TWI274923B - Parabolic waveguide-type collimating lens and tunable external cavity laser diode provided with the same - Google Patents
Parabolic waveguide-type collimating lens and tunable external cavity laser diode provided with the same Download PDFInfo
- Publication number
- TWI274923B TWI274923B TW094142777A TW94142777A TWI274923B TW I274923 B TWI274923 B TW I274923B TW 094142777 A TW094142777 A TW 094142777A TW 94142777 A TW94142777 A TW 94142777A TW I274923 B TWI274923 B TW I274923B
- Authority
- TW
- Taiwan
- Prior art keywords
- waveguide
- parabolic
- laser diode
- collimating lens
- cavity laser
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/086—One or more reflectors having variable properties or positions for initial adjustment of the resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12102—Lens
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050046155A KR100701006B1 (ko) | 2005-05-31 | 2005-05-31 | 포물선 도파로형 평행광 렌즈 및 이를 포함한 파장 가변외부 공진 레이저 다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200641423A TW200641423A (en) | 2006-12-01 |
TWI274923B true TWI274923B (en) | 2007-03-01 |
Family
ID=35840110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094142777A TWI274923B (en) | 2005-05-31 | 2005-12-05 | Parabolic waveguide-type collimating lens and tunable external cavity laser diode provided with the same |
Country Status (8)
Country | Link |
---|---|
US (2) | US7174068B2 (ja) |
EP (1) | EP1729382B1 (ja) |
JP (1) | JP2006339622A (ja) |
KR (1) | KR100701006B1 (ja) |
CN (1) | CN1874093B (ja) |
AT (1) | ATE504965T1 (ja) |
DE (1) | DE602005027332D1 (ja) |
TW (1) | TWI274923B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI760448B (zh) * | 2017-03-06 | 2022-04-11 | 中國大陸商深圳源光科技有限公司 | 用於激光雷達光源之儀器及用於激光掃描的系統 |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9018561B2 (en) * | 2007-05-23 | 2015-04-28 | Cymer, Llc | High power seed/amplifier laser system with beam shaping intermediate the seed and amplifier |
JP5211697B2 (ja) * | 2008-01-07 | 2013-06-12 | セイコーエプソン株式会社 | 照明装置、画像表示装置及びプロジェクタ |
KR100989850B1 (ko) * | 2008-07-16 | 2010-10-29 | 한국전자통신연구원 | 도파로 렌즈를 구비하는 반도체 레이저 |
WO2010035194A1 (en) * | 2008-09-25 | 2010-04-01 | Koninklijke Philips Electronics N.V. | Illumination system, luminaire, collimator, and display device |
US8897329B2 (en) * | 2010-09-20 | 2014-11-25 | Corning Incorporated | Group III nitride-based green-laser diodes and waveguide structures thereof |
JP5266344B2 (ja) * | 2011-01-05 | 2013-08-21 | 日本電信電話株式会社 | 偏向光源 |
JP5357195B2 (ja) * | 2011-01-21 | 2013-12-04 | 日本電信電話株式会社 | 波長可変光源 |
US9008142B2 (en) * | 2011-07-22 | 2015-04-14 | Insight Photonic Solutions, Inc. | System and method for optimization of coherence length of tunable laser sources |
US20150168650A1 (en) * | 2012-06-13 | 2015-06-18 | Siphx Corporation | Thin film filter (tff) embedded waveguide wdm device employing parabola-shaped waveguides |
US20130343704A1 (en) * | 2012-06-26 | 2013-12-26 | Acacia Communications Inc. | Compact mode-size transition using a focusing reflector |
US9091827B2 (en) | 2012-07-09 | 2015-07-28 | Luxtera, Inc. | Method and system for grating couplers incorporating perturbed waveguides |
TW201408923A (zh) * | 2012-08-30 | 2014-03-01 | Walsin Lihwa Corp | 雷射發光裝置 |
US10782479B2 (en) * | 2013-07-08 | 2020-09-22 | Luxtera Llc | Method and system for mode converters for grating couplers |
US9250388B1 (en) * | 2014-07-17 | 2016-02-02 | Intel Corporation | Optical device using echelle grating that provides total internal reflection of light |
US11466316B2 (en) | 2015-05-20 | 2022-10-11 | Quantum-Si Incorporated | Pulsed laser and bioanalytic system |
US10605730B2 (en) * | 2015-05-20 | 2020-03-31 | Quantum-Si Incorporated | Optical sources for fluorescent lifetime analysis |
KR102516593B1 (ko) * | 2015-05-20 | 2023-04-03 | 퀀텀-에스아이 인코포레이티드 | 형광 수명 분석을 위한 광학 소스들 |
IL261148B2 (en) * | 2016-02-26 | 2023-12-01 | Magic Leap Inc | Light output system with reflector and lenses for high spatially uniform light output |
KR101817853B1 (ko) * | 2016-04-08 | 2018-02-22 | 한국표준과학연구원 | 회전 반사미러를 이용한 파장가변 레이저 공진기 및 그 공진기를 이용한 파장가변 공진방법 |
US20170371110A1 (en) * | 2016-06-23 | 2017-12-28 | Futurewei Technologies, Inc. | Optical Transceiver With a Mirrored Submount and a Laser Diode for Laser-to-Fiber Coupling |
CA3047133A1 (en) | 2016-12-16 | 2018-06-21 | Quantum-Si Incorporated | Compact mode-locked laser module |
EP3555691A1 (en) | 2016-12-16 | 2019-10-23 | Quantum-Si Incorporated | Compact beam shaping and steering assembly |
US10197737B2 (en) | 2017-06-19 | 2019-02-05 | Intel Corporation | Low back reflection echelle grating |
KR102650065B1 (ko) * | 2018-04-03 | 2024-03-22 | 한국전자통신연구원 | 파장가변 광원 |
EP3807622A1 (en) | 2018-06-15 | 2021-04-21 | Quantum-Si Incorporated | Data acquisition control for advanced analytic instruments having pulsed optical sources |
CN109597162B (zh) * | 2018-12-27 | 2021-04-09 | 华为技术有限公司 | 平面光波导、plc芯片、光束整形结构及wss |
DE102019102499A1 (de) * | 2019-01-31 | 2020-08-06 | Forschungsverbund Berlin E.V. | Vorrichtung zur Erzeugung von Laserstrahlung |
JPWO2020166515A1 (ja) * | 2019-02-14 | 2021-12-09 | 古河電気工業株式会社 | 半導体光集積素子 |
CN114127582A (zh) * | 2019-03-29 | 2022-03-01 | 沃扬光电公司 | 片上反射镜波束成形 |
JP2022537277A (ja) | 2019-06-14 | 2022-08-25 | クアンタム-エスアイ インコーポレイテッド | 改善されたビームアラインメント感度を有するスライス格子カプラ |
US11604352B2 (en) | 2020-07-29 | 2023-03-14 | Meta Platforms Technologies LLC | Waveguide-based projector |
CN116075993A (zh) * | 2020-08-14 | 2023-05-05 | 安捷伦科技有限公司 | 用于成角度小平面激光器件的自由形状准直透镜 |
TWI782350B (zh) * | 2020-11-03 | 2022-11-01 | 國立中山大學 | 光模態轉換裝置及其製造方法 |
GB202107231D0 (en) * | 2021-05-20 | 2021-07-07 | Ams Int Ag | Eye tracking |
CN113571859B (zh) * | 2021-07-23 | 2022-05-13 | 北京邮电大学 | 一种基于腔体耦合的微带线-微带线垂直过渡结构 |
CN116316060A (zh) * | 2023-03-09 | 2023-06-23 | 南京理工大学 | 基于长轴偏振弯曲增益波导的外腔调谐激光器及耦合方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217561A (en) * | 1978-06-26 | 1980-08-12 | Xerox Corporation | Beam scanning using radiation pattern distortion |
JPS5727086A (en) | 1980-07-25 | 1982-02-13 | Toshiba Corp | Wavelength controlled laser wherein wave guide and grating lens are applied |
JPS61221706A (ja) * | 1985-03-27 | 1986-10-02 | Nec Corp | 平面光回路 |
FR2595013B1 (fr) | 1986-02-24 | 1989-06-02 | Favre Francois | Source lumineuse continument accordable |
US5146248A (en) * | 1987-12-23 | 1992-09-08 | North American Philips Corporation | Light valve projection system with improved illumination |
US4896325A (en) * | 1988-08-23 | 1990-01-23 | The Regents Of The University Of California | Multi-section tunable laser with differing multi-element mirrors |
JPH03296003A (ja) * | 1990-04-16 | 1991-12-26 | Ricoh Co Ltd | 光学装置及びその製造方法 |
JPH04133485A (ja) * | 1990-09-26 | 1992-05-07 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
US5560700A (en) * | 1992-01-31 | 1996-10-01 | Massachusetts Institute Of Technology | Light coupler |
JPH0637402A (ja) * | 1992-07-20 | 1994-02-10 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザ光反射素子 |
JPH06283810A (ja) * | 1993-03-29 | 1994-10-07 | Toshiba Corp | 半導体レーザ装置およびその製造方法 |
US5568577A (en) | 1994-12-13 | 1996-10-22 | Hughes Electronics | Method and apparatus for concentrating the energy of laser diode beams |
JPH0945981A (ja) * | 1995-07-28 | 1997-02-14 | Mitsubishi Cable Ind Ltd | レーザ光の波長制御方法及びそのレーザ |
JP2947142B2 (ja) * | 1995-09-21 | 1999-09-13 | 日本電気株式会社 | 波長可変半導体レーザ |
US5682415A (en) * | 1995-10-13 | 1997-10-28 | O'hara; David B. | Collimator for x-ray spectroscopy |
US5771252A (en) | 1996-01-29 | 1998-06-23 | Sdl, Inc. | External cavity, continuously tunable wavelength source |
JPH10335709A (ja) * | 1997-05-29 | 1998-12-18 | Yazaki Corp | 発光ダイオードチップのランプハウス |
US6259713B1 (en) | 1997-12-15 | 2001-07-10 | The University Of Utah Research Foundation | Laser beam coupler, shaper and collimator device |
JP3719052B2 (ja) * | 1999-07-02 | 2005-11-24 | 株式会社トッパンNecサーキットソリューションズ | 光モジュール |
US6452726B1 (en) * | 1999-07-16 | 2002-09-17 | Michael J. Mandella | Collimators and collimator arrays employing ellipsoidal solid immersion lenses |
US6464365B1 (en) | 1999-07-23 | 2002-10-15 | Bae Systems Information And Electronic Systems Integration Inc. | Light collimator for liquid crystal displays |
JP3595817B2 (ja) | 1999-09-20 | 2004-12-02 | 株式会社トッパンNecサーキットソリューションズ | 光モジュールの実装方法及び実装構造 |
JP2004501405A (ja) | 2000-06-22 | 2004-01-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 光学イメージを形成する方法、この方法に用いるマスク、この方法を用いてデバイスを製造する方法、およびこの方法を遂行するための装置 |
JP4789379B2 (ja) * | 2001-09-26 | 2011-10-12 | 富士通株式会社 | 光スイッチ |
KR100444176B1 (ko) * | 2001-12-15 | 2004-08-09 | 한국전자통신연구원 | 전기 신호에 의해 동작되는 광 편향기 및 이를 이용한파장 가변형 외부 공진기 |
US7035524B2 (en) * | 2002-12-26 | 2006-04-25 | Fujitsu Limited | Variable optical attenuator |
US7027670B2 (en) * | 2003-10-17 | 2006-04-11 | Fujitsu Limited | Cascaded deflectors for multi-channel optical switches, and optical switching modules and methods having cascaded deflectors |
US7197208B2 (en) * | 2004-04-13 | 2007-03-27 | Agilent Technologies | Wavelength tunable light sources and methods of operating the same |
JP2006017648A (ja) * | 2004-07-05 | 2006-01-19 | Fuji Photo Film Co Ltd | 測定装置 |
-
2005
- 2005-05-31 KR KR1020050046155A patent/KR100701006B1/ko not_active IP Right Cessation
- 2005-11-30 US US11/290,295 patent/US7174068B2/en not_active Expired - Fee Related
- 2005-12-05 TW TW094142777A patent/TWI274923B/zh not_active IP Right Cessation
- 2005-12-06 EP EP05111743A patent/EP1729382B1/en not_active Not-in-force
- 2005-12-06 AT AT05111743T patent/ATE504965T1/de not_active IP Right Cessation
- 2005-12-06 DE DE602005027332T patent/DE602005027332D1/de active Active
- 2005-12-09 JP JP2005356232A patent/JP2006339622A/ja active Pending
- 2005-12-15 CN CN200510131613XA patent/CN1874093B/zh not_active Expired - Fee Related
-
2007
- 2007-01-17 US US11/654,112 patent/US7283706B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI760448B (zh) * | 2017-03-06 | 2022-04-11 | 中國大陸商深圳源光科技有限公司 | 用於激光雷達光源之儀器及用於激光掃描的系統 |
Also Published As
Publication number | Publication date |
---|---|
EP1729382A1 (en) | 2006-12-06 |
EP1729382B1 (en) | 2011-04-06 |
TW200641423A (en) | 2006-12-01 |
CN1874093A (zh) | 2006-12-06 |
KR100701006B1 (ko) | 2007-03-29 |
US7283706B2 (en) | 2007-10-16 |
JP2006339622A (ja) | 2006-12-14 |
US20060269190A1 (en) | 2006-11-30 |
US7174068B2 (en) | 2007-02-06 |
US20070133650A1 (en) | 2007-06-14 |
ATE504965T1 (de) | 2011-04-15 |
CN1874093B (zh) | 2012-03-28 |
KR20060124310A (ko) | 2006-12-05 |
DE602005027332D1 (de) | 2011-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI274923B (en) | Parabolic waveguide-type collimating lens and tunable external cavity laser diode provided with the same | |
USRE37051E1 (en) | Semiconductor gain medium with multimode and single mode regions | |
US6917729B2 (en) | Tailored index single mode optical amplifiers and devices and systems including same | |
US7474817B2 (en) | Optical semiconductor device and optical semiconductor integrated circuit | |
US5710847A (en) | Semiconductor optical functional device | |
CN104937791B (zh) | 激光装置、光调制装置以及光半导体元件 | |
US20060176544A1 (en) | Folded cavity semiconductor optical amplifier (FCSOA) | |
JP2624279B2 (ja) | スラブ導波光出射半導体レーザー | |
US6327413B1 (en) | Optoelectronic device and laser diode | |
US6687267B2 (en) | Widely tunable laser | |
EP0533475B1 (en) | Optical semiconductor device, method of producing the optical semiconductor device, and laser device using optical semiconductor devices | |
JP2023024359A (ja) | Vcsel用反射器 | |
JP2947142B2 (ja) | 波長可変半導体レーザ | |
US20210143609A1 (en) | Semiconductor optical device and method for producing semiconductor optical device | |
JPH08298355A (ja) | レーザー装置 | |
JPH0479287A (ja) | 波長可変半導体レーザ | |
JPS59184585A (ja) | 単一軸モ−ド半導体レ−ザ | |
CN118872165A (zh) | 分布式反馈激光器和制造这种激光器的方法 | |
JPH02263491A (ja) | 半導体レーザ装置 | |
JPH065982A (ja) | 半導体レーザ素子 | |
JP2000162654A (ja) | 偏波無依存型光半導体装置 | |
JPH11101960A (ja) | 光半導体装置及びその製造方法 | |
JPS6143492A (ja) | 半導体発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |