TW201003674A - Cu-ni-si-co copper alloy for electronic material and process for producing the same - Google Patents

Cu-ni-si-co copper alloy for electronic material and process for producing the same Download PDF

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TW201003674A
TW201003674A TW98108114A TW98108114A TW201003674A TW 201003674 A TW201003674 A TW 201003674A TW 98108114 A TW98108114 A TW 98108114A TW 98108114 A TW98108114 A TW 98108114A TW 201003674 A TW201003674 A TW 201003674A
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copper alloy
mass
alloy
crystal grain
grain size
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TW98108114A
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TWI381397B (en
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Hiroshi Kuwagaki
Naohiko Era
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Nippon Mining Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
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Abstract

A Cu-Ni-Si-Co alloy is provided which has mechanical and electrical properties which render the alloy suitable as a copper alloy for electronic materials. The alloy is even in mechanical properties. This copper alloy for electronic materials contains 1.0-2.5 mass% nickel, 0.5-2.5 mass% cobalt, and 0.3-1.2 mass% silicon, with the remainder being copper and incidental impurities. This alloy has an average crystal-grain diameter of 15-30 μm, and the average difference between a maximum crystal-grain diameter and a minimum crystal-grain diameter for examination fields of view each having an area of 0.5 mm2 is 10 μm or less.

Description

201003674 六、發明說明: 【發明所屬之技術領域 尤其係關於一 銅合金。 本發明係關於一種柄ψ 、 種析出硬化型銅合金, 種適用於各種電子機愛 微态零件之Cu-Ni-Si-Co系 L无前·技術】 對於連接器、開闕、繼 、’、電1111'、接聊、端子、導線牟蓉 之各種電子機器零件中所估田 等深木等 # i A # e ^ ^ 斤使用之電子材料用銅合金而言, 特性。、斤主, 间導電性(或熱傳導性)作為基本 符性。近年來,電子愛 /土个 、# I S V件之鬲積體化及小型化、薄壁化条 速發展,與此相對應地,對 存土化急 合全之要隹 W電子機器零件中所使用之鋼 口生之要未水準正逐步提高。 根據高強度及高盡f ^ 又及间導電性之觀點 銅合金之先前之以磷青銅 乍為電子材料用 合金,杯山* ' 為代表之固溶強化型錮 口金’析出硬化型銅合金之 化型銅合金而言,藉 在^加。對於析出硬 行時效處理,而使細錢和固溶體進 〜啊物均勻地公勒 度提高之同時,銅尹之固溶元 ’ &金之強 此’可獲得強度、彈性等’、篁,導電性提高。因 導性良好之材料。 貝馒/、且導電性、熱傳 析出硬化型銅合金,,—般稱為卡遜系 系銅合金係兼備較高之導電性、強产、及:之Cu-N1-Si 表性之銅合金,且係業界中正:考曲加工性之代 銅合金係藉由使細微…系金合金之-。該 糸玉屬間化合物粒子析出至 201003674 銅基質中來提高強度與導電率。 目月j正嘗忒藉由於卡遜合金中添加Co而進一步提高豆 特性。 八 於日本專利特開平1卜222641號公報(專利文獻1 )中’ Co與Νι相同地與Si形成化合物,使機械強度提高,而於 對Cu Co Si系進行時效處理時,其機械強度、導電性僅較 Cu-NA系合金略優。其中亦揭# :若成本允許,則亦可 达擇 Co Si系或Cu Ni C〇_Si系。此外亦揭示:該合金 之製造^法係於冷加工之後,以700〜92(TC進行再結晶處 理其人進行25%以下之冷加工、及42〇〜55〇。(3之時效 處理之後,進而進# 25%以下之冷加工及低溫退火之方法 (申請專利範圍第1〇項)。 曰本專利特表2005-532477號公報(專利文獻2)中揭 不一種熱銅合金’以重量計,其包括錄:1 %〜2.5%、钻: 〇·5〜2.0%、矽:0.5%〜1.5%以及由銅及不可避免之雜質所 構成之剩餘部分,鎳與鈷之合計含量為1.7%〜4.3%,(Ni + C〇)/Si之比為2:1〜7:1’該熱銅合金具有超過4〇%l ACS 之導電性。將鈷與矽相組合,為了限制粒子成長且提高耐 軟化性’而形成對時效硬化有效之矽化物。其中亦揭示: 乂 5金之製造方法係實施850°C〜1000°C之熱加工—實施 800 C〜1000 °C之固溶化處理—實施350。(:〜600。(:之溫度 之3 0刀知〜3 〇小時之第一時效退火—實施使剖面積減少 10 /。〜5〇%之冷加工—實施以低於第一時效退火溫度之溫 度進行之第二時效退火的方法(申請專利範圍第25項、第 201003674 26 項)。 國際公開第2006/101 172號說明書(專利文獻3)中揭 示:於固溶化處理中,若刻意提高加熱後之冷卻速度,則 可進一步發揮提高Cu-Ni-Si系合金之強度之效果,因此將 冷卻速度設為每秒約HTC以上而進行冷卻極具效果(段落 0028 )。 曰本專利特開平9-20943號公報中揭示如下之 Cn-Ni-Si-Co系合金之製造方法:於熱壓延之後,實施85% 以上之冷壓延,以450〜480t進行5〜3〇分鐘之退火之後, 實施30%以下之冷壓延,進而以45〇〜5〇(rc進行3〇〜 分鐘之時效處理(申請專利範圍第5項)。 [專利文獻1 ]曰本專利特開平丨丨_22264i號公報 [專利文獻2]曰本專利特表2〇〇5_532477號公報 [專利文獻3]國際公開第2〇〇6/1〇1 172號說明書 [專利文獻4]曰本專利特開平9_2〇943號公報 【發明内容】 發明所欲解決之胡擷 如此,已知係藉由於Cu_Ni_Si系合金中添加c〇而提高 強度及導電性,但先前之Cu_Ni_Si_c〇系合金存在如下問 題·即使為同一材料,根據測定部位之不同,強度、應力 緩和特性、彎曲粗度等機械特性亦容易產生偏差。 因此,本發明之課題之一在於提供一種具備較佳之機 械特性及電特性且機械特性均一之Cu_Ni_si_c〇系合金作 201003674 為電子材料用之銅合今。5„ ° ^又本發明之另一課題在於提供 一種用以製造上述Cu_N卜Si_co系合金之方法。 簦決問題之枯浙丰恐 首先’本發明者發現:至今為止之Cu_N“si c〇系合金 之結晶粒之大小偏差較A,且混合有大粒子與小粒子,進 而已查明該結晶粒徑之不均一性與機械特性之偏差有關。 ;U Ni Si Co系合金中’因添加彳c〇,故必須以比通常 之Cu-NhS!系合金高之溫度進行固溶化處理,此外其中再 、’口日日粒今易粗大化。另一方面,固溶化處理步驟之前段中 析出之結晶物或析出物等之第二相粒子會成為障礙物而阻 礙結晶粒之成長。目此’ Cu_Ni_Si_c〇系合金與通常之 S i系&金相比較,存在有再結晶粒之偏差易變大之 傾向。 因此,本發明者對減小再結晶粒之偏差之方法進行銳 意研究之後’獲得如下見解:於固溶化處理步驟之前段, 預先使細微之第二相粒子儘可能以等間隔而同樣地析出直 銅母相中,藉,匕’即使以較高之溫度進行固溶化處理,結 晶粒因第二相粒子之釘扎效果(Pinning effeet)而不會變得 太大,而且釘扎效果會均勻地作用於整個鋼母相中,因此 亦可使成長之再結晶粒之大小均一化。而且,已知其結果 為可獲得機械特性之偏差小之Cu_Ni_Si_c。系合金。 以上述見解為背景而完成之本發明之—形態係一種電 子材料用銅合金’其含有Ni : [Ο〜2.5質量%、c〇 : 〇.5~ 2.5質量。/〇、Si : (^〜丨2質量%,剩餘部分由α及不 <避 6 201003674 二雜質所構成’該電子材料用鋼合金之平均結晶粒徑為 # m ’ #觀察視野〇.5職2《最大結晶粒徑與最小二 晶粒徑之差之平均值為1〇Am以下。 取 於一特定實施形態中,本發明之銅合金進— 大為0.5質量%之Cr。 h有最 於另—特定實施形態中,本發明之銅合金進一步包八 總計最大為0.5質量%之選自Mg、Mn、岣及?之上種或〜 種以上。 f201003674 VI. Description of the Invention: [The technical field to which the invention pertains is in particular to a copper alloy. The invention relates to a handle shank, a precipitation hardening type copper alloy, a Cu-Ni-Si-Co system which is suitable for various electronic machines and loves micro-parts, and has no technology. For the connector, the opening, the relay, the ' , electric 1111', pick-up, terminal, wire, various electronic machine parts, such as the estimated field of dark wood, etc. # i A # e ^ ^ jin used in the use of copper alloys, characteristics. , the main charge, the electrical conductivity (or thermal conductivity) as a basic character. In recent years, the hoarding and miniaturization of the electronic love/earth and #ISV parts, and the development of the thin-walled strips, in response to this, the enthusiasm for the preservation of the soil is in the electronic machine parts. The use of the steel mouth is not up to standard. According to the viewpoint of high strength and high end f ^ and interconductivity, the former copper alloy of phosphorous bronze is used as an alloy for electronic materials, and the solid solution-reinforced niobium gold represented by the cup mountain* 'precipitates the hardened copper alloy. In the case of a copper alloy, it is added. For the precipitation of hard aging treatment, and the fine money and solid solution into the ~ ah uniform uniformity while improving, copper Yin's solid solution element ' & Jin Zhiqiang this 'available strength, elasticity, etc.', Oh, the conductivity is improved. Materials with good conductivity. Bellows/, and conductive, heat-transferred hardened copper alloy, commonly known as the Carson-based copper alloy with high electrical conductivity, strong production, and: Cu-N1-Si copper Alloy, and the industry is in the positive: the test of the processing of the generation of copper alloy by making the fine ... ... gold alloy -. The eucalyptus compound particles are precipitated into the 201003674 copper matrix to increase strength and electrical conductivity.目月j is trying to further improve the bean characteristics by adding Co to the Carson alloy. In Japanese Unexamined Patent Publication No. Hei No. 222641 (Patent Document 1), 'Co forms a compound with Si in the same manner as Νι, and the mechanical strength is improved, and when the Cu Co Si system is subjected to aging treatment, its mechanical strength and electrical conductivity are obtained. The properties are only slightly better than the Cu-NA alloy. Among them, it is also revealed that the Co Si system or the Cu Ni C〇_Si system can be selected if the cost permits. In addition, it is also disclosed that the method of manufacturing the alloy is after cold working, and is subjected to recrystallization treatment by TC for 25% or less of cold working, and 42 〇 to 55 〇. (3 after aging treatment, further advances #25% or less of the cold working and the low temperature annealing method (Patent Application No. 1). 曰Patent No. 2005-532477 (Patent Document 2) discloses a hot copper alloy 'by weight, which includes Record: 1%~2.5%, drill: 〇·5~2.0%, 矽: 0.5%~1.5% and the remainder consisting of copper and unavoidable impurities, the total content of nickel and cobalt is 1.7%~4.3% , (Ni + C〇) / Si ratio is 2:1~7:1' The hot copper alloy has conductivity of more than 4〇% ACS. Combining cobalt with yttrium, in order to limit particle growth and improve softening resistance It forms an effective antimony for age hardening. It also reveals that: 乂5 gold is manufactured by performing thermal processing at 850 ° C to 1000 ° C - performing a solution treatment at 800 C to 1000 ° C - 350. (: ~600. (: The temperature of the 30 knives ~ 3 〇 hours of the first aging annealing - implementation to reduce the cross-sectional area of 10 /. 5 % % cold working - a method of performing second aging annealing at a temperature lower than the first aging annealing temperature (Application No. 25, No. 201003674 26) International Publication No. 2006/101 172 According to the specification (Patent Document 3), in the solution treatment, if the cooling rate after heating is intentionally increased, the effect of improving the strength of the Cu-Ni-Si alloy can be further exerted, so that the cooling rate is set to about twice per second. The method of producing a Cn-Ni-Si-Co alloy as follows, which is more than 85% after hot rolling, is disclosed in the above-mentioned Japanese Patent Publication No. Hei 9-20943. Cold rolling, after annealing for 5 to 3 minutes at 450 to 480 tons, cold rolling of 30% or less is carried out, and further aging treatment is performed for 45 〇 to 5 〇 (rc for 3 〇 to minutes) (Applicant's Scope 5) [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. 2, No. 5, No. 5, pp. Specification No. 172 [Patent Document 4] Japanese Patent Publication No. 9-2〇943. SUMMARY OF THE INVENTION In order to improve the strength and electrical conductivity of Cu_Ni_Si alloy by adding c〇, the prior Cu_Ni_Si_c lanthanum alloy has the following problems. In the same material, mechanical properties such as strength, stress relaxation characteristics, and bending thickness are also likely to vary depending on the measurement site. Therefore, one of the problems of the present invention is to provide a mechanical property having uniform mechanical properties and electrical properties. The Cu_Ni_si_c lanthanide alloy is used as the alloy for electronic materials 201003674. Further, another object of the present invention is to provide a method for producing the above Cu_Nb Si_co alloy. The problem is that the first inventor discovered: Cu_N "si c〇 system up to now" The size of the crystal grains of the alloy is smaller than A, and large particles and small particles are mixed, and it has been found that the heterogeneity of the crystal grain size is related to the deviation of the mechanical properties. In the U Ni Si Co-based alloy, since 彳c〇 is added, it is necessary to carry out a solution treatment at a temperature higher than that of a usual Cu-NhS!-based alloy, and further, the granules are easily coarsened. On the other hand, the second phase particles such as crystals or precipitates precipitated in the previous stage of the solution treatment step become obstacles and hinder the growth of the crystal grains. Therefore, the Cu_Ni_Si_c lanthanum alloy tends to have a large variation in recrystallized grains as compared with the conventional S i series & Therefore, the inventors of the present invention conducted intensive studies on the method of reducing the deviation of recrystallized grains, and obtained the following findings: in the stage before the solution treatment step, the fine second phase particles are preliminarily precipitated at equal intervals as much as possible. In the copper matrix, borrowing, 匕' even if the solution is treated at a higher temperature, the crystal grains do not become too large due to the pinning effect of the second phase particles, and the pinning effect is uniform. It acts on the entire steel matrix, so that the size of the growing recrystallized grains can also be uniformized. Further, it is known that Cu_Ni_Si_c having a small variation in mechanical properties can be obtained. Alloy. The present invention, which is completed in the light of the above-mentioned findings, is a copper alloy for an electronic material which contains Ni: [Ο~2.5% by mass, c〇: 〇.5 to 2.5 mass. /〇, Si : (^~丨2% by mass, the remainder is composed of α and not < avoided 6 201003674 two impurities; the average crystal grain size of the steel alloy for electronic materials is # m ' #视视〇5. The average value of the difference between the maximum crystal grain size and the minimum two crystal grain size is 1 〇 Am or less. In a specific embodiment, the copper alloy of the present invention is 0.5% by mass of Cr. In another embodiment, the copper alloy of the present invention further comprises a total of 0.5% by mass selected from the group consisting of Mg, Mn, yttrium and yttrium or above.

於又一特定實施形態中,本發明之銅合金進一步包含 總計最大4 2.0質量%之選自&及以之(種或2種。 於又一特定實施形態中,本發明之銅合金進一步包含 總計最大為2.0質量。/〇之選自As、Sb、Be、B、Ti、Zr、幻 及Fe之1種或2種以上。 又’於另—形態中,本發明係一種銅合金之製造方法, 其包括依序進行以下步驟: 步驟1 ’對具有所需組成之鑄錠進行熔解鑄造; 步驟2’以95CTC〜1050。(:加熱1小時之後進行熱壓 延,將熱壓延結束時之溫度設為85〇它以上,將自850°C至 400 C之平均冷卻速度設為丨5乞/s以上而進行冷卻; 步驟3 ’進行加工度為85 %以上之冷壓延; 步驟4 ’進行以35〇〜5〇〇乞加熱1〜24小時之時效處 理; 步驟5 ’以95 0X:〜l〇5(TC進行固溶化處理,將材料温 度自850°C下降至400X:之平均冷卻速度設為15°C /s以上而 201003674 進行冷卻; 步驟6 ’進行隨意之冷壓延; v驟7 ’進行時效處理;以及 V驟8,進行隨意之冷壓延。 於又-形態中’本發明係一種具備上 品 义硐合金之伸銅 於又一形態中,本發明係一種具傷上 合金之電子 機器零件 根據本發明,可使結晶粒徑於適當 故可獲得機械特性均一之Cu_Ni_Si_C。系合金圍内均一化, 【實施方式】In still another specific embodiment, the copper alloy of the present invention further comprises a total of 42.0% by mass selected from & and (either species or two. In yet another specific embodiment, the copper alloy of the present invention further comprises The total amount is 2.0 mass. /〇 is selected from one or more of As, Sb, Be, B, Ti, Zr, phantom and Fe. In another embodiment, the present invention is a copper alloy. The method comprises the steps of: step 1 'melting casting an ingot having a desired composition; step 2' at 95 CTC to 1050. (: heating after 1 hour, hot rolling, at the end of hot rolling The temperature is set to 85 〇 or more, and the average cooling rate from 850 ° C to 400 C is set to 丨 5 乞 / s or more for cooling; Step 3 'The cold rolling is performed with a working degree of 85% or more; Step 4 ' Perform aging treatment with 35〇~5〇〇乞 for 1~24 hours; Step 5' with 95 0X:~l〇5 (TC for solution treatment, the material temperature is lowered from 850 °C to 400X: average cooling The speed is set to 15 ° C / s or more and 201003674 is cooled; Step 6 ' Arbitrarily cold rolling; v7' to carry out aging treatment; and V to 8 to carry out random cold rolling. In the case of - in the form, the present invention is a copper with a top grade alloy in another form, The present invention relates to an electronic machine component having a wounded alloy. According to the present invention, Cu_Ni_Si_C having uniform mechanical properties can be obtained, and the alloy is uniform in the alloy. [Embodiment]

Ni、CUSi,可藉由實施適當之 化合,,不使導電率劣化而實現高強度化。而形成金屬間 若Ni、Co及Si之涞力|、 之添加量分別為NnNi and CUSi can be made high in strength without deteriorating the conductivity by performing appropriate combination. The amount of Ni, Co, and Si between the metals is formed, and the amount of addition is Nn.

Co :未滿〇_5質量。/〇、 滿10質量%、 ⑴.未滿〇·3質量。 需之強度,相反地,若Ni : '彳無法獲得所 質…—質量%=;;量:,。:〜 電率明顯降低,進而熱加工 現兩強度化,但導 添加量為Ni · 1.0〜2.5質量%、c . Nl、C〇及Si之 〇·3 〜1.2 質量 %。Ni、c〇 及 2·5 質量。/〇、Si : 質里。/❶、C〇..0.5〜2.〇t4 —N1:1.5〜2〇 !· 〇·5〜以賢量。/” 201003674 界,L於炫解禱造時之冷卻過程中會優先析出至結晶粒 從而可抑Γ對粒界進行強化’於熱加工時不易產生裂痕, 制良率之降低。亦即,利用固溶化處理等對熔解 :造…行再,, 玍从Cr作為主成分之bcc結構 之化合物。對於、^ 「. 得之析出粒子或與S! 旦中“對於通常之CU-Nl_Sl系合金而言,所添加之Sl 里中,無助於時效析出之Si會於固溶於 制導雷率夕μ 1 Τ <狀悲、下抑 進一 升’但藉由添加作切化物形成元素之&而 y 夕化物析出,可減少固溶Si量,而^ 〇 而提昇導電率。铁而,从可不損害強度 '、、、而,右Ci·浪度超過〇.5 形成粗大之第-相私工二12 則奋易 弟-相粒子,因而會損害產品特性 本發明之Cu-Ni-Si-Co系合金中,% α此於 〇乐Q金中,取大可添加〇 5Co : Not full 〇 _5 quality. /〇, 10% by mass, (1). Not full 〇·3 mass. The strength required, conversely, if Ni: '彳 can not get the quality...-%%=; Quantity:,. : ~ The electrical conductivity is significantly reduced, and the thermal processing is now two-strength, but the amount of lead is Ni · 1.0~2.5% by mass, c. Nl, C〇 and Si 〇·3~1.2% by mass. Ni, c〇 and 2. 5 mass. /〇, Si: Quality. /❶, C〇..0.5~2.〇t4 —N1:1.5~2〇 !· 〇·5~ to sage. /" 201003674 Bounds, L will be preferentially precipitated into crystal grains during the cooling process of the tears, which can suppress the grain boundary. It is not easy to crack when hot processing, and the yield is reduced. That is, use Solution-solution treatment, etc., for melting, and then, from a compound having a bcc structure containing Cr as a main component, for ", the resulting precipitated particles or with S! Dan" is for the usual CU-Nl_Sl alloy. In the added Sl, the Si that does not contribute to the aging precipitation will be in the solid solution to induce the lightning rate 夕μ 1 Τ < sorrow, lower one liter, but by adding the dicing forming element & The precipitation of y yttrium can reduce the amount of solid solution Si and increase the conductivity. Iron, from the right without compromising the strength ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, In the Ni-Si-Co alloy, % α is in the Q-Q gold, and it can be added to the 〇 5

Cr。然而,若未滿〇 〇3質量%,則其效 、 為添加0.03〜0.5質量%,更佳’、心、’因而較佳 里/〇更佳為添加〇.〇9〜〇.3質量%。 力緩= =Mg、Mn、A“。,Wl η 特性而不損害導電率。主要藉由使上 述Mg、Mn、A“p固溶於母相而發揮 可藉由使第二相粒子”有上述Mg、 =: 更進一步之效果。然而,若M 而發揮 計超過0.5%,則特性改善效 Ag及P之漠度之總 因此,於本發明之Cu_Ni_Si …生 Λ 〇 c , A/r σ金中,攻大可添加總計 為.5貝“之選自―八……種或2種以上。 9 201003674 …、而右未滿0.01質量 計添加0.01〜〇 5曾 、/、政果較小’因此較佳為總Cr. However, if it is less than 3% by mass, the effect is 0.03 to 0.5% by mass, more preferably ', heart, 'so it is better to add 〇.〇9~〇.3 mass% . Force retardation = =Mg, Mn, A", Wl η characteristics without impairing electrical conductivity. Mainly by making the above Mg, Mn, A "p solid soluble in the parent phase, can be achieved by making the second phase particles" The above Mg, =: a further effect. However, if M is more than 0.5%, the characteristic improves the total of the inferiority of Ag and P. Therefore, in the present invention, Cu_Ni_Si ... Λ 〇 c , A / r σ In the gold, the attack can add a total of .5 shells, which is selected from the "eight" or two or more types. 9 201003674 ..., and the right is less than 0.01 mass, adding 0.01~〇 5, and /, the government is smaller' so it is better to total

Sn々7 更佳為總計添加〇.(M〜02質蜃。/ 應力緩和特 主要藉由使 然而’若Sn 若添加微量之Sn及 性、鍍敷性等之產 則會改善強度 上述sqZn固溶於母相=告導電率 及Zn之總計超過2 〇質量。:,添加之效果。然而’若Sn 會損害製造性。因此,。則特性改善效果將飽和,且 最大可添加總計為2·。質量::之Cu-Nl_Sl-C0系合金中’ 種。然而,若未滿。.〇5質量°。,選自…11中之1種或2 為總計添加0‘05〜2.0質°則其效果較小,因此較佳 量%。 、里〇,更佳為總計添加0.5〜1 .〇質 對於 As、Sb、Be、B、Ti φ ,-b ^ 0 .. .A Zr、A1 及 Fe 而言,根據所 要求之產。σ特性而對添加 強 $進仃调整,藉此改善導電率、 矣度、應力緩和特性、鍍敷 ^ .專之產品特性。主要藉由使 上述 As、Sb、Be、Β、Ti、7 從 ;, Γ、A1及固溶於母相而發揮 添加之效果,但亦可藉由使第_ 更第一相粒子中含有上述As、Sb、It is preferable to add 〇. (M~02 蜃 总计 / / / / / / / / / / / / / / / / / / / / / / / / / / / 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力 应力Dissolved in the parent phase = the total conductivity and the total amount of Zn exceed 2 〇 mass.:, the effect of addition. However, if Sn will impair manufacturability, the characteristic improvement effect will be saturated, and the maximum addable amount is 2· Quality:: Cu-Nl_Sl-C0 alloy in the 'species. However, if not full.. 〇5 mass °., one of the selected from 11 or 2 for the total addition of 0'05~2.0 quality ° The effect is small, so the preferred amount is %, 〇, preferably 0.5~1 in total. The enamel is for As, Sb, Be, B, Ti φ, -b ^ 0 .. .A Zr, A1 and In the case of Fe, the additive strength is adjusted according to the required σ characteristics, thereby improving conductivity, twist, stress relaxation characteristics, plating properties, and product characteristics. Sb, Be, bismuth, Ti, 7 from;, Γ, A1 and solid solution in the mother phase to exert the effect of addition, but also by including the above-mentioned As in the first phase particles , Sb,

Be ' B、Ti、Zr、A1 b c 丄、 e ’或者形成新組成之第二相粒子 而發揮更進一步之效果。 m w而’若該等元素之總計超過2.0 貝量%則特性改善效果將飽和,且會損害製造性。因此, 發明W系合金中,最大可添加總計為2·〇 負量%之選自As、Sb、Be、Β 丁. ^ 以B、Ti、Zr、A1及Fe之1種或 種以上。然而,若未滿〇〇〇l質量%,則其效果較小因 10 201003674 此較佳為總計禾4 Λ 艰加0.001〜2.0質量%,更佳為總計添加〇 〇5 〜1.0質量%。 右上述 Mg、Mn、Ag、Ρ、Sn、Zn、As、Sb、Be、Β、Be ' B, Ti, Zr, A1 b c 丄, e ' or a second phase particle forming a new composition exerts a further effect. m w and ' If the total of these elements exceeds 2.0 vol%, the property improving effect will be saturated and the manufacturability will be impaired. Therefore, among the W-based alloys, a maximum of 2·〇 of a negative amount can be added and selected from the group consisting of As, Sb, Be, and .. ^ One or more kinds of B, Ti, Zr, A1, and Fe. However, if it is less than 1% by mass, the effect is small. 10 201003674 This is preferably a total of 4 Λ 0.001 to 2.0% by mass, more preferably 〇 5 to 1.0% by mass. Right above Mg, Mn, Ag, yttrium, Sn, Zn, As, Sb, Be, Β,

Ti、Zr、A1 及 Fe 夕、* L θ . , x <添加量合計超過3 ·0%,則易損害製造性, 口而°亥等之合叶較佳為2.0質量%以下,更佳為! ·5質量% 以下。 、 〇 結晶粒徑 結晶粒會對強度造成影響,強度與結晶粒徑之-1/2次方 成比例即霍爾-侃 隹明佩朵(Hall-Petch)方程式一般而言會成立。 又’粗大之結晶粒會使彎曲加工性惡化’成為彎曲加工時 之表面粗糙之主要原因。因此,關於銅合金,一般而言^ :。曰曰粒之細礒化可提高強度’故而較佳。I體而言,較佳 為3〇" m以下’更佳為23" m以下。 另一方面,如本發明之Cu-Nl-Si_Co系合金為析出強化 i之口金’因此必須注意第二相粒子之析出狀態。於時效Ti, Zr, A1, and Fe, * L θ . , x < When the total amount of addition exceeds 3%, the manufacturing property is liable to be impaired, and the hinge of the mouth and the like is preferably 2.0% by mass or less, more preferably for! · 5 mass% or less. 〇 Crystal grain size The crystal grain has an effect on the strength. The intensity is proportional to the -1/2 power of the crystal grain size, that is, the Hall-Petch equation is generally established. Further, the fact that the coarse crystal grains deteriorate the bending workability is a cause of surface roughness during bending. Therefore, regarding copper alloys, generally ^:. It is preferred that the fineness of the granules can increase the strength. In the case of the I body, it is preferably 3 〇 " m or less 'more preferably 23 " m or less. On the other hand, the Cu-Nl-Si_Co-based alloy of the present invention is the gold of the precipitation strengthening i. Therefore, it is necessary to pay attention to the precipitation state of the second phase particles. Timeliness

處理時析出至結晶粒内之第二相粒子有助於提高強度,但 析出至結晶粒界之第二相粒子幾乎無助於提高強度。因 :’為了提高強度,使第二相粒子析出至結晶粒内較佳。 若結晶粒徑變小’則粒界面積變大,目而於時效處理時, 第二相粒子容易優先析出至粒界。為了使第二相粒子析出 =粒内,㈣必須具有某程度之大小。具體而言, 較佳為15#m以上,更佳為18#m以上。 15〜30# m之範 #平均結晶粒徑 本發明中係將平均結晶粒徑控制於 圍。平均結晶粒徑較佳為18〜23 # m。藉由 11 201003674 控制於此種範圍,可 j均衡地獲得由結晶粒細微化產生之強 又曰门:、及由析出硬化產生之強度提高效果該兩個效 果。又,若為該範圍之結晶粒徑,則可獲得優異之彎曲加 工性及應力緩和特性。 β本發月中’所δ胃結晶粒徑,係指利用顯微鏡對平行於 【=方向之厚度方向之剖面進行觀察時,包圍各個結晶教 之=小圓的直輕,所謂平均結晶粒徑係指上述結 平均值。 < 本發明中’每觀察視野〇.5mm2之最大結晶粒徑與最小 結晶粒徑之差的平均值為1G//m以下,較佳為7^以下。 差之平均值較理想為〇心’但實際上難以實現,因而將 限之實際之最低信却 i ^ , 值。又為3#m,典型而言最佳為3〜7以m。 於此,所謂最大結晶粒徑,得)匕於 Jm n c ? ^係扣於一個〇.5mm2之觀察視 _所察到的最大之έ士曰物你. 取A I日日拉徑’所谓最小結晶粒徑,係 於同一視野中所觀察到的最士曰 曰 、 J取』之,、、α日日粒役。於本發明中, 在複數處之觀察視野中分別束 一 T刀引承付取大結晶粒徑與最小結曰 粒徑之差,將該等差之平均值 J徂馬取大結晶粒徑與最小社 晶粒徑之差之平均值。 ° 最大結晶粒徑與最小妹晶物沉 呈 一 』、,σ日日粒住之差較小,此係指結曰 粒径_ 之大小均,同-4;J- Ψΐί rin y*- / 材枓内之母個測定部位之機械特性 之偏差減小。其結果’會使本發明之銅合金進行加Θ 之伸銅品或電子機器零件之品質穩定性提高。 于 1造方法 卡遜系銅合金之一般製裎Φ,昔Α 表程中首先使用大氣熔解爐, 12 201003674 將電解銅、Ni、Si、c。等之原料您解 融物。繼而’將該溶融物鑄造成鑄鍊。其;::、:成之熔 並重複進行冷壓延與熱處理、仃…壓延, 性之條或箱。敎處理中包…“具有所需厚度及特 於…入 固溶化處理與時效處理。固溶 处ί係、以約700〜1000。〇之高溫進行加熱,使第 粒子固溶於Cu母質中,同時使 :-相 熱麼延兼用作固溶化處理。時效處理中,係㈣35〇〜= 55〇C之溫度範圍加熱丨小時以上,使已在固溶化處理中固 =之第二相粒子料奈米級之細微粒子而析出。於該時效 處理中,強度與導電率會上升。為了獲得更高之強度,有 時於時效處理之前及/或時效處理之後進行冷壓延。又,於 時效處理之後進行冷壓延之情形時,於冷壓延之後進行應 力消除退火(低溫退火)。 於上述各步驟之間歇,適當地進行用以除去表面之氧 化銹皮之研削、研磨、及珠擊(sh〇tblast)酸洗等。 本發明之銅合金基本上亦會經由上述製程,但為了將 平均結晶粒徑及結晶粒徑之偏差控制於本發明中規定之範 圍’如上所述,重要的是於固溶化處理步驟之前段,預先 使細微之第二相粒子儘可能以等間隔且同樣地析出至銅母 相中。為了獲得本發明之銅合金,尤其必須注意以下觀點 而進行製造。 首先’於鑄造時之凝固過程中會不可避免地產生粗大 之結晶物’於鑄造時之冷卻過程中會不可避免地產生粗大 之析出物’因此於其後之步驟中,必須將該等結晶物固溶 13 201003674 於母相中。若以950°C〜105(rc保持!小時以上之後進行埶 壓延,且將熱壓延結束時之溫度設為85(rc以上,則即使於 已添加有Co,進而已添加有以之情形時,上述結晶物亦可 固溶於母相中。95(TC以上之溫度條件與其它卡遜系合金之 情形相比係較高之溫度設定。若熱壓延前之保持溫度未滿 950°C則固溶會不充分,若超過1〇5〇t則存在材料熔解之可 能性。又,若熱壓延結束時之溫度未滿85〇t則已固溶之元 素會再次析出,因而難以獲得高強度。因此,為了獲得高 強度,較佳為以85(TC結束熱壓延,並迅速冷卻。 此時,若冷卻速度緩慢,則含有c〇或Cr之si系化合 物將再次析出。當利用此種組成進行用以提高強度之熱處 理(時效處理)時,因以冷卻過程中析出之析出物為核心 而成長為無助於提高強度之粗大之析出物,故無法獲得高 強度。因此,必須儘可能地提高冷卻速度,具體而言為Η °C/s以上。然而,於至40(rc左右為止之溫度下,第二相粒 子之析出#父為顯著,故未滿4〇〇時之冷卻速度不成為問 題。因此,本發明中,將材料溫度自85(TC至400。(:為止之 平均冷卻速度設為15°C/s以上,較佳為20〇C/s以上而進行 冷卻。所謂“自850t:降低至4001為止時之平均冷卻速 度’係指對材料溫度自850°C降低至650T:為止之冷卻時 間進行測量,並藉由“(850- 400 ) ( t: ) /冷卻時間(s ),, 而算出之值(t /s)。 作為加快冷卻之方法’水冷最有效。然而,冷卻速度 會根據用於水冷之水之溫度而變化,因此可藉由進行水溫 14 201003674 管理而進—步加快冷卻。若 、土戍巧 馬25 c以上,則有時會盔 法獲付所需之冷卻速度,因此 …、 材斜访入 保持為25°C以下。若將 才料放入至儲水之槽内進行 變為25y m "則水之溫度會上升且易 馮2 5 C以上,因此較佳為以霧 杆喰+ 務狀(淋浴狀或薄霧狀)進 仃嘴務,以按照固定之水溫(2 ^ ^ M下)對材料進行冷卻, 或使恒常低溫之水於水槽中流 攸而防止水溫上升。又, 曰权水冷噴嘴或增加每單位時 速度上升。 Ί之水里,藉此亦可使冷卻 屮:熱壓延之後實施冷壓延。為了使析出物均勾地析 出/施該冷壓延以增加成為析出位置之畸變較佳為以 85 /〇以上之軋縮率而實施 办 I更佳為以95%以上之軋縮 竿而實施冷壓延。若不推片、人两、, 订冷壓延而於熱壓延之後不久實 施固溶化處理,則析出物不舍 ' 、 个#勺勻地析出。亦可適當地重 複熱壓延及其後之冷壓延之組合。 一於冷壓延之後實施第—時效處理。若於實施本步驟之The second phase particles which are precipitated into the crystal grains during the treatment contribute to the improvement of the strength, but the second phase particles which are precipitated to the crystal grain boundaries hardly contribute to the improvement of the strength. Because: In order to increase the strength, it is preferred to precipitate the second phase particles into the crystal grains. When the crystal grain size becomes small, the grain boundary area becomes large, and when the aging treatment is desired, the second phase particles are preferentially precipitated to the grain boundary. In order to precipitate the second phase particles = within the grain, (4) must have a certain degree of size. Specifically, it is preferably 15#m or more, and more preferably 18#m or more. 15~30#m##Average crystal grain size In the present invention, the average crystal grain size is controlled. The average crystal grain size is preferably 18 to 23 #m. By controlling the range of 11 201003674, it is possible to obtain a balance between the strong entanglement caused by the crystallization of the crystal grains and the strength-increasing effect by precipitation hardening. Further, when the crystal grain size is in this range, excellent bending workability and stress relaxation properties can be obtained. In the present month, the δ-grain crystal grain size refers to the straightness of the circle surrounded by the crystals in the direction of the thickness direction of the direction of the direction of the == direction. The above average value. < In the present invention, the average value of the difference between the maximum crystal grain size and the minimum crystal grain size per observation field of 55 mm 2 is 1 G/m or less, preferably 7 cm or less. The average of the difference is ideally ambiguous, but it is actually difficult to achieve, and thus the actual minimum signal is limited to i ^ , value. Also 3#m, typically 3 to 7 in m. Here, the so-called maximum crystal grain size, which is obtained by Jm nc? ^ is buckled in a 〇.5mm2 observation _ the largest gentleman found in you. Take AI day and day diameter 'the so-called minimum crystallization The particle size is the same as that of the Shih Tzu, J, and α, which are observed in the same field of view. In the present invention, in the observation field of the plurality of points, the difference between the large crystal grain size and the minimum crust particle size is taken by the beam-T-knife, and the average value of the difference is obtained. The average of the difference between the smallest crystallite sizes. ° The maximum crystal grain size is the same as the minimum crystal grain sinking, and the difference between the granules and the grain size is small. This refers to the size of the crucible particle size _, which is the same as -4; J- Ψΐί rin y*- / The deviation of the mechanical properties of the measured portion of the material in the material is reduced. As a result, the quality stability of the copper alloy or the electronic component parts to which the copper alloy of the present invention is twisted is improved. Manufacture method of Casson copper alloy 裎 Φ, Α Α The first use of atmospheric melting furnace, 12 201003674 will be electrolytic copper, Ni, Si, c. Wait for the raw material to dissolve you. The melt is then cast into a cast chain. It;::,: melted into it and repeated cold rolling and heat treatment, 仃...calendering, strip or box of sex.敎Processing package..."has the required thickness and speciality...in solution treatment and aging treatment. The solid solution is heated at a high temperature of about 700~1000. The particles are solid-dissolved in the Cu matrix. At the same time, :- phase heat is used for solid solution treatment. In the aging treatment, the temperature range of (4) 35〇~= 55〇C is heated for more than 丨 hours, so that the second phase particle material has been solidified in the solution treatment. In the aging treatment, the strength and electrical conductivity are increased. In order to obtain higher strength, cold rolling is sometimes performed before the aging treatment and/or after the aging treatment. Then, in the case of cold rolling, stress relief annealing (low temperature annealing) is performed after cold rolling. In the interval of the above steps, the grinding, grinding, and beading of the rust scale for removing the surface are appropriately performed (sh〇 Tblast) pickling, etc. The copper alloy of the present invention is basically also subjected to the above-described process, but in order to control the deviation of the average crystal grain size and the crystal grain size within the range specified in the present invention, as described above, it is important In the preceding stage of the solution treatment step, the fine second phase particles are preliminarily precipitated into the copper matrix phase at equal intervals as much as possible. In order to obtain the copper alloy of the present invention, it is particularly necessary to pay attention to the following viewpoints. First of all, 'the coarse crystals will inevitably be produced during the solidification process during casting'. In the cooling process during casting, coarse precipitates will inevitably occur. Therefore, in the subsequent steps, the crystals must be crystallized. Solid solution 13 201003674 In the parent phase, if 950 ° C ~ 105 (rc is held for more than hrs after rc, and the temperature at the end of hot rolling is set to 85 (rc or more), even if Co is added Further, when it is added, the crystal may be dissolved in the matrix phase. 95 (The temperature condition above TC is higher than that of other Carson-based alloys. If hot rolling If the temperature is less than 950 °C, the solid solution will be insufficient. If it exceeds 1〇5〇t, the material may melt. If the temperature at the end of hot rolling is less than 85〇t, it will be solid solution. The elements will be precipitated again. Therefore, it is difficult to obtain high strength. Therefore, in order to obtain high strength, it is preferable to heat-calender at 85 (TC) and rapidly cool. At this time, if the cooling rate is slow, the si-based compound containing c〇 or Cr will be precipitated again. When the heat treatment (aging treatment) for increasing the strength is carried out by using such a composition, the precipitate which precipitated during the cooling process is the core and grows into a coarse precipitate which does not contribute to the improvement of strength, so that high strength cannot be obtained. Therefore, it is necessary to increase the cooling rate as much as possible, specifically, Η ° C / s or more. However, at a temperature of up to about 40 rc, the precipitation of the second phase particles is significant, so it is less than 4 〇. The cooling rate in the case of 〇 is not a problem. Therefore, in the present invention, the material temperature is from 85 (TC to 400. (The average cooling rate is set to 15 ° C / s or more, preferably 20 〇 C / s or more. And cooling. The so-called "average cooling rate from 850t: down to 4001" is measured by cooling the material temperature from 850 ° C to 650 T: and by "(850-400 ) ( t: ) / cooling Time (s), and the calculated value (t / s). As a way to speed up cooling, water cooling is most effective. However, the cooling rate varies depending on the temperature of the water used for water cooling, so that the cooling can be accelerated by performing the water temperature 14 201003674 management. If the soil is more than 25 c, the helmet will sometimes be given the required cooling rate, so the material will be kept below 25 °C. If the material is put into the tank of the water storage and becomes 25y m " then the temperature of the water will rise and the temperature is more than 2 5 C, so it is better to use the mist rod 喰 + service (shower or mist) In order to prevent the water from rising, the material is cooled according to the fixed water temperature (2 ^ ^ M), or the constant low temperature water is allowed to flow in the water tank. Also, the water-cooled nozzle of the 曰 right increases the speed per unit time. In the water of the crucible, it is also possible to cool the crucible: cold calendering is carried out after hot rolling. In order to precipitate the precipitates and apply the cold rolling to increase the distortion at the deposition position, it is preferable to carry out the cold reduction at a rolling reduction ratio of 85 / 〇 or more, and to perform cold rolling at 95% or more. Calendering. If the film is not pushed, the person is two, and the solution is cold-rolled and the solution treatment is carried out shortly after the hot rolling, the precipitates are precipitated uniformly. The combination of hot rolling and subsequent cold rolling can also be appropriately repeated. The first aging treatment is performed after the cold rolling. If you implement this step

前殘存有第二相粒子,則告奢A 丁 則田實知本步驟時,此種第二相粒 子會進一步成長,因 印、 本v驟中取初析出之第二相粒子與 粒徑會產生差異,但於太路 士 '本發月中’已於前段之步驟中使第Before the second phase particles remain, it is a luxury. A Ding Tian knows that in this step, the second phase particles will grow further, because the second phase particles and particle size will be precipitated in the first step. There is a difference, but in the steps of the previous paragraph,

一相粒子大致消失,闵仏,WA 因此可使細微之第二相粒子以均勻 之大小而同樣地析出。 ’、’、而右第冑效處理之時致溫度過低,則帶來釘扎 效果之第二相粒子之析出量會減少,而僅可部分地獲得由 固溶化處理產生之釘札效果’因而結晶粒之大小變得不 句另方面若時效溫度過高,則第二相粒子變得粗大, 15 201003674 又,因第二相粒子會不均句地析出,故第二相粒子之粒徑 之大小會變得不均。又,時效時間越長則第二相粒子越生 長’因而必須設定適當之時效時間。 以350〜50(TC進行1〜24小時之第一時效處理,較佳 為以350 C以上且未滿400°C之溫度進行12〜24小時之第 一時效處理、以40(TC以上且未滿45〇t之溫度進行6〜12 小時之第一時效處理、以45(TC以上且未滿5〇〇ti溫度進 行3〜6小時之第一時效處理’藉此,可使細微之第二:粒 子均勻地析出至母相中。若為此種組成,則可同樣地對下 一步驟之固溶化處理十產生之再結晶粒之生長進行釘扎, 從而可獲得結晶粒徑之偏差較小之整粒組成。 於第一時效處理之後進行固溶化處理。於此,一面使 第二相粒子容’一面使細微且均勻之再結晶粒成長。因 此,必須將固溶化溫度設為95(rc〜1〇5〇乞。於此,再結晶 粒先成長’其後’ HI第一時效處理中析出之第二相粒子固 溶,故可藉由釘扎效果而控制再結晶粒之成長。然而,因 於第二相粒子固溶之後釘扎效果會消失,故若長時間連續 進打固溶化處理,則再結晶粒將變大。因此,對於適當之 固溶化處理之時間而言,於95CTC以上且未滿1〇〇〇t二溫 度時為60秒〜300秒,較佳為120〜180秒;於1〇〇(rc以 上且未滿刪。(:之溫度時為3〇秒〜刚秒,較佳為的秒 〜1 2 0秒。 即使於固溶化處理後之冷卻過程中,為了避免析出第 —相粒子,材料溫度自85(rc降低至4〇(rc為止時之平均冷 16 201003674 郃速度應為15。。/s以上,較佳應為2〇。。/s以上。 ;口 /谷化處理之後實施第二時效處理。第二時效處理 之條件可為對析出物之細微化有用而慣用實施之條件,但 員左思對恤度及時間進行設定以使析出物不會粗大化。例 舉時效處理之條件之一例如下·· 35〇〜之溫度範圍i J牿,更佳為400〜500。(:之溫度範圍1〜24小時。再 =乡時效處理後之冷卻速度幾乎不會對析出物之大小造成 ;第—日守政處理前之情形時,增加析出位置,利用 析出位置來促進時效硬化,&而實現強度提昇。而於第二 :丈處理後之情形時用析出物來促進加工硬化,從而 強度提昇。亦可於第二時效處理之前及/或之後實施冷 壓延。The one-phase particles are almost eliminated, and 闵仏, WA, so that the fine second phase particles can be uniformly precipitated in a uniform size. ',', and when the temperature is too low at the time of the right first treatment, the amount of precipitation of the second phase particles which causes the pinning effect is reduced, and only the nailing effect produced by the solution treatment can be partially obtained. Therefore, the size of the crystal grains becomes different. If the aging temperature is too high, the second phase particles become coarse, 15 201003674, and since the second phase particles are precipitated unevenly, the particle size of the second phase particles The size will become uneven. Further, the longer the aging time is, the longer the second phase particles grow. Therefore, it is necessary to set an appropriate aging time. The first aging treatment is performed at 350 to 50 (TC for 1 to 24 hours, preferably at a temperature of 350 C or higher and less than 400 ° C for the first aging treatment for 12 to 24 hours, and for 40 (TC or higher and not The first aging treatment is carried out at a temperature of 45 〇t for 6 to 12 hours, and the first aging treatment is performed at a temperature of 45 (TC or more and less than 5 〇〇 ti for 3 to 6 hours), thereby making the second fine : The particles are uniformly precipitated into the matrix phase. If the composition is such a composition, the growth of the recrystallized grains produced by the solution treatment in the next step can be similarly pinned, so that the deviation of the crystal grain size can be obtained. After the first aging treatment, the solution treatment is carried out. Here, the second phase particles are allowed to grow, and the fine and uniform recrystallized grains are grown. Therefore, the solution temperature must be set to 95 (rc) ~1〇5〇乞. Here, the recrystallized grain grows first and then the second phase particles precipitated in the HI first aging treatment are solid-solved, so that the growth of the recrystallized grain can be controlled by the pinning effect. Because the pinning effect disappears after the second phase particles are solid solution, if it is long When the solid solution treatment is continued, the recrystallized grains will become larger. Therefore, the time for the appropriate solution treatment is 60 seconds to 300 seconds at a temperature above 95 CTC and less than 1 〇〇〇t. Preferably, it is 120 to 180 seconds; at 1 〇〇 (rc is above and not deleted) (: the temperature is 3 sec seconds ~ just seconds, preferably seconds ~ 1200 seconds. Even after solution treatment During the cooling process, in order to avoid precipitation of the first phase particles, the material temperature is reduced from 85 (rc to 4 〇 (the average cooling time when rc is 16 201003674 郃 speed should be 15% / s or more, preferably should be 2 〇. /s or more. After the mouth/glutination treatment, the second aging treatment is carried out. The condition of the second aging treatment may be a condition that is useful for the miniaturization of the precipitates, but the staff and the time are set so that The precipitates are not coarsened. One of the conditions for aging treatment is, for example, a temperature range i J牿 of 35 〇, more preferably 400 to 500. (: The temperature range is 1 to 24 hours. The subsequent cooling rate will hardly cause the size of the precipitate; the situation before the first day of ruling When the precipitation position is increased, the precipitation position is used to promote age hardening, and the strength is improved. In the second case, the precipitate is used to promote work hardening, thereby increasing the strength, and the second aging effect. Cold rolling is performed before and/or after the treatment.

本《明之Cu-Ni-S卜Co系、合金可加工為各種伸銅品,例 /可力工為板、條、官、棒及線,此外,本發明之Cu_Ni_Si_c〇 系銅合金可使用於導線架、連接器、接腳、端子、繼電器、 開關、二次電池用箔材等之電子零件等。 [實施例] 以下,一併表 施例係為了更進一 對本發明進行限定 示本發明之實施例與比較例,但該等實 步理解本發明及其優點而提供者,並不 於南頻炫解爐中,以130(rc將表1 (實施例)及表2 例)所揭示之成分組成之銅合㈣化,將其禱造成 尽度為3〇mm之鑄*定。其次,將該鑄旋加熱至100(TC之後, 對其進彳了錢延直至板厚為1Gmm為止,上升溫度(熱壓延 17 201003674 結束之溫度)係設為900。(:。熱壓延結束之後,將材料溫度 自8 50°C下降至400°C為止時之平均冷卻速度設為18°C/s而 進行水冷,其後放置於空氣中進行冷卻。其次,為了除去 表面之氧化銹皮而進行表面切削直至厚度為9mm為止,其 後藉由冷壓延而形成厚度為〇1 5 mm之板。繼而,以各種時 效溫度實施3〜1 2小時之第一時效處理之後’以各種固溶 化溫度下進行1 20秒之固溶化處理,其後立即將材料溫度 自850°C下降至400°C為止時之平均冷卻速度設為18。(: /s而 進行水冷,其後放置於空氣中進行冷卻。其次,將進行冷 壓延直至厚度為0.1 〇mm為止,以45〇°c並歷經3小時於惰 性環境氣氛中實施第二時效處理,最後進行冷壓延直至厚 度為0.08mm為止,從而製造出試驗片。 以下,對以上述方式獲得之各試驗片之各種特性進行 評估。 (1 )平均結晶粒徑 關於結晶粒徑,係以觀察面為平行於壓延方向之厚 方向之剖面之方式,將試料埋人至樹脂巾,利用機械^ :觀察面進行鏡面拋光之後,於相對& 100容量份之水 σ ^0令罝份之濃度為36%之鹽酸而成之溶液中,溶解重 =该溶液重量之5%之氣化鐵。將試料於以上述方式 :液中浸潰U)秒,使金屬組成出現。其次,利 鏡將上述金屬組成放大⑽倍….w之觀 ; 成-張照片’求出所有包圍各個結 針對各觀察視野而算出平均值,…觀察 18 201003674 作為平均結晶粒徑。 (2 )最大結晶粒徑—最小結晶粒徑之差之平均值 關於在求得平均結晶粒徑時所測得之結晶粒徑,係針 、母個視野而求出最大值與最小值之差,將Η處觀察視野 之千均值作為最大結晶粒徑一最小結晶粒徑之差之平均 值。 C 3 )強度 關於強度,係進行壓延平行方向之拉伸試驗,測得〇篇 之耐力(YS: MPa)。測定部位之強度之偏差為川處之最 大強度-最小強度之差,平均強度為該3()處之平均值。 (4 )導電率 關於導電率(EC . %IACS ),係藉由利用雙電橋之體 積電阻率之測定而求出。測定部位之導電率之偏差為處 之最大強度一最小強度之差,平均導電率為該如處之平均 值。 (5 )應力緩和特性 關於應力緩和特性’如圖1所示,係於加工為寬10mm X長HHhnm之厚度t=0.〇8mm之各試驗片上,以標距1為 25職,且高度…上之負荷應力為〇2%对力之嶋之方式 而決定高度,並負荷彎曲應力,對以15〇。。加熱ι〇〇〇小時 後之圖2所示之永久變形量(高度)y進行測定,算出應力 緩和率{[1- (y—yi) (mm)/(y〇syi) (mm)]xl〇〇(%)}。 再者,y!為負荷應力前之初始之翹曲高度。測定部位之應 力緩和率之偏差為30處之最大強度—最小強度之差,平均 19 201003674 應力緩和率為該30處之平均值。 (6)彎曲加工性 · 關於彎曲加工忖 / ^ ,, 係藉由幫曲部之表面粗輪产而叫 估。根據jiS H 3130 $ / τ椅度而評 —方向 進仃Badway (彎曲軸與壓延方向為同 測 Ra之 之W彎曲甙驗,利用共軛焦雷射顯微鏡對彎曲部 3面進行解析,求出JIS B _1規定之Ra ( 疋部位之彎曲粗度之偏差為3〇處之最大Ra—最/ 差’平均彎曲粗度為該30處之Ra之平均值。 20 201003674 【I丨I ΐThe "Cu-Ni-S Bu Co series and alloys of the present invention can be processed into various copper-stretching products. For example, the sheets can be used as plates, strips, posts, rods and wires. In addition, the Cu_Ni_Si_c-based copper alloy of the present invention can be used for Electronic components such as lead frames, connectors, pins, terminals, relays, switches, and foils for secondary batteries. [Embodiment] Hereinafter, the embodiments of the present invention and comparative examples are defined to further define the present invention, but the present invention and its advantages are provided by the present invention, and are not provided in the south. In the unheating furnace, the copper composition of the composition disclosed in Table 1 (Examples and Table 2) was obtained by 130 (rc), and the prayer was made into a casting having a maximum degree of 3 mm. Next, the casting spin was heated to 100 (after TC, the weight was increased until the sheet thickness was 1 Gmm, and the rising temperature (temperature at which the hot rolling 17 201003674 was completed) was set to 900. (:: hot rolling After the end, the average cooling rate when the material temperature was lowered from 850 ° C to 400 ° C was set to 18 ° C / s, and then water-cooled, and then placed in the air for cooling. Second, in order to remove the surface rust The surface was cut to a thickness of 9 mm, and then a plate having a thickness of 〇15 mm was formed by cold rolling. Then, after performing the first aging treatment for 3 to 12 hours at various aging temperatures, The solution treatment was carried out at a melting temperature for 1 20 seconds, and immediately after the temperature of the material was lowered from 850 ° C to 400 ° C, the average cooling rate was set to 18. (: / s, water-cooled, and then placed in the air. Cooling is carried out. Secondly, cold rolling is carried out until the thickness is 0.1 〇mm, and the second aging treatment is carried out in an inert atmosphere at 45 ° C for 3 hours, and finally cold rolling is performed until the thickness is 0.08 mm. Manufacturing test In the following, various characteristics of each test piece obtained in the above manner were evaluated. (1) Average crystal grain size Regarding the crystal grain size, the sample was observed to have a cross section parallel to the thickness direction of the rolling direction, and the sample was sampled. Buried to a resin towel, using a mechanical ^: observation surface for mirror polishing, in a solution of relative water volume of σ ^ 0 罝 之 36 36 36 36 = = = = = 5% by weight of gasified iron. The sample is immersed in the liquid in the above manner for U) seconds to cause the metal composition to appear. Secondly, the lens is enlarged (10) times the composition of the above metal. 'Evaluate the average value of all the surrounding nodes for each observation field, and observe 18 201003674 as the average crystal grain size. (2) The average value of the difference between the maximum crystal grain size and the minimum crystal grain size is about obtaining the average crystal grain. The crystal grain size measured at the time of the diameter is determined by the difference between the maximum value and the minimum value of the needle and the parent field, and the average value of the observed field of view is taken as the average value of the difference between the maximum crystal grain size and the minimum crystal grain size. C 3 ) Intensity off In the strength, the tensile test in the parallel direction of rolling is performed, and the endurance of the test piece (YS: MPa) is measured. The deviation of the strength of the measured portion is the difference between the maximum strength and the minimum intensity at the river, and the average strength is the 3 () (4) Conductivity The conductivity (EC.% IACS) is determined by measuring the volume resistivity of the double bridge. The deviation of the conductivity of the measurement site is the maximum intensity. The difference between the minimum strength and the average conductivity is the average value. (5) The stress relaxation property is about the stress relaxation property as shown in Fig. 1. It is processed to a width of 10 mm X length HHhnm thickness t = 0.18 mm On each test piece, the gauge length is 25, and the load stress on the height is 〇2%. The height is determined by the way of the force, and the bending stress is applied, and 15 〇 is applied. . The amount of permanent deformation (height) y shown in Fig. 2 after heating for 1 hour is measured to calculate the stress relaxation rate {[1- (y-yi) (mm) / (y〇syi) (mm)] xl 〇〇(%)}. Furthermore, y! is the initial warpage height before the load stress. The deviation of the stress relaxation rate at the measurement site is the difference between the maximum strength and the minimum strength at 30 points, and the average 19 201003674 stress relaxation rate is the average of the 30 points. (6) Bending workability · Regarding the bending process 忖 / ^ , it is estimated by the rough surface of the curved part. According to jiS H 3130 $ / τ chair degree - direction into the Badway (bending axis and rolling direction is the same as the measured W bending test, using a conjugate focal laser microscope to analyze the curved surface 3, find JIS B _1 specifies the Ra (the deviation of the bending thickness of the 疋 part is the maximum Ra at the 3 〇 - the most / the difference 'the average bending thickness is the average of the Ra of the 30. 20 201003674 [I丨I ΐ

1 彎曲粗 度偏差 〇 V*) οο ο r- d ο CN 00 ο 卜 ο ,0.74 00 ο § o CN 〇 CN 00 o 〇\ o 〇 〇 d OO o in Ό 〇 ίο o g o 00 Ό 〇 o o 1 00 寸· — CN 寸· οο 寸 σ\ CN 寸_ 00 CO 〇\ i〇 cn 一 Γη 寸 寸 m ro On ΓΊ Ό ΓΟ rn \〇 CO 寸 ΓΟ 強度 偏差 〇 Ό ΓΛ 沄 m ΓΛ (Ν m (N m On (N 00 IT) r〇 r〇 m CN m ό m 泛 OS <N P; 平均彎曲 滅 (Aim) 〇 (Ν ι〇 Ο) 丨,_·鎬 On 00 00 ΟΝ Ο) 1—^ Ο) »—< SS S oi —_H CT\ 1—^ o δ 1—H 00 On to O) 1 H O) ss 〇 rs o <N 平均應力 緩和率 (%) Ό OO 00 \〇 00 C4 ΟΝ cn ON (S On 00 OO ss v〇 00 vo OO VO OO <N ON 平均導電率 (%IACS) 吞 萃 等 沄 σ; 〇> 吞 妄 »ri 维£ 〇 00 in Ό 00 Ό 00 ο 〇\ ο ΟΝ 00 Ό Os 00 00 o m CTs CN On g 00 OO ^r> ss jn 00 o r i 〇\ o Os vn <N On W-J rN On o 〇\ 〇 〇\ 最大粒徑一 最小粒徑 (//m) 〇\ ν〇 寸 \Τ\ m 寸 呀 tn OO 寸 ΓΛ 寸 Ό 寸 vr> 平均結 晶粒徑 (//m) 00 (Ν <N οο (Ν ο m fN 〇\ Ό €N m (N 2 卜 m CN σ\ OO \〇 <N <N 00 固溶化 溫度 (°C) 〇 σ\ Ο ν〇 On ο ν〇 Os ο νη 〇\ 1000 1000 ο ν〇 Ον 〇 vr> 1000 1000 〇\ 沄 Os o i/Ί 〇\ o i〇 〇\ 1000 1000 泛 ON 泛 On 1000 1000 時效 溫度 (°C) 沄 m 〇 寸 Ο ο ι〇 ο $ ο ιη Ο 4 ο o o rn 〇 寸 o o l〇 o o in o 〇 i〇 o m 寸 o 1/Ί 組成(質量%) 其它 0.1 Mg 0.1 Mg O.lMg O.lMg O.lMg 1 O.lMg O.lMg O.lMg <N (N 〇 (M o (N o rN o CN o <N 〇 CN 〇 <N 〇 (N 〇 VD Ο o Ό ο ιη Ό Ο ι/Ί Ο ιη ν〇 ο VO ο Ό o o vo o o \〇 o' Ό 〇 o V〇 Ό 〇 vo o’ VO o VO o V~) o Vi 'O o Ο o ο Ο Ο ο ο o o o o q o o 〇 o o o S p οο 00 οο 00 οο οο οο OO OO OO OO 〇〇 OO 00 00 00 00 OO 00 00 〇 Γ*Η (N Γ〇 寸 \ο 卜 00 as ◦ y—^ <N m 寸 Ό 卜 00 On »—H 13 201003674 【z_l 彎雜 度偏差 0.82 0,70 0.79 0,0 o' IT) ^vO o' 〇 i- ,0.64 o (N o 0.77 o 1—^ Γ- o 0.76 甽 寸’ (Ν 寸· rn 寸- 寸 (N 寸 〇> m 寸 00 ΓΛ rW ΓΛ* rn 寸 m* r- r〇 m* 強度 偏差 ro m m ΓΟ <N ΓΟ (N m 0*\ (N 沄 平均彎曲 粗度 (βτη) Ο) 00 Ο) (N On 1—^ § g G\ 00 ψ·^ oo oo § ίη 〇\ § in oo ΓΛ OO F-H 平均應力 缓和率 (%) Ό ΟΟ Ό 00 £S oo £ 00 00 ss 00 SB Ό 00 OO 00 oo 00 oo 00 00 平均導電率 (%IACS ) 沄 等 等 萃 m ^ <Τ) Ο ^Τ) ΟΟ oo 〇 fN 〇\ wo r—^ o\ o ΓΟ 〇\ in (N 〇\ § OO § 00 〇 oo oo 00 00 oo 最大粒徑一 最小粒徑 (#m) 寸 寸 IT) Ό 寸 \r\ IT) 寸 寸 ir> 寸 平均結 晶粒徑 (Um) CN <Ν Os 00 oo 00 〇\ 宕 〇\ oo On oo 固溶化 溫度 (°C) ο 〇\ Ο Ον On OS 〇 to C*\ 沄 ON o 〇\ 沄 σ\ o in G\ o to o On o 〇\ 〇 »/Ί 0's 〇\ 時效 溫度 (°C): ο Ο Ο o l〇 o 〇 o o ^T) o VO o 〇 o 〇 to o 組成(質量%) 其它 0.5Sn 0.5Zn 0.1 Ag 0.5Sn 0.5Zn 0.1 Ag <N 〇 (N o CN o CN 〇 <N o (N o <N 〇 0.54 , -1 0.54 1 0.54 I -1 1 0.54 00 d 1—^ 00 d 00 o OO o 0.65 VO o iri VO o \〇 o 〇 ο Ό Ο o 〇 in W^i in iy-> 〇 o o o p z ΟΟ ΟΟ 00 00 00 00 oo oo OO 00 00 00 00 〇 Z »—I <Ν rs (Ν (N \D iN oo (N 〇\ rsj <N m 201003674 4之合金為本發明之實施例,具有適合電子材 料用之強度及導雷銮 n 等電率,且特性之偏差亦少。 、〜 7 46〜48之合金未進行第一時效處理,於固1 bending thickness deviation 〇V*) οο ο r-d ο CN 00 ο οο, 0.74 00 ο § o CN 〇CN 00 o 〇\ o 〇〇d OO o in Ό 〇ίο ogo 00 Ό 〇oo 1 00寸·— CN inch· οο inch σ\ CN inch _ 00 CO 〇\ i〇cn one Γ inch inch m ro On ΓΊ Ό ΓΟ rn \〇CO inch inch strength deviation 〇Ό 沄 ΓΛm ΓΛ (Ν m (N m On (N 00 IT) r〇r〇m CN m ό m Pan OS <NP; Average Bending (Aim) 〇(Ν ι〇Ο) 丨, _·镐On 00 00 ΟΝ Ο) 1—^ Ο) » —< SS S oi —_H CT\ 1—^ o δ 1—H 00 On to O) 1 HO) ss 〇rs o <N Average stress relaxation rate (%) Ό OO 00 \〇00 C4 ΟΝ cn ON (S On 00 OO ss v〇00 vo OO VO OO <N ON Average Conductivity (%IACS) Swallowing 沄σ; 〇> 妄 妄 »ri £ 〇00 in Ό 00 Ό 00 ο 〇 ο ΟΝ 00 Ό Os 00 00 om CTs CN On g 00 OO ^r> ss jn 00 ori 〇\ o Os vn <N On WJ rN On o 〇\ 〇〇\ Maximum particle size - Minimum particle size (//m) 〇\ ν〇 inch\Τ\ m inch 呀tn OO inch ΓΛ inch Ό inch vr> average Crystal grain size (//m) 00 (Ν <N οο (Ν ο m fN 〇\ Ό €N m (N 2 卜m CN σ\ OO \〇<N <N 00 solution temperature (°C 〇σ\ Ο ν〇On ο ν〇Os ο νη 〇\ 1000 1000 ο ν〇Ον 〇vr> 1000 1000 〇\ 沄Os oi/Ί 〇\ oi〇〇\ 1000 1000 Pan ON On Pan 1000 1000 aging temperature (°C) 沄m 〇 inch Ο ο ι〇ο $ ο ιη Ο 4 ο oo rn 〇 inch ool〇oo in o 〇i〇om inch o 1/Ί composition (mass%) Other 0.1 Mg 0.1 Mg O.lMg O.lMg O.lMg 1 O.lMg O.lMg O.lMg <N (N 〇(M o (N o rN o CN o <N 〇CN 〇<N 〇(N 〇VD Ο o Ό ο Ιη Ό Ο ι/Ί Ο ιη ν〇ο VO ο Ό oo vo oo \〇o' Ό 〇o V〇Ό 〇vo o' VO o VO o V~) o Vi 'O o Ο o ο Ο Ο ο ο Oooooqoo 〇ooo S p οο 00 οο 00 οο οο οο OO OO OO OO 〇〇OO 00 00 00 00 00 00 00 00 〇Γ*Η (N Γ〇 inch ο 00 00 as ◦ y ^ & N N N N N N N N 00 On »—H 13 201003674 [z_l bending deviation 0.82 0,70 0.79 0,0 o' IT) ^vO o' I- , 0.64 o (N o 0.77 o 1—^ Γ- o 0.76 甽 inch' (Ν inch·rn inch-inch (N inch 〇> m inch 00 ΓΛ rW ΓΛ* rn inch m* r- r〇m * Strength deviation ro mm ΓΟ <N ΓΟ (N m 0*\ (N 沄 average bending thickness (βτη) Ο) 00 Ο) (N On 1—^ § g G\ 00 ψ·^ oo oo § ίη 〇 \ § in oo ΓΛ OO FH Average stress relaxation rate (%) Ό ΟΟ Ό 00 £S oo £ 00 00 ss 00 SB Ό 00 OO 00 oo 00 oo 00 00 Average conductivity (%IACS) 沄, etc. m ^ &lt ;Τ) Ο ^Τ) ΟΟ oo 〇fN 〇\ wo r—^ o\ o ΓΟ 〇\ in (N 〇\ § OO § 00 〇oo oo 00 00 oo Maximum particle size - minimum particle size (#m) IT) 寸 inch \r\ IT) inch ir> inch average crystal grain size (Um) CN <Ν Os 00 oo 00 〇\ 宕〇\ oo On oo Solution temperature (°C) ο 〇\ Ο Ον On OS 〇to C*\ 沄ON o 〇\ 沄σ\ o in G\ o to o On o 〇\ 〇»/Ί 0's 〇\ aging temperature (°C): ο Ο Ο ol〇o 〇oo ^T) o VO o 〇o 〇to o Composition (% by mass) Other 0.5Sn 0.5Zn 0.1 Ag 0.5Sn 0.5Zn 0.1 Ag <N 〇(N o CN o CN 〇<N o (N o <N 〇0.54 , -1 0.54 1 0.54 I -1 1 0.54 00 d 1—^ 00 d 00 o OO o 0.65 VO o iri VO o \〇 o 〇ο Ό Ο o 〇in W^i in iy-> 〇ooopz ΟΟ 00 00 00 00 00 oo oo OO 00 00 00 00 〇Z »—I <Ν rs (Ν (N \D iN oo (N The alloy of 〇\rsj <N m 201003674 4 is an embodiment of the present invention, and has an electric power suitable for an electronic material and an electric conductivity of a thunder, and has a small variation in characteristics. , ~ 7 46~48 alloy is not subjected to the first aging treatment, Yugu

溶化處理時’結晶粒徑變粗大而導致強度及彎曲加工性劣化。 士關於Νο·38、39、42、44、49、50之合金,由於第一 寸效處理之%效溫度過低,第二相粒子較少,目此於固溶 化處理時’結晶粒徑變粗大而導致強度及彎油加工性劣 化。又,結晶粒徑之偏差變多。其結果,特性之偏差變大。 關於No. 40、41、43、45、51〜54之合金,由於第一 時效處理之時效溫度過高,第二相粒子不均勻地成長,因 此結晶粒徑不均。其結果,特性之偏差變大。 關於No.55及56,由於Co之添加量過多,因此強度及 導電率劣化。 Νο·57〜60未進行第一時效處理,固溶化溫度較低。第 〜相粒子未充分地固溶’又,結晶粒過小,因而強度及應 力緩和特性劣化。 【圖式簡單說明】 圖1係應力缓和試驗法之說明圖。 圖2係關於應力緩和試驗法之永久變形量之說明圖。 【主要元件符號說明】 1 標距 t 厚度 23 201003674 y 永久變形量(高度) y〇 局度 24At the time of the melting treatment, the crystal grain size becomes coarse, and the strength and the bending workability are deteriorated. Regarding the alloys of Νο·38, 39, 42, 44, 49, 50, since the first effect temperature of the first effect treatment is too low, the second phase particles are less, so that the crystal grain size changes during solution treatment. The coarseness causes deterioration in strength and bending processability. Moreover, the variation in crystal grain size increases. As a result, the variation in characteristics becomes large. In the alloys of Nos. 40, 41, 43, 45, and 51 to 54, since the aging temperature of the first aging treatment was too high, the second phase particles were unevenly grown, and thus the crystal grain size was uneven. As a result, the variation in characteristics becomes large. Regarding No. 55 and 56, since the addition amount of Co is too large, the strength and electrical conductivity are deteriorated. Νο·57~60 was not subjected to the first aging treatment, and the solution heat temperature was low. The first phase particles are not sufficiently solid-solved. Further, since the crystal grains are too small, the strength and stress relaxation characteristics are deteriorated. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory diagram of a stress relaxation test method. Fig. 2 is an explanatory diagram of the amount of permanent deformation of the stress relaxation test method. [Explanation of main component symbols] 1 gauge length t thickness 23 201003674 y permanent deformation (height) y〇 degree 24

Claims (1)

201003674 七、申請專利範圍: '丨主電τ材枓用銅合金 二?.〇〜2.5 質量%、co: 〇.5〜2·5 質量%、& 〇 3、 貝豆置% ’剩餘部分由CU及不可避免之雜質所構成; 其平均結晶粒徑$ 15〜30/zm,每觀察視野〇 5職2之 最大結晶粒徑與最小結晶粒徑之差之平均值為下 2.如申請專利範圍第丨項之電子材料用銅合金,其中 一步含有最多〇·5質量%之Cr。201003674 VII. Patent application scope: '丨The main electric power is made of copper alloy II? 〇~2.5 mass%, co: 〇.5~2·5 mass%, & 〇3, peas set% 'The remainder is composed of CU and unavoidable impurities; its average crystal grain size is $15~30 /zm, the average value of the difference between the maximum crystal grain size and the minimum crystal grain size of each of the observation fields 〇5 job 2 is as follows. 2. The copper alloy for electronic materials according to the scope of the patent application, wherein one step contains the most 〇·5 Mass % of Cr. 、3·如申請專利範圍第1或2項之電子材料用銅合金,其 中進一步含有合計為0〜〇·5質量%之選自Mg、Mn、Ag: P之1種或2種以上。 如申叫專利範圍第丨〜3項中任一項之電子材料用鋼 合金,其中進一步含有合計為〇〜2.0質量%之選自“及以 之1種或2種。 5·如申請專利範圍第1〜4項中任-項之電子材料用銅 合金’其巾進一步含有合計為〇〜2.0質#%之選自As、Sb、 Be、B、Τι、Zr、A1及Fe之1種或2種以上。 6· —種銅合金之製造方法,係用以製造申請專利範圍第 1〜5項中任一項之電子材料用銅合金,其包括依序進行以 下步驟: / 1 ’對具有所需組成之鑄錠進行熔解鑄造; 步驟2,以95(rc〜1050°C加熱1小時之後進行熱壓 延,將熱壓延結束時之溫度設為85(rc以上,將自850它至 400 C之平均冷卻速度設為i5;t/s以上而進行冷卻; 25 201003674 步驟3,進行加工度為8 5 %以上之冷壓延; 步驟4 ’進行以3 50〜500°C加熱i〜24小時之時效處 步驟5,以950°C〜1050°C進行固溶化處理,將材料溫 度自85CTC下降至40(TC之平均冷卻速度設為irc/s以上而 進行冷卻; 步驟7,進行時效處理;以及 步驟8,進行隨意之冷壓延。 項之7電::銅品,其具備申請專利範圍第1〜5項中任-貝之電子材料用銅合金。 8·一種電子機器 中任一項之雷2 其具備申請專利範圍第1〜5項 頁之電子材料用銅合金。 八、圖式: (如次頁) 263. The copper alloy for an electronic material according to the first or second aspect of the invention, which further comprises a total of 0 to 5% by mass of one or more selected from the group consisting of Mg, Mn and Ag: P. The steel alloy for electronic materials according to any one of the above-mentioned claims, wherein the total amount is 〇2.0% by mass selected from "and one or two kinds." The copper alloy for electronic materials of any one of items 1 to 4, wherein the towel further contains one selected from the group consisting of As, Sb, Be, B, Τι, Zr, A1, and Fe, or a total of 〇~2.0 mass#% or The method for producing a copper alloy is the copper alloy for electronic materials according to any one of claims 1 to 5, which comprises the following steps: / 1 ' The ingot of the desired composition is subjected to melt casting; in step 2, heat is rolled at 95 (rc~1050 °C for 1 hour), and the temperature at the end of hot rolling is set to 85 (rc or more, which will be from 850 to The average cooling rate of 400 C is set to i5; cooling is performed above t/s; 25 201003674 Step 3, cold rolling with a working degree of 85% or more; Step 4 'heating at 3 50~500 °C i~24 The aging time of the step is 5, solid solution treatment at 950 ° C ~ 1050 ° C, the material temperature is lowered from 85 CTC to 4 0 (the average cooling rate of TC is set to irc/s or more for cooling; step 7, aging treatment; and step 8, for random cold rolling. Item 7: Copper, which has the patent application scope 1 ~5 items of the copper alloy for the electronic material of Beibei. 8. A mine of any one of the electronic devices. It has a copper alloy for electronic materials in the first to fifth pages of the patent application. VIII. As the next page) 26
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