TWI293362B - A sensor - Google Patents

A sensor Download PDF

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Publication number
TWI293362B
TWI293362B TW095102059A TW95102059A TWI293362B TW I293362 B TWI293362 B TW I293362B TW 095102059 A TW095102059 A TW 095102059A TW 95102059 A TW95102059 A TW 95102059A TW I293362 B TWI293362 B TW I293362B
Authority
TW
Taiwan
Prior art keywords
top cover
substrate
sensor
inductor
optical
Prior art date
Application number
TW095102059A
Other languages
English (en)
Chinese (zh)
Other versions
TW200639378A (en
Inventor
Eamon Hynes
Edward John Coyne
William A Lane
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Publication of TW200639378A publication Critical patent/TW200639378A/zh
Application granted granted Critical
Publication of TWI293362B publication Critical patent/TWI293362B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • G01J1/04Optical or mechanical part supplementary adjustable parts
    • G01J1/0407Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0411Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using focussing or collimating elements, i.e. lenses or mirrors; Aberration correction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/0225Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024Special manufacturing steps or sacrificial layers or layer structures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/04Casings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/04Casings
    • G01J5/041Mountings in enclosures or in a particular environment
    • G01J5/045Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/05Means for preventing contamination of the components of the optical system; Means for preventing obstruction of the radiation path
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0801Means for wavelength selection or discrimination
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0806Focusing or collimating elements, e.g. lenses or concave mirrors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0846Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02Constructional details
    • G01J5/08Optical arrangements
    • G01J5/0879Optical elements not provided otherwise, e.g. optical manifolds, holograms, cubic beamsplitters, non-dispersive prisms or particular coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/407Optical elements or arrangements indirectly associated with the devices

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measurement Of Radiation (AREA)
TW095102059A 2005-01-26 2006-01-19 A sensor TWI293362B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/045,910 US7326932B2 (en) 2005-01-26 2005-01-26 Sensor and cap arrangement

Publications (2)

Publication Number Publication Date
TW200639378A TW200639378A (en) 2006-11-16
TWI293362B true TWI293362B (en) 2008-02-11

Family

ID=36092860

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095102059A TWI293362B (en) 2005-01-26 2006-01-19 A sensor

Country Status (6)

Country Link
US (1) US7326932B2 (https=)
EP (1) EP1842040B1 (https=)
JP (2) JP2008528987A (https=)
CN (1) CN101107500B (https=)
TW (1) TWI293362B (https=)
WO (1) WO2006079588A1 (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112005002762T5 (de) 2004-11-12 2007-08-30 Analog Devices Inc., Norwood Beabstandete, mit Kontakthöckern versehene Komponenten-Struktur
US7326932B2 (en) * 2005-01-26 2008-02-05 Analog Devices, Inc. Sensor and cap arrangement
US7435964B2 (en) * 2005-01-26 2008-10-14 Analog Devices, Inc. Thermal sensor with increased sensitivity
US7807972B2 (en) * 2005-01-26 2010-10-05 Analog Devices, Inc. Radiation sensor with cap and optical elements
US7718967B2 (en) * 2005-01-26 2010-05-18 Analog Devices, Inc. Die temperature sensors
US7692148B2 (en) 2005-01-26 2010-04-06 Analog Devices, Inc. Thermal sensor with thermal barrier
US8487260B2 (en) * 2005-01-26 2013-07-16 Analog Devices, Inc. Sensor
US8476591B2 (en) 2005-09-21 2013-07-02 Analog Devices, Inc. Radiation sensor device and method
US7897920B2 (en) 2005-09-21 2011-03-01 Analog Devices, Inc. Radiation sensor device and method
US7986027B2 (en) * 2006-10-20 2011-07-26 Analog Devices, Inc. Encapsulated metal resistor
US8766186B2 (en) * 2006-12-27 2014-07-01 Analog Devices, Inc. Control aperture for an IR sensor
US8523427B2 (en) 2008-02-27 2013-09-03 Analog Devices, Inc. Sensor device with improved sensitivity to temperature variation in a semiconductor substrate
WO2009129198A1 (en) * 2008-04-15 2009-10-22 Analog Devices, Inc. Wafer level csp sensor
FR2936868B1 (fr) * 2008-10-07 2011-02-18 Ulis Detecteur thermique a micro-encapsulation.
US8390083B2 (en) 2009-09-04 2013-03-05 Analog Devices, Inc. System with recessed sensing or processing elements
US9407997B2 (en) 2010-10-12 2016-08-02 Invensense, Inc. Microphone package with embedded ASIC
FR2985576B1 (fr) * 2012-01-05 2014-10-17 Ulis Detecteur infrarouge comportant un boitier integrant au moins un reseau de diffraction
JP6100882B2 (ja) * 2012-03-20 2017-03-22 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、センサ及び方法
US9823115B2 (en) 2012-07-12 2017-11-21 Pixart Imaging Inc. Packaged optical device having a specular reflection configuration
JP6339669B2 (ja) 2013-07-08 2018-06-06 モーション・エンジン・インコーポレーテッド Memsデバイスおよび製造する方法
US10273147B2 (en) 2013-07-08 2019-04-30 Motion Engine Inc. MEMS components and method of wafer-level manufacturing thereof
WO2015013827A1 (en) 2013-08-02 2015-02-05 Motion Engine Inc. Mems motion sensor for sub-resonance angular rate sensing
CN105190264A (zh) * 2013-09-18 2015-12-23 上海巨哥电子科技有限公司 一种封装非制冷焦平面阵列的方法与焦平面阵列装置
CN104576883B (zh) 2013-10-29 2018-11-16 普因特工程有限公司 芯片安装用阵列基板及其制造方法
WO2015103688A1 (en) 2014-01-09 2015-07-16 Motion Engine Inc. Integrated mems system
JP6167926B2 (ja) * 2014-02-11 2017-07-26 株式会社デンソー 赤外線検出装置
US20170030788A1 (en) 2014-04-10 2017-02-02 Motion Engine Inc. Mems pressure sensor
US11674803B2 (en) 2014-06-02 2023-06-13 Motion Engine, Inc. Multi-mass MEMS motion sensor
US10231629B1 (en) * 2014-08-25 2019-03-19 Maxim Integrated Products, Inc. Mobile integrated electrode multifunction sensor and method
US11287486B2 (en) 2014-12-09 2022-03-29 Motion Engine, Inc. 3D MEMS magnetometer and associated methods
WO2016112463A1 (en) 2015-01-15 2016-07-21 Motion Engine Inc. 3d mems device with hermetic cavity
US9666558B2 (en) 2015-06-29 2017-05-30 Point Engineering Co., Ltd. Substrate for mounting a chip and chip package using the substrate
DE102015217290A1 (de) * 2015-09-10 2017-03-16 Robert Bosch Gmbh Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung
DE102016209798A1 (de) * 2016-06-03 2017-12-07 Robert Bosch Gmbh Mikroelektronische Sensorvorrichtung und Verfahren zum Herstellen einer mikroelektronischen Sensorvorrichtung
US10976196B2 (en) * 2017-03-15 2021-04-13 Asml Netherlands B.V. Sensor mark and a method of manufacturing a sensor mark
DE102017206385A1 (de) * 2017-04-13 2018-10-18 Robert Bosch Gmbh Verfahren zum Schutz einer MEMS-Einheit vor Infrarot-Untersuchungen sowie MEMS-Einheit
EP3511697B1 (de) 2018-01-12 2023-07-12 Drägerwerk AG & Co. KGaA Anordnung und verfahren zur analyse eines fluids
JP7292077B2 (ja) * 2018-07-11 2023-06-16 三菱電機株式会社 パッケージ素子の製造方法およびパッケージ素子
DE102019119502A1 (de) * 2019-07-18 2021-01-21 Hamilton Medical Ag Nichtdispersive Mehrkanal-Sensorbaugruppe mit refraktivem oder/und diffraktivem Strahlenteiler

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131525A (ja) * 1982-01-31 1983-08-05 Matsushita Electric Works Ltd 赤外線検出装置
US7415126B2 (en) * 1992-05-05 2008-08-19 Automotive Technologies International Inc. Occupant sensing system
US4994664A (en) * 1989-03-27 1991-02-19 Massachusetts Institute Of Technology Optically coupled focal plane arrays using lenslets and multiplexers
JPH0821703B2 (ja) * 1990-07-17 1996-03-04 株式会社東芝 固体撮像素子
US5528038A (en) * 1991-05-07 1996-06-18 Matsushita Electric Industrial Co., Ltd. Temperature distribution measurement apparatus and its application to a human body detecting system
KR970010976B1 (ko) * 1993-12-31 1997-07-05 엘지전자 주식회사 적외선 어레이센서 장치
US5550373A (en) * 1994-12-30 1996-08-27 Honeywell Inc. Fabry-Perot micro filter-detector
US5650624A (en) * 1995-04-13 1997-07-22 Engelhard Sensor Technologies, Inc. Passive infrared analysis gas sensor
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
GB2310952B (en) * 1996-03-05 1998-08-19 Mitsubishi Electric Corp Infrared detector
US5701008A (en) * 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package
JP3366590B2 (ja) * 1998-02-04 2003-01-14 科学技術振興事業団 温度測定装置、熱型赤外線イメージセンサ及び温度測定方法
JP3580126B2 (ja) * 1998-03-12 2004-10-20 オムロン株式会社 赤外線センサ
JP2000019015A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 赤外線検出装置
US6252229B1 (en) * 1998-07-10 2001-06-26 Boeing North American, Inc. Sealed-cavity microstructure and microbolometer and associated fabrication methods
EP1077386A4 (en) * 1999-03-03 2005-11-30 Mitsubishi Electric Corp INFRARED OPTICAL SYSTEM FOR INFRARED CAMERA
CA2300400A1 (en) * 1999-03-22 2000-09-22 Michael George Taranowski Electronic optical target ranging and imaging
JP3573040B2 (ja) * 1999-05-07 2004-10-06 三菱電機株式会社 赤外線カメラ及び赤外線カメラシステム
US6222454B1 (en) * 1999-07-01 2001-04-24 Goal Electronics Inc. Non-contacting temperature sensing device
JP2001326367A (ja) * 2000-05-12 2001-11-22 Denso Corp センサおよびその製造方法
JP2001349787A (ja) * 2000-06-06 2001-12-21 Seiko Epson Corp 赤外線検出素子および測温計
WO2002056251A1 (en) * 2000-12-27 2002-07-18 Mitsubishi Denki Kabushiki Kaisha Image processing device and elevator mounting it thereon
JP2002243908A (ja) * 2001-02-13 2002-08-28 Minolta Co Ltd 赤外線用光学素子および赤外線カメラ
FR2822541B1 (fr) * 2001-03-21 2003-10-03 Commissariat Energie Atomique Procedes et dispositifs de fabrication de detecteurs de rayonnement
US6890834B2 (en) * 2001-06-11 2005-05-10 Matsushita Electric Industrial Co., Ltd. Electronic device and method for manufacturing the same
JP3519720B2 (ja) * 2001-06-11 2004-04-19 松下電器産業株式会社 電子デバイス
US6893574B2 (en) * 2001-10-23 2005-05-17 Analog Devices Inc MEMS capping method and apparatus
JP2005019966A (ja) * 2003-06-06 2005-01-20 Sanyo Electric Co Ltd 半導体装置及びその製造方法
DE102004034066B4 (de) 2004-07-15 2012-10-31 Bayerische Motoren Werke Aktiengesellschaft Vorrichtung zur Steuerung der Kühlung einer Brennkraftmaschine für Kraftfahrzeuge
US7326932B2 (en) * 2005-01-26 2008-02-05 Analog Devices, Inc. Sensor and cap arrangement

Also Published As

Publication number Publication date
EP1842040A1 (en) 2007-10-10
US20060163453A1 (en) 2006-07-27
CN101107500A (zh) 2008-01-16
CN101107500B (zh) 2013-07-24
JP2013083669A (ja) 2013-05-09
TW200639378A (en) 2006-11-16
US7326932B2 (en) 2008-02-05
EP1842040B1 (en) 2016-09-14
JP2008528987A (ja) 2008-07-31
WO2006079588A1 (en) 2006-08-03

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MM4A Annulment or lapse of patent due to non-payment of fees