TWI258515B - Method of cleaning chamber of vacuum evaporation apparatus for production of organic EL element - Google Patents

Method of cleaning chamber of vacuum evaporation apparatus for production of organic EL element Download PDF

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Publication number
TWI258515B
TWI258515B TW092116551A TW92116551A TWI258515B TW I258515 B TWI258515 B TW I258515B TW 092116551 A TW092116551 A TW 092116551A TW 92116551 A TW92116551 A TW 92116551A TW I258515 B TWI258515 B TW I258515B
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Taiwan
Prior art keywords
compound
fluorine
containing alcohol
organic
cleaning
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TW092116551A
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English (en)
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TW200406499A (en
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Nobuya Hayashi
Shinichiro Narui
Hidekazu Okamoto
Masaaki Tsuzaki
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Asahi Glass Co Ltd
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Publication of TW200406499A publication Critical patent/TW200406499A/zh
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C11D7/30—Halogenated hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5018—Halogenated solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/48—Regeneration of cleaning solutions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Description

1258515 (1) 玖、發明說明 【發明所屬之技術領域】 有關有機EL元件製造用蒸鍍裝置室內之洗淨方法。 【先前技術】 有關有機E L元件之製造，有機化合物（以下以原料 稱之）薄膜之形成方法，爲眾知之真空蒸鍍法。真空蒸鍍 法係於真空槽內適當的組合蒸發源及薄膜用基板，形成薄 膜的方法’有旋轉塗覆法或浸漬法等的濕式製程具有容易 獲得均質薄膜的利點。已知之真空蒸鍍法係於比較高電阻 的金屬容器（金屬盤）對附著原料之該金屬容器通以電流 ’使該金屬器發熱蒸發原料，於薄膜用基板表面形成原料 的薄膜之電阻加熱蒸鍍法，或以電子光束或雷射光束照射 原料’以該光束之能量使原料蒸發，於薄膜用基板表面形 成原料的薄膜之電子光束·雷射光束鑛法。其中電阻加熱 蒸鍍法，以蒸鍍裝置構成簡便，價格低能實現良質薄膜的 形成而廣泛普及。 使用上述蒸鍍法之裝置時，蒸發之原料有一部份堆積 於有機EL元件用基板的表面，殘留之原料蓄積於裝置之 室內表面及配置於該室內的構件之表面。因此，形成有機 EL元件用基板的表面之薄膜原料，爲全原料之一部份’ 而大部份之原料附著於室內表面等，有沒被利用或廢棄的 問題。有機EL元件之原料大都爲高價的化合物，原料不 有效率的使用則成爲高製造成本的問題。又，該室內使用 -5- 1258515 (6) 步驟3 :回收之含A 1 q 3之含氟醇以減壓蒸發含氟醇’ 濃縮析出A 1 q 3。 步驟4 :析出之A1 q3以對A1 q3具適度溶解能的溶劑 ，例如二氯甲烷溶解，得到a 1 q 3溶液。 步驟5 :冷卻A1 q 3溶液，析出溶解之A1 q3 °冷卻溫 度以-3 0〜2 0 °C爲理想，更理想爲-1 5〜1 8 °C。冷卻時間 理想爲3 0分〜2小時，更理想爲4 5分〜1小時3 Q分。 步驟6 :過濾析出之Alq3，以乾燥回收Alqs。乾燥溫 度理想爲4 0〜6 0。(：，以4 5〜5 5 °C爲更理想。乾燥時間以 1 0〜4 0小時爲理想，以1 2〜3 5小時爲更理想。 【實施方式】 <實施例〉 [例1] 有關含氟醇之Alq3溶解性依下述方法確認。
於 25°C，以 1 mg Alq3 與 3 mL 之 H(CF2)4CH2OH 混 合調製成混合液。以目視確認混合狀態，確認 Alq3是否 全溶解。 [例2] 有機薄膜形成裝置室內表面及罩網等的冶具的表面附 著之有機EL元件用材料之三（8-羥基D奎啉）鋁鹽（A1q3) 之有機薄膜形成裝置室內表面及罩網等的構件表面，由該 蒸鍍裝置內之噴霧嘴以5 0 0 m L / m i η噴射η ( C F 2) 4 C Η 2 Ο Η -10-

Claims (1)

1258515 (1) 拾、申請專利範圍 第92 1 1 65 5 1號專利申請案 中文申請專利範圍修正本 民國95年4月19日修正 1·一種有機EL元件製造用蒸鍍裝置室內之洗淨方法 ，其係裝置之室內，在基板表面蒸鍍由8-羥基喹啉或其 衍生物的金屬錯合物所成之化合物之有機EL元件製造用 蒸鍍裝置室內之洗淨方法，其特徵係含有： 於基材表面蒸鍍上述化合物，同時，附著上述化合物 之室內表面及配置於室內之構件的表面以含氟醇洗淨，除 去附著之上述化合物的步驟；及 回收含有上述化合物之含氟醇之步驟。 2·如申請專利範圍第1項之洗淨方法，其中8-羥基D| 啉或其衍生物的金屬錯合物所成之化合物爲三（8 -羥基d奎 啉）鋁鹽。 3 ·如申請專利範圍第1項或第2項之洗淨方法，其中 含氟醇爲式1所示之化合物； RfCHX-〇H · · · · ·式 1 (但是’式1之X爲氫原子、原子或三氟甲基，Rf 爲氟原子或碳數1〜4之多氟烷基）。 4 ·如申請專利範圍第1或2項之洗淨方法，其中含氣 醇之溶解度參數爲8以上20以下。 5 ·如申請專利範圍第1項或第2項之洗淨方法，其中 含氟醇爲2,2,3,3-四氟丙醇、2,2,3,3,4,4,5,5-八氟戊醇、 1258515 (2) 2,2,3,3,4,4-六氟丁醇、或1，1，1，3,3,3-六氟異丙醇。 6 ·如申請專利範圍第1或 2項中之洗淨方法，其係 具有將含有回收之上述有機化合物之含氟醇，分離成上述 化合物與含氟醇的步驟。
-2-
TW092116551A 2002-06-19 2003-06-18 Method of cleaning chamber of vacuum evaporation apparatus for production of organic EL element TWI258515B (en)

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US (1) US7037380B2 (zh)
EP (1) EP1514918B1 (zh)
JP (1) JP4389784B2 (zh)
CN (1) CN1307297C (zh)
AT (1) ATE342339T1 (zh)
AU (1) AU2003244296A1 (zh)
CA (1) CA2489616C (zh)
DE (1) DE60309036T2 (zh)
TW (1) TWI258515B (zh)
WO (1) WO2004000987A1 (zh)

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KR20080108510A (ko) 2006-04-05 2008-12-15 아사히 가라스 가부시키가이샤 디바이스 기판의 세정 방법
JP2012131985A (ja) * 2010-12-02 2012-07-12 Fujifilm Corp 硬化物製造用キット及び硬化物製造用組成物、並びにその使用
JP2015108041A (ja) * 2013-12-03 2015-06-11 ダイキン工業株式会社 洗浄用組成物
WO2017187906A1 (ja) * 2016-04-25 2017-11-02 住友化学株式会社 組成物
CN110431214B (zh) * 2017-03-23 2023-07-04 柯尼卡美能达株式会社 有机电致发光元件用材料的回收方法和有机电致发光元件用材料的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59157196A (ja) 1983-02-28 1984-09-06 ダイキン工業株式会社 固定用ワックスの除去方法
JPH02261900A (ja) * 1989-03-27 1990-10-24 Pcr Inc 半導体ウエファ等のクリーニング用溶剤組成物およびそのクリーニング方法
DE4227130A1 (de) * 1992-08-17 1994-02-24 Solvay Fluor & Derivate Zusammensetzungen aus 1-Chlor-2,2,2-trifluorethyldifluormethylether und partiell fluorierten Alkanolen
JP2763083B2 (ja) * 1993-06-01 1998-06-11 工業技術院長 フッ素系洗浄溶剤組成物
JPH0764284A (ja) * 1993-08-24 1995-03-10 Sumitomo Chem Co Ltd 溶剤、溶液型キノンジアジド系感光剤、フォトレジスト組成物および洗浄液
GB9826406D0 (en) * 1998-12-02 1999-01-27 South Bank Univ Entpr Ltd Quinolates
JP3900769B2 (ja) * 1999-01-26 2007-04-04 三菱化学株式会社 有機電界発光素子の製造方法
US6306559B1 (en) * 1999-01-26 2001-10-23 Mitsubishi Chemical Corporation Organic electroluminescent device comprising a patterned photosensitive composition and a method for producing same
JP2000353593A (ja) * 1999-06-08 2000-12-19 Fuji Electric Co Ltd 有機エレクトロルミネッセンスディスプレイパネルの製造装置および製造方法
JP3614335B2 (ja) * 1999-12-28 2005-01-26 三星エスディアイ株式会社 有機ｅｌ表示装置ならびにその製造方法
JP2001325745A (ja) * 2000-05-16 2001-11-22 Sony Corp 光学記録媒体と、その再生装置および記録再生装置
US6676990B1 (en) * 2000-07-27 2004-01-13 Eastman Kodak Company Method of depositing aluminum-lithium alloy cathode in organic light emitting devices

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EP1514918A4 (en) 2005-08-17
CA2489616C (en) 2010-04-20
EP1514918B1 (en) 2006-10-11
ATE342339T1 (de) 2006-11-15
JP4389784B2 (ja) 2009-12-24
CA2489616A1 (en) 2003-12-31
DE60309036T2 (de) 2007-02-22
EP1514918A1 (en) 2005-03-16
US20050155632A1 (en) 2005-07-21
AU2003244296A1 (en) 2004-01-06
JPWO2004000987A1 (ja) 2005-10-20
WO2004000987A1 (ja) 2003-12-31
CN1662637A (zh) 2005-08-31
US7037380B2 (en) 2006-05-02
DE60309036D1 (de) 2006-11-23
TW200406499A (en) 2004-05-01
CN1307297C (zh) 2007-03-28

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