JP2006286662A - シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法 - Google Patents

シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法 Download PDF

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Publication number
JP2006286662A
JP2006286662A JP2005100326A JP2005100326A JP2006286662A JP 2006286662 A JP2006286662 A JP 2006286662A JP 2005100326 A JP2005100326 A JP 2005100326A JP 2005100326 A JP2005100326 A JP 2005100326A JP 2006286662 A JP2006286662 A JP 2006286662A
Authority
JP
Japan
Prior art keywords
silicon
oxidation
silicon wafer
voltage
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2005100326A
Other languages
English (en)
Japanese (ja)
Inventor
Takemoto Yamauchi
健資 山内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2005100326A priority Critical patent/JP2006286662A/ja
Priority to TW095109756A priority patent/TW200703443A/zh
Priority to KR1020060028972A priority patent/KR100834612B1/ko
Priority to US11/392,728 priority patent/US20060219659A1/en
Priority to CNA2006100670598A priority patent/CN1841674A/zh
Publication of JP2006286662A publication Critical patent/JP2006286662A/ja
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
JP2005100326A 2005-03-31 2005-03-31 シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法 Abandoned JP2006286662A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005100326A JP2006286662A (ja) 2005-03-31 2005-03-31 シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法
TW095109756A TW200703443A (en) 2005-03-31 2006-03-22 Method for treating silicone-based material to be treated, treatment apparatus and method for manufacturing semiconductor device
KR1020060028972A KR100834612B1 (ko) 2005-03-31 2006-03-30 실리콘계 피처리물의 처리 방법, 처리 장치 및 반도체장치의 제조 방법
US11/392,728 US20060219659A1 (en) 2005-03-31 2006-03-30 Method for treatment of silicon-based target object to be processed, apparatus for treatment and method of manufacturing semiconductor device
CNA2006100670598A CN1841674A (zh) 2005-03-31 2006-03-31 硅类被处理物的处理方法、装置及半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005100326A JP2006286662A (ja) 2005-03-31 2005-03-31 シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JP2006286662A true JP2006286662A (ja) 2006-10-19

Family

ID=37030613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005100326A Abandoned JP2006286662A (ja) 2005-03-31 2005-03-31 シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20060219659A1 (https=)
JP (1) JP2006286662A (https=)
KR (1) KR100834612B1 (https=)
CN (1) CN1841674A (https=)
TW (1) TW200703443A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008123431A1 (ja) * 2007-03-30 2008-10-16 Tokyo Electron Limited プラズマ酸化処理方法、プラズマ処理装置、及び、記憶媒体
WO2009093760A1 (ja) * 2008-01-24 2009-07-30 Tokyo Electron Limited シリコン酸化膜の形成方法、記憶媒体、および、プラズマ処理装置
JP2009239157A (ja) * 2008-03-28 2009-10-15 Toshiba Corp 半導体装置の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103077883B (zh) * 2013-01-11 2016-08-24 武汉新芯集成电路制造有限公司 一种背照式cmos影像传感器制作方法
CN115588605A (zh) * 2022-10-27 2023-01-10 上海集成电路装备材料产业创新中心有限公司 一种注入保护层厚度控制方法及装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4950376A (en) * 1988-06-21 1990-08-21 Agency Of Industrial Science & Technology Method of gas reaction process control
JPH0729898A (ja) * 1993-07-15 1995-01-31 Tadahiro Omi 半導体製造方法
JPH11354462A (ja) * 1998-06-11 1999-12-24 Nissin Electric Co Ltd パルスバイアス酸素負イオン注入方法及び注入装置
US6361645B1 (en) * 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
JP4105353B2 (ja) * 1999-07-26 2008-06-25 財団法人国際科学振興財団 半導体装置
TW463251B (en) 2000-12-08 2001-11-11 Macronix Int Co Ltd Manufacturing method of gate structure
KR20020054907A (ko) * 2000-12-28 2002-07-08 박종섭 플라즈마 증착장비 및 이를 이용한 증착막 형성방법
KR100399019B1 (ko) * 2001-04-23 2003-09-19 한국과학기술연구원 상온 화학 증착 시스템 및 이를 이용한 복합 금속막 제조 방법

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008123431A1 (ja) * 2007-03-30 2008-10-16 Tokyo Electron Limited プラズマ酸化処理方法、プラズマ処理装置、及び、記憶媒体
KR101188553B1 (ko) * 2007-03-30 2012-10-05 도쿄엘렉트론가부시키가이샤 플라즈마 산화 처리 방법 및 플라즈마 처리 장치
US8372761B2 (en) 2007-03-30 2013-02-12 Tokyo Electron Limited Plasma oxidation processing method, plasma processing apparatus and storage medium
WO2009093760A1 (ja) * 2008-01-24 2009-07-30 Tokyo Electron Limited シリコン酸化膜の形成方法、記憶媒体、および、プラズマ処理装置
KR101249611B1 (ko) * 2008-01-24 2013-04-01 도쿄엘렉트론가부시키가이샤 실리콘 산화막의 형성 방법, 기억 매체, 및 플라즈마 처리 장치
JP2009239157A (ja) * 2008-03-28 2009-10-15 Toshiba Corp 半導体装置の製造方法
US7858467B2 (en) 2008-03-28 2010-12-28 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US8097503B2 (en) 2008-03-28 2012-01-17 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US8404537B2 (en) 2008-03-28 2013-03-26 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
US20060219659A1 (en) 2006-10-05
TWI309435B (https=) 2009-05-01
KR100834612B1 (ko) 2008-06-02
CN1841674A (zh) 2006-10-04
KR20060105588A (ko) 2006-10-11
TW200703443A (en) 2007-01-16

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