TWI308600B - Dense coating formation by reactive deposition - Google Patents

Dense coating formation by reactive deposition Download PDF

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Publication number
TWI308600B
TWI308600B TW094142974A TW94142974A TWI308600B TW I308600 B TWI308600 B TW I308600B TW 094142974 A TW094142974 A TW 094142974A TW 94142974 A TW94142974 A TW 94142974A TW I308600 B TWI308600 B TW I308600B
Authority
TW
Taiwan
Prior art keywords
coating
substrate
deposition
reactant
product
Prior art date
Application number
TW094142974A
Other languages
English (en)
Chinese (zh)
Other versions
TW200641178A (en
Inventor
Shivkumar Chiruvolu
Michael Edward Chapin
Original Assignee
Nanogram Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanogram Corp filed Critical Nanogram Corp
Publication of TW200641178A publication Critical patent/TW200641178A/zh
Application granted granted Critical
Publication of TWI308600B publication Critical patent/TWI308600B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/02—Details
    • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
    • H01M8/0204—Non-porous and characterised by the material
    • H01M8/0223—Composites
    • H01M8/0228—Composites in the form of layered or coated products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/34—Applying different liquids or other fluent materials simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • B05D1/42—Distributing applied liquids or other fluent materials by members moving relatively to surface by non-rotary members
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/10—Fuel cells with solid electrolytes
    • H01M8/12—Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
    • H01M8/1231—Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte with both reactants being gaseous or vaporised
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/14—Fuel cells with fused electrolytes
    • H01M8/141—Fuel cells with fused electrolytes the anode and the cathode being gas-permeable electrodes or electrode layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/10—Fuel cells with solid electrolytes
    • H01M8/12—Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
    • H01M2008/1293—Fuel cells with solid oxide electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/14—Fuel cells with fused electrolytes
    • H01M2008/147—Fuel cells with molten carbonates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/02—Details
    • H01M8/0202—Collectors; Separators, e.g. bipolar separators; Interconnectors
    • H01M8/0247—Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the form
    • H01M8/0252—Collectors; Separators, e.g. bipolar separators; Interconnectors characterised by the form tubular
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Composite Materials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inert Electrodes (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Chemically Coating (AREA)
TW094142974A 2004-12-20 2005-12-06 Dense coating formation by reactive deposition TWI308600B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/017,214 US7491431B2 (en) 2004-12-20 2004-12-20 Dense coating formation by reactive deposition

Publications (2)

Publication Number Publication Date
TW200641178A TW200641178A (en) 2006-12-01
TWI308600B true TWI308600B (en) 2009-04-11

Family

ID=36596196

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142974A TWI308600B (en) 2004-12-20 2005-12-06 Dense coating formation by reactive deposition

Country Status (7)

Country Link
US (1) US7491431B2 (enExample)
EP (1) EP1841541A2 (enExample)
JP (1) JP2008524450A (enExample)
KR (1) KR20070091666A (enExample)
CN (1) CN101119807A (enExample)
TW (1) TWI308600B (enExample)
WO (1) WO2006068846A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI658920B (zh) * 2015-12-28 2019-05-11 曼瑟森三汽油公司 於建立平台上製造物件之加法製造方法及用於加法製造方法之具有特定表面化學性之金屬基材

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6952504B2 (en) * 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
ATE527104T1 (de) * 2000-10-26 2011-10-15 Neophotonics Corp Mehrschichtige optische strukturen
ATE529901T1 (de) * 2004-02-27 2011-11-15 Canon Kk Piezoelektrischer dünnfilm, verfahren zur herstellung eines piezoelektrischen dünnfilms, piezoelektrisches element und inkjet- aufzeichnungskopf
US8015724B2 (en) * 2004-04-23 2011-09-13 Panasonic Electric Works Co., Ltd. Heating blower with electrostatic atomizing device
JP4453021B2 (ja) * 2005-04-01 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び半導体製造装置
KR20080109778A (ko) * 2006-03-13 2008-12-17 나노그램 코포레이션 얇은 실리콘 또는 게르마늄 시트 및 얇은 시트로 형성된 광전지
JP4434167B2 (ja) * 2006-03-28 2010-03-17 セイコーエプソン株式会社 半導体装置の製造方法
JP5545608B2 (ja) * 2006-07-18 2014-07-09 日本碍子株式会社 誘電体デバイス
US7867904B2 (en) * 2006-07-19 2011-01-11 Intermolecular, Inc. Method and system for isolated and discretized process sequence integration
CN101490834A (zh) * 2006-07-19 2009-07-22 分子间公司 用于隔离的与离散的工艺顺序的整合的方法与系统
US20080038486A1 (en) * 2006-08-03 2008-02-14 Helmuth Treichel Radical Assisted Batch Film Deposition
US8617913B2 (en) * 2006-08-23 2013-12-31 Rockwell Collins, Inc. Alkali silicate glass based coating and method for applying
US8166645B2 (en) * 2006-08-23 2012-05-01 Rockwell Collins, Inc. Method for providing near-hermetically coated, thermally protected integrated circuit assemblies
US8637980B1 (en) 2007-12-18 2014-01-28 Rockwell Collins, Inc. Adhesive applications using alkali silicate glass for electronics
US8084855B2 (en) 2006-08-23 2011-12-27 Rockwell Collins, Inc. Integrated circuit tampering protection and reverse engineering prevention coatings and methods
US8076185B1 (en) 2006-08-23 2011-12-13 Rockwell Collins, Inc. Integrated circuit protection and ruggedization coatings and methods
US8174830B2 (en) 2008-05-06 2012-05-08 Rockwell Collins, Inc. System and method for a substrate with internal pumped liquid metal for thermal spreading and cooling
US8581108B1 (en) 2006-08-23 2013-11-12 Rockwell Collins, Inc. Method for providing near-hermetically coated integrated circuit assemblies
US7915527B1 (en) 2006-08-23 2011-03-29 Rockwell Collins, Inc. Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings
US7465681B2 (en) * 2006-08-25 2008-12-16 Corning Incorporated Method for producing smooth, dense optical films
AU2012261639B2 (en) * 2006-09-13 2014-02-27 The University Of Akron Catalysts Compositions for use in Fuel Cells
WO2008033421A2 (en) * 2006-09-13 2008-03-20 University Of Akron Catalysts compositions for use in fuel cells
US20080081007A1 (en) * 2006-09-29 2008-04-03 Mott Corporation, A Corporation Of The State Of Connecticut Sinter bonded porous metallic coatings
US9149750B2 (en) 2006-09-29 2015-10-06 Mott Corporation Sinter bonded porous metallic coatings
JP4407685B2 (ja) * 2006-10-11 2010-02-03 セイコーエプソン株式会社 半導体装置の製造方法および電子機器の製造方法
JP4362834B2 (ja) * 2006-10-11 2009-11-11 セイコーエプソン株式会社 半導体装置の製造方法、電子機器の製造方法および半導体製造装置
US20090026421A1 (en) * 2007-01-22 2009-01-29 Xuegeng Li Optimized laser pyrolysis reactor and methods therefor
WO2008103293A1 (en) 2007-02-16 2008-08-28 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
US7857946B2 (en) * 2007-04-26 2010-12-28 Canon Anelva Corporation Sputtering film forming method, electronic device manufacturing method, and sputtering system
US7791166B2 (en) * 2007-05-04 2010-09-07 International Business Machines Corporation Formation of dummy features and inductors in semiconductor fabrication
US20090017292A1 (en) * 2007-06-15 2009-01-15 Henry Hieslmair Reactive flow deposition and synthesis of inorganic foils
WO2009002544A1 (en) * 2007-06-26 2008-12-31 Rolls-Royce Corporation Prism mount for a laser deposition device
KR20090002841A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 산화물 반도체, 이를 포함하는 박막 트랜지스터 및 그 제조방법
US8815466B2 (en) * 2007-08-09 2014-08-26 President And Fellows Of Harvard College Micro-scale energy conversion devices and methods
US8363189B2 (en) * 2007-12-18 2013-01-29 Rockwell Collins, Inc. Alkali silicate glass for displays
US8221089B2 (en) 2008-09-12 2012-07-17 Rockwell Collins, Inc. Thin, solid-state mechanism for pumping electrically conductive liquids in a flexible thermal spreader
US8616266B2 (en) * 2008-09-12 2013-12-31 Rockwell Collins, Inc. Mechanically compliant thermal spreader with an embedded cooling loop for containing and circulating electrically-conductive liquid
US8650886B2 (en) * 2008-09-12 2014-02-18 Rockwell Collins, Inc. Thermal spreader assembly with flexible liquid cooling loop having rigid tubing sections and flexible tubing sections
US8205337B2 (en) * 2008-09-12 2012-06-26 Rockwell Collins, Inc. Fabrication process for a flexible, thin thermal spreader
US20090317033A1 (en) * 2008-06-20 2009-12-24 Industrial Technology Research Institute Integrated circuit and photonic board thereof
US8119040B2 (en) 2008-09-29 2012-02-21 Rockwell Collins, Inc. Glass thick film embedded passive material
US8168463B2 (en) * 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
WO2010051441A1 (en) * 2008-10-30 2010-05-06 Georgia Tech Research Corporation Chemical compositions, methods of making the chemical compositions, and structures made from the chemical compositions
US20100294352A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Metal patterning for electrically conductive structures based on alloy formation
US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
JP5410174B2 (ja) * 2009-07-01 2014-02-05 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理システム
US20100112324A1 (en) * 2009-08-06 2010-05-06 Boaz Premakaran T Coatings on Glass
WO2011028527A2 (en) * 2009-08-24 2011-03-10 Applied Materials, Inc. In-situ deposition of battery active lithium materials by plasma spraying
JP5715141B2 (ja) * 2009-09-21 2015-05-07 ナノグラム・コーポレイションＮａｎｏＧｒａｍ Ｃｏｒｐｏｒａｔｉｏｎ 薄膜太陽電池形成のためのシリコンインク、対応の方法及び太陽電池構造
JP5738885B2 (ja) * 2009-12-04 2015-06-24 ザ リージェンツ オブ ユニバーシティー オブ ミシガン コールド・スプレー・ノズル組立体、及び基材に粒子の被膜を付着させる方法
US10119195B2 (en) 2009-12-04 2018-11-06 The Regents Of The University Of Michigan Multichannel cold spray apparatus
WO2011108671A1 (ja) * 2010-03-04 2011-09-09 イマジニアリング株式会社 被膜形成装置、及び被膜形成物の製造方法
US20130101915A1 (en) * 2010-06-25 2013-04-25 Utc Power Corporation Composite seal for fuel cells, process of manufacture, and fuel cell stack using same
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US9059449B2 (en) * 2011-03-25 2015-06-16 Bloom Energy Corporation Rapid thermal processing for SOFC manufacturing
US9511572B2 (en) 2011-05-25 2016-12-06 Southwest Research Institute Nanocrystalline interlayer coating for increasing service life of thermal barrier coating on high temperature components
GB2491643A (en) * 2011-06-10 2012-12-12 Lambson Ltd Method of forming a polymeric material on a substrate
EP2759013B1 (en) * 2011-09-23 2018-03-21 Intelligent Energy Limited Methods of forming arrays of fuel cells on a composite surface
US9147584B2 (en) 2011-11-16 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Rotating curing
TR201903734T4 (tr) 2011-11-18 2019-03-21 First Solar Inc Materyalin eş biriktirilmesine yönelik buhar taşıma biriktirme yöntemi ve sistemi.
CN104737268A (zh) 2012-01-12 2015-06-24 第一太阳能有限公司 在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统
US9428837B2 (en) 2012-03-27 2016-08-30 United Technologies Corporation Multi-material thermal barrier coating system
EP2837047A4 (en) * 2012-04-13 2015-12-23 Oti Lumionics Inc FUNCTIONALIZATION OF A SUBSTRATE
US8853070B2 (en) 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
US9435915B1 (en) 2012-09-28 2016-09-06 Rockwell Collins, Inc. Antiglare treatment for glass
CN102925890B (zh) * 2012-10-26 2014-07-09 山东大学 一种镍-铝基金属间化合物耐腐蚀涂层的制备方法
ES2870712T3 (es) 2013-02-01 2021-10-27 Emd Acquisition Llc Composiciones mejoradas de óxido de litio manganeso
WO2015061306A1 (en) * 2013-10-25 2015-04-30 United Technologies Corporation Plasma spraying system with adjustable coating medium nozzle
CN103820757B (zh) * 2014-03-19 2015-12-30 沈阳慧宇真空技术有限公司 一种激光分子束蒸发系统变向传动定位机构
US10828400B2 (en) 2014-06-10 2020-11-10 The Research Foundation For The State University Of New York Low temperature, nanostructured ceramic coatings
US10253984B2 (en) * 2015-04-28 2019-04-09 United Technologies Corporation Reflective coating for components
US10241409B2 (en) 2015-12-22 2019-03-26 AZ Electronic Materials (Luxembourg) S.à.r.l. Materials containing metal oxides, processes for making same, and processes for using same
US20170330725A1 (en) * 2016-05-13 2017-11-16 Axcelis Technologies, Inc. Lanthanated tungsten ion source and beamline components
US9956587B2 (en) * 2016-08-29 2018-05-01 The Aerospace Corporation Fabrication assembly and methods for fabricating composite mirror objects
CN108611627B (zh) 2016-12-13 2020-09-01 华邦电子股份有限公司 金属青铜类化合物、其制造方法以及墨水
US11796134B2 (en) * 2018-06-22 2023-10-24 Linde Gmbh Cylinder valves and methods for inhibiting the formation of contaminants in cylinders and cylinder valves
TWI902284B (zh) * 2018-07-18 2025-10-21 美商應用材料股份有限公司 原子層沉積所沉積的抗侵蝕金屬氟化物塗層
US20200024735A1 (en) * 2018-07-18 2020-01-23 Applied Materials, Inc. Erosion resistant metal fluoride coatings deposited by atomic layer deposition
WO2020047470A1 (en) * 2018-08-31 2020-03-05 The Regents Of The University Of Michigan Polymer precursors for solid state electrolytes
CN111533554B (zh) * 2020-04-30 2022-03-11 福建火炬电子科技股份有限公司 一种高压陶瓷脉冲电容器、介质材料及其制备方法
TWI739652B (zh) * 2020-11-06 2021-09-11 愛能有限公司 用於鋪設坡屋頂之太陽能電池板及其施工方式
CN113003929B (zh) * 2021-04-03 2023-04-28 南京至淳宏远科技有限公司 一种用于掺稀土预制棒制备的气相蒸发装置
US20250027204A1 (en) * 2021-11-15 2025-01-23 Massachusetts Institute Of Technology Spray Pyrolysis of Li-Salt Films
CN114774886B (zh) * 2022-06-21 2022-09-13 柔电（武汉）科技有限公司 一种耐氧化抗盐雾吸波材料粉体及制备方法
CN116314722A (zh) * 2023-04-23 2023-06-23 青岛新泰和纳米科技有限公司 一种氟氮掺杂无定形碳包覆硅碳复合材料及其制备方法
CN116288256B (zh) * 2023-05-17 2023-11-07 青禾晶元(天津)半导体材料有限公司 一种雾化气相沉积装置和雾化气相沉积方法

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3934061A (en) * 1972-03-30 1976-01-20 Corning Glass Works Method of forming planar optical waveguides
US3806570A (en) * 1972-03-30 1974-04-23 Corning Glass Works Method for producing high quality fused silica
US3923484A (en) * 1974-01-11 1975-12-02 Corning Glass Works Flame method of producing glass
US3883336A (en) * 1974-01-11 1975-05-13 Corning Glass Works Method of producing glass in a flame
US4011067A (en) * 1974-01-30 1977-03-08 Minnesota Mining And Manufacturing Company Filter medium layered between supporting layers
US3932162A (en) * 1974-06-21 1976-01-13 Corning Glass Works Method of making glass optical waveguide
JPS51102014A (en) * 1974-11-01 1976-09-09 Komatsu Denshi Kinzoku Kk Kojundotomeigarasutaino seizohoho
JPS5263213A (en) * 1975-11-20 1977-05-25 Komatsu Denshi Kinzoku Kk Process for preparing highhpurity transparent silica glass products
US4119509A (en) * 1976-06-11 1978-10-10 Massachusetts Institute Of Technology Method and apparatus for isotope separation from a gas stream
US4140912A (en) * 1977-07-25 1979-02-20 The United States Of America As Represented By The Secretary Of The Navy Atmospheric radon monitor
US4581248A (en) * 1984-03-07 1986-04-08 Roche Gregory A Apparatus and method for laser-induced chemical vapor deposition
CA1255382A (en) * 1984-08-10 1989-06-06 Masao Kawachi Hybrid optical integrated circuit with alignment guides
DE3442790A1 (de) * 1984-11-23 1986-06-05 Dieter Prof. Dr. Linz Bäuerle Verfahren zur herstellung von duennschichtkondensatoren
US4782787A (en) * 1986-01-08 1988-11-08 Roche Gregory A Apparatus for laser-induced chemical vapor deposition
GB2185494B (en) 1986-01-18 1989-11-15 Stc Plc Vapour phase deposition process
US4868005A (en) * 1986-04-09 1989-09-19 Massachusetts Institute Of Technology Method and apparatus for photodeposition of films on surfaces
US4681640A (en) * 1986-08-06 1987-07-21 The United States Of America As Represented By The Secretary Of The Army Laser-induced chemical vapor deposition of germanium and doped-germanium films
US4986214A (en) * 1986-12-16 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus
JPS63153277A (ja) * 1986-12-17 1988-06-25 Fuji Electric Corp Res & Dev Ltd レ−ザｃｖｄ装置
US5060595A (en) * 1988-04-12 1991-10-29 Ziv Alan R Via filling by selective laser chemical vapor deposition
JP2511503B2 (ja) * 1988-08-22 1996-06-26 沖電気工業株式会社 タングステン膜の形成方法
JPH0288775A (ja) 1988-09-26 1990-03-28 Victor Co Of Japan Ltd レーザーｃｖｄ装置
US5043548A (en) * 1989-02-08 1991-08-27 General Electric Company Axial flow laser plasma spraying
JPH02310363A (ja) * 1989-05-24 1990-12-26 Mitsubishi Electric Corp レーザ蒸着装置
US5017317A (en) * 1989-12-04 1991-05-21 Board Of Regents, The Uni. Of Texas System Gas phase selective beam deposition
JP3038413B2 (ja) * 1990-12-21 2000-05-08 大阪瓦斯株式会社 光ｃｖｄ法による膜作成装置
EP0508060A3 (en) * 1991-02-12 1993-01-13 Ngk Spark Plug Co. Ltd. Method of forming oxide superconducting films and oxide superconducting members having said films
JPH05273426A (ja) * 1991-12-06 1993-10-22 Sumitomo Electric Ind Ltd 光導波膜の作製方法およびこれを用いた光導波路の作製方法
US5174826A (en) * 1991-12-06 1992-12-29 General Electric Company Laser-assisted chemical vapor deposition
US5246745A (en) * 1991-12-23 1993-09-21 International Business Machines Corporation Laser-induced chemical vapor deposition of thin-film conductors
JPH05313221A (ja) 1992-05-11 1993-11-26 Ricoh Co Ltd 強誘電体結晶素子及びそれを用いた第二高調波発生素子
JPH06116743A (ja) 1992-10-02 1994-04-26 Vacuum Metallurgical Co Ltd ガス・デポジション法による微粒子膜の形成法およびその形成装置
TW263566B (enExample) * 1993-01-14 1995-11-21 Sumitomo Electric Industries
US5858465A (en) * 1993-03-24 1999-01-12 Georgia Tech Research Corporation Combustion chemical vapor deposition of phosphate films and coatings
EP0689618B1 (en) * 1993-03-24 2003-02-26 Georgia Tech Research Corporation Method and apparatus for the combustion chemical vapor deposition of films and coatings
WO1994026425A1 (en) * 1993-05-17 1994-11-24 Mcdonnell Douglas Corporation Laser absorption wave deposition process
US5514350A (en) * 1994-04-22 1996-05-07 Rutgers, The State University Of New Jersey Apparatus for making nanostructured ceramic powders and whiskers
US5622750A (en) * 1994-10-31 1997-04-22 Lucent Technologies Inc. Aerosol process for the manufacture of planar waveguides
US5744777A (en) * 1994-12-09 1998-04-28 Northwestern University Small particle plasma spray apparatus, method and coated article
BR9610069A (pt) * 1995-08-04 2000-05-09 Microcoating Technologies Disposição de vapor quìmico e formação de pó usando-se pulverização térmica com soluções de fluido quase super-crìticas e super-crìticas
AU6915696A (en) * 1995-09-07 1997-03-27 Penn State Research Foundation, The High production rate of nano particles by laser liquid interaction
US5874134A (en) * 1996-01-29 1999-02-23 Regents Of The University Of Minnesota Production of nanostructured materials by hypersonic plasma particle deposition
US6011981A (en) * 1996-03-12 2000-01-04 International Superconductivity Technology Center Oxide superconductor multilayered film and oxide superconductor josephson device
US5885904A (en) * 1997-02-14 1999-03-23 Advanced Micro Devices, Inc. Method to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layer
US5958348A (en) * 1997-02-28 1999-09-28 Nanogram Corporation Efficient production of particles by chemical reaction
JPH10280152A (ja) 1997-04-14 1998-10-20 Nec Corp チャンバレスレーザｃｖｄ装置
DE19730231A1 (de) * 1997-07-15 1999-01-21 Abb Research Ltd Verfahren zum elektrostatischen Beschichten
US6290735B1 (en) 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
US6726990B1 (en) 1998-05-27 2004-04-27 Nanogram Corporation Silicon oxide particles
US5938979A (en) * 1997-10-31 1999-08-17 Nanogram Corporation Electromagnetic shielding
JP3256741B2 (ja) 1998-07-24 2002-02-12 独立行政法人産業技術総合研究所 超微粒子成膜法
JP2963993B1 (ja) * 1998-07-24 1999-10-18 工業技術院長 超微粒子成膜法
US6074888A (en) * 1998-08-18 2000-06-13 Trw Inc. Method for fabricating semiconductor micro epi-optical components
US7108894B2 (en) * 1998-09-30 2006-09-19 Optomec Design Company Direct Write™ System
US6097144A (en) * 1998-10-28 2000-08-01 International Lead Zinc Research Organization, Inc. Cathode ray tubes having reduced glass browning properties
JP2002528379A (ja) 1998-10-30 2002-09-03 コーニング インコーポレイテッド 光ファイバプレフォーム用スートの製造方法およびその方法により製造されたプレフォーム
US6254928B1 (en) * 1999-09-02 2001-07-03 Micron Technology, Inc. Laser pyrolysis particle forming method and particle forming method
US6923946B2 (en) * 1999-11-26 2005-08-02 Ut-Battelle, Llc Condensed phase conversion and growth of nanorods instead of from vapor
EP1333935A4 (en) 2000-10-17 2008-04-02 Nanogram Corp PREPARATION OF A COAT BY REACTIVE DEPOSITION
US7311947B2 (en) * 2003-10-10 2007-12-25 Micron Technology, Inc. Laser assisted material deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI658920B (zh) * 2015-12-28 2019-05-11 曼瑟森三汽油公司 於建立平台上製造物件之加法製造方法及用於加法製造方法之具有特定表面化學性之金屬基材

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