TW200637034A - GaN-based light-emitting diode and luminous device - Google Patents

GaN-based light-emitting diode and luminous device

Info

Publication number
TW200637034A
TW200637034A TW094143799A TW94143799A TW200637034A TW 200637034 A TW200637034 A TW 200637034A TW 094143799 A TW094143799 A TW 094143799A TW 94143799 A TW94143799 A TW 94143799A TW 200637034 A TW200637034 A TW 200637034A
Authority
TW
Taiwan
Prior art keywords
layer
gan
based semiconductor
type
emitting diode
Prior art date
Application number
TW094143799A
Other languages
Chinese (zh)
Other versions
TWI282635B (en
Inventor
Takahide Joichi
Hiroaki Okagawa
Hiroaki Murata
Tsuyoshi Takano
Original Assignee
Mitsubishi Cable Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Ind Ltd filed Critical Mitsubishi Cable Ind Ltd
Publication of TW200637034A publication Critical patent/TW200637034A/en
Application granted granted Critical
Publication of TWI282635B publication Critical patent/TWI282635B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

This invention provides a GaN-based light-emitting diode of which luminous efficiency is improved and a luminous device using the same. In the present invention, a luminous layer (3) composed of GaN-based semiconductor and a p-type GaN-based semiconductor (4) are formed in order on a n-type GaN-based semiconductor layer (2), and in appearance of the p-type GaN-based semiconductor (4), a p-type ohrnic electrode (P2) is formed as a pattern with window, and a reflection layer (P5) of metal for reflecting light from the luminous layer (3) passing through the window is formed to interpose the p-type ohmic electrode (P2) with the p-type GaN-based semiconductor layer (4),and a protection film (P4) composed of insulation material is interposed between the reflection layer (P5) and the p-type ohmic electrode (P2). In a preferable embodiment of the GaN-based light-emitting diode, the most surface layer of the reflection layer (P5) is used as bonding layer, or the bonding layer is furthermore formed over the reflection layer (P5), and the bonding layer and base material for mounting are joined by conductive joining material.
TW94143799A 2005-02-07 2005-12-12 GaN-based light-emitting diode and luminous device TWI282635B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005031155 2005-02-07
JP2005284375 2005-09-29
JP2005317781 2005-10-31

Publications (2)

Publication Number Publication Date
TW200637034A true TW200637034A (en) 2006-10-16
TWI282635B TWI282635B (en) 2007-06-11

Family

ID=36777077

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94143799A TWI282635B (en) 2005-02-07 2005-12-12 GaN-based light-emitting diode and luminous device

Country Status (3)

Country Link
JP (1) JPWO2006082687A1 (en)
TW (1) TWI282635B (en)
WO (1) WO2006082687A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387130B (en) * 2007-11-19 2013-02-21
TWI466327B (en) * 2011-12-29 2014-12-21 Ind Tech Res Inst Method for fabricating wafer-level light emitting diode structure
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
US9837581B2 (en) 2010-03-15 2017-12-05 Lg Innotek Co., Ltd. Light emitting device and light emitting device package

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JP5092419B2 (en) * 2007-01-24 2012-12-05 三菱化学株式会社 GaN-based light emitting diode element
DE102007019776A1 (en) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing a plurality of optoelectronic components
DE102007019775A1 (en) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelectronic component
JP4983613B2 (en) * 2007-08-18 2012-07-25 日亜化学工業株式会社 Semiconductor light emitting device
JP2009267263A (en) * 2008-04-28 2009-11-12 Kyocera Corp Light-emitting device and method for manufacturing the same
KR101047718B1 (en) * 2008-11-26 2011-07-08 엘지이노텍 주식회사 Light emitting element
JP2010166012A (en) * 2008-12-17 2010-07-29 Sumitomo Electric Ind Ltd Ohmic electrode, semiconductor device, method for manufacturing ohmic electrode, and method for manufacturing semiconductor device
DE102009034359A1 (en) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-contact and LED for the ultraviolet spectral range
JP2011054598A (en) * 2009-08-31 2011-03-17 Toshiba Corp Semiconductor light-emitting element and method for producing the same
KR101014155B1 (en) 2010-03-10 2011-02-10 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
JP5284300B2 (en) 2010-03-10 2013-09-11 株式会社東芝 Semiconductor light emitting element, lighting device using the same, and method for manufacturing semiconductor light emitting element
JP5659966B2 (en) * 2010-06-29 2015-01-28 日亜化学工業株式会社 Semiconductor device and manufacturing method thereof
CN103222073B (en) 2010-08-03 2017-03-29 财团法人工业技术研究院 Light-emitting diode chip for backlight unit, package structure for LED and to form above-mentioned method
JP5737066B2 (en) * 2010-08-26 2015-06-17 日亜化学工業株式会社 Semiconductor light emitting device
JP5849388B2 (en) * 2010-11-04 2016-01-27 サンケン電気株式会社 Semiconductor light emitting device
JP6133076B2 (en) * 2013-02-16 2017-05-24 星和電機株式会社 Semiconductor light emitting element and light emitting device
CN103618042B (en) * 2013-11-25 2016-01-20 扬州中科半导体照明有限公司 A kind of semiconductor light-emitting diode chip
JP6327564B2 (en) * 2014-11-12 2018-05-23 パナソニックＩｐマネジメント株式会社 Semiconductor device
KR102443694B1 (en) 2016-03-11 2022-09-15 삼성전자주식회사 Light emitting diode(LED) device for improving current spread characteristics and light extraction efficiency
CN106328776B (en) * 2016-08-31 2019-04-09 中联西北工程设计研究院有限公司 A kind of preparation method of vertical structure purple LED chip
US10522708B2 (en) 2017-12-14 2019-12-31 Lumileds Llc Method of preventing contamination of LED die
JP7308831B2 (en) * 2017-12-14 2023-07-14 ルミレッズ リミテッド ライアビリティ カンパニー Method to prevent LED die contamination
WO2020011117A1 (en) * 2018-07-12 2020-01-16 江西兆驰半导体有限公司 Ultraviolet light emitting diode chip for improving light extraction efficiency, and manufacturing method therefor
DE102019100548A1 (en) * 2019-01-10 2020-07-16 Osram Opto Semiconductors Gmbh OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH REFLECTIVE GRID STRUCTURE

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Publication number Priority date Publication date Assignee Title
JP2001217461A (en) * 2000-02-04 2001-08-10 Matsushita Electric Ind Co Ltd Compound light-emitting device
JP3498698B2 (en) * 2000-11-08 2004-02-16 日亜化学工業株式会社 Gallium nitride compound semiconductor device
JP2003133589A (en) * 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd GaN BASED SEMICONDUCTOR LIGHT EMITTING DIODE
JP4122785B2 (en) * 2002-01-30 2008-07-23 日亜化学工業株式会社 Light emitting element
JP4311000B2 (en) * 2002-11-28 2009-08-12 日亜化学工業株式会社 Nitride semiconductor light emitting device and manufacturing method thereof
JP2005026291A (en) * 2003-06-30 2005-01-27 Sharp Corp Nitride-based semiconductor light emitting device and its manufacturing method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI387130B (en) * 2007-11-19 2013-02-21
US9837581B2 (en) 2010-03-15 2017-12-05 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
TWI608634B (en) * 2010-03-15 2017-12-11 Ｌｇ伊諾特股份有限公司 Light emitting device
US10084116B2 (en) 2010-03-15 2018-09-25 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
US10510929B2 (en) 2010-03-15 2019-12-17 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
US10833226B2 (en) 2010-03-15 2020-11-10 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
US9178107B2 (en) 2010-08-03 2015-11-03 Industrial Technology Research Institute Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
TWI466327B (en) * 2011-12-29 2014-12-21 Ind Tech Res Inst Method for fabricating wafer-level light emitting diode structure

Also Published As

Publication number Publication date
JPWO2006082687A1 (en) 2008-06-26
WO2006082687A1 (en) 2006-08-10
TWI282635B (en) 2007-06-11

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