JP5680460B2 - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 138
- 239000010410 layer Substances 0.000 claims description 502
- 239000012535 impurity Substances 0.000 claims description 46
- 239000011229 interlayer Substances 0.000 claims description 11
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 230000015556 catabolic process Effects 0.000 description 19
- 238000005530 etching Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
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Description
第1の実施の形態について、図1〜図4を用いて説明する。図1は、第1の実施形態に係る電力用半導体装置100の主要部の要部斜視図である。図2は、第1の実施形態に係る電力用半導体装置の、(a)図1の斜視図のA−Aを通る水平面における要部平面図、及び(b)図1の斜視図のB−Bを通る水平面における要部平面図である。図3は、第1の実施形態に係る電力用半導体装置の図1の斜視図を上から見た要部上面図であり、ソース電極14及び層間絶縁膜12を省略した図である。破線は、ゲート電極11の下部に隠れた層を示す。また、破線Cで切り出した領域が、図1の斜視図に示した領域に対応する。図4は、第1の実施形態に係る電力用半導体装置の動作を説明する要部斜視図である。図1〜4は、いずれもMOSFET100の電流が流れる素子領域の主要部を説明するもので、素子領域の外側の領域である終端領域に関しては、本発明の本質に関わらないため説明は省略する。
第2の実施形態について、図7〜図9を用いて説明する。図7は、第2の実施形態に係る電力用半導体装置200の主要部の要部斜視図である。図8は、第2の実施形態に係る電力用半導体装置の、(a)図7の斜視図のD−Dを通る水平面における要部平面図、及び(b)図7の斜視図のE−Eを通る水平面における要部平面図である。図9は、第2の実施形態に係る電力用半導体装置の図7の斜視図を上から見た要部上面図であり、ソース電極14及び層間絶縁膜12を省略した図である。図9における破線は、ゲート電極11の下部に隠れた層を示す。図7〜9は、いずれもMOSFET200の電流が流れる素子領域の主要部を説明するもので、素子領域の外側の領域である終端領域に関しては、本発明の本質に関わらないため説明は省略する。なお、本実施形態で説明した構成と同じ構成の部分には同じ参照番号または記号を用いその説明は省略する。本実施形態との相異点について主に説明する。
第3の実施の形態について、図10〜図11を用いて説明する。図10は、第3の実施形態に係る電力用半導体装置の、(a)図1の斜視図のA−Aに対応する位置の水平面における要部平面図、及び(b)図1の斜視図のB−Bに対応する位置の水平面における要部平面図である。図11は、第3の実施形態に係る電力用半導体装置の図1の斜視図を上から見た要部上面図に対応する上面図であり、ソース電極14及び層間絶縁膜12を省略した図である。図11における破線は、ゲート電極11の下部に隠れた層を示す。図10〜11は、いずれもMOSFET300の電流が流れる素子領域の主要部を説明するもので、素子領域の外側の領域である終端領域に関しては、本発明の本質に関わらないため説明は省略する。なお、本実施形態で説明した構成と同じ構成の部分には同じ参照番号または記号を用いその説明は省略する。また、本実施形態に係る電力用半導体装置の要部斜視図に関しては、第2の実施形態の斜視図とほぼ同様なので省略した。本実施形態との相異点について主に説明する。
2 n−形バッファ層
3 n形ピラー層
4 p形ピラー層
5 p形ベース層
6 n+形ソース層
7 p+形コンタクト層
8 p形ベース接合層
9 n形J−FET層
10 ゲート絶縁膜
11 ゲート電極
12 層間絶縁膜
13 ドレイン電極
14 ソース電極
15 コンタクト不良部
100、200、300 MOSFET
Claims (11)
- 第1の主面と前記第1の主面とは反対側の第2の主面とを有する第1導電形の第1の半導体層と、
前記第1の主面側から前記第2の主面側に向かって前記第1の半導体層中を延伸し、互いに離間しつつ、それぞれが島状に設けられた複数の第2導電形の第2の半導体層と、
前記第2の半導体層の前記第1の主面側に設けられ、前記第2の半導体層の第2導電形不純物濃度より高い第2導電形不純物濃度を有する、第2導電形の第3の半導体層と、
前記第3の半導体層の表面に選択的に設けられ、前記第1の半導体層の前記第1導電形不純物濃度より高い不純物濃度を有する、複数の第1導電形の第4の半導体層と、
隣り合う2つの前記第3の半導体層を互いに電気的に接続し、かつ、隣り合う2つの第2の半導体層の上部の側部同士を互いに電気的に接続し、前記第3の半導体層の前記第2導電形不純物濃度より低い不純物濃度を有する第2導電形の第5の半導体層と、
前記第1の半導体層、前記複数の第5の半導体層、前記複数の第3の半導体層、及び前記複数の第4の半導体層の上にゲート絶縁膜を介して設けられ、前記複数の第3の半導体層及び前記複数の第4の半導体層の上に複数の開口部を有するゲート電極と、
前記ゲート電極の上に設けられた層間絶縁膜と、
前記第1の半導体層の前記第2の主面に電気的に接続された第1の電極と、
前記開口部を介して前記複数の第3の半導体層及び前記複数の第4の半導体層に電気的に接続された第2の電極と、
を備えたことを特徴とする電力用半導体装置。 - 前記複数の第2の半導体層及び前記複数の第3の半導体層は、前記第1の主面に平行な第1の方向に沿って延伸し前記第1の方向と直交し且つ前記第1の主面に平行な第2の方向に配列された複数の列のそれぞれの列に沿って配置され、
前記複数の列に形成された前記複数の第3の半導体層は、前記第1の方向に沿って前記複数の第5の半導体層により互いに電気的に接続されていることを特徴とする請求項1記載の電力用半導体装置。 - 前記複数の第5の半導体層の底部は、前記複数の第3の半導体層の底部よりも前記第1の半導体層側に延伸しており、
前記複数の第5の半導体層は、前記第1の方向において隣り合う2つの第3の半導体層の下にそれぞれ接続された2つの第2の半導体層をさらに電気的に接続することを特徴とする請求項2に記載の電力用半導体装置。 - 前記第1の半導体層の表面に設けられ、前記複数の第3の半導体層のうち前記第2の方向において隣り合う第3の半導体層のそれぞれに接合された第1の部分を有する第1導電形の第6の半導体層をさらに備え、
前記第6の半導体層は、前記第1の半導体層の第1導電形不純物濃度よりも高い第1導電形不純物濃度を有することを特徴とする請求項2又は3に記載の電力用半導体装置。 - 前記第6の半導体層の前記第1の部分は、前記第1の方向に沿って延伸していることを特徴とする請求項4記載の電力用半導体装置。
- 前記第6の半導体層は、前記第2の方向に延伸し、前記第5の半導体層の表面に形成され前記第1の方向において隣り合う第3の半導体層の間を接合する第2の部分をさらに有し、
前記第6の半導体層の前記第1の部分及び前記第2の部分により、前記複数の第3の半導体層の1つが前記第1の主面と平行な平面内で取り囲まれていることを特徴とする請求項5記載の電力用半導体装置。 - 前記第4の半導体層は、前記ゲート電極の前記複数の開口部の縁に沿って環状に形成されていることを特徴とする請求項6記載の電力用半導体装置。
- 前記複数の列の各列に沿って配列された前記複数の第3の半導体層は、前記第1の方向及び前記第2の方向に等間隔に離間して配置され、格子状に配列されていることを特徴とする請求項2〜7のいずれか1つに記載の電力用半導体装置。
- 前記複数の第3の半導体層は、前記第1の方向に等間隔に離間して配置されており、
前記複数の列のうちの一列に配置された第3の半導体層のうち隣り合う2つの第3の半導体層の第1の方向における中心の位置は、前記一列と隣り合う他の列に配置された第3の半導体層のうちの1つと第2の方向において隣り合うことを特徴とする請求項2〜7のいずれか1つに記載の電力用半導体装置。 - 前記複数の第3の半導体層を前記第1の主面の垂直方向からみた平面形状は、六角形で形成されており、
前記平面形状の一辺は、第2の方向に平行であることを特徴とする請求項9記載の電力用半導体装置。 - 前記複数の列のうちの1つの列に配置された前記複数の第5の半導体層のうちの1つの第5の半導体層と、前記1つの列の隣の列に配置された別の第5の半導体層と、を前記第2の方向において電気的に接続する第2導電形の半導体層からなる連結部が、前記第1の半導体層中にさらに設けられていることを特徴とする請求項2〜10のいずれか1つに記載の電力用半導体装置。
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JP2011064669A JP5680460B2 (ja) | 2011-03-23 | 2011-03-23 | 電力用半導体装置 |
CN201210051614.3A CN102694028B (zh) | 2011-03-23 | 2012-03-02 | 电力用半导体装置 |
US13/424,344 US8680606B2 (en) | 2011-03-23 | 2012-03-19 | Power semiconductor device |
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JP2011064669A JP5680460B2 (ja) | 2011-03-23 | 2011-03-23 | 電力用半導体装置 |
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JP5680460B2 true JP5680460B2 (ja) | 2015-03-04 |
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KR101803156B1 (ko) * | 2015-11-09 | 2017-12-29 | 광전자 주식회사 | 온저항 특성이 우수한 p 필러형 슈퍼정션 파워 모스펫 및 그 제조 방법 |
JP6377302B1 (ja) * | 2017-10-05 | 2018-08-22 | 三菱電機株式会社 | 半導体装置 |
CN109326636B (zh) * | 2018-10-16 | 2024-06-21 | 南京华瑞微集成电路有限公司 | 一种元胞结构及功率器件 |
CN111799323B (zh) * | 2020-07-21 | 2024-06-25 | 苏州华太电子技术股份有限公司 | 超级结绝缘栅双极型晶体管结构及其制作方法 |
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US6475864B1 (en) * | 1999-10-21 | 2002-11-05 | Fuji Electric Co., Ltd. | Method of manufacturing a super-junction semiconductor device with an conductivity type layer |
JP3935042B2 (ja) * | 2002-04-26 | 2007-06-20 | 株式会社東芝 | 絶縁ゲート型半導体装置 |
JP2006019608A (ja) * | 2004-07-05 | 2006-01-19 | Matsushita Electric Ind Co Ltd | Misfetデバイス |
JP4996848B2 (ja) * | 2005-11-30 | 2012-08-08 | 株式会社東芝 | 半導体装置 |
JP2007266267A (ja) * | 2006-03-28 | 2007-10-11 | Toshiba Corp | 半導体装置 |
JP5132123B2 (ja) | 2006-11-01 | 2013-01-30 | 株式会社東芝 | 電力用半導体素子 |
JP5036479B2 (ja) * | 2007-10-10 | 2012-09-26 | 三菱電機株式会社 | 縦型mosfet構造の半導体装置 |
JP4844605B2 (ja) * | 2008-09-10 | 2011-12-28 | ソニー株式会社 | 半導体装置 |
JP2010103337A (ja) * | 2008-10-24 | 2010-05-06 | Toshiba Corp | 電力用半導体装置 |
JP5462020B2 (ja) * | 2009-06-09 | 2014-04-02 | 株式会社東芝 | 電力用半導体素子 |
JP2011249712A (ja) | 2010-05-31 | 2011-12-08 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2013062343A (ja) * | 2011-09-13 | 2013-04-04 | Toshiba Corp | 半導体素子 |
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- 2012-03-02 CN CN201210051614.3A patent/CN102694028B/zh not_active Expired - Fee Related
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CN102694028B (zh) | 2015-09-16 |
US8680606B2 (en) | 2014-03-25 |
US20120241823A1 (en) | 2012-09-27 |
JP2012204379A (ja) | 2012-10-22 |
CN102694028A (zh) | 2012-09-26 |
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