JP4311000B2 - Nitride semiconductor light emitting device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a nitride semiconductor light emitting device that emits light through a p-side contact layer.
[0002]
[Prior art]
A nitride semiconductor light-emitting device capable of emitting light having a relatively short wavelength is usually obtained by growing a predetermined nitride semiconductor layer on an insulating substrate and forming n-type and p-type electrodes on the semiconductor layer. The light is emitted from the substrate side or the semiconductor side. In this nitride semiconductor light emitting device, a p-type contact layer is usually formed at the position farthest from the substrate. When light is emitted through the p-type contact layer, an electrode is formed as follows. ing.
For example, in Patent Document 1, when light emitted from the light emitting layer is emitted upward, as a pattern pattern of the upper electrode, a comb-shaped pattern as shown in FIG. ), And the electrode having the comb pattern shown in FIG. 8B has a structure for extracting light emitted from an opening having no electrode. It is disclosed.
[0003]
[Patent Document 1]
JP 2000-174339 A (paragraph 0005, FIG. 8 (b), FIG. 8 (c))
[0004]
[Problems to be solved by the invention]
However, in the conventional example using a transparent electrode, light is attenuated by the transparent electrode, and there is a certain limit to improving the light extraction efficiency.
Further, in the conventional example in which light is emitted from the opening, since the resistance value of the p-type nitride semiconductor layer is large, current is not easily injected into the light emitting layer immediately below the opening from which light is emitted. There was a certain limit to improving the efficiency of extracting emitted light.
[0005]
Accordingly, an object of the present invention is to provide a nitride semiconductor light emitting device having high luminous efficiency and high efficiency of extracting emitted light.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, a method for manufacturing a nitride semiconductor light emitting device according to the present invention includes a contact layer made of a p-type nitride semiconductor, and a part of the contact layer is excluded except for a light emitting portion. In the method for manufacturing a nitride semiconductor light emitting device in which a p-side ohmic electrode is formed,
An electrode forming step of partially forming a p-side ohmic electrode on the p-type contact layer except for the light emitting portion;
Separately from the electrode forming step, a metal layer forming step for forming a metal layer made of a metal selected from the group consisting of Ni and Pt on the surface of the p-type contact layer of the light emitting portion, and a metal for removing the metal layer A layer removal step,
Before the metal layer forming step, the electrode forming step ,
In the metal layer forming step, the metal layer is formed so as to cover the light emitting portion and the p-side ohmic electrode .
In the nitride semiconductor light emitting device manufactured by the manufacturing method according to the present invention configured as described above, the Ni layer or Pt layer having a catalytic action is used during the growth of the nitride semiconductor in the p-type contact layer of the light emitting portion. The resistance value can be lowered by accelerating the removal of the trapped hydrogen.
Thus, in this nitride compound semiconductor light-emitting device, can be more effectively injecting carriers into the active layer located directly below the light emitting portion, light emitted from the active layer immediately below the light emitting portion, directly above It can radiate | emit efficiently from a light-projection part.
[0007]
In the method for manufacturing a nitride semiconductor light emitting device according to the present invention, the metal layer removing step may be a step of removing the nickel element or the platinum element so as to remain .
[0008]
In the method for manufacturing a nitride semiconductor light emitting device according to the present invention , the metal layer may be removed by wet etching in the metal layer removing step .
[0009]
In the method for manufacturing a nitride semiconductor light emitting device according to the present invention, the p-side ohmic electrode may be made of any one of Rh, Ir, Pt, Ru, W, and Ti .
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a nitride semiconductor light emitting device according to an embodiment of the present invention will be described with reference to the drawings.
The nitride semiconductor light emitting device of this embodiment includes an n-side nitride semiconductor layer including an n-type contact layer 3, an active layer 5, and a p-type contact layer 7 on a substrate 1 with a buffer layer 2 interposed therebetween. A nitride semiconductor light emitting device that has a p-side nitride semiconductor layer as the uppermost layer (FIG. 2) and emits light from the p-type contact layer side, and has the following characteristics.
[0013]
That is, in the nitride semiconductor light emitting device according to the embodiment of the present invention, as shown in FIGS. 1 and 2, the p-side electrode composed of the p-side ohmic electrode 70 and the p-side pad electrode 71 is formed on the p-type contact layer. By forming partially (with an opening), the surface of the p-type contact layer on which the p-side electrode is not formed is used as the light emitting portion 7a.
The p-type contact layer 7 opened as the light emitting portion 7a forms a Ni layer or a Pt layer having a catalytic action for promoting the detachment of hydrogen from the nitride semiconductor, and then the Ni layer or the Pt layer is formed. The modification process is performed through a process of removing by etching.
[0014]
In the nitride semiconductor light emitting device according to the present invention configured as described above, after the Ni layer or Pt layer having catalytic action is formed, the Ni layer or Pt layer is subjected to a modification process of removing by etching. In the p-type contact layer 7 located in the light emitting part 7a, the separation of hydrogen taken in during the growth of the nitride semiconductor is promoted, and the resistance value of the p-type contact layer 7 located under the light emitting part 7a Can be lowered. As a result, carriers can be injected more effectively into the active layer 5 located immediately below the light emitting portion 7a, compared to a light emitting element that has not been subjected to the modification treatment, and directly below the light emitting portion 7a. The light emitted from the active layer can be efficiently emitted from the light emitting portion 7a immediately above.
[0015]
Further, in the nitride semiconductor light emitting device of the embodiment configured as described above, since the Ni layer or the Pt layer is formed and then the Ni layer or the Pt layer is removed by etching. Ni element or platinum element remains on and near the surface of the p-type contact layer 7 of the emission part 7a.
As described above, the light emitting device according to the present invention having Ni element or platinum element on the surface of the p-type contact layer 7 of the light emitting portion 7a and in the vicinity thereof emits light more effectively than the conventional light emitting device. Carriers can be injected into the active layer 5 positioned immediately below the portion 7a, and light emitted from the active layer immediately below the light emitting portion 7a can be efficiently emitted from the light emitting portion 7a directly above.
[0016]
In the above-described nitride semiconductor light emitting device according to the present invention, the modification process is selectively performed on the p-type contact layer 7 located in the light emitting portion 7a (opening where the p-side electrode is not formed). It is preferable.
In this way, the resistance of the p-type contact layer 7 located under the light emitting portion 7a can be made lower than that of the p-type contact layer 7 located under the p-side ohmic electrode. As a result of allowing a large amount of current to flow, carriers can be more effectively injected into the active layer located immediately below the light emitting portion 7a, and the light emitted from the active layer immediately below the light emitting portion 7a can be It can radiate | emit efficiently from the light emission part 7a immediately above.
That is, by selectively modifying the p-type contact layer 7 located in the light emitting portion 7a, light emission just below the p-side electrode, where it is difficult to extract emitted light, is suppressed, and light extraction is easy. The light emission in the active layer located immediately below the light emitting portion 7a can be increased.
[0017]
As a specific method for selectively modifying the p-type contact layer 7 located in the light emitting portion 7a, for example, after forming a p-side ohmic electrode having an opening such as a mesh electrode, After forming the Ni layer or the Pt layer so as to be in contact with at least the p-type contact layer exposed in the opening (the simplest method is to cover the entire p-side ohmic electrode), then the Ni layer or the Pt layer A process of removing the film by etching may be performed.
The nitride semiconductor light emitting device fabricated in this way has Ni element or platinum element together with Mg element on and near the surface of the p-type contact layer 7 of the light emitting portion 7a, and is directly under the p-side ohmic electrode. Although it contains only Mg element without substantially containing Ni element or platinum element, only the p-type contact layer 7 located in the light emitting portion 7a is selectively modified, and the emitted light is Light emission directly under the p-side electrode, which is difficult to extract, can be suppressed, and light emission in the active layer located immediately below the light emitting portion 7a where light can be easily extracted can be increased.
[0018]
Hereinafter, a method for manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention will be described.
(Growth process)
In this manufacturing method, first, on a substrate 1 made of sapphire, for example, a buffer layer 2 made of a nitride semiconductor, an n-type contact layer 3, an n-type cladding layer 4, an active layer 5, a p-type cladding layer 6 and p By growing the mold contact layer 7, a stacked structure for forming the light emitting portion is produced.
(Formation of n-electrode forming part)
Next, a part of the laminated structure is etched to expose a part of the n-type contact layer 3 as shown in FIG.
[0019]
(P-type annealing)
Further, the p-type cladding layer 6 and the p-type contact layer 7 are made p-type by heat treatment at 600 ° C.
(P-side ohmic electrode formation)
Next, Rh (400 Å), Ir (500 Å), and Pt (1000 Å) are sequentially formed on the p-type contact layer 7 and then patterned to form the p-side ohmic electrode 70 partially (mesh). .
The p-side ohmic electrode 70 is preferably formed in a pattern such as a mesh shape, a stripe shape, or the like so that the opening where the p-side ohmic electrode is not formed can be made relatively large. A mask is formed after the metal film is formed. Patterning can be performed by various methods such as etching using the method and lift-off.
The p-side ohmic electrode is formed using a material that can obtain a preferable ohmic characteristic with the p-type contact layer. As a material that can obtain a preferable ohmic characteristic with the p-type contact layer, Rh, Ir, Pt, Ru, W, Ti etc. are mentioned.
[0020]
(P-side pad electrode formation)
Next, the p-side pad electrode 71 is formed as shown in FIG. For example, the p-side pad electrode is formed in a two-layer structure in which Pt is formed to a thickness of 400 mm and Au is formed to a thickness of 6500 mm.
(P ohmic annealing)
Next, in order to obtain good ohmic contact between the p-type contact layer 7 and the p-side ohmic electrode 70, heat treatment (annealing) is performed at 600 ° C.
[0021]
(N electrode formation)
Next, for example, the n-electrode 30 in which W (200 mm), Al (2000 mm), W (500 mm), Pt (1000 mm), and Au (3500 mm) are stacked is exposed by etching a part of the stacked structure. The n-type contact layer 3 is formed on the surface (n electrode forming portion).
In addition, when using the material which is hard to oxidize as this n electrode, you may make it form an n electrode before a p ohmic annealing process.
(Formation of Ni layer)
Next, for example, a Ni layer having a thickness of 60 mm is formed so as to cover the entire surface of the p-type contact layer 7.
(Removal of Ni layer)
Then, the Ni layer is removed by wet etching.
It is preferable to select an etching solution that dissolves only Ni and does not dissolve the p-side ohmic electrode and the p-side pad electrode.
Further, in the present invention, this Ni layer may be removed after being formed at least in the opening portion on the p-type contact layer 7 where the p-side ohmic electrode is not formed.
[0022]
As described above, the method for manufacturing a nitride semiconductor light emitting device of the present embodiment includes the reforming process including the Ni forming process and the Ni removing process. The release of hydrogen taken in during the growth of the physical semiconductor is promoted, and the resistance value of the p-type contact layer located under the light emitting portion 7a can be lowered.
[0023]
Further, in the method for manufacturing a nitride semiconductor light emitting device of the present embodiment, since the modification process is performed after the p-side electrode is formed in a predetermined pattern, the light emitting portion 7a (the p-side electrode is formed). This can be done selectively with respect to the p-type contact layer 7 located in the (not-opened portion).
Therefore, according to the manufacturing method of the present embodiment, carriers can be more effectively injected into the active layer 5 located immediately below the light emitting portion 7a, and light is emitted from the active layer immediately below the light emitting portion 7a. Thus, a nitride semiconductor light emitting device that can efficiently emit the light from the light emitting portion 7a directly above can be manufactured.
Further, as in the present embodiment, the nitride semiconductor element that has been subjected to the modification process of the light emitting part and not subjected to the modification process to the p-side ohmic electrode formation part is formed on the p-type contact layer. Ni is deposited only on the emission part. At this time, Ni is formed by sputtering or the like, so that the film thickness is increased from the central portion of the light emitting portion to the boundary surface with the p-side ohmic electrode. Therefore, in the reforming process in the present embodiment, hydrogen detachment is promoted more closer to the boundary surface than the central part of the opening (that is, the reforming process is performed more strongly), and the resistance value is also increased. Lower. Thus, particularly strong light is emitted from the vicinity of the boundary with the p-side ohmic electrode at the light emitting portion. Therefore, for example, in the p-side ohmic electrode having a plurality of openings constituting the light emitting portion, such as a mesh-shaped p-side ohmic electrode, the vicinity of the boundary where strong light is emitted with a low resistance value (this strongly shining portion) The size of the opening (for example, the mesh) is set so that the ratio of the area of the entire area of the opening to the distance from the boundary increases.
[0024]
In the manufacturing method of the above embodiment, the modification process is performed after the p-side electrode (both the p-side ohmic electrode and the p-side pad electrode) is formed in a predetermined pattern. However, in the present invention, after the p-side ohmic electrode 70 is formed in a predetermined pattern, the reforming process may be performed before the p-side pad electrode 71 is formed.
Even in the above manner, it can be selectively performed on the p-type contact layer 7 located in the light emitting portion 7a, and has the same effect as the manufacturing method of the embodiment.
[0025]
In the present invention, before the p-side ohmic electrode 70 is formed, a reforming process is performed in which a Ni layer is formed on the entire surface of the p-type contact layer 7 and the Ni layer is removed, and then the p-side ohmic electrode 70 is formed. The p-side pad electrode 71 may be formed in a predetermined pattern.
Even in the above manner, carriers can be injected more effectively into the active layer located immediately below the light emitting portion 7a, compared to a conventional light emitting device that has not been subjected to the modification treatment. The light emitted from the active layer immediately below the emission part 7a can be efficiently emitted from the light emission part 7a immediately above.
Thus, if the surface is modified on the entire surface before forming the p-side electrode, the carrier injection efficiency is increased even immediately under the p-side ohmic electrode. However, the mesh electrode is formed on the p-type contact layer which is slightly removed by the surface modification. There is an advantage that the mesh electrode can be formed with good adhesion.
[0026]
【Example】
Examples according to the present invention will be described below.
Example 1.
Embodiment 1 will be described with reference to FIG.
Although not shown in FIG. 1, the first embodiment includes an undoped GaN layer on the buffer layer 2 and a lightly doped p-type lightly doped layer on the p-type cladding layer 6. Instead of one n-type cladding layer, a first multilayer film layer and an n-type superlattice multilayer film layer are included.
[0027]
(Substrate 1)
The substrate 1 made of sapphire (C-plane) is set in a MOVPE reaction vessel, and the temperature of the substrate is raised to 1050 ° C. while flowing hydrogen to clean the substrate.
[0028]
(Buffer layer 2)
Subsequently, the temperature is lowered to 510 ° C., hydrogen is used as the carrier gas, ammonia and TMG (trimethyl gallium) are used as the source gas, and a buffer layer 2 made of AlGaN is grown on the substrate 1 to a thickness of about 200 Å. The first buffer layer 2 grown at a low temperature can be omitted depending on the type of substrate, the growth method, and the like.
[0029]
(Undoped GaN layer)
After the growth of the buffer layer 2, only TMG is stopped and the temperature is raised to 1050 ° C. When the temperature reaches 1050 ° C., TMG and ammonia gas are similarly used as the source gas, and an undoped GaN layer is grown to a thickness of 1.5 μm.
[0030]
(N-side contact layer 3)
Subsequently, at 1050 ° C., the n-side contact layer 3 made of GaN doped with 6 × 10 ¹⁸ / cm ^{3 of} Si is grown to a thickness of 1.85 μm using TMG and ammonia gas as source gases and silane gas as impurity gases. Let
[0031]
(First multilayer layer)
Next, the silane gas alone was stopped, and the lower layer made of undoped GaN was grown to a thickness of 3000 Å at 1050 ° C. using TMG and ammonia gas. Subsequently, the silane gas was added at the same temperature to add Si at 6 × 10 ¹⁸ / An intermediate layer made of GaN doped with cm ³ is grown to a thickness of 300 angstroms. Subsequently, only silane gas is stopped, and an upper layer made of undoped GaN is grown to a thickness of 50 angstroms at the same temperature. A first multilayer layer having a total film thickness of 3350 Å is grown.
[0032]
(N-type superlattice multilayer film layer)
Next, at the same temperature, a first nitride semiconductor layer made of undoped GaN is grown to 40 Å, then the temperature is set to 800 ° C., and TMG, TMI, and ammonia are used to make undoped In _0.02 Ga _0.98 N. A second nitride semiconductor layer is grown to 20 Å. Then, these operations are repeated, and 10 layers are alternately laminated in the order of 1 + 2, and finally, an n-type composed of a multilayer film having a superlattice structure in which a first nitride semiconductor layer made of GaN is grown by 40 angstroms. A superlattice multilayer is grown to a thickness of 640 angstroms.
[0033]
(Active layer 5)
Next, a barrier layer made of undoped GaN is grown to a thickness of 200 angstroms, followed by a temperature of 800 ° C., and a well layer made of undoped In _0.4 Ga _0.6 N using TMG, TMI and ammonia is grown to a thickness of 30 angstroms. Grow with thickness. Then, five barrier layers and four well layers are alternately laminated in the order of barrier + well + barrier + well... + Barrier to grow an active layer 5 having a multiple quantum well structure having a total film thickness of 1120 angstroms. Let
[0034]
(Medium-doped multilayer p-type cladding layer 6)
Next, the first nitridation made of p-type Al _0.2 Ga _0.8 N doped with 5 × 10 ¹⁹ / cm ^{3 of} Mg using TMG, TMA, ammonia, Cp ₂ Mg (cyclopentadienyl magnesium) at a temperature of 1050 ° C. From an In _0.03 Ga _0.97 N doped with 5 × 10 ¹⁹ / cm ^{3 of} Mg using TMG, TMI, ammonia, Cp ₂ Mg, and growing a physical semiconductor layer with a thickness of 40 Å, followed by a temperature of 800 ° C. A second nitride semiconductor layer is grown to a thickness of 25 Å. Then, these operations are repeated, and 5 layers are alternately stacked in the order of 1 + 2, and finally, the first nitride semiconductor layer is grown to a thickness of 40 Å. The side multilayer clad layer 6 is grown to a thickness of 365 angstroms.
[0035]
(Lightly doped p-type lightly doped layer)
Subsequently, at 1050 ° C., a p-type lightly doped layer made of undoped GaN is grown to a thickness of 2000 Å using TMG and ammonia. This lightly doped layer is grown as undoped during growth, but Mg doped in the medium-doped multilayer p-type cladding layer 6 diffuses during the growth of the lightly doped layer 9, and Mg is diffused during the growth of the heavily doped p-type contact layer 7 and the lightly doped layer exhibits p-type.
The Mg concentration of the lightly doped layer is 2 × 10 ¹⁸ / cm ³ at the lowest concentration portion. Further, as shown in FIG. 2, the change in the Mg concentration of the lightly doped layer shows almost the same value as the Mg concentration of the p-type cladding layer 6 in the portion in contact with the p-type cladding layer 6. The Mg concentration gradually decreases as the distance from the layer 6 increases, and the Mg concentration near the p-type contact layer 7 to be grown later (immediately before the p-type contact layer 7 is grown) has a substantially minimum value.
[0036]
(Highly doped p-type contact layer 7)
Subsequently, a p-type contact layer 7 made of GaN doped with Mg at 1 × 10 ²⁰ / cm ³ is grown at a thickness of 1200 Å at 1050 ° C. using TMG, ammonia, and Cp ₂ Mg.
After the completion of the reaction, the temperature is lowered to room temperature, and the wafer is annealed in a reaction vessel at 700 ° C. in a nitrogen atmosphere to further reduce the resistance of the p-type layer.
[0037]
After annealing, the wafer is taken out of the reaction vessel, a mask having a predetermined shape is formed on the surface of the uppermost p-type contact layer 7, and etching is performed from the p-type contact layer 7 side with an RIE (reactive ion etching) apparatus. As shown in FIG. 1, the surface of the n-type contact layer 3 is exposed.
[0038]
Next, on the p-type contact layer 7, Rh is formed with 400 mm, Ir is formed with 500 mm, and Pt is formed with 1000 mm.
Next, the p-side pad electrode is formed at a position facing the n-type contact layer 3 in the order of 400 mm Pt and 6500 mm Au.
After the p-side pad electrode 71 is formed, the p-side ohmic electrode 70 is formed in a mesh by patterning the exposed p-side ohmic electrode. A lift-off method is used as a forming method.
[0039]
Next, in order to obtain good ohmic contact between the p-type contact layer 7 and the p-side ohmic electrode 70, heat treatment (annealing) is performed at 600 ° C.
Next, an n-electrode 30 is formed on the exposed surface of the n-type contact layer 3 by laminating W in the order of 200, Al in 2000, W in 500, Pt in 1000 and Au in 3500 in this order.
Next, a Ni layer having a thickness of 60 mm is formed so as to cover the entire surface of the p-type contact layer 7. Further, the Ni layer is removed by wet etching with dilute nitric acid or concentrated hydrochloric acid.
[0040]
In this way, a nitride semiconductor device is obtained. In this nitride semiconductor device, the p-side ohmic electrode 70 is formed in a mesh shape except for the p-side pad electrode forming portion on the surface of the p-type contact layer 7 serving as a light extraction surface, and the mesh forming portion is separated from the p-side pad electrode 71. Is formed.
In the nitride semiconductor light emitting device of Example 1 configured as described above, the forward voltage Vf was 3.61 V when the forward current was 20 mA.
[0041]
Example 2
The nitride semiconductor light emitting device of Example 2 is characterized in that the p-type contact layer was subjected to modification treatment before forming the p-side ohmic electrode, and then the p-side ohmic electrode and the p-side pad electrode were formed. Unlike Example 1, the other points were produced in the same manner as Example 1.
As a result, in the nitride semiconductor light emitting device of Example 2, the forward voltage Vf was 3.64 V when the forward current was 20 mA.
[0042]
Comparative Example 1
The nitride semiconductor light emitting device of Comparative Example 1 was fabricated in the same manner as in Example 1 except that the modification treatment was not performed.
As a result, in the nitride semiconductor light emitting device of Comparative Example 1, the forward voltage Vf was 3.67 V when the forward current was 20 mA.
[0043]
In the present embodiment and examples, the p-side ohmic electrode is not meshed under the p-side pad electrode 71. However, in the present invention, the p-side ohmic electrode below the p-side pad electrode 71 may have a mesh shape. Furthermore, the step of forming and removing Ni for surface modification may be performed before the p-side pad electrode is formed or after the p-side pad electrode is formed.
In this way, the forward voltage Vf can be further reduced.
In this case, the light emitted from the opening of the p-side ohmic electrode may be absorbed by the p-side pad electrode, resulting in a decrease in output. However, the p-side ohmic electrode and the p-type contact of the p-side pad electrode may be reduced. By forming the Rh layer as a layer in contact with the layer, absorption of light by the p-side pad electrode can be suppressed, and a decrease in output can be prevented.
[0044]
【The invention's effect】
As is apparent from the above description, in the nitride semiconductor light emitting device according to the present invention, the p-type nitride semiconductor layer of the light emitting portion is made of at least one selected from the group consisting of Ni and Pt. After the metal layer is formed, the metal layer is removed and the modification process is performed. Therefore, the catalytic action of the Ni layer or the Pt layer causes the p-type contact layer in the light emitting portion to be incorporated during the growth of the nitride semiconductor. The release of the released hydrogen is promoted, and the resistance value can be lowered.
Therefore, according to the nitride semiconductor light emitting device according to the present invention, carriers can be injected more effectively into the active layer located immediately below the light emitting portion, and light is emitted from the active layer immediately below the light emitting portion. Light can be efficiently emitted from the light emitting portion directly above, and a nitride semiconductor light emitting device with high emission efficiency and high efficiency of extracting emitted light can be provided.
[Brief description of the drawings]
FIG. 1 is a plan view of a nitride semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along the line AA ′ in FIG.
FIG. 3 is a partially enlarged sectional view showing a part of the sectional view of FIG. 2 in an enlarged manner.
FIG. 4 is a partially enlarged cross-sectional view showing an enlarged part of a cross section of a nitride semiconductor light emitting device according to a modification of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Substrate, 2 ... Buffer layer, 3 ... n-type contact layer, 4 ... n-type cladding layer, 5 ... Active layer, 6 ... p-type cladding layer, 7 ... p-type contact layer, 7a ... Light emitting part, 70 ... p-side ohmic electrode, 71... p-side pad electrode.

Claims (4)

In a method for manufacturing a nitride semiconductor light emitting device, comprising a contact layer made of a p-type nitride semiconductor, and a p-side ohmic electrode is partially formed on the contact layer except for a light emitting portion.
An electrode forming step of partially forming a p-side ohmic electrode on the p-type contact layer except for the light emitting portion;
Separately from the electrode forming step, a metal layer forming step for forming a metal layer made of a metal selected from the group consisting of Ni and Pt on the surface of the p-type contact layer of the light emitting portion, and a metal for removing the metal layer A layer removal step,
Before the metal layer forming step, the electrode forming step,
In the metal layer forming step, the metal layer is formed so as to cover the light emitting portion and the p-side ohmic electrode.   The method for manufacturing a nitride semiconductor light emitting element according to claim 1, wherein the metal layer removing step is performed so that nickel element or platinum element remains.   The method for manufacturing a nitride semiconductor light emitting element according to claim 1, wherein the metal layer is removed by wet etching in the metal layer removing step.   The method for manufacturing a nitride semiconductor light-emitting element according to claim 1, wherein the p-side ohmic electrode is made of any one of Rh, Ir, Pt, Ru, W, and Ti. .

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