TWI256735B - Transistor of semiconductor device and method of manufacturing the same - Google Patents
Transistor of semiconductor device and method of manufacturing the sameInfo
- Publication number
- TWI256735B TWI256735B TW093138589A TW93138589A TWI256735B TW I256735 B TWI256735 B TW I256735B TW 093138589 A TW093138589 A TW 093138589A TW 93138589 A TW93138589 A TW 93138589A TW I256735 B TWI256735 B TW I256735B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- oxide film
- semiconductor device
- transistor
- floating
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7887—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040056904A KR100642898B1 (ko) | 2004-07-21 | 2004-07-21 | 반도체 장치의 트랜지스터 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200605363A TW200605363A (en) | 2006-02-01 |
TWI256735B true TWI256735B (en) | 2006-06-11 |
Family
ID=35657758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093138589A TWI256735B (en) | 2004-07-21 | 2004-12-13 | Transistor of semiconductor device and method of manufacturing the same |
Country Status (6)
Country | Link |
---|---|
US (2) | US7189618B2 (zh) |
JP (1) | JP4583910B2 (zh) |
KR (1) | KR100642898B1 (zh) |
CN (1) | CN100452439C (zh) |
DE (1) | DE102004060690B4 (zh) |
TW (1) | TWI256735B (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US6355580B1 (en) | 1998-09-03 | 2002-03-12 | Micron Technology, Inc. | Ion-assisted oxidation methods and the resulting structures |
KR100526478B1 (ko) * | 2003-12-31 | 2005-11-08 | 동부아남반도체 주식회사 | 반도체 소자 및 그 제조방법 |
US7329914B2 (en) * | 2004-07-01 | 2008-02-12 | Macronix International Co., Ltd. | Charge trapping memory device with two separated non-conductive charge trapping inserts and method for making the same |
JP2006253311A (ja) * | 2005-03-09 | 2006-09-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2006269814A (ja) * | 2005-03-24 | 2006-10-05 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
US20070007578A1 (en) * | 2005-07-07 | 2007-01-11 | Li Chi N B | Sub zero spacer for shallow MDD junction to improve BVDSS in NVM bitcell |
KR100731115B1 (ko) * | 2005-11-04 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 플래시 메모리 소자 및 그 제조 방법 |
US7432156B1 (en) * | 2006-04-20 | 2008-10-07 | Spansion Llc | Memory device and methods for its fabrication |
KR100803663B1 (ko) * | 2006-06-29 | 2008-02-19 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
KR100788370B1 (ko) * | 2006-08-02 | 2008-01-02 | 동부일렉트로닉스 주식회사 | 플래시 메모리 소자의 스택 게이트 구조 및 그 형성 방법 |
KR100769151B1 (ko) * | 2006-09-13 | 2007-10-22 | 동부일렉트로닉스 주식회사 | 플래시 메모리 |
KR100757337B1 (ko) * | 2006-09-18 | 2007-09-11 | 삼성전자주식회사 | 전하 트랩형 비휘발성 메모리 장치 및 이를 제조하는 방법 |
KR100824157B1 (ko) * | 2006-10-31 | 2008-04-21 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 테스트 패턴 형성 방법 |
JP4852400B2 (ja) * | 2006-11-27 | 2012-01-11 | シャープ株式会社 | 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機 |
US7791172B2 (en) * | 2007-03-19 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
TW200843121A (en) * | 2007-04-24 | 2008-11-01 | Nanya Technology Corp | Two-bit flash memory cell and method for manufacturing the same |
US7749838B2 (en) * | 2007-07-06 | 2010-07-06 | Macronix International Co., Ltd. | Fabricating method of non-volatile memory cell |
US8093146B2 (en) * | 2010-03-17 | 2012-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating gate electrode using a hard mask with spacers |
US8318575B2 (en) | 2011-02-07 | 2012-11-27 | Infineon Technologies Ag | Compressive polycrystalline silicon film and method of manufacture thereof |
US8643123B2 (en) * | 2011-04-13 | 2014-02-04 | Freescale Semiconductor, Inc. | Method of making a semiconductor structure useful in making a split gate non-volatile memory cell |
JP5998521B2 (ja) | 2012-02-28 | 2016-09-28 | セイコーエプソン株式会社 | 不揮発性半導体メモリー及び不揮発性半導体メモリーの製造方法 |
TWI485812B (zh) * | 2013-02-21 | 2015-05-21 | Macronix Int Co Ltd | 記憶元件及其製造方法 |
US8952440B2 (en) * | 2013-02-22 | 2015-02-10 | Macronix International Co., Ltd. | Memory device and method of forming the same |
US8962416B1 (en) * | 2013-07-30 | 2015-02-24 | Freescale Semiconductor, Inc. | Split gate non-volatile memory cell |
US9812577B2 (en) | 2014-09-05 | 2017-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and fabricating method thereof |
US9728410B2 (en) * | 2014-10-07 | 2017-08-08 | Nxp Usa, Inc. | Split-gate non-volatile memory (NVM) cell and method therefor |
KR101601101B1 (ko) * | 2014-10-27 | 2016-03-08 | 서강대학교산학협력단 | 전하 트랩을 이용한 메모리 소자 및 그의 제조 방법 |
TWI697101B (zh) | 2018-11-08 | 2020-06-21 | 華邦電子股份有限公司 | 半導體結構及其形成方法 |
US20200227552A1 (en) * | 2019-01-11 | 2020-07-16 | Vanguard International Semiconductor Corporation | Semiconductor device with dielectric neck support and method for manufacturing the same |
TWI685085B (zh) * | 2019-02-26 | 2020-02-11 | 華邦電子股份有限公司 | 記憶元件及其製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3233998B2 (ja) * | 1992-08-28 | 2001-12-04 | 株式会社東芝 | 不揮発性半導体記憶装置の製造方法 |
JP2585180B2 (ja) * | 1992-09-02 | 1997-02-26 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
US5838041A (en) * | 1995-10-02 | 1998-11-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device having memory cell transistor provided with offset region acting as a charge carrier injecting region |
JPH11289021A (ja) * | 1998-04-02 | 1999-10-19 | Hitachi Ltd | 半導体集積回路装置およびその製造方法ならびにマイクロコンピュータ |
US6255165B1 (en) * | 1999-10-18 | 2001-07-03 | Advanced Micro Devices, Inc. | Nitride plug to reduce gate edge lifting |
US6238978B1 (en) * | 1999-11-05 | 2001-05-29 | Advanced Micro Devices, Inc | Use of etch to blunt gate corners |
US6271094B1 (en) * | 2000-02-14 | 2001-08-07 | International Business Machines Corporation | Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance |
US6352895B1 (en) * | 2000-03-15 | 2002-03-05 | International Business Machines Corporation | Method of forming merged self-aligned source and ONO capacitor for split gate non-volatile memory |
US6967372B2 (en) * | 2001-04-10 | 2005-11-22 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with vertical control gate sidewalls and insulation spacers |
CN101388396B (zh) * | 2001-11-21 | 2012-07-04 | 夏普株式会社 | 半导体存储器件及其制造和操作方法及便携式电子装置 |
US6639271B1 (en) * | 2001-12-20 | 2003-10-28 | Advanced Micro Devices, Inc. | Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
KR100466197B1 (ko) * | 2002-07-18 | 2005-01-13 | 주식회사 하이닉스반도체 | 플래시 메모리 셀 및 그 제조방법 |
US6777764B2 (en) * | 2002-09-10 | 2004-08-17 | Macronix International Co., Ltd. | ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process |
US6806517B2 (en) * | 2003-03-17 | 2004-10-19 | Samsung Electronics Co., Ltd. | Flash memory having local SONOS structure using notched gate and manufacturing method thereof |
-
2004
- 2004-07-21 KR KR1020040056904A patent/KR100642898B1/ko not_active IP Right Cessation
- 2004-12-09 US US11/007,918 patent/US7189618B2/en not_active Expired - Fee Related
- 2004-12-13 TW TW093138589A patent/TWI256735B/zh not_active IP Right Cessation
- 2004-12-15 DE DE102004060690A patent/DE102004060690B4/de not_active Expired - Fee Related
- 2004-12-22 JP JP2004370945A patent/JP4583910B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-21 CN CNB2005100055842A patent/CN100452439C/zh not_active Expired - Fee Related
-
2007
- 2007-01-22 US US11/656,582 patent/US7564090B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100452439C (zh) | 2009-01-14 |
CN1725514A (zh) | 2006-01-25 |
DE102004060690A1 (de) | 2006-03-16 |
US20070114595A1 (en) | 2007-05-24 |
KR20060008591A (ko) | 2006-01-27 |
KR100642898B1 (ko) | 2006-11-03 |
US7564090B2 (en) | 2009-07-21 |
US7189618B2 (en) | 2007-03-13 |
DE102004060690B4 (de) | 2011-07-21 |
TW200605363A (en) | 2006-02-01 |
JP4583910B2 (ja) | 2010-11-17 |
JP2006032895A (ja) | 2006-02-02 |
US20060019436A1 (en) | 2006-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |