TWI265378B - Radiation-curing resin composition and preservation method thereof, forming method of curing film, forming method and operating method of pattern, electronic device and optical wave guide - Google Patents

Radiation-curing resin composition and preservation method thereof, forming method of curing film, forming method and operating method of pattern, electronic device and optical wave guide

Info

Publication number
TWI265378B
TWI265378B TW093130320A TW93130320A TWI265378B TW I265378 B TWI265378 B TW I265378B TW 093130320 A TW093130320 A TW 093130320A TW 93130320 A TW93130320 A TW 93130320A TW I265378 B TWI265378 B TW I265378B
Authority
TW
Taiwan
Prior art keywords
forming method
radiation
curing
resin composition
pattern
Prior art date
Application number
TW093130320A
Other languages
English (en)
Other versions
TW200519541A (en
Inventor
Haruaki Sakurai
Kouichi Abe
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200519541A publication Critical patent/TW200519541A/zh
Application granted granted Critical
Publication of TWI265378B publication Critical patent/TWI265378B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Optical Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093130320A 2003-10-07 2004-10-07 Radiation-curing resin composition and preservation method thereof, forming method of curing film, forming method and operating method of pattern, electronic device and optical wave guide TWI265378B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003348160 2003-10-07
JP2004245105 2004-08-25

Publications (2)

Publication Number Publication Date
TW200519541A TW200519541A (en) 2005-06-16
TWI265378B true TWI265378B (en) 2006-11-01

Family

ID=34436893

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130320A TWI265378B (en) 2003-10-07 2004-10-07 Radiation-curing resin composition and preservation method thereof, forming method of curing film, forming method and operating method of pattern, electronic device and optical wave guide

Country Status (6)

Country Link
US (2) US20050239953A1 (zh)
EP (1) EP1672426A4 (zh)
JP (1) JP3821165B2 (zh)
KR (4) KR20080034522A (zh)
TW (1) TWI265378B (zh)
WO (1) WO2005036269A1 (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
JP5000112B2 (ja) * 2005-09-09 2012-08-15 東京応化工業株式会社 ナノインプリントリソグラフィによるパターン形成方法
US7678529B2 (en) * 2005-11-21 2010-03-16 Shin-Etsu Chemical Co., Ltd. Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method
JP5077237B2 (ja) 2006-09-25 2012-11-21 日立化成工業株式会社 感放射線性組成物、シリカ系被膜の形成方法、シリカ系被膜、シリカ系被膜を備える装置及び部材、並びに絶縁膜用感光剤
US8524441B2 (en) * 2007-02-27 2013-09-03 Az Electronic Materials Usa Corp. Silicon-based antireflective coating compositions
WO2010005892A1 (en) * 2008-07-08 2010-01-14 Massachusetts Institute Of Technology Resist composition and lithographic process using said composition
US8158338B2 (en) * 2008-07-08 2012-04-17 Massachusetts Institute Of Technology Resist sensitizer
JP5093004B2 (ja) * 2008-09-02 2012-12-05 Ｊｓｒ株式会社 パターン形成方法
JP5329281B2 (ja) * 2009-03-31 2013-10-30 東京応化工業株式会社 塗布液及び当該塗布液を用いるシリカ系被膜の形成方法
JP5399116B2 (ja) * 2009-04-06 2014-01-29 三洋化成工業株式会社 光塩基発生剤を含有する感光性組成物
JP5568892B2 (ja) * 2009-05-01 2014-08-13 Ｊｓｒ株式会社 ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
US20100291475A1 (en) * 2009-05-12 2010-11-18 Chenghong Li Silicone Coating Compositions
JP2011026495A (ja) * 2009-07-28 2011-02-10 Asahi Kasei E-Materials Corp ポリオルガノシロキサンの保存方法
JP5685407B2 (ja) * 2010-09-07 2015-03-18 株式会社カネカ 塗料用樹脂組成物
US9308726B2 (en) * 2012-02-16 2016-04-12 Xerox Corporation Printhead fluid paths formed with sacrificial material patterned using additive manufacturing processes
TWI567497B (zh) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 負型感光性矽氧烷組成物
TWI567498B (zh) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 負型感光性矽氧烷組成物
US9856400B2 (en) 2012-04-27 2018-01-02 Burning Bush Group, Llc High performance silicon based coating compositions
US10138381B2 (en) 2012-05-10 2018-11-27 Burning Bush Group, Llc High performance silicon based thermal coating compositions
JP6158921B2 (ja) 2012-07-03 2017-07-05 バーニング ブッシュ グループ、 エルエルシー 高性能ケイ素系コーティング組成物
JP6137862B2 (ja) * 2013-02-20 2017-05-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ネガ型感光性シロキサン組成物
US9006355B1 (en) 2013-10-04 2015-04-14 Burning Bush Group, Llc High performance silicon-based compositions
WO2016067525A1 (en) * 2014-10-30 2016-05-06 Canon Kabushiki Kaisha Liquid ejection device, nanoimprinting apparatus, nanoimprinting liquid storage tank, method of manufacturing cured product pattern, method of manufacturing optical component, method of manufacturing circuit board, and method of manufacturing imprinting mold
JP2016164961A (ja) 2014-10-30 2016-09-08 キヤノン株式会社 液体吐出装置、ナノインプリント装置、ナノインプリント用液体収容タンク、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、インプリント用モールドの製造方法
TWI566036B (zh) * 2015-03-31 2017-01-11 奇美實業股份有限公司 感光性聚矽氧烷組成物、保護膜以及具有保護膜的元件
JP6864268B2 (ja) * 2015-06-11 2021-04-28 日産化学株式会社 感放射線性組成物
US20190112469A1 (en) * 2016-03-30 2019-04-18 Zeon Corporation Sealant composition for organic solar cell, sealant for organic solar cell, electrode for organic solar cell and organic solar cell
JP2019095695A (ja) * 2017-11-27 2019-06-20 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ネガ型感光性シロキサン組成物、ならびにそれを用いた硬化膜および電子素子の製造方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04107561A (ja) * 1990-08-29 1992-04-09 Fujitsu Ltd レジスト組成物
JPH06148887A (ja) * 1991-01-28 1994-05-27 Oki Electric Ind Co Ltd 感光性樹脂組成物
JPH04366958A (ja) 1991-06-14 1992-12-18 Oki Electric Ind Co Ltd 放射線感応性樹脂組成物
EP0523957A1 (en) * 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
JPH06148895A (ja) * 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
JP3376629B2 (ja) * 1993-03-19 2003-02-10 東レ株式会社 感光性樹脂組成物およびこれを使用したパターン形成方法
JP3628098B2 (ja) * 1996-03-29 2005-03-09 ダウ コーニング アジア株式会社 放射線硬化性組成物およびこれを用いた硬化物パターンの製造方法
JP3321548B2 (ja) 1996-06-17 2002-09-03 株式会社日立製作所 感光性ポリイミド前駆体組成物、およびそれを用いたパターン形成方法
TW432257B (en) * 1997-01-31 2001-05-01 Shinetsu Chemical Co High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
JP3505990B2 (ja) 1997-01-31 2004-03-15 信越化学工業株式会社 高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法
JP3870471B2 (ja) * 1997-03-05 2007-01-17 東レ株式会社 感光性樹脂組成物、およびこれを使用したパターン形成方法
WO1998040439A1 (en) * 1997-03-14 1998-09-17 Minnesota Mining And Manufacturing Company Cure-on-demand, moisture-curable compositions having reactive silane functionality
TW482817B (en) * 1998-06-18 2002-04-11 Jsr Corp Photosetting compositions and photoset articles
JP2000181069A (ja) 1998-10-05 2000-06-30 Tonen Corp 感光性ポリシラザン組成物及びパタ―ン化されたポリシラザン膜の形成方法
US6210856B1 (en) 1999-01-27 2001-04-03 International Business Machines Corporation Resist composition and process of forming a patterned resist layer on a substrate
US6187505B1 (en) * 1999-02-02 2001-02-13 International Business Machines Corporation Radiation sensitive silicon-containing resists
JP4270708B2 (ja) * 1999-04-23 2009-06-03 富士通株式会社 ケイ素含有ポリマ、その製造方法、それを用いたレジスト組成物、パターン形成方法および電子デバイスの製造方法
US6771019B1 (en) * 1999-05-14 2004-08-03 Ifire Technology, Inc. Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties
JP2001083710A (ja) 1999-09-09 2001-03-30 Jsr Corp 電子部品用材料およびそれを硬化してなる電子部品
JP2001215714A (ja) 2000-02-02 2001-08-10 Fuji Photo Film Co Ltd 感放射線性樹脂組成物
US6873387B2 (en) * 2000-02-28 2005-03-29 Fuji Photo Film Co., Ltd. Antireflection film, sheet polarizer and liquid crystal display device
JP2001288364A (ja) 2000-04-05 2001-10-16 Jsr Corp 放射線硬化性組成物およびそれを用いた光導波路ならびに光導波路の製造方法
JP3414708B2 (ja) 2000-08-31 2003-06-09 クラリアント ジャパン 株式会社 パターン化されたポリシラザン膜の形成方法
JP2002107932A (ja) * 2000-10-03 2002-04-10 Toray Ind Inc 感放射線性組成物
WO2002046841A1 (fr) 2000-12-05 2002-06-13 Kansai Research Institute. Inc. Constituants actifs et compositions de resine photosensible les contenant
EP1229092A3 (en) * 2001-01-31 2004-01-07 JSR Corporation Polymer composition, cured product, laminate and method for producing the cured product
US6653045B2 (en) * 2001-02-16 2003-11-25 International Business Machines Corporation Radiation sensitive silicon-containing negative resists and use thereof
WO2002072705A1 (fr) * 2001-03-13 2002-09-19 Jsr Corporation Composition radiosensible changeant d'indice de refraction et utilisation associee
US6731857B2 (en) * 2001-03-29 2004-05-04 Shipley Company, L.L.C. Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom
JP2003020335A (ja) * 2001-05-01 2003-01-24 Jsr Corp ポリシロキサンおよび感放射線性樹脂組成物
JP3826777B2 (ja) * 2001-12-05 2006-09-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3832572B2 (ja) * 2001-10-09 2006-10-11 信越化学工業株式会社 光硬化性樹脂組成物、パターン形成方法及び基板保護用フィルム
JP4107561B2 (ja) 2002-01-30 2008-06-25 トッパン・フォームズ株式会社 導電回路を有する接着シートの製法
JP2005519345A (ja) 2002-03-04 2005-06-30 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 短波長イメージング用ネガ型フォトレジスト
EP1672427A4 (en) * 2003-10-07 2010-01-13 Hitachi Chemical Co Ltd RADIODURCISSABLE COMPOSITION, METHOD FOR STORING THE SAME, METHOD FOR FORMING CURED FILM, METHOD FOR FORMING PATTERN, METHOD FOR USING PATTERN, ELECTRONIC COMPONENT, AND OPTICAL WAVEGUIDE

Also Published As

Publication number Publication date
KR100869882B1 (ko) 2008-11-24
KR100924621B1 (ko) 2009-11-02
KR20060026838A (ko) 2006-03-24
JPWO2005036269A1 (ja) 2006-12-21
US20050239953A1 (en) 2005-10-27
KR20070073991A (ko) 2007-07-10
KR20080034522A (ko) 2008-04-21
US20090220897A1 (en) 2009-09-03
WO2005036269A1 (ja) 2005-04-21
KR100853054B1 (ko) 2008-08-19
TW200519541A (en) 2005-06-16
JP3821165B2 (ja) 2006-09-13
EP1672426A1 (en) 2006-06-21
EP1672426A4 (en) 2010-02-24
KR20070106045A (ko) 2007-10-31
US8034545B2 (en) 2011-10-11

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