TWI260710B - Plasma processing method and plasma processing device - Google Patents

Plasma processing method and plasma processing device Download PDF

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Publication number
TWI260710B
TWI260710B TW094123563A TW94123563A TWI260710B TW I260710 B TWI260710 B TW I260710B TW 094123563 A TW094123563 A TW 094123563A TW 94123563 A TW94123563 A TW 94123563A TW I260710 B TWI260710 B TW I260710B
Authority
TW
Taiwan
Prior art keywords
electrode
wafer
peripheral portion
frequency bias
plasma processing
Prior art date
Application number
TW094123563A
Other languages
English (en)
Chinese (zh)
Other versions
TW200633047A (en
Inventor
Eiji Ikegami
Kunihiko Koroyasu
Tadamitsu Kanekiyo
Masahiro Sumiya
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Application granted granted Critical
Publication of TWI260710B publication Critical patent/TWI260710B/zh
Publication of TW200633047A publication Critical patent/TW200633047A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW094123563A 2005-03-07 2005-07-12 Plasma processing method and plasma processing device TWI260710B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005062842A JP4566789B2 (ja) 2005-03-07 2005-03-07 プラズマ処理方法およびプラズマ処理装置

Publications (2)

Publication Number Publication Date
TWI260710B true TWI260710B (en) 2006-08-21
TW200633047A TW200633047A (en) 2006-09-16

Family

ID=36942996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094123563A TWI260710B (en) 2005-03-07 2005-07-12 Plasma processing method and plasma processing device

Country Status (4)

Country Link
US (1) US20060196605A1 (enExample)
JP (1) JP4566789B2 (enExample)
KR (1) KR100794692B1 (enExample)
TW (1) TWI260710B (enExample)

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US7938931B2 (en) * 2006-05-24 2011-05-10 Lam Research Corporation Edge electrodes with variable power
US9184043B2 (en) * 2006-05-24 2015-11-10 Lam Research Corporation Edge electrodes with dielectric covers
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
JP4988402B2 (ja) * 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US8563619B2 (en) * 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
JP5371466B2 (ja) * 2009-02-12 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
JP5313375B2 (ja) * 2012-02-20 2013-10-09 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP5970268B2 (ja) * 2012-07-06 2016-08-17 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
WO2014149259A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Apparatus and method for tuning a plasma profile using a tuning ring in a processing chamber
US10032608B2 (en) 2013-03-27 2018-07-24 Applied Materials, Inc. Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
JP6573325B2 (ja) * 2013-12-17 2019-09-11 東京エレクトロン株式会社 プラズマ密度を制御するシステムおよび方法
KR102568804B1 (ko) * 2014-12-31 2023-08-21 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US9496148B1 (en) 2015-09-10 2016-11-15 International Business Machines Corporation Method of charge controlled patterning during reactive ion etching
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101909479B1 (ko) * 2016-10-06 2018-10-19 세메스 주식회사 기판 지지 유닛, 그를 포함하는 기판 처리 장치, 그리고 그 제어 방법
US11056325B2 (en) * 2017-12-20 2021-07-06 Applied Materials, Inc. Methods and apparatus for substrate edge uniformity
JP7018331B2 (ja) 2018-02-23 2022-02-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7055040B2 (ja) 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
CN110323117B (zh) 2018-03-28 2024-06-21 三星电子株式会社 等离子体处理设备
US11955314B2 (en) * 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
KR102841591B1 (ko) * 2019-01-11 2025-08-01 도쿄엘렉트론가부시키가이샤 처리 방법 및 플라즈마 처리 장치
JP7514913B2 (ja) * 2019-08-01 2024-07-11 ラム リサーチ コーポレーション エッジリングポケットを洗浄するためのシステムおよび方法
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
JP7450427B2 (ja) 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
TWI767655B (zh) * 2020-05-01 2022-06-11 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
KR102890592B1 (ko) * 2020-06-26 2025-11-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP7661109B2 (ja) * 2020-07-31 2025-04-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN113013063B (zh) * 2021-02-23 2024-08-02 绍兴同芯成集成电路有限公司 一种基于硅基载板的化合物半导体晶圆正面加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265820A (ja) * 1985-05-21 1986-11-25 Anelva Corp プラズマ処理装置
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JP2000164583A (ja) * 1998-06-24 2000-06-16 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
JP2001057363A (ja) * 1999-08-19 2001-02-27 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
US6620736B2 (en) * 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP4456412B2 (ja) * 2004-05-27 2010-04-28 株式会社日立製作所 プラズマ処理装置

Also Published As

Publication number Publication date
TW200633047A (en) 2006-09-16
KR20060097528A (ko) 2006-09-14
KR100794692B1 (ko) 2008-01-14
JP4566789B2 (ja) 2010-10-20
JP2006245510A (ja) 2006-09-14
US20060196605A1 (en) 2006-09-07

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