JP2013083669A - センサ - Google Patents
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- JP2013083669A JP2013083669A JP2013006435A JP2013006435A JP2013083669A JP 2013083669 A JP2013083669 A JP 2013083669A JP 2013006435 A JP2013006435 A JP 2013006435A JP 2013006435 A JP2013006435 A JP 2013006435A JP 2013083669 A JP2013083669 A JP 2013083669A
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- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000003566 sealing material Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 25
- 238000000034 method Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0411—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using focussing or collimating elements, i.e. lenses or mirrors; Aberration correction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0803—Arrangements for time-dependent attenuation of radiation signals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Measurement Of Radiation (AREA)
Abstract
【解決手段】本発明は、第1の基板に形成されたセンサ素子と第2の基板に形成された少なくとも1つの光学素子とを提供するものであって、第2の基板が少なくとも1つのセンサ素子の上を覆うキャップを形成するように第1および第2の基板が互いに関連するように配置されていて、少なくとも1つの光学素子がキャップ上にくる入射光を少なくとも1つのセンサ素子に導くように構成されている。
【選択図】図1
Description
105 センサデバイス
110 シリコンウェーファ
115 キャップ
120 パターン
140 外部表面
145 空洞
700 パッケージ
701 第2のレンズ
Claims (10)
- 第1の基板の中に形成された少なくとも1つのセンサ素子と、
第2の基板上に形成されることによって、シリコンの中に実装された少なくとも1つの光学素子とを備え、
前記第1基板および前記第2の基板は、前記第2の基板が前記少なくとも1つのセンサ素子上にキャップを形成するように互いに関係して構成され、前記キャップの内側表面または外側表面上に反射防止被覆が備えられており、前記キャップは垂直側壁を有し、前記少なくとも1つの光学素子は前記キャップ内に形成されており、前記キャップが、周囲圧力よりも低い圧力を有する前記少なくとも1つのセンサ素子周りのシールされた空洞を区画するように、前記側壁の底部に備えられたシール材料を使用して前記側壁が前記第1の基板に真空状態下で接合されて、前記シールされた空洞は前記キャップおよび前記少なくとも1つのセンサ素子によって共有されており、前記少なくとも1つの光学素子は前記キャップ上の入射放射を下方に位置している前記少なくとも1つのセンサ素子の少なくとも1つへ集光すること
を特徴とするセンサ。 - 前記少なくとも1つのセンサ素子は、赤外センサ素子であることを特徴とする請求項1に記載のセンサ。
- 前記少なくとも1つの光学素子は、振幅変調または位相変調を実行するよう構成された回折光学素子であることを特徴とする請求項1に記載のセンサ。
- 前記空洞は、センサが利用されるべき応用形態に適合するように選択された気体の成分が導入されていることを特徴とする請求項1に記載のセンサ。
- 前記組成の気体は、窒素の熱伝導率よりも低い熱伝導率を持つ気体を含むことを特徴とする請求項4に記載のセンサ。
- 前記少なくとも1つの光学素子は、前記空洞に隣接する、前記キャップの内部表面に形成されることを特徴とする請求項1に記載のセンサ。
- 前記少なくとも1つの光学素子は、前記空洞から離れた、前記キャップの外部表面に形成されることを特徴とする請求項1に記載のセンサ。
- 光学素子が、前記空洞から離れた前記キャップの外部表面および前記空洞に隣接する前記キャップの内部表面に形成されていて、前記空洞に隣接する位置および離れた位置にある前記光学素子の組み合わせが複合レンズを形成することを特徴とする請求項1に記載のセンサ。
- 複数のセンサ素子が形成され、前記光学素子が特定の波長の放射を複数のセンサ素子のうちあらかじめ選択されたセンサ素子に選択的に導くように構成されていることを特徴とする請求項1に記載のセンサ。
- 前記センサは第2のキャップを備えており、前記第2のキャップが前記第1のキャップの上に配置されていて、前記第2のキャップは光学素子を含み、前記第1のキャップの光学素子および前記第2のキャップの光学素子が複合レンズとなるように構成されていることを特徴とする請求項1に記載のセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/045,910 | 2005-01-26 | ||
US11/045,910 US7326932B2 (en) | 2005-01-26 | 2005-01-26 | Sensor and cap arrangement |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007552618A Division JP2008528987A (ja) | 2005-01-26 | 2006-01-12 | センサ |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013083669A true JP2013083669A (ja) | 2013-05-09 |
Family
ID=36092860
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007552618A Pending JP2008528987A (ja) | 2005-01-26 | 2006-01-12 | センサ |
JP2013006435A Pending JP2013083669A (ja) | 2005-01-26 | 2013-01-17 | センサ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007552618A Pending JP2008528987A (ja) | 2005-01-26 | 2006-01-12 | センサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7326932B2 (ja) |
EP (1) | EP1842040B1 (ja) |
JP (2) | JP2008528987A (ja) |
CN (1) | CN101107500B (ja) |
TW (1) | TWI293362B (ja) |
WO (1) | WO2006079588A1 (ja) |
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TWI293362B (en) | 2008-02-11 |
US7326932B2 (en) | 2008-02-05 |
CN101107500B (zh) | 2013-07-24 |
TW200639378A (en) | 2006-11-16 |
EP1842040B1 (en) | 2016-09-14 |
JP2008528987A (ja) | 2008-07-31 |
CN101107500A (zh) | 2008-01-16 |
WO2006079588A1 (en) | 2006-08-03 |
US20060163453A1 (en) | 2006-07-27 |
EP1842040A1 (en) | 2007-10-10 |
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