TWI266439B - Semiconductor light emitting device and its manufacturing method - Google Patents

Semiconductor light emitting device and its manufacturing method

Info

Publication number
TWI266439B
TWI266439B TW094132461A TW94132461A TWI266439B TW I266439 B TWI266439 B TW I266439B TW 094132461 A TW094132461 A TW 094132461A TW 94132461 A TW94132461 A TW 94132461A TW I266439 B TWI266439 B TW I266439B
Authority
TW
Taiwan
Prior art keywords
layer
light emitting
emitting device
semiconductor
alloy
Prior art date
Application number
TW094132461A
Other languages
English (en)
Other versions
TW200618355A (en
Inventor
Hidekazu Aoyagi
Takashi Kato
Tetsuji Matsuo
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of TW200618355A publication Critical patent/TW200618355A/zh
Application granted granted Critical
Publication of TWI266439B publication Critical patent/TWI266439B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
TW094132461A 2004-09-29 2005-09-20 Semiconductor light emitting device and its manufacturing method TWI266439B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004283566A JP2006100500A (ja) 2004-09-29 2004-09-29 半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
TW200618355A TW200618355A (en) 2006-06-01
TWI266439B true TWI266439B (en) 2006-11-11

Family

ID=36098025

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094132461A TWI266439B (en) 2004-09-29 2005-09-20 Semiconductor light emitting device and its manufacturing method

Country Status (4)

Country Link
US (1) US20060065901A1 (zh)
JP (1) JP2006100500A (zh)
CN (1) CN1770489A (zh)
TW (1) TWI266439B (zh)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5032017B2 (ja) * 2005-10-28 2012-09-26 株式会社東芝 半導体発光素子及びその製造方法並びに半導体発光装置
JP2007157852A (ja) * 2005-12-01 2007-06-21 Sony Corp 半導体発光素子およびその製造方法
DE602006008256D1 (de) * 2005-12-15 2009-09-17 Lg Electronics Inc LED mit vertikaler Struktur und deren Herstellungsverfahren
JP5232971B2 (ja) * 2006-04-28 2013-07-10 豊田合成株式会社 窒化物系半導体発光素子の製造方法
JP5250856B2 (ja) * 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP4946195B2 (ja) * 2006-06-19 2012-06-06 サンケン電気株式会社 半導体発光素子及びその製造方法
DE102006035635A1 (de) 2006-07-31 2008-02-07 Osram Opto Semiconductors Gmbh Beleuchtungsanordnung
JP5126875B2 (ja) 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP4894411B2 (ja) * 2006-08-23 2012-03-14 日立電線株式会社 半導体発光素子
KR100867529B1 (ko) * 2006-11-14 2008-11-10 삼성전기주식회사 수직형 발광 소자
US9178121B2 (en) * 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
JP4770745B2 (ja) * 2007-01-23 2011-09-14 三菱電機株式会社 半導体発光素子
JP4290745B2 (ja) * 2007-03-16 2009-07-08 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
JP4973279B2 (ja) * 2007-03-29 2012-07-11 豊田合成株式会社 発光装置及びその製造方法
JP4997402B2 (ja) * 2007-06-21 2012-08-08 株式会社ジャパンディスプレイセントラル チップ状点光源装置及びこれを用いた面状光源装置、液晶表示装置
JP5211887B2 (ja) * 2007-07-03 2013-06-12 日亜化学工業株式会社 半導体発光素子およびその製造方法
US8410510B2 (en) 2007-07-03 2013-04-02 Nichia Corporation Semiconductor light emitting device and method for fabricating the same
WO2009053881A1 (en) * 2007-10-25 2009-04-30 Koninklijke Philips Electronics N.V. Polarized light emitting device
CN101911219B (zh) 2008-01-17 2015-12-16 日亚化学工业株式会社 导电性材料及其制造方法、电子设备、发光装置及其制造方法
WO2009117849A1 (en) * 2008-03-26 2009-10-01 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with a highly reflective ohmic-electrode
KR101480551B1 (ko) 2008-04-04 2015-01-08 엘지이노텍 주식회사 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
KR101428066B1 (ko) 2008-04-02 2014-08-07 엘지이노텍 주식회사 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
EP2262012B1 (en) 2008-04-02 2017-12-27 LG Innotek Co., Ltd. Light-emitting diode and a method of manufacturing thereof
TWI447783B (zh) * 2008-04-28 2014-08-01 Advanced Optoelectronic Tech 三族氮化合物半導體發光元件之製造方法及其結構
US8581283B2 (en) * 2008-04-28 2013-11-12 Advanced Optoelectronic Technology, Inc. Photoelectric device having group III nitride semiconductor
KR20090119596A (ko) * 2008-05-16 2009-11-19 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102008038725B4 (de) * 2008-08-12 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
WO2010084746A1 (ja) * 2009-01-23 2010-07-29 日亜化学工業株式会社 半導体装置及びその製造方法
US8836130B2 (en) 2009-01-23 2014-09-16 Nichia Corporation Light emitting semiconductor element bonded to a base by a silver coating
WO2010084742A1 (ja) * 2009-01-23 2010-07-29 日亜化学工業株式会社 半導体装置及びその製造方法
TWI485879B (zh) * 2009-04-09 2015-05-21 Lextar Electronics Corp 發光二極體晶片及其製造方法
KR101007133B1 (ko) * 2009-06-08 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102009033686A1 (de) * 2009-07-17 2011-01-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines anorganischen optoelektronischen Halbleiterbauteils
TWI509630B (zh) 2009-07-21 2015-11-21 Nichia Corp A method of manufacturing a conductive material, a conductive material obtained by the method, an electronic device containing the conductive material, and a light-emitting device
KR101081193B1 (ko) * 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8084776B2 (en) * 2010-02-25 2011-12-27 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting system
KR101007137B1 (ko) * 2010-03-08 2011-01-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101867106B1 (ko) 2010-03-30 2018-06-12 다이니폰 인사츠 가부시키가이샤 Led용 수지 부착 리드 프레임, 반도체 장치, 반도체 장치의 제조 방법 및 led용 수지 부착 리드 프레임의 제조 방법
JP5922326B2 (ja) * 2010-07-26 2016-05-24 大日本印刷株式会社 Ｌｅｄ用リードフレームまたは基板およびその製造方法、ならびに半導体装置およびその製造方法
KR101646664B1 (ko) * 2010-05-18 2016-08-08 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
KR101662010B1 (ko) 2010-05-20 2016-10-05 엘지이노텍 주식회사 발광 소자
KR101125025B1 (ko) 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
CN102376838A (zh) * 2010-08-06 2012-03-14 隆达电子股份有限公司 具区域保护层的发光二极管
CN101969092B (zh) * 2010-09-16 2014-03-26 兰红波 垂直结构金属衬底准光子晶体hb-led芯片及其制造方法
CN105845816A (zh) 2010-11-02 2016-08-10 大日本印刷株式会社 附有树脂引线框及半导体装置
KR101826983B1 (ko) * 2011-09-21 2018-03-22 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 라이트 유닛, 발광소자 제조방법
JP5896214B2 (ja) * 2012-01-23 2016-03-30 日亜化学工業株式会社 半導体装置の製造方法
TWI662719B (zh) * 2012-03-30 2019-06-11 晶元光電股份有限公司 發光元件
TWI523269B (zh) 2012-03-30 2016-02-21 晶元光電股份有限公司 發光元件
CN102637790A (zh) * 2012-05-03 2012-08-15 杭州士兰明芯科技有限公司 一种led芯片及其相应的制作方法
JP5433749B2 (ja) * 2012-09-18 2014-03-05 株式会社東芝 半導体発光素子及び半導体発光装置
TWI581458B (zh) * 2012-12-07 2017-05-01 晶元光電股份有限公司 發光元件
TWI626395B (zh) 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置
JP6398323B2 (ja) 2014-05-25 2018-10-03 日亜化学工業株式会社 半導体発光素子の製造方法
US10672948B2 (en) * 2017-12-15 2020-06-02 Saphlux, Inc. Methods for producing light extraction structures for semiconductor devices
KR102601950B1 (ko) 2018-11-16 2023-11-14 삼성전자주식회사 Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 장치
CN109728137A (zh) * 2018-12-28 2019-05-07 映瑞光电科技(上海)有限公司 Led衬底转移的方法以及垂直结构led芯片
CN109830590B (zh) * 2019-02-03 2020-10-20 泉州三安半导体科技有限公司 发光装置
WO2020258033A1 (zh) 2019-06-25 2020-12-30 京东方科技集团股份有限公司 发光二极管及其制作方法、显示装置
CN110289254A (zh) * 2019-06-27 2019-09-27 京东方科技集团股份有限公司 微型发光二极管及其制备方法
KR20220028944A (ko) 2020-08-31 2022-03-08 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법
CN117393682A (zh) * 2023-12-13 2024-01-12 晶能光电股份有限公司 微显示装置、微显示阵列结构及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
US5952681A (en) * 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding

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Publication number Publication date
JP2006100500A (ja) 2006-04-13
CN1770489A (zh) 2006-05-10
US20060065901A1 (en) 2006-03-30
TW200618355A (en) 2006-06-01

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