CN100399546C - 制造快闪存储装置的方法 - Google Patents

制造快闪存储装置的方法 Download PDF

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Publication number
CN100399546C
CN100399546C CNB2005100819216A CN200510081921A CN100399546C CN 100399546 C CN100399546 C CN 100399546C CN B2005100819216 A CNB2005100819216 A CN B2005100819216A CN 200510081921 A CN200510081921 A CN 200510081921A CN 100399546 C CN100399546 C CN 100399546C
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CN
China
Prior art keywords
film
polysilicon
metal
foreign ion
grid
Prior art date
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Expired - Fee Related
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CNB2005100819216A
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English (en)
Chinese (zh)
Other versions
CN1832145A (zh
Inventor
李根雨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hynix Semiconductor Inc
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Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of CN1832145A publication Critical patent/CN1832145A/zh
Application granted granted Critical
Publication of CN100399546C publication Critical patent/CN100399546C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CNB2005100819216A 2005-03-10 2005-07-06 制造快闪存储装置的方法 Expired - Fee Related CN100399546C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20227/05 2005-03-10
KR1020050020227A KR100635201B1 (ko) 2005-03-10 2005-03-10 플래쉬 메모리 소자의 제조방법

Publications (2)

Publication Number Publication Date
CN1832145A CN1832145A (zh) 2006-09-13
CN100399546C true CN100399546C (zh) 2008-07-02

Family

ID=36994281

Family Applications (1)

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CNB2005100819216A Expired - Fee Related CN100399546C (zh) 2005-03-10 2005-07-06 制造快闪存储装置的方法

Country Status (4)

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JP (1) JP2006253622A (ja)
KR (1) KR100635201B1 (ja)
CN (1) CN100399546C (ja)
TW (1) TWI306647B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100953050B1 (ko) * 2007-10-10 2010-04-14 주식회사 하이닉스반도체 비휘발성 메모리 소자 및 그의 제조 방법
CN101635278B (zh) * 2008-07-22 2011-11-30 中芯国际集成电路制造(上海)有限公司 Dram中存储单元的离子掺杂方法
KR102031174B1 (ko) 2012-11-16 2019-10-11 삼성전자주식회사 반도체 소자, 반도체 소자의 제조 방법 및 기판 가공 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1170959A (zh) * 1996-06-29 1998-01-21 现代电子产业株式会社 形成快闪存储器的浮置栅极的方法
CN1239827A (zh) * 1998-06-24 1999-12-29 世大积体电路股份有限公司 快闪存储单元的制造方法
US6153906A (en) * 1998-12-08 2000-11-28 United Microelectronics Corp. Flash memory
US6288419B1 (en) * 1999-07-09 2001-09-11 Micron Technology, Inc. Low resistance gate flash memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311992A (ja) * 1999-04-26 2000-11-07 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP4819215B2 (ja) * 2000-07-24 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置およびその製造方法
WO2002073696A1 (fr) * 2001-03-12 2002-09-19 Hitachi, Ltd. Procede pour fabriquer un dispositif semi-conducteur a circuit integre
KR100414562B1 (ko) * 2001-06-29 2004-01-07 주식회사 하이닉스반도체 비휘발성 메모리 셀의 제조 방법
JP4540899B2 (ja) * 2001-09-13 2010-09-08 パナソニック株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1170959A (zh) * 1996-06-29 1998-01-21 现代电子产业株式会社 形成快闪存储器的浮置栅极的方法
CN1239827A (zh) * 1998-06-24 1999-12-29 世大积体电路股份有限公司 快闪存储单元的制造方法
US6153906A (en) * 1998-12-08 2000-11-28 United Microelectronics Corp. Flash memory
US6288419B1 (en) * 1999-07-09 2001-09-11 Micron Technology, Inc. Low resistance gate flash memory

Also Published As

Publication number Publication date
KR20060099171A (ko) 2006-09-19
TW200633143A (en) 2006-09-16
CN1832145A (zh) 2006-09-13
TWI306647B (en) 2009-02-21
JP2006253622A (ja) 2006-09-21
KR100635201B1 (ko) 2006-10-16

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Granted publication date: 20080702

Termination date: 20130706