JP4485570B2 - フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット - Google Patents
フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット Download PDFInfo
- Publication number
- JP4485570B2 JP4485570B2 JP2007503590A JP2007503590A JP4485570B2 JP 4485570 B2 JP4485570 B2 JP 4485570B2 JP 2007503590 A JP2007503590 A JP 2007503590A JP 2007503590 A JP2007503590 A JP 2007503590A JP 4485570 B2 JP4485570 B2 JP 4485570B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- target
- barrier
- thickness
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004888 barrier function Effects 0.000 title claims description 119
- 239000010949 copper Substances 0.000 title claims description 57
- 229910052802 copper Inorganic materials 0.000 title claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 title claims description 16
- 238000005477 sputtering target Methods 0.000 title claims description 8
- 230000015572 biosynthetic process Effects 0.000 title claims description 5
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 239000000956 alloy Substances 0.000 claims description 21
- 230000035699 permeability Effects 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010408 film Substances 0.000 description 113
- 239000010410 layer Substances 0.000 description 85
- 230000000052 comparative effect Effects 0.000 description 34
- 238000012360 testing method Methods 0.000 description 28
- 239000000203 mixture Substances 0.000 description 26
- 229920001721 polyimide Polymers 0.000 description 22
- 239000004642 Polyimide Substances 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 16
- 229910001069 Ti alloy Inorganic materials 0.000 description 10
- 239000000654 additive Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920006259 thermoplastic polyimide Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005039979 | 2005-02-17 | ||
| JP2005039979 | 2005-02-17 | ||
| PCT/JP2005/023866 WO2006087873A1 (fr) | 2005-02-17 | 2005-12-27 | Film isolant pour substrat de cuivre flexible et cible de pulverisation pour formation de film isolant |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2006087873A1 JPWO2006087873A1 (ja) | 2008-07-03 |
| JP4485570B2 true JP4485570B2 (ja) | 2010-06-23 |
Family
ID=36916284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007503590A Expired - Fee Related JP4485570B2 (ja) | 2005-02-17 | 2005-12-27 | フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4485570B2 (fr) |
| TW (1) | TW200637928A (fr) |
| WO (1) | WO2006087873A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4961023B2 (ja) * | 2007-12-21 | 2012-06-27 | Ｊｘ日鉱日石金属株式会社 | プリント配線板用銅箔 |
| JP2010133001A (ja) * | 2008-12-08 | 2010-06-17 | Hitachi Metals Ltd | Ｎｉ合金ターゲット材の製造方法 |
| JP5373453B2 (ja) * | 2009-03-31 | 2013-12-18 | Ｊｘ日鉱日石金属株式会社 | プリント配線板用銅箔 |
| KR101086656B1 (ko) * | 2009-06-30 | 2011-11-24 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 프린트 배선판용 동박 |
| JP2013219150A (ja) * | 2012-04-06 | 2013-10-24 | National Institute Of Advanced Industrial & Technology | 炭化珪素半導体装置のオーミック電極の製造方法 |
| WO2016022628A1 (fr) * | 2014-08-07 | 2016-02-11 | 3M Innovative Properties Company | Feuille réfléchissante et procédé de production correspondant |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299820A (ja) * | 1992-04-22 | 1993-11-12 | Toyo Metaraijingu Kk | フレキシブルプリント配線板 |
| JPH116061A (ja) * | 1997-06-17 | 1999-01-12 | Toray Eng Co Ltd | 二層フレキシブル回路基材の製造方法 |
| JP2006073766A (ja) * | 2004-09-01 | 2006-03-16 | Sumitomo Metal Mining Co Ltd | ２層フレキシブル基板及びその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260812A (ja) * | 1996-03-18 | 1997-10-03 | Toyo Metallizing Co Ltd | 無線型ｉｃカード用プリント回路基板 |
| US6171714B1 (en) * | 1996-04-18 | 2001-01-09 | Gould Electronics Inc. | Adhesiveless flexible laminate and process for making adhesiveless flexible laminate |
| JP4593808B2 (ja) * | 2001-02-22 | 2010-12-08 | 京セラ株式会社 | 多層配線基板 |
-
2005
- 2005-12-27 WO PCT/JP2005/023866 patent/WO2006087873A1/fr not_active Application Discontinuation
- 2005-12-27 JP JP2007503590A patent/JP4485570B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-02 TW TW095100030A patent/TW200637928A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05299820A (ja) * | 1992-04-22 | 1993-11-12 | Toyo Metaraijingu Kk | フレキシブルプリント配線板 |
| JPH116061A (ja) * | 1997-06-17 | 1999-01-12 | Toray Eng Co Ltd | 二層フレキシブル回路基材の製造方法 |
| JP2006073766A (ja) * | 2004-09-01 | 2006-03-16 | Sumitomo Metal Mining Co Ltd | ２層フレキシブル基板及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2006087873A1 (ja) | 2008-07-03 |
| TWI296657B (fr) | 2008-05-11 |
| TW200637928A (en) | 2006-11-01 |
| WO2006087873A1 (fr) | 2006-08-24 |
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