1261890 九、發明說明： 【發明所屬之技術領域】 ，更詳而言之是指 種微接 本發明係與接觸元件有關 觸元件及其製造方法。 【先前技術】1261890 IX. Description of the invention: [Technical field to which the invention pertains] More specifically, the invention relates to a contact element and a method of manufacturing the same. [Prior Art]
按，在測試高密度或高速之電氣裝 電路）時，必減用具有大量微接觸 或VLSI (Probe C_，以藉由贿接 $ 的探針卡 r連接之導糊性，作為與二 然’微接觸7G件，亦可用以作為Ic封裝的Ic引線之 惟，為便於後續之說明，其微接觸亓杜 卡之探針純敘述。主要心作為探針 15 士 —般習用之微接觸元件技術，尤以垂直式探針元件而 α，可概分為以傳統之鍛造方式及以微機電方式所製造而 成。 σ 、其中’請參閱第十圖，傳統之探針乃是採用金屬線材， 以鍛造之方式製作其可彎曲之彈性部位（1)(如美國專利第 US4027935號）’惟，利用傳統之機械加工方式(锻造），將 使得探針彎曲之彈性部位上會殘留有較大之殘餘應°力，使 得探針在長期操作後易有疲勞斷裂之情形;且傳統精密機械 加工之製作精度亦會較以微機電技術所製出者差，使得夂 楝針間之彈性恢復力差異較大，易造成探針接觸阻抗之控 4 20 1261890 制不易；同時在探針變形量較大時，各探針間過大的變形差 異，亦將使部分探針產生過大之不當針壓而損傷待測試物 ^接觸塾。再者，在對於需以其探針之針尖突破待測試物 ί面之應用上，此探針需以人卫方式研磨出針尖結 Ή因難度相當之大，而其精度之控制則更是不易。 因此’如美國專利第US2〇〇3〇〇57957號申請案，便提 ^-種__技術以提高探針的針體製作精度之製程方 屬薄膜之上下表面以光阻材料利用光刻技術 t :二後，直接採用大面積等向性濕蝕刻之方式 批次製造赌針舰。麟騎造製_較 力體類’此種探針針體亦可避免因鍛造 15 20 =又=刻之方式更可同步製作出探針之針尖 架上加方式自-模型框 且r大面積等向性祕到直接敍到出針體之方式， J句勻度與其再現性均不易控制。 再者，如我國專利公告第44〇897號，苴 :電製程技術製作探針，該製程主要係於二夕基 成形出-犧牲層，再依次成形—導電 ，"你先仃 層上方塗佈一遮蔽層並利用 ‘=種子 ==，而於該開口内沈積-導電材料，再 研磨方式將沈積之導電材料上方表面平整化後，再以蝕 5 罐 1261890 =製程去除遮蔽層、犧牲層及導電 在夕基底上先行成形出一犧牲層 =)為材料，此—材料易又而-=石二 5 度如嚴重時，會趨近於探針之厚S寸 =仔2之厚度尺寸誤差會有過大之情形，導致不良率 二録2，綠針在研磨其表面之平整度時，乃係藉由 為支撐之用，但遮蔽層之材質(較軟質)本就不利於 :為=之用’使得探針在研磨時易因遮蔽層之支職不 10離/ttlt均勾性不佳，探針容易於研磨過程中脫落(脫 程良率不佳之情形。再者，此一探針之製程 作出可用以突破如錫球等待測物的表面氧化層之 針大4，進而降低接觸阻抗以取得較佳之電性通連。 15【發明内容】 = 監於此，本發明之主要目的乃在提供一種微接觸元 件及，、製造方法，係能降低基板應力彎曲，進而提高微接 觸元件之尺寸精度。 本發明之另-目的在於提供一種微接觸元件及其製造 20方法，係能加強研磨其平整度時之穩定性。 、本發明之又-目的在於提供—種微接觸元件及其製造 方法’係可增加其尖端部位之抗磨耗性、低法黏性及導電 本么明之再-目的在於提供—種微接觸元件及其製造 6 1261890 方法，其微接觸元件具有良好之訊號傳輸、增加傳輸頻寬 及減少訊號耦合與電容效應者。 緣是，為達上述目的，本發明所提供一種微接觸元件 5 之製造方法，其步驟包含有:在一表面不具導電性之基板上 成形一導電薄膜;在該導電薄膜上成形出一具圖形化開口之 遮蔽層;在該遮蔽層之開口中沈積一導電材料;去除遮蔽層; 去除導電薄膜，使由導電材料所製成之微接觸元件與基板 分離。 10 【實施方式】 為使貴審查委員，能對本發明之特徵及目的有更進一 步之瞭解與認同，茲列舉以下較佳之實施例，並配合圖式 說明於後： 15 第一 A圖至第一 Η圖係本發明第一較佳實施例之製程。 第二Α圖至第二J圖係本發明第二較佳實施例之製程。 第三A圖至第三J圖係本發明第三較佳實施例之製程。 第四A圖至第四L圖係本發明第四較佳實施例之製程。 第五A圖至第五K圖係本發明第五較佳實施例之製程。 20 第六A圖至第六K圖係本發明第六較佳實施例之製程。 第七A圖至第七F圖係本發明第七較佳實施例之製程。 第八A圖至第八F圖係本發明第八較佳實施例之製程。 第九A圖至第九J圖係本發明第九較佳實施例之製程。 7 1261890 請參閱第一 A圖至第—Η圖，係本發明第一較 例所提供-體闕元件之料方法， 所製造之微接觸元件細料騎闕 包^方法 ⑻如第-A_t於—表料具 =) 舖設成形出-導電薄膜(12)。 w〈減(11)上 其中，該基板(11)之材料可為半導體材料、表面 :電：質之金屬板、高分子材料、陶瓷材 如石夕基板。該導電_12)可為具有良好附著性之=專如 鈦金屬;該導㈣膜(12)係可#由習知之半導體製程技術 基:(11)之表層上’其沈積製程可為蒸鑛、濺鍍咬 電鍍等製程技術。 4 ⑻如第- Β圖、第—c圖及第 15 其中’係先於該導電薄膜(12)上塗佈-由光阻材料所構 成之遮蔽層⑽如第-㈣所示），並利 之光刻製程(微韻刻製程)(如第一 c :成:出具備探針圖形之該開口⑽如第一 光刻製程係利用-光罩㈣對正於遮蔽層（13)，並= 如第—C騎示，光罩(14)便能將探針圖 ^晚在遮敝層（13)上(即形成該開口⑽。由於光阻』 了概刀成正光阻材料或負光阻材料，而正光 阻材料皆可軸上義影之目的，《差異在於 洗掉，而被光罩不透光部份所蓋住的遮蔽層部份 8 20 1261890 f光後所硬化而留下;反之，負光阻材制係指受光罩透光 邛=所曝光之遮蔽層部份會呈硬化而留下，而被光罩不透 伤所蓋住的遮蔽層部份則會被溶解或被沖洗掉。於本 實施例中係採用負光阻材料之態樣顯影，惟正光阻材料亦 可同樣達成本步驟之目的。 另卜亦了利用灰階光罩（141)，即利用在光罩（μ)之 區域中控制不同之曝絲(強)度，而使遮蔽層⑽形成 =定區域之斜面(如第一 C圖及第一 D圖所示），用以製 成探針之針尖部位。 田然，對遮蔽層（13)曝光之紫外線亦可改為電子束、 射線或雷射·，·等。惟，此—曝光技術乃屬習知技 此便不多作贅述。 甘 is 20 (c)如第-E圖所示··於遮蔽層（13)之開口（15)中沈積一 導電材料(16)。 、 其中，沈積之製程可為半導體製程技術之蒸鍍、濺鍍 等。該導電材料⑽係可為電鑄材料，如錄⑽金 鸯或其它導電性佳之金屬材料。 ⑷如第-F圖所^:將導電材料⑽表面平整化。 係利用精密研紅方式料電材料⑽表面加以研 使其表面達到平整’以藉此—步驟將導電材料 出所須之厚度。 (e)如第一 G圖所示:去除遮蔽層（13)。 雷將ϋ用朗製程將該麵層（13)去除，其_製程可採用 水子餘刻或化學兹刻方式，且其敍刻材料及條件經過 9 1261890 $擇僅’、餘去遮蔽層（13)而對導電材料（16)並無任何影 料(：形第二:所示:去除導電薄膜(12)以應導電材 ㈣程將導電細(12)去除，如此—來，該導電 " 凡成探針之型態而可自該基板(11)上脫離加以取Press, when testing high-density or high-speed electrical equipment, it must be reduced with a large amount of micro-contact or VLSI (Probe C_, to connect the probe card r by bribing $, as a two-way The micro-contact 7G piece can also be used as the Ic lead of the Ic package. For the convenience of the following description, the probe of the micro-contact 亓 Duka is purely described. The main point of the probe is the micro-contact element technology commonly used as a probe. In particular, the vertical probe element and α can be roughly classified into a conventional forging method and a microelectromechanical method. σ , wherein 'see the tenth figure, the conventional probe is made of metal wire. The bendable elastic portion (1) is produced by forging (such as U.S. Patent No. 4,027,935). However, by using conventional machining methods (forging), the elastic portion of the bend of the probe will remain large. Residual force should make the probe easy to fatigue and break after long-term operation; and the precision of traditional precision machining will be worse than that produced by micro-electromechanical technology, which will make the elastic recovery force difference between the needles. Larger It is easy to control the contact impedance of the probe 4 20 1261890. At the same time, when the deformation of the probe is large, the excessive deformation difference between the probes will cause the partial probe to generate excessively large improper pressure and damage the object to be tested. ^Contact 塾. Furthermore, in applications where the tip of the probe needs to be used to break through the surface of the object to be tested, the probe needs to be polished in a human-powered manner due to the difficulty of the needle tip, and its precision control. Therefore, it is not easy. Therefore, as in the application of U.S. Patent No. 2,037,579, the technique of improving the precision of the needle body of the probe is to improve the precision of the needle body of the probe. The material uses lithography technology t: two, directly using large-area isotropic wet etching to batch-produce the gambling needle ship. Lin riding _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 20 = again = engraved way can be made simultaneously with the probe tip holder plus the method from the - model frame and r large area isotropic to the direct way to the needle body, J sentence uniformity and its reproducibility It is not easy to control. Furthermore, as in China Patent Notice No. 44〇897, 苴: Electro-process technology to make probes, the process is mainly based on the formation of the sacrificial layer - sacrificial layer, and then formed into - conductive, "you apply a mask layer above the layer and use '= seed ==, and Depositing a conductive material in the opening, and then flattening the upper surface of the deposited conductive material by grinding, and then removing the shielding layer, the sacrificial layer and the conductive layer on the etched substrate to form a sacrificial layer by etching 5 cans 1261890 = process Material, this material is easy and -= stone 2 degrees, if serious, will approach the thickness of the probe S inch = the thickness of the 2 size error will be too large, resulting in a bad rate of 2 recorded 2, green needle When grinding the flatness of the surface, it is used for support, but the material of the shielding layer (softer) is not conducive to: use for 'use' makes the probe easy to be supported by the shielding layer during grinding Not 10 detachment / ttlt is not good, the probe is easy to fall off during the grinding process (the situation of poor off-rate yield). Moreover, the process of the probe can be used to break the needle 4 of the surface oxide layer such as the solder ball waiting for the object, thereby lowering the contact resistance for better electrical communication. [Explanation] In view of the above, the main object of the present invention is to provide a micro contact element and a manufacturing method capable of reducing stress bending of a substrate and thereby improving dimensional accuracy of the micro contact element. Another object of the present invention is to provide a microcontact element and a method of manufacturing the same that is capable of enhancing the stability of the flatness of the polishing. Further, another object of the present invention is to provide a micro-contact element and a method of manufacturing the same, which can increase the wear resistance of the tip portion, the low-viscosity and the conductivity, and the purpose of providing a micro-contact element and It manufactures the 6 1261890 method, and its micro-contact elements have good signal transmission, increased transmission bandwidth, and reduced signal coupling and capacitance effects. In order to achieve the above object, the present invention provides a method for manufacturing a microcontact element 5, the method comprising: forming a conductive film on a substrate having no surface conductivity; forming a pattern on the conductive film The shielding layer of the opening; depositing a conductive material in the opening of the shielding layer; removing the shielding layer; removing the conductive film to separate the micro contact element made of the conductive material from the substrate. [Embodiment] In order to enable the reviewing committee to have a better understanding and recognition of the features and objects of the present invention, the following preferred embodiments are illustrated and described with reference to the following: 15 First A to first The drawing is a process of the first preferred embodiment of the present invention. The second to second J drawings are processes of the second preferred embodiment of the present invention. The third to third J drawings are processes of the third preferred embodiment of the present invention. The fourth to fourth L drawings are processes of the fourth preferred embodiment of the present invention. The fifth to fifth K drawings are processes of the fifth preferred embodiment of the present invention. 20A to 6K are processes of a sixth preferred embodiment of the present invention. 7A through 7F are processes of the seventh preferred embodiment of the present invention. 8A to 8F are processes of the eighth preferred embodiment of the present invention. The ninth to fifth ninth drawings are processes of the ninth preferred embodiment of the present invention. 7 1261890 Please refer to the first A to the first drawing, which is a method for feeding a body element according to the first comparative example of the present invention, and the micro contact element fine material riding bag method (8) is as described in the first -A_t - Table material =) Laying out - Conductive film (12). w<减(11) The material of the substrate (11) may be a semiconductor material or a surface: an electric metal plate, a polymer material, or a ceramic material such as a stone substrate. The conductive_12) may be of good adhesion = specifically for titanium metal; the conductive (four) film (12) may be made of a conventional semiconductor process technology base: (11) on the surface layer 'the deposition process may be steamed ore Process technology such as sputtering and plating. 4 (8) as in the first-figure diagram, the -c diagram and the fifteenth, wherein 'the coating is applied on the conductive film (12) - the shielding layer (10) composed of the photoresist material is as shown in the first - (four)), and Lithography process (micro-finishing process) (such as the first c: into: the opening (10) with the probe pattern, such as the first lithography process using the reticle (four) aligned with the shielding layer (13), and = The first-C riding, the photomask (14) can put the probe image on the concealing layer (13) (that is, the opening (10) is formed. Due to the photoresist, the knife is formed into a positive photoresist material or a negative photoresist material. The positive photoresist material can be used for the purpose of on-axis imaging. The difference is that it is washed away, and the portion of the shielding layer covered by the opaque portion of the reticle is hardened and left behind; The negative photoresist system refers to the light transmission of the mask. The exposed portion of the mask layer will be hardened, and the portion of the mask layer covered by the mask will be dissolved or washed. In this embodiment, the negative photoresist material is used for development, but the positive photoresist material can also achieve the purpose of this step. In addition, the gray scale mask (141) is utilized, that is, the use In the area of the mask (μ), different exposure (strength) degrees are controlled, and the shielding layer (10) is formed into a slope of the fixed area (as shown in the first C picture and the first D picture) for forming the probe. The needle tip part. Tian Ran, the ultraviolet light exposed to the shielding layer (13) can also be changed to electron beam, ray or laser, etc. However, this exposure technique is a conventional technique and will not be repeated.甘is 20 (c) as shown in Figure-E, a conductive material (16) is deposited in the opening (15) of the shielding layer (13). wherein the deposition process can be an evaporation process of a semiconductor process technology. Sputtering, etc. The conductive material (10) may be an electroformed material, such as a nickel (10) metal or other conductive metal material. (4) As shown in the figure -F: the surface of the conductive material (10) is flattened. The surface of the material (10) is ground to make the surface flat. In order to obtain the required thickness of the conductive material, (e) as shown in the first G diagram: removing the shielding layer (13). The process layer removes the surface layer (13), and the process thereof can adopt the water residue or chemical engraving mode, and the material and conditions are described. After 9 1261890 $ select only ', leaving the shielding layer (13) and there is no shadow on the conductive material (16) (: shape second: shown: remove the conductive film (12) to conductive material (four) process will be conductive Fine (12) is removed, so that the conductive type can be taken from the substrate (11)
蚀亥，¾可採用電漿離子姓刻或化學蚀刻方式，且其 則材料及條件㈣選擇，只財導電薄即2)對導電材料 (16)並無任何影響。 10 ± _實上’亦可在步驟⑹中以化學#刻方式去除光阻 叶配超曰波震動促使導電材料⑽與導電薄膜(η)剝 離，以取出由導電材料⑽所構成之探針，而無需經過步驟 (f)便可取出探針。 疋以Jiit即為本實施例所提供第一較佳實施例微接 15觸元件之製造方法，相較於習知之製程，不僅可相對減少 塗佈犧牲層（即二氧化石夕)之步驟，亦能同時減少需侧犧牲 層之步驟。而習知製程塗佈犧牲層之目的僅在於使當該犧 牲層钱去後’便能將微接觸元件與基板脫離，而本發明在 藉由直接將導電薄膜钕刻去除後，或以超音波震動促使微 2〇接觸兀件與導電薄膜剝離，便能使得微接觸元件與基板分 離，不僅可省去習知塗佈犧牲層及㈣犧牲層之製程步 驟，更可避免由犧牲層之材料(二氧化石夕)造成薄膜應力問題 而導致基板幫曲之情形’以提升微接觸元件的製程精度。 請參閱第二A圖至第二J目，係本發明所提供第:較 10 4 1261890 佳實施例微接觸元件之製造方法，其步驟包含有： (a) 如第二A圖所示:於一表層不具導電性之基板(21)上 成形出一導電薄膜(22)(與第一較佳實施例之(a)步驟相同）。 (b) 如第二B圖、第二c圖及第二D圖所示:在該導電 5薄膜（22)上成形出一具備探針圖形開口（25)之遮蔽層 \ (23)(與第一較佳實施例之⑻步驟相同）。 (c) 如第二E圖所示··於遮蔽層(23)之開口（25)中沈積一 _ 導電材料(26)(與第一較佳實施例之((;)步驟相同）。 (d) 如第二F圖所示:將導電材料(26)表面平整化(與第一 1〇較佳實施例之(d)步驟相同）。 (e) 如第二G圖所示:去除遮蔽層(23)(與第一較佳實施 例之(e)步驟相同）。 ⑴如第二Η圖及第二〗圖所示:於導電材料(26)尖端(針 尖)部位塗佈一強化薄膜(27)。 15 其中，該強化薄膜(27)具有抗磨耗、低沾黏性、良好導 鲁 1：性之特性，如铑金屬，#然亦可_多種材料構成該強 化薄膜;該強化薄膜(27)係利用一遮罩(28)，以濺鑛之方式塗 佈於該導電材料(26)之針尖部位上。 (g)如第二I圖所示:完成塗佈強化薄膜(2乃。 ' 2〇 ⑻如第二J圖所示:餘刻導電薄膜(22)以取出由導電材 ^ 料⑽及該強化薄膜(27)所形成之探針。本步驟係利用餘刻 製程將導㈣膜(22)去除，其侧製程可_電漿離子飿刻 或化:飿刻方式’且其飿刻材料及條件經過選擇，只飯去 ^電薄膜(22)對導電材料(26)及強化薄膜⑼並無任何影 1261890 響。 所彭成之上述之製程步驟，便能於由導1材料(26) 件)針尖部位’鑛上—層強化薄膜 木+ a於接觸時便能藉由其強化薄膜(27)之特 長其二：性(增加傳輪訊號效率)及減少磨耗程度(增 其中於步驟⑴塗佈強化薄膜(27)時，亦可該遮軍⑽之 使強化薄膜⑼並不僅限制沈積於單一部位之區域 P僅可沉積於針尖部位，亦可沉積於其它部位上亦可 Γί遮罩(28)數目之數量增為多張’使塗佈強化薄膜(27)之 滑數可為-至多層’端視實際需求選擇適當之製程。 、另外，亦可在步驟(h)中將蝕刻導電薄膜(22)之步驟改 以超音波震動之方式使由導電材料(26)所構叙探針盥基 板剝離。 … 口月參閱第二A圖至第三j圖，係本發明所提供第三較 參 佳實施例微接觸元件之製造方法，其步驟包含有： (a)如第二a圖所示··於一表層不具導電性之基板(31)上 成形出一導電薄膜(32)(與第一較佳實施例之(a)步驟相同）。 “ （b)如第三B圖、第三c圖及第三〇圖所示:在該導電 ' 2〇溥膜（32)上成形出一具備探針圖形開口（35)之遮蔽層 ‘ (33)(與第一較佳實施例之(b)步驟相同）。 (c) 如第三E圖所示:於遮蔽層(33)之開口（35)中填入一 支撐材料(36)(與第一較佳實施例之(c)步驟相同）。 (d) 如第三F圖所示:去除遮蔽層(33)(與第一較佳實施例 12 1261890 之(e)步驟相同）。 口内沈 (e)如第三G圖所示:於支撐材料(36)所形成之開 積一導電材料(38)。 、於步驟⑹中，該支撐材料(36)可以额、沈積或塗佈之 方式形成，且該支撐材料(Μ)之材料與導電賴(32)、 (31)及導電材料(38)之材料不同。該支撐材料 二 為塑膠材質或銅...等。In the case of eclipse, 3⁄4 can be plasma ion or chemical etching, and the material and condition (4) are selected. Only the conductive thinness is 2) and the conductive material (16) has no effect. 10 ± _ in fact ' can also be removed in step (6) by chemical etching to the photoresist blade with super-chopping vibration to promote the peeling of the conductive material (10) and the conductive film (η) to take out the probe composed of the conductive material (10), The probe can be removed without going through step (f). JJiit is the manufacturing method of the micro-contact 15-contact element of the first preferred embodiment provided by the embodiment, which can not only relatively reduce the step of coating the sacrificial layer (ie, the day of the oxidization), compared with the conventional process. It is also possible to simultaneously reduce the steps of the sacrificial layer. However, the conventional process of coating the sacrificial layer only serves to enable the microcontact element to be detached from the substrate when the sacrificial layer is removed, and the present invention is obtained by directly etching the conductive film or by ultrasonic wave. The vibration causes the micro 2〇 contact element to be peeled off from the conductive film, so that the micro contact element is separated from the substrate, not only the conventional coating process of coating the sacrificial layer and the (4) sacrificial layer, but also the material of the sacrificial layer can be avoided. The problem of film stress caused by the problem of the film stress is caused by the problem of the film stress in order to improve the process precision of the micro contact element. Please refer to the second to second objects, which are provided by the present invention. The method for manufacturing the micro contact element of the preferred embodiment is as follows: (a) as shown in the second embodiment: A conductive film (22) is formed on a non-conductive substrate (21) (the same as step (a) of the first preferred embodiment). (b) as shown in the second B diagram, the second c diagram, and the second diagram D: a shielding layer (23) having a probe pattern opening (25) is formed on the electroconductive 5 film (22) (and The step (8) of the first preferred embodiment is the same). (c) As shown in Fig. EE, a conductive material (26) is deposited in the opening (25) of the shielding layer (23) (the same as the ((;) step of the first preferred embodiment). d) as shown in the second F: flattening the surface of the conductive material (26) (same as the step (d) of the first preferred embodiment) (e) as shown in the second G: removing the shadow Layer (23) (same as step (e) of the first preferred embodiment). (1) As shown in the second and second drawings: a reinforced film is applied to the tip (tip) of the conductive material (26). (27). 15 wherein the reinforced film (27) has anti-wear, low-viscosity, good conductivity characteristics, such as bismuth metal, #然然_ a variety of materials to form the reinforced film; (27) is applied to the tip portion of the conductive material (26) by means of a mask (28) by splashing. (g) as shown in the second I: completing the coating of the reinforcing film (2) ' 2 〇 (8) as shown in the second J: the conductive film (22) is left to take out the probe formed by the conductive material (10) and the reinforced film (27). This step is guided by the process of the etch. (4) The film (22) is removed, and the side process can be _plasma ion engraving Chemical: the engraving method' and its engraving materials and conditions have been selected, only the electric film (22) has no shadow on the conductive material (26) and the reinforced film (9). The process steps mentioned above are The strength of the film (27) can be enhanced by the strength of the film (27) when it is contacted by the tip of the material (26). Reducing the degree of wear (in addition to the step (1) of applying the reinforced film (27), the reinforced film (9) may not only limit the deposition of the layer P to a single portion, but may be deposited on the tip of the needle, or may be deposited on In other parts, the number of masks (28) can be increased to a plurality of sheets, so that the number of slides of the coated reinforcing film (27) can be - to the multilayer layer, and the appropriate process can be selected according to actual needs. In the step (h), the step of etching the conductive film (22) is changed to ultrasonic wave vibration to detach the probe substrate from the conductive material (26). ... The second month to the third j The present invention provides a third preferred embodiment of the microcontact element manufacturing method. The steps include: (a) forming a conductive film (32) on a substrate (31) having no surface conductivity as shown in FIG. 2A (step (a) of the first preferred embodiment (b) as shown in the third B diagram, the third c diagram, and the third diagram: a mask having a probe pattern opening (35) is formed on the conductive '2 diaphragm (32) Layer ' (33) (same as step (b) of the first preferred embodiment). (c) As shown in the third E diagram: a support material is filled in the opening (35) of the shielding layer (33) ( 36) (same as step (c) of the first preferred embodiment). (d) As shown in the third F diagram: the masking layer (33) is removed (same as the step (e) of the first preferred embodiment 12 1261890). The inner sink (e) is as shown in the third G diagram: a conductive material (38) is formed on the support material (36). In the step (6), the supporting material (36) may be formed by depositing, depositing or coating, and the material of the supporting material (Μ) and the materials of the conductive materials (32), (31) and the conductive material (38) different. The support material 2 is made of plastic material or copper...etc.
(f) 如第三Η _示:將支撐材料(36)與導電材料 時以研磨方式將其表面平整化。 (g) 如弟三I圖所示:去除支撐材料(36)。 可利用蚀刻製程將支擇材料(36)去除，其钱刻製程可採 用電漿離子勤]或化學_方式，且⑽崎料及條件經 過選擇，只姓去支揮材料(36)對導電材料 及基板(31)並無任何影響。 #^( } 15 ⑻如第三】騎示:去料電薄即2)以取出由導電材 料(38)所形成之探針(與第一較佳實施例之_驟相同）。 ±亦可在步驟(g)中以化學·刻方式去除支撐材料(36) 時^配超音波震動促使由導電材料⑽所構成之探針與導 電薄，(32)剝離，而無需經過步驟⑻即可取出探針。 2〇 、是以，藉由本發明第三較佳實施例所提供之製程，可 使導電材料(38)在研磨整平其表面時，能藉由材質較硬之支 ，材料(36)將導電材料(38)_支撐，以避免習知製程在研 f其導電㈣時會有由材質較軟之絲層所切而發生研 磨均勻度不佳之情事。 13 1261890 請參閱第四A圖至四T P! 乂么丄 四[圖，係本發明所提供第四較佳 貝加例微_讀之製造綠，其步驟包含有 ⑻如第四A圖所示.於一矣思丁 θ、苦 β π Φ 一 it + @ 表層不具導電性之基板(41)上 成形出一導電薄膜(42)(盘第一於杜每 ^ '、弟車乂佳a知例之⑻步驟相同）。 (b)如弟四B圖、第 弟c圖及弟四ϋ圖所示:在該導電 溥膜（42)上成形出一且偌抠 ，、備抓針圖形開口（45)之遮蔽層 ()〇、弟一較佳實施例之(^步驟相同）。 、⑷如第四E圖所不:於遮蔽層(43)上緣及其開口(45)中 沈積一電鑄材料(47)，如鎳金屬或鎳合金。 (d)如第四f圖所示:將該電鎿材料⑼之表面研磨整 平0 (e)如第四G圖所示:去除遮蔽層(43)及蝕刻導電薄膜 (42)以取出由電每材料(47)所形成之電鑄模具。 "(f)如第四Η圖所示:利用電鑄模具(即電鑄材料(47》以 15熱壓方式在一高分子材料基板(48)上印出微接觸元件(探針) 圖形之開口(44)。 (g) 如第四I圖所示:在高分子材料基板(48)上沈積一導 電薄膜(46)。 (h) 如第四j圖所示:在該開口(44)中之導電薄膜(46)上 2〇 沈積一導電材料(49)。 ⑴如第四K圖所示:研磨整平該導電材料(49)之表面。 ϋ)如第四L圖所示:蝕刻導電薄膜(46)以取出由導電材 料(49)所形成之探針。 亦可在步驟⑴中以超音波震動促使探針與導電薄膜(46) 14 1261890 剝離。 是以 伞免明所提供之第四較佳實施例， 板上成形出-與微接觸科(探針)形狀相對岸之 二 探針形㈣ :=時:使在大量製造探針時，可減”侧 請參閱第五Α @至第五κ圖，係本發騎提供第五較 佳貝施例微接觸元件之製造方法’其步驟包含有 切=^_心—絲板(5㈣層上沈積— (b)如第五Β圖所示在該氮化$薄膜(52)上以微影蚀刻 方式製作出一具圖形化之遮蔽層(53)。 15 ⑹如第iC_示:以電漿反應式離子_方式去除特 • 定部位之氮化石夕薄膜(52)。即去除未受遮蔽層⑼所遮蔽之 部份氮化矽薄膜(52)。 (d) 如第五D圖所示:去阻遮蔽層（53)。 (e) 如第五E圖所示··以非等向性蝕刻製程蝕刻該矽基板 • 2〇 (51)，使受除去氮化矽薄膜(52)之矽基板(51)部位，形成出 一側具有斜面之第一凹槽(511)。 ⑴如第五F圖所示··去除氮化矽薄膜(52)。 (g)如第五G圖所示:以半導體微影蝕刻技術於該矽基 板(51)上形成出一具有探針圖形之遮蔽層（54)。 15 1261890 ⑻如第五Η _示:以電漿反應式離子㈣方 叉遮敝層（54)所遮罩之石夕基板(S1)部位，以形成出—不呈 2=Γ512)，且心凹槽(512)之深度大於欲製 使矽基板(51)成為 ⑴如第五1圖所示:去除遮蔽層（54)， 具有可壓製出探針圖形之模具。(f) As shown in the third _ _: the support material (36) and the conductive material are polished to flatten the surface. (g) As shown in Figure 3: Remove the support material (36). The etching process can be used to remove the selective material (36), the plasma etching process can adopt the plasma ion service or the chemical method, and (10) the raw materials and conditions are selected, and only the surname is used to support the material (36) to the conductive material and The substrate (31) has no effect. #^( } 15 (8) As the third] riding: the stripping electrode is 2) to take out the probe formed by the conductive material (38) (same as the first preferred embodiment). ± can also remove the support material (36) chemically and engraved in step (g). The ultrasonic vibration causes the probe composed of the conductive material (10) to be thin with the conductive material, and (32) is peeled off without going through the step (8). The probe can be removed. 2, by the process provided by the third preferred embodiment of the present invention, the conductive material (38) can be electrically conductive by the material of the material (36) when the surface of the conductive material (38) is ground and flattened. Material (38)_Support, in order to avoid the conventional process, when it is conductive (4), there will be a condition that the polishing uniformity is poor due to the softer layer of silk. 13 1261890 Please refer to the fourth A to fourth TP! 乂 丄 [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ A conductive film (42) is formed on the substrate (41) which is not conductive on the surface of the θ, 思 β π Φ it + @ @ @ ( 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 For example, the (8) steps are the same). (b) As shown in Fig. 4B, Fig. C, and Fig. 4: a shielding layer is formed on the conductive enamel film (42), and the shielding layer (45) is formed. 〇, brother, a preferred embodiment (^ steps are the same). (4) As shown in Fig. 4E, an electroforming material (47) such as nickel metal or nickel alloy is deposited in the upper edge of the shielding layer (43) and its opening (45). (d) as shown in the fourth f diagram: the surface of the electroconductive material (9) is grounded and leveled 0 (e) as shown in the fourth G diagram: the shielding layer (43) is removed and the conductive film (42) is etched to be taken out An electroforming mold formed by each material (47). "(f) As shown in the fourth diagram: micro-contact elements (probes) are printed on a polymer substrate (48) by electroforming (ie, electroforming material (47) by 15 hot pressing) Opening (44) (g) As shown in Fig. 4I, a conductive film (46) is deposited on the polymer material substrate (48). (h) As shown in the fourth j: at the opening (44) A conductive material (49) is deposited on the conductive film (46). (1) As shown in the fourth K: polishing and leveling the surface of the conductive material (49). ϋ) As shown in the fourth L: The conductive film (46) is etched to take out the probe formed by the conductive material (49). In the step (1), the probe can be peeled off from the conductive film (46) 14 1261890 by ultrasonic vibration. The fourth preferred embodiment is formed on the board - two probe shapes opposite to the shape of the microcontact (probe) (four): = hour: when the probe is manufactured in a large amount, the side can be reduced. Α @至五κ图, is the fifth preferred embodiment of the micro-contact element manufacturing method of the present invention. The steps include cutting = ^ _ heart - silk plate (5 (four) layer deposition - (b) as in The five Β diagram shows the thinning in the thin (52) A patterned shielding layer (53) is formed by photolithography etching. 15 (6) As shown in the iC_: removing the special portion of the nitride film by the plasma reactive ion method (52) That is, a portion of the tantalum nitride film (52) that is not shielded by the shielding layer (9) is removed. (d) As shown in FIG. 5D: the barrier layer (53) is removed. (e) as shown in FIG. The ruthenium substrate is etched by an anisotropic etching process to form a first groove having a slope on one side of the substrate (51) from which the tantalum nitride film (52) is removed. (511) (1) As shown in Fig. F, the tantalum nitride film (52) is removed. (g) As shown in Fig. 5G, a semiconductor lithography technique is used to form the germanium substrate (51). a shielding layer (54) having a probe pattern. 15 1261890 (8) as a fifth Η _ shows: a portion of the stone substrate (S1) covered by a plasma reactive ion (four) square fork concealing layer (54) Formed—not 2=Γ512), and the depth of the core groove (512) is greater than that required to make the substrate (51) become (1) as shown in FIG. 1 : removing the shielding layer (54), having a reversible The mold of the needle pattern.
⑴如第五J圖所示: 反轉以利進行下一步驟。 可將由該矽基板(51)所製成之模具 (k)如帛五κ ®所示:再騎如f四較佳實施例之第 10 (f)、（，）、（h)、（i)、⑴步驟，便可製出探針。 疋以’本發明所提供第五較佳實糊之微接觸元件之 製造方法’可利用侧石夕基板(S1)之方式直接作為熱壓之模 具，相較於第四實施例係以電鎊材料為熱壓模具，更具有 成本較低、加工精度較高之優點。 〃(1) As shown in the fifth J diagram: Reverse to facilitate the next step. The mold (k) made of the crucible substrate (51) can be as shown in Fig. 5: re-riding the 10th (f), (,), (h), (i) of the preferred embodiment. In step (1), the probe can be produced. The method for manufacturing the micro-contact element of the fifth preferred solid paste provided by the present invention can be directly used as a mold for hot pressing by means of the side stone substrate (S1), and the electric pound is compared with the fourth embodiment. The material is a hot pressing mold, which has the advantages of lower cost and higher processing precision. 〃
15請參閱第六八圖至第六K圖’係本發明所提供第六較 佳實施例微接觸元件之製造方法，其步驟包含有 ⑻如第六A圖所示:在一石夕基板⑹)上沈積一氮化石夕薄 (b)如第六B _示:在該氮切薄膜(62)上以微影侧 2〇方式製作出一具圖形化之遮蔽層⑽。其中該遮蔽層(63)且 有-探針圖形(631)及—侧深度測試圖形(632)。 ⑷如第六C圖所示:料向性侧之方式，將未受遮蔽 層(63)所遮罩之氮化石夕薄膜(62)部位侧去除。 (d)如第六D圖所示:去阻遮蔽層（63)。 16 ^261890 (e)如第六E圖所示.以 該石夕基板(61)形成出—4向性敍刻該石夕基板(61)，使 倒金字塔型之峨切_ _之針體凹槽(64)及-呈 少-斜面。其中，於^J ’且1針體凹槽(64)中包含有至 5試圖形(632)區域中之故 σ性蝕刻時，當原本位於測 塔型時(如第六Ε圖所亍部位已被敍刻至呈倒金字 可停止姑到，而此=’;=已轴到至預定之深度，即 (如第六E圖所示），且该圖^之針體凹槽(64)亦已形成 製出之探針厚度。X冑凹槽(64)之深度係略大於所欲 10並於:第六f圖所示:去除氮化㈣膜(62)， 卿2)後，於該輸陳沈積一導電 薄膜rim G騎半導雖雜财式於該導電 15 具有物形㈣67丨)之遮_7)，並 "_回^口之至少一端位於該針體凹槽(64)之斜面 上0 材料(：弟六H圖所示··於該開口(671)中沈積形成-導電 (1)如，六I圖所示··將該導電材料(68)之表面研磨整平。 (0如第六J圖所示··去除遮蔽層（67)。 (k)如第六Κ圖所示:蝕刻導電薄膜(66)以自該矽基板 (61)上取出由該導電材料(68)所製成之探針針體。 亦可在步驟⑴中以化學濕蝕刻方式去除光阻時，搭配 超音波震動促使探針與導電薄膜(32)剝離，而無需經過步驟 17 1261890 (k)即可取出探針。 是以，藉由上述所提供本發明第六較佳實施例微接觸 几件之製造方法，可使得導電材料(68)於受研磨整平時，受 到同樣位在針體凹槽(64)内之遮蔽層(67)所支撐，使該導電 5材料(68)於研磨時可受支撐而較為穩固，使之形成之探針精 度可較為增高。 明參閱第七A圖至第七f圖，係本發明所提供第七較 _ 佳實施例微接觸元件之製造方法，其步驟包含有 (a) 如第七A圖所示：進行與第六較佳實施例相同之 ίο⑻〜⑻步驟;此時已同樣在一石夕基板⑼上成形出一針體四 槽(74)及一測試凹槽(75)，並在該矽基板(71)上沈積一導電 薄膜(76)，而在該導電薄膜(76)上形成一具針體圖形開口 (771)之遮蔽層(77)，且在該開口中沈積一導電材料⑽。 (b) 如第七B圖所示:將遮蔽層（77)去除。 15 (C)如第七C圖所示:於該導電薄膜(76)上塗佈一支浐枒 • 料(79)，並將該導電材料(78)加以包覆。 牙 其中該支撐材料(79)可以電鍍、沈積或塗佈之方式形 於該導電薄膜(76)上，並加以將該導電材料(78)包覆。診 撐材料(79)之材料與導電薄膜⑽、石夕基板㈤及導電^ • 20 (78)之材料不同，該支撐材料(79)之材料可為塑膠材質或銅 . 等。 (d) 如第七D圖所示:研磨整平該導電材料(78)之表面。 (e) 如第七E圖所示:去除支撐材料(79)。 其中係利用蝕刻製程將支撐材料(79)去除，其蝕刻製程 18 Ϊ261890 °木用電漿離子_或化學㈣ 件經過選擇，只餘去支撐材 且、飿刻材料及條 薄膜(76)及矽基板(71)並無影響。冷电材料(78)、導電 (0如第七F圖所示:去除導 料(78)所製成之探針。 相(76)以取出由導電材 亦可在步驟(e)中以化學渴蝕 時，搭配超音波肋促贿針解㈣撐材即9) 經過步驟(f)即可取出探針。 、）“離，而無需 強度之支撐具有足夠 :材峨受研磨時之穩，更佳，= 口月茶閱八A圖至第八岡 # j 15 實施例微接觸元件之^方^本m提供第八較佳 (=)進彳T_L述各實闕之騎步驟，至僅嶋刻導 膜便能將導電材料(針體)取出之步驟。 彳 (b)如第八A騎示:將僅藉由導電薄卵2)連結於基板 ΐϋϋ導電材料(83) ’將裸露部份之導電材料(83)以^組 對向接S之方式進行共溫接合。 、⑷如第八β圖所示·將導電薄膜(82)侧去除，以 料(83)所製成之探針，且此探針已形成具有對稱針 之 5^1 〇 當然，進行步驟⑻後之基板、導電薄膜及導電 型恶會因應先前之製程而有所不同，如第人c圖及第八』 19 20 1261890 圖所示，但一樣皆可進行第(b)及(C)之步驟，使兩組之導電 材料接合’如第八D圖及第八f圖所示。 請參閱第九A圖至第九κ圖所示，係本發明所提供第 九較佳實施例微接觸元件之製造方法，其步驟包含有： • 5 (a)如第九A圖所示··於一基板(91)上塗佈一導電薄膜 (92) ，並於該導電薄膜(92)上形成一已完成電鑄、平整化及 ’ 去除側壁支撐材料之導電材料(93)。 • (b)如第九B圖所示:於該導電薄膜(92)及該導電材料 (93) 上沈積一介電材料(94)。 1〇 如第九c圖所示:去除位於頂層之介電材料(94)。 利用非等向性蝕刻將位於該導電薄膜(92)上方及該導 私材料(93)上方之介電材料(94)去除，使僅只有位於該導電 材料(93)兩側之介電材料(94)留下。 (d)如第九D圖所示··於該導電薄膜(92)上塗佈一遮蔽層 15⑽’利用微影钱刻方式於遮蔽層(95)内構成開〇，使得該 • 遮蔽層(95)並未與該導電材料(93)之兩側接觸，而距有一預 定之距離。 ^ 20 第九Ε圖所示··於該導電材料(93)上方及該介電層 ()^側以電矯或賤鑛製程方式形成-導電層(96)。 如^_九F圖所示:去除遮蔽層(95)。 (94)。第圖所不·姓刻導電材料㈣兩端之介電材料 材料山第九圖疋轉9〇度後之上視圖，且導電 由第九受到遮蔽層(95)所覆蓋，因此 出邊V電材料(93)之兩端已未受該介電材料 20 1261890 (94)及該導電層(96)之包覆而呈裸露狀態。 料(97)，以將該導電材料(93)、介帝鉍 ； 材 加以包覆。 可十（3) ^材枓(94)及該導電層(96) 5 (D如第九Η圖所示:研磨整平該導電 料(94)及該導電層(96)之頂層表面。 电何 ⑴如第九I圖所示··去除支撐材料(97)。 (k)如第九〗圖所示··去除導電薄膜(92)以取出由導電材 料⑽―、介電材料(94)及該導電層(96)所構成之探針。 1〇 藉此，本實施例所形成之探針，其在導電材料(93)外側 具有介電材料(94)之遮蔽效應，可增加傳輸之頻寬、減少訊 就輕合與電容效應。 另外’由於本實施例之製程主要在於將導電材料之兩 側藉由介電材料所包覆，以達成上述之目的，因此當前述 15之各實施例在其導電材料仍位在導電薄膜上方而未被取下 且其導電材料兩側亦尚未被電鑄模具所遮蔽前，皆可接續 進行本實施例之步驟。 2115 Please refer to the sixth to sixth K drawings. The method for manufacturing the micro contact element according to the sixth preferred embodiment of the present invention comprises the following steps: (8) as shown in FIG. 6A: a stone substrate (6) Depositing a nitridite thin (b) as shown in the sixth B_ shows that a patterned masking layer (10) is formed on the nitrogen cut film (62) by a lithographic side. The shielding layer (63) has a - probe pattern (631) and a side depth test pattern (632). (4) The side of the nitride film (62) which is not covered by the shielding layer (63) is removed as shown in Fig. C: on the feed side. (d) As shown in the sixth D diagram: the obstruction shielding layer (63). 16 ^261890 (e) as shown in Figure 6E. The Shishi substrate (61) is used to form a 4-sided characterization of the Shishi substrate (61), so that the inverted pyramid type is cut into __ The grooves (64) and - are less-beveled. Wherein, in the ^J 'and 1 needle groove (64), there is a sigma etching in the region of the 5th attempted (632) region, when the original is located in the tower type (such as the portion of the sixth map) Has been described to the inverted gold word can be stopped, and this = '; = axis has reached the predetermined depth, that is (as shown in Figure 6E), and the needle groove (64) The thickness of the prepared probe has also been formed. The depth of the X胄 groove (64) is slightly larger than the desired 10 and is shown in the sixth f: after removing the nitride (tetra) film (62), after 2), The deposition film of a conductive film rim G rides a semi-conductor, although the conductive type has a shape (4) 67丨), and at least one end of the "_back is located in the needle groove (64) ) Material on the slant of the slant (Fig. 6: H shown in the figure). Deposited in the opening (671) to form - Conductive (1). As shown in Figure VI, the surface of the conductive material (68) is ground. (0) As shown in the sixth J diagram, the shielding layer (67) is removed. (k) As shown in the sixth drawing: the conductive film (66) is etched to be taken out from the germanium substrate (61) by the conductive The probe needle made of the material (68) can also be removed by chemical wet etching in the step (1). In the case of photoresist, the probe is separated from the conductive film (32) by ultrasonic vibration, and the probe can be taken out without going through step 17 1261890 (k). Therefore, the sixth preferred embodiment of the present invention provided by the above is provided. The micro-contact piece is manufactured in such a manner that the conductive material (68) is supported by the shielding layer (67) which is also located in the needle groove (64) when being ground and leveled, so that the conductive material (68) It can be supported and stabilized during grinding, so that the precision of the probe formed can be increased. Referring to Figures 7A to 7f, the seventh comparative example of the micro-contact element is provided by the present invention. The method comprises the steps of: (a) as shown in FIG. 7A: performing the same steps as (8) to (8) of the sixth preferred embodiment; at this time, a needle-shaped four-groove is formed on the same substrate (9). 74) and a test recess (75), and depositing a conductive film (76) on the germanium substrate (71), and forming a shielding layer on the conductive film (76) with a needle pattern opening (771) (77), and depositing a conductive material (10) in the opening. (b) As shown in Fig. 7B, the shielding layer (77) is removed. 15 (C) As shown in FIG. CC, a conductive material (79) is coated on the conductive film (76), and the conductive material (78) is coated. The supporting material of the tooth ( 79) may be electroplated, deposited or coated on the conductive film (76), and coated with the conductive material (78). The material of the diagnostic material (79) and the conductive film (10), Shixi substrate (5) And the material of the conductive ^ 20 (78) is different, the material of the supporting material (79) can be plastic material or copper. (d) As shown in the seventh D: grinding and leveling the surface of the electrically conductive material (78). (e) As shown in Figure 7E: Remove the support material (79). The support material (79) is removed by an etching process, and the etching process of 18 Ϊ 261890 ° wood plasma ion _ or chemical (four) pieces is selected, leaving only the support material, engraving material and strip film (76) and 矽The substrate (71) has no effect. The cold-electric material (78), conductive (0 as shown in Figure 7F: removing the probe made of the guide material (78). The phase (76) is taken out by the conductive material and can also be chemically used in the step (e) When thirsty, use the ultrasonic rib to promote bribery (4) struts 9) After step (f), the probe can be taken out. ,) "Off, without the support of strength is sufficient: the material is stable when grinded, better, = mouth moon tea reading eight A map to the eighth Gang # j 15 embodiment of the micro-contact elements ^ square ^ this m The eighth preferred (=) step 彳T_L is described as a step of riding each of the actual steps, and the step of taking out the conductive material (needle body) can be performed only by engraving the film. 彳 (b) as shown in the eighth A: The conductive material (83) of the bare portion is joined by the conductive material (83) by the conductive thin film 2). The conductive material (83) of the bare portion is coherently bonded in the manner of the pair S. (4) Show the side of the conductive film (82), the probe made of the material (83), and the probe has formed a 5^1 with a symmetrical needle. Of course, the substrate, the conductive film and the conductive after the step (8) are performed. The type of evil will vary according to the previous process, as shown in the figure c and the eighth paragraph of 19 20 1261890, but the steps (b) and (c) can be carried out to make the two groups of conductive materials. The bonding is as shown in the eighth D and the eighth f. Referring to the ninth to ninth κ, the manufacturing method of the micro contact element according to the ninth preferred embodiment of the present invention is provided. The steps include: • 5 (a) as shown in FIG. 9A, a conductive film (92) is coated on a substrate (91), and a completed electroforming is formed on the conductive film (92). , planarizing and 'removing the conductive material of the sidewall support material (93). (b) as shown in ninth B: depositing a dielectric material on the conductive film (92) and the conductive material (93) 1. As shown in Figure IX, the dielectric material (94) at the top layer is removed. The dielectric above the conductive film (92) and above the conductive material (93) is removed by anisotropic etching. The material (94) is removed so that only the dielectric material (94) on both sides of the conductive material (93) is left behind. (d) As shown in the ninth D-d coating on the conductive film (92) A masking layer 15(10)' embosses in the shielding layer (95) by means of lithography such that the shielding layer (95) is not in contact with both sides of the conductive material (93) at a predetermined distance ^ 20 The ninth diagram shows the conductive layer (96) formed on the conductive material (93) and on the dielectric layer () side by electric or tantalum process. Shown: Remove the masking layer (95). (94) The first figure does not · the surname of the conductive material (four) the dielectric material at both ends of the mountain ninth figure 疋 turn 9 后 after the top view, and the conductive is covered by the ninth shielded layer (95), so the edge V The two ends of the material (93) are not exposed by the dielectric material 20 1261890 (94) and the conductive layer (96), and the material (97) is used to make the conductive material (93)材; material coated. Ten (3) ^ material 枓 (94) and the conductive layer (96) 5 (D as shown in Figure IX: grinding and leveling the conductive material (94) and the conductive layer ( 96) The top surface. Electric (1) As shown in Figure IX, the support material (97) is removed. (k) As shown in the ninth diagram, the conductive film (92) is removed to take out a probe composed of the conductive material (10), the dielectric material (94), and the conductive layer (96). Therefore, the probe formed in this embodiment has a shielding effect of the dielectric material (94) on the outer side of the conductive material (93), which can increase the bandwidth of the transmission and reduce the signal coupling and capacitance effects. In addition, since the process of the present embodiment mainly consists of coating the two sides of the conductive material with a dielectric material to achieve the above purpose, when the embodiments of the foregoing 15 are still above the conductive film, the conductive material is still located. The steps of this embodiment can be continued until it has not been removed and both sides of the conductive material have not been covered by the electroforming mold. twenty one