DE102005043649A1 - Lichtemissionsbauteil mit Stromkreis-Schutzschaltung - Google Patents

Lichtemissionsbauteil mit Stromkreis-Schutzschaltung Download PDF

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Publication number
DE102005043649A1
DE102005043649A1 DE102005043649A DE102005043649A DE102005043649A1 DE 102005043649 A1 DE102005043649 A1 DE 102005043649A1 DE 102005043649 A DE102005043649 A DE 102005043649A DE 102005043649 A DE102005043649 A DE 102005043649A DE 102005043649 A1 DE102005043649 A1 DE 102005043649A1
Authority
DE
Germany
Prior art keywords
layer
component according
potential barrier
barrier layer
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE102005043649A
Other languages
German (de)
English (en)
Inventor
Steve Meng-Yuan Hong
Tzu-Feng Tseng
Jen-Shui Wang
Ching-San Tao
Wen-Huang Liu
Min-Hsun Hsieh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of DE102005043649A1 publication Critical patent/DE102005043649A1/de
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
DE102005043649A 2004-10-08 2005-09-13 Lichtemissionsbauteil mit Stromkreis-Schutzschaltung Ceased DE102005043649A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TWP093130813 2004-10-08
TW093130813A TWI244748B (en) 2004-10-08 2004-10-08 A light-emitting device with a protecting structure

Publications (1)

Publication Number Publication Date
DE102005043649A1 true DE102005043649A1 (de) 2006-04-20

Family

ID=36120746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005043649A Ceased DE102005043649A1 (de) 2004-10-08 2005-09-13 Lichtemissionsbauteil mit Stromkreis-Schutzschaltung

Country Status (5)

Country Link
US (1) US7683383B2 (enExample)
JP (1) JP5336030B2 (enExample)
KR (1) KR101056457B1 (enExample)
DE (1) DE102005043649A1 (enExample)
TW (1) TWI244748B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007122550A3 (en) * 2006-04-21 2008-03-06 Koninkl Philips Electronics Nv Semiconductor light emitting device with integrated electronic components
WO2010009690A1 (de) * 2008-07-24 2010-01-28 Osram Opto Semiconductors Gmbh Strahlungemittierender halbleiterchip mit schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren
EP2330638A1 (en) * 2009-12-03 2011-06-08 LG Innotek Co., Ltd. Light emitting device
EP2482318A1 (en) * 2011-01-26 2012-08-01 LG Innotek Co., Ltd. Light emitting device and fabricating method thereof
WO2012123840A1 (en) * 2011-03-14 2012-09-20 Koninklijke Philips Electronics N.V. Led having vertical contacts redistributed for flip chip mounting
EP2225783A4 (en) * 2008-01-03 2013-10-02 Lg Innotek Co Ltd LIGHT-EMITTING SEMICONDUCTOR ELEMENT
EP2390936B1 (en) * 2010-05-26 2014-03-19 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same

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KR100833313B1 (ko) * 2006-01-02 2008-05-28 삼성전기주식회사 질화갈륨계 발광다이오드 소자 및 그의 제조방법
JP4694395B2 (ja) * 2006-03-22 2011-06-08 日本オプネクスト株式会社 窒化物半導体発光素子及びその製造方法
GB2439358B (en) * 2006-06-19 2010-12-15 Cambridge Display Tech Ltd Organic electroluminescent optocouplers
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
DE102007057672A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
KR101457204B1 (ko) * 2008-02-01 2014-11-03 서울바이오시스 주식회사 발광 다이오드 및 그 제조방법
US7923744B2 (en) * 2008-02-22 2011-04-12 Huga Optotech Inc. Semiconductor light-emitting device
TWI371873B (en) * 2008-02-22 2012-09-01 Huga Optotech Inc Semiconductor light-emitting device
US8884321B2 (en) * 2008-04-06 2014-11-11 Lg Innotek Co., Ltd. Luminous element
CN101656260B (zh) * 2009-09-08 2011-09-21 厦门市三安光电科技有限公司 一种抗静电氮化镓基发光器件及其制作方法
KR100999692B1 (ko) * 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101028206B1 (ko) * 2010-04-08 2011-04-11 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
US9548286B2 (en) * 2010-08-09 2017-01-17 Micron Technology, Inc. Solid state lights with thermal control elements
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) * 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
KR102085897B1 (ko) * 2013-06-10 2020-03-06 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR102255196B1 (ko) 2014-02-03 2021-05-25 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조 방법
KR101553372B1 (ko) * 2014-03-28 2015-09-15 전북대학교산학협력단 자발 보호 기능을 겸비한 발광 소자
KR102224245B1 (ko) * 2015-01-26 2021-03-08 엘지이노텍 주식회사 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템
CN107681034B (zh) * 2017-08-30 2019-11-12 天津三安光电有限公司 微型发光二极管及其制作方法
US12507508B2 (en) * 2017-08-30 2025-12-23 Xiamen San'an Optoelectronics Co., Ltd. Micro light-emitting diode and micro light-emitting diode array
CN108172668B (zh) * 2018-01-16 2020-02-11 福建兆元光电有限公司 一种发光二极管
KR20200075430A (ko) 2018-12-18 2020-06-26 김은혜 미용실용 고객관리 카드
TWI827271B (zh) * 2022-09-23 2023-12-21 國立清華大學 光電元件

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JPH1065215A (ja) * 1996-08-22 1998-03-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
JP3787202B2 (ja) * 1997-01-10 2006-06-21 ローム株式会社 半導体発光素子
JP3257455B2 (ja) * 1997-07-17 2002-02-18 松下電器産業株式会社 発光装置
JP3914615B2 (ja) * 1997-08-19 2007-05-16 住友電気工業株式会社 半導体発光素子及びその製造方法
JPH11298041A (ja) * 1998-04-15 1999-10-29 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子及び光源装置
JP2950811B1 (ja) * 1998-05-22 1999-09-20 株式会社エイ・ティ・アール環境適応通信研究所 超格子半導体発光素子
JP3686569B2 (ja) * 2000-03-02 2005-08-24 シャープ株式会社 半導体発光装置及びそれを用いた表示装置
US6693352B1 (en) 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
JP2002368103A (ja) * 2001-06-05 2002-12-20 Hitachi Ltd 半導体装置とその製造方法
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003289176A (ja) * 2002-01-24 2003-10-10 Sony Corp 半導体発光素子およびその製造方法
TW577184B (en) * 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
TW579610B (en) * 2003-01-30 2004-03-11 Epistar Corp Nitride light-emitting device having adhered reflective layer
TWI229463B (en) * 2004-02-02 2005-03-11 South Epitaxy Corp Light-emitting diode structure with electro-static discharge protection
US20050218414A1 (en) * 2004-03-30 2005-10-06 Tetsuzo Ueda 4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8450760B2 (en) 2006-04-21 2013-05-28 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
US7994514B2 (en) 2006-04-21 2011-08-09 Koninklijke Philips Electronics N.V. Semiconductor light emitting device with integrated electronic components
WO2007122550A3 (en) * 2006-04-21 2008-03-06 Koninkl Philips Electronics Nv Semiconductor light emitting device with integrated electronic components
EP2225783A4 (en) * 2008-01-03 2013-10-02 Lg Innotek Co Ltd LIGHT-EMITTING SEMICONDUCTOR ELEMENT
WO2010009690A1 (de) * 2008-07-24 2010-01-28 Osram Opto Semiconductors Gmbh Strahlungemittierender halbleiterchip mit schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren
EP3128555A1 (de) * 2008-07-24 2017-02-08 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit integriertem schutz gegen elektrostatische entladungen und entsprechendes herstellungsverfahren
US8710537B2 (en) 2008-07-24 2014-04-29 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip
US8884336B2 (en) 2009-12-03 2014-11-11 Lg Innotek Co., Ltd. Light emitting device
US8294182B2 (en) 2009-12-03 2012-10-23 Lg Innotek Co., Ltd. Light emitting device
EP2330638A1 (en) * 2009-12-03 2011-06-08 LG Innotek Co., Ltd. Light emitting device
EP2390936B1 (en) * 2010-05-26 2014-03-19 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US8866179B2 (en) 2010-05-26 2014-10-21 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
EP2482318A1 (en) * 2011-01-26 2012-08-01 LG Innotek Co., Ltd. Light emitting device and fabricating method thereof
US9281341B2 (en) 2011-01-26 2016-03-08 Lg Innotek Co., Ltd. Light emitting device and fabricating method thereof
WO2012123840A1 (en) * 2011-03-14 2012-09-20 Koninklijke Philips Electronics N.V. Led having vertical contacts redistributed for flip chip mounting
US9246061B2 (en) 2011-03-14 2016-01-26 Koninklijke Philips N.V. LED having vertical contacts redistruted for flip chip mounting
US9722137B2 (en) 2011-03-14 2017-08-01 Koninklijke Philips N.V. LED having vertical contacts redistributed for flip chip mounting

Also Published As

Publication number Publication date
JP2006108682A (ja) 2006-04-20
TW200612541A (en) 2006-04-16
KR20060050956A (ko) 2006-05-19
TWI244748B (en) 2005-12-01
US7683383B2 (en) 2010-03-23
KR101056457B1 (ko) 2011-08-11
US20060081857A1 (en) 2006-04-20
JP5336030B2 (ja) 2013-11-06

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