TWI263358B - Gallium nitride-based compound semiconductor light-emitting device - Google Patents
Gallium nitride-based compound semiconductor light-emitting device Download PDFInfo
- Publication number
- TWI263358B TWI263358B TW094102846A TW94102846A TWI263358B TW I263358 B TWI263358 B TW I263358B TW 094102846 A TW094102846 A TW 094102846A TW 94102846 A TW94102846 A TW 94102846A TW I263358 B TWI263358 B TW I263358B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- light
- compound semiconductor
- electrode
- gallium nitride
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 63
- 150000001875 compounds Chemical class 0.000 title claims abstract description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 75
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- -1 gallium nitride compound Chemical class 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 47
- 239000013078 crystal Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 230000035699 permeability Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 305
- 239000010408 film Substances 0.000 description 59
- 238000000034 method Methods 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 239000010931 gold Substances 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- 229910052737 gold Inorganic materials 0.000 description 18
- 238000005253 cladding Methods 0.000 description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007769 metal material Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011799 hole material Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QZLIUFNMYYCGQN-UHFFFAOYSA-N [Ge].[P] Chemical compound [Ge].[P] QZLIUFNMYYCGQN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 210000000576 arachnoid Anatomy 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- VTYDSHHBXXPBBQ-UHFFFAOYSA-N boron germanium Chemical compound [B].[Ge] VTYDSHHBXXPBBQ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- ZKEYULQFFYBZBG-UHFFFAOYSA-N lanthanum carbide Chemical compound [La].[C-]#[C] ZKEYULQFFYBZBG-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004022668 | 2004-01-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200531316A TW200531316A (en) | 2005-09-16 |
| TWI263358B true TWI263358B (en) | 2006-10-01 |
Family
ID=37966351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094102846A TWI263358B (en) | 2004-01-30 | 2005-01-28 | Gallium nitride-based compound semiconductor light-emitting device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20080048172A1 (enExample) |
| JP (1) | JP2005244207A (enExample) |
| TW (1) | TWI263358B (enExample) |
| WO (1) | WO2005074046A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI374552B (en) * | 2004-07-27 | 2012-10-11 | Cree Inc | Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming |
| JP5135686B2 (ja) * | 2005-03-23 | 2013-02-06 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体素子 |
| US7521777B2 (en) * | 2005-03-31 | 2009-04-21 | Showa Denko K.K. | Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
| JP2007287851A (ja) * | 2006-04-14 | 2007-11-01 | Toyoda Gosei Co Ltd | 光通信に用いる発光素子およびこれを用いた通信装置 |
| JP4884826B2 (ja) * | 2006-04-28 | 2012-02-29 | ローム株式会社 | 半導体発光素子 |
| JP4872450B2 (ja) * | 2006-05-12 | 2012-02-08 | 日立電線株式会社 | 窒化物半導体発光素子 |
| KR101316492B1 (ko) | 2007-04-23 | 2013-10-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
| US9082892B2 (en) * | 2007-06-11 | 2015-07-14 | Manulius IP, Inc. | GaN Based LED having reduced thickness and method for making the same |
| CN101971368A (zh) * | 2008-03-13 | 2011-02-09 | 昭和电工株式会社 | 半导体发光元件及其制造方法 |
| JP2013038450A (ja) * | 2008-03-26 | 2013-02-21 | Panasonic Corp | 半導体発光素子およびそれを用いる照明装置 |
| JP5197186B2 (ja) | 2008-06-30 | 2013-05-15 | 株式会社東芝 | 半導体発光装置 |
| JP5115425B2 (ja) * | 2008-09-24 | 2013-01-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| US8455332B2 (en) * | 2009-05-01 | 2013-06-04 | Bridgelux, Inc. | Method and apparatus for manufacturing LED devices using laser scribing |
| JPWO2011071100A1 (ja) * | 2009-12-11 | 2013-04-22 | 豊田合成株式会社 | 半導体発光素子、半導体発光素子を用いた発光装置および電子機器 |
| KR100974777B1 (ko) * | 2009-12-11 | 2010-08-06 | 엘지이노텍 주식회사 | 발광 소자 |
| JP2011159771A (ja) * | 2010-01-29 | 2011-08-18 | Nec Corp | 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置 |
| KR20140074516A (ko) * | 2012-12-10 | 2014-06-18 | 서울바이오시스 주식회사 | 질화갈륨계 반도체층 성장 방법 및 발광 소자 제조 방법 |
| JP2013062535A (ja) * | 2012-12-18 | 2013-04-04 | Toshiba Corp | 半導体発光装置及びその製造方法 |
| WO2014175564A1 (ko) * | 2013-04-22 | 2014-10-30 | 한국산업기술대학교산학협력단 | 수직형 발광다이오드 제조 방법, 수직형 발광다이오드와 자외선 발광다이오드 제조 방법 및 자외선 발광다이오드 |
| KR102223037B1 (ko) | 2014-10-01 | 2021-03-05 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
| TWI619854B (zh) * | 2016-06-14 | 2018-04-01 | 光鋐科技股份有限公司 | 在氮化鋁鎵磊晶層上成長氮化鎵的方法 |
| JP7470607B2 (ja) * | 2020-09-18 | 2024-04-18 | 旭化成エレクトロニクス株式会社 | 窒化物半導体素子 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3700872B2 (ja) * | 1995-12-28 | 2005-09-28 | シャープ株式会社 | 窒化物系ｉｉｉ−ｖ族化合物半導体装置およびその製造方法 |
| JP3424465B2 (ja) * | 1996-11-15 | 2003-07-07 | 日亜化学工業株式会社 | 窒化物半導体素子及び窒化物半導体の成長方法 |
| US6121634A (en) * | 1997-02-21 | 2000-09-19 | Kabushiki Kaisha Toshiba | Nitride semiconductor light emitting device and its manufacturing method |
| JP3769872B2 (ja) * | 1997-05-06 | 2006-04-26 | ソニー株式会社 | 半導体発光素子 |
| US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
| US6608330B1 (en) * | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
| US6153894A (en) * | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
| JP3567790B2 (ja) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| JP3719047B2 (ja) * | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| JP3864670B2 (ja) * | 2000-05-23 | 2007-01-10 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法 |
| JP3803696B2 (ja) * | 2000-11-21 | 2006-08-02 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| US6816525B2 (en) * | 2000-09-22 | 2004-11-09 | Andreas Stintz | Quantum dot lasers |
| EP1406314B1 (en) * | 2001-07-12 | 2015-08-19 | Nichia Corporation | Semiconductor device |
| JP3772707B2 (ja) * | 2001-08-10 | 2006-05-10 | 豊田合成株式会社 | ３族窒化物化合物半導体発光素子の製造方法 |
| JP3785970B2 (ja) * | 2001-09-03 | 2006-06-14 | 日本電気株式会社 | Ｉｉｉ族窒化物半導体素子の製造方法 |
| JP2003133589A (ja) * | 2001-10-23 | 2003-05-09 | Mitsubishi Cable Ind Ltd | ＧａＮ系半導体発光ダイオード |
| JP2003243704A (ja) * | 2002-02-07 | 2003-08-29 | Lumileds Lighting Us Llc | 発光半導体デバイス及び方法 |
| US6881983B2 (en) * | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
| US6995389B2 (en) * | 2003-06-18 | 2006-02-07 | Lumileds Lighting, U.S., Llc | Heterostructures for III-nitride light emitting devices |
| TWI270217B (en) * | 2004-02-24 | 2007-01-01 | Showa Denko Kk | Gallium nitride-based compound semiconductor multilayer structure and production method thereof |
-
2005
- 2005-01-27 JP JP2005020219A patent/JP2005244207A/ja active Pending
- 2005-01-28 US US10/586,909 patent/US20080048172A1/en not_active Abandoned
- 2005-01-28 TW TW094102846A patent/TWI263358B/zh not_active IP Right Cessation
- 2005-01-28 WO PCT/JP2005/001645 patent/WO2005074046A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TW200531316A (en) | 2005-09-16 |
| JP2005244207A (ja) | 2005-09-08 |
| US20080048172A1 (en) | 2008-02-28 |
| WO2005074046A1 (en) | 2005-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI263358B (en) | Gallium nitride-based compound semiconductor light-emitting device | |
| US8546819B2 (en) | Light emitting device and fabrication method thereof | |
| CN102484185B (zh) | 半导体发光二极管及其制造方法 | |
| CN102047454B (zh) | 发光器件及其制造方法 | |
| KR100706796B1 (ko) | 질화물계 탑에미트형 발광소자 및 그 제조 방법 | |
| US20140217457A1 (en) | Light-emitting element chip and manufacturing method therefor | |
| JP2008047860A (ja) | 表面凹凸の形成方法及びそれを利用した窒化ガリウム系発光ダイオード素子の製造方法 | |
| KR20110052131A (ko) | 발광소자 및 그 제조방법 | |
| TWI798695B (zh) | 紫外led及其製作方法 | |
| EP1677365A2 (en) | Semiconductor light emitting diode having textured structure and method of manufacturing the same | |
| KR101007078B1 (ko) | 발광소자 및 그 제조방법 | |
| TWI260099B (en) | Positive electrode structure and gallium nitride-based compound semiconductor light-emitting device | |
| US20090020771A1 (en) | III-Nitride Semiconductor Light Emitting Device And Method For Manufacturing The Same | |
| KR101707358B1 (ko) | 질화물 발광 소자 및 그 제조 방법 | |
| KR100638731B1 (ko) | 플립칩용 질화물 반도체 발광소자 및 그 제조방법 | |
| KR101068864B1 (ko) | 반도체 발광소자 및 그 제조방법 | |
| KR101824322B1 (ko) | 질화갈륨계 고효율 발광다이오드 및 그의 제조방법 | |
| JP2014116412A (ja) | 半導体発光素子 | |
| KR101134840B1 (ko) | 발광 소자 및 그 제조방법 | |
| WO2008001990A1 (en) | Iii-nitride semiconductor light emitting device and method for manufacturing the same | |
| JP2006245555A (ja) | 透光性電極 | |
| JP2007036078A (ja) | ｐｎ接合型発光ダイオード | |
| JP2006013475A (ja) | 正極構造及び窒化ガリウム系化合物半導体発光素子 | |
| KR101133412B1 (ko) | 트렌치가 구비된 기판 상에 형성된 발광다이오드 | |
| KR100983831B1 (ko) | Ⅲ-질화물 반도체 발광소자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |