TWI306647B - Method of fabricating flash memory device - Google Patents
Method of fabricating flash memory device Download PDFInfo
- Publication number
- TWI306647B TWI306647B TW094120676A TW94120676A TWI306647B TW I306647 B TWI306647 B TW I306647B TW 094120676 A TW094120676 A TW 094120676A TW 94120676 A TW94120676 A TW 94120676A TW I306647 B TWI306647 B TW I306647B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- gate
- metal
- polysilicon
- stacking
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 150000002500 ions Chemical class 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000004313 glare Effects 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 9
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 210000004692 intercellular junction Anatomy 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- QAVFANVPBSEGTQ-UHFFFAOYSA-N boron;yttrium Chemical compound [Y]#B QAVFANVPBSEGTQ-UHFFFAOYSA-N 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 108090000765 processed proteins & peptides Proteins 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050020227A KR100635201B1 (ko) | 2005-03-10 | 2005-03-10 | 플래쉬 메모리 소자의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200633143A TW200633143A (en) | 2006-09-16 |
| TWI306647B true TWI306647B (en) | 2009-02-21 |
Family
ID=36994281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094120676A TWI306647B (en) | 2005-03-10 | 2005-06-21 | Method of fabricating flash memory device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2006253622A (ja) |
| KR (1) | KR100635201B1 (ja) |
| CN (1) | CN100399546C (ja) |
| TW (1) | TWI306647B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100953050B1 (ko) * | 2007-10-10 | 2010-04-14 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그의 제조 방법 |
| CN101635278B (zh) * | 2008-07-22 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Dram中存储单元的离子掺杂方法 |
| KR102031174B1 (ko) | 2012-11-16 | 2019-10-11 | 삼성전자주식회사 | 반도체 소자, 반도체 소자의 제조 방법 및 기판 가공 장치 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100255512B1 (ko) * | 1996-06-29 | 2000-05-01 | 김영환 | 플래쉬 메모리 소자 제조방법 |
| CN1099705C (zh) * | 1998-06-24 | 2003-01-22 | 台湾积体电路制造股份有限公司 | 快闪存储单元的制造方法 |
| US6153906A (en) * | 1998-12-08 | 2000-11-28 | United Microelectronics Corp. | Flash memory |
| JP2000311992A (ja) * | 1999-04-26 | 2000-11-07 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US6288419B1 (en) * | 1999-07-09 | 2001-09-11 | Micron Technology, Inc. | Low resistance gate flash memory |
| JP4819215B2 (ja) * | 2000-07-24 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| CN1290197C (zh) * | 2001-03-12 | 2006-12-13 | 株式会社日立制作所 | 用于制造半导体集成电路器件的方法 |
| KR100414562B1 (ko) * | 2001-06-29 | 2004-01-07 | 주식회사 하이닉스반도체 | 비휘발성 메모리 셀의 제조 방법 |
| JP4540899B2 (ja) * | 2001-09-13 | 2010-09-08 | パナソニック株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-03-10 KR KR1020050020227A patent/KR100635201B1/ko not_active IP Right Cessation
- 2005-06-03 JP JP2005164503A patent/JP2006253622A/ja active Pending
- 2005-06-21 TW TW094120676A patent/TWI306647B/zh not_active IP Right Cessation
- 2005-07-06 CN CNB2005100819216A patent/CN100399546C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006253622A (ja) | 2006-09-21 |
| KR100635201B1 (ko) | 2006-10-16 |
| CN100399546C (zh) | 2008-07-02 |
| KR20060099171A (ko) | 2006-09-19 |
| TW200633143A (en) | 2006-09-16 |
| CN1832145A (zh) | 2006-09-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |