半導体製造方法
JPH11354462A (ja) * 1998-06-11 1999-12-24 Nissin Electric Co Ltd パルスバイアス酸素負イオン注入方法及び注入装置
US20020072185A1 (en) 2000-12-08 2002-06-13 Chen Wei Wen Method of forming gate structure
KR20020054907A (ko) * 2000-12-28 2002-07-08 박종섭 플라즈마 증착장비 및 이를 이용한 증착막 형성방법
KR20020082013A (ko) * 2001-04-23 2002-10-30 한국과학기술연구원 Ｅｃｒ과 스퍼터 결합형 상온 화학 증착 시스템 및 이를이용한 복합 금속막 제조 방법

Also Published As

Publication number Publication date
US20060219659A1 (en) 2006-10-05
TWI309435B (https=) 2009-05-01
JP2006286662A (ja) 2006-10-19
CN1841674A (zh) 2006-10-04
KR20060105588A (ko) 2006-10-11
TW200703443A (en) 2007-01-16

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