TWI297297B - Wire bonding capillary apparatus and method - Google Patents

Wire bonding capillary apparatus and method Download PDF

Info

Publication number
TWI297297B
TWI297297B TW095120645A TW95120645A TWI297297B TW I297297 B TWI297297 B TW I297297B TW 095120645 A TW095120645 A TW 095120645A TW 95120645 A TW95120645 A TW 95120645A TW I297297 B TWI297297 B TW I297297B
Authority
TW
Taiwan
Prior art keywords
welding
wire
cutting
capillary
ultrasonic
Prior art date
Application number
TW095120645A
Other languages
English (en)
Other versions
TW200711780A (en
Inventor
Bernhard P Lange
Steven Alfred Kummerl
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of TW200711780A publication Critical patent/TW200711780A/zh
Application granted granted Critical
Publication of TWI297297B publication Critical patent/TWI297297B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/06Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/106Features related to sonotrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45014Ribbon connectors, e.g. rectangular cross-section
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78317Shape of other portions
    • H01L2224/78318Shape of other portions inside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/207Diameter ranges
    • H01L2924/2076Diameter ranges equal to or larger than 100 microns

Description

1297297 九、發明說明: 【發明所屬之技術領域】 本發明-般關於半導體器件及程序,且更加明確地係關 於裝置及方法’其與一半導體器件之製造有關,用以對一 谭墊(或其類似物)焊接—絲焊,尤其例如—帶狀或 絲焊。 【先前技術】
於半導體產業中’實行絲焊焊接通常係以使 卿例如-半導體晶粒或晶片),對不同的結構(例如一金 屬引線框架)進行電性互連。例如,楔形焊接係一傳統方 法,其用以於該半導體晶粒上之焊接點至其他點⑼如該引 線框架的引線端)間焊接細絲焊(例如細的銘或金絲焊)。傳 :上’為啟始一焊接,該絲焊係憑藉一焊接工具之尖端對 著及1C及/或引線框架而施壓。該烊接工具係予以超音波振 動-數十毫秒的週H中該焊接工具尖端的移動平面一 般係與該焊接即將於其上形成之半導體晶片表面平行。垂 直於該晶片表面之焊接玉具的靜態負載組合會對著與該工 具尖端之振㈣合的絲焊與晶片致使該絲焊產生塑性變 形’因此同時會使該焊接絲焊與組成該晶片或引線框架之 表面之材料的原子結合,且據此會於該絲焊與該晶片或引 線框架間提供一冷谭。 關於絲知桿接之問題係於整個焊接程序中對該絲焊的 处 X及在元成该焊接之後該絲焊的打斷或切斷。欲實 行此等功I,多數傳統細絲嬋楔形焊接I具會藉由钳緊及/ 112032.doc 1297297 或拉4 4焊使其脫離該焊接基板而打斷該絲焊。一般而 言’對直徑小的絲焊(具有直徑小於0.025英时的圓斷面絲 焊)而言,此一拉的動作係足夠的,且不會對該基板導致重 大損壞。然而,隨著對10速度與性能要求前所未有的提升, 已採用較大尺寸絲焊,例如金、,呂、銅金屬或金屬合金帶 狀絲焊,其中該等絲焊(例如,一帶狀絲焊之平坦矩形斷面) 之斷面面積顯然係比先前所使用的圓斷面絲焊大,因此會 為該絲焊提供較大的電流載送功能。據此,當使用該等傳 統=接工具以及該等較粗帶狀絲焊時,欲打斷該帶狀絲焊 所而之拉力易造成該晶片及/或引線框架的嚴重變形。因 此,已為焊接玉具配製出各種組態,例如一種其中一刀片 在從及基板拉離該焊接卫具之前,為使該帶狀絲焊變形或 切割該帶狀絲焊’係對著該晶片及/或引線框架而施壓。 圖1A至1C說明於各種操作期間之一此傳統焊接器件 ’其中-帶狀料15係藉由_超音波焊接工㈣而焊接 至-基板20’例如一引線框架端或半導體晶片。如同圖μ 中所說明’該焊接工具25係對著該帶狀絲叫而施壓,因 ,於該焊接工具與該基板2〇間壓縮該帶狀絲焊。此時,該 :接工具25會以超音波式振動,因此而將該帶狀絲焊。冷 焊至該基板2 0。圖1B說明一斜益―^ 兄月對者该帶狀絲焊15進行施壓的 切割器30,其中該切割器會藉由該切割器所施之力f而有效 地使帶狀絲焊變細或切透該帶狀絲焊。圖⑴說明將該焊接 工具25從該基板2〇拉離’其中一夾子35會進-步從該基板 拉该帶狀絲焊15 ’因此-般便可於該切割器30之尖端40將 112032.doc 1297297 該帶狀絲焊完全切斷。 然而,-伴隨帶狀絲焊之傳統浮接的問題係圖ib中所說 明該切割器30對著該帶狀絲谭15之力卜般會轉成該基板 20上的力,其中該基板便可能因該切割操作而遭永久性變 形及/或損壞。例如,在該帶狀絲焊15係予以焊接至一細引 線框架端的情況中,該力F會使該引線框架端嚴重變形(如 箭頭45所說明),其中該變形會於該切割器從該基板2〇拉離 後仍繼續存在。此外,如果該帶狀絲焊15係未完全地切斷, 則該拉力可在該夾子35將該帶狀絲焊拉離時使該引線框架 端朝與該箭頭45相反的方向進一步變曲。或者,在該帶狀 絲焊15係予以焊接至—晶片的情況中,該切割力f可對該晶 片造成不利影響,例如可能損壞該1(:之金屬化層或其他層。 因此,當前對將帶狀絲焊焊接至基板之可靠程序及裝置 存在著一需要,其中對該基板的損壞實質上係降至最低。 【發明内容】 本發明藉由為使絲焊,尤其是較大尺寸或帶狀絲焊焊接 至各種基板提供改良的裝置及方法而克服先前技術之限 制0 根據本發明之一說明性觀點,該裝置包括一超音波焊接 毛細管,其具有一主體區域以及一焊接區域,其中該主體 區域包括一定義於其内的通道。一絲焊(例如一帶狀絲焊) 痛又係牙過5亥通道並沿者該焊接區域的焊接表面而延伸, 且一鉗緊夾片係於該通道附近可操作耦合至該超音波焊接 毛細官。據此,該鉗緊夾片可操作以於該通道之接合表面 112032.doc 1297297 ”錢緊夾片之㈣表面間選擇性夾住該絲焊。 其 」’、係冑纟可操作麵合至該超音波焊接毛細 二’-般係置放於該焊接表面與該焊接毛細 =選::’該切割工具可操作以相對該超音波焊接毛細 置放二生延伸與收縮’其中該切割工具可至少部份穿透 置放於该超音波焊接毛細 壯 幻坏接表面與接合表面間之帶 广。由於該切割工具之切割動作並無施壓於該工件 焊於:!常固定及/或钳緊之區域間切割該帶狀絲 緊時,對/▼狀絲焊貫f上係相對該焊接毛細管予以钳 透目f該焊接表面與該接合表面間之帶狀絲焊的此一穿 透相對於先前技術而言係非常有利。 二發明之另一說明性觀點,該鉗緊夹片與切割工具 考)而叮:者以上係藉由一或多個驅動器(例如,機電驅動 m4接毛細官。該等機電驅動器可包括 ::馬:、線性馬達、彈菁驅動器、氣動 Γ:或一者以上,其可操作以使個別的鉗緊夹片= :]工:目對該超音波焊接毛細管而選擇性延伸與收縮二 細管而延伸該切割工具的彈相對該超音波焊接毛 使該切割工具收縮,或反W時—磁或電磁驅動器則 根據另一範例’該切割工具包括—伸長部件, 一 通常定義於其尾端的切割刀片。該切h具可進—步 :環=割器’其具有一定義於該伸長部件尾 = 域,其中該帶狀絲焊通常會通過該環之内部區域,且其; 112032.doc 1297297 A 刀片通常係由環繞該環之内徑的切宝J f面而+ H 该環狀切割器隨後係可摔作以其…表面而疋義。 細管之… 基於该切割器環朝該焊接毛 ㈣用而選擇性穿透或切斷該帶狀 【貫施方式】 (例如11係加以導向"'用以使—絲焊焊接至—基板或工件 ,—積體電路(Ic)及/或引線框架裝配件)之裝置及方 焊二加明確地’本發明提供一用以使一矩形斷面帶狀絲 傳該基板之強健且可靠的器件及程序,其中可見於 〃、、于t置及程序之對該基板的損壞或變形作用實質上 係予以減輕。據此,現將參相圖說明本發明,其中相似 参考號碼係用來表示相似元件。 圖2係-示範性焊接器件⑽的斷面圖,其根據本發明之 占。該焊接器件H)〇包括一用以使一帶狀絲焊1〇4超音波 知接至一基板或工件1〇6(例如,一 IC晶片或一引線框架)之 超音波焊接毛細管1G2。例如,該超音波焊接毛細管1〇2係 可操作耦合至一超音波震盪器(未顯示),以如同本技術中所 f知對該焊接毛細管提供超音波振動。該超音波焊接毛細 官102包括一主體區域108以及一焊接區域11〇,其中該超音 波焊接毛細管係可操作以使該帶狀絲焊104夾於該超音波 知接毛細管之焊接表面112與該工件106之表面114間。例 如,該焊接毛細管102之主體區域108包括定義於其内的通 道Π6,其中該帶狀絲焊104通常會穿過該通道並沿著關於 該焊接區域no之焊接表面114而進一步延伸。該通道116可 包括一穿透孔、一通道或其他不同表面(未顯示),其定義於 112032.doc 1297297 該主體區域108内或沿著該主體區域108,其中該帶狀絲焊 1 〇4係可操作以沿著該通道而延伸。於一範例中,該帶狀絲 焊104就其斷面而言通常係矩形,其中該通道就斷面而言通 常亦係矩形。 圖2進一步說明一對該焊接毛細管1〇2可操作耦合於其主 體區域108之鉗緊夾片118,其中該鉗緊夾片進一步係與該 通道116有關。該鉗緊夾片118係可操作以於該焊接毛細管 102之通道116的接合表面12〇與該鉗緊夾片ιΐ8之鉗緊表面 122間選擇性夾住該帶狀絲焊1〇4。於本範例中,通道lb之 接合表面12〇通常係平面的,其中該通道通常錢義於該焊 接毛細管102之主體區域108與該钳緊夾片118之鉗緊表面 122間。或者,該通道116可以-通道(未顯示)或其他與該谭 接毛細管H)2之主體區域1G8有關的結構而加以定義, 该鉗緊夾片11 8係可操作以實質 貝上於忒通道内夾住該帶妝 4焊104或避免該帶狀絲焊1〇4移動。 本發明之鉗緊夾片118可择 一 你作輕合至一機電驅動器(夫顧 示),其中該機電驅動5! #可ρ (禾頌 或延伸,因此而分別夾住 月收縮及/ 〗… 及或釋放該帶狀絲焊1〇4。例如, 4鉗緊夾片118可操作耦合 E 土 主馬達(未顯示),例如一朽服 馬達,其中該馬達係可婭从 j如伺服 ^ 7 ’、知作以使該鉗緊夾片相對該接人矣 面120而選擇性延伸與收縮 接口表 至_ 4W @〜主 鉗緊夾片118可進一步耦合 步操作以實質上使該”丈-或多個彈簧係可進-或收縮。或者,該相對該接合表面而延伸 緊川18可_合至-氣動或液壓 112032.doc 1297297 驅動器(未顯示),其中該氣動或液壓驅動器係可操作以使該 鉗緊夾片相對該接合表面12 0而延伸與收縮。據此,任何可 操作以使該钳緊夾片i丨8相對該焊接毛細管i 之接合表面 120而延伸及/或收縮的驅動器均視為含括於本發明之範疇 内。應注意的是該鉗緊夾片通常係與該焊接毛細管1〇2整合 在起,其中該焊接毛細管102之接合表面12〇通常係靠近 該焊接表面114,如同以下將加以討論的。 根據本發明之另一說明性觀點,該烊接器件100進一步包 括-切割工具124,其中該切割工具係進一步可操作耦合至 該焊接毛綸管102。例如,該切割工具124通常係予以置放 於該焊接表面m與該焊接毛細管1()2之接合表面12〇間,其 中該切割卫具係可操作以相對料接毛細管而選擇性延伸 與收縮。例如,該切割工具124包括一伸長部件126,其中 -切割刀片128通常係定義於其尾端13〇。例如,該切割刀 片128可為平坦化的(如圖2中所說明),或替代性地可於該切 割工具之尾端13〇聚合成一點(未顯示)。根據本發明,該切 割工具124係可操作以在該㈣刀片128係以—如剪裁的方 式延伸通過該鉗緊夾片118之鉗緊表面122時,至少部份穿 透於該焊接表面114與該超音波焊接毛細fiG2之接合表面 120間的帶狀絲焊1 〇4。 於另—範例中,該切割工具124包括—環狀切割器132, 如同圖3中所說明。例如,該環狀切割器132包括一環⑴, 其位於圖2之切割工具124的尾端13〇,丨中該帶狀絲焊⑽ 通常會通過該環之内部區域136。圖3之環狀切割器132係可 112032.doc 1297297 二乍而以肖圖2之切割刀片i 2 8相同的方式選擇性延伸與 欠縮,、、、而’ 4 %狀切割器之切割表面138係可操作以通常 =其係朝該焊接毛細管1G2之主體區域⑽而收縮時通過該 帶狀絲焊。據此’圖3之環狀切割器係可操作以對著該焊接 毛細管之接合表面120而拖拉’因此會至少部份地穿透該帶 狀絲焊104。 。根據本發明之另一說明性觀,點,圖2之切割工具124係可 操作麵合至-切割驅動器(未顯示),例如機電驅動器、伺服 馬達、或其他驅動器,例如該等參考該崎夾片ιΐ8所說明 者該切割工具124可搞合至一磁驅動器(未顯示)以 及一彈簧(未顯示),其中該磁驅動器係可操 具收縮⑽如,將㈣^具之尾端⑼拉向該焊接毛;;管 1〇2θ之主體區域且其中該彈簧係可操作㈣該切割工 具提供-恢復力’因此而使該㈣卫具之尾端延伸或恢復 至其初始位置。 圖4以及5八至汀說明根據本發明一項實施方案,一用以 =接-帶狀絲焊至-基板之方法的步驟,其應用至該示 範性焊接裝置。應瞭解所說明之事件順序為符合特殊需求 可有特定的變異。方法2〇〇起始於動作2〇5,其中一帶狀絲 丈干係穿過一焊接毛細管予以饋送。如同圖5A中所說明,該 T狀絲焊1 0 4係通常在延伸該鉗緊夾片丨丨8時穿過該焊接毛 、、、田吕1 02之通道11 6予以饋送,因此通常會讓該帶狀絲焊穿 過该通道而前進。於圖4之動作21〇中,該帶狀絲焊係對著 該焊接毛細管而钳緊,且動作2丨〇之結果係於圖5 b中予以說 112032.doc 1297297 明。例如,該鉗緊夾片118通常會將該帶狀絲焊104夾在該 甜緊夾片之鉗緊表面122與該焊接毛細管102之接合表面 120 間。 於圖4之動作215中,該帶狀絲焊係予以焊接至該工件, 例如將圖5B之帶狀絲焊1 〇4藉由該焊接毛細管1 〇2之超音波 振動而冷焊至該工件丨〇6。於一範例中,通常一旦該帶狀絲 焊104係予以焊接至該工件1〇6,於圖4之動作22〇中該帶狀 絲焊便能藉切割工具丨24而切割。圖5C至5D說明從該焊接 毛細管102之主體區域log延伸的切割工具124,其中於圖5D 中’该切割.工具124會完全地切斷該帶狀絲焊丨〇4。應注意 的是圖3之環狀切割器132可替代性地加以運用,其中該環 狀切割器係朝該焊接毛細管加以收縮,以切割圖5A至5卩之 帶狀絲焊104。一旦該切割工具丨24至少部份穿透該帶狀絲 丈干1 〇4(如圖5D中所說明的切斷該帶狀絲焊),則該焊接工具 便可從忒工件1〇6予以抬升,如圖5E中所說明,因此提 供該帶狀絲焊對該工件之安全焊接丨4 〇,而不會對該工件造 成知壞、相或除此之外的嚴重影響,如同圖巾所說明。 因此本發明提供用以將絲焊(例如帶狀絲焊)焊接至一 工件之裝置及方法,其中對該絲烊之切割或切斷係以著不 會使該工件嚴重變形的方式予以實行。藉由提供實質上與 δ亥:fcf*接毛細管整合為 .AA J-T7 登口在起的切割工具與鉗緊夾片,便不需 要額外對該帶狀絲焊或工件鉗腎 午鉗緊或夾住,且可實行對該帶 曰^的焊接與切割而不會f曲引線框架端或損壞該等冗 之表面此外,本發明提供一可於焊接位置間輕易旋 112032.doc -13- 1297297 轉的焊接器件,因此於該等焊接位置間對一帶狀絲焊提供 一有效且可靠的焊接。 與本發明相關之熟習本技術人士將明瞭,可對所說明之 該等範例做出各種增加、刪除、替換以及其他 、 & ^又,而仍 不脫離本發明申請專利範圍之範齊。 【圖式簡單說明】 圖1A至1C(先前技術)說明於一焊接程序期, y 4,處於不同 位置的一傳統絲焊焊接裝置。
圖2係根據本發明一觀點之一示範性焊接 衣直的斷面圖0 圖3說明根據本發明另一說明性觀點 — 平面圖。 J 衣狀切割器的 半導體器件 處於不同位 圖4係根據本發明一用以使一絲焊焊接至 之示範性方法的流程圖。 圖5A至5F係根據本發明於一焊接程序期間 置之一示範性焊接裝置的斷面圖。 【主要元件符號說明】 10 傳統焊接器件 15 帶狀絲焊 20 基板 25 焊接工具 30 切割器 35 夾子 40 尖端 45 箭頭 112032.doc •14- 1297297
100 焊接器件 102 超音波焊接毛細管 104 帶狀絲焊 106 工件 108 主體區域 110 焊接區域 112 焊接表面 114 焊接表面 116 通道 118 •鉗緊夾片 120 接合表面 122 钳緊表面 124 切割工具 126 伸長部件 128 切割刀片 130 尾端 132 環狀切割器 134 環 136 内部區域 138 切割表面 140 安全焊接 112032.doc -15-

Claims (1)

1297297 十、申請專利範圍: 1 · 一種用以焊接一絲焊之裝置,其包括: 一超音波焊接毛細管,其具有一主體區域以及一焊接 區域,其中該主體區域具有一定義於其内之通道,且係 經調適以#收通f會穿過該通道並沿著關力該焊接區域 4 之一焊接表面而延伸的絲焊; , —射緊夾#,其可操作耗合至該s音波焊接毛細管並 與該通道相關’其中該崎U係可操作以將該絲焊選 • 擇性夾住於該通道之一接合表面與該钳緊夾片之-钳緊 表面間;.以及 切割工具’其可操作耦合至該超音波焊接毛細管且 通常係置放於該焊接表面與該接合表面間,其中該㈣ 工具係可操作以相對該超音波焊接毛細管而選擇性延伸 =二,料内至少部份穿透於該焊接表面與該超音波 知接毛細官之接合表面間的絲焊。
• 之:广其加以調適、配置以及尺寸調整則 == 常為矩形斷面的一平坦絲烊,且其中_ k吊為矩形的斷面,以接收該帶狀练垾 I =?置,其中該_片係可操作轉合Η 毛:广其可操作以使該鉗緊夾片相 毛細官而選擇性延伸與收縮。 波知接 4·如印求項1、2或3之裝 112032.doc 1297297 5. 如請求項4之裝置,其根據請求項^ , Λ, I,. 、 其中該钳緊驅動5| 包括-词服馬達,其可操作輕動益 由兮+… 王通鉗緊夾片;以及苴 中Μ切剎驅動器包括對其耦合之 … 服馬達係可择作以梯兮“, q服馬達’其中該伺 手了刼作以使该切割刀片選擇 6. 如請求項4之裝置,其 申爲 #^,χ#,,+ J驅動咨包括一彈簧,其可 知作以使㈣割工具相對該 收縮。 收坏接毛細官而延伸或 7·如請求項1、2或3之裝置,苴中 件,苴且古# p 4 ^ °彳工具包括一伸長部 域定義…!猎尺寸調整以供使該絲谭通過其之-内部區 8. =之ΓΓ端切割刀片,其通常由環繞 該衣之一内徑的一切割表面而定義。 一種用以焊接一絲烊至一 扣、 1干的方法,該方法包括·· =k s曰波知接毛細管之一通道饋送該絲焊丨 對著該超音波焊接毛細管 焊; 接曰表面而鉗緊該絲 沿著該超音波焊接毛細管 <坪接表面而將該絲焊焊接 至该工件;以及 於該烊接表面與該超音波焊 割該絲焊。 仏接毛細官之接合表面間切 9.如請求項8之方法,苴中兮鉍 八T 4、,,糸知係一平坦絲焊,其通 有一矩形斷面。 八 1〇·如請求項8之方法,其中切割該絲焊包括使一切割刀片至 少部份通過於該焊接表面與該超音波焊接毛細管之接合 表面間的絲谭。 口 112032.doc 1297297 U·如請求W、9或狀方法,其進 割器而饋误兮絲.卢,苴由# 牙過〜環狀切 割器之内徑予以定義,且立“ 吊竹由垓環狀切 波焊接毛,切割該絲详包括朝該超音 坪接毛細管收縮該切割刀片。 12.如請求項8、9或1〇方 , 八中切割該絲烊包括使一切 L伸而遂離$接合表面與該焊接表面間的超音波 丈于接毛細管。 112032.doc
TW095120645A 2005-06-09 2006-06-09 Wire bonding capillary apparatus and method TWI297297B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/148,687 US7216794B2 (en) 2005-06-09 2005-06-09 Bond capillary design for ribbon wire bonding

Publications (2)

Publication Number Publication Date
TW200711780A TW200711780A (en) 2007-04-01
TWI297297B true TWI297297B (en) 2008-06-01

Family

ID=37523246

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095120645A TWI297297B (en) 2005-06-09 2006-06-09 Wire bonding capillary apparatus and method

Country Status (7)

Country Link
US (2) US7216794B2 (zh)
EP (1) EP1904264B1 (zh)
JP (1) JP2008543115A (zh)
KR (1) KR20080015925A (zh)
CN (1) CN101171098A (zh)
TW (1) TWI297297B (zh)
WO (1) WO2006135773A1 (zh)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101313391B1 (ko) 2004-11-03 2013-10-01 테세라, 인코포레이티드 적층형 패키징
US8058101B2 (en) 2005-12-23 2011-11-15 Tessera, Inc. Microelectronic packages and methods therefor
US7740176B2 (en) * 2006-06-09 2010-06-22 Hand Held Products, Inc. Indicia reading apparatus having reduced trigger-to-read time
US7537149B2 (en) * 2006-09-26 2009-05-26 Orthodyne Electronics Corporation Deep access large ribbon bond head
US20080197461A1 (en) * 2007-02-15 2008-08-21 Taiwan Semiconductor Manufacturing Co.,Ltd. Apparatus for wire bonding and integrated circuit chip package
US7800207B2 (en) * 2007-10-17 2010-09-21 Fairchild Semiconductor Corporation Method for connecting a die attach pad to a lead frame and product thereof
US7597235B2 (en) * 2007-11-15 2009-10-06 Infineon Technologies Ag Apparatus and method for producing a bonding connection
JP2010074499A (ja) * 2008-09-18 2010-04-02 Panasonic Electric Works Co Ltd リレー装置
US7762449B2 (en) * 2008-11-21 2010-07-27 Asm Assembly Automation Ltd Bond head for heavy wire bonder
US8141765B2 (en) * 2009-01-20 2012-03-27 Orthodyne Electronics Corporation Cutting blade for a wire bonding system
US8129220B2 (en) 2009-08-24 2012-03-06 Hong Kong Polytechnic University Method and system for bonding electrical devices using an electrically conductive adhesive
JP4791571B2 (ja) * 2009-11-26 2011-10-12 田中電子工業株式会社 超音波ボンディング用アルミニウムリボン
US9159708B2 (en) 2010-07-19 2015-10-13 Tessera, Inc. Stackable molded microelectronic packages with area array unit connectors
US8482111B2 (en) 2010-07-19 2013-07-09 Tessera, Inc. Stackable molded microelectronic packages
WO2012012335A2 (en) * 2010-07-19 2012-01-26 Orthodyne Electronics Corporation Ultrasonic bonding systems including workholder and ribbon feeding system
US20120032354A1 (en) * 2010-08-06 2012-02-09 National Semiconductor Corporation Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds
US7918378B1 (en) 2010-08-06 2011-04-05 National Semiconductor Corporation Wire bonding deflector for a wire bonder
US8231044B2 (en) 2010-10-01 2012-07-31 Orthodyne Electronics Corporation Solar substrate ribbon bonding system
US8196798B2 (en) 2010-10-08 2012-06-12 Kulicke And Soffa Industries, Inc. Solar substrate ribbon bonding system
KR101075241B1 (ko) 2010-11-15 2011-11-01 테세라, 인코포레이티드 유전체 부재에 단자를 구비하는 마이크로전자 패키지
US20120146206A1 (en) 2010-12-13 2012-06-14 Tessera Research Llc Pin attachment
US8618659B2 (en) 2011-05-03 2013-12-31 Tessera, Inc. Package-on-package assembly with wire bonds to encapsulation surface
KR101128063B1 (ko) 2011-05-03 2012-04-23 테세라, 인코포레이티드 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리
US8836136B2 (en) 2011-10-17 2014-09-16 Invensas Corporation Package-on-package assembly with wire bond vias
US8946757B2 (en) 2012-02-17 2015-02-03 Invensas Corporation Heat spreading substrate with embedded interconnects
US9349706B2 (en) 2012-02-24 2016-05-24 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8372741B1 (en) 2012-02-24 2013-02-12 Invensas Corporation Method for package-on-package assembly with wire bonds to encapsulation surface
US8835228B2 (en) 2012-05-22 2014-09-16 Invensas Corporation Substrate-less stackable package with wire-bond interconnect
US9391008B2 (en) 2012-07-31 2016-07-12 Invensas Corporation Reconstituted wafer-level package DRAM
US9502390B2 (en) 2012-08-03 2016-11-22 Invensas Corporation BVA interposer
US8540136B1 (en) * 2012-09-06 2013-09-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for stud bump formation and apparatus for performing the same
US8975738B2 (en) 2012-11-12 2015-03-10 Invensas Corporation Structure for microelectronic packaging with terminals on dielectric mass
US8878353B2 (en) 2012-12-20 2014-11-04 Invensas Corporation Structure for microelectronic packaging with bond elements to encapsulation surface
US9136254B2 (en) 2013-02-01 2015-09-15 Invensas Corporation Microelectronic package having wire bond vias and stiffening layer
US8883563B1 (en) 2013-07-15 2014-11-11 Invensas Corporation Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation
US9023691B2 (en) 2013-07-15 2015-05-05 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US9034696B2 (en) 2013-07-15 2015-05-19 Invensas Corporation Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation
JP2015026772A (ja) * 2013-07-29 2015-02-05 三菱電機エンジニアリング株式会社 接続導体の接合断裁装置及び接合断裁制御方法
US9167710B2 (en) 2013-08-07 2015-10-20 Invensas Corporation Embedded packaging with preformed vias
US9685365B2 (en) 2013-08-08 2017-06-20 Invensas Corporation Method of forming a wire bond having a free end
US20150076714A1 (en) 2013-09-16 2015-03-19 Invensas Corporation Microelectronic element with bond elements to encapsulation surface
US9087815B2 (en) 2013-11-12 2015-07-21 Invensas Corporation Off substrate kinking of bond wire
US9082753B2 (en) 2013-11-12 2015-07-14 Invensas Corporation Severing bond wire by kinking and twisting
US9379074B2 (en) 2013-11-22 2016-06-28 Invensas Corporation Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects
US9263394B2 (en) 2013-11-22 2016-02-16 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583456B2 (en) 2013-11-22 2017-02-28 Invensas Corporation Multiple bond via arrays of different wire heights on a same substrate
US9583411B2 (en) 2014-01-17 2017-02-28 Invensas Corporation Fine pitch BVA using reconstituted wafer with area array accessible for testing
US9214454B2 (en) 2014-03-31 2015-12-15 Invensas Corporation Batch process fabrication of package-on-package microelectronic assemblies
US10381326B2 (en) 2014-05-28 2019-08-13 Invensas Corporation Structure and method for integrated circuits packaging with increased density
US9646917B2 (en) 2014-05-29 2017-05-09 Invensas Corporation Low CTE component with wire bond interconnects
US9412714B2 (en) 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
DE102014013452B4 (de) * 2014-09-17 2016-05-19 Schunk Sonosystems Gmbh Vorrichtung zum Verschweißen von stabförmigen Leitern
USD771168S1 (en) 2014-10-31 2016-11-08 Coorstek, Inc. Wire bonding ceramic capillary
JP2016100571A (ja) * 2014-11-26 2016-05-30 三菱電機エンジニアリング株式会社 接続導体の接合断裁装置及び接合断裁制御方法
US9735084B2 (en) 2014-12-11 2017-08-15 Invensas Corporation Bond via array for thermal conductivity
USD797172S1 (en) 2015-02-03 2017-09-12 Coorstek, Inc. Ceramic bonding tool with textured tip
USD797826S1 (en) 2015-02-03 2017-09-19 Coorstek, Inc. Ceramic bonding tool with textured tip
USD797171S1 (en) 2015-02-03 2017-09-12 Coorstek, Inc. Ceramic bonding tool with textured tip
US9888579B2 (en) 2015-03-05 2018-02-06 Invensas Corporation Pressing of wire bond wire tips to provide bent-over tips
USD753739S1 (en) 2015-04-17 2016-04-12 Coorstek, Inc. Wire bonding wedge tool
US9530749B2 (en) 2015-04-28 2016-12-27 Invensas Corporation Coupling of side surface contacts to a circuit platform
US9502372B1 (en) 2015-04-30 2016-11-22 Invensas Corporation Wafer-level packaging using wire bond wires in place of a redistribution layer
US9761554B2 (en) 2015-05-07 2017-09-12 Invensas Corporation Ball bonding metal wire bond wires to metal pads
US9490222B1 (en) 2015-10-12 2016-11-08 Invensas Corporation Wire bond wires for interference shielding
US10490528B2 (en) 2015-10-12 2019-11-26 Invensas Corporation Embedded wire bond wires
US10332854B2 (en) 2015-10-23 2019-06-25 Invensas Corporation Anchoring structure of fine pitch bva
US10181457B2 (en) 2015-10-26 2019-01-15 Invensas Corporation Microelectronic package for wafer-level chip scale packaging with fan-out
DE102015222011A1 (de) * 2015-11-09 2017-05-11 Schunk Sonosystems Gmbh Verfahren zum Schneiden von Schneidgut
US9911718B2 (en) 2015-11-17 2018-03-06 Invensas Corporation ‘RDL-First’ packaged microelectronic device for a package-on-package device
US9659848B1 (en) 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US9984992B2 (en) 2015-12-30 2018-05-29 Invensas Corporation Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces
US9935075B2 (en) 2016-07-29 2018-04-03 Invensas Corporation Wire bonding method and apparatus for electromagnetic interference shielding
USD868123S1 (en) 2016-12-20 2019-11-26 Coorstek, Inc. Wire bonding wedge tool
US10299368B2 (en) 2016-12-21 2019-05-21 Invensas Corporation Surface integrated waveguides and circuit structures therefor
DE102018221950A1 (de) 2018-12-17 2020-06-18 BINDER tecsys GmbH Verfahren zur Herstellung und Positionierung elektrischer Verbinder
DE102019126644A1 (de) * 2019-10-02 2021-04-08 F&S Bondtec Semiconductor GmbH Bondkopf, Drahtbonder mit einem solchen und Verfahren unter Nutzung eines solchen
US20210111146A1 (en) * 2019-10-10 2021-04-15 Skyworks Solutions, Inc. Cupd wire bond capillary design

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648354A (en) * 1969-11-17 1972-03-14 Gen Motors Corp Tailless bonder for filamentary wire leads
US3689983A (en) * 1970-05-11 1972-09-12 Gen Motors Corp Method of bonding
DE3343738C2 (de) * 1983-12-02 1985-09-26 Deubzer-Eltec GmbH, 8000 München Verfahren und Vorrichtung zum Bonden eines dünnen, elektrisch leitenden Drahtes an elektrische Kontaktflächen von elektrischen oder elektronischen Bauteilen
GB2177639B (en) * 1985-07-08 1988-12-29 Philips Electronic Associated Ultrasonic wire bonder and method of manufacturing a semiconductor device therewith
US4645118A (en) * 1985-08-29 1987-02-24 Biggs Kenneth L Method and means for threading wire bonding machines
US4771930A (en) * 1986-06-30 1988-09-20 Kulicke And Soffa Industries Inc. Apparatus for supplying uniform tail lengths
DE3912580C2 (de) * 1989-04-17 1997-08-21 F&K Delvotec Bondtechnik Gmbh Bondstempel
US4976392A (en) 1989-08-11 1990-12-11 Orthodyne Electronics Corporation Ultrasonic wire bonder wire formation and cutter system
US5148959A (en) 1991-02-07 1992-09-22 Tribotech Wedge bonding tool
US5616520A (en) 1992-03-30 1997-04-01 Hitachi, Ltd. Semiconductor integrated circuit device and fabrication method thereof
JPH06252531A (ja) * 1992-07-31 1994-09-09 Fujitsu Ltd ワイヤ配線方法及び装置
US5365657A (en) * 1993-02-01 1994-11-22 Advanced Interconnection Technology Method and apparatus for cutting wire
US5364004A (en) * 1993-05-10 1994-11-15 Hughes Aircraft Company Wedge bump bonding apparatus and method
US5452838A (en) 1993-07-13 1995-09-26 F & K Delvotec Bondtechnik Gmbh Bonding head for an ultrasonic bonding machine
JP2783125B2 (ja) * 1993-07-23 1998-08-06 株式会社デンソー ワイヤボンディング方法
AU7650294A (en) * 1993-09-24 1995-04-10 University Of British Columbia, The Aminocyclohexylesters and uses thereof
US5445306A (en) 1994-05-31 1995-08-29 Motorola, Inc. Wedge wire bonding tool tip
US5868300A (en) 1995-06-29 1999-02-09 Orthodyne Electronics Corporation Articulated wire bonder
US5890644A (en) 1996-01-26 1999-04-06 Micron Technology, Inc. Apparatus and method of clamping semiconductor devices using sliding finger supports
US5647528A (en) 1996-02-06 1997-07-15 Micron Technology, Inc. Bondhead lead clamp apparatus and method
US5894981A (en) * 1996-11-27 1999-04-20 Orthodyne Electronics Corporation Integrated pull tester with an ultrasonic wire bonder
US5906706A (en) 1997-06-12 1999-05-25 F & K Delvotec Bondtechnik Gmbh Wire guide for a bonding machine
US6155474A (en) 1997-12-16 2000-12-05 Texas Instruments Incorporated Fine pitch bonding technique
JPH11330134A (ja) * 1998-05-12 1999-11-30 Hitachi Ltd ワイヤボンディング方法およびその装置並びに半導体装置
US6158647A (en) 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary
JP3403661B2 (ja) 1999-02-16 2003-05-06 宮城沖電気株式会社 ワイヤボンダ
US6276588B1 (en) * 1999-04-20 2001-08-21 International Rectifier Corp. Insert-type cutting blade for ultrasonic bonding wire termination
US6439448B1 (en) 1999-11-05 2002-08-27 Orthodyne Electronics Corporation Large wire bonder head
EP1139413B1 (en) 2000-03-24 2005-03-16 Texas Instruments Incorporated Wire bonding process
JP2002064118A (ja) 2000-08-22 2002-02-28 Shinkawa Ltd ワイヤボンディング装置
JP2003163234A (ja) 2001-11-27 2003-06-06 Nec Electronics Corp ワイヤボンディング装置およびワイヤボンディング方法
US6667625B1 (en) * 2001-12-31 2003-12-23 Charles F. Miller Method and apparatus for detecting wire in an ultrasonic bonding tool
DE50211351D1 (de) * 2002-04-12 2008-01-24 F & K Delvotek Bondtechnik Bonddraht-Schneidvorrichtung
KR20050084355A (ko) * 2002-12-18 2005-08-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 와이어본딩 방법 및 장치
JP2004221257A (ja) * 2003-01-14 2004-08-05 Seiko Epson Corp ワイヤボンディング方法及びワイヤボンディング装置
US7407079B2 (en) * 2003-10-23 2008-08-05 Orthodyne Electronics Corporation Automated filament attachment system for vacuum fluorescent display
WO2005043266A2 (en) * 2003-10-31 2005-05-12 Massachusetts Institute Of Technology Variable reluctance fast positioning system and methods

Also Published As

Publication number Publication date
US7216794B2 (en) 2007-05-15
EP1904264B1 (en) 2011-08-10
CN101171098A (zh) 2008-04-30
US20070181652A1 (en) 2007-08-09
EP1904264A1 (en) 2008-04-02
WO2006135773A1 (en) 2006-12-21
US7578422B2 (en) 2009-08-25
US20060278682A1 (en) 2006-12-14
TW200711780A (en) 2007-04-01
JP2008543115A (ja) 2008-11-27
KR20080015925A (ko) 2008-02-20
EP1904264A4 (en) 2009-05-13

Similar Documents

Publication Publication Date Title
TWI297297B (en) Wire bonding capillary apparatus and method
JP5899907B2 (ja) ワイヤボンディング用のウェッジツール、ボンディング装置、ワイヤボンディング方法、および半導体装置の製造方法
US5673845A (en) Lead penetrating clamping system
WO2011114710A1 (ja) 超音波溶接方法及び溶接部
TWI557821B (zh) 半導體裝置的製造方法以及打線裝置
JPH04310379A (ja) ケーブル結束具の装着工具
JP4526957B2 (ja) 半導体装置、ボンディング方法およびボンディングリボン
US7565995B2 (en) Roller wire brake for wire bonding machine
TWI585927B (zh) 半導體裝置的製造方法、半導體裝置以及打線裝置
TWI543284B (zh) 半導體裝置的製造方法以及打線裝置
TW200830419A (en) Method and contact structure
KR20210048530A (ko) 메탈막 부착 기판의 분단 방법
JP7161252B2 (ja) 半導体装置、半導体装置の製造方法及びワイヤボンディング装置
JP4609169B2 (ja) 超音波接合方法
JP2003311355A (ja) 金属ワイヤーの製造法
JP3780962B2 (ja) ワイヤボンディング方法
JP2020175432A (ja) 超音波接合方法
JPWO2019082736A1 (ja) メタル膜付き基板の分断方法
JP7431521B2 (ja) 半導体装置の製造方法
JP2005254323A (ja) 超音波接合用チップ及び接合方法
US1004309A (en) Wire-splicing tool.
JPS6081835A (ja) 自動ボンデイングワイヤ−通し機構
JPH10261645A (ja) 半導体素子、突起電極の形成方法およびワイヤボンディング方法
CN110504233A (zh) 包括金属硅化物层的半导体器件及其制造方法
Kumar et al. Thermosonic ball bonding behavior and reliability study of Ag alloy wire