KR100794692B1 - 플라즈마처리방법 및 플라즈마처리장치 - Google Patents

플라즈마처리방법 및 플라즈마처리장치 Download PDF

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Publication number
KR100794692B1
KR100794692B1 KR1020050074118A KR20050074118A KR100794692B1 KR 100794692 B1 KR100794692 B1 KR 100794692B1 KR 1020050074118 A KR1020050074118 A KR 1020050074118A KR 20050074118 A KR20050074118 A KR 20050074118A KR 100794692 B1 KR100794692 B1 KR 100794692B1
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South Korea
Prior art keywords
electrode
high frequency
wafer
frequency bias
bias voltage
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Expired - Fee Related
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KR1020050074118A
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English (en)
Korean (ko)
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KR20060097528A (ko
Inventor
에이지 이케가미
구니히코 고로야스
다다미츠 가네키요
마사히로 스미야
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가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20060097528A publication Critical patent/KR20060097528A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020050074118A 2005-03-07 2005-08-12 플라즈마처리방법 및 플라즈마처리장치 Expired - Fee Related KR100794692B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005062842A JP4566789B2 (ja) 2005-03-07 2005-03-07 プラズマ処理方法およびプラズマ処理装置
JPJP-P-2005-00062842 2005-03-07

Publications (2)

Publication Number Publication Date
KR20060097528A KR20060097528A (ko) 2006-09-14
KR100794692B1 true KR100794692B1 (ko) 2008-01-14

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Family Applications (1)

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KR1020050074118A Expired - Fee Related KR100794692B1 (ko) 2005-03-07 2005-08-12 플라즈마처리방법 및 플라즈마처리장치

Country Status (4)

Country Link
US (1) US20060196605A1 (enExample)
JP (1) JP4566789B2 (enExample)
KR (1) KR100794692B1 (enExample)
TW (1) TWI260710B (enExample)

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US7938931B2 (en) * 2006-05-24 2011-05-10 Lam Research Corporation Edge electrodes with variable power
US9184043B2 (en) * 2006-05-24 2015-11-10 Lam Research Corporation Edge electrodes with dielectric covers
US8941037B2 (en) * 2006-12-25 2015-01-27 Tokyo Electron Limited Substrate processing apparatus, focus ring heating method, and substrate processing method
JP4988402B2 (ja) * 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US8563619B2 (en) * 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
JP5371466B2 (ja) * 2009-02-12 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5819154B2 (ja) * 2011-10-06 2015-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置
JP5313375B2 (ja) * 2012-02-20 2013-10-09 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリングとフォーカスリング部品
JP5970268B2 (ja) * 2012-07-06 2016-08-17 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
WO2014149259A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Apparatus and method for tuning a plasma profile using a tuning ring in a processing chamber
US10032608B2 (en) 2013-03-27 2018-07-24 Applied Materials, Inc. Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
JP6573325B2 (ja) * 2013-12-17 2019-09-11 東京エレクトロン株式会社 プラズマ密度を制御するシステムおよび方法
KR102568804B1 (ko) * 2014-12-31 2023-08-21 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
US9496148B1 (en) 2015-09-10 2016-11-15 International Business Machines Corporation Method of charge controlled patterning during reactive ion etching
JP6595335B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101909479B1 (ko) * 2016-10-06 2018-10-19 세메스 주식회사 기판 지지 유닛, 그를 포함하는 기판 처리 장치, 그리고 그 제어 방법
US11056325B2 (en) * 2017-12-20 2021-07-06 Applied Materials, Inc. Methods and apparatus for substrate edge uniformity
JP7018331B2 (ja) 2018-02-23 2022-02-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7055040B2 (ja) 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
CN110323117B (zh) 2018-03-28 2024-06-21 三星电子株式会社 等离子体处理设备
US11955314B2 (en) * 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
KR102841591B1 (ko) * 2019-01-11 2025-08-01 도쿄엘렉트론가부시키가이샤 처리 방법 및 플라즈마 처리 장치
JP7514913B2 (ja) * 2019-08-01 2024-07-11 ラム リサーチ コーポレーション エッジリングポケットを洗浄するためのシステムおよび方法
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
JP7344821B2 (ja) * 2020-03-17 2023-09-14 東京エレクトロン株式会社 プラズマ処理装置
JP7450427B2 (ja) 2020-03-25 2024-03-15 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
TWI767655B (zh) * 2020-05-01 2022-06-11 日商東京威力科創股份有限公司 蝕刻裝置及蝕刻方法
KR102890592B1 (ko) * 2020-06-26 2025-11-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP7661109B2 (ja) * 2020-07-31 2025-04-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN113013063B (zh) * 2021-02-23 2024-08-02 绍兴同芯成集成电路有限公司 一种基于硅基载板的化合物半导体晶圆正面加工方法

Citations (1)

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Publication number Priority date Publication date Assignee Title
US6620736B2 (en) * 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing

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JPS61265820A (ja) * 1985-05-21 1986-11-25 Anelva Corp プラズマ処理装置
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JP2000164583A (ja) * 1998-06-24 2000-06-16 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
JP2001057363A (ja) * 1999-08-19 2001-02-27 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP4456412B2 (ja) * 2004-05-27 2010-04-28 株式会社日立製作所 プラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620736B2 (en) * 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing

Also Published As

Publication number Publication date
TW200633047A (en) 2006-09-16
KR20060097528A (ko) 2006-09-14
JP4566789B2 (ja) 2010-10-20
TWI260710B (en) 2006-08-21
JP2006245510A (ja) 2006-09-14
US20060196605A1 (en) 2006-09-07

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