TWI244748B - A light-emitting device with a protecting structure - Google Patents

A light-emitting device with a protecting structure Download PDF

Info

Publication number
TWI244748B
TWI244748B TW093130813A TW93130813A TWI244748B TW I244748 B TWI244748 B TW I244748B TW 093130813 A TW093130813 A TW 093130813A TW 93130813 A TW93130813 A TW 93130813A TW I244748 B TWI244748 B TW I244748B
Authority
TW
Taiwan
Prior art keywords
light
scope
circuit protection
patent application
protection device
Prior art date
Application number
TW093130813A
Other languages
English (en)
Chinese (zh)
Other versions
TW200612541A (en
Inventor
Meng-Yuan Hong
Jen-Shui Wang
Tzu-Feng Tseng
Ching-San Tao
Wen-Huang Liu
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW093130813A priority Critical patent/TWI244748B/zh
Priority to KR1020050081565A priority patent/KR101056457B1/ko
Priority to US11/222,922 priority patent/US7683383B2/en
Priority to DE102005043649A priority patent/DE102005043649A1/de
Priority to JP2005291277A priority patent/JP5336030B2/ja
Application granted granted Critical
Publication of TWI244748B publication Critical patent/TWI244748B/zh
Publication of TW200612541A publication Critical patent/TW200612541A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
TW093130813A 2004-10-08 2004-10-08 A light-emitting device with a protecting structure TWI244748B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW093130813A TWI244748B (en) 2004-10-08 2004-10-08 A light-emitting device with a protecting structure
KR1020050081565A KR101056457B1 (ko) 2004-10-08 2005-09-02 회로 보호 유닛을 갖는 발광 소자
US11/222,922 US7683383B2 (en) 2004-10-08 2005-09-08 Light emitting device having circuit protection unit
DE102005043649A DE102005043649A1 (de) 2004-10-08 2005-09-13 Lichtemissionsbauteil mit Stromkreis-Schutzschaltung
JP2005291277A JP5336030B2 (ja) 2004-10-08 2005-10-04 回路保護ユニットを備える発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093130813A TWI244748B (en) 2004-10-08 2004-10-08 A light-emitting device with a protecting structure

Publications (2)

Publication Number Publication Date
TWI244748B true TWI244748B (en) 2005-12-01
TW200612541A TW200612541A (en) 2006-04-16

Family

ID=36120746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093130813A TWI244748B (en) 2004-10-08 2004-10-08 A light-emitting device with a protecting structure

Country Status (5)

Country Link
US (1) US7683383B2 (enExample)
JP (1) JP5336030B2 (enExample)
KR (1) KR101056457B1 (enExample)
DE (1) DE102005043649A1 (enExample)
TW (1) TWI244748B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100833313B1 (ko) * 2006-01-02 2008-05-28 삼성전기주식회사 질화갈륨계 발광다이오드 소자 및 그의 제조방법
JP4694395B2 (ja) * 2006-03-22 2011-06-08 日本オプネクスト株式会社 窒化物半導体発光素子及びその製造方法
US7994514B2 (en) * 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
GB2439358B (en) * 2006-06-19 2010-12-15 Cambridge Display Tech Ltd Organic electroluminescent optocouplers
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
DE102007057672A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
KR101438811B1 (ko) * 2008-01-03 2014-09-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101457204B1 (ko) * 2008-02-01 2014-11-03 서울바이오시스 주식회사 발광 다이오드 및 그 제조방법
US7923744B2 (en) * 2008-02-22 2011-04-12 Huga Optotech Inc. Semiconductor light-emitting device
TWI371873B (en) * 2008-02-22 2012-09-01 Huga Optotech Inc Semiconductor light-emitting device
US8884321B2 (en) * 2008-04-06 2014-11-11 Lg Innotek Co., Ltd. Luminous element
DE102008034560B4 (de) * 2008-07-24 2022-10-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
CN101656260B (zh) * 2009-09-08 2011-09-21 厦门市三安光电科技有限公司 一种抗静电氮化镓基发光器件及其制作方法
KR101039896B1 (ko) * 2009-12-03 2011-06-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100999692B1 (ko) * 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101028206B1 (ko) * 2010-04-08 2011-04-11 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
JP5281612B2 (ja) * 2010-05-26 2013-09-04 株式会社東芝 半導体発光装置及びその製造方法
US9548286B2 (en) * 2010-08-09 2017-01-17 Micron Technology, Inc. Solid state lights with thermal control elements
KR101785644B1 (ko) * 2011-01-26 2017-10-16 엘지이노텍 주식회사 발광소자 및 그 발광 소자의 제조 방법
US9246061B2 (en) 2011-03-14 2016-01-26 Koninklijke Philips N.V. LED having vertical contacts redistruted for flip chip mounting
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) * 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
KR102085897B1 (ko) * 2013-06-10 2020-03-06 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR102255196B1 (ko) 2014-02-03 2021-05-25 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조 방법
KR101553372B1 (ko) * 2014-03-28 2015-09-15 전북대학교산학협력단 자발 보호 기능을 겸비한 발광 소자
KR102224245B1 (ko) * 2015-01-26 2021-03-08 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템
CN107681034B (zh) * 2017-08-30 2019-11-12 天津三安光电有限公司 微型发光二极管及其制作方法
US12507508B2 (en) * 2017-08-30 2025-12-23 Xiamen San'an Optoelectronics Co., Ltd. Micro light-emitting diode and micro light-emitting diode array
CN108172668B (zh) * 2018-01-16 2020-02-11 福建兆元光电有限公司 一种发光二极管
KR20200075430A (ko) 2018-12-18 2020-06-26 김은혜 미용실용 고객관리 카드
TWI827271B (zh) * 2022-09-23 2023-12-21 國立清華大學 光電元件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112525A (ja) * 1992-09-25 1994-04-22 Nisshin Steel Co Ltd 発光デバイス用ヘテロ接合素子
JPH06267301A (ja) * 1993-03-15 1994-09-22 Olympus Optical Co Ltd 有機ホトルミネッセンス素子
JPH1065215A (ja) * 1996-08-22 1998-03-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP3787202B2 (ja) * 1997-01-10 2006-06-21 ローム株式会社 半導体発光素子
JP3257455B2 (ja) * 1997-07-17 2002-02-18 松下電器産業株式会社 発光装置
JP3914615B2 (ja) * 1997-08-19 2007-05-16 住友電気工業株式会社 半導体発光素子及びその製造方法
JPH11298041A (ja) * 1998-04-15 1999-10-29 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及び光源装置
JP2950811B1 (ja) * 1998-05-22 1999-09-20 株式会社エイ・ティ・アール環境適応通信研究所 超格子半導体発光素子
JP3686569B2 (ja) * 2000-03-02 2005-08-24 シャープ株式会社 半導体発光装置及びそれを用いた表示装置
US6693352B1 (en) 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
JP2002368103A (ja) * 2001-06-05 2002-12-20 Hitachi Ltd 半導体装置とその製造方法
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003289176A (ja) * 2002-01-24 2003-10-10 Sony Corp 半導体発光素子およびその製造方法
TW577184B (en) * 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
TW579610B (en) * 2003-01-30 2004-03-11 Epistar Corp Nitride light-emitting device having adhered reflective layer
TWI229463B (en) * 2004-02-02 2005-03-11 South Epitaxy Corp Light-emitting diode structure with electro-static discharge protection
US20050218414A1 (en) * 2004-03-30 2005-10-06 Tetsuzo Ueda 4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate

Also Published As

Publication number Publication date
JP2006108682A (ja) 2006-04-20
TW200612541A (en) 2006-04-16
KR20060050956A (ko) 2006-05-19
US7683383B2 (en) 2010-03-23
KR101056457B1 (ko) 2011-08-11
US20060081857A1 (en) 2006-04-20
DE102005043649A1 (de) 2006-04-20
JP5336030B2 (ja) 2013-11-06

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