TWI299530B - - Google Patents
Download PDFInfo
- Publication number
- TWI299530B TWI299530B TW91112080A TW91112080A TWI299530B TW I299530 B TWI299530 B TW I299530B TW 91112080 A TW91112080 A TW 91112080A TW 91112080 A TW91112080 A TW 91112080A TW I299530 B TWI299530 B TW I299530B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- forming
- layer
- substrate
- semiconductor substrate
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 97
- 239000002184 metal Substances 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 94
- 239000004065 semiconductor Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 53
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 42
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 29
- 150000005309 metal halides Chemical class 0.000 claims description 28
- 229910001507 metal halide Inorganic materials 0.000 claims description 27
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 22
- 125000006850 spacer group Chemical group 0.000 claims description 21
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 20
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 18
- 229910052707 ruthenium Inorganic materials 0.000 claims description 18
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 12
- 229910017052 cobalt Inorganic materials 0.000 claims description 12
- 239000010941 cobalt Substances 0.000 claims description 12
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 11
- 238000005496 tempering Methods 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 239000004575 stone Substances 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 6
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical group [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- -1 polyphenylene Polymers 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 3
- 239000007795 chemical reaction product Substances 0.000 claims 2
- 229910052755 nonmetal Inorganic materials 0.000 claims 2
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical group [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 claims 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims 1
- QWAUSPYZWIWZPA-UHFFFAOYSA-N [Co].[Bi] Chemical compound [Co].[Bi] QWAUSPYZWIWZPA-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000013467 fragmentation Methods 0.000 claims 1
- 238000006062 fragmentation reaction Methods 0.000 claims 1
- 210000004907 gland Anatomy 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 150000002642 lithium compounds Chemical class 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000002737 metalloid compounds Chemical class 0.000 claims 1
- 150000003304 ruthenium compounds Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 10
- 150000002736 metal compounds Chemical class 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000002955 isolation Methods 0.000 description 4
- DZUDZSQDKOESQQ-UHFFFAOYSA-N cobalt hydrogen peroxide Chemical compound [Co].OO DZUDZSQDKOESQQ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910008479 TiSi2 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VJFCXDHFYISGTE-UHFFFAOYSA-N O=[Co](=O)=O Chemical compound O=[Co](=O)=O VJFCXDHFYISGTE-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229930004069 diterpene Natural products 0.000 description 1
- 150000004141 diterpene derivatives Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91112080A TWI299530B (enrdf_load_stackoverflow) | 2002-06-05 | 2002-06-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW91112080A TWI299530B (enrdf_load_stackoverflow) | 2002-06-05 | 2002-06-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI299530B true TWI299530B (enrdf_load_stackoverflow) | 2008-08-01 |
Family
ID=45069713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91112080A TWI299530B (enrdf_load_stackoverflow) | 2002-06-05 | 2002-06-05 |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI299530B (enrdf_load_stackoverflow) |
-
2002
- 2002-06-05 TW TW91112080A patent/TWI299530B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3180779B2 (ja) | 半導体装置の製造方法 | |
| JP3887257B2 (ja) | サリサイド構造の改良された形成方法 | |
| CN101981673B (zh) | 金属栅结构及其制造方法 | |
| JP3039493B2 (ja) | 基板の洗浄方法及び洗浄溶液 | |
| TWI242811B (en) | Cleaning solution and method for selectively removing layers in a silicidation process | |
| JP2008218867A (ja) | 半導体装置の製造方法 | |
| CN101819931B (zh) | 制造半导体装置的方法 | |
| JP4282616B2 (ja) | 半導体装置の製造方法 | |
| JP3415549B2 (ja) | 電子デバイスの洗浄方法及びその製造方法 | |
| TWI316737B (en) | Method for manufacturting gate electrode for use in semiconductor device | |
| US8697573B2 (en) | Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating | |
| JP2004119977A (ja) | タンタル及び窒化タンタルの選択的ドライ・エッチング | |
| JP2003234307A (ja) | エッチング方法、基板洗浄方法及び半導体装置の製造方法 | |
| TWI299530B (enrdf_load_stackoverflow) | ||
| JP3688650B2 (ja) | 電子デバイスの製造方法 | |
| US5930650A (en) | Method of etching silicon materials | |
| JP4917328B2 (ja) | 半導体装置の製造方法 | |
| TWI326465B (en) | Method of cleaning wafer after etching process | |
| JP2007123548A (ja) | 半導体装置の製造方法 | |
| JP2010050117A (ja) | 半導体装置の製造方法 | |
| JP3357782B2 (ja) | 半導体装置の製造方法 | |
| US7595264B2 (en) | Fabrication method of semiconductor device | |
| JP2010238685A (ja) | 半導体装置の製造方法 | |
| TWI228763B (en) | Method of fabricating gate structures having a high-k gate dielectric layer | |
| JP2000294562A (ja) | 半導体装置及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |