TWI242647B - Probe for testing flat panel display and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a probe for testing a flat panel display device, in which a plurality of conductors having a parallel arrangement are stacked between a plurality of other conductors, a probe assembly having the probe, and a method of manufacturing the probe and the probe assembly. The present invention provides a probe for testing a flat panel display device comprising: a plate-like dielectric; a plurality of conductors being provided in parallel; and first trenches being provided on at least one plane of upper and lower planes of the dielectric to fix the plurality of conductors in the dielectric in a predetermined arrangement.

Description

1242647 Description of the invention: [Technical field to which the invention belongs] The present invention relates to testing methods for flat manufacturing. More specifically, the ut1 probe is not related to the probe of the indicator, and its ^ line configuration = Mingyu is used to test the plane board between other conductors, a probe group, and two complexes = conductors are stacked in the plural The needle and the method of the probe set are related to: wooden needle, the present invention and the manufacturing method of the probe basin and the probe used for testing the flat panel display. During the production process, there is no need to use a bonding branch in the MEMS unit. The process of sticking a needle conductor to obtain a precisely aligned conductor is related to the method of manufacturing the probe. The prototype is used to test a flat-panel display probe, in which a MEMS process on a single-sacrificial substrate is used to form a probe conductor on two planes of the single-sacrificial substrate. The present invention is also related to manufacturing the probe. Needle-related. [Prior art] In summary, a TFT-LCD (thin film transistor liquid crystal display) device is a flat panel display, which includes a lower panel with a predetermined size, which has a plurality of thin film private crystals (TFT) and pixel electrodes; and A color filter with a predetermined distance between the lower plate for coloring; a lower plate with a predetermined distance from the lower plate and sequentially having a common electrode; and a liquid crystal interposed between the upper and lower plates. The TFT-LCD device includes a plurality of TFTs, which are switching members, capacitor regions and auxiliary capacitor regions generated by liquid crystal between upper and lower plates; gate drive electrodes for driving ON / OFF of the TFTs; and for applying external images Of Signal

O: \ 89 \ 89662.DOC 1242647 Image signal electrode to display ^,, heart image (including moving image). "." Wooden needle set and flat panel display, clothing, calendar, flat panel display * ,, contact test process to confirm the H-type, hanging, sub-removal of bad flat panel display in advance. Type :: Probe probe set Needle instrument implementation. Various probes have been developed before. The probe probes include needle probe instruments and razor-shaped instruments. Probe probes and mems (micro-motor system) probes =: panel display The line width of the pattern has been extremely sharpened with the high integration of the flat panel display. Therefore, it is urgent to develop a probe that has excellent re-productivity and high productivity, and meets the fine pitch requirements of the thousand-panel display. [Summary of the Invention] The design of the present invention is to meet the requirements of the previous stage of development. One of the objectives of the present invention is to provide a probe for testing the flat panel display device, which can simplify the process, and thus reduce the process time, and A method for manufacturing the probe. The present invention also aims to provide a process capable of removing the process of adhering a probe conductor with a bonding machine in a -MEMS unit during a manufacturing process, and thereby obtaining a probe with extremely precise alignment. Conductor for testing pin of flat-panel display and method for manufacturing the same. The purpose of this month is to provide a pin for testing flat-panel display and a method for fabricating a single pin. The sacrificial substrate uses a manufacturing process, and the probe can form a probe conductor on two panels on the sacrificial substrate.

O: \ 89 \ 89662.DOC 1242647 / Purpose 'Invention of the present invention-a kind of sample-a kind of vibration pin to test the plane anti-', 'the display includes a type of plate dielectric, a plurality of flat Material, and at least in the upper and lower planes of the dielectric material, μ trenches, and the plurality of conductors are arranged and fixed in the county to provide another aspect of the present invention, to test the flat panel display. A needle, the display comprising a plurality of unit contact assemblies located at a predetermined interval and fixed on a lower portion of a film, wherein the film has a predetermined size, the unit contact assemblies each include a beam-shaped beam member, and The Fuzhongyi detection tip is located on one end of the beam member in an integrated manner. Another aspect of the present invention provides a probe for testing a flat panel display. The display includes a sacrificial substrate; a first trench formed by a lithography process and a last name engraving process; and a conductive film is formed. A predetermined distance between the conductors in the first trenches on the sacrificial substrate; a first dielectric formed on the conductors; and a lithography process and an etch; and The formed second trenches expose the conductors on a thousand surfaces below the sacrificial substrate, and a second dielectric formed by embedding a dielectric material in the second trenches. 1. The sample provides a needle formed using a single sacrificial substrate, including:-a plate-like dielectric; and a plurality of conductors, wherein the quasi-ditch is formed by a -lithographic process and a ㈣ process-one of the conductive materials Embedded in the trenches, where the plurality of guide systems are located on the upper and lower planes of the dielectric at predetermined intervals, and the seeker conductor formed on the upper plane and the lower plane The conductors formed on them are parallel.

O: \ 89 \ 89662.DOC 1242647 Another aspect of this description provides a use—a single sacrificial beauty probe, including: a type of plate-like first dielectric; _ γ of its presence-the first-dielectric The upper part forms a step; of: two: electric substance, said left, a plurality of conductors arranged with a predetermined P bow H5 to penetrate the first and second dielectrics. ^ By- Conductive materials are in each of these two types: the conductive layer on the surface. Ordinary exploration—provide a kind—use I—form the sacrificial substrate to form it.—Ten, dagger.—A dielectric formed by stacking ceramic plates on an epoxide plane; a predetermined A plurality of conductors formed on the upper and lower planes of the dielectric; one, a field inspection, and a predetermined plating method; a conductive layer on the plane of the conductors; and詨 八 ㊉ ^ The supporting components on the upper and lower planes of the temple to fix the positions of these conductors r ^ H H Another-secret provide-a kind of use-single-sacrificial substrate formation second class ::: a type of plate-shaped dielectric ; A plurality of conductors formed on the lower plane of the dielectric X at a predetermined interval; H predetermined: a conductive layer stacked on one of the planes of each of these conductors; and stacked: the position of the body. The support assembly on the lower surface is used to fix the guides. Another method is to provide a method for manufacturing a wooden needle for testing a flat panel display. A first trench forming step forming a first trench on at least the Γ plane, and a plurality of conductors are fixed on the dielectric in a pre-arranged configuration; and a stack of Nie-support components is on the dielectric. Plane or—support on the lower plane ^

O: \ 89 \ 89662.DOC 1242647 piece forming step ’to fix the conductors in the trench. 'Another aspect of the first invention of the present invention is to provide a method of a probe of a display device, including: a: M test a flat plate |) lithography process and a conductive film " manufacturing-conductor formation The steps are to use the -1 seek V pancreatic formation process on the upper and lower planes of a substrate to form a single-sacrifice case to form a conductor; _dielectric ...: + surface The photoresist pattern is formed on the photo-cable, and the first and second benefits are equal to that of the guide. Zhao Zhi opens the central part to form = i on each side. An etching process of the lower plane of the body; a companion path leading to each temple, 9, the supporting components in the trenches and 幵 j into a supporting component of the supporting component y of the completion step. Into a step, and-removing the sacrificial substrate. Another aspect of the present invention provides a method for providing a probe for a display device, including testing a flat panel display, a microphone, a lithography process, and a first bath. The first surname engraving process forms a first ditch formation step having a first ditch that goes through the bottom of a rounding process; a conductor forming step 'which uses a lithographic process to open the central portion of the first -ditch, and then Embedding a conductive material in the opening region to form a conductor; a dielectric forming step of forming a dielectric on the upper portion of each of the conductors using a lithography process and a dielectric film forming process; and a shift In addition to the completion process of the sacrificial substrate, another aspect of the present invention provides a method for manufacturing a probe chip for testing a flat panel display, comprising the steps of: forming a first protective film pattern on a sacrificial substrate So as to define the tip forming a plurality of unit contact components

O: \ 89 \ 89662.DOC -10- 1242647 end area '· Using the first protective film pattern as an etching mask, a trench is formed on the sacrificial substrate by performing an etching process; removing the first—protection = Pattern ': A second protective film pattern is formed on the sacrificial substrate where the first protective film is removed, thereby defining an area where the tips of the plurality of cell contact components are formed; by forming the second protective film pattern A sacrificial substrate is formed on the sacrificial substrate: a metal film forms a beam member of the unit contact assembly; the beam member of the unit contact assembly is opened by removing the second protective film pattern. The unit is opened with a predetermined ruler The sacrificial substrate with the material beam member of the contact component is cut with a film of a size on the sacrificial substrate of the cut square 'and the beam members of the unit contact component are attached and fixed on the lower part of the film; And opening the tips of the unit contact assembly by removing the sacrificial substrate where the film is attached and fixed. What's more obvious—provide a variety of methods—manufacture—use—single-sacrificial substrate probe method 'includes: a first-use-lithography and-sculpting process to form a first on the single sacrificial substrate above and below the plane Formation of the first trench of the trenches / steps where the single-sacrifice substrate has a predetermined thickness;-a conductor forming step of forming a conductor by embedding a pass-through material in the first trench, etc .; A second-first-wood repeated formation step is formed from ~ and an etching process on the lower part of these conductors; a dielectric formation step of forming a dielectric by scattering a conductive material into the u ; On at least one of the upper and lower planes of the sacrificial substrate where the electric substrate is formed, forming: a supporting component forming step of a selective component; and a finishing step of removing the sacrificial substrate. Using a single sacrificial substrate

OA89 \ 89662.DOC 1242647 probe method, including: a protective film, the first protective film formation step: early :: formed on the animal-the first-a predetermined thickness, in which the first, 5th Hai-sacrificial substrate with -Conductor forming step, ...: forming a pattern: forming an upper conductor on a pattern—forming a protective layer on the sacrificial substrate at the first V body—; Γ a second protective film forming step, in which the first Two guarantees one; ΓΓ support component;-forming a step of supporting the upper and lower supports in the second protective film pattern; forming a dielectric thunder by embedding a dielectric material in the temple trench The step of removing the sacrificial substrate in human years. , Π $ 成 步骤 'and-= another aspect of the Ming provides a method of manufacturing a using a single sacrificial substrate II: a method, including-in-the first channel of the predetermined part of the single-sacrificial substrate * the first channel The trench formation step, wherein the single-sacrificial substrate 糸 is made of a predetermined material A, and undergoes a polishing process to have a predetermined thickness: wherein the trenches are used to form a dielectric; and a dielectric material is embedded in , The dielectric formation step of forming the dielectric in the first trench, etc. The body formation step is performed by forming a protective film pattern on the sacrificial substrate and the lower plane where the dielectric is formed. A conductor is formed, and then a conductive material is arbitrarily inserted into the protective film pattern; and a finishing step of removing the sacrificial substrate. Another aspect of the present invention provides a method for manufacturing a probe using a single sacrificial substrate, including: forming a channel on a plane of one of the single sacrificial substrates, forming a pre-trained channel on Z, / 冓A trench forming step; a first protective film pattern is formed on the sacrificial substrate at the Xinchenger trench;

O: \ 89 \ 89662.DOC -12-l242647 Protective film formation step 'This will open the trenches and bury them in a trench, and the material will be in the trenches where the -protective film pattern is opened. The trench embedding step, in which the trench embedding material is removed by a surname engraving process; a brother is formed on the sacrificial substrate by a shadow process to form a second protective film on the lower surface. One guarantees compliance with the film pattern forming step, where the conductor is formed using the second protective film pattern; one is a conductor forming step for forming a conductor at a specific position defined by the second protective Teng Anshi skin pattern; one is Forming on the upper and lower planes of the sacrificial substrate where the temple conductor is formed—the first and third protective film pattern forming steps of taking the second protective film pattern, in which the first and second protective film patterns are used. The protective film pattern forms a supporting component; a branch component forming step of forming-selecting a component at a specific position bounded by the third protective film figure; and a removed portion for the trench buried material separation Sacrificial substrate and then remove the trench and embed End knot material step. [Embodiment] In the description of the present invention, note that the "probe" refers to the "probe structure π" in the present invention. First, in detail the detailed implementation of the probe for testing a flat panel display according to the present invention, the conceptual structure of the probe will be described first. As shown in Figs. 1 to 1C and Figs. 1 to 1 and 1, plate-like dielectrics ⑽ are made of a dielectric material such as Tao Wan. Dielectric 10 is preferably 240 microns thick. In addition, the dielectric: 10 has a stepped or slanted shape at both ends. In addition, because of the dielectric, 〃 ,, ## & pin shape and insulation function, the dielectric is preferably made of a hard material. Conductors 2 made of nickel (Ni) or nickel alloys

O: \ 89 \ 89662.DOC -13- 1242647 The tip has a sharp shape. There are different methods of manufacturing a conductor according to this embodiment. In the first specific embodiment, the trenches at the conductor insertion points are formed using a tangent tine process. The conductors with sharp ends are attached and fixed in the trenches, so that the conductors are located on the dielectric 10 . In the second specific embodiment, the position and size of the conductor are determined according to the lithography process, and are located on at least one plane above and below the dielectric at predetermined intervals. The conductors 20a and 20b are in contact with the upper and lower planes of the dielectric 10, respectively. Although two rows of conducting systems are formed on the dielectric substrate above and below, respectively, it is also possible to arrange the conductors in the dielectric 10. In addition, a single-layer probe is formed when a row of conductors are located within the dielectric, as shown in Figures 2a to 2c. Since the probe is viewed from the top of the probe, the conductors 20a and 20b are placed so that the conductor 20a on the plane above the shell 10 is located between adjacent conductors 20b on the plane below the dielectric. In addition, the lengths of the conductors 20a on the plane above the dielectric 10 are the same as the lengths of the conductors 20b on the plane below the dielectric 10. The conductors 20a and 20b protrude outward from the dielectric ⑺. The protrusions have the same length. As shown in FIG. 1c, the end portion of the conductor 20a on the plane above the dielectric 10 is more prominent than the end portion of the conductor 20b on the plane below the dielectric 10. In particular, the conductors 20a and 20b are formed such that a line u connecting the end portion of the conductor 20a on the plane above the dielectric 10 and the end portion of the conductor 2 cents on the plane below the dielectric 10 is relative to each The conductor surface has 30. To 60. The included angle is better. The thickness of the conductors 20a and 20b used is 60 to 5 microns.

O: \ 89 \ 89662.DOC -14-1242647 As will be described later, the main specific embodiment of the method for manufacturing a probe having a conductor on a dielectric fl0 and a bird for measuring a panel display is-. Brother-specific embodiment is a method for manufacturing a probe using a tangential sawtooth process. The second specific implementation is a method for manufacturing a probe using a profitable process. In the case of the _s process, a thin conductive material with better conductivity than the conductor can be formed on the surface of the conductor and the bird. The conductive material is preferably formed with a layer of mineral gold. Forming conductive materials, he and Yang changed the conductivity of each conductor. Mouth guard version In addition: It also has support components 30a and 30b that are 70% apart from epoxide, ceramic plate 'or epoxide and ceramic. The supporting component is connected to the upper part of the conductor ⑽ and 20b, and 俾 strengthens the support of the conductors 20a and 20b. Furthermore: The present invention also discloses single-layer probes and double-layer probes. As shown in Figure 2 ^ 2c, the early probe includes a plate-like dielectric 8 having a predetermined size, and a plurality of conductors 50 which penetrate the dielectric in parallel at a specific interval; and a plane above and below the dielectric 80. One of them is a plate-like supporting assembly 60. In the case of a MEMS process, a conductive material with excellent conductivity can be formed on the-plane of each conductor 50 in a single-layer probe. The conductive material is gold, so that the gold plating layer 70 is preferably formed. Single-layer probes and double-layer probes are the same, and the functions of the components are the same. Therefore, I will not repeat them here. (First specific embodiment). According to a specific embodiment, a trench is formed on a rectangular reinforced plate made of hard material by using a tangent square process, and a conductor is inserted and fixed in these wooden grooves to manufacture a probe for testing a flat panel display. So that

O: \ 89 \ 89662.DOC -15- 1242647 The conductor acts as a pin for testing flat panel displays. A first embodiment will now be described with reference to FIGS. 3 to 5. Figures 3a to 3e are flowcharts illustrating the method for testing the flat panel display probes. 4 views' and the method used to explain the method of manufacturing the probe, 2 March, the probe used to test the flat panel display and its manufacturing method. This branch is made of stone materials such as ceramics. Since the central groove 93 is located on one side of the thousands of planes above the branch floor slab to the side corresponding to the support slab 9. The upper flat surface is formed in the direction, so that the second protruding region 95 is obtained. The first protruding areas 91 and the central grooves 93 formed opposite each other may have tangent teeth or similar shapes. Next, as shown in Fig. 3b, a plurality of needle-shaped trenches 9l97b are formed on the support plate 90 and the upper surface of the support plate 95, respectively, by using the backing airflow of the clegusch | square saw. The plurality of trenches 97a and 97b are connected to the central ridge. In addition, on the first and second protruding areas Mi%, the second na has a phase difference ... the car is opposite to each other, as shown in Figure 3c. 2: The formed trench may be the trench formed on the first protruding area 91.间隔 Finely spaced, while the trenches formed on the second protruding area 95 are coarsely spaced, or vice versa. In particular, in terms of the trenches 97a and 97 kurtosis, it is preferred that the trenches formed are at the same level as the central trenches 93 or the trenches formed are deeper than the central trenches 93, so that the central trenches 93 are flat. The degree determines the flatness of the conductor in the channel.

O: \ 89 \ 89662.DOC -16-1242647, and then as shown in Figure 3d, the conductors with a predetermined length and a predetermined diameter have large sharp ends and are located in the first protruding areas of the support plate 90 respectively. W and trenches 97a and 97b formed in the second protruding region 95. Each of the conductors 98 has a predetermined length protruding outward from the support plate 90, so that one end of each conductor can be used as a contact component to directly connect to the test place of the flat panel display, and the other end can be used as Link components. The conductor% is made of tungsten or a tungsten alloy. 2 As shown in FIG. 36, 'A needle or a conductor (needle) 98 is inserted above the support plate 90. The adhesive is applied in the middle of the trenches 97a and 97b formed on the second protruding areas 91 and 95', and then an adhesive is applied. Such as epoxide and curing to attach to the conductor on the support board to make the probe. Specific embodiments of the method for manufacturing the probe described in FIG. 3 will now be described with reference to FIGS. 4a and 4b are perspective views illustrating a probe for measuring a smart flat panel display and a manufacturing method thereof according to another embodiment of the present invention. In a probe for testing a flat panel display and a method for manufacturing the same according to a specific embodiment of the present invention, as shown in FIG. 4a, another secondary support plate forming a secondary probe is attached to the first specific embodiment. Above the support plate 90. The manufacturing method of the support plate 100 and the support plate 90 here is the same. The probe located at the upper part is called the upper probe, and the manufacturing method of the probe which is called the lower vibrating needle in a specific embodiment is the same. That is, the trench 107a formed on the first protruding area 101 is connected to the middle and y clamp grooves 103, and the conductor 10a located in the trench 107a is attached with an adhesive such as an air-loop J lice compound 109. With fixed. In addition, another channel was formed on the second protruding area, but it is not shown in Figure 4a.

O: \ 89 \ 89662.DOC -17- 1242647 No ο Then, as shown in Figure 4b, the upper and lower probes are attached to each other with an adhesive such as an epoxide (not shown). The conductor i 〇8 of the upper probe (hereinafter sometimes referred to as the upper conductor) and the conductor 98 of the lower board pin (later sometimes referred to as the lower conductor are alternately arranged. The conductor U of each upper probe) The 8-ends protrude outwards more than the corresponding end of each conductor 总. The total length of the outward protrusions of the upper and lower conductors is the same, so that the upper and lower conductors have the same physical conditions. Each of the conductors 之 and 98-the end is sufficient The direct contact flat panel display is connected to the contact assembly at the test point, and the other end is used as the connection assembly. Although the double-layer probe is described in the specific embodiment, it should be understood that three or more can be manufactured according to the manufacturer's intention. Layer probe. In addition, you can also choose the attachment point of the upper and lower probes according to the manufacturer's intention. You can directly attach and fix the upper floor 100 of the upper probe on the support plate 90 of the lower probe. 5 a is a cross-sectional view illustrating a probe of another display according to the present invention and a manufacturing method thereof. A perspective view of a specific embodiment for testing a plane method; FIG. 5 b is a specific embodiment of FIG. 5 a for testing a flat panel. Panel display, as shown in Figures 5a and 5b, in the branch building 90 ° performs the following fabrication on the lower plane of another probe and its manufacturing method according to the present invention. That is, similar to the first embodiment, a central groove 112, a first protruding region 11 and a second projection are formed. Process of the area; formation of the first canal 116a and the second canal (not shown in the drawing; and formation of a guide through the first canal ma, the second canal (not shown) and the central groove 112

O: \ 89 \ 89662.DOC -18-1242647 The process of body 118 (with a predetermined length), so that the two ends protrude outward. Second, carry out the use of an adhesive such as epoxide on the plane below the support plate. A process for attaching and fixing the lower conductor 118 below the support plate 90. The conductors 98 formed on the plane above the support plate 90 and the conductors 118 on the support plate 90 and the lower plane are vertically alternated. One end portion of the conductor 98 on the plane above the support plate protrudes more outwardly than the corresponding end portion of each conductor 118 on the plane below the support plate. The total length of the upper protrusion of the upper conductor ⑽ and the lower conductor US is the same. (Second Specific Embodiment) The second specific embodiment is a method for manufacturing a probe using a MEMS process. Before describing a special example of the wooden needle method made by Nanada, common steps in the method of manufacturing a probe will be described. In the sacrificial substrate preparation step, the prepared sacrificial substrate has a silicon (Si) wafer or a substrate made of silicon. In summary, the preferred thickness of the sacrificial substrate is 400 to 500 microns. Then, in the step of forming a shell, a trench is formed on a region of the lower plane of the sacrificial substrate by an etching process. And then insert or pray the dielectric into the trench 'to form the dielectric on the sacrificial substrate. Dielectrics include ceramics, epoxides, and so on. In other words, an epoxide is applied to the trench, and a prefabricated ceramic plate of the same size as each trench is inserted and attached to the trench before the epoxy is cured, thereby forming a dielectric. Alternatively, a prefabricated m of the same size as each trench can be inserted, and then an epoxide is applied in the gap between the trench and the pottery board, so the trench and the pottery board are attached to form a dielectric.

O: \ S9 \ 89662.DOC -19- 1242647. Although the ceramic plate is a rectangular parallelepiped, it can also be a parallelogram or step shape, as shown in Figures 21a and 21b. / The manufacturing process of the predetermined portion of the τ plane on the sacrificial substrate includes a tangent process-a dry-etching process, wherein the protective film pattern formed by the photoresist is formed on the sacrificial substrate. Here, in the case where ㈣ is used as the sacrificial substrate τ, since the sacrificial substrate is a dielectric material ', a system for forming a dielectric on the upper portion of the sacrificial substrate can be omitted. Next, in the conductor forming step, the same pattern as the shape of the conductor is formed on the upper and lower planes of the sacrificial substrate, and then these patterns are accurately used to form the conductor everywhere. The guide system is preferably made of nickel (Ni) or a nickel alloy. First, use a photoresist at a precise position on the sacrificial substrate (where the conductor is formed) == a pattern with the same conductor shape. These patterns are then used to form conductors by electrolytic reading. As a result, the probe according to the present invention is superior in the arrangement interval, position, and spacing of the upper and lower conductors on the lower plane of the dielectric material! Accuracy and reproducibility, so it is compared with the case where the joint process is performed by human health. To reduce the failure rate. Since the guide system is formed by an electric mining process, a seed layer is required to be formed on the surface of the sacrificial substrate before the electric mining process to facilitate the electric mining process. The kind of sound here can be formed by ore reduction. In addition, the seed layer is made of Chin-Yin and copper (Cu). Qin layer has the function of improving the adhesion between the sacrificial substrate and the copper layer. The copper layer and J can be used as the plating seed layer in the post-plating process. In addition, the system is made of nickel (Ni) or a nickel alloy. At the support assembly forming step, attach and mold the support assembly to the sacrifice

O: \ 89 \ 89662.DOC -20. 1242647 Where a conductor is to be formed on the substrate. to make. In particular,… made by… or Tao Wan before the milk solidified, pre-apply epoxide and then attach the ceramic transformer board to obtain better branch components. " In other words, 'the support pattern is formed by using light to form a support pattern. In the end of the support group, the operator removes the surplus of the sacrificial substrate in the manufacturing process to obtain the probe. The second and second party: In terms of 'using a hard material such as ceramic as a sacrificial substrate ^ The method of manufacturing a probe includes a groove formation ㈣, which is a predetermined portion of the upper and lower planes of a single-sacrificial substrate made of a dielectric material and =: Degree groove, the predetermined thickness formed is a step of forming a supplementary tool for the shell using a light-holding process, which is formed by forming a protective film pattern for opening the sacrificial substrate and opening the metal material. Embedded in the trench to form a dielectric shell forming supplementary tool 'where the metal material is a material that can be selectively removed using a wet silver engraving process; the conductor forming step is to form a protective film pattern with the same shape as the disk conductor on a sacrificial substrate and These patterns are then used to form conductors at carefully erected places; the supporting component forming step is to form supporting components at the conductors to be formed on the upper and lower planes of the sacrificial substrate; and remove the dielectric formation supplementary tool from the sacrificial substrate. step. The hard materials here include ceramics, broken glass, and the like. The structure of a probe for testing a flat panel display and a method of manufacturing the same will now be described with reference to the accompanying drawings. (Specific Example 2 -1) Figures 6a to 6P are cross-sectional views illustrating a method of manufacturing a probe for testing a flat panel O: \ 89 \ 89662.DOC -21-1242647 display according to another embodiment. In the method for manufacturing a probe according to the specific embodiment described in Figs. 6a to 6p, the conductor and the alignment key are located on the plane above the sacrificial substrate, so as to facilitate the use of the alignment key to perform the process on its lower plane. As shown in FIG. 6a, a seed layer 126 formed on a sacrificial substrate 12 made of silicon and other materials by a deposition process such as a sputtering process is formed with a predetermined thickness, and then the seed layer 126 is coated with a predetermined thickness as a protective film. The first photoresist 128. The seed layer 126 is constructed to have a titanium layer 122 having a thickness of 500 angstroms and a copper layer 124 having a thickness of 5,000 angstroms. The copper layer 124 is substantially used as a seed layer 126 in a subsequent electroplating process. The titanium layer 122 is used to improve the adhesion between the sacrificial substrate 120 and the copper layer 124. Next, as shown in FIG. 6b, a first photoresist pattern 129 is formed to define a predetermined area for forming a conductor, and an alignment key in a subsequent process. Each conductor is a contact component that is in direct contact with the flat panel display being tested. The first photoresist pattern (M) can be formed by exposing a first photoresist 128 formed on the sacrificial substrate 0 by using a cover having a predetermined circuit pattern thereon, and then forming a conductor alignment key, and then developing it. Then, as shown in FIG. &Amp;, a conductive material such as a lock (Ni or alloy (Ni-Co, Nl_w_c.)) Is deposited using a power mining process on the sacrificial substrate 12 where the first photoresist pattern 129 is formed to form a hafnium conductive film. μ Wind obtains the V film 13 1. Then, the planarization process is used to planarize the plane above the sacrificial substrate 120. During the electrical process of performing the planarization process using the chemical mechanical polishing (CMP) method and the polishing method, the seed layer is used. The copper layer 124 in 126 serves as a source of the electroplating material.

O: \ 89 \ 89662.DOC -22- 1242647 In particular, "in the course of an ideal plating process for forming the conductive film 13 1", the conductive film 131 is formed only in the opening portion of the first photoresist pattern 129 In this case, the planarization process can be omitted. In addition, in the case where the conductive film 131 is formed using a method other than the plating process such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), the previous process of forming the seed layer 126 can be omitted. Next, as shown in FIG. 6d, a portion of the copper layer 124 is exposed by removing the first photoresist pattern 129, thereby forming conductors and alignment keys 132a and 132b. The first photoresist pattern 129 may be removed by a method such as a wet etching process using a chemical or a dry etching process. Next, as shown in FIG. 6e, in the wet etching process using chemicals, the conductor 13G and the alignment keys 132a # 132b are used as a cover, and the first photoresist pattern 129 is removed so that the titanium layer 122 and the copper layer 124 are formed. The seed layer 126 is exposed and removed to make the conductor! 30 and alignment keys 132 & 13 are completely exposed. Next, as shown in FIG. 6f, a certain amount of the second photoresist 134 is coated on the conductor 130 and the alignment keys 1323 and 1321 on the sacrificial substrate 120) to be completely exposed. Although the sacrificial substrate 12o fixed on the rotary chuck is coated here, the second photoresist U4 is sprayed on the sacrificial substrate 120 through a nozzle, so a certain number of second photoresists 134 can be coated. Next, as shown in FIG. 6g, a cover having a predetermined circuit pattern is placed on a sacrificial substrate 涂布 and coated with a second photoresist 134, and then exposed and developed to form a fully opened central portion of the conductor 130 and an alignment key. 132 & and the second photoresist pattern 136. Next, as shown in FIG. 6h, a support plate is formed with a dielectric material such as an epoxide closed conductor 1300: \ 89 \ 89662.DOC -23-1242647 ^ (fully opened with the second photoresist pattern 136) to form a support plate 138 〇 Here, an epoxide used as a support plate 138 can be formed by a printing method or the like. Then, as shown in FIG. 61, the central portion of the conductor enclosed by the private material such as the support plate 138 made of an epoxy material is flattened in the plane above the sacrificial substrate by a grinding process. A polishing process is performed here to facilitate subsequent polishing processes performed on the back plane of the sacrificial substrate 120. Next, as shown in FIG. 6j, the sacrificial substrate 12 is face down, and the back plane of the sacrificial substrate 120 is polished to a predetermined thickness, so as to adjust the etching depth of the sacrificial substrate 12 to a low height in the subsequent trench formation process. Next, as shown in FIG. 6k, a third photoresist 140 with a predetermined thickness is coated on the back plane of the sacrificial substrate 12 which has been ground to a predetermined thickness. The third photoresist 14 coating method is the same as the first and second photoresist 128 and 134. Then, as shown in FIG. 61, the third photoresist 140 is exposed by the mask with a specific circuit pattern and then developed, thereby forming a third photoresist pattern 142 for opening the central portion of the back plane of the sacrificial substrate 20. Next, as shown in FIG. 6m, the third photoresist pattern 142 is used as a cover to perform an etching process, and the seed layer 126 is completely etched to form a trench 144 for opening the sacrificial substrate 120. Here, the etching process is a dry etching process using a specific ratio of 讣 6, (^ 与 and 匕 mixed gas. More specifically, the so-called Bosch ⑺ is still used ...

O: \ 89 \ 89662.DOC -24-1242647 It is a reactive ion etching (RIE) derived from the deep trench etching method. Next, as shown in FIG. 6n, a certain amount of epoxide adhesive 146 is added to the trench 144 formed on the back plane of the sacrificial substrate 120, and then a support plate made of a ceramic plate of a predetermined size is added. Press and insert it into the trench 1 A #, thereby embedding and attaching the support plate 148 in the trench 144. Then, as shown in FIG. 60, the support plate 148, the dielectric plate 13 and the conductor 138 are exposed by removing the second photoresist pattern 136 and the first photoresist pattern 142 of FIG. 6n. & The second photoresist pattern 136 and the third photoresist pattern 142 are removed here by a dry etching process or a wet etching process using a chemical. Finally, as shown in FIG. 6P, a wet etching process using a chemical is performed on the sacrificial substrate 120, so that the end portion of each conductor 138 is exposed. The central portion of the lower plane of each conductor 138 is insulated from the dielectric plate 13 (), and the central portion of the upper plane of each conductor 138 is supported by the support plate 148, thereby obtaining a probe. The alignment keys 132 & 1321) and the residual seed layer 126 shown in FIG. 60 are removed here. (Embodiment 2-2) Figs. 7a to 7m are cross-sectional views illustrating a method of manufacturing a plate pin shown as a plate pin according to another embodiment. In the probe manufacturing method according to this embodiment, as shown in FIG. 7a, a seed layer 206 having a predetermined thickness is formed on a sacrificial substrate 200 made of silicon or the like by a deposition process such as a sputtering process, and then on The seed layer is coated with a first photoresist 208 having a predetermined thickness as a protective film. The seed layer 206 is composed of a titanium layer 202 and a copper layer 204. The copper layer 204 is substantially used as a source in the subsequent electroplating process. The titanium layer 20 is used to improve the sacrificial substrate

O: \ 89 \ 89662.DOC -25- 1242647 200 Adhesion to copper layer 204. The photoresist pattern 21 is used to define a predetermined area for forming a conductor in the first subsequent process as shown in FIG. 7b. The first photoresist pattern 2 1 can be formed by placing a cover of a predetermined circuit pattern that forms a conductor on the first photoresist formed on the sacrificial substrate of the figure, and then exposing and developing it. Then, as shown in FIG. 9, a conductive material such as nickel (Ni) or a nickel alloy is deposited on the sacrificial substrate by an electroplating process. A photoresist pattern 2 10 is formed to form a conductive film 2 12 for contact components. Then, a planarization process is used to planarize the plane above the sacrificial substrate 2000. The chemical mechanical polishing (CMP) method and the polishing method are used for planarization. During the electroplating process for forming the conductive film 212, the copper layer 204 is used as a source of electroplating materials. In particular, in the progress of the ideal electroplating process for forming the conductive film 212, only in the case where the conductive film 212 is formed in the opening portion of the first photoresist pattern 20, the planarization process can be omitted. In addition, in the case where the conductive film 212 is formed by a method other than the electroplating process, such as physical vapor deposition (pVD) and chemical vapor deposition (CVD), the previous process of forming the seed layer 206 can be omitted. Next, as shown in FIG. 7d, after removing the second photoresist pattern 21o, an etching process is performed by using the conductive film 212 formed in the opening portion of the second photoresist pattern 210 of FIG. 7c as a self-backing mask. A seed layer 206 composed of a titanium layer 202 and a copper layer 204 that is left on the lower portion of the second photoresist pattern 210 in FIG. 7C is removed. Here, the second photoresist pattern 2 is removed by wet etching or dry etching, and the seed layer 206 may also be removed by wet etching or dry etching. O: \ 89 \ 89662.DOC -26- 1242647, and then as shown in FIG. 7e, the third photoresist 214 coated with a plurality of layers of the first photoresist 214 in FIG. The second photoresist 214 is coated with a photoresist spin coating method of 4 or the like. Next, as shown in FIG. 7f, a mask with a specific circuit pattern is placed on the sacrificial substrate, and a third photoresist 214 is coated. Then, it is exposed and developed, and hunted to form a contact component for opening. A photoresist pattern 222 at a central portion of the conductive film 212. Then, as shown in FIG. 7g, a certain amount of an adhesive 216 such as an epoxide is applied to the opening portion opened with the third photoresist pattern 222, and then a dielectric material having a predetermined size such as a support plate 218 made of ceramic is inserted And attached to the opening of the photoresist pattern 222. '— Next, as shown in FIG. 7h', by removing the third photoresist pattern 222 of FIG.%, The conductor composed of the support plate 218 and the conductive film 212 is exposed. Finally, as shown in FIG. 7i, the support plate 218 and the conductive film 212 in the sacrificial substrate 200 of FIG. 2 are removed by using a difficult-to-etch process, etc., and the seed layer 206 on the lower part of the conductive film 21 is completed to complete the tooling. Probe for conductive film. It is preferable to sequentially remove the sacrificial substrate 200 and the seed layer 206 composed of the copper layer 202 and the titanium layer 204 in a series of wet etching processes using different chemicals. In addition, a process of attaching a dielectric material such as an epoxy on the back plane of the conductive film 212 of the completed probe is additionally performed. (Embodiment 2-3) FIGS. 8a to 8t are cross-sectional views illustrating a method of manufacturing a probe for testing a flat panel display according to another embodiment. In the probe manufacturing method according to the specific embodiment, as shown in FIG. 8a, O: \ 89 \ 89662.DOC -27-1242647 coats the first photoresist 252 on a sacrificial substrate 252 made of silicon and other materials. Here, the first photoresist 252 is coated by a well-known photoresist spin coating method or the like. Then, as shown in FIG. 8b, a subsequent process is performed on the sacrificial substrate 25, thereby forming a first photoresist pattern 254 to define the alignment key and the shape of the contact component. Here, a first photoresist pattern 254 is formed on the sacrificial substrate 25 by aligning a predetermined mask, and then it is exposed and developed. Then, as shown in FIG. 8c, the first photoresist pattern 254 on the sacrificial substrate 250 is used as a cover, and an etching process is performed to form the first trench 25 and 25 讣 and the first trench 258 'to form a sacrificial substrate. Align the keys in 25 ° with the contact assembly. This is a process of forming the first trenches 256a and 256b and the second trench 258 by a dry etching process using a reactive gas. After removing the first trench 25 formed on the sacrificial substrate 25 to form the first photoresist pattern 254 at 25 处 and the second trench 258, a seed layer 26 having a predetermined thickness is formed using a process such as a sputtering process. 〇. The seed layer 260 is composed of a titanium layer 261 with a thickness of 500 angstroms and a copper layer 262 with a thickness of 5,000 angstroms. The copper layer 262 is substantially used as a seed layer 26 in the subsequent electroplating process. The titanium layer 261 is used to improve the adhesion between the sacrificial substrate 25 and the copper layer 262. Then, as shown in the figure, a certain amount of second photoresist 264 is applied on the sacrificial substrate 250 to form a seed layer 260. Here, a second photoresist can be applied by a well-known photoresist spin coating method or the like. Then, as shown in the photo, a second photoresist at the sacrificial substrate 250 is exposed and developed to form a second photoresist pattern 265, and the areas where the first trenches 256a and 256b and the second trench 258 are formed are defined.

O: \ 89 \ 89662.DOC -28- 1242647 Then as shown in FIG. 8g, a conductive material such as nickel or a nickel alloy (Ni-Co, Ni-W-Co) is deposited on the sacrificial substrate 250 by a plating process, and there is a second light Where the resist pattern 265 is formed, a conductive film 266 is formed. Here, during the electroplating process used to form the conductive film 266, the copper layer 262 in the seed layer 26 is used as a source of electroplating material. Next, as shown in FIG. 8h, the conductive film 266 is formed on a plane above the sacrificial substrate 250 to be planarized. The planarization process of the plane above the sacrificial substrate 250 is performed by a chemical mechanical polishing (CMP) method, a polishing method, or the like. In addition, in the course of an ideal plating process for forming the conductive film 266, only when the conductive film 266 is formed in the opening portion of the second photoresist pattern 265, the planarization process can be omitted. Next, as shown in FIG. 8i, a certain number of third photoresists 268 are coated on the sacrificial substrate 250 to complete the planarization process. Here, the third photoresist 268 can be coated by a well-known photoresist spin coating method or the like. Next, as shown in FIG. 8j, a third photoresist pattern 270 is formed to turn on the central portion of the conductive film 266 formed on the sacrificial substrate 25o. Here, the third photoresist pattern 270 can be formed by using a mask exposure process and a development process. Next, as shown in FIG. 8k, a dielectric plate 272 is formed by embedding a dielectric material such as an epoxide in the opening portion opened by the third photoresist pattern 270. Then, as shown in FIG. 81, a dielectric plate 272 is planarized on a plane above the sacrificial substrate 250. This planarization is performed by a chemical mechanical polishing (CMp) method, a polishing method, or the like. Next, as shown in FIG. 8m, the sacrificial substrate 250 faces downward, and the back surface of the sacrificial substrate O: \ 89 \ 89662.DOC -29- 1242647 250 is polished to a thickness of '100, and the polishing process is performed to adjust the subsequent trenches: In the manufacturing process, the #etching depth of the sacrificial substrate 25 () is deeper than the low height. Next, as shown in FIG. 8n, a fourth photoresist 274 with a predetermined thickness is applied on the back plane of the sacrificial substrate 25 which has been subjected to a polishing coat. The fourth photoresist 274 can be formed by a well-known photoresist coating method. As shown in FIG. 80, the fourth photoresist 274 formed on the sacrificial substrate 25 is exposed and then developed, thereby forming a sacrificial substrate M for opening. A fourth photoresist pattern 276 in the center of the back plane (the center of the sacrificial substrate 25). Then, as shown in FIG. 8ρ, an etching process is performed using the fourth photoresist pattern 276 as a mask. Thereby, a third trench 278 for opening the conductive film 266 is formed on the back plane of the sacrificial substrate 250. Here, the etching process is a dry etching process using a mixture of SF0, (: 4k and 02) with a specific ratio. More specifically, the so-called Bosch process is used to perform the etching process. Reactive ion money engraving (RIE) of the trench trench method. Next, as shown in FIG. 8q, a certain amount of epoxy adhesive 28 is applied to the third trench 278 formed on the back plane of the sacrificial substrate 25. Then, the support plate 282 made of a ceramic plate of a predetermined size is pressurized and inserted into the trench 278 ', thereby burying and attaching the support plate 282 in the third trench 278. Then, as shown in FIG. 8r, The planarization process is used to planarize the support plate 282 on the back plane of the sacrificial substrate 25 to the third trench 278. The planarization process is performed by a chemical mechanical polishing (CMP) method or a polishing method. Then, as shown in FIG. 8s, The third photoresist pattern 270 and the fourth photoresist pattern 276 are removed from the seed layer 260. Finally, as shown in FIG. 8t, the sacrificial substrate 250 is removed by an etching process, thereby O: \ 89 \ 89662.DOC -30-1242647 The completed probe has an attachment on top of a conductor 284 with an adhesive 280 The supporting member 282 and the dielectric plate π on the lower part of the conductor 284]. FIG. 9 is a perspective view illustrating a method of manufacturing a probe for a tester according to another embodiment. The board is not in accordance with this embodiment. In the probe manufacturing method, the first sacrificial substrate 28 and the second sacrificial substrate 280 where the conductor 130 of FIG. 60 is completely exposed, or the first sacrificial substrate 280 and the second sacrificial substrate 280 where the conductor 284 of FIG. 8t is completely exposed are prepared. The sacrificial substrate 282. Here, the alignment key 288, the dielectric plate 284, and the conductor 286 are exposed to the first sacrificial substrate 280 and the second sacrificial substrate 282. Then, the alignment key 288 or the first Matching the conductor 284 of a sacrificial substrate 280 with the conductor 284 of the second sacrificial substrate 282 attaches the first sacrificial substrate 280 and the second sacrificial substrate 282 together, and then attaches them to each other with an adhesive. The plurality of conductors 286 formed on the sacrificial substrate 282 are vertically disposed in a gap space between a plurality of adjacent conductors 286 formed on the first sacrificial substrate 280, so that the conductors 286 of the second sacrificial substrate 282 are vertically disposed. Between adjacent conductors 286 of the first sacrificial substrate 280, and the ends of each conductor are more horizontally protruded than the ends of the first-sacrificial substrate (where the conductor is a multilayer structure). The same wet etching process removes the first and second sacrificial substrates 280 and 282 to manufacture a multilayer probe at the stacked probe. Although the double-layer probe is described in this embodiment, it should be understood that : \ 89 \ 89662.DOC -31-1242647 The intention is to make three or more layers of probes. Figure 10a is a perspective view illustrating a probe according to another embodiment; Figure ⑽ is a sectional view thereof. As shown in FIGS. H) a and 10b, the probe according to a specific embodiment of the present invention is composed of a double-layer structure, wherein an adhesive tool such as an adhesive will be used on the first probe 300 and the second probe 310. The formed dielectric plates 306 and 316 are attached together, thereby stacking the first probe 300 and the second probe 31q. In the first needle 300 and the second probe 3 10, a plurality of conductors 302 and 312 are attached to the lower portions of the support plates 308 and 318 made of ceramics or the like at predetermined intervals, respectively. For example, dielectric plates 306 and 316 made of epoxides 304 and 3 μ are attached to the central portions below the conductors 302 and 312, respectively. More specifically, each conductor of the second probe 31 is vertically disposed in a gap space between adjacent conductors 302 of the first probe 300, so that the distance between the conductors 302 and 312 of the multilayer probe can be adjusted to the extreme. short. In this stacked structure, each of the conductors 312 of the second probe 31 and the tip of each of the conductors 302 of the first probe 300 protrude in a horizontal direction. In addition, in another specific embodiment, the supporting plates 308 and 318 formed on the first probe 300 and the second probe 310, respectively, are attached together by an adhesive tool such as an adhesive, thereby obtaining A double-layered structure is formed in which the first probe 300 and the second probe 310 are stacked. Furthermore, in another specific embodiment, the first probe 300 or the second probe is supported by the private boards 306 and 316 and the first probe 300 or the second probe 31 The plates 3 08 and 08 are attached together by an adhesive tool such as an adhesive, so as to obtain a double-layer structure in which the first probe 300 and the second probe 3 10 are stacked.

O: \ 89 \ 89662.DOC -32- 1242647 Therefore, the first probe 300 and the second probe 3 10 are double-layer probes located in a stacked structure and merged into a probe set (not shown) to Confirm the normality of the flat panel display device obtained through a series of production processes. One end of each of the conductors 302 and 312 of the clothing probe is connected to one of the test positions of the flat panel display, that is, connected to the pad electrode, and the other end is connected to a tape and reel package connected to the driving chip ( TCP) to confirm the normality of the flat panel display.纟 ,,, and No (Embodiment 2-4) Fig. 11 is a perspective view illustrating a probe for testing a flat-panel display according to the heart of another embodiment. As shown in FIG. U, the probe has a plurality of unit conductors 32 each having a rod-shaped beam member 322, and one end of the beam member 322 has a detection tip 324a integrated therewith, and the other end of the beam member 322 has ^ and ^ Integrated detection tip 324b. The plurality of unit conductors 32 are arranged at predetermined intervals. The beam member 322 and the tips 3243 and 324b here are made of a metal material with excellent conductivity and ductility such as (Ni) or nickel alloy (Ni_co), and the ends of the tips 324a and 324b are rounded. (R〇unding) process to suppress the generation of particles. In addition, 'pressurization process and heating process will be a predetermined size and made of light-transmissive materials such as epoxide or poly-para-dimethy tallow ~ 4 T date The light-transmissive film 342 is attached to the plurality of unit conductors 320. Therefore, the plurality of unit conductors are incorporated into the probe set to confirm the normality of the display via the probe. Serial production of flat plates

O: \ 89 \ 89662.DOC -33- 1242647 连结 The connection tip 32 of the needle piece is connected to the tape package (TCP) 'probe chip connected to the driver chip. The detection tip 324a of the probe piece is repeatedly in contact with the flat panel display = test place That is, contact with the rhenium electrode, thereby confirming the flat panel display: In addition, in another embodiment, the connection tip 324b of the beam member 322 of each unit contacting component may not be provided. Each unit conductor 320 without the connection tip 324b can be connected to the tape (TCP) via an anisotropic conductive film (ACF). Figure 12a to 12i are diagrams illustrating probes for testing flat panel displays shown in Figure u. Sectional view of the manufacturing method. Referring now to Fig. 12, a method for testing a flat panel display according to the present invention will be described. First, a photoresist pattern made of silicon with a specific directivity such as (1, 0, 0): a plate: 330 is formed in a subsequent process to form a first trench 33 and a second trench 334b. 332. -The first photoresist pattern 332 is composed of a photoresist with high sensitivity. The formation of the first photoresist pattern 332 is a spin coating process that spin-coats a photoresist with a thickness of about 2 micrometers on the plane before the substrate 330, and then performs the process and = then, as shown in FIG. 12b, using the sacrificial substrate The first photoresist pattern 332 formed on 33 ° is a mask, and the first process is performed to form the first Zhugou 334a and the second canal 334b (the detection tip 32 牦 and the connection tip 324b are formed therein). ). The first etching process for forming the trenches 334a and 334b may be a wet etching process using a chemical compound of potassium hydroxide (K0H) and deionized water mixed at a predetermined ratio.

O: \ 89 \ 89662.DOC -34- 1242647 Using a chemical wet etching process to anisotropically etch a sacrificial substrate with a specific direction, thereby forming the first channel trench 334a and the cone-shaped first trench 334a and第二 沟沟 334b. / Later, as shown in FIG. 12e, with the first photoresist pattern 332 as a mask, the first-name engraving is performed to form a first channel trench with a cross-sectional pyramidal shape or a cross-sectional cone shape. Shout deep, and make the trenches and trenches 3 3 4b go through the rounding process. Here, the _ process is a dry etching process using a specific ratio of yang and C4m 0 2 mixed gas. The more special a ’is the use of the so-called Bosch process to carry out the second money engraving. The private ion source, the self-reaction ion money engraving method, is used to engraving magic. Next, the first trench 334 & and the first and second cone trenches with a cross-sectional pyramidal shape and the first and second trenches are engraved by the ditch 334b. Rounding process. Then, as shown in FIG. 12D, after the first photoresist pattern 332 in the figure is removed by a wet etching process, a seed layer 336 is formed on the sacrificial substrate 33 which has previously undergone the second process, and is used as a seed layer 336 in the subsequent process. Use a copper layer with a thickness of 2, Angstroms to 3, Angstroms. Here, a copper layer can be formed by a physical deposition method such as a sputtering process. Next, as shown in FIG. 12e, a second photoresist pattern 338 is formed, and the region where the beam member 332 is to be formed in a subsequent process is opened. A second photoresist pattern 338 composed of a photoresist having a high photosensitivity similar to the first photoresist pattern 332 is formed by a spin coating process, an exposure process, and a development process.

O: \ 89 \ 89662.DOC -35- 1242647 and then as shown in Figure 12f, the electron microscopy process is used to form a metal material with excellent conductivity and ductility such as nickel (Ni) or nickel alloy (Ni_c0, Ni_w_c〇). A metal film having a predetermined thickness is then planarized on a plane above the sacrificial substrate 33 by a chemical mechanical polishing (CMp) method, an etchback method, a polishing method, or the like to form a beam member 340. However, the formation process of the seed layer 336 used in the electroplating process in the previous implementation process can be omitted. The chemical vapor deposition (CVD) method, physical vapor deposition (PVD) method, etc. are used to form Ni, Ni_co, Ni_W- A metal film with a predetermined thickness, such as C0, is used to form the beam member 34o. In addition, after the% flattening process, an additional cleaning process is performed to remove organic materials and particles on the sacrificial substrate 330. Next, as shown in FIG. 12g, after the second photoresist pattern 338 of FIG. 12f is removed by a wet etching process, the second photoresist pattern 338 is removed from the sacrificial substrate 330 and cut in a square. Then, as shown in FIG. 12h, a thin film 342 made of a light-transmitting material such as an epoxide or parylene is placed on the sacrificial sacrificial substrate 33. Then, the thin film 342 is attached to the sacrificial substrate 33 using a pressure process and a heating process. The light beam member 340 formed on the sacrificial substrate 33 is on a plane. Here, the upper portion of the beam member 34o formed of a metal film on the sacrificial substrate 33o is inserted and attached to the thin film 342 by pressing and heating the thin film 342. Finally, as shown in FIG. 121, the sacrificial substrate 330 is removed by a wet etching process using a chemical, thereby completing a probe sheet having a rod-like beam member 340, and two ends of the beam member 340 are divided at the junction tips 324a. With link tip 324b. O: \ 89 \ 89662.DOC -36- 1242647 (specific embodiments 2-5) In the first-specific embodiment of the method for manufacturing a probe for testing a flat panel display according to this month, as shown in Figure 13a It is shown that a state with a pre-thickness thickness polished on both sides is used as the sacrificial substrate. The sacrificial substrate 400 after the grinding process or the polishing process has a thickness of about 400 to 5000 microns. Next, as shown in FIG. 13a (b), a lithography process is used to form a first photoresist pattern corresponding to the shape of the probe on both planes of the sacrificial substrate 400 and the side. Here, the patterns 40 and 40 are formed by the lithography process, so that they can be accurately set at a desired level. Therefore, compared with manual operation, the error can be further improved. That is, 'a plurality of conductors of the same size J can be formed on the sacrificial substrate wound at the same interval. In particular, the conductor fairy on the plane eight above the sacrificial substrate 400 and the plane B below the sacrificial substrate Yang can be alternately formed at precise positions. On the conductor 412b. Therefore, as shown in FIG. 13a (b), the first photoresist patterns 4002 & and 4202 formed on the sacrificial substrate 400 above and below the surface are formed by alternating probes formed later. Formed in an asymmetric structure. Then, as shown in FIG. 13a (c), the area on the plane a above the sacrifice substrate 400 is opened by the first photoresist pattern 402a, and is etched by anisotropic dry etching to sacrifice the substrate 4 A groove 404 having a probe shape is formed on the plane A above. Next, as shown in FIG. 13a (d), the lower plane B of the sacrificial substrate 400 is also etched by the same process as the upper plane, so as to form a groove 406 with a probe shape. Here, the grooves 404 and 406 formed on the sacrificial substrate 400 above and below the substrate 3 have an asymmetric structure in which the grooves 404 and 406 alternate with each other.

O: \ 89 \ 89662.DOC -37- 1242647 In addition, the etching depth range of the grooves 404 and 406 formed on the sacrificial substrate 400 above and below the plane A and B is 70 to 100 microns, which is for subsequent planarization The removal depth of the process is considered, so the etching depth is relatively deeper than the obtained conductor depth (ie, 60 microns). Then, as shown in FIG. 13a (e), the first photoresist patterns 402a and 402b remaining on the sacrificial substrate 400 above and below the planar substrate 3 are removed by a wet etching process using a chemical solvent. Next, as shown in FIG. 13a (f), seed layers 408a and 408b are formed, and a plating process is performed to form conductors on two planes of the sacrificial substrate 400. The seed layer here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is used as a seed layer for electroplating in the subsequent plating process, and the titanium layer is used to improve the adhesion between the sacrificial substrate 400 and the copper layer. Then, as shown in Fig. 13a (g), a second photoresist pattern a "41b is formed by a photolithography process to open predetermined portions on the two planes a and b of the sacrificial substrate 4". As shown in the figure, the electrolytic f electric process is used to form the conductors 412a and 412b opened on the two planes A and B of the sacrificial substrate 00 with the second photoresist pattern 41. The second photoresist pattern 41 (41) OB is a conductive material such as nickel (Ni) or nickel alloy (Co Nl-W_co) deposited by electrolytic shell plating to form conductors 412a and 412b on a sacrificial substrate 400. ', Figure 13b ⑴ to ⑻ The longitudinal and lateral views are explained to explain the present invention. As shown in FIG. 13 (1), the part protruding from the two planes of the second photoresist pattern and the plane 400 is removed to paste the sacrificial substrate.

O: \ 89 \ 89662.DOC -38- 1242647 The two planes A and B are flattened. The planarization process here is performed using a chemical mechanical polishing (CMP) method, a polishing method, a lapping method, and a polishing method. However, in the process of forming an ideal electric mining process for forming the conductors 412a and 412b, the conductors 412a and 412b are formed only in the grooves 404 and 406 having a probe shape (using the second photoresist patterns 41a and 41). b)), the planarization process can be omitted. In addition, after the conductors 412a and 412b are flattened, a gold bonding layer is formed on the upper surface thereof in gold plating to improve the conductivity of the conductor. In addition, in the case where the conductors 412a and 412b are formed by methods other than the plating process such as physical vapor deposition (pVD) and chemical vapor deposition (CVD), the previous process of forming the seed layers 408a and 408b can be omitted. Next, as shown in FIG. 13b (a), a third photoresist pattern 414 is formed by a photolithography process to open the central portion on the plane a above the sacrificial substrate 400. Next, as shown in FIG. 13b (k), the area turned on by the third photoresist pattern 414 is etched by an isotropic dry-etching process. Here, half of the entire sacrificial layer including the place where the conductor 41 仏 is formed is etched to form the first trench 416. Next, as shown in FIG. 13c (l), after the soil oxide 420 applied to the first trench 416 as a mediator is used for thermoplasticizing, and before the epoxy 420 is cured, it will be used for support. The Taoman plate 418 is adhered to the upper part. Since the ceramic plate 4ΐδ is made of hard shell material, the ceramic plate has a supporting component function to resist the specific external force applied to the probe and avoid the deformation of the probe, and can achieve the function of maintaining the appearance of the probe. After the process of forming the epoxide 420 and the ceramic plate 418 is completed, the process on the plane a above the sacrificial plate 400 is completed. The remaining processes on the plane B below the sacrificial substrate 400 will now be described.

O: \ 89 \ 89662.DOC -39- 1242647 Then, as shown in FIG. 13 (c), a fourth photoresist pattern 424 is formed by a photolithography process to open the central portion on the plane b below the sacrificial substrate 400. Next, as shown in FIG. 13c (n), the U isotropic dry button engraving process will use the last name of the area where the fourth photoresist pattern 424 is turned on. Here, half of the entire sacrificial layer including the conductor 41 to form the place is formed to form a second trench 426 for exposing the epoxide 420. Then, as shown in Fig. 13d (o), an epoxide 428 applied to the second trench 426 as a dielectric is thermally plasticized. Then, as shown in the figure, similar to the upper plane a, a ceramic plate made of a hard material is also attached to the upper portion of the epoxide 428 in the lower plane B of the sacrificial substrate 400. In addition, as shown in FIG. 13d (P), the photoresist patterns 414 and 424 on the upper and lower planes of the sacrificial substrate 400 are simultaneously removed by using a predetermined chemical, and then using chemicals such as potassium hydroxide (KOH) and tetramethyl hydroxide Ammonia (TMAH) selectively etches the remaining sacrificial substrate 400. As a result, the upper and lower conductors 412 & and 41213 are alternately configured for testing the conductors of the flat panel display according to the MEMS process. In another word, "the isotropic dry name engraving process for forming the trenches 416 and 426 shown in Fig. 13b (k)" is a dry etching process using a specific proportion of Sp6 and a mixed gas. More specifically, the so-called Bosch process is used to perform the money engraving process, which is a reactive ion etching (RIE) derived from the deep trench etching method. After completing all processes performed on planes A and B above and below the sacrificial substrate 400, the sacrificial substrate 400 is cut, and the plurality of conductors formed on the plane above the sacrificial substrate 400 are divided into a predetermined number Probe into the predetermined unit of conductor

O: \ 89 \ 89662.DOC -40-1242647 needle group. As shown in FIG. 25, the sacrificial substrate 400 is cut so that each conductor group has 12 conductors, and then a probe is formed. °, each of the conductors formed on the upper plane A protrudes outwardly than one of the ends of the body formed on the lower plane b, and the lengths of the outward protrusions are the same. Therefore, the probes manufactured by the previously disclosed method facilitate the operation of the probes because the pressure applied to the upper and lower probes is equal. The appearance of the probe manufactured according to the previous method is shown in Figure 14. FIG. 14 is a perspective view of a probe with a single-sacrificial substrate manufactured by the process shown in FIG. 13. / As shown in Fig. 14, the conductors 36 (^ and 36 平) are arranged on the upper and lower planes of the sacrificial substrate at corresponding predetermined intervals, respectively. It is formed in the first trench formed on the upper and lower planes of the sacrificial substrate. In addition, the conductive layers are made of a thin layer of a material having a higher conductivity than that of the Temple ’s conductor. On a plane to improve the conductivity of the conductors 360a and 360b. In addition, dielectrics are formed on the top and bottom of the probe. "And% ^. The dielectric 362a and the dielectric are applied by applying a dielectric f material to The money engraving process is formed in the second trench on the two planes of the sacrificial substrate. The dielectric material here is preferably an epoxide. Finally, there is a supporting component 364 in the probe. The supporting component 364 is connected to The dielectrics 362a and 362b are formed on at least the outer plane. It is preferable that the supporting members are made of hard materials. The supporting members are preferably formed by attaching ceramic plates to the dielectrics 362a and 362b. ...

O: \ 89 \ 89662.DOC -41-1242647 (specific embodiments 2-6) As shown in Fig. 15a (a), a flat silicon (§ 丨) wafer with both surfaces polished is prepared as a sacrificial substrate 450. The sacrificial substrate 450 obtained by the grinding process or the polishing process has a depth of 400 to 5000 microns. Then, as shown in Fig. 15a (b), a first layer 452 is formed on the entire upper plane A of the sacrificial substrate 45 by a sputtering process. The first layer 牦 2 here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is essentially used as a seed layer in the subsequent electroplating process. The titanium layer is used to improve the adhesion between the sacrificial substrate 45 and the copper layer. Next, as shown in FIG. 15a (c), a first photoresist pattern 454 is formed by a lithography process to open a predetermined conductor formed on the plane a above the sacrificial substrate 45. Then, as shown in FIG. 15a (d), The electrolytic plating method deposits a conductive material such as nickel (Ni) or a nickel alloy (Ni-Co, Ni_w_c0) to form the first conductor 456. Next, as shown in Fig. 15a (e), the upper plane of the first conductor 456 is flattened by removing uneven portions of the plane above the first conductor 456. The planarization process is performed using a chemical mechanical polishing (CMP) method, a polishing method, a folding method, a polishing method, and a polishing method. However, in the process of forming an ideal plating process for forming the first conductor 456, the planarization process may be omitted only in the case where the first conductor 456 is formed using the first photoresist pattern 454 turned on. In addition, in the case where the first conductor 456 is formed by a method other than the electroplating process such as physical vapor deposition (pvd) and chemical vapor deposition (CVD), the process of forming the first layer 452 previously may be omitted. Then, as shown in Fig. 15a (e), a gold plating process is performed on the upper portion of the first conductor 456 to form a first gold plating layer 458. The purpose of this process is to reform

O: \ 89 \ 89662.DOC -42- 1242647 Needle conductivity. Then, as shown in FIG. 15a (f), the first photoresist pattern 454 is removed by a wet engraving process. The exposed part of the first layer 452 is also removed here. Next, as shown in FIG. 15a (g) ', a second photoresist pattern 460 is formed by a lithography process to open a predetermined portion of the first conductor 456. Next, as shown in Fig. 15a (h), a thermoplastic epoxide 462 having an adhesive function is applied to the first conductor 456 using the second photoresist pattern 46o to open. Then, as shown in Fig. 15b (a), before the epoxy is cured, a ceramic plate 464 is attached to the upper part of the epoxy 462. Next, as shown in FIG. 15b (a), the planar surface of the ceramic plate 464 is planarized by a grinding process. The planarization process here is the same as the first embodiment. When the planarization process is completed, the process on the plane A above the sacrificial substrate 45 is completed. The process on the plane B below the sacrificial substrate 450 will now be described. First, as shown in FIG. 15b (k), the sacrificial substrate 45 is faced down. Next, as shown in FIG. 15b (l), the plane B below the sacrificial substrate 45 is removed to half of the original thickness of the sacrificial substrate 450 by a polishing process. Therefore, after grinding and manufacturing, the remaining sacrificial substrate has a depth in the range of about 24 to 25 microns. Next, as shown in FIG. 15b (m), a third photoresist pattern 466 is formed by a lithography process to open a predetermined dielectric portion on the plane B below the sacrificial substrate 450. Then, as shown in FIG. 15b (n), a predetermined portion of the sacrificial substrate 450 opened by the third photoresist pattern 466 is removed by using an anisotropic dry etching process to form a trench 467. The seed layer 452 is also removed at the same time. Then, as shown in FIG. 15b (o-1), a thermoplastic epoxy O: \ 89 \ 89662.DOC -43-1242647 468 as a dielectric is applied to the trench 467. The top surface of the epoxide is planarized by a polishing process, and then the surface is planarized as shown in Fig. 15b (p-1). Next, as shown in FIG. 15c (q-1), 460 and the third photoresist pattern 466, and the rest of the sacrificial substrate 450, the conductor formed here may have an equal length portion. The second photoresist pattern is removed by a wet etching process and removed by a wet etching process using KOH to complete the single-layer probe according to the present invention. Projecting from the center of the ceramic plate 464 to both sides will now describe a method for manufacturing a double-layered probe according to the present invention. Next, as shown in Fig. 15c (0-2), after completing the process of Fig. 能, after adding epoxide 470, which is used as a dielectric and an adhesive, to a rod groove operation, Before curing the 470, attach the pottery plate. Although the attached ceramic plate is similar to a rectangular parallelepiped in appearance to the trench 467, 1 can also be a parallelogram ceramic plate 81, in which the ends 8 and 1 are tilted as shown in Figure 2U. It is a step-shaped ceramic plate 82, and its two ends 821 and 822 are step I1 white = as shown in Figure 21b. As a result, in the manufactured probe, the conductor protrudes outward P is the same length ii: During the k-pin operation, the repeated force applied to all probe pins is the same. Next, as shown in Fig. 15c (p-2), the planar surface of the ceramic plate?] Is flattened by a grinding process. The planarization process here may be the same as that in the first embodiment. Then, as shown in FIG. 15d (q-2), the plane b under the sacrificial substrate 45 is flattened. # A second layer 474 for the conductor formation process is formed on the entire lower plane B of the sacrificial substrate 45G. Knotting-The two layers 474 here are composed of 4 layers with a thickness of 500 angstroms and a copper layer with a thickness of 5'GGG angstrom. The copper layer is essentially used for the subsequent power mining process

O: \ 89 \ 89662.DOC -44- 1242647. The titanium layer is used to improve the adhesion between the sacrificial substrate 45 and the copper layer. Next, as shown in FIG. 15d (q-2), when the second layer 474 is formed, a fourth photoresist pattern 476 is formed by a lithography process to open a predetermined conductor on the plane B below the sacrificial substrate 450. Next, as shown in Fig. 15d (r-2), a conductive material such as nickel hafnium or a nickel alloy (Ni-C., Ni_w_c.) Is deposited by an electro-electrolytic method to form a second conductor 478. Fig. 15d (s-2) shows that the upper plane of the second conductor is flattened by removing the uneven hook portion of the upper plane of the second conductor. The first specific embodiment of the flattening process disk implemented here uses the same method. However, in the process of forming the second conductor W and the electric ore manufacturing process, only in the case where a conductor is formed in the opening portion of the fourth photoresist pattern M, the planarization process can be omitted. In addition, in the case where the second conductor 478 is formed using a method other than the electroplating process such as physical vapor deposition (D) and chemical vapor deposition (CVD), m requires the aforementioned layers, so the process of forming the second layer 474 is Can be omitted. Then, a gold plating process is performed on the upper portion of the second conductor 478 to form a second gold plating layer 480. The purpose of this process is to improve the conductivity of the probe. Then, as shown in FIG. 15d (t-2), the fourth photoresist pattern 467 is removed by a wet money engraving process. At the same time, the second layer, which protrudes outward from the conductor, is also removed. Then, a fifth photoresist pattern 482 is formed by using a photolithography process to open a predetermined supporting component in the second conductor 478. Next, as shown in Fig. 15d (u-2), the technique # 备 日 & 四) does not apply a thermoplastic epoxide 484 to a portion of the second conductor 478 opened by the fifth photoresist pattern 482. Then, as shown in Figure 15e (v-2), the applied epoxidation is performed by a grinding process.

O: \ 89 \ 89662.DOC -45-1242647 The plane on object 484 is flattened. The planarization process here is the same as that of the first embodiment. Then, as shown in FIG. 15e (w-2), the fifth and second photoresist patterns 482 and 460 are removed by a wet etching process. Finally, as shown in FIG. 15e (x-2), the remaining portion of the dream sacrificial substrate 450 is removed by a wet etching process using KOH. The appearance of the probe manufactured according to the aforementioned method is shown in FIG. 16. FIG. 16 illustrates a probe structure fabricated using a single sacrificial substrate using the process shown in FIG. 15. The probe manufactured according to the process in FIG. 15 includes a dielectric 370 in the center, as shown in FIG. 6. By attaching an epoxide channel to Tao Jingbanqiu, a dielectric substance 370 is formed. In other words, a cost-cutting process forms a trench on the predetermined portion of the sacrificial substrate, applies epoxide 37〇a in the trench, and inserts and attaches the ceramic plate 3 · before the epoxy solidifies, thereby forming Dielectrics 70. Here, epoxide 370a is used as an adhesive. In addition, the conductors 372a and 372b are arranged in parallel on the upper and lower planes of the dielectric 570 at predetermined intervals. The lithography process is used to form a first protective film pattern on the sacrificial substrate, and then a conductive material is deposited on the area opened with the 5th pattern to form a conductor and a welcome. Here, when a conductive material is formed by an electrolytic plating method, a seed layer is formed in advance on a plane above and below the sacrificial substrate. In addition, the conductive layers 374a and 374b 'made of a material having a higher electrical conductivity than the conductors 3 72a and 3 72b are located on one of the surfaces of the conductors to improve the conductivity of the conductors. The conductive material here is preferably gold (Au).

O: \ 89 \ 89662.DOC -46- 1242647 Finally, supporting components 376a and 376b are formed on the upper and lower planes of the dielectric, and the conductors 372a and 372b are protected and fixed. The support members 376a and 37 讣 are preferably made of epoxide or ceramics attached and fixed with epoxide. The support plate is denoted by the code 3 7 8. (Specific embodiment 2-7) As shown in FIG. 17a (a), the two surfaces of the broken wafer are polished to prepare a sacrificial substrate 550. The sacrificial substrate 55 manufactured by a grinding process or a polishing process is 400 to 500 microns thick. Then, as shown in FIG. 17a (b), the first photoresist pattern 552 'is formed by the lithography process, and the predetermined dielectric portion of the sacrificial substrate 550 is turned on. Then, as shown in Fig. 17a (c), the first photoresist pattern 552 is used to etch the plane a above the sacrificial substrate 550 to a predetermined depth to form a trench 551. The etching depth here ranges from 240 to 250 microns, which is slightly deeper than the thickness of the dielectric to be formed, which is 240 microns. Next, as shown in Fig. 17a (d), after an epoxide 554 serving as a dielectric and an adhesive is applied to the trench 551, and the epoxide 551 is cured, a ceramic plate 556 is attached. Although the shape of the attached ceramic plate is rectangular parallelepiped similar to the trench 551, the ceramic plate 820 can also be a parallelogram inclined at both ends 8 ι and 812 as shown in Figure 2U, or a ceramic slab 82 ° may be a step shape whose ends 82 丨 and 822 are step-like. As a result, in the manufactured probe, the length of the outwardly protruding portion of the conductor is the same, so that the pressure applied to all the probe pins during the probe operation is equal. Then, as shown in Fig. 17a (e), the upper surface of the ceramic plate 6 is flattened by a grinding process. The planarization process here is the same as the first embodiment. in

O: \ 89 \ 89662.DOC -47- 1242647 When flattening the upper surface of the ceramic plate 556, the entire upper plane a of the sacrificial substrate 550 is formed by using the sacrificial process to form the first sound 558 for the conductor to form the electric mining process. The first layer 558 here is composed of a titanium layer with a thickness of 5000 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is essentially used as a seed layer in the subsequent electric mining process. The Qin layer is used to improve the adhesion between the sacrificial substrate 550 and the copper layer. Next, as shown in FIG. 17a (f), a second photoresist pattern 560 'is formed by a lithography process to open a predetermined conductor on a plane a above the sacrificial substrate 55. Next, as shown in FIG. 17A, a conductive material such as nickel hafnium or an alloy (Nl_Co, Ni_w_co) is deposited by an electrolytic plating method to form a first conductor element. Next, as shown in Fig. 17a (a), the upper plane of the first conductor 562 is flattened by removing uneven portions or excessively formed portions of the plane above the first conductor 562. The planarization process here is the same as the method disclosed in the first embodiment. However, in the process of forming the ideal electric clock of the -conductor 562, the planarization process can be omitted only in the case where the conductor is formed by using the opening of the second photoresist pattern 560. In addition, in the case where the first conductor is formed by a method other than the power ore process such as physical vapor deposition (pvD) and chemical vapor deposition (CVD), the process of forming the first layer 5 58 can be omitted. Then, as shown in FIG. 17b (i), a gold plating process is performed on the upper part of the dipole conductor 562 to form a first gold plating layer 564. The purpose of this process is to improve the conductivity of the probe. Then, as shown in FIG. 17T), a first protective film 566 is formed to protect the first conductor 562 and the first gold plating layer formed on the plane A above the sacrificial soil plate 550.

O: \ 89 \ 89662.DOC -48, 1242647 5 64. Here is a protective film with tape or photoresist. As a result, the process on the plane A above the sacrificial substrate 550 has been completed, and then the process on the plane B below it has begun. First, as shown in Fig. 17b (k), the sacrificial substrate 550 faces downward, and the lower plane B of the sacrificial substrate 550 is polished by grinding or polishing. The sacrificial substrate 550 is polished to a thickness where the ceramic plate 556 is exposed. Next, as shown in Fig. 17b (l), a second layer 568 is formed on the entire lower plane b of the sacrificial substrate 550 for the conductor forming plating process. Then, a third photoresist pattern 570 is formed by a photolithography process to open a conductor portion on the plane 6 below the sacrificial substrate 55. Then, as shown in FIG. 17b (m), a second conductor 572 is formed on the place where the third photoresist pattern 57 is turned on. Next, as shown in FIG. 17b (n), if the plane above the second conductor 572 is not uniform, a planarization process is performed on the upper plane. The planarization process here is the same as the method disclosed in the first implementation. However, in the course of an ideal plating process for forming the second conductor 572, only in the case where the second conductor M is formed in the opening portion of the second photoresist pattern 570, the planarization process may be omitted. In addition, in the case of using methods other than the process of power ore such as physical vapor deposition (PVC and CVD) to form the first: conductor, the process of forming the second layer 568 can be omitted. As shown in Fig. 17b (o), the “Meng Cheng” process is performed on the plane above the first waterfall body 572 to form the second shoulder of the entire mine, and then to the layer 574. The purpose of this process is to improve the needle conduction Wet erosion

Clothing private will flat S on the sacrificial substrate 550

O: \ 89 \ 89662.DOC -49- 1242647 A. Cases 560 and 570. -The protective film is removed, and the second and third photoresist patterns are removed at the same time. The exposed part of the second layer 568 is also removed here. Then, as shown in FIG. 17c (a), a second protective film 576 is formed on the plane A above the sacrificial substrate 55 to protect the upper plane a. Then, a fourth photoresist pattern 578 is formed by a photolithography process, so as to turn on the second conductor 572 where a support cylinder is to be formed. Then, as shown in Fig. 17c (q), a thermoplastic epoxide 58 is applied to the place where the fourth photoresist pattern 578 is turned on. Then, as shown in FIG. 17c (r), the upper surface of the epoxide is planarized by a polishing process. The planarization process is the same as the first embodiment. Then, as shown in Fig. 17c (s), the second protective film 576 on the plane a above the sacrificial substrate 55 is removed. A fifth photoresist pattern 582 is then formed to turn on the first conductor 562 at a predetermined formation supporting member. Next, as shown in FIG. 17c (a), a thermoplastic epoxide 584 is applied at the opening where the fifth photoresist pattern 582 is opened, and then a plane above the epoxide π # is planarized by a grinding process. Finally, as shown in FIG. 17c (u), the fourth and fifth photoresist patterns 578 and 582 are simultaneously removed by a wet etching process, and the first and second conductors 562 and 572 are selectively removed by a wet etching process using KON. The remaining portion of the sacrificial substrate 55 is left in between. After the sacrificial substrate 550 is removed, the probe of the present invention is completed. (Specific embodiments 2 to 8) As shown in FIG. 18a, a silicon wafer with two planes polished is prepared as a sacrificial wafer 650 '. The sacrificial substrate 65 prepared by a grinding process or a polishing process is 65 mm thick and 240 μm: \ 89 \ 89662.DOC -50- 1242647 Then, as shown in Fig. 18a (b), attach a tape to the plane 3 below the sacrificial substrate 65 to avoid contamination, or apply a coating material 652 such as a photoresist on it on. Next, as shown in FIG. 18a (C), the center portion of the sacrificial substrate 650 is cut along the cutting portion 653 with a predetermined shape by a tangent process. Then, as shown in FIG. 18a (d), a sacrificial substrate block 654 having a predetermined size, that is, a central silicon block, is removed from the sacrificial substrate 65 by a tangent process. As a result, a trench 655 is formed in the central portion of the sacrificial substrate 650. Next, as shown in Fig. 18a (e), a ceramic plate 656 serving as a dielectric is inserted into the trench 655, and then an epoxide 658 is applied and embedded in the gap between the ceramic plate 656 and the sacrificial substrate 650. The epoxide here has a function of attaching the ceramic plate 565 and the sacrificial substrate 650. Next, as shown in FIG. 18a (f), the plane a above the sacrificial substrate 65o is flattened. Next, as shown in FIG. 18a (g), the coating material 652 formed on the plane B below the sacrificial substrate 650 is removed, and similar to the plane a above the sacrificial substrate 650, the lower plane B is planarized. Next, as shown in FIG. 18a (h), the first layers 660 and 662 for the conductor clock process are formed on the entire lower plane b of the sacrificial substrate 650. The first layers 660 and 662 here consist of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 soil layers. The copper layer is used as a seed layer for electroplating in the subsequent electroplating process. The titanium layer is used to improve the adhesion between the sacrificial substrate 650 and the copper layer. 18a (i), a first protective film 667 for protecting the seed layer 662 is formed on the plane B below the sacrificial substrate 650, and a photolithography process is used to form a first protective film 667 on the plane a above the sacrificial substrate 650. A photoresist pattern 664 is used to open a predetermined conductor formation portion of the sacrificial substrate 650.

O: \ 89 \ 89662.DOC -51-1242647 Then, as shown in Fig. 18a, a first conductor 666 is formed on the opening using the first photoresist pattern. Here, the first conductor 666 is formed by depositing a conductive material such as nickel (Ni) or a nickel alloy (Ni_c0, Ni_w_c〇) by electrolytic plating, followed by removing the first conductor as shown in FIG. 18b (k). The unevenness of the plane above 666 flattens the plane above the first conductor 666. The planarization process here is the same as the method disclosed in the first embodiment. However, in the process of forming an ideal plating process for forming the first conductor 666, only in the case where the first conductor 666 is formed in the opening portion of the first photoresist pattern 664, the planarization process may be omitted. Then, a gold plating process is performed on the entire upper portion of the first conductor 666, thereby forming a first gold plating layer 668. In addition, in the case where the first conductor 666 is formed by using methods other than the power ore process such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), since there is no seed layer, the first layer 660 was previously formed. The process can be omitted. Next, as shown in FIG. 18b (l), a second protective film 670 is formed on the plane A above the sacrificial substrate 650 by using an adhesive tape or a photoresist at the place where the first conductor 666 is formed. After the formation of the second protective film 67o is completed, the process of the brother on the plane A on the sacrificial substrate 650 is completed. Then, the sacrificial substrate is directed downward, and then the protective film 667 for protecting the lower surface of the sacrificial substrate 650 is removed. The process on the plane B below the sacrificial substrate 650 will now be described. Next, as shown in FIG. 18b (m), a second photoresist pattern 672 'is formed by a lithography process to open a predetermined conductor position on the plane B below the sacrificial substrate 650. Next, as shown in FIG. 18b (n), a second conductor 674 is formed on O: \ 89 \ 89662.DOC -52-1242647 on the opening of the second photoresist pattern 672. Here, a third conductor is formed by depositing a conductive material such as nickel (Ni) or an alloy (Ni_co, Ni_w_co) by an electroplating process. Next, as shown in FIG. 18b (0), the upper plane of the second conductor 674 is removed by flattening it. The planarization process here is the same as the method disclosed in the first embodiment. After the planarization process is completed, a gold plating process is performed on the entire upper portion of the second conductor 674 to form a second gold plating: In the process of forming an ideal circuit for the ^ th conductor 674, only the second photoresist is used. When a conductor is formed in the opening of the pattern 672, the planarization process can be omitted. In addition, in the case of using a method other than a power ore process such as physical vapor deposition (D) and chemical vapor deposition (CVD) to form the second conductor, the previous process of forming the seed layer 662 can be omitted. Next, as shown in FIG. 18b (P) ', the second photoresist pattern 672 is removed by a wet etching process. The exposed part of the second layer 662 is also removed here. In addition, the first photoresist pattern 664 protected by the second protective film 670 can be removed at the same time. Then, as shown in FIG. 18b (a), a third photoresist pattern 678 'is formed by using a lithography process to open a predetermined supporting component in the second conductor 674. Next, as shown in FIG. 18C ', using the third photoresist pattern 678 as a mold, an epoxide 680 is applied to the opening of the second conductor 674. Next, as shown in FIG. 18c (s), a plane above the epoxide 680 is planarized by a polishing process. 'Next, as shown in FIG. 18C', the first-protection film 670 formed on the plane a above the sacrificial substrate 650 is removed. Then the wet process removes the "photoresist

O: \ 89 \ 89662.DOC -53-1242647 Case 664, and—and remove the exposed part of the seed layer 660. Then, a fourth photoresist pattern 681 is formed using a photolithography process as shown in FIG. ，, so as to open a predetermined supporting component in the first conductor 666. Then, an epoxide 684 is applied to the opening of the conductor using the photoresist pattern 682. Then, a planarization process is performed on the top surface of the epoxide 684 by a polishing process. Then, as shown in FIG. 18C (V), the third and fourth photoresist patterns 678 and 682 ′ are simultaneously removed by a wet last process, and the residue of the sacrificial substrate 650 is removed by a wet money process using κ〇Η. section. Then, as shown in Fig. I8c (w), after the epoxide 658 is removed, the probe of the present invention is completed. (Specific Example 2-9) As shown in Fig. 19a (a), a ceramic plate having both surfaces polished is prepared as a sacrificial substrate 750. The sacrificial substrate π after being polished or polished is called 500 micrometers. Next, as shown in FIG. 19a, two trenches 752 are formed on a predetermined portion on the plane A above the sacrificial substrate 75 by a tangent process. Next, as shown in FIG. 19a (c), a trench 752 is formed on the sacrificial substrate 75 on the plane a to form a first layer 754 for the copper plating structure to form a plating process, and a trench is formed, in which copper plating is used. The structure is used as a trench-buried material 'The first layer 754 here is composed of a titanium layer and a copper layer. Next, as shown in FIG. 19a (d), a first photoresist pattern 756 is formed using a lithography process to open two predetermined trenches on a flat surface above the sacrificial substrate 750. Then, as shown in FIG. 19a (e) A copper-plated structure is formed on the trench opened for the first photoresist pattern 756 as a trench buried material by an electroplating process. O: \ 89 \ 89662.DOC -54- 1242647 758 ° Then as shown in Figure 19a (f) As shown, the first photoresist pattern 756 and a portion of the copper-plated structure 758 protruding upward from the sacrificial substrate 750 are removed, thereby planarizing the plane A above the sacrificial substrate. The planarization process is performed until the surface A of the plane A and the copper-plated structure 758 above the sacrificial substrate 75 are adjacent to each other. Next, as shown in Fig. 19a (g), a second layer 76o is formed on the plane a above the sacrificial substrate 75o for the conductor forming process. The second layer 760 here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5 angstroms. The copper layer is used as a seed for electric ore during the subsequent electroplating process, and the titanium layer is used to improve the adhesion between the sacrificial substrate 750 and the copper layer. Next, as shown in FIG. 19b (a), a second photoresist pattern 762 is formed by a lithography process to open a predetermined conductor formed on the sacrificial substrate 75o. As shown in Fig. 19b, a -conductor 764 is formed on the place where the second photoresist pattern is opened. Here, the first conductor ⑽ is formed by depositing a conductive material such as nickel (N0 or alloy (Ni_Co, N1)) by an electrolytic plating method. Then, as shown in FIG. 19b (j), the first conductor 764 is removed 764 The planarization process of the upper plane here is the same as the method disclosed in the first embodiment for planarizing the upper plane of the unevenness. However, in the process of forming the ideal key bond process of the -conductor 764, only The drawing process of the case where a conductor is formed in the opening of the second photoresist pattern 762 can be omitted. In addition, in addition to the use of the plating process

In the case of methods other than clothing, such as physical vapor deposition (PVE and chemical vapor deposition (CVD) to form Di Shi, # —) to form the cold body 764, the previous process of a layer 760 can be omitted. Of it.

O: \ 89 \ 89662.DOC -55- 1242647 Then, as shown in FIG. 19b (k), a gold plating process is performed on the entire upper portion of the first conductor 764 to form a first gold plating layer 766. Next, as shown in FIG. 19b (l), a protective film 768 for protecting the first conductor 764 is formed on the plane a above the sacrificial substrate 750, and a first gold-plated layer 766 is formed. Process on the plane a above the substrate 75. The process on the plane b below the sacrificial substrate 750 will now be described. First, as shown in FIG. 19b (m), the sacrificial substrate 75 is mold-molded in a polishing process until the plane b below the sacrificial substrate 750 and the plane below the copper-plated structure 758 are exposed. Next, as shown in Fig. 19b (n), a third layer 770 for forming a conductor for electroplating is formed on the entire lower plane of the sacrificial substrate 75o. The third layer 770 here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is essentially used as a seed layer for electroplating in the subsequent plating process, and the titanium layer is used to improve the adhesion between the sacrificial substrate 750 and the copper layer. Next, a second photoresist pattern 772 is formed by a lithography process to open a predetermined conductor formed on the plane above the sacrificial substrate 75 °. As shown in FIG. 19c (0), a second conductor 774 is formed on the place where the third photoresist pattern 772 is opened. Here, the third conductor 774 is formed by depositing a conductive material such as nickel (Ni) or a nickel alloy (Ni_co, Ni_w_co) by an electrolytic plating method. As shown in FIG. 19c (p), the upper plane is flattened by removing unevenness on the plane above the third conductor 774. The planarization process here is the same as the method disclosed in the first embodiment. After the planarization process is completed, a gold plating process is performed on the entire upper portion of the third conductor 774 to form a second gold plating process.

O: \ 89 \ 89662.DOC -56- 1242647 Layer 776 However, in the process of forming the third conductor 774, the price is only 100%, and the process of forming the conductor only involves the formation of a conductor in the opening of the first-resistance pattern 772. The process can be omitted. (1) In addition to the use of methods other than the plating process ... physical & phase deposition (PVD) 舁 In the case of phase deposition (CVD) to form the third conductor 774, the previous process of forming the second layer 770 is Can be omitted. Then, as shown in FIG. 9e, the film deviation is removed, and the second and third photoresist patterns 762 and 772 are removed. Here, the second layer 760 and the third layer 770 are also removed. Then, as shown in FIG. 19d (b), the photolithography process is used to form the fourth and fifth photoresist patterns 778 and 780, so as to open the first and second conductors 764 and 774 to form predetermined support components. / Next, as shown in FIG. 19d (s), a thermoplastic epoxide 7 $ 2 is applied to the first conductor 7 7 4 at the portion opened with the fourth photoresist pattern 778. Next, as shown in FIG. 19d (t), a plane above the epoxide 782 is planarized by a polishing process. Next, as shown in FIG. 19d (u), an epoxide layer 784 is formed on the plane above the sacrificial substrate 75 by the same process. Next, as shown in FIG. 19d (v), a plane above the epoxide 784 is planarized by a grinding process. Next, as shown in FIG. 19d (w), the fourth and fifth photoresist patterns 778 and 78o remaining on the upper and lower planes of the sacrificial substrate 750 are simultaneously removed by a wet etching process. Finally, the sacrificial substrate O: \ 89 \ 89662.DOC -57-1242647 is removed by applying an external force on the residual sacrificial substrate 7 50, and the trench buried material 758 is removed by a selective etching process, This completes the probe of the present invention. For σ ', Fig. 20 illustrates the structure of a probe manufactured according to the methods shown in Figs. Fig. 20 is a cross-sectional view illustrating a probe formed by using the probe according to an embodiment of the present invention. As shown in FIG. 20, the dielectric 38 is located at the center of the probe, and the conductors 382a and 382b are located at a predetermined interval above and below the dielectric. In addition, the branch towers 384a and 384b are respectively attached to the conductors 382a and 382b on the upper and lower planes of the dielectric 38o. In addition, the thin layers 386a and 386b made of a material having a conductivity higher than that of the conductors 382 & 3 are located on the outer planes of the conductors 382a and 382b, respectively. The formation of the trench is performed on a predetermined portion of the sacrificial substrate, and a dielectric material is embedded in the trench to form a dielectric 38. The dielectric material is preferably ceramic. The profile at both ends of the dielectric can have a stepped profile or an inclined profile. A lithography process is used to form a first protective film on the two planes of the dielectric 380, and then a conductive material is deposited on the area opened by the first protective film to form the conductors 382a and 382b. In addition, a lithography process is used to form the second protective film on the conductors 382a and 382b on the two planes of the sacrificial substrate, and then the supporting material is embedded in the area opened by the second protective film to form the anchor components 384a and 384b. In addition, the probe structure using a single sacrificial substrate manufactured according to the specific embodiment 2-6 is the same as that shown in FIG. Therefore, the detailed description of the probe structure is omitted. Fig. 2a is a perspective view and a cross-section illustrating a ceramic plate used in the present invention

O: \ 89 \ 89662.DOC -58- 1242647 Figures, where the cross section is a parallelogram; Figure 21b illustrates a perspective view and a scraped view of a ceramic plate used in the present invention. These shapes are suitable for all specific embodiments according to the invention. (First specific embodiment of the probe set) π FIG. 22a is a perspective view illustrating a first probe set having a pin for testing a flat panel display according to the present invention; FIG. Is a sectional view thereof. The special structure of the aforementioned probe sheet and its manufacturing method will not be described here. Modal reading 1122a and 22b 'In the probe set according to the first embodiment of the present invention, there are a plurality of unit structures attached and fixed to a light-transmitting mold 9102, which is fixed to The lower part of the probe block 904. Here, each unit = 冓 includes a light beam member having a detection tip 902 and a connection tip (not shown), and the probe and the probe block 904 are attached to each other with a double-sided tape or an adhesive and fixed. The probe block 904 is made of a light-transmissive material such as acrylic acid to ensure its light-transmitting property. In addition, the first interface panel 908 is located above the probe block 904, and is fixed to each other by the π-tooth combination of 4 Tianmen 904. The second interface panel 91 and the probe holder are sequentially located above the first interface panel 908, and are fixed to each other by the engagement of the anchor 914. The first and second interface plates 908 and 910 are engaged with the fixing bolt 907 to further increase the meshing force therebetween. The second interface panel 91 and the probe holder 912 are also engaged by the fixing bolt 911, which further increases the combined force therebetween. The connecting tip (not at the end of one of the beam members of the probe sheet)

O: \ 89 \ 89662.DOC -59- 1242647 (illustrated) is connected to the pattern on the tape and reel package (Tcp) 932 via the guide film 930. More specifically, the structure is configured by arranging a probe (forming the connection tip) on the lower part of the first interface panel 980, and then by using the fixing component 922 and the anchor 9 2 4 to spray the needle and the first interface Panel. More specifically, the upper closed adhesive component 926 and the lower closed adhesive component 928 made of an insulating ceramic material are inserted between the probe and the first interface panel 908 and between the TCP 932 and the fixed component 922, respectively. In addition, the connecting tip of the probe is difficult to be connected to the TCP 932 through the guide film 93 between the upper and lower closed adhesive components 926 and 928. In addition, the compression anchor bolt 929 is further located below the fixing component 922, so that the connection tip of the probe 902] 3 and 1 ^? 932 can be more strongly connected by the guide compression 932 under the rotation compression of the anchor flash 929. together. Furthermore, the probe holder 912 and the manipulator 916 are engaged with each other by the anchor flash 920. During the test process, the probe holder 912 connected to the manipulator 916 can be moved up and down by a physical force F. More specifically, one side of the probe holder 912 and one side of the manipulator 916 mesh with the guide holder 918 so that the first interface panel 908 and the second interface connected to the probe holder 912 are engaged. Plate 91 and probe block 904 were tested. The expression ‘Private period’ is the vertical physical force F to move up and down. In particular, the spring 921 with a predetermined elasticity is located around the fixed component 92o that connects the probe holding clamp 912 and the manipulator 916, so that during the test process, is the upper and lower physical force? The first interface panel 908 moving up and down, the second interface panel 91 and the probe block 904 connected to the probe port holder 912, and

O: \ 89 \ 89662.DOC -60- J242647 The spring force of the spring 921 returns to its initial position. In another embodiment, as shown in FIG. 23, the aforementioned M component located on the lower part of the first solution panel can be omitted. In addition, the probe beam member without the connection tip and TCP 932 is located on the anisotropic conductive film (ACF) 935 'and is connected to each other by a compression process and a heating process.

Therefore, the flat panel display obtained by a series of processes for manufacturing the flat panel display is fixed on the detection instrument, and the mobile probe block 904 and the predetermined physical force are applied to the electrode pad of the flat panel display. . Perform an electrical test process on a flat panel display. _ At this time, the detection tip 902 located at the lower part of the probe block 904 is in contact with the electrode pad of the flat panel display. The electrical signal input to the detection instrument is applied to the electrode 塾 of the flat panel display via TCP 932, the probe beam member and the detection tip 902. '(Second specific embodiment of the probe set) FIG. 24a is a perspective view of a second probe set with a mask for testing a flat panel display according to the present invention; FIG. 24b is a cross-sectional view of the probe structure And its manufacturing method. Referring to Figs. 24a and 24b, in the second set of needles according to the second embodiment of the present invention, the first set of probes is replaced with a highly elastic metal plate 936 made of metal such as stainless steel, which is the first set The light-transmissive material is coated with bismuth needle blocks at the lower part of the interface board 90 °. The metal plate 936 is fixed to the first interface panel through the anchor 903, and the probe is fixed to the lower portion of the metal plate 936 with an adhesive through a high elastic rubber 938. By applying a predetermined physical force F to the electrode pad of the flat panel display

DOC 0: \ 's \ 89662 -61-1242647 During the electrical test process, the ^ ΟΠδ-ττ ^ ^ ^ needle group has an elastic metal surface located at the bottom of the first interface plate 08 (the first of the probe group Three-body embodiment) 〃_938 'can increase flexibility. FIG. 25 is a perspective view illustrating a probe set having a probe according to the present invention, FIG. 25 and FIG. 25 and FIG. 25 are a diagram showing a probe set according to a third embodiment of the present invention; In a stacked structure. As mentioned above, the multi-layer probe includes the conductor of the upper probe, which does not overlap each other, but the conductor of the lower probe and the conductor of the lower probe 950. One end of each of the conductors of the wooden needle is more outward than the conductors. Moreover, the upper and lower parts of the body are exposed long, and have similar electrical and physical properties and conductivity. The probes in the stacked structure are fixed to each other on the inclined plane of the probe block 955 by using attachment-fixing tools such as anchors. The probe block 955 may be made of a light-transmissive material such as acrylic to ensure its light-transmitting property. In addition, the first interface panel 965 is located above the probe block 955. The probe holding 1 § 970 is located above the first interface panel 965 and is fixed together by the engagement of the anchor 967. The first interface plate 965 and the probe holder 970 are engaged by the fixing bolt 967 to further increase the spraying force therebetween. In addition, the second interface panel 975 is also fixed to the back side of the probe block 955 on the plane below the first interface panel 965 by the engagement of the fixing bolt 967. The TCP 972 is attached and fixed on a plane below the second interface panel 975. For the connection of TCP 972 and the conductors 950 and 960 of the multilayer probe attached and fixed on the inclined plane of the probe block 955, each conductor of the multilayer probe O: \ 89 \ 89662.DOC -62- 1242647 One end of 950 and 960 is guided by a hole (unlabeled) formed in the guide film 974, and is connected to a corresponding pattern on TCP 972. In addition, the probe holder 970 and the manipulator 980 are engaged with each other by the anchor 982. During the test process, the probe holder 970 connected to the manipulator 980 can be moved up and down by the up and down physical force F. More specifically, one side of the probe holder 970 and one side of the manipulator 980 are engaged with each other as a guide 984, so that the first interface panel 965 and the probe block 955 connected to the probe holder 970 can be During the test process, it moves up and down for the physical force F. In particular, the spring 986 with a predetermined elasticity is located around the fixed component 982 connecting the probe holder 970 and the manipulator 980, so that during the test process, the upper and lower physical forces F move up and down to the probe holder 970. An interface panel 965 and a probe block 955 can be restored to their initial positions by the spring force of the spring 986. Therefore, the flat panel display obtained by a series of processes for manufacturing the flat panel display is fixed to a detection instrument, and the mobile probe block 955 and a predetermined physical force are applied to the electrode pads of the flat panel display. . Perform an electrical test process on a flat panel display. At this time, the needle portions 950 and 960 of the multilayer probe located under the probe block 955 are in contact with the electrode pads of the flat panel display. The electrical signals input to the detection instrument are applied to the electrode pads of the flat panel display via TCP 972, the probe beam member and the needle portions 950 and 960 of the probe. Industrial Applicability According to the present invention, it is easy to use the tangent zigzag process and the O: \ 89 \ 89662.DOC -63- 1242647 process for attaching a needle conductor. The process is made of a hard material and can be reduced in manufacturing probes. & Probes have the additional advantage that, according to the present invention, productivity can be increased accordingly. Manufacturing process, and can use the optical alignment center == the number of conductors and the probe caused by the difference in manual operation == thermal expansion 对 the advantages of precision alignment probe. -It can be compared with the same sacrifice: the manufacturing process in L # is different. According to the present invention, a single method can be used.-The accuracy is improved to improve the yield, = in :: due to the reduction of the system t, and the process can be improved. Yield and productivity. Although the present invention and its advantages have been described in detail in order to reduce the production price of needles, it should be understood that the present invention is not limited to the foregoing embodiments and accompanying drawings. The spirit and model of the present invention can be changed, replaced and replaced. [Brief description of the drawings] The above and other objects, advantages, and features of the present invention will be understood from the description and accompanying drawings of the following preferred embodiments. Among them, FIG. 1a illustrates a specific embodiment according to the present invention. A perspective view of a probe for testing the appearance of a flat plate and a manufacturing method thereof; FIG. “Is a longitudinal sectional view of FIG. ^; FIG. Lc is a transverse sectional view of FIG. Ia; FIGS. 2a and 2b are explanatory views according to FIG. 1 & A perspective view of the manufacturing process of another specific embodiment of a probe for testing a flat panel display manufactured by IC; a picture hole is a longitudinal sectional view of the figure; FIG. 2c is a transverse sectional view of FIG. 2a; and FIGS. 3a to 3e are A perspective view illustrating the manufacturing process of another specific embodiment of the flat-panel display O: \ 89 \ 89662.DOC -64- 1242647 manufactured in accordance with FIGS. 2a to 2c; FIG. 4a and A perspective view of a double-layered probe for testing a flat panel display manufactured by the invented MEMS process; FIG. 5a is a perspective view illustrating a single-layered probe for testing a flat panel display device manufactured according to the MEMS process of the present invention; Fig. 5b is a longitudinal sectional view of Fig. 5a; Figs. 6a to 6p are explanations according to another Sectional views of a method for manufacturing a probe for testing a flat panel display according to a specific embodiment; Figures 7a to 7: ι are sectional views illustrating a method for manufacturing a probe for testing a flat panel display according to another embodiment; 8a to 8t are cross-sectional views illustrating a method for manufacturing a probe for testing a flat panel display according to another embodiment; FIG. 9 illustrates a probe for testing a flat panel display according to another specific embodiment; A perspective view of the method; FIG. 10a is an enlarged perspective view illustrating a probe according to another embodiment. FIG. 10b is a cross-sectional view thereof. FIG. 11 is a view illustrating a flat panel display according to another embodiment. A perspective view of a crying probe; Figures 1-2a to 12: 1 are cross-sectional views illustrating a method for manufacturing a probe for testing a flat panel display; Figures 13a to 13d are illustrating another method. Example A cross-sectional view of each process of a method for manufacturing a probe for testing a flat panel display; Figure Η is a perspective view of a probe manufactured according to the method shown in Figures Ua to 13d; A specific embodiment is manufactured to test flat Plates were cross-sectional views of a method of routing a probe of the device is not;

0; \ 89 \ 89662.D〇C -65- I242647 Figure 16 is a perspective view of a probe manufactured according to the method shown in Figures 15a to 15e; Figures 17a to 17 < Cross-sectional views of the various processes of the method for testing the flat-panel display probe; FIGS. 18a to 18e are cross-sectional views of the various processes of the method of manufacturing a probe for testing the flat-panel display by a specific embodiment; FIG. 19a 19 to 19d are cross-sectional views illustrating each process of a method for manufacturing a probe for testing a flat panel display according to another embodiment. FIG. 20 is a perspective view of a probe manufactured according to the method shown in FIG. 2la is a perspective view and a cross-sectional view of a ceramic plate used in the present invention, where the cross-section is a parallelogram; FIG. 21b is a perspective and a cross-sectional view of a ceramic plate used in the present invention, where the cross-section is a step shape. 22a is a perspective view illustrating a first probe set having a probe for testing a flat panel display according to the present invention; FIG. 22b is a cross-sectional view thereof; and FIG. 23 is a view illustrating a tape-and-reel type shown in FIGS. 22 and 24. The connection diagram between the package (Tcp) and the unit conductor assembly; 'Figure 24a A perspective view illustrating a second probe set having a probe for testing a flat panel display according to the present invention; FIG. 24b is a sectional view thereof; FIG. 25 is a perspective view illustrating a probe set having a probe according to the present invention And FIG. 26 is a cross-sectional view illustrating a probe set having a probe according to the present invention. [Description of Representative Symbols of the Drawings] 10, 80 11 Type Plate-shaped Dielectric Lines 20a, 20b '50' 284, 286 , 302 '312' 360a, conductor 360b, 372a, 372b, 412a, 412b, 950, 960

O: \ 89 \ 89662.DOC -66-1242647 30a, 30b, 282, 364, 376a, 376b 40 40a, 40b 60 70 90, 100, 218, 308, 318 9 Bu 101, 110 93, 103, 112 95, 105, 114 97a, 97b, 107a, 144, 467, 551, 655, 752 98 108, 118 109, 304, 314, 370a, 370b, 420, 428, 462, 470, 484, 554, 580, 658, 684, 782, 784 116a, 256a, 256b, 334a, 416 120, 200, 250, 330, 400, 450, 550, 650, 750 122, 202, 261 124, 204, 262 126, 206, 260, 336, 408a, 408b 128, 208, 252 129, 210, 254, 332, 402a, 402b, 454, support component conductive material, thin conductive material, plate-like branch support component, mineral gold layer support plate, first protruding area, central groove, second protruding area, trench Lower conductor upper conductor epoxide first trench sacrificial substrate copper layer seed layer first photoresist first photoresist pattern O: \ 89 \ 89662.DOC • 67-1242647 552, 664, 756 130, 272, 306 , 316 131, 212, 266 132a, 132b, 288 134, 264 136, 210, 265, 338, 410a, 410b, 460, 560 762 138, 148, 282, 378 140, 214 142, 222, 270, 414, 560, 570, 678, 762, 772, 146, 280, 258, 334b, 426, 274 276, 424, 476, 578, 682 278 280 282 300 310 320 322 324a 324b Dielectric plate conductive film alignment key second photoresist second photoresist pattern support plate third photoresist third photoresist pattern adhesive second trench fourth photoresist fourth photoresist pattern third Trench first sacrificial substrate second sacrificial substrate first probe second probe unit conductor beam member detection tip connection tip O: \ 89 \ 89662.DOC -68- 1242647 342 film 370a, 370b, 418, 472, 556, 656, 810, ceramic plate 820 362a, 362b, 370 dielectric 374a, 374b conductive layer 386a, 386b thin layer 404 slot 452, 558, 660, 662, 754 first layer 456, 562, 666, 764 first conductor 458, 564, 668, 766 First gold plating layer 474, 568, 760 Second layer 478, 572, 674, 774 Second conductor 480, 676, 776 Second gold plating layer 482, 578, 582 Fifth photoresist pattern 566 First guarantee Film 576, 670 Second protective film 652 Coating material 653 Cutting section 654 Sacrificial substrate block 667, 768 Protective film 758 Copper-plated structure 770 Third layer 774 Third conductor 821, 822 Terminal O: \ 89 \ 89662.DOC -69- 1242647 900 902 904, 955 907, 91, 967 908, 965 910, 975 912, 970 914, 924, 982 916, 980 918, 984 921, 986 922, 982 926 928 929 930, 974 932, 972 935 936 938 Beam member detection tip probe block fixing bolt first interface panel second interface panel probe holder anchor manipulator guide holding spring fixed component closed adhesive component lower closed adhesive component compression anchor guide film roll tape Encapsulation non-isotropic conductive film metal plate high elastic rubber O: \ 89 \ 89662.DOC -70-

Claims (1)

1242647 凛 092132733 Patent Application Chinese Application Patent Scope Replacement (April, 1994) Pick up and apply for patent application scope: 1 · A type of plate dielectric used to test a flat panel display; a plurality of conductors arranged in parallel; And at least one of the channels located above and below the dielectric, and the trenches are arranged in a predetermined configuration two: the first and the middle of the surface. A conductor of the electric conductor in the Dixian 2. The scope of the patent application item 1 ... Test-the first and second protruding areas of the mass of the flat panel display device are located-the dielectric strike-the central slot is located- On the plane, and,, the central groove is on the first and second protruding regions of the cymbal. The Dimugou link is the oldest one in the scope of the patent application for testing the 4 ± Beibu Zhai device. The probe is designed to overlap with the probe, and the overlapping probes. The conductors are parallel to each other. Please use the second item of the patent scope to test a flat panel display :: set the needle, in which the central groove is used all the methods (1) process shape 5. If the patent scope of the first item is used to measure the curved display Slave pins for immobile devices, where the conductors have sharp ends. = Patent No. 2 for testing the flat-panel display device wherein the interval between the first trenches formed on the first protruding areas and the first trenches formed on the second protruding areas 6. 1242647 between the grooves are different. 8. For example, please ask for a slave pin for testing a flat panel display device according to item [of the patent], wherein the dielectric is made of a ceramic material. For example, the bismuth needle used to test a flat panel display device according to the "W" of the patent, wherein the probe further includes a supporting component stacked on the dielectric material: the surface or the lower surface to fix these The conductor is in: " these first trenches on the electric property. 9. If a probe for testing a flat panel display is provided in item i of the scope of patent application, wherein the -ditch is formed by the -lithographic process and the -engraving process. / 、 Yi Yi Eclipse 10. If the probe for testing a flat panel display is applied for item 9 in the scope of patent application, each of the first and second trenches that have undergone the first etching process has a pyramid or a cross-section cone. And the first canals in which the second surname engraving process is further engraved with a cross-section gold-shaped conical outer shape until a predetermined deep production, so that-the bottom of each canal goes through a roundlng (roundlng ) 'System :, broad and 11.-a probe for testing-flat panel display device, including a pre-element contact assembly separately located at a fixed interval and fixed to a film, wherein the film has a predetermined ^ is In several single-top cymbal sizes, these unit connectors include a beam member with a rod shape, and its __ end is integrated on one end of the beam member. π d times 12. If it is used for item U of the patent scope ^ Ten-panel display device O: \ 89 \ 89662-940408.DOC 1242647 kt $ The knot tip is located at the other of the beam member 13. If the scope of patent application is the first? and. The thin film is widely used for testing a flat panel display device. . Made of -epoxide or -para-xylene 14 A probe for testing a flat panel display device, including a sacrificial substrate; the first channel formed by the birthday shirt process and the etching process-channel = guide Process ... The conductors at predetermined intervals are located in the s-Xuansi brother-ditch on the sacrificial base; a first dielectric formed on these conductors; and a second formed using the U shadow process and the etching process These conductors are exposed on a plane below the sacrificial substrate; ...-by placing a dielectric material into a second dielectric. The younger brother was formed in the middle of time 15. If the scope of application for patent No. 14 is used in the "thousand-panel display device", the -dielectric is made of -epoxide. • If the probe of item 4 in the scope of patent No. 4 is used for testing, it makes the second interface, not the device board. A ceramic bonded with oxides 17. A probe formed using a single sacrificial substrate, including a type of plate-like dielectric; and a plurality of conductors formed by a process that causes a plurality of conductive systems to be one of The trenches are buried in these trenches by —lithographic process and —etching conductive materials. The predetermined intervals in the trenches are located above and below the dielectric. O: \ 89 \ 89662-940408.DOC The 1242647 plane, and the conductors formed on the upper plane, are parallel to the conductors formed on the lower plane. If the team applied for item 17 of the scope of patent application, a probe formed using a single sacrificial substrate, wherein the pin further includes a plate-like supporting component stacked on the upper plane or the lower plane of the dielectric to fix the The location of these conductors. AAs in the application of the scope of patent application (single)-single-sacrificial probe formed by the substrate, wherein the plurality of conductors are the same length. 20. For example, a probe formed using a single sacrificial substrate in the scope of patent application No. 19, wherein the conductive systems of the same length formed on the upper plane of the remote dielectric are directed to the dielectric by a predetermined distance. ―Side offset, so that each of the conductors formed on the lower plane of the dielectric has a further protruding end and further compared with each of the conductors formed on the upper plane of the dielectric. The other end of the depression. 21. For example, a probe formed by using a single sacrificial substrate in the scope of patent application No. 17, wherein both ends of the dielectric have a step-difference appearance, so that the dielectric The conductors formed on the upper and lower planes protrude outward from the dielectric with equal length. Weep like: Please use a single _ sacrificial needle formed by sacrificial substrate, in the 17th area of the patent, where both ends of the dielectric have a slanted shape, so that the upper and lower of the dielectric The conductors formed on the plane protrude outward from the dielectric material at an equal length. 23.::Application: Exploration of the use of single-sacrifice substrate formation in the scope of patent No. 17: The conductors formed on the upper plane of the plutonium dielectric are all positioned O: \ 89 \ 89662-940408.DOC 1242647 in Between two adjacent conductors formed on the lower plane of the dielectric. 24. A probe formed using a single sacrificial substrate, comprising: a type of plate-shaped first dielectric; a second dielectric of a heap, which forms a step difference on top of the first dielectric; 乂A plurality of conductors arranged at a predetermined interval to penetrate the second dielectric; and, a conductive material is stacked on a plane of each of the conductors by a predetermined electrical method to form a conductive layer. 25. If a single-sacrificial substrate-formed probe is used for item 24 of the scope of patent application, wherein the probe further includes _ stacking on the first dielectric: the upper plane and the second dielectric On at least one of the lower planes: a brace assembly. 26. A probe formed using a single sacrificial substrate includes: a dielectric formed by stacking a ceramic plate above and below an epoxide; and a predetermined interval between the dielectric A plurality of conductors formed on the upper and lower planes; ^ I-a conductive layer stacked on a plane of each of these conductors by a predetermined plating method; and ^ x $ τ stacked on the dielectric 1 The supporting components on the upper and lower planes of Baobei 3 Temple fix the positions of these conductors. 27. A probe formed using a single sacrificial substrate, including: a type of plate-like dielectric; O: \ 89 \ 89662-940408.DOC 1242647 on a plane formed on a plane at a predetermined interval on a mesophilic mine A " Baube " These upper and lower flat conductors; stacked on the conductive layers of each of these conductors by a pre-plating method; stack: the upper and lower planes of the dielectric Optional components to fix the position of these conductors. 28 · —A method of manufacturing a probe for testing a flat plate _ τ called Euson ’s fasting device includes the steps: one above and below one dielectric, < A trench formation step, in which a complex excitation conductor is fixed on the dielectric in a pre-arranged configuration; and-a stack-support assembly is formed on an upper plane of the dielectric or a branch assembly on a lower plane. Step to fix the conductors in the first trenches on the dielectric. 29. The method of manufacturing a probe for testing __ + ^^ device as claimed in item 28 of the scope of patent application, wherein the method further includes sacrifice a central groove on a central area of the dielectric. A central groove forming step, thereby forming a first protruding area and a second protruding area on the dielectric portion of the dielectric, the first and first protruding areas having a predetermined area; and One is connected to the first grooves on the second protruding area in the central groove. V ϋ 30. The method of manufacturing a probe for testing a plane and a device as described in item 28 of the scope of patent application, wherein a primary probe is stacked on the probe O: \ 89 \ 89662-940408.DOC- 6- I242647 31, σ Jiu, and the conductor of the needle are parallel to the conductor of the probe. W · If the scope of application for the patent is 29j hundred + Greek "....... 4 members of Yi Yiyi is used to test a flat panel display world ^, where the first channel and the central groove are formed by all-side processes. 乐32. == Manufacturing of item 29 of the range is used to test a flat panel display. Setting: The needle method, wherein the temples formed on the first protruding area are spaced apart from each other on the second protruding area. The gaps formed between the trenches are different. 33. The method of manufacturing a flat surface to test a flat surface in the scope of the 28th patent: a method of placing a probe, in which the upper surface of the dielectric or the surface The components are fixed in the first trenches. 34. Kinds of manufacturing-used to test a flat panel display device includes: Steps to form a conductor-its system-micro The shadowing process and the conductive film forming process are made of a single sheet with a thickness of sacrifice, a sacrificial substrate, and two upper plane spots: a photoresist pattern with a predetermined thickness is formed on at least one plane of the surface to form a conductor; Electric mass formation step, which uses-lithography to form a photoresist pattern , 俾 Open—the central part of each of these conductors, and a dielectric substance is formed on the open central part of each of these conductors; Steps for forming giant and Zhugou, which are formed using the lithography and a money carving process The trench 'reveals the lower plane of each of these conductors.-A support group of O: \ 89 \ 89662-940408.DOC 1242647 is formed by embedding _ support material in these trenches. And the final step of removing the sacrificial substrate. 35. For example, a method for manufacturing a probe for testing a leveler device according to item 34 of the scope of patent application, wherein before the conductor forming step, the method further includes: -Forming a screen seed layer forming step on the upper portion of the sacrificial substrate. 9 of 36.1 claims a method of manufacturing a needle for testing a flat panel display ™ garment, wherein the conductor In the forming step, the conductors and the alignment keys are formed at the same time, and there are two specific distances between the alignment keys and the conductors. 〃 A: Manufacturing of the 34th area of the patent application-for testing-flat panel display Needle method where In the conductor forming step, a layer is formed on an upper portion of a sacrificial substrate before the conductors are formed. 7 38 · = Please make a 34th item of the patent scope for testing a grip on a flat panel display The method of needle, wherein in the step of forming the dielectric and the support, and the step of forming the support, after the dielectric and the supporting component are formed, the dielectric and the supporting component are ground. A method for fabricating a probe for testing a flat panel display device includes: forming first trenches with first trenches at the bottom of a round-broad process using the shadow process and the first and second etching processes; Steps; Conductor opening / forming step 'It is the opening of the central part of the -ditch with a -lithographic process', and then-the conductive material is buried in the opening area to form a conductor; O: \ 89 \ 89662-940408 .DOC 1242647-a dielectric forming step of forming a dielectric on an upper portion of each of the conductors using a lithography process and a dielectric film forming process; and a finishing process of removing the sacrificial substrate. 40. The method of manufacturing a probe for testing a flat panel display device according to item 39 of the patent application scope, wherein after the first trench forming step: before the conductor forming step, the method further includes forming a kind of Layer formation step. 3 Li Ru, a method of manufacturing a probe for testing a flat panel display device under item 39 of the scope of patent application, where each of the first trenches that have undergone the first etching process has a gold-cutting tower or a cross-section cone Wherein each of the first trenches having a cross-section pyramidal cross-section outer shape is further etched by the second etching process to a predetermined depth and a bottom of each of the first trenches undergoes a rounding process. And 42.-A method of manufacturing a probe sheet for testing a flat panel display device, comprising the steps of: ^-forming on a sacrificial substrate-the first protection case, by which the unit &Area; using the first-protective film pattern as a money engraving mask to form a trench on the sacrificial substrate by performing a money-engraving process; A removing the first protective film pattern; removing the first protective film A second protective film pattern is formed on the sacrificial substrate to thereby define a region where a plurality of unit contact components are formed. A beam structure O: \ 89 \ 89662-940408.DOC -9- 1242647 A metal film is formed on the sacrificial substrate at the second protective film pattern to form a beam member of the unit contact assembly. The beam members of the unit contact assembly are turned on by removing the second protective film pattern; The size will open the sacrificial substrate tangent to the beam contact members of the unit; the sacrificial beauty of the tangent will be placed on a film with a predetermined size. Attach and fix the beam contact members of the unit contact assembly on the film: on the lower portion; and open the tips of the unit contact assembly by removing the sacrificial substrate at the attachment and fixation film. 43. For example, a method for manufacturing a probe sheet for testing a flat panel display device according to item 42 of the patent application range, wherein the formation of the first and the second protective film patterns is: coating a photoresist on the sacrificial substrate The above steps; and a step of exposing and developing the photoresist. 44. For example, a method for manufacturing a probe sheet for testing a flat-plate release-drying device according to item 42 of the patent application range, wherein the film is made of a ring, a polymer, and a pair of dimethylbenzene. 45 · A method of manufacturing a probe using a single-sacrifice substrate, including: = using -lithography and-last name engraving process to form a first-ditch on the single-sacrifice substrate and on a lower plane. A forming step, wherein the single sacrificial substrate has a predetermined thickness; a conductor forming step of forming a conductor O: \ 89 \ 89662-940408.DOC -10- 1242647 by embedding-conducting material in the first ridges; ^ Using a lithography and an etching process to form a second trench on the lower part of the conductors, the second trench formation step is performed by burying a conductive material in the second trenches. A dielectric forming step of the dielectric; t a supporting component forming step of forming a supporting component on at least one of the upper and lower planes of the sacrificial substrate at which the dielectric is formed, · removing the sacrificial The end step of the substrate. 46. 47. 48. 49. According to the application of the scope of patent application No. 45-single-sacrificial substrate manufacturing method of a probe, wherein the sacrificial substrate is a silicon wafer. For example, in the application of the scope of patent application No. 45-a method of manufacturing a single substrate, the method is to apply-epoxy in these trenches, and then insert and attach before curing Ceramic plates are formed in the first trenches to form the dielectric, wherein the ceramic panels are pre-prepared at a size suitable for being inserted into the trenches. For example, the use of item 45 in the scope of patent application—single-sacrifice substrate manufacturing method of a probe ', in which ceramic plates are inserted into the trenches, and then a percentage of oxide is attached to the trenches and the trenches. The dielectric is formed in a gap formed between the ceramic plates, wherein the ceramic plates are prepared in advance at a size suitable for being inserted into the trenches. For example, the use of item 45 in the scope of patent application-a single-sacrificial substrate manufacturing method of a probe 'wherein in the conductor forming step, a seed layer is formed on the sacrificial substrate, and then an electrolytic-plating process is performed. The O: \ 89 \ 89662-940408.DOC -11-1242647 and other conductors. 50. The method of manufacturing a probe using a single substrate as described in item 45 of the scope of patent application, wherein the method further includes a step of forming a conductive layer, which uses a plating process to stack a conductive material on the conductors A conductive layer is formed on the plane. 51 · A method for manufacturing a probe using a single substrate, including a first protective film forming step of forming a first protective film on the single sacrificial substrate, wherein the single sacrificial substrate has a predetermined thickness, Wherein, the first protective film pattern is used to form a conductor; a step of forming a conductor on the upper conductor by burying a conductive material in the first protective film pattern; and forming a conductor on the sacrificial substrate where the conductors are formed. A first protective film forming step of a second protective film, wherein a support component is formed by using the second protective film pattern; a support forming step of forming an upper support component in the second protective film pattern; using a lithography And an etching process to expose the upper conductor to form a trench forming step on a plane below the substrate; a trench is formed by embedding a dielectric material in the trenches A step of forming a dielectric; and a step of removing the sacrificial substrate. 52. If the use of item 51 in the scope of the patent application-a method for manufacturing a probe with a single sacrificial substrate, /, before the step of sacrifice the sacrifice substrate, the method further includes O: \ 89 \ 89662-940408.DOC -12- 1242647 It is formed by forming The next step of conductor formation is to form a conductive material on the dielectric to form the third film. The epoxide is applied in the trenches, and then cured in 忒% oxide. The dielectric is formed by inserting and attaching ceramic plates in the first trenches, wherein the ceramic plates are prepared in advance in a size suitable for being inserted into the trenches. 55. The method for manufacturing a probe using a single substrate as described in item 51 of the scope of the patent application, wherein a ceramic plate is inserted into the trenches, and then an epoxy is applied and attached to the trenches and the trenches. The dielectric is formed in a gap formed between ceramic plates, wherein the ceramic plates are prepared in advance at a size suitable for being inserted into the trenches. 56_ The method of manufacturing a probe using a single substrate as described in item 51 of the scope of patent application, wherein in the conductor forming step, the layer is formed by forming a layer on the sacrificial substrate and then performing an electrolytic plating process And so on. 57. The method for manufacturing a probe using a single substrate as described in item 51 of the scope of patent application, wherein the method further includes a step of forming a conductive layer, O: \ 89 \ 89662-940408.DOC -13-1242647 A conductive material is stacked on a plane above the conductors by a plating process to form a conductive layer. 58. The use of item 51 of the stated patent scope—method for manufacturing a probe with a single-plate substrate ', wherein in the supporting component formation step, a lithography = and-etching process is used to form a trench, and then a supporting material is applied In: Waiting in the trench to form the support assembly. 59. A method for using a single-single-substrate substrate manufacturing-probe, comprising: forming a first trench on a predetermined portion of the single-sacrifice substrate; A trench formation step, in which the single-sacrificial substrate is made of a predetermined material, and undergoes a polishing process to have a predetermined thickness, and the temple uses the temple to form a dielectric; A dielectric material forming step in the first channel to form the dielectric material; A conductor forming step of forming a conductor by forming a protective film pattern on and above the sacrificial substrate where the dielectric is formed, and then burying a conductive material in the protective film pattern; and removing the The final step of sacrificing the substrate. Shi Shen „The use of item 59 of the monthly patent offense—single-sacrifice substrate manufacturing method-needle method ', where the sacrificial substrate is a stone wafer. 61 · If the application of the scope of patent application No. 59_single-sacrifice substrate manufacturing- '' Ten methods of which use a dry etching process to form these first killings 62. Such as the application of the scope of the patent application No. 59 use-single-犠 animal substrate t-pin method 'where the use-tangent process to form the first 63. If the scope of the patent application is the first, the use of _ single sacrificial substrate manufacturing-O: \ 89 \ 89662-940408.DOC -14-1242647 needle method, wherein an epoxy is applied to the first channels The dielectric is formed by inserting and attaching ceramic plates in the trenches before curing the epoxide, wherein the ceramic plates are adapted to be inserted into the first trenches. The dimensions in the trenches are prepared in advance. 64. The method of manufacturing a probe using a single sacrificial substrate as described in item 59 of the patent application scope, wherein by inserting ceramic plates into the first trenches, connecting / attaching Connect% oxide to the first trenches and the ceramic plates The dielectric material is formed in the open / completed gap, wherein the ceramic plates are 65 in advance with a size suitable for being inserted into the first trenches. For example, the use of a single item in the scope of the patent application 59-sacrifice A method for manufacturing a probe on a substrate, wherein in the conductor forming step, these conductors are formed by forming a seed layer on the sacrificial substrate and then performing an electrolyte electrolyte process. 67. 68. Such an application is a method of manufacturing a two-piece method using a single sacrifice substrate, wherein the method further includes—a support component forming step of forming a support component on one of the upper and lower planes of the sacrificial substrate. A method for manufacturing a probe using the patent scope item 66_single substrate. In the step of forming the supporting assembly, an epoxide is applied, and then a ceramic plate is attached to a plane above the epoxide. For example, a method for manufacturing a probe using the single-strip substrate on the basis of the scope of patent application No. 66, wherein in the supporting component formation step, a lithography process is used to form a trench, and then applied A support material is added to the trenches to form the support assembly. O: \ 89 \ 89662-940408.DOC -15-1242647 69 · As a result of using a single sacrificial substrate to manufacture a patent, the scope of the application is 59. Needle method, wherein the method further includes a conductive layer forming step, which uses a plating process to stack a conductive material on the upper planes of the conductors to form a conductive layer. 70. A method using a single substrate A method for manufacturing a probe includes: a trench forming step of forming a trench with a predetermined depth on a predetermined area on a flat surface of a single sacrificial substrate; and forming a first on the sacrificial substrate where the trench is formed The first protective film pattern forming step of the protective film pattern, thereby opening the trenches;-burying the trench, burying the material in the trench embedding step in the first trench, where the first protective film pattern is opened, where The etch trench embedded material is removed by an etching process; # the second protective film pattern forming step of forming a second protective film on the sacrificial substrate and on the + surface using the y lithography process, where The second protective film pattern forms a conductor; ^ a conductor forming step of forming a conductor at a specific position defined by the second protective film pattern; Ming Lu Yi in forming the sacrifice substrate at the body Wait for the upper and lower flat 3 to form a third Baomo film Gang'an # Another step of the protective film pattern forming step of the younger one of the pancreas pattern, in which the third shovel is used to form a supporting component; a second protective component is formed at the 5th protection; Membrane picture 荦 架着 ## ... A step of forming a support assembly forming a brown piece at a special position on the boundary of the mouth tea; and a sacrifice where the removed part is separated by the beam and the well-moving trench The substrate and the completion step of the burying material in the Haimugou. O: \ 89 \ 89662-940408.DOC -16- 1242647 71 • If the method for manufacturing a probe using a single substrate is applied to item 70 of the scope of patent application, before forming the conductors, the method further includes an advantage: A polishing process removes the planarization step of the μ-protection film pattern formed on the upper plane of the sacrificial substrate and the trench buried material protruding upward from the sacrificial substrate. • The method of manufacturing a λ r ^ using a single substrate as claimed in item 70 of the patent scope, wherein before the conductors on the lower plane of the sacrificial substrate in the step of forming the second protective film pattern, The method further includes a planarizing step of removing the sacrificial substrate by a polishing process to expose the dielectric. '73. Please refer to the patent scope of 7G for the manufacturing method of the H-substrate substrate, wherein the sacrificial substrate is made of a ceramic material. 74. A method of manufacturing a single-probe substrate-probe using the scope of patent application item 70, wherein these channels are formed by an all-inclusive process. 75. If the use of the scope of the patent application for item 1-single-battery substrate manufacturing-exploration, go to one of them to form the trench and embed the material by an electrolytic power ore process. 76. The method of making a H.sub.substrate substrate-probe according to item 7G of the patent, wherein the conductor forming step includes a layer forming step, which is performed on the sacrificial substrate before forming the conductors. A seed layer is formed on the lower plane. Shi Shen called the 70th method of manufacturing a probe using a single substrate in the patent scope, wherein the method further includes the step of forming a conductive layer on a plane above each of the conductors by using a conductive material to stack the conductive layers. . O: \ 89 \ 89662-940408.DOC 1242647 78. 79. The method of manufacturing a probe using a single substrate as described in the 77th item of the patent application of Fan Qingwei, is to rename a household— & In the step of forming the conductive layer, an I ° conductive material is made on the planes of these conductors by a sputtering method. 2. Use of the 7G of the patent application scope—single-slab substrate manufacturing method of a probe Yinjia selectively removes the trench buried material by a wet etching process in this finishing step. O: \ 89 \ 89662-940408.DOC