TWI304608B - Manufacturing method of semiconductor device, semiconductor device, circuit board, electro-optic device, and electronic apparatus - Google Patents

Manufacturing method of semiconductor device, semiconductor device, circuit board, electro-optic device, and electronic apparatus Download PDF

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Publication number
TWI304608B
TWI304608B TW094146373A TW94146373A TWI304608B TW I304608 B TWI304608 B TW I304608B TW 094146373 A TW094146373 A TW 094146373A TW 94146373 A TW94146373 A TW 94146373A TW I304608 B TWI304608 B TW I304608B
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Taiwan
Prior art keywords
substrate
semiconductor device
manufacturing
droplets
resin
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TW094146373A
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English (en)
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TW200634915A (en
Inventor
Shuichi Tanaka
Mitsuru Kuribayashi
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Seiko Epson Corp
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Publication of TW200634915A publication Critical patent/TW200634915A/zh
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Publication of TWI304608B publication Critical patent/TWI304608B/zh

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    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
    • A47J47/00—Kitchen containers, stands or the like, not provided for in other groups of this subclass; Cutting-boards, e.g. for bread
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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Description

1304608 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種半導體裝置之製造方法、半導體裝 置、電路基板、光電裝置及電子機器。 【先前技術】 以往’於搭載各種電子機器之電路基板或液晶顯示裝置 等中’ 一直使用安裝半導體ic等之電子產品之技術。例如， 於液晶顯示裝置安裝驅動液晶面板之液晶驅動用IC晶片。 此液晶驅動用1C晶片，有直接安裝於構成液晶面板之玻璃 基板之情形，或者直接安裝於液晶面板之可撓性基板（FPC) 上之情形。前者之安裝構造稱為COG(Chip On Glass :玻璃 覆晶封裝）構造，後者則稱為COF(Chip On FPC :薄膜覆晶 封裝）構造。 於安裝1C晶片時，有一種於1C晶片與基板側配線間配置 彈性體之技術。作為其例，眾所皆知有將導電性粒子分散 於熱硬化性樹脂中之各向異牲導電膜（ACF ; Anisotropic Conductive Film)，配置於電極端子間之方法，或使用具有 5?·性之突起電極。 於使用具有彈性之突起電極之方法中，例如於IC晶片之 主動面形成樹脂突起’於其樹脂突起之表面形成導電膜而 構成突起電極（例如，參照專利文獻1}。突起電極表面之導 電膜係電性連接於1C晶片之電極端子。然後，藉由將此突 起電極往基板之端子推壓，構成突起電極之樹脂突起乃彈 性變形，於此狀態下，藉由熱硬化性樹脂等將1(：晶片固定 106728.doc 1304608 於基板，即使因温度變化導致熱硬化性樹脂產生熱膨脹， 尚可維持介以突起電極之導電接觸狀態。 [專利文獻1]日本特開平2-272737號公報 (發明所欲麟決之問題） 構成大起電極之樹脂突起，一般係由光微影法形成者。 亦即，使用旋轉塗佈法等於基板上塗佈感光性樹脂，介由 光罩圖案曝光其樹脂膜之後，使用顯影液顯影，再以高温 燒成硬化之。另外，構成突起電極之導電膜，一般乃由電 鍍法形成者。 由於對1C晶等之電子構件乃求要品質之安穩化及低成 本化’故期望對其之製造方法可明確。 本發明之目的在於提供一種，可達成突起電極之厚膜 化、或製造成本降低之半導體裝置之製造方法。 【發明内容】 本赉月之半導體裝置之製造方法，其特徵為製造具有突 起電極之半導體裝置，且前述突起電極乃以樹脂材作為芯 並至少以導電膜覆蓋頂部，其係具備藉由噴墨法於形成電 極端子之基板上，配置前述樹脂之步驟，與形成連結前述 電極端子及前述樹脂材之頂部之金屬配線之步驟。 藉由此半導體裝置之製造方法，因以喷墨法形成為突起 電極之芯之樹脂材，故可易於達成厚膜化突起電極或減低 ^匕製造成本。亦即，藉由喷墨法可於基板上之期望局部區 或配置材料，故膜形成之製程乃較簡單且不浪費使用材 料，並且可控制各部分之材料配置量或配置時間，故可因 106728.d〇c 1304608 應=用=之特性謀求材料膜之厚膜化。 "如’精由從吐出機構滴下複數 材，可任意設定由樹脂材構成膜 ^而進行配置樹脂 因積層樹脂材而達成厚膜化。 /狀之同時’也可謀求 並且’前述吐出機構係 之構造。藉由從複數喷嘴，滴下含=出用之複數喷嘴 制各部分樹脂材之配置量或配置時間^材之液滴，可控 於上述製造方法中，藉由反覆 乾燥前述樹脂材之步驟 置^樹崎之步驟與 化。 驟树月曰材之乾燥膜乃漸積層且厚膜 並且，於配置前述樹脂材之前， _ 面之至少一部區域，加工 /、將前述基板表 驟。 成對刖述樹脂材具有撥液性之步 在此’所謂撥液性為對樹 藉由此，可控制配置於= 上具之^示非親和性之特性。 圖案之或控制膜形狀，<液滴擴散，且可厚膜化 二：ίΓ製造方法中，例如藉由前述樹脂材之配置，可於 I二二二致相同高度形成呈線狀延伸存在之樹脂突
Ln直: 材之配置，於基板上形成並排於大 致相问直線上之複數樹脂突起。 配：。卜》上述製造方法中’可使用噴墨法形成前述金屬 藉由使用喷墨法形成金屬配線，可謀求金屬配線之厚膜 化、或製造成本降低。 之尽膜 106728.doc 1304608 此情形，藉由偏移開始配置該液滴之位置之同時，反覆 於前述基板上纟以一定距㈣置含有形成前述金屬配線材 料之液滴之步驟，可防止各液滴之結合所造成之凸出產生。 本發明之半導體裝置，其特徵係使用上述製造方法而製 造。 藉由此半導體裝置，由於厚膜化突起電極而謀求品質穩 定之同時，且由於簡單化製造製程或低減使用材料而謀求 低成本化。 本發明之電路基板，其特徵係安裝上述半導體裴置。 藉由此電路基板，謀求品質穩定化及低成本化。 本發明之光電裝置，其特徵係具有上述電路基板。 藉由此光電裝置，謀求品質穩定化及低成本化。 本發明之電子機器，其特徵係具備上述光電裝置。 藉由此電子機器，謀求品質穩定化及低成本化。 【實施方式】 以下，參照圖面說明本發明之實施形態。另外，以下各 圖中，構造要素間之尺寸比率有時乃與實際不同。 [光電裝置] 圖1為例示本發明光電裝置之一眚絲游能^ 衣罝之只施形態之液晶顯示裝 置之模式圖。 圖示之液晶顯示裝置i 〇 〇係具有液晶面板i i 〇與半導體裝 置121。另外，應於其需要，可適當今罟 W田口又置未圖不之偏光板、 反射薄片、背光等之附帶構件。 液晶面板110係，具有以玻璃或塑膠等構成之基板Hi及 106728.doc 1304608 112。基板m與112乃對向配置著，且藉由未圖示之密封材 等相互貼合著。於基板111與基板丨12間密封著光電物質之 液晶（未圖示）。於基板111之背面上形成#IT〇(Indium Tin
Oxide)等之透明導通體構成之電極1Ua ;於基板112之背面 上形成對向配置於上述電極111a之電極112a。並且，電極 111a及電極112a乃以垂直之方式配置著。然後，電極1Ua 及電極112a乃引導到基板延伸部111T，並於其端部各形成
電極端子lllbx及電極端子mcx。再者，於基板延伸部1UT 之端緣附近形成輸入配線11 Id，且於其内端部形成端子 llldx 〇 於基板延伸部111T上，藉由密封樹脂122安裝半導體裝置 121。此半導體裝置121係例如為驅動液晶面板丨1〇之液晶驅 動用1C晶片。於此半導體裝置121下面，形成未圖示之多數 突起電極，此等突起係各導通連接於基板延伸部1UT上之 端子 11 lbx、11 lex、11 ldx。 另外，於形成於輸入配線llld外端部之輸入端子llldy， 藉由各向異性導電膜124安裝可撓性配線基板123。輸入端 子llldy係，各導通連接於設置於可撓性配線基板123之未 圖示之配線。然後，藉由可撓性配線基板丨23，從外部將控 制信號、影像信號、電源電位等提供給輸入端子111(^，並 於半導體裝置121生成液晶驅動用之驅動信號，以提供給液 晶面板11 0。 藉由上述構成之本實施形態之液晶顯示裝置i00，藉由半 導體裝置121可於電極丨i la與電極i 12a之間施加適當之電 】06728.doc -10- 1304608 f ’使對向配置兩電極⑴a、112a之像素部分之液晶重新 定向而可調制光’藉由此’可排列於液晶面板丨湖之像素 之顯示區域形成期望之影像。 圖2為圖1之Η·Η線中之側面剖面圖，且為上述液晶顯示 裝置100中之半導體裝置121之安裝構造說明圖。如圖2所 不’於半導體裝置121之主動面（圖示下面），作為IC側端子 而設置複數突起電極Π)’且其前端乃直接導通接觸上述基 板ill之端子mbx、llldx。於突起電極1〇與端子nibx、 11 ldx之間之導通接觸部分周圍，充填著以熱硬化性樹脂等 所組成之已硬化之密封樹脂丨22 [半導體裝置] 其次，說明半導體裝置121之端子構造。圖3為例示形成 端子之半導體裝置121之主動面側構造之部分立體圖。 半導體裝置121係，例如為驅動液晶顯示裝置像素之…晶 片，於其主動面側形成薄膜電晶體等之複數電子元件或連 接各電子元件間之配線等之電子電路（積體電路）（全未圖 示）。 圖3所示之帛導體裝置121中，沿著其主動面ma之長邊 整列配置複數電極墊24。此電極墊24係從上述電子元件等 引導出者，且作為電子電路之外部電極而機能者。另外， 於主動面121a中之電極墊列24a内側，沿著其電極墊列24& 形成連續直線狀之樹脂突起12。再者，從各電極墊Μ表面 至樹脂突起12表面，形成作為連結各電極墊24與樹脂突起 12頂部之金屬配線之複數導電膜2〇。然後，包含作為芯之 106728.doc 1304608 树月曰犬起12 ’與配設於樹脂突起丨2表面之各導電膜2〇，而 構成突起電極10。並且，於圖3之例中，於電極墊例24a内 - 側配置樹脂突起12，但亦可於電極墊列24a之外側配置樹脂 • 突起12。 . 圖4為例不突起電極10之要部構造圖，圖4(a)為突起電極 周邊之平面放大圖；圖4(b)為圖4(a)2A-A線中之側面剖面 圖。 • 如圖4所示，於半導體裝置12丨之主動面丨2“之周邊部， 排列形成由A1等之導電性材料構成之複數電極墊24。另 外於半導體裝置121之整體主動面，形成由SiN等之電性 絶緣性材料構成作為保護膜之鈍化膜26，且於上述各電極 塾24之表面’形成鈍化膜26之開口部26&。 其為保護膜26之表面，且於電極墊列24a之内侧形成樹脂 突起12。樹脂突起12係，從半導體裝置121之主動面12；^突 出而形成，且以大致相同高度直線延展著，且與電極墊列 Φ 24a平仃配設著。此樹脂突起12係，由聚醯亞胺樹脂或丙烯 -文類树知酚树知、環氧樹脂、矽樹脂、變性聚醯亞胺樹 ； 脂等之具有彈性之樹脂材料構成，且使用噴墨法形成。樹 月曰突起12之剖面形狀係，最好做成如圖氕…所示之半圓狀或 • #形等之易於彈性變形之形狀。如此，與相反側基板抵接 時可使突起電極10易於彈性變形，且也可提高與相反側基 板之導通連接之信賴性。 另外，從各電極墊24之表面至樹脂突起12之表面，形成 連結各電極塾24與樹脂突起12頂部之作為金屬配線之複數 】06728.doc •12- 1304608 導電膜20。此導電膜20係，例如由Au、Ag、Tiw、cn
Pd、、A\、Cr、Ti、W、NiV等或無料接等之導電性材料1 所 組成。導電膜20於本例中也使用噴墨法形成，但亦可使用 其他方法形成。藉由蒸著或濺鑛等，成膜例如Ahm 等之導電性金屬，並以適當使用適宜之圖案化處理而構 成。另外，更進一步以Au電鍍等覆蓋以Cu、Ni、Μ等構成 之基底導電膜表面，故可提高導通接觸性。 尚且，導電膜20係，挾持樹脂突起12從電極墊以延伸設 置於相反側，於此相反側與主動面121a密著著。亦即，導 電膜20係，密著於樹脂突起12外侧中之各電極墊24表面之 同時，經由樹脂突起！2表面，形成到樹脂突起12内側中之 主動面121a，並於配置於此内側主動面121&之保護膜^間 形成密著面。因此，導電膜2〇係，於挾持樹脂突起12之兩 側而固定於主動面，故成為與相反側基板接合時不易產生 剝離之構造。導電膜20之形狀係，不限於此而可變形，導 電膜20係，亦可形成至少涵蓋於電極墊24與樹脂突起丨之之 頂部間。 如先前圖1所示，上述突起電極10係介由密封樹脂122而 熱壓著於基板111上之端子lllbx。密封樹脂122為熱硬化性 樹脂，但於安裝前呈現未硬化狀態或半硬化狀態。若密封 树脂122為未硬化狀態，於安裝前塗佈於半導體裝置12 i之 主動面（圖示下面）或基板ln表面即可，或者若密封樹脂122 為半硬化狀態，則做成薄膜狀或薄片狀，再插入於半導體 裝置121與基板ill間即可。密封樹脂122係可使用一般環氧 106728.doc -13- 1304608 樹脂，但若可達到相同目的者，亦可使用其他樹脂。 半導體裝置121之安裝係，使用未圖示之加熱加壓喷頭在 基板111上加熱半導體裝置121之同時，再加壓進行處理。 此時饴封树月曰122係於初期時藉由加熱軟化，並以按麼此 軟化樹脂之方式，使突起電極1〇頂部導通接觸於端子 lllbx。然後，藉由上述加壓，内部樹脂之樹脂突起η乃受 到推押而往接觸方向（圖示上下方向）彈性變形。然後，以此 狀態更持續加熱，則密封樹脂122乃因架轎且熱硬化，故即 使解開加壓力藉由密封樹脂122，突起電極1〇乃導通接觸於 端子11 lbx且保持彈性變形之狀態。 [半導體裝置之製造方法] 其次，關於本發明之半導體裝置之製造方法，特別說明 形成上述突起電極10之步驟。 圖5(a)〜(C)為例示半導體裝置121之製造方法一例之步驟 圖。此製造步驟係含有形成保護膜26之步驟（圖、形成 樹脂突起12之步驟（圖5(b))與形成導電膜2〇之步驟（圖 5(c))。本例中，樹脂突起12及導電膜2〇乃使用噴墨法而形 成。 首先，如圖5(a)所示，於形成半導體元件之基板p之主動 面121a上形成保護膜26。亦即，藉由成膜法於基板p上形成 Si02或SiN等之保護膜26後，藉由使用光微影法之圖案化形 成開口部26a°開口部26仏形成係、可藉由旋轉塗佈法、浸 潰法、噴霧塗佈法等於保護膜26上形成光阻層，更使用形 成特定圖案之光罩對光阻層進行曝光處理及顯影處理，而 106728.doc •14· 1304608 形成特定形狀之光阻圖案（未圖示）。其後，將此光阻圖案作 為光罩，進行前述膜之蝕刻而形成露出電極墊24之開口部 2 6 a ’再使用剝離液等除去光阻圖案。在此，餘刻乃最好使 用乾蝕刻，乾蝕刻乃可適當使用反應性離子蝕刻（RIE : Reactive Ion Etching)。蝕刻也可使用溼蝕刻。 其次，如圖5(b)所示，使用喷墨法於形成電極墊24及保 護膜26之基板P之主動面1213上，形成樹脂突起12。亦即， 從設置於喷頭301之喷嘴325吐出（滴下）控制約1滴液量之液 滴狀樹脂材（液體材料）之同時，使喷嘴325對向於基板p， 並且藉由相對移動喷嘴325與基板P，於基板p上形成所期望 形狀樹脂材之膜圖案。然後，藉由熱處理此膜圖案，可獲 得樹脂突起12。 在此，藉由從噴頭301滴下複數液滴並進行配置樹脂材， 可任意設定由樹脂材構成膜之形狀之同時，也可形成積層 樹脂材達成樹月旨突起12之厚膜化。例如，#由反覆進行二 基板P上配置樹脂材之步驟與乾燥樹脂材之步驟，樹脂材之 乾燥膜乃積層而樹脂突起12乃確實厚膜化。另外，藉由從 設置於喷頭3(H之複數喷嘴325滴下含有_材之液〇 控部各部分樹脂材之配置量或配置時間。另外，於後說明 使用噴墨法之材料配置之詳細例。 其次，如圖5(e)所示，從電極墊24表面至樹脂突起邮 面道形成連結電極塾24與樹脂突起12頂部之作為金屬配線 之導電膜2〇。亦即’從設置於喷頭3〇1之喷嘴奶吐出（滴下） 控制約1滴液量之液滴狀樹脂材(液體材料)之同時，使喷嘴 106728.doc 15 1304608 '子向於基板P，並且更藉由相對移動喷嘴與基板p， 於基板p上形成膜圖案。’然後’藉由熱處理此膜圖案，可碎 得導電膜20。 & 在b藉由從喷頭3〇1滴下複數液滴並進行配置樹脂材， 可任意設定含有導電材料之膜之形狀，且亦可形成因積層 其膜達成導電㈣之厚膜化。例如，藉由反覆進行於基板p 上配置導電材料之步驟與乾燥導電材料之步驟，導電材料 之乾燥膜乃積層而導電膜20乃確實厚膜化。另外，藉由從 設置於喷㈣丨之複㈣嘴奶，滴下含有導電材料之液 滴二即可控部各部分導電材料之配置量或配置時間。 藉由上^驟’將樹脂材作為芯之突起電極1〇乃形成於 基板P上，且製造含有突起電極1G之半導體裝置⑵。， 於導電膜20之表面，可报&甘# ^ ㈣了形成其他導電膜，亦可形成具有防 止氧化等特定機能之機能膜。 藉由此半導體裝置之贺古 +』 策以方法，可以喷墨法形成為突起 1 1〇之芯之樹脂材，故可易於達成突起電極1G之厚膜 化、或製造成本降低。、 亦即，藉由噴墨法可於其 、土板p上之期望局部區域配置材 料，相較於光微影法等’其膜形成之製程乃簡 使用材料，並且可控制各部分之材料配置量或配置時間費 故可因應於使特㈣性而謀求材 並且，此製造方法中，導電腺鳩 /膜化 κ +、# β 導電膜20也以贺墨法形成，故也 可谋求導電膜20之厚膜化、或製造成本降低。 其結果’藉由此製造方法所製造之半導體裝置121係，因 106728.doc 1304608 突起電極 製造製程 圖6係， 圖〇 、之厚膜化而可達到品質之穩定化，且因簡單化 或低減化使用材料而可謀求低成本化。 例示使用於噴墨法之喷墨裳置IJ之概略構造立體 、、商ΓΓ墨裝置u係’從液滴吐出噴頭（噴墨頭）之噴嘴吐出液 料墨水者’且含有液滴吐出噴頭301、X軸方向驅動 04、γ軸方向導引軸305、控制裝置c〇N丁、平台3〇7、 清洗^構烟、基台3G9及加熱器315而構成。 平口 307係’支持著由此喷墨裝置ijr配置墨水（液體材料） 之基板p(本例中為半導體裝置121)者，且具備將基板p固定 於基準位置之未圖示固定機構。 液滴吐出噴頭3〇卜含有複數吐出喷嘴之多頭噴嘴型之液 滴吐出噴頭，且長邊方向於軸方向乃一致。複數喷嘴係於 =滴^出噴頭301之下方，並排於γ軸方向且以一定之間隔 叹置著。從液滴吐出噴頭3〇1之吐出噴嘴，對支持於平台3 07 之基板P吐出（滴下）墨水。 於X軸方向驅動軸304，連接著X軸方向驅動馬達3〇2。χ 軸方向驅動馬達302為步進馬達等，並一旦從控制裝置 CONT賦與X軸方向之驅動信號，旋轉χ軸方向驅動輛取。 X軸方向驅動軸304旋轉時，液滴吐出喷頭3〇1係往χ軸方向 移動。 Ρ Υ軸方向導引軸305係以對向基台309不動之方式固定 著。平台3G7係具備γ軸方向驅動馬達3G3。γ轴方向驅動: 達303為步進馬達等，並從控制裝置c〇nt賦與γ轴方向之 106728.doc 17 1304608 驅動信號時，將平台307往γ軸方向移動。 控制裝置CONT係，提供液滴之吐出控制用電壓給液滴吐 出噴頭3〇1。並且，提供控制液滴吐出噴頭3〇1之X軸方向移 動之驅動脈衝信號給X軸方向驅動馬達3〇2;提供控制平台 之Υ軸方向移動之驅動脈衝信號給丫軸方 303 〇 清洗機構308為清洗液滴吐出噴頭训者。於清洗機構 308 ’具有未圖示之丫軸方向驅動馬達。藉由驅動此γ軸方 向驅動馬達，清洗機構❹打軸方向導引軸3G5移動。清 洗機構308之移動也受到控制裝置c〇nt之控制。 加熱器315係，在此為藉由燈退火熱處理基板p之方法， 且進行蒸發及乾燥包含配置於基板p上之液體材料之溶 煤。此加熱器315之電源投入及切斷也受到控制裝置c〇nt 之控制。 圖7為說㈣由㈣方叙㈣材料吐丨原理之液滴吐 出噴頭之概略構造圖。 “回中隣接於收納液體材料（墨水）之液體室321設置壓 “一件322藉以合有收納液體材料之材料儲槽之液體材料 供給系323,提供液體材料給液體室321。壓電元件μ]係連 接^驅動電路324，藉以此驅動電路324對壓電元件322施加 電£，而使壓電疋件變形而彈性變形液體室Ml。然後，藉 由此彈II k形時之内部容積變化，從喷嘴吐出液體材 料。此情形’藉由變化施加電壓之數值，可控制壓電元件 扁移里另外，藉由變化施加電壓之頻率數，可控制 106728.doc -18- 1304608 I電元件322之偏移速度。經由壓電方式之液滴吐出係不對 材料加熱’故有不對材料組成造成影響之優點。 回到圖6’於噴墨裝置„中，相對地掃描移動支持噴頭3〇1 與基板Ρ之平台3〇7之同時，從喷頭3〇1對基板ρ吐出（滴下） 液滴狀之液滴材料。噴頭3〇1之吐出噴嘴係，至少於非掃描 方向之Υ軸方向以一定間隔並排設置著（χ軸方向：掃描方 向、γ軸方向：非掃描方向）。圖6中，液滴吐出喷頭3〇1係， 對基板Ρ之進行方向呈現直角配置著，但亦可調整液滴吐出 噴頭30 1之角度，使其對基板ρ之進行方向交叉亦可。如此， 藉由調整液滴吐出噴頭3〇1之角度，可調節噴嘴間之間距。 另外亦可做成可任意調節基板ρ與喷嘴面之距離。 在此，說明本例所使用且適用於從液滴吐出喷頭之吐 出之墨水（液體材料）。 —本實施形態所使用之墨水（液體材料）為使樹月旨材溶解於 命媒之洛解液(樹脂突起之液體材料)、或使導電性微粒子分 散於分散媒之分餘（導電膜之㈣材料）、或由其前身所组 成者°作為導電性微粒子，&了可使用例如含有金、銀、 銅！巴1¾及錦等之金屬微粒子之外，也可使用此等之前 身:合金、氧化物及導電性聚合物或姻錫氧化物等之微粒 子等。此等導電性微粒子，係為提高分散性而也可於表面 塗佈有機物等再使用。^電性微粒子之粒徑最好為丄 ㈣〜0.1 μηι右左。超過〇·ι _時’不僅喷頭301之噴嘴可能 產生阻塞，製成之膜夕 膘之精在、性可能劣化。另外，比1 ηπΗ、 時，對導電性微粒子夕分W ^ 于之塗佈劑之體積比乃變大，製成之膜 106728.doc -19- 1304608 中之有機物比率則呈現過多。 作為溶媒或分散媒，可為溶解上述樹赌或分散上述導電 性微粒子者，且只要不引起凝集者乃無特別限定。例如可 例示水、甲醇、乙醇、丙醇、丁醇等之醇類、正丁烷、 η-辛貌、癸m14院、1?苯、二甲苯、甲基異丙基 苯、暗媒、節、雙戊稀、四氣化萘、十氫化奈乙二醇、環 已基苯等之烴系化合物；或乙二醇二甲醚、乙二醇二乙醚、 乙二醇甲基乙基醚、二乙二醇二甲醚、二乙二醇二乙醚、 --乙 酉子甲乙基、12- -甲Jhb： 土 a 一 f氧基乙烷、雙（2-甲氧基乙基） 醚、P-二噁烷等之醚系化合物、再者，碳酸丙烯醋、丁内 酉旨、Ν-甲基·2,倾酮、二甲基甲醯胺、環己_等之極性 化合物。 另外，於墨水中也可含有適當之填料或黏結劑。例如乙 烯系矽烷偶合劑之外，尚可例示胺基系、環氧系、甲基丙 醯氧系、氫硫基系、酮亞胺系、陽離子系等之胺基系之矽 燒偶合劑。另外，含有鈦，酸鹽系、鋁酸鹽類系之矽烷偶合 劑亦可。其他，含有纖維素系、矽氧烷、矽油等之黏結劑 亦可。藉由含有如此之添加劑，而謀求分散性提高、與基 底之密著性提高、膜之平坦性提高等。 墨水之表面張力最好在0·02Ν/πι〜0.07N/m之範圍内。以 噴墨法吐出液體時，表面張力小於〇 〇2 N/以時，因墨水組 成物對喷嘴面之沾濕性增大，故易產生飛濺彎曲；表面張 力超過0.07 N/m時，因噴嘴前端之彎月形狀不穩定，故吐 出量或吐出時間難以控制。為了調整表面張力，而以不讓 106728.doc -20- 1304608 與基板之接觸角大φ5疮$ , ^ 化度減低之範圍，可於墨水中微量添加 氟系石夕系、_系、非離子系等之表面張力調節劑。非離 子系表面張力調節逾丨技 ^ ρ ^係’楗兩液體對基板之沾濕性，且改 善膜之整平性，可助於防止膜之微細凹凸產生。上述表面 張力調節劑係’因應於必要亦可含有醇、喊、醋、_等之 有機化合物。 墨水之黏度最好為lmPa.s〜50mPas。使用喷墨法吐出液 滴材料之液滴時，黏度乃比lmpas小之情形，噴嘴周邊部 乃因墨水之流出而易受到污染；又黏度乃比50 mPa.s大之情 形’喷嘴孔之阻塞頻率乃變高，導致較難吐出圓滑之液滴 且液滴之吐出量乃減少。 圖8係’例示使用噴墨法於基板上形成線狀膜圖案之一步 驟例之模式圖。 各圖所不之材料配置步驟中，從喷頭％丨將液體材料形成 、茼而土出各以一疋之距離（間距）於基板p上配置其液 滴…、後，反覆此液滴之配置動作，於基板？上形成膜圖案。 圖8之例中，首先如圖8⑷所示，以各液滴U乃於基板P 上相互不接觸之方式，隔開—定之間隔，於基板匕配置從 喷頭30 1吐出之液滴L1。亦即，以比剛配置於基板p上之液 滴U之直徑大之間距？1，依序於基板p上配置液滴u。 於基板P上配置L1後，為了進行除去溶媒或分散媒，因應 必要而進行乾燥處理。乾燥處理係，例如利用熱平板、電 氣爐等之加熱方法之一般加熱處理之外，亦可利用燈退 火。作為使用於燈退火之光之光源，，雖然無特別限定，但 106728.doc 21 1304608 也可使用紅外線燈、照明用燈泡、YAG雷射、氬雷射、二 氧化碳雷射、XeF、XeCl、XeBr、KrF、KrCl、ArF、ArCl 等之電激分子雷射等。 另外’乾燥處理係可與液體材料之吐出同時並進。例如， 藉由預先加熱基板，或於冷卻液體吐出喷頭之同時使用沸 點較低之溶媒或分散媒，於基板配置液滴後，立即進行使 其液滴乾燥。 其次，如圖8(b)所示，反覆上述液滴配置動作。亦即， 與上次圖8(a)所示之相同，從喷頭3〇1將液體材料形成液滴 L2而吐出，各以一定之距離於基板p上配置其液滴Q。此 時’各液滴L2之距離間隔係與上次相同（間距p2=p丨），且各 液滴L2乃相互不接觸。另外，從配置上次之液滴。之位置， 僅以特定距離S 1偏移開始配置液滴L2之位置。亦即，配置 於基板P上之上次液滴L1之中心位置，與此次液滴L2之中心 位置係，僅相距上述距離S1之位置關係。此偏移距離（位移 量si)係，於本實施形態例中，規定著比上述間距η、 更狹窄⑻化：叫’且於已配置於基❹之液紅卜接下 來之液滴L2乃一部重疊。 於基板P上配置液滴L2時，此次液滴L2與上次液滴。乃 接觸著’但上次液滴L1係已完全或某種程度除去溶媒或分 散媒’故兩者不會結合而於基板p上擴散開。 尚且，於圖8(b)中，將開始配置液滴匕2之位置作成與上 次相同側（圖8(b)所示之左側），但φ可作為相反側_㈨ 所示之右側）。此情形，可減少喷頭3〇1與基板ρ之相對移動 106728.doc •22- 1304608 距離。 另外，於基板p上配置液滴⑽，因進行除去溶媒或分散 媒’故與上次相同因應必要而進行乾燥處理。此情形也不 僅除去溶媒或分散媒，-直到分散液轉換為導電膜，即使 提高加熱或光照射之情形也無妨，但只要某程度除去溶媒 或分散媒即可。 —其後’如圖8⑷所示，複數次反覆上述液滴配置動作。於 母次，配置之各液滴Ln之距離間隔（間距pn)係，與最初次 之距離相同（間距Pn=P1)始終為固定。因此，配置於基板p 上後之各液滴Ln乃不會接觸，故可抑制各液滴結合並於基 板P上擴散開。尚且，藉由預先將基板p之表面加工成撥液 性，可抑制配置於基板p上之液滴擴散。然後，藉由上下重 疊配置各液滴，可增加配置於基板p上之液體材料厚度。 另外，於圖8(c)中，於複數反覆液滴配置動作之同時，於 每次將開始配置液滴Ln之位置，從配置上次液滴之位置僅 偏移特定距離。藉由反覆此液滴之配置動作，配置於基板p 上之各液滴間隙乃受到填補，而形成線狀之連續圖案。尚 且’形成於基板上之膜圖案係，藉由始終以相同間距之液 滴配置而形成，經由整體幾近相同之形成過程，故構造乃 成為均質者。 圖9及圖1 〇係例示形成於基板p上之膜圖案之一例。於圖9 及圖10之例中，於噴頭301乃一行排列複數喷嘴325，並選 擇性使用此等複數噴嘴325中之至少一個喷嘴（本例中為三 個噴^ ) ’朝向基板p吐出液體材料。 106728.doc -23-
1304608 圖9所不之例中，於反覆液滴之配置動作時，將開始配 置液滴Ln之位置往與複數噴嘴325之配例方向垂直之方向 偏移。亦即，如圖9(a)所示，以特定間距p3於基板p上配置 液滴h之同時，如圖9(b)所示，於與喷嘴325之配例方向垂 方向從開始地點僅偏移特定距離S，且反覆液滴Ln -置動作藉由此，於基板P上，形成連續於與複數喷頭 325之排列方向垂直之方向之圖案。 另外此情形藉由同時從噴頭301之複數喷嘴325中之3 個噴备吐出液體材料，形成3條線狀之圖案。 圖所示之例中，於反覆液滴Ln之配置動作時，將開始 移。亦即，如《1〇⑷所示，以特定間距p3於基板p上配置 液滴Ln之同時；如圖1〇(b)所示，於與喷嘴奶之排列方向 w /亍從開始地點僅偏移特定距離s，且反覆液滴[η之配置 動作。精由此’於基板？上形成連續往複數喷嘴325之排列 方向之圖案。 匱形，因應於配置於各特定間距p3之液滴數， 形成複數條線狀之圖案。 尚且，藉由以相互重疊各圖9及圖1〇所示之複數線狀圖案 之方式形成’可於基板上面狀形成液體材料之膜。 =者偏移液滴配置之開始地點之量（位移量）或其偏移 _ +隈疋於上述例者。例如，反覆液滴之配 置動作時，亦可將開私 ° -置液滴之位置，對著複數喷嘴325 之排列方向往斜面方& 、 向偏移。此情形，可形成對複數喷嘴 106728.doc -24- 1304608 325之排列方向往斜面方向連續之圖案。 如此’以喷墨法藉由適當設定各使用之噴嘴、液滴之配 置間距、開始地點之偏移距離（位移量）、偏移方向（位移方 向）等，可於基板上形成各種形狀之膜。 另外，藉由適當控制液滴量、液滴配置間距及基板表面 沾濕性之各參數之組合，可形成更良好形狀之膜。 圖1 1係，例7F使用喷墨法於基板上形成線狀膜圖案步驟 之其他例之模式圖。 此材料配置步驟中，含有於基板上形成複數線狀圖案之 第1步驟（圖11(a))，與使其複數線狀圖案一體化之第2步驟 (圖 11(b)) 〇 第1步驟中，如圖11(a)所示，從喷頭3〇1將液體材料形成 液滴再吐出，並各以一定之距離（間距）於基板p上配置其液 滴。然後，藉由反覆此液滴之配置動作，於基板1>上形成複 數（本例為2條）線狀之圖案wi、W2。 液滴之吐出條件，特別為液滴之體積及液滴之配置間距 係，以形成於基板P上之線狀圖案W1、冒2之緣部形狀可成 為凸凹微小之良好狀態之方式設定著。並且，基板p之表面 乃預先加工成撥液性，故可抑制配置於基板p上之液滴擴 散，其結果，可確實將線狀圖案之緣部形狀控制成上述良 好狀態。 複數線狀圖案Wl、W2係，可2條同時形成或可1條條形 成。另外’ 1條條形成複數線狀圖案W1、W2之情形，比2 條同時形成之情形，因乾燥處理之次數合計會增加，故以 106728.doc -25- 1304608 不破壞基板p之撥液性之方式，設定乾燥處理即可。 另外，本例中複數線狀圖案W1、W2係雖然配置於相互間 離之位置，但亦可配置成相互一部重疊。 其次，於第2步驟中如圖u(b)所示，從噴頭3〇1將液體材 料形成液滴吐出，並於複數線狀圖案W1、W2間配置其液 滴’一體化各複數線狀圖案Wi、W2。
圖12(a)〜(c)係於上述第2步驟中，各例示於複數線狀圖案 W1、W2間配置複數液滴之例。 圖12(a)之例中，與前述第丨步驟相同之吐出條件，於複數 線狀®#W1、…間配置複數液滴Ln。亦即’與第i步驟相 同之體積及配置間距’將複數液滴Ln配置於複數線狀圖案 Wl、W2間，並複數次反覆此配置動作。於複數線狀圖案 W1 W2間，形成將各線狀圖案w丨、W2作為壁之凹部，複 數液滴Ln乃依序收納於此凹部内部。 液滴之配置動作，係例如反覆到液滴（液體材料）滴滿上 述凹部。另外，第2步驟中，每反覆—連續液滴之配置動作 時，雖然可與第丨步驟相同地進行除去分散媒之乾燥處理， 但亦可省略乾燥處理。亦即，第2步驟中，尚未乾燥之各液 滴即使重疊於基板上，因複數線狀圖案们、成為辟，古 可防止於基板p上之擴散。藉由省略乾燥處理，可謀求生= 量之提高。 ®!2(b)之例中，與前述第i步驟之吐出條件不同 於第1步驟，增大液滴Ln之體積。亦 乂 106728.doc -26 - 13〇4608 相同。藉由增大液滴Ln之體積，複數線狀圖案wi、w、2 所形成之凹部係可以短時間内藉由液滴填滿。 …圖i2(c)之例中，與前述第丨步驟之吐出條件不同，相較於 第1步驟，縮短液滴Ln之配置間距。並且，液滴&之體積係， 可與第1步驟相同’或可如圖12(b)所示比第巧驟增大。藉 由縮短液滴之配置間距，約—單位面積之液滴之配置量^ 增^ ’故由複數線狀圖案WhW2所形成之凹部係可於短時 間藉由液滴填滿。 回到圖11(b)，於複數線狀圖案臂卜W2間配置複數液滴， 藉由以液滴(液體材料)填滿其間之凹部，並一體化各複數線 、囷案W1 W2 ’而形成1條線狀圖案W。此線狀圖案W之 線寬係，因包含預先形成之複數線狀圖案W1、之各線 寬，故可達到廣線寬者。 此h开y因應於第1步驟形成之複數線狀圖案wi、W2之 距離間隔，決定最終線狀圖案w之線寬”亦即，藉由改變 第1步驟形成之複數線狀圖案之距離間隔，而可控制一體化 後之最終線狀圖案W之寬度。 另外藉由改變從第1步驟形成之複數線狀圖案Wl、W2 之基板表面起之局度（厚度），而可控制一體化後之線狀圖案 w之膜厚。例如，藉由增加第1步驟所形成之複數線狀圖案 W1 W2之阿度，更可易於增加一體化後之線狀圖案w之膜 厚。 口並且本例中雖然於第1步驟中形成2條線狀圖案，但亦 可y成3條以上之線狀圖案。藉由增加一體化之線狀圖案數 106728.doc -27- 1304608 里，而可易於形成更廣線寬之線狀圖案。 —於基板上配置墨水時，藉由預先將基板表面加工成對液 體材料具有撥液性，可抑制配置於基板上之液滴擴散，且 可謀求膜之厚膜化及形狀之穩定化。 於此撥液化步驟中，將形成膜之基板表面加工成對液體 材料具有撥液性。具體說明，以對液體材料之特定接觸角 可成為6G[deg]以上，但最好為9〇[deg]以上11G[deg]以下之 方式，進行表面處理。 作為控制表面之撥液性（沾濕性）之方法，例如可採用於 基板表面形成自己組織化膜之方法、電漿處理法等。 於自己組織膜形成法中，於應形成膜之基板表面，形成 由有機分子膜等所組成之自己組織化膜。 處理基板表面之有機分子膜係具備可結合於基板之功能 基’與於其相反側變質親液基或疏液基等之基板表面性之 (控制表面能量）功能基，與連結此等功能基之炭之直鍵或一 部分岐之炭鏈，並結合於基板再自己組織化形成分子膜， 例如形成單分子膜。 在此’所謂自己組織化膜係，由可與基板等基底層等構 成科產生反應之結合性功能基與其以外之直鏈分子形 成’藉由該直鏈分子之相互作用使具有極高配向性之化合 物配向而形成之膜。此自己組織化膜係，酉己向單分子而形 成，故可將膜厚做得極薄且形成分子位準均一之膜。亦即， 於膜之表面存有相同分子，故可賦與膜之表面均—且優 之撥液性或親液性。 106728.doc •28- 1304608 作為具有上述高配向性之化合物係，例如藉由使用氣烧 基石夕炫，以於膜表面存有說烧基之方式，配向各化合物而 形成自己組織化膜’並賦與膜之表面均一之撥液性。 作為形成自己組織化膜之化合物係可舉出十七氟_ ’1:2,2四氫癸基二乙氧基矽烷、十七氟四氫癸基三 甲氧基石夕院、十七m，2,2四氫癸基三氯石夕燒、十三氣· U’2,2lZ9氫辛基三乙氧基矽烷、十三氟-1，1，2,2四氫辛基三 甲氧基矽烷、十三氟]，四氫辛基三氯矽烷、三氟丙基 三甲氧基矽烷等之氟烷基矽烷（以下稱為"FAS")。使用時， 可單獨使用-個化合物’亦可組合2種以上之化合物使用。 另外，藉由使用FAS，可獲得與基板之密著性與良好之撥液 性。 FAS係一般以構造sRnSix(4_n)表示。在此，以上3 以下之整數’X為甲氧基、乙氧基、鹵素原子等之加水分解 基。另外，R爲氟烷基，且持有（CF3)(CF2)x(CH2)y2 (在此， X為0以上10以下之整數，7為〇以上4以下之，整數）構造，複 數個R或X乃與Si結合之情形，尺或又係可各自全部相同或不 同。以X表示之加水分解基係藉由加水分解形成矽醇，並與 基板（玻璃、矽）等之基底之羥基產生反應，而以矽氧烷結合 與基板結合。另外，R係於表面具有（CF3)等之氟元素基， 故變質成不沾濕基板等之基底表面（表面能量低）之表面。 由有機分子膜等構成之自己組織化膜係，預先於相同之 密封容器中放入上述原料化合物與基板，於室温之情形則 放置2〜3天左右即於基板上形成。另外，藉由將密封容器整· 106728.doc -29- 1304608 體保持㈣〇t，約3小時左右即於基板上形成。以上所述 者係由風相構成之形成法，但亦可由液相形成自己組織化 膜:例如，於含有原料化合物之溶液中浸潰基板後再洗淨 乾蚝，即可於基板上獲得自己組織化膜。 尚且’於形成自已組織化膜前，最好於基板表面照射紫 外光或藉由溶媒洗淨，再進行前項處理。 電漿處理法係於常壓或真空中對基板電漿照射。使用於 電漿處理之氣體種類，係考量應形成導電膜配線之基板之 表面材質等後可做各種選擇。作為處理氣體係例如可例示4 氟化甲烷、全氟已烷、全氟癸烷等。 另外，將基板表面加工成具有撥液性之處理係，可藉由 於基板表面貼黏具有希望之撥液性之薄膜，例如四氟化乙 烯加工之聚醯亞胺薄膜辇而#分 士 *，寻朕寺而進仃。另外，亦可將聚醯亞胺 薄膜作為基板使用。 再者，於基板表面具有比希望之撥液性更高撥液性之情 形，藉由照射170〜400 nm之紫外光或將基板放置於臭氧環 境，再進行親液化基板表面之處理並控制表面之狀態即可。 圖13為例示形成端子之半導體裝置121之主動面側構造 之其他例子之部分立體圖。並且，對與上述實施形態相同 之構造要素標示相同之符號，並省略或簡略其說明。 先前圖3所示之半導體裝置121係於主動面^“上以大致 相同高度形成呈線狀延伸存在之樹脂突起12，而本實施形 態係’如圖13所示，於主動面121a上形成並排於大致相同 直線上之樹脂突起12。複數樹脂突起12係以}對丨對應電極 106728.doc -30- 1304608 塾24而排列形成，並於各樹脂突起12形成導電膜2〇。 藉由各突起電極10乃個別具有作為芯之樹脂突起12，於 女裒半導體裝置12 1時，各突起電極1 〇乃更確實地彈性變 形，故可謀求提高對側基板之導電連接之信賴性。並且， 於本發明之製造方法中，因使用喷墨法形成樹脂突起12， 故可易於形成間離配置如此島狀之複數樹脂突起12。 另外，複數樹脂突起12與電極墊24之配置關係乃不限於i 對1，亦可對多數個電極墊24配置i個樹脂突起12。 [電子機器] 其次，說明含有上述光電裝置或半導體裝置之電子機器。 圖14為例示本發明電子機器-例之立體圖。此圖所示之 行動電話胸係’具備將上述光電I置作為小尺寸之顯示 部麗，並具有複數操作按紹302、受話口删及送話口 13 04而構成。 〜〜电π，也週當作為具備 電子書、個人電腦、數位照相機、液晶電視、觀景 監控直視型錄影機/汽車衛星定位装置、啤叫器、PDA(個 人數位助理）、计具機、文字處里 子處理機、工作站、電視電話、 終端、觸摸面板之機器等之圖像顯示機構而使用，任 一情形都可提供電性連接之信賴性良好之電子機 以上^參照添附圖面說明本發明之適 本發明係不限定於此例。於上述例所 二 種形狀或組合等為一例，且於τ 、 傅^再1千之各 内，可根據設計之要求等做各種變:離本發明主旨之範圍 106728.doc 1304608 【圖式簡單說明】 圖1係例示光電裝置一實施形態之液晶顯示裝置之模式 圖。 圖2為液晶顯示裝置中之半導體裝置之安裝構造說明圖。 圖3為半導體裝置之立體圖。 圖4(a)(b)同為放大半導體裝置之端子部分之例示圖。 圖5(a)〜(c)同為說明半導體裝置製造方法之步驟圖。 圖6係例示喷墨裝置之概略構造之立體圖。 圖7為說明藉由壓電方式之液體材料吐出原理圖。 圖8(a)〜(c)係例示使用喷墨法於基板上形成線狀膜圖案 一步驟例之模式圖。 圖9(a)(b)係例示形成於基板上之膜圖案一例圖。 圖l〇(a)(b)係例示形成於基板上之膜圖案一例圖。 圖11⑷⑻係例示使用喷墨法於基板上形成線狀膜圖案 一步驟之其他例之模式圖。 ' 圖12(a)〜(c)係例示於複數線狀圖案間配置複數液滴之一 例圖。 圖13係例示半導體裝置之其他例之立體圖。 圖14係例示電子機器一例之立體圖。 【主要元件符號說明】 10 突起電極 12 樹脂突起 20 導電膜（金屬配線） 24 電極墊（電極端子） 106728.doc 32 1304608 24a 100 111 11lbx、11 lex、11ldx 121 121a 122 1300 電極墊列 液晶顯示裝置（光電裝置） 基板（電路基板） 電極端子 半i導體裝置 主動面 密封樹脂 行動電話（電子機器）
106728.doc -33 -

Claims (1)

130^¾¾46373號專利申請案 中文申請專利範圍替換本(97年3月） 十、申請專利範圍·· 一種半導體裝置之製造方 · 突起電極之半導體裝置者，且；辻：:其係為製造具有 作為芯並至少頂部係以導電者—以樹脂材 该製造方法係具備··於 由嗔黑法δ?番、，+ 4有電極端子之基板上，藉 由贺墨法配置丽述樹脂材之步驟；與 形成連結前述電極媸； 線之步驟。 "子及"述樹脂材之頂部之金屬配 2·如請求項1之半導體裝置 方 叉Ik方法，其係猎由從吐出機 構滴下複數液滴，以進行前述樹赌材之配置。 3. 如請求項2之半導體裝置之製造方法，其中前述吐出機構 係具有液滴吐出用之複數喷嘴。 4. 如請求項1至3中任-項之半導體裝置之製造方法，其係 反覆進行配置前述樹脂材之步驟與乾燥前述樹脂材之步 驟。 5·如請求項1至3中任一項之半導體裝置之製造方法，其係 具有於配置前述樹脂材前，將前述基板表面之至少一部 分區域對前述樹脂材加工成具有撥液性之步驟。 6·如請求項1至3中任一項之半導體裝置之製造方法，其係 藉由前述樹脂材之配置，以於前述基板上形成以大致相 同高度呈線狀延伸存在之樹脂突起。 7·如請求項1至3中任一項之半導體裝置之製造方法，其中 藉由前述樹脂材之配置，以於前述基板上形成並排於大 致相同直線上之複數樹脂突起。 106728-970328.doc 1304608 η 8. 如請求項1至3中任一項之半導體裝置之製造方法，其係 使用噴墨法形成前述金屬配線。 9. 如請求項1至3中任一項之半導體裝置之製造方法，其係 • 自開始配置該液滴之位置起一面移位、一面反覆進行將 . 含有前述金屬配線之形成材料之液滴各以一定距離配置 於前述基板上之步驟。 10. 如請求項1至3中任一項之半導體裝置之製造方法，其係 * 用於半導體裝置之製造。 ▼ 11.如請求項1至3中任一項之半導體裝置之製造方法，其係 用於電路基板之製造。 12.如請求項1至3中任一項之半導體裝置之製造方法，其係 用於光電裝置之製造。 13 ·如請求項1至3中任一項之半導體裝置之製造方法，其係 用於電子機器之製造。
106728-970328.doc
TW094146373A 2005-01-12 2005-12-23 Manufacturing method of semiconductor device, semiconductor device, circuit board, electro-optic device, and electronic apparatus TWI304608B (en)

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