CN116316060A - 基于长轴偏振弯曲增益波导的外腔调谐激光器及耦合方法 - Google Patents
基于长轴偏振弯曲增益波导的外腔调谐激光器及耦合方法 Download PDFInfo
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- CN116316060A CN116316060A CN202310222136.6A CN202310222136A CN116316060A CN 116316060 A CN116316060 A CN 116316060A CN 202310222136 A CN202310222136 A CN 202310222136A CN 116316060 A CN116316060 A CN 116316060A
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- 230000010287 polarization Effects 0.000 title claims abstract description 48
- 238000010168 coupling process Methods 0.000 title claims abstract description 33
- 238000005452 bending Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000008878 coupling Effects 0.000 claims abstract description 19
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
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CN202310222136.6A CN116316060A (zh) | 2023-03-09 | 2023-03-09 | 基于长轴偏振弯曲增益波导的外腔调谐激光器及耦合方法 |
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CN202310222136.6A CN116316060A (zh) | 2023-03-09 | 2023-03-09 | 基于长轴偏振弯曲增益波导的外腔调谐激光器及耦合方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117895327A (zh) * | 2024-03-13 | 2024-04-16 | 南京理工大学 | 一种基于高增益长轴偏振波导的可调谐干涉光源及干涉仪 |
CN117895327B (zh) * | 2024-03-13 | 2024-06-04 | 南京理工大学 | 一种基于高增益长轴偏振波导的可调谐干涉光源及干涉仪 |
Citations (7)
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---|---|---|---|---|
US6091755A (en) * | 1997-11-21 | 2000-07-18 | Sdl, Inc. | Optically amplifying semiconductor diodes with curved waveguides for external cavities |
US20060215724A1 (en) * | 2005-03-24 | 2006-09-28 | Mitutoyo Corporation | External cavity laser with flexure tuning element |
CN1874093A (zh) * | 2005-05-31 | 2006-12-06 | 韩国电子通信研究院 | 抛物柱面波导型准直透镜和可调外腔激光二极管 |
US20120014399A1 (en) * | 2008-06-18 | 2012-01-19 | Wang Shaokai | Grating External-Cavity Laser and Quasi-Synchronous Tuning Method Thereof |
US20130177033A1 (en) * | 2009-12-30 | 2013-07-11 | National University Corporation Chiba University | Tunable external resonator laser |
US20150349492A1 (en) * | 2012-09-21 | 2015-12-03 | National University Corporation Chiba University | External resonator laser |
JP2018088499A (ja) * | 2016-11-29 | 2018-06-07 | スペクトラ・クエスト・ラボ株式会社 | 曲がり導波路レーザチップを用いる外部共振器レーザ |
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2023
- 2023-03-09 CN CN202310222136.6A patent/CN116316060A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091755A (en) * | 1997-11-21 | 2000-07-18 | Sdl, Inc. | Optically amplifying semiconductor diodes with curved waveguides for external cavities |
US20060215724A1 (en) * | 2005-03-24 | 2006-09-28 | Mitutoyo Corporation | External cavity laser with flexure tuning element |
CN1874093A (zh) * | 2005-05-31 | 2006-12-06 | 韩国电子通信研究院 | 抛物柱面波导型准直透镜和可调外腔激光二极管 |
US20120014399A1 (en) * | 2008-06-18 | 2012-01-19 | Wang Shaokai | Grating External-Cavity Laser and Quasi-Synchronous Tuning Method Thereof |
US20130177033A1 (en) * | 2009-12-30 | 2013-07-11 | National University Corporation Chiba University | Tunable external resonator laser |
US20150349492A1 (en) * | 2012-09-21 | 2015-12-03 | National University Corporation Chiba University | External resonator laser |
JP2018088499A (ja) * | 2016-11-29 | 2018-06-07 | スペクトラ・クエスト・ラボ株式会社 | 曲がり導波路レーザチップを用いる外部共振器レーザ |
Non-Patent Citations (1)
Title |
---|
周南权;陶纯匡;崔胜利;: "基于光栅光阀可调谐半导体激光器外腔结构的设计研究", 激光杂志, no. 03, 15 June 2008 (2008-06-15) * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117895327A (zh) * | 2024-03-13 | 2024-04-16 | 南京理工大学 | 一种基于高增益长轴偏振波导的可调谐干涉光源及干涉仪 |
CN117895327B (zh) * | 2024-03-13 | 2024-06-04 | 南京理工大学 | 一种基于高增益长轴偏振波导的可调谐干涉光源及干涉仪 |
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Inventor after: Han Zhigang Inventor after: Ge Jiani Inventor after: Yang Zhenying Inventor after: Zhu Rihong Inventor after: Ruan Bowei Inventor after: Yang Shunfan Inventor after: Li Junbo Inventor before: Li Junbo Inventor before: Ge Jiani Inventor before: Yang Zhenying Inventor before: Han Zhigang Inventor before: Zhu Rihong Inventor before: Ruan Bowei Inventor before: Yang Shunfan |
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