JP2005244207A - 窒化ガリウム系化合物半導体発光素子 - Google Patents

窒化ガリウム系化合物半導体発光素子 Download PDF

Info

Publication number
JP2005244207A
JP2005244207A JP2005020219A JP2005020219A JP2005244207A JP 2005244207 A JP2005244207 A JP 2005244207A JP 2005020219 A JP2005020219 A JP 2005020219A JP 2005020219 A JP2005020219 A JP 2005020219A JP 2005244207 A JP2005244207 A JP 2005244207A
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
gallium nitride
light emitting
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005020219A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005244207A5 (enExample
Inventor
Noritaka Muraki
典孝 村木
Munetaka Watanabe
宗隆 渡邉
Hisayuki Miki
久幸 三木
Yasushi Ono
泰 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2005020219A priority Critical patent/JP2005244207A/ja
Publication of JP2005244207A publication Critical patent/JP2005244207A/ja
Publication of JP2005244207A5 publication Critical patent/JP2005244207A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials

Landscapes

  • Led Devices (AREA)
JP2005020219A 2004-01-30 2005-01-27 窒化ガリウム系化合物半導体発光素子 Pending JP2005244207A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005020219A JP2005244207A (ja) 2004-01-30 2005-01-27 窒化ガリウム系化合物半導体発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004022668 2004-01-30
JP2005020219A JP2005244207A (ja) 2004-01-30 2005-01-27 窒化ガリウム系化合物半導体発光素子

Publications (2)

Publication Number Publication Date
JP2005244207A true JP2005244207A (ja) 2005-09-08
JP2005244207A5 JP2005244207A5 (enExample) 2008-01-31

Family

ID=37966351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005020219A Pending JP2005244207A (ja) 2004-01-30 2005-01-27 窒化ガリウム系化合物半導体発光素子

Country Status (4)

Country Link
US (1) US20080048172A1 (enExample)
JP (1) JP2005244207A (enExample)
TW (1) TWI263358B (enExample)
WO (1) WO2005074046A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287851A (ja) * 2006-04-14 2007-11-01 Toyoda Gosei Co Ltd 光通信に用いる発光素子およびこれを用いた通信装置
JP2007299848A (ja) * 2006-04-28 2007-11-15 Rohm Co Ltd 半導体発光素子
WO2011071100A1 (ja) * 2009-12-11 2011-06-16 昭和電工株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
JP2011159771A (ja) * 2010-01-29 2011-08-18 Nec Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置
JP2013038450A (ja) * 2008-03-26 2013-02-21 Panasonic Corp 半導体発光素子およびそれを用いる照明装置
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法
US8648377B2 (en) 2008-06-30 2014-02-11 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US9502605B2 (en) 2014-10-01 2016-11-22 Samsung Electronics Co., Ltd. Method of fabricating semiconductor light emitting device
TWI619854B (zh) * 2016-06-14 2018-04-01 光鋐科技股份有限公司 在氮化鋁鎵磊晶層上成長氮化鎵的方法
JP2022051302A (ja) * 2020-09-18 2022-03-31 旭化成エレクトロニクス株式会社 窒化物半導体素子

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI374552B (en) * 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
JP5135686B2 (ja) * 2005-03-23 2013-02-06 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子
US7521777B2 (en) * 2005-03-31 2009-04-21 Showa Denko K.K. Gallium nitride-based compound semiconductor multilayer structure and production method thereof
JP4872450B2 (ja) * 2006-05-12 2012-02-08 日立電線株式会社 窒化物半導体発光素子
KR101316492B1 (ko) 2007-04-23 2013-10-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
US9082892B2 (en) * 2007-06-11 2015-07-14 Manulius IP, Inc. GaN Based LED having reduced thickness and method for making the same
CN101971368A (zh) * 2008-03-13 2011-02-09 昭和电工株式会社 半导体发光元件及其制造方法
JP5115425B2 (ja) * 2008-09-24 2013-01-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
US8455332B2 (en) * 2009-05-01 2013-06-04 Bridgelux, Inc. Method and apparatus for manufacturing LED devices using laser scribing
KR100974777B1 (ko) * 2009-12-11 2010-08-06 엘지이노텍 주식회사 발광 소자
KR20140074516A (ko) * 2012-12-10 2014-06-18 서울바이오시스 주식회사 질화갈륨계 반도체층 성장 방법 및 발광 소자 제조 방법
WO2014175564A1 (ko) * 2013-04-22 2014-10-30 한국산업기술대학교산학협력단 수직형 발광다이오드 제조 방법, 수직형 발광다이오드와 자외선 발광다이오드 제조 방법 및 자외선 발광다이오드

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349337A (ja) * 1999-06-07 2000-12-15 Nichia Chem Ind Ltd 窒化物半導体素子
JP2001332762A (ja) * 2000-05-23 2001-11-30 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2002094112A (ja) * 2001-08-10 2002-03-29 Toyoda Gosei Co Ltd ３族窒化物化合物半導体発光素子の製造方法
JP2002223042A (ja) * 2000-11-21 2002-08-09 Nichia Chem Ind Ltd 窒化物半導体素子
WO2003007390A1 (fr) * 2001-07-12 2003-01-23 Nichia Corporation Dispositif semi-conducteur
JP2003243704A (ja) * 2002-02-07 2003-08-29 Lumileds Lighting Us Llc 発光半導体デバイス及び方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3700872B2 (ja) * 1995-12-28 2005-09-28 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置およびその製造方法
JP3424465B2 (ja) * 1996-11-15 2003-07-07 日亜化学工業株式会社 窒化物半導体素子及び窒化物半導体の成長方法
US6121634A (en) * 1997-02-21 2000-09-19 Kabushiki Kaisha Toshiba Nitride semiconductor light emitting device and its manufacturing method
JP3769872B2 (ja) * 1997-05-06 2006-04-26 ソニー株式会社 半導体発光素子
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6608330B1 (en) * 1998-09-21 2003-08-19 Nichia Corporation Light emitting device
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
JP3567790B2 (ja) * 1999-03-31 2004-09-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
US6816525B2 (en) * 2000-09-22 2004-11-09 Andreas Stintz Quantum dot lasers
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法
JP2003133589A (ja) * 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光ダイオード
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6995389B2 (en) * 2003-06-18 2006-02-07 Lumileds Lighting, U.S., Llc Heterostructures for III-nitride light emitting devices
TWI270217B (en) * 2004-02-24 2007-01-01 Showa Denko Kk Gallium nitride-based compound semiconductor multilayer structure and production method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349337A (ja) * 1999-06-07 2000-12-15 Nichia Chem Ind Ltd 窒化物半導体素子
JP2001332762A (ja) * 2000-05-23 2001-11-30 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2002223042A (ja) * 2000-11-21 2002-08-09 Nichia Chem Ind Ltd 窒化物半導体素子
WO2003007390A1 (fr) * 2001-07-12 2003-01-23 Nichia Corporation Dispositif semi-conducteur
JP2002094112A (ja) * 2001-08-10 2002-03-29 Toyoda Gosei Co Ltd ３族窒化物化合物半導体発光素子の製造方法
JP2003243704A (ja) * 2002-02-07 2003-08-29 Lumileds Lighting Us Llc 発光半導体デバイス及び方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287851A (ja) * 2006-04-14 2007-11-01 Toyoda Gosei Co Ltd 光通信に用いる発光素子およびこれを用いた通信装置
JP2007299848A (ja) * 2006-04-28 2007-11-15 Rohm Co Ltd 半導体発光素子
JP2013038450A (ja) * 2008-03-26 2013-02-21 Panasonic Corp 半導体発光素子およびそれを用いる照明装置
US8648377B2 (en) 2008-06-30 2014-02-11 Kabushiki Kaisha Toshiba Semiconductor light-emitting device
US8637888B2 (en) 2009-12-11 2014-01-28 Toyoda Gosei Co., Ltd. Semiconductor light emitting element, light emitting device using semiconductor light emitting element, and electronic apparatus
WO2011071100A1 (ja) * 2009-12-11 2011-06-16 昭和電工株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
JPWO2011071100A1 (ja) * 2009-12-11 2013-04-22 豊田合成株式会社 半導体発光素子、半導体発光素子を用いた発光装置および電子機器
JP2011159771A (ja) * 2010-01-29 2011-08-18 Nec Corp 窒化物半導体発光素子、窒化物半導体発光素子の製造方法、および電子装置
JP2013062535A (ja) * 2012-12-18 2013-04-04 Toshiba Corp 半導体発光装置及びその製造方法
US9502605B2 (en) 2014-10-01 2016-11-22 Samsung Electronics Co., Ltd. Method of fabricating semiconductor light emitting device
TWI619854B (zh) * 2016-06-14 2018-04-01 光鋐科技股份有限公司 在氮化鋁鎵磊晶層上成長氮化鎵的方法
JP2022051302A (ja) * 2020-09-18 2022-03-31 旭化成エレクトロニクス株式会社 窒化物半導体素子
JP7470607B2 (ja) 2020-09-18 2024-04-18 旭化成エレクトロニクス株式会社 窒化物半導体素子

Also Published As

Publication number Publication date
TW200531316A (en) 2005-09-16
TWI263358B (en) 2006-10-01
US20080048172A1 (en) 2008-02-28
WO2005074046A1 (en) 2005-08-11

Similar Documents

Publication Publication Date Title
KR100706796B1 (ko) 질화물계 탑에미트형 발광소자 및 그 제조 방법
US8513694B2 (en) Nitride semiconductor device and manufacturing method of the device
JP2005244207A (ja) 窒化ガリウム系化合物半導体発光素子
JP2004006991A (ja) 窒化物半導体素子
JP2005277374A (ja) Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2008288248A (ja) 半導体発光素子
JP2010098234A (ja) 半導体発光素子及び半導体発光素子の製造方法
JP2003046127A (ja) 窒化物系半導体発光素子
US20130134475A1 (en) Semiconductor light emitting device
CN103066176A (zh) 氮化物半导体发光装置
JP2007157853A (ja) 半導体発光素子およびその製造方法
JP2007294578A (ja) 窒化ガリウム系化合物半導体発光素子の製造方法及び窒化ガリウム系化合物半導体発光素子、並びにランプ
JP2007157852A (ja) 半導体発光素子およびその製造方法
TWI260099B (en) Positive electrode structure and gallium nitride-based compound semiconductor light-emitting device
JP2012084667A (ja) 化合物半導体発光素子及びその製造方法、ランプ、電子機器並びに機械装置
JP4787562B2 (ja) ｐｎ接合型発光ダイオード
JP2011082248A (ja) 半導体発光素子及びその製造方法、並びにランプ
JP2005340762A (ja) Ｉｉｉ族窒化物半導体発光素子
JP2006024913A (ja) 窒化ガリウム系化合物半導体発光素子用透光性正極および発光素子
JP2006013463A (ja) Ｉｉｉ族窒化物半導体発光素子
JP4787561B2 (ja) ｐｎ接合型発光ダイオード
KR20120067983A (ko) 발광 다이오드
JP4918235B2 (ja) ｐｎ接合型化合物半導体発光ダイオード
JP2005340789A (ja) Ｉｉｉ族窒化物半導体発光素子
KR100891827B1 (ko) 수직구조 질화물 반도체 발광 소자 및 제조방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071210

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100709

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100827

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20100827

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101005

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110222