TWI256735B - Transistor of semiconductor device and method of manufacturing the same - Google Patents

Transistor of semiconductor device and method of manufacturing the same

Info

Publication number
TWI256735B
TWI256735B TW093138589A TW93138589A TWI256735B TW I256735 B TWI256735 B TW I256735B TW 093138589 A TW093138589 A TW 093138589A TW 93138589 A TW93138589 A TW 93138589A TW I256735 B TWI256735 B TW I256735B
Authority
TW
Taiwan
Prior art keywords
gate
oxide film
semiconductor device
transistor
floating
Prior art date
Application number
TW093138589A
Other languages
English (en)
Other versions
TW200605363A (en
Inventor
Sang-Don Lee
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200605363A publication Critical patent/TW200605363A/zh
Application granted granted Critical
Publication of TWI256735B publication Critical patent/TWI256735B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7887—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW093138589A 2004-07-21 2004-12-13 Transistor of semiconductor device and method of manufacturing the same TWI256735B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040056904A KR100642898B1 (ko) 2004-07-21 2004-07-21 반도체 장치의 트랜지스터 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200605363A TW200605363A (en) 2006-02-01
TWI256735B true TWI256735B (en) 2006-06-11

Family

ID=35657758

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093138589A TWI256735B (en) 2004-07-21 2004-12-13 Transistor of semiconductor device and method of manufacturing the same

Country Status (6)

Country Link
US (2) US7189618B2 (zh)
JP (1) JP4583910B2 (zh)
KR (1) KR100642898B1 (zh)
CN (1) CN100452439C (zh)
DE (1) DE102004060690B4 (zh)
TW (1) TWI256735B (zh)

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US6355580B1 (en) 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
KR100526478B1 (ko) * 2003-12-31 2005-11-08 동부아남반도체 주식회사 반도체 소자 및 그 제조방법
US7329914B2 (en) * 2004-07-01 2008-02-12 Macronix International Co., Ltd. Charge trapping memory device with two separated non-conductive charge trapping inserts and method for making the same
JP2006253311A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体装置及びその製造方法
JP2006269814A (ja) * 2005-03-24 2006-10-05 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US20070007578A1 (en) * 2005-07-07 2007-01-11 Li Chi N B Sub zero spacer for shallow MDD junction to improve BVDSS in NVM bitcell
KR100731115B1 (ko) * 2005-11-04 2007-06-22 동부일렉트로닉스 주식회사 플래시 메모리 소자 및 그 제조 방법
US7432156B1 (en) * 2006-04-20 2008-10-07 Spansion Llc Memory device and methods for its fabrication
KR100803663B1 (ko) * 2006-06-29 2008-02-19 삼성전자주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR100788370B1 (ko) * 2006-08-02 2008-01-02 동부일렉트로닉스 주식회사 플래시 메모리 소자의 스택 게이트 구조 및 그 형성 방법
KR100769151B1 (ko) * 2006-09-13 2007-10-22 동부일렉트로닉스 주식회사 플래시 메모리
KR100757337B1 (ko) * 2006-09-18 2007-09-11 삼성전자주식회사 전하 트랩형 비휘발성 메모리 장치 및 이를 제조하는 방법
KR100824157B1 (ko) * 2006-10-31 2008-04-21 주식회사 하이닉스반도체 플래시 메모리 소자의 테스트 패턴 형성 방법
JP4852400B2 (ja) * 2006-11-27 2012-01-11 シャープ株式会社 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機
US7791172B2 (en) * 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
TW200843121A (en) * 2007-04-24 2008-11-01 Nanya Technology Corp Two-bit flash memory cell and method for manufacturing the same
US7749838B2 (en) * 2007-07-06 2010-07-06 Macronix International Co., Ltd. Fabricating method of non-volatile memory cell
US8093146B2 (en) * 2010-03-17 2012-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating gate electrode using a hard mask with spacers
US8318575B2 (en) 2011-02-07 2012-11-27 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof
US8643123B2 (en) * 2011-04-13 2014-02-04 Freescale Semiconductor, Inc. Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
JP5998521B2 (ja) 2012-02-28 2016-09-28 セイコーエプソン株式会社 不揮発性半導体メモリー及び不揮発性半導体メモリーの製造方法
TWI485812B (zh) * 2013-02-21 2015-05-21 Macronix Int Co Ltd 記憶元件及其製造方法
US8952440B2 (en) * 2013-02-22 2015-02-10 Macronix International Co., Ltd. Memory device and method of forming the same
US8962416B1 (en) * 2013-07-30 2015-02-24 Freescale Semiconductor, Inc. Split gate non-volatile memory cell
US9812577B2 (en) 2014-09-05 2017-11-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and fabricating method thereof
US9728410B2 (en) * 2014-10-07 2017-08-08 Nxp Usa, Inc. Split-gate non-volatile memory (NVM) cell and method therefor
KR101601101B1 (ko) * 2014-10-27 2016-03-08 서강대학교산학협력단 전하 트랩을 이용한 메모리 소자 및 그의 제조 방법
TWI697101B (zh) 2018-11-08 2020-06-21 華邦電子股份有限公司 半導體結構及其形成方法
US20200227552A1 (en) * 2019-01-11 2020-07-16 Vanguard International Semiconductor Corporation Semiconductor device with dielectric neck support and method for manufacturing the same
TWI685085B (zh) * 2019-02-26 2020-02-11 華邦電子股份有限公司 記憶元件及其製造方法

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CN101388396B (zh) * 2001-11-21 2012-07-04 夏普株式会社 半导体存储器件及其制造和操作方法及便携式电子装置
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US6777764B2 (en) * 2002-09-10 2004-08-17 Macronix International Co., Ltd. ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process
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Also Published As

Publication number Publication date
CN100452439C (zh) 2009-01-14
CN1725514A (zh) 2006-01-25
DE102004060690A1 (de) 2006-03-16
US20070114595A1 (en) 2007-05-24
KR20060008591A (ko) 2006-01-27
KR100642898B1 (ko) 2006-11-03
US7564090B2 (en) 2009-07-21
US7189618B2 (en) 2007-03-13
DE102004060690B4 (de) 2011-07-21
TW200605363A (en) 2006-02-01
JP4583910B2 (ja) 2010-11-17
JP2006032895A (ja) 2006-02-02
US20060019436A1 (en) 2006-01-26

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