TWI266147B - Novel photosensitive resin compositions - Google Patents

Novel photosensitive resin compositions

Info

Publication number
TWI266147B
TWI266147B TW093106371A TW93106371A TWI266147B TW I266147 B TWI266147 B TW I266147B TW 093106371 A TW093106371 A TW 093106371A TW 93106371 A TW93106371 A TW 93106371A TW I266147 B TWI266147 B TW I266147B
Authority
TW
Taiwan
Prior art keywords
group
divalent
mixtures
heterocyclic
integer
Prior art date
Application number
TW093106371A
Other languages
English (en)
Other versions
TW200426513A (en
Inventor
Ilya Rushkin
Ahmad A Naiini
Richard Hopla
Pamela J Waterson
William D Weber
Original Assignee
Arch Spec Chem Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arch Spec Chem Inc filed Critical Arch Spec Chem Inc
Publication of TW200426513A publication Critical patent/TW200426513A/zh
Application granted granted Critical
Publication of TWI266147B publication Critical patent/TWI266147B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093106371A 2003-03-11 2004-03-10 Novel photosensitive resin compositions TWI266147B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45386903P 2003-03-11 2003-03-11

Publications (2)

Publication Number Publication Date
TW200426513A TW200426513A (en) 2004-12-01
TWI266147B true TWI266147B (en) 2006-11-11

Family

ID=32990831

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106371A TWI266147B (en) 2003-03-11 2004-03-10 Novel photosensitive resin compositions

Country Status (6)

Country Link
US (1) US6929891B2 (zh)
EP (1) EP1609024B1 (zh)
JP (1) JP4317870B2 (zh)
KR (1) KR20060002751A (zh)
TW (1) TWI266147B (zh)
WO (1) WO2004081664A2 (zh)

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JP4464396B2 (ja) * 2003-06-06 2010-05-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規な感光性樹脂組成物
JP3963456B2 (ja) * 2003-06-16 2007-08-22 キヤノン株式会社 感光性樹脂組成物およびこれを用いたインクジェット記録ヘッドおよびその製造方法
TWI360565B (en) * 2003-07-09 2012-03-21 Toray Industries Photosensitive resin precursor composition
JPWO2005101125A1 (ja) * 2004-03-31 2008-03-06 日立化成デュポンマイクロシステムズ株式会社 耐熱感光性樹脂組成物、該組成物を用いたパターン製造方法、及び電子部品
US7638254B2 (en) * 2004-05-07 2009-12-29 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for forming pattern, and electronic part
KR100774672B1 (ko) * 2004-05-07 2007-11-08 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 포지티브형 감광성 수지 조성물, 패턴의 제조방법 및전자부품
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EP1662319A3 (en) * 2004-11-24 2009-05-27 Toray Industries, Inc. Photosensitive resin composition
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7803510B2 (en) * 2005-08-17 2010-09-28 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive polybenzoxazole precursor compositions
TWI407255B (zh) 2005-09-22 2013-09-01 Hitachi Chem Dupont Microsys 負片型感光性樹脂組成物、圖案形成方法以及電子零件
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
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US20100159217A1 (en) * 2006-06-20 2010-06-24 Hitachi Chemical Dupont Microsystems, Ltd Negative-type photosensitive resin composition, method for forming patterns, and electronic parts
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US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
JP5028059B2 (ja) * 2006-09-28 2012-09-19 富士フイルム株式会社 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置
EP2110708B1 (en) * 2007-02-13 2012-12-05 Toray Industries, Inc. Positive-type photosensitive resin composition
WO2008111470A1 (ja) * 2007-03-12 2008-09-18 Hitachi Chemical Dupont Microsystems, Ltd. 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
ATE547743T1 (de) * 2007-03-14 2012-03-15 Fujifilm Corp Lichtempfindliche zusammensetzung und herstellungsverfahren für ein gehärtetes reliefmuster
JP5332326B2 (ja) * 2007-06-18 2013-11-06 住友ベークライト株式会社 半導体装置の製造方法
US8357753B2 (en) * 2007-07-18 2013-01-22 Cda Processing Limited Liability Company Screen-printable encapsulants based on polyhydroxyamides that thermally convert to polybenzoxazoles
JP5176872B2 (ja) * 2007-10-29 2013-04-03 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パタ−ンの製造方法及び電子部品
US8270145B2 (en) * 2007-12-04 2012-09-18 Cda Processing Limited Liability Company Screen-printable encapsulants based on soluble polybenzoxazoles
KR100932765B1 (ko) * 2008-02-28 2009-12-21 한양대학교 산학협력단 폴리이미드-폴리벤조옥사졸 공중합체, 이의 제조방법, 및이를 포함하는 기체 분리막
JP5111223B2 (ja) * 2008-05-01 2013-01-09 旭化成イーマテリアルズ株式会社 ネガ型感光性樹脂組成物
CA2640517A1 (en) * 2008-05-19 2009-11-19 Industry-University Cooperation Foundation, Hanyang University Polyamic acids dope composition, preparation method of hollow fiber using the same and hollow fiber prepared therefrom
US8013103B2 (en) * 2008-10-10 2011-09-06 Industry-University Cooperation Foundation, Hanyang University Polymer compounds and a preparation method thereof
US8487064B2 (en) 2008-10-10 2013-07-16 Industry-University Cooperation Foundation, Hanyang University Polymer compounds and a preparation method thereof
KR101423176B1 (ko) * 2011-11-29 2014-07-25 제일모직 주식회사 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자
KR101432603B1 (ko) 2011-12-29 2014-08-21 제일모직주식회사 감광성 노볼락 수지, 이를 포함하는 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 이를 포함하는 반도체 소자
KR20240073667A (ko) 2022-11-18 2024-05-27 덕산네오룩스 주식회사 벤조옥사졸계 공중합체 및 이를 포함하는 포지티브형 감광성 조성물

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Also Published As

Publication number Publication date
EP1609024B1 (en) 2015-09-30
EP1609024A4 (en) 2009-10-21
EP1609024A2 (en) 2005-12-28
WO2004081664A2 (en) 2004-09-23
TW200426513A (en) 2004-12-01
JP2007524862A (ja) 2007-08-30
JP4317870B2 (ja) 2009-08-19
US6929891B2 (en) 2005-08-16
WO2004081664A3 (en) 2007-02-15
KR20060002751A (ko) 2006-01-09
US20040229166A1 (en) 2004-11-18

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