TWI246773B - Insulation gate type semiconductor device - Google Patents
Insulation gate type semiconductor device Download PDFInfo
- Publication number
- TWI246773B TWI246773B TW092108822A TW92108822A TWI246773B TW I246773 B TWI246773 B TW I246773B TW 092108822 A TW092108822 A TW 092108822A TW 92108822 A TW92108822 A TW 92108822A TW I246773 B TWI246773 B TW I246773B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductivity type
- semiconductor layer
- layer
- semiconductor
- type
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title claims abstract 4
- 239000004065 semiconductor Substances 0.000 title claims description 571
- 239000012535 impurity Substances 0.000 claims abstract description 102
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 341
- 239000011229 interlayer Substances 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 230000000694 effects Effects 0.000 description 27
- 238000010586 diagram Methods 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 14
- 229910052805 deuterium Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000003204 osmotic effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 208000002599 Smear Layer Diseases 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- KCFIHQSTJSCCBR-UHFFFAOYSA-N [C].[Ge] Chemical compound [C].[Ge] KCFIHQSTJSCCBR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002127334 | 2002-04-26 | ||
| JP2002298838A JP3935042B2 (ja) | 2002-04-26 | 2002-10-11 | 絶縁ゲート型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200308096A TW200308096A (en) | 2003-12-16 |
| TWI246773B true TWI246773B (en) | 2006-01-01 |
Family
ID=29272379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092108822A TWI246773B (en) | 2002-04-26 | 2003-04-16 | Insulation gate type semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3935042B2 (ja) |
| KR (1) | KR100564895B1 (ja) |
| CN (1) | CN1231978C (ja) |
| TW (1) | TWI246773B (ja) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4832731B2 (ja) * | 2004-07-07 | 2011-12-07 | 株式会社東芝 | 電力用半導体装置 |
| US7265415B2 (en) * | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| JP4627272B2 (ja) * | 2006-03-09 | 2011-02-09 | 三菱電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| DE102007063687B4 (de) * | 2006-03-22 | 2013-03-14 | Denso Corporation | Schaltkreis mit einem Transistor |
| JP5061538B2 (ja) * | 2006-09-01 | 2012-10-31 | 株式会社デンソー | 半導体装置 |
| US7476591B2 (en) * | 2006-10-13 | 2009-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lateral power MOSFET with high breakdown voltage and low on-resistance |
| KR100832718B1 (ko) * | 2006-12-27 | 2008-05-28 | 동부일렉트로닉스 주식회사 | 트랜치 게이트 모스 소자 및 그 제조 방법 |
| JP5040387B2 (ja) | 2007-03-20 | 2012-10-03 | 株式会社デンソー | 半導体装置 |
| JP5119806B2 (ja) * | 2007-08-27 | 2013-01-16 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
| DE112009000535B4 (de) | 2008-03-07 | 2013-08-01 | Mitsubishi Electric Corp. | Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung |
| US7982253B2 (en) | 2008-08-01 | 2011-07-19 | Infineon Technologies Austria Ag | Semiconductor device with a dynamic gate-drain capacitance |
| US8039897B2 (en) * | 2008-12-19 | 2011-10-18 | Fairchild Semiconductor Corporation | Lateral MOSFET with substrate drain connection |
| JP5462020B2 (ja) * | 2009-06-09 | 2014-04-02 | 株式会社東芝 | 電力用半導体素子 |
| US9312330B2 (en) * | 2009-07-15 | 2016-04-12 | Fuji Electric Co., Ltd. | Super-junction semiconductor device |
| JP5665567B2 (ja) | 2011-01-26 | 2015-02-04 | 株式会社東芝 | 半導体素子 |
| JP2015128184A (ja) * | 2011-03-10 | 2015-07-09 | 株式会社東芝 | 半導体装置 |
| JP5680460B2 (ja) | 2011-03-23 | 2015-03-04 | 株式会社東芝 | 電力用半導体装置 |
| CN102856193B (zh) * | 2011-06-27 | 2015-05-13 | 中国科学院微电子研究所 | Igbt器件及其制作方法 |
| CN102856192B (zh) * | 2011-06-27 | 2015-05-13 | 中国科学院微电子研究所 | Igbt器件及其制作方法 |
| JP6278549B2 (ja) | 2012-03-30 | 2018-02-14 | 富士電機株式会社 | 半導体装置 |
| US9240476B2 (en) * | 2013-03-13 | 2016-01-19 | Cree, Inc. | Field effect transistor devices with buried well regions and epitaxial layers |
| US9142668B2 (en) | 2013-03-13 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with buried well protection regions |
| US9214572B2 (en) * | 2013-09-20 | 2015-12-15 | Monolith Semiconductor Inc. | High voltage MOSFET devices and methods of making the devices |
| US9991376B2 (en) | 2013-09-20 | 2018-06-05 | Monolith Semiconductor Inc. | High voltage MOSFET devices and methods of making the devices |
| CN106533163A (zh) * | 2016-01-22 | 2017-03-22 | 东莞市清能光伏科技有限公司 | 光伏功率转换器 |
| JP6977273B2 (ja) * | 2016-06-16 | 2021-12-08 | 富士電機株式会社 | 半導体装置および製造方法 |
| JP6753951B2 (ja) | 2017-06-06 | 2020-09-09 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
| US10424660B2 (en) * | 2017-12-21 | 2019-09-24 | Cree, Inc. | Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices |
| JP7029364B2 (ja) | 2018-08-20 | 2022-03-03 | 株式会社東芝 | 半導体装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5550661A (en) * | 1978-10-07 | 1980-04-12 | Mitsubishi Electric Corp | Insulated gate type field effect semiconductor device |
| JPS60258967A (ja) * | 1984-06-05 | 1985-12-20 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS6442177A (en) * | 1987-08-10 | 1989-02-14 | Hitachi Ltd | Insulated gate transistor |
| JPH01293669A (ja) * | 1988-05-23 | 1989-11-27 | Nec Corp | 縦型ｍｏｓ電界効果トランジスタ |
| JPH06283718A (ja) * | 1993-03-30 | 1994-10-07 | Nec Kansai Ltd | Ｍｏｓ型半導体装置 |
| JPH09213939A (ja) * | 1996-01-30 | 1997-08-15 | Nec Corp | 半導体装置 |
| EP0958601A1 (en) * | 1996-06-19 | 1999-11-24 | Abb Research Ltd. | A method for producing a channel region layer in a voltage controlled semiconductor device |
| JP3460585B2 (ja) * | 1998-07-07 | 2003-10-27 | 富士電機株式会社 | 炭化けい素ｍｏｓ半導体素子の製造方法 |
| JP4830184B2 (ja) * | 1999-08-04 | 2011-12-07 | 富士電機株式会社 | 半導体装置の製造方法 |
| KR20010040186A (ko) * | 1999-10-27 | 2001-05-15 | 인터실 코포레이션 | 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술 |
| JP3740008B2 (ja) * | 2000-10-11 | 2006-01-25 | 株式会社日立製作所 | 車載イグナイタ、絶縁ゲート半導体装置及びエンジンシステム |
-
2002
- 2002-10-11 JP JP2002298838A patent/JP3935042B2/ja not_active Expired - Fee Related
-
2003
- 2003-04-16 TW TW092108822A patent/TWI246773B/zh not_active IP Right Cessation
- 2003-04-25 KR KR1020030026418A patent/KR100564895B1/ko active IP Right Grant
- 2003-04-28 CN CNB031306160A patent/CN1231978C/zh not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW200308096A (en) | 2003-12-16 |
| KR100564895B1 (ko) | 2006-03-30 |
| CN1453881A (zh) | 2003-11-05 |
| CN1231978C (zh) | 2005-12-14 |
| KR20030084780A (ko) | 2003-11-01 |
| JP3935042B2 (ja) | 2007-06-20 |
| JP2004006598A (ja) | 2004-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |