TWI296657B - - Google Patents
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- Publication number
- TWI296657B TWI296657B TW95100030A TW95100030A TWI296657B TW I296657 B TWI296657 B TW I296657B TW 95100030 A TW95100030 A TW 95100030A TW 95100030 A TW95100030 A TW 95100030A TW I296657 B TWI296657 B TW I296657B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- barrier
- barrier layer
- target
- film thickness
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005039979 | 2005-02-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200637928A TW200637928A (en) | 2006-11-01 |
TWI296657B true TWI296657B (fr) | 2008-05-11 |
Family
ID=36916284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095100030A TW200637928A (en) | 2005-02-17 | 2006-01-02 | Barrier film for flexible copper substrate and sputtering target for barrier film formation |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4485570B2 (fr) |
TW (1) | TW200637928A (fr) |
WO (1) | WO2006087873A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101904228B (zh) * | 2007-12-21 | 2014-01-01 | Jx日矿日石金属株式会社 | 印刷配线板用铜箔 |
JP2010133001A (ja) * | 2008-12-08 | 2010-06-17 | Hitachi Metals Ltd | Ni合金ターゲット材の製造方法 |
JP5373453B2 (ja) * | 2009-03-31 | 2013-12-18 | Jx日鉱日石金属株式会社 | プリント配線板用銅箔 |
WO2011001551A1 (fr) * | 2009-06-30 | 2011-01-06 | Jx日鉱日石金属株式会社 | Feuille de cuivre pour cartes de circuits imprimés |
JP2013219150A (ja) * | 2012-04-06 | 2013-10-24 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置のオーミック電極の製造方法 |
CN106536783A (zh) * | 2014-08-07 | 2017-03-22 | 3M创新有限公司 | 反射片及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299820A (ja) * | 1992-04-22 | 1993-11-12 | Toyo Metaraijingu Kk | フレキシブルプリント配線板 |
JPH09260812A (ja) * | 1996-03-18 | 1997-10-03 | Toyo Metallizing Co Ltd | 無線型icカード用プリント回路基板 |
US6171714B1 (en) * | 1996-04-18 | 2001-01-09 | Gould Electronics Inc. | Adhesiveless flexible laminate and process for making adhesiveless flexible laminate |
JP3731841B2 (ja) * | 1997-06-17 | 2006-01-05 | 東レエンジニアリング株式会社 | 二層フレキシブル回路基材の製造方法 |
JP4593808B2 (ja) * | 2001-02-22 | 2010-12-08 | 京セラ株式会社 | 多層配線基板 |
JP4385298B2 (ja) * | 2004-09-01 | 2009-12-16 | 住友金属鉱山株式会社 | 2層フレキシブル基板及びその製造方法 |
-
2005
- 2005-12-27 WO PCT/JP2005/023866 patent/WO2006087873A1/fr not_active Application Discontinuation
- 2005-12-27 JP JP2007503590A patent/JP4485570B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-02 TW TW095100030A patent/TW200637928A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW200637928A (en) | 2006-11-01 |
JP4485570B2 (ja) | 2010-06-23 |
JPWO2006087873A1 (ja) | 2008-07-03 |
WO2006087873A1 (fr) | 2006-08-24 |
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