CN1841674A - 硅类被处理物的处理方法、装置及半导体器件的制造方法 - Google Patents

硅类被处理物的处理方法、装置及半导体器件的制造方法 Download PDF

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Publication number
CN1841674A
CN1841674A CNA2006100670598A CN200610067059A CN1841674A CN 1841674 A CN1841674 A CN 1841674A CN A2006100670598 A CNA2006100670598 A CN A2006100670598A CN 200610067059 A CN200610067059 A CN 200610067059A CN 1841674 A CN1841674 A CN 1841674A
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CN
China
Prior art keywords
treated
mentioned
silicon class
processing method
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006100670598A
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English (en)
Chinese (zh)
Inventor
山内健资
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1841674A publication Critical patent/CN1841674A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
CNA2006100670598A 2005-03-31 2006-03-31 硅类被处理物的处理方法、装置及半导体器件的制造方法 Pending CN1841674A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP100326/2005 2005-03-31
JP2005100326A JP2006286662A (ja) 2005-03-31 2005-03-31 シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN1841674A true CN1841674A (zh) 2006-10-04

Family

ID=37030613

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100670598A Pending CN1841674A (zh) 2005-03-31 2006-03-31 硅类被处理物的处理方法、装置及半导体器件的制造方法

Country Status (5)

Country Link
US (1) US20060219659A1 (https=)
JP (1) JP2006286662A (https=)
KR (1) KR100834612B1 (https=)
CN (1) CN1841674A (https=)
TW (1) TW200703443A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101652842B (zh) * 2007-03-30 2012-11-14 东京毅力科创株式会社 等离子体氧化处理方法和等离子体处理装置
CN103077883A (zh) * 2013-01-11 2013-05-01 陆伟 一种晶圆表面缺陷修复方法
CN115588605A (zh) * 2022-10-27 2023-01-10 上海集成电路装备材料产业创新中心有限公司 一种注入保护层厚度控制方法及装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009093760A1 (ja) * 2008-01-24 2009-07-30 Tokyo Electron Limited シリコン酸化膜の形成方法、記憶媒体、および、プラズマ処理装置
JP4845917B2 (ja) 2008-03-28 2011-12-28 株式会社東芝 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4950376A (en) * 1988-06-21 1990-08-21 Agency Of Industrial Science & Technology Method of gas reaction process control
JPH0729898A (ja) * 1993-07-15 1995-01-31 Tadahiro Omi 半導体製造方法
JPH11354462A (ja) * 1998-06-11 1999-12-24 Nissin Electric Co Ltd パルスバイアス酸素負イオン注入方法及び注入装置
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
JP4105353B2 (ja) * 1999-07-26 2008-06-25 財団法人国際科学振興財団 半導体装置
TW463251B (en) 2000-12-08 2001-11-11 Macronix Int Co Ltd Manufacturing method of gate structure
KR20020054907A (ko) * 2000-12-28 2002-07-08 박종섭 플라즈마 증착장비 및 이를 이용한 증착막 형성방법
KR100399019B1 (ko) * 2001-04-23 2003-09-19 한국과학기술연구원 상온 화학 증착 시스템 및 이를 이용한 복합 금속막 제조 방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101652842B (zh) * 2007-03-30 2012-11-14 东京毅力科创株式会社 等离子体氧化处理方法和等离子体处理装置
TWI487027B (zh) * 2007-03-30 2015-06-01 東京威力科創股份有限公司 Plasma oxidation treatment method
CN103077883A (zh) * 2013-01-11 2013-05-01 陆伟 一种晶圆表面缺陷修复方法
CN103077883B (zh) * 2013-01-11 2016-08-24 武汉新芯集成电路制造有限公司 一种背照式cmos影像传感器制作方法
CN115588605A (zh) * 2022-10-27 2023-01-10 上海集成电路装备材料产业创新中心有限公司 一种注入保护层厚度控制方法及装置

Also Published As

Publication number Publication date
US20060219659A1 (en) 2006-10-05
TWI309435B (https=) 2009-05-01
JP2006286662A (ja) 2006-10-19
KR100834612B1 (ko) 2008-06-02
KR20060105588A (ko) 2006-10-11
TW200703443A (en) 2007-01-16

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